CN110093663A - A kind of automatic calibrating method and calibration system for crystal diameter measurement - Google Patents
A kind of automatic calibrating method and calibration system for crystal diameter measurement Download PDFInfo
- Publication number
- CN110093663A CN110093663A CN201810084837.7A CN201810084837A CN110093663A CN 110093663 A CN110093663 A CN 110093663A CN 201810084837 A CN201810084837 A CN 201810084837A CN 110093663 A CN110093663 A CN 110093663A
- Authority
- CN
- China
- Prior art keywords
- ccd camera
- crystal
- calibration
- diameter
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The present invention provide it is a kind of for crystal diameter measurement automatic calibrating method and calibration system, the calibration method include: offer long crystal furnace, be provided with above the long crystal furnace the first calibration CCD camera, second calibration CCD camera and measurement CCD camera；During long brilliant, the diameter of crystal is obtained by the measurement CCD camera；The crystal is captured about symmetrical two edges in the center of circle, to obtain the measured diameter of the crystal by the first calibration CCD camera and the second calibration CCD camera respectively；The measurement diameter is calibrated using the measured diameter.Provided by the present invention for the automatic calibrating method and calibration system of crystal diameter measurement, the method for manual calibration diameter is simulated, real-time online calibration is carried out to crystal diameter automatically and is effectively reduced cost to accurately control crystal diameter, increases long brilliant efficiency.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of automatic calibration side for crystal diameter measurement
Method and calibration system.
Background technique
With the development of science and technology, the newly emergence of electronic product, to the requirement rapid development of large-diameter monocrystalline silicon.Mesh
Preceding common monocrystalline silicon growing method is vertical pulling method, i.e., in single crystal growing furnace, is placed in seed crystal immersion in the silicon melt of crucible,
Seed crystal is lifted while rotation seed crystal and crucible, successively to carry out seeding, shouldering in seed crystal lower end, turn shoulder, isometrical and ending, is obtained
Obtain silicon single crystal rod.During using vertical pulling method preparation large scale silicon single crystal, in order to improve the utilization rate of material and guarantee crystalline substance
Body diameter reaches requirement, needs accurately to control the diameter of silicon rod in long brilliant process.
Current diameter of silicon single crystal control method mainly utilizes imaging sensor, such as three intersections in CCD camera acquisition furnace
Then image at boundary is handled image using calculating, obtain the diameter of crystal and feed back to control system to it is long brilliant into
Row control.In order to reach effectively accurate long brilliant control, the diameter accuracy that CCD camera obtains is most important.
As crystal growing technology continues to develop, the key technologies such as thermal field design and processes are continued to develop, so that CCD surveys diameter and needs
Meet the requirement of the survey diameter under different thermal fields and process conditions.Therefore, during actual (tube) length crystalline substance, it is constantly right to need
The diameter that CCD camera obtains is calibrated, and CCD diameter is calibrated by the crystal diameter of practical measurement, is reached accurate and is obtained directly
The requirement of diameter.There are mainly two types of currently used calibration methods, and one is utilize watch window by operator during long crystalline substance
The diameter of real-time measurement crystal, this precision of method is lower, and increases human cost；Another kind is reality after long crystalline substance
The diameter of measurement crystal is calibrated, this method can not real-time perfoming calibration, therefore will cause the waste of material.
Therefore, it is necessary to a kind of automatic calibrating method and calibration system for crystal diameter measurement be proposed, on solving
State problem.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of automatic calibrating method for crystal diameter measurement, described
Method includes:
Long crystal furnace is provided, be provided with above the long crystal furnace the first calibration CCD camera, the second calibration CCD camera and
Measure CCD camera；
During long brilliant, the diameter of crystal is obtained by the measurement CCD camera；
The crystal is captured about the center of circle pair by the first calibration CCD camera and the second calibration CCD camera respectively
Two edges claimed, to obtain the measured diameter of the crystal；
The measurement diameter is calibrated using the measured diameter.
Illustratively, the center spacing of the first calibration CCD camera and the second calibration CCD camera is equal to the crystalline substance
The setting diameter of body.
Illustratively, the method for obtaining the measured diameter of the crystal includes: with the first calibration CCD camera and described
Position corresponding to the center of second calibration CCD camera is as mark position；By the first calibration CCD camera and described second
Calibration CCD camera captures the crystal about symmetrical two edges in the center of circle respectively, and the distance for deviateing the mark position indicates
The variable quantity of the diameter of the crystal.
Illustratively, it is original to be set to the long crystal furnace for the first calibration CCD camera and the second calibration CCD camera
For carrying out at the observation panel of manual measurement.
Illustratively, it is described measurement CCD camera optical axis and the crystal central axes between at be greater than 0 degree less than 90 degree
Angle.
The present invention also provides a kind of automated calibration system for crystal diameter measurement, the calibration system includes:
Long crystal furnace；
The measurement CCD camera being set to above the long crystal furnace, the measurement CCD camera are used to obtain during long brilliant
The measurement diameter of crystal；
The the first calibration CCD camera and the second calibration CCD camera being set to above the long crystal furnace, first calibration
CCD camera and the second calibration CCD camera for capturing crystal about symmetrical two edges in the center of circle, described in obtaining respectively
The measured diameter of crystal；
Processor, for being calibrated using the measured diameter to the measurement diameter.
Illustratively, the center spacing of the first calibration CCD camera and the second calibration CCD camera is equal to the crystalline substance
The setting diameter of body.
Illustratively, it is original to be set to the long crystal furnace for the first calibration CCD camera and the second calibration CCD camera
For carrying out at the observation panel of manual measurement.
Illustratively, it is described measurement CCD camera optical axis and the crystal central axes between at be greater than 0 degree less than 90 degree
Angle.
Provided by the present invention for the automatic calibrating method and calibration system of crystal diameter measurement, it is straight to simulate manual calibration
The method of diameter carries out real-time online calibration to crystal diameter automatically and effectively reduces cost to accurately control crystal diameter, increases
Lengthen brilliant efficiency.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the schematic diagram of existing long crystal furnace.
Fig. 2 shows the signals for the automatic calibrating method that crystal diameter measurement is used for provided by one embodiment of the invention
Figure.
Fig. 3 shows the signal provided by one embodiment of the invention for the automated calibration system of crystal diameter measurement
Figure.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
It describes to send out herein with reference to the cross-sectional view of the schematic diagram as desirable embodiment (and intermediate structure) of the invention
Bright embodiment.As a result, it is contemplated that from the variation of shown shape as caused by such as manufacturing technology and/or tolerance.Therefore,
The embodiment of the present invention should not necessarily be limited to the specific shape in area shown here, but including due to for example manufacturing caused shape
Shape deviation.For example, being shown as the injection region of rectangle usually has round or bending features and/or implantation concentration ladder at its edge
Degree, rather than binary from injection region to non-injection regions changes.Equally, which can lead to by the disposal area that injection is formed
Some injections in area between the surface passed through when injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the invention.
In order to thoroughly understand the present invention, detailed structure will be proposed in following description, to illustrate proposition of the present invention
Technical solution.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can be with
With other embodiments.
During using vertical pulling method preparation large scale silicon single crystal, in order to improve the utilization rate of material and guarantee that crystal is straight
Diameter reaches requirement, needs accurately to control diameter in long brilliant process.
As shown in Figure 1, current diameter of silicon single crystal control method mainly utilizes CCD camera 101 to acquire in long crystal furnace 100
The image of the three-phase intersection of crystal 102 and silicon melt 103, then handles image using calculating, obtains crystal 102
Diameter simultaneously feeds back to control system and controls long crystalline substance.In order to reach effectively accurate long brilliant control, CCD camera 101 is obtained
Diameter accuracy it is most important.During actual (tube) length crystalline substance, the diameter constantly obtained to CCD camera 101 is needed to calibrate,
The diameter that the acquisition of CCD camera 101 is calibrated by the diameter of the crystal 102 of practical measurement reaches the accurate requirement for obtaining diameter.
There are mainly two types of currently employed calibration methods, the first is that long crystalline substance surveys diameter using watch window in the process in real time
Method calibrated, specifically, operator by watch window using telescope capture crystal left and right edges three-phase point
It sets, the mobile distance of telescope is exactly the diameter of crystal.However, the point due to capture can be different because tester is different,
Therefore this method can be different and different with operator, and error is larger.Meanwhile in large-scale production process, using the party
Method can occupy biggish labour, increase human cost.
Another calibration method is that the diameter of actual measurement crystal after length is brilliant is calibrated.Specifically, in long brilliant knot
Shu Hou, operator measure diameter using vernier caliper from the beginning to the end, and test gained diameter actual value and CCD camera are measured
Diameter value compares, and then calibrates to the diameter value that CCD camera measures.However, since this method carries out after long brilliant
Calibration, if diameter is bigger than normal or a large amount of wastes less than normal that will lead to material.
In view of the above-mentioned problems, the present invention provides a kind of automatic calibrating method for crystal diameter measurement, the method packet
It includes: long crystal furnace is provided, the first calibration CCD camera, the second calibration CCD camera and measurement are provided with above the long crystal furnace
CCD camera；During long brilliant, the diameter of crystal is obtained by the measurement CCD camera；By the first calibration CCD camera
The crystal is captured respectively about symmetrical two edges in the center of circle, to obtain the crystal with the second calibration CCD camera
Measured diameter；The measurement diameter is calibrated using the measured diameter.
The center spacing of the first calibration CCD camera and the second calibration CCD camera is equal to the setting of the crystal
Diameter.
The method for obtaining the measured diameter of the crystal includes: with the first calibration CCD camera and second calibration
Position corresponding to the center of CCD camera is as mark position；By the first calibration CCD camera and the second calibration CCD
Camera captures the crystal about symmetrical two edges in the center of circle respectively, and the distance for deviateing the mark position indicates the crystal
Diameter variable quantity.
It is described first calibration CCD camera and it is described second calibration CCD camera be set to the long crystal furnace it is original for into
At the observation panel of row manual measurement.
At greater than 0 degree of angle less than 90 degree between the optical axis of the measurement CCD camera and the central axes of the crystal.
The present invention also provides a kind of automated calibration system for crystal diameter measurement, the calibration system includes: long brilliant
Furnace；The measurement CCD camera being set to above the long crystal furnace, the measurement CCD camera are used to obtain crystal during long brilliant
Measurement diameter；The the first calibration CCD camera and the second calibration CCD camera being set to above the long crystal furnace, first school
Quasi- CCD camera and the second calibration CCD camera for capturing crystal about symmetrical two edges in the center of circle, to obtain respectively
State the measured diameter of crystal；Processor, for being calibrated using the measured diameter to the measurement diameter.
The center spacing of the first calibration CCD camera and the second calibration CCD camera is equal to the setting of the crystal
Diameter.
It is described first calibration CCD camera and it is described second calibration CCD camera be set to the long crystal furnace it is original for into
At the observation panel of row manual measurement.
At greater than 0 degree of angle less than 90 degree between the optical axis of the measurement CCD camera and the central axes of the crystal.
Provided by the present invention for the automatic calibrating method and calibration system of crystal diameter measurement, it is straight to simulate manual calibration
The method of diameter carries out real-time online calibration to crystal diameter automatically and effectively reduces cost to accurately control crystal diameter, increases
Lengthen brilliant efficiency.
In order to thoroughly understand the present invention, detailed structure and/or step will be proposed in following description, to illustrate this
Invent the technical solution proposed.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this hair
It is bright to have other embodiments.[exemplary embodiment one]
Below with reference to Fig. 2 and Fig. 3, to the automatic calibration side for crystal diameter measurement of an embodiment of the present invention
Method is described in detail.
Firstly, execute step 201, long crystal furnace is provided, be provided with above the long crystal furnace the first calibration CCD camera 310,
Second calibration CCD camera 311 and measurement CCD camera 312.
Wherein, the long crystal furnace is used to use vertical pulling method (Czochralski method) growing silicon single crystal, specifically includes
Furnace body 301 is equipped with heating device and pulling apparatus in furnace body 301.Heating device include silica crucible 302, graphite crucible 303,
Heater 304.Wherein, silica crucible 302 is for holding silicon material, such as polysilicon.Silicon material is heated to be silicon melt wherein
305.Graphite crucible 303 is wrapped in the outside of silica crucible 302, for providing support to silica crucible 302 during heating,
The outside of graphite crucible 303 is arranged in heater 304.Heat shielding 306 is provided with above silica crucible 302, the heat shielding 306 has
The back taper screen shape object of downwardly extending 307 growth district of circular silicon single crystal can block the 305 pairs of lifes of heater 304 and high temperature silicon melt
The direct heat radiation of long crystal 307 reduces the temperature of crystal 307.Meanwhile heat shielding can also make under the argon gas that blows concentrate it is direct
It is sprayed near growth interface, further enhances the heat dissipation of crystal 307.Thermal insulation material, such as carbon are additionally provided on 301 side wall of furnace body
Felt.
Pulling apparatus includes the seed shaft 308 being vertically arranged and crucible axis 309, and seed shaft 308 is arranged in silica crucible 302
Top, the bottom of graphite crucible 303 is arranged in crucible axis 309, and the bottom of seed shaft 308 is equipped with seed crystal by fixture,
Top connects seed crystal axial brake device, can Xiang Shang while rotating and slowly lift.The bottom of crucible axis 309 is equipped with earthenware
Crucible axial brake device makes crucible axis 309 be able to drive crucible and is rotated.
The first calibration CCD camera 310, second calibration CCD camera 311 and measurement are provided with above the long crystal furnace
CCD camera 312.
Specifically, it is described first calibration CCD camera 310 and second calibration CCD camera 311 be set to crystal 307 just on
Side, more specifically, the first calibration CCD camera 310 and the second calibration CCD camera 311 are projected in one of crystal 307 respectively
Two endpoints of diameter, the spacing between the two are equal to the setting diameter of crystal 307.As an example, the first calibration CCD
It is original for carrying out the observation panel of manual measurement that camera 310 and the second calibration CCD camera 311 are set to the long crystal furnace
Place, there is no need to the structures to long crystal furnace to be modified.And it measures between the optical axis of CCD camera 312 and the central axes of crystal 307
It forms an angle, the angle is greater than 0 degree and less than 90 degree, with bright to what is generated at solid liquid interface in quasi- monocrystalline production process
Ring, as an example, the size of the angle is 20 degree.
Step 202 is executed, during long brilliant, the measurement diameter of crystal 307 is obtained by the measurement CCD camera 312.
When carrying out crystal growth, silicon material is launched in silica crucible 302 first, then heater passes through graphite crucible
303 melt silicon material for silicon melt 305.Seed crystal is impregnated in the liquid level of silicon melt by seed shaft 308, slowly lifts seed crystal,
Thus it is bred as crystal 307.
During crystal growth, generated at the solid liquid interface of crystal 307 and silicon melt 305 due to the release of latent heat
Bright ring.Measurement CCD camera 312 obtains the picture signal of the bright ring, and signal is sent to computer after analog-to-digital conversion
System is handled crystal growth image by the image processing program in computer system, straight with the measurement for obtaining crystal 307
Diameter.
Illustratively, the method for the measurement diameter of the image signal acquisition crystal 307 obtained according to measurement CCD camera 312
It include: that image processing program extracts the bright ring at solid liquid interface to obtain crystal profile；Crystal profile is fitted, is obtained ellipse
Round edge circle, the method for the fitting are, for example, least square method；Oval boundary is corrected into circular boundary；Take up an official post in circular boundary
Three pixels are taken, its coordinate value is substituted into circle coordinates formula respectively, constitutive equation and is solved, the center of circle can be calculated
The diameter of coordinate and crystal.
Step 203 is executed, is captured respectively by the first calibration CCD camera 310 and the second calibration CCD camera 311
Crystal 307 is about symmetrical two edges in the center of circle, to obtain the measured diameter of the crystal 307.
In the present embodiment, the center spacing of the first calibration CCD camera 310 and the second calibration CCD camera 311
Equal to the setting diameter of the crystal 307, the two is projected on two endpoints of a diameter of crystal 307 respectively.It is surveyed with artificial
The method for measuring diameter is similar, obtains crystal using the first calibration CCD camera 310 and the second calibration CCD camera 311
The method of 307 measured diameters includes: with the center of the first calibration CCD camera 310 and the second calibration CCD camera 311
Corresponding position is as mark position, i.e. setting diameter of the distance between two mark positions equal to crystal 307；By described
First calibration CCD camera 310 and the second calibration CCD camera 311 capture the crystal 307 about the center of circle symmetrical two respectively
A edge, deviate the mark position distance indicate the crystal 307 diameter variable quantity, thus can obtain crystal
307 measured diameter.
It is so-called in the present embodiment to be referred to " about symmetrical two edges in the center of circle ": where two edges of crystal 307
Position is distributed in the two sides in the center of circle, and the direction for being directed toward described two edges by the center of circle is symmetrical relative to the center of circle, does not represent two
Edge itself is symmetrical relative to the center of circle, and when 307 section of crystal is stablized for the central axes of circular and crystal, two edges are opposite
It is symmetrical in the center of circle, when 307 section of crystal is the central axes generation offset of non-positive round or crystal, the first calibration CCD camera 310
The distance for deviateing the mark position is not necessarily equal to the from deviating from the position of the second calibration CCD camera 311, at this point, two edges
Relative to center of circle asymmetry.
Step 204 is executed, the measurement diameter is calibrated using the measured diameter.
Specifically, the first calibration CCD camera 310, the second calibration CCD camera 311 and the measurement CCD camera
312 output end is connected with processor.Processor passes through by the first calibration CCD camera 310 and the second calibration CCD phase
The measured diameter obtained of machine 311 carries out real-time online calibration to by the measurement CCD camera 312 measurement diameter obtained.
Finally, measuring system carries out the high-precision automation control of long crystalline substance using calibrated diameter.Above-mentioned calibration method simulates people
The method that work calibrates diameter, automatically calibrates crystal diameter, avoids the issuable error of manual calibration, additionally it is possible to drop
Low long brilliant required human resources investment；And can real-time online calibrated, to accurately control crystal diameter, increase length
Brilliant efficiency, effectively reduces cost, and improves the performance of enterprises.
Provided by the present invention for the automatic calibrating method of crystal diameter measurement, the method for manual calibration diameter is simulated,
Automatically real-time online calibration is carried out to crystal diameter to effectively reduce cost to accurately control crystal diameter, increase long brilliant effect
Rate.
[exemplary embodiment two]
Below with reference to Fig. 3, the automated calibration system for crystal diameter measurement of an embodiment of the present invention is done in detail
Thin description.The calibration system is for realizing above-mentioned calibration method.
As shown in figure 3, the calibration system includes: long crystal furnace；The measurement CCD camera being set to above the long crystal furnace
312, the measurement CCD camera 312 is used to obtain the measurement diameter of crystal 307 during long brilliant；It is set to the long crystal furnace
First calibration CCD camera 310 of top and the second calibration CCD camera 311, the first calibration CCD camera 310 and described second
CCD camera 311 is calibrated for capturing crystal 307 respectively about symmetrical two edges in the center of circle, to obtain the reality of the crystal 307
Survey diameter；And processor (not shown), for being calibrated using the measured diameter to the measurement diameter.
Wherein, the long crystal furnace is used to use vertical pulling method (Czochralski method) growing silicon single crystal, specifically includes
Furnace body 301 is equipped with heating device and pulling apparatus in furnace body 301.Heating device include silica crucible 302, graphite crucible 303,
Heater 304.Wherein, silica crucible 302 is for holding silicon material, such as polysilicon.Silicon material is heated to be silicon melt wherein
305.It is wrapped in the outside of silica crucible 302 in graphite crucible 303, for providing branch to silica crucible 302 during heating
The outside of graphite crucible 303 is arranged in support, heater 304.Heat shielding 306, the heat shielding 306 are provided with above silica crucible 302
Back taper screen shape object with downwardly extending circular 307 growth district of silicon single crystal, can block heater 304 and high temperature silicon melt 305
Direct heat radiation to the crystal 307 of growth reduces the temperature of crystal 307.Meanwhile heat shielding can also make under the argon gas that blows concentrate
It is directly sprayed near growth interface, further enhances the heat dissipation of crystal 307.It is additionally provided with thermal insulation material on 301 side wall of furnace body, such as
Carbon felt.
Pulling apparatus includes the seed shaft 308 being vertically arranged and crucible axis 309, and seed shaft 308 is arranged in silica crucible 302
Top, the bottom of graphite crucible 303 is arranged in crucible axis 309, and the bottom of seed shaft 308 is equipped with seed crystal by fixture,
Top connects seed crystal axial brake device, can Xiang Shang while rotating and slowly lift.The bottom of crucible axis 309 is equipped with earthenware
Crucible axial brake device makes crucible axis 309 be able to drive crucible and is rotated.
The first calibration CCD camera 310, second calibration CCD camera 311 and measurement are provided with above the long crystal furnace
CCD camera 312.Wherein, the measurement CCD camera 312 is used to obtain the measurement diameter of crystal 307 during long brilliant；It is described
First calibration CCD camera 310 and the second calibration CCD camera 311 for capturing crystal 307 about the center of circle symmetrical two respectively
A edge, to obtain the measured diameter of the crystal 307.
Specifically, it is described first calibration CCD camera 310 and second calibration CCD camera 311 be set to crystal 307 just on
Side, more specifically, the first calibration CCD camera 310 and the second calibration CCD camera 311 are projected in one of crystal 307 respectively
Two endpoints of diameter, the spacing between the two are equal to the setting diameter of crystal 307.As an example, the first calibration CCD
It is original for carrying out the observation panel of manual measurement that camera 310 and the second calibration CCD camera 311 are set to the long crystal furnace
Place, there is no need to the structures to long crystal furnace to be modified.And it measures between the optical axis of CCD camera 312 and the central axes of crystal 307
It forms an angle, the angle is greater than 0 degree and less than 90 degree, with bright to what is generated at solid liquid interface in quasi- monocrystalline production process
Ring, as an example, the size of the angle is 20 degree.
Provided by the present invention for the automated calibration system of crystal diameter measurement, above-mentioned calibration method can be realized, because
And real-time online calibration can be carried out to crystal diameter and be effectively reduced cost to accurately control crystal diameter, increase long crystalline substance
Efficiency.
The CCD camera sensor that imaging sensor in the present invention uses can also illustratively use other kinds of
Imaging sensor such as cmos sensor, is replaced the CCD camera.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (9)
1. a kind of automatic calibrating method for crystal diameter measurement, which is characterized in that the described method includes:
Long crystal furnace is provided, the first calibration CCD camera, the second calibration CCD camera and measurement are provided with above the long crystal furnace
CCD camera；
During long brilliant, the diameter of crystal is obtained by the measurement CCD camera；
It is symmetrical about the center of circle that the crystal is captured by the first calibration CCD camera and the second calibration CCD camera respectively
Two edges, to obtain the measured diameter of the crystal；
The measurement diameter is calibrated using the measured diameter.
2. CCD camera according to claim 1 surveys diameter automatic calibrating method, which is characterized in that the first calibration CCD
The center spacing of camera and the second calibration CCD camera is equal to the setting diameter of the crystal.
3. CCD camera according to claim 2 surveys diameter automatic calibrating method, which is characterized in that obtain the crystal
The method of measured diameter includes: with position corresponding to the center of the first calibration CCD camera and the second calibration CCD camera
It sets as mark position；By it is described first calibration CCD camera and it is described second calibration CCD camera capture respectively the crystal about
Symmetrical two edges in the center of circle, deviate the mark position distance indicate the crystal diameter variable quantity.
4. CCD camera according to claim 1 surveys diameter automatic calibrating method, which is characterized in that the first calibration CCD
Camera and the second calibration CCD camera are set at the original observation panel for carrying out manual measurement of the long crystal furnace.
5. CCD camera according to claim 1 surveys diameter automatic calibrating method, which is characterized in that the measurement CCD camera
Optical axis and the crystal central axes between at be greater than 0 degree of angle less than 90 degree.
6. a kind of automated calibration system for crystal diameter measurement, which is characterized in that the calibration system includes:
Long crystal furnace；
The measurement CCD camera being set to above the long crystal furnace, the measurement CCD camera are used to obtain crystal during long brilliant
Measurement diameter；
The the first calibration CCD camera and the second calibration CCD camera being set to above the long crystal furnace, the first calibration CCD phase
Machine and the second calibration CCD camera for capturing crystal about symmetrical two edges in the center of circle, to obtain the crystal respectively
Measured diameter；
Processor, for being calibrated using the measured diameter to the measurement diameter.
7. calibration system according to claim 6, which is characterized in that the first calibration CCD camera and second school
The center spacing of quasi- CCD camera is equal to the setting diameter of the crystal.
8. calibration system according to claim 6, which is characterized in that the first calibration CCD camera and second school
Quasi- CCD camera is set at the original observation panel for carrying out manual measurement of the long crystal furnace.
9. calibration system according to claim 6, which is characterized in that the optical axis and the crystal of the measurement CCD camera
Central axes between at be greater than 0 degree of angle less than 90 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810084837.7A CN110093663A (en) | 2018-01-29 | 2018-01-29 | A kind of automatic calibrating method and calibration system for crystal diameter measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810084837.7A CN110093663A (en) | 2018-01-29 | 2018-01-29 | A kind of automatic calibrating method and calibration system for crystal diameter measurement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110093663A true CN110093663A (en) | 2019-08-06 |
Family
ID=67442186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810084837.7A Pending CN110093663A (en) | 2018-01-29 | 2018-01-29 | A kind of automatic calibrating method and calibration system for crystal diameter measurement |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110093663A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111593403A (en) * | 2020-05-07 | 2020-08-28 | 宁夏银和新能源科技有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| CN113355741A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Czochralski single crystal seeding process and single crystal furnace for seeding process |
| TWI812511B (en) * | 2022-06-28 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Single crystal diameter control method and device, single crystal silicon crystal pulling furnace |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147570A (en) * | 1995-06-02 | 1997-04-16 | Memc电子材料有限公司 | System and method for controlling growth of silicon crystal |
| US5961716A (en) * | 1997-12-15 | 1999-10-05 | Seh America, Inc. | Diameter and melt measurement method used in automatically controlled crystal growth |
| US6030451A (en) * | 1998-01-12 | 2000-02-29 | Seh America, Inc. | Two camera diameter control system with diameter tracking for silicon ingot growth |
| CN101782414A (en) * | 2010-01-28 | 2010-07-21 | 杭州慧翔电液技术开发有限公司 | Measuring method of liquid level position of silicon melt and diameter of monocrystal rod of Czochralski silicon monocrystal furnace |
-
2018
- 2018-01-29 CN CN201810084837.7A patent/CN110093663A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147570A (en) * | 1995-06-02 | 1997-04-16 | Memc电子材料有限公司 | System and method for controlling growth of silicon crystal |
| US5961716A (en) * | 1997-12-15 | 1999-10-05 | Seh America, Inc. | Diameter and melt measurement method used in automatically controlled crystal growth |
| US6030451A (en) * | 1998-01-12 | 2000-02-29 | Seh America, Inc. | Two camera diameter control system with diameter tracking for silicon ingot growth |
| CN101782414A (en) * | 2010-01-28 | 2010-07-21 | 杭州慧翔电液技术开发有限公司 | Measuring method of liquid level position of silicon melt and diameter of monocrystal rod of Czochralski silicon monocrystal furnace |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355741A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Czochralski single crystal seeding process and single crystal furnace for seeding process |
| CN111593403A (en) * | 2020-05-07 | 2020-08-28 | 宁夏银和新能源科技有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| CN111593403B (en) * | 2020-05-07 | 2021-04-27 | 宁夏富乐德石英材料有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| TWI812511B (en) * | 2022-06-28 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Single crystal diameter control method and device, single crystal silicon crystal pulling furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110093663A (en) | A kind of automatic calibrating method and calibration system for crystal diameter measurement | |
| CN107144273B (en) | Indoor measurement positioning system base station posture automatic compensating method based on inclination angle sensing | |
| CN109632103A (en) | High vacant building Temperature Distribution and surface crack remote supervision system and monitoring method | |
| CN106920261B (en) | A kind of Robot Hand-eye static demarcating method | |
| CN106017319B (en) | A kind of laser scanning data coordinate crossover tool and method based on high-precision Point Measurement | |
| CN107256568A (en) | A kind of high-accuracy mechanical arm trick camera calibration method and calibration system | |
| WO2022126339A1 (en) | Method for monitoring deformation of civil structure, and related device | |
| CN110528070A (en) | Pulling of crystals diameter measuring method | |
| CN104359436A (en) | Articulated-arm three-coordinate measuring machine, multi-measuring model system and workpiece measuring method | |
| CN114108717A (en) | Foundation pit enclosure top deformation monitoring system and method based on vision measurement | |
| CN106643582B (en) | A kind of large size net-shape antenna reflector type face high precision measurement method | |
| CN107063640A (en) | A kind of backrest-type twin-lens light axis consistency measurement jig and its method of testing | |
| CN106709912A (en) | Automatic testing system and testing method for preset position precision | |
| CN107631803A (en) | Surface temperature of concrete accurate measurement method based on thermal sensation imaging | |
| CN107340064A (en) | Thermal imaging system heterogeneity evaluation means for correcting based on scan rectangle black matrix | |
| CN108225563B (en) | Field environment sky polarization modeling alignment measuring device | |
| CN105806221A (en) | Laser projection calibration device and method | |
| CN106066336A (en) | A kind of reinforced concrete structure x-ray imaging detecting instrument | |
| CN204988223U (en) | Detection apparatus for steel member preparation size precision | |
| CN104344766B (en) | HWIL simulation IR point source/imaging complex target calibrating installation and calibration steps | |
| CN110686779A (en) | Automatic measuring method and device for temperature field in non-contact biological fermentation process | |
| CN111784820A (en) | Automated device and method for measuring crack changes through three-dimensional space reconstruction | |
| CN107478166A (en) | A kind of deformation monitoring hole effective aperture measurement apparatus and its operating method | |
| CN104713543A (en) | Method for preciously measuring dynamic lock region of laser gyroscope | |
| CN112161579B (en) | Anchor hole inner diameter measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190806 |