TWI810526B - 成膜裝置及成膜裝置的水分去除方法 - Google Patents
成膜裝置及成膜裝置的水分去除方法 Download PDFInfo
- Publication number
- TWI810526B TWI810526B TW110104944A TW110104944A TWI810526B TW I810526 B TWI810526 B TW I810526B TW 110104944 A TW110104944 A TW 110104944A TW 110104944 A TW110104944 A TW 110104944A TW I810526 B TWI810526 B TW I810526B
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- Taiwan
- Prior art keywords
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- film
- plasma
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- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 104
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000012545 processing Methods 0.000 claims abstract description 193
- 230000008569 process Effects 0.000 claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims abstract description 76
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 70
- 238000004544 sputter deposition Methods 0.000 claims abstract description 39
- 238000012546 transfer Methods 0.000 claims description 57
- 238000001816 cooling Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 29
- 238000004868 gas analysis Methods 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 239000003507 refrigerant Substances 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 153
- 239000007789 gas Substances 0.000 description 128
- 238000011282 treatment Methods 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000002265 prevention Effects 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000000181 anti-adherent effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000013626 chemical specie Substances 0.000 description 4
- 238000007791 dehumidification Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Control And Other Processes For Unpacking Of Materials (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020023678 | 2020-02-14 | ||
| JP2020-023678 | 2020-02-14 | ||
| JP2021003771A JP7451436B2 (ja) | 2020-02-14 | 2021-01-13 | 成膜装置及び成膜装置の水分除去方法 |
| JP2021-003771 | 2021-01-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202130844A TW202130844A (zh) | 2021-08-16 |
| TWI810526B true TWI810526B (zh) | 2023-08-01 |
Family
ID=77488051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110104944A TWI810526B (zh) | 2020-02-14 | 2021-02-09 | 成膜裝置及成膜裝置的水分去除方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7451436B2 (ja) |
| KR (1) | KR102520358B1 (ja) |
| TW (1) | TWI810526B (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7357182B1 (ja) * | 2021-12-22 | 2023-10-05 | 東京エレクトロン株式会社 | 基板処理装置のメンテナンス方法及び基板処理装置 |
| TWI800289B (zh) * | 2022-03-04 | 2023-04-21 | 國立中央大學 | 傳輸裝置及應用其的真空系統 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200922852A (en) * | 2007-05-18 | 2009-06-01 | Brooks Automation Inc | Load lock fast pump vent |
| US20100112814A1 (en) * | 2006-09-06 | 2010-05-06 | Sowmya Krishnan | Pre-certified process chamber and method |
| TW201100582A (en) * | 2009-03-04 | 2011-01-01 | Praxair Technology Inc | Atomic layer deposition processes |
| TW201537638A (zh) * | 2014-03-19 | 2015-10-01 | Asm Ip Holding Bv | 積體電路的製造方法 |
| TW201638368A (zh) * | 2015-03-13 | 2016-11-01 | 核心整合科技股份有限公司 | 具有複數旋轉盤支架之連續式濺鍍系統及使用其之屏蔽封裝方法 |
| TW201810424A (zh) * | 2016-03-29 | 2018-03-16 | 東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| CN112309925A (zh) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | 载盘的处理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6173879A (ja) * | 1984-09-17 | 1986-04-16 | Mitsubishi Heavy Ind Ltd | 真空蒸着メツキ方法 |
| US6562141B2 (en) | 2000-07-03 | 2003-05-13 | Andrew Peter Clarke | Dual degas/cool loadlock cluster tool |
| US6929720B2 (en) | 2003-06-09 | 2005-08-16 | Tokyo Electron Limited | Sputtering source for ionized physical vapor deposition of metals |
| JP4379212B2 (ja) | 2004-06-09 | 2009-12-09 | 株式会社島津製作所 | 液晶注入装置 |
| US8272825B2 (en) * | 2007-05-18 | 2012-09-25 | Brooks Automation, Inc. | Load lock fast pump vent |
| JP4915957B2 (ja) | 2008-03-19 | 2012-04-11 | 独立行政法人産業技術総合研究所 | 真空装置における水分除去方法及び装置 |
| JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
| JP2010225847A (ja) | 2009-03-24 | 2010-10-07 | Tokyo Electron Ltd | 真空処理装置，減圧処理方法，基板処理方法 |
| JP6555078B2 (ja) | 2015-10-29 | 2019-08-07 | 株式会社島津製作所 | 成膜方法 |
| JP7144219B2 (ja) | 2018-03-22 | 2022-09-29 | 芝浦メカトロニクス株式会社 | 真空処理装置及びトレイ |
-
2021
- 2021-01-13 JP JP2021003771A patent/JP7451436B2/ja active Active
- 2021-02-09 KR KR1020210018186A patent/KR102520358B1/ko active IP Right Grant
- 2021-02-09 TW TW110104944A patent/TWI810526B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100112814A1 (en) * | 2006-09-06 | 2010-05-06 | Sowmya Krishnan | Pre-certified process chamber and method |
| TW200922852A (en) * | 2007-05-18 | 2009-06-01 | Brooks Automation Inc | Load lock fast pump vent |
| TW201100582A (en) * | 2009-03-04 | 2011-01-01 | Praxair Technology Inc | Atomic layer deposition processes |
| TW201537638A (zh) * | 2014-03-19 | 2015-10-01 | Asm Ip Holding Bv | 積體電路的製造方法 |
| TW201638368A (zh) * | 2015-03-13 | 2016-11-01 | 核心整合科技股份有限公司 | 具有複數旋轉盤支架之連續式濺鍍系統及使用其之屏蔽封裝方法 |
| TW201810424A (zh) * | 2016-03-29 | 2018-03-16 | 東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| CN112309925A (zh) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | 载盘的处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202130844A (zh) | 2021-08-16 |
| JP7451436B2 (ja) | 2024-03-18 |
| KR102520358B1 (ko) | 2023-04-10 |
| KR20210103963A (ko) | 2021-08-24 |
| JP2021127516A (ja) | 2021-09-02 |
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