TWI809233B - RF electrode assembly for plasma treatment equipment and plasma treatment equipment - Google Patents

Abstract

A radio frequency electrode assembly for plasma processing equipment and a plasma processing device, wherein the radio frequency electrode assembly for plasma processing equipment includes: a base, a first fluid channel is arranged in the base, and the first fluid channel is connected to the second A fluid source; an electrostatic chuck located on the base; a focus ring located on the periphery of the electrostatic chuck; a heat conduction ring located around the base, the heat conduction ring at least partially surrounds the base, the heat conduction ring is located below the focus ring, and the heat conduction ring is provided with The second fluid channel is connected to the second fluid source, and heat conduction can be performed between the heat conduction ring and the focus ring. Plasma processing equipment can adjust the distribution of polymers in the edge region of the wafer to be processed.

Description

RF electrode assembly for plasma treatment equipment and plasma treatment equipment

The present invention relates to the technical field of semiconductor equipment, in particular to a radio frequency electrode assembly used in plasma processing equipment and plasma processing equipment.

In the field of semiconductor manufacturing technology, it is often necessary to perform plasma treatment on the wafer to be treated. The process of performing plasma treatment on the wafer to be treated needs to be carried out in the plasma treatment equipment.

The plasma processing equipment includes a vacuum reaction chamber, and a carrier table for carrying wafers to be processed is arranged in the vacuum reaction chamber. The carrier table generally includes a base and an electrostatic chuck arranged above the base for fixing the wafer.

However, existing wafer processing equipment is difficult to adjust the polymer distribution in the edge region of the wafer to be processed.

In view of this, the present invention provides a radio frequency electrode assembly for plasma processing equipment and plasma processing equipment. The plasma processing equipment can adjust the polymer distribution in the edge region of the wafer to be processed.

In order to solve the above technical problems, the present invention provides a radio frequency electrode assembly for plasma processing equipment, including: a base, a first fluid channel is arranged in the base, the first fluid channel is connected to the first A fluid source; an electrostatic chuck on the base, on which the wafer to be processed is placed; a focus ring on the periphery of the electrostatic chuck; a heat conduction ring around the base, and the heat conduction ring at least partially surrounds the base , the heat conduction ring is located below the focus ring, a second fluid channel is arranged in the heat conduction ring, the second fluid channel is connected to a second fluid source, and heat conduction can be performed between the heat conduction ring and the focus ring, when the edge region of the wafer to be processed is formed When the dimension of the groove parallel to the surface of the wafer to be processed is greater than the target size, the temperature of the second fluid source is increased, and when the groove formed in the edge region of the wafer to be processed is parallel to the surface of the wafer to be processed When the size of the wafer surface is smaller than the target size, the temperature of the second fluid source is decreased.

Optionally, there is a gap between the heat conduction ring and the base.

Optionally, the width of the gap is greater than or equal to 0.5 mm.

Optionally, the gap is filled with a heat insulating material layer; the material of the heat insulating material layer includes: Teflon or polyetherimide or polyether ether ketone or polyimide.

Optionally, it further includes: a heat conduction coupling ring located between the focus ring and the heat conduction ring; a heat conduction structure located between the heat conduction coupling ring and the heat conduction ring; a bottom grounding ring surrounding the heat conduction ring; located between the bottom ground ring and the heat conduction ring The insulating ring, the insulating ring surrounds the heat conduction ring.

Optionally, the material of the thermally conductive coupling ring includes: alumina or quartz.

Optionally, it further includes: a bottom plate located below the base.

Optionally, the bottom plate and the heat conduction ring are connected to each other, or the bottom plate and the heat conduction ring are separated from each other.

Optionally, the second fluid channel sequentially includes N areas along the circumferential direction, N is a natural number greater than or equal to 1, the first area of the second fluid channel is connected to the fluid input port, and the Nth area of the second fluid channel is connected to the flow channel. The body output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first carrying surface, and the first carrying surface is used to carry the wafer to be processed.

Optionally, along the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.

Optionally, along the direction perpendicular to the first bearing surface, each area of the second fluid channel has the same size, and the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focus ring decreases in turn. Small.

Optionally, along the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, the distance from the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel to the bottom of the focus ring Decreasing in turn, the distance from the top of the Nth zone of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focus ring.

Optionally, along the direction perpendicular to the first bearing surface, the sizes of the first area of the second fluid channel to the N-1th area of the second fluid channel increase sequentially; the first area of the second fluid channel to the Nth area of the second fluid channel The distance from the bottom of the N zone to the bottom of the focus ring is equal; the distance from the top of the N zone of the second fluid channel to the top of the N zone of the second fluid channel to the bottom of the focus ring decreases in turn.

Optionally, along the direction perpendicular to the first bearing surface, the sizes of the first area of the second fluid channel to the N-1th area of the second fluid channel increase sequentially, and the size of the Nth area of the second fluid channel is smaller than that of the second fluid channel. The size of the N-1 zone of the channel; the distance from the first zone of the second fluid channel to the bottom of the N zone of the second fluid channel to the bottom of the focus ring is equal; the first zone of the second fluid channel to the N-1 zone of the second fluid channel The distance from the top to the bottom of the focus ring decreases successively, and the distance from the top of the Nth section of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 section of the second fluid channel to the bottom of the focus ring.

Optionally, the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel rises smoothly or stepwise.

Optionally, the number of turns of the second fluid channel is 1 turn or greater than 1 turn.

Optionally, it further includes: a measuring unit for measuring the size of the edge of the groove formed in the edge region of the wafer to be processed parallel to the surface of the wafer to be processed.

Correspondingly, the present invention also provides a plasma processing equipment comprising: a vacuum reaction chamber; a base located downstream of the vacuum reaction chamber, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; The electrostatic chuck on the electrostatic chuck is used to place the wafer to be processed; the focus ring is located on the periphery of the electrostatic chuck; the heat conduction ring is located around the base, the heat conduction ring is located below the focus ring, and the heat conduction ring at least partially surrounds the base seat, a second fluid channel is provided in the heat conduction ring, the second fluid channel is connected to a second fluid source, heat conduction can be performed between the heat conduction ring and the focus ring, when the groove formed in the edge region of the wafer to be processed is parallel to When the size of the surface of the wafer to be processed is larger than the target size, the temperature of the second fluid source is increased, and when the groove formed in the edge region of the wafer to be processed is smaller than the size of the groove parallel to the surface of the wafer to be processed When the target size is reached, the temperature of the second fluid source is lowered; the air inlet device located at the top of the vacuum reaction chamber is used for supplying reaction gas into the vacuum reaction chamber.

Optionally, the second fluid channel sequentially includes N areas along the circumferential direction, N is a natural number greater than or equal to 1, the channel of the first area of the second fluid is connected to the fluid input port, and the Nth area of the second fluid channel is connected to the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first carrying surface, and the first carrying surface is used to carry the wafer to be processed.

Optionally, along the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.

Optionally, along the direction perpendicular to the first bearing surface, each area of the second fluid channel has the same size, and the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focus ring decreases in turn. Small.

Optionally, along the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, the distance from the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel to the bottom of the focus ring Decreasing in turn, the distance from the top of the Nth zone of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focus ring.

Optionally, along the direction perpendicular to the first bearing surface, the dimensions of the second fluid channel from the first zone to the second fluid channel's N-1 zone increase sequentially; the second fluid channel from the first zone to the second fluid channel The distance from the bottom of the Nth area to the bottom of the focus ring is equal; the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focus ring decreases in turn.

Optionally, along the direction perpendicular to the first bearing surface, the sizes of the first area of the second fluid channel to the N-1th area of the second fluid channel increase sequentially, and the size of the Nth area of the second fluid channel is smaller than that of the second fluid channel. The size of the N-1 zone of the channel; the distance from the first zone of the second fluid channel to the bottom of the N zone of the second fluid channel to the bottom of the focus ring is equal; the first zone of the second fluid channel to the N-1 zone of the second fluid channel The distance from the top to the bottom of the focus ring decreases successively, and the distance from the top of the Nth section of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 section of the second fluid channel to the bottom of the focus ring.

Optionally, the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel rises smoothly or stepwise.

Optionally, the number of turns of the second fluid channel is 1 turn or greater than 1 turn.

Optionally, it further includes: a bottom plate located below the base.

Optionally, the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other.

Optionally, the air intake device includes an installation substrate arranged under the insulating window of the vacuum reaction chamber and a gas shower head arranged under the installation substrate; the plasma processing equipment further includes: a radio frequency power source, the radio frequency power source is connected to the base; Set the power source, and connect the bias power source to the base.

Optionally, the sidewall of the vacuum reaction chamber includes a second bearing surface; the plasma processing equipment further includes: an annular lining, the annular lining includes a sidewall protection ring and a bearing ring for fixing the sidewall protection ring on the second bearing surface; An insulating window on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; a radio frequency power source connected to the inductive coupling coil; a bias power source connected to the base.

Optionally, it further includes: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer to be processed parallel to the surface of the wafer to be processed.

Compared with the prior art, the present invention has the following beneficial effects: In the radio frequency electrode assembly for plasma processing equipment provided by the present invention, there is a heat conduction ring around the base, and a second fluid channel is arranged in the heat conduction ring, and the second fluid channel A second fluid source is connected, therefore, the temperature of the heat transfer ring can be adjusted by adjusting the temperature of the second fluid source. Heat conduction can be carried out between the heat conduction ring and the focus ring, therefore, by adjusting the temperature of the second fluid source, the temperature control of the focus ring can be realized, and the temperature difference between the focus ring and the edge of the wafer to be processed can be adjusted, therefore, can Adjusting the distribution of the polymer at the edge of the wafer to be processed is conducive to forming grooves that meet technical requirements in the edge area of the wafer to be processed.

It further includes: a measuring unit, the measuring unit is used to measure the dimension of the groove parallel to the surface of the wafer to be processed formed in the edge region of the wafer to be processed; when the measurement unit measures the dimension of the groove parallel to the surface of the wafer to be processed When greater than the target size, the temperature of the second fluid source is increased, when measuring When the dimension of the unit measurement groove parallel to the surface of the wafer to be processed is smaller than the target size, the temperature of the second fluid source is reduced, so it is beneficial for the groove formed in the edge region of the wafer to be processed to be parallel to the surface of the wafer to be processed. The dimension in the direction of the surface coincides with the target dimension.

Further, the second fluid channel sequentially includes N areas along the circumferential direction, N is a natural number greater than or equal to 1, the first area of the second fluid channel is connected to the fluid input port, the Nth area of the second fluid channel is connected to the fluid output port, and the second area of the second fluid channel is connected to the fluid output port. The fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port. It takes a certain time for the second fluid source to flow through the second fluid channel, so that there is a temperature difference between the second fluid source at the fluid input port and the fluid output port. In order to reduce the difference in the temperature control ability of the second fluid source in the second fluid channel in different regions, the distance from the top of the second fluid channel to the N-1th zone of the second fluid channel to the top of the N-1 zone of the second fluid channel to the bottom of the focus ring is sequentially reduced, and the second The distance from the top of the Nth area of the fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focus ring, which is beneficial to improve the temperature uniformity in different areas of the focus ring.

11: Base

110: edge ring

12: Electrostatic chuck

13: Focus ring

14: Accessory plate

141: bottom plate

142: heat conduction ring

142a: The first ring

142b: the second ring

15: Second fluid channel

16: Insulation layer

17: Thermal coupling ring

18: Bottom grounding ring

19: insulating ring

20: Second fluid channel

20a: Fluid input port

20b: Fluid outlet

21: Plasma treatment equipment

22: Air intake device

221: Install the substrate

222: Gas sprinkler head

24: Vacuum reaction chamber

30: second fluid channel

30a, 40a: fluid input port

30b, 40b: fluid outlet

40: second fluid channel

A, B, C: first fluid channel

C1: District 1

C2: the second area

C3: the third area

C4: District 4

C5: District 5

C6: District Six

C7: District Seven

D: the first bearing surface

E: connection area

W: wafer to be processed

Y: Circumferential

Figure 1 is a schematic structural view of a plasma processing device including a radio frequency electrode assembly provided by an embodiment of the present invention; Figure 2 is a schematic structural view of another radio frequency electrode assembly used in a plasma processing device provided by an embodiment of the present invention; Figure 3 is a schematic structural view of another radio frequency electrode assembly used in plasma processing equipment provided by an embodiment of the present invention; Figure 4 is a schematic structural view of a heat conduction ring provided by an embodiment of the present invention; Figure 5 is a structural schematic drawing of the second fluid channel in a heat conduction ring provided by an embodiment of the present invention as an entity; Figure 6 is a structural schematic view of the second fluid channel in another heat conduction ring provided by an embodiment of the present invention drawn as an entity ; Fig. 7 is a structural schematic diagram of the second fluid channel drawn as an entity in another heat conduction ring provided by an embodiment of the present invention.

In order to solve the problem that the existing plasma processing equipment in the background technology is difficult to adjust the polymer distribution in the edge area of the wafer to be processed, the present invention provides a radio frequency electrode assembly and plasma processing equipment for plasma processing equipment, wherein the The radio frequency electrode assembly of the pulp processing equipment includes: a base, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; an electrostatic chuck located on the base; a focus ring located on the periphery of the electrostatic chuck; A heat conduction ring located around the base, the heat conduction ring surrounds part of the base, the heat conduction ring is located below the focus ring, a second fluid channel is arranged in the heat conduction ring, the second fluid channel is connected to a second fluid source, and the heat conduction ring and the focus ring can be Conduct heat conduction. Plasma processing equipment can adjust the distribution of polymers in the edge region of the wafer to be processed.

In order to make the technical problems, technical solutions and technical effects solved by the present invention clearer and more complete, the specific implementation manners of the present invention will be described in detail below in conjunction with the drawings.

Fig. 1 is a schematic structural diagram of a plasma treatment device including a radio frequency electrode assembly provided by an embodiment of the present invention.

Please refer to Fig. 1, the plasma processing equipment 21 includes: a vacuum reaction chamber 24; a base 11 located at the bottom of the vacuum reaction chamber 24, the base 11 is provided with first fluid passages A, B, C, the first fluid passage Tracks A, B, and C are connected to the first fluid source (not shown), and the base 11 is located in the vacuum reaction chamber 24; the electrostatic chuck 12 on the base 11 is used to carry the wafer to be processed. Circle W; the focus ring 13 located on the periphery of the electrostatic chuck 12; the heat conduction ring 142 located around the base 11, the heat conduction ring 142 at least partially surrounds the base 11, the heat conduction ring 142 is located below the focus ring 13, and the heat conduction ring 142 is provided with The second fluid channel 15, the second fluid channel 15 is connected to the second fluid source (not shown in the figure), heat conduction can be carried out between the heat conduction ring 142 and the focus ring 13; The gas device 22 is used to supply reaction gas into the vacuum reaction chamber 24 .

In the present embodiment, the plasma processing equipment 21 is a capacitively coupled plasma processing equipment (CCP), and the gas inlet device 22 includes: a mounting substrate 221 disposed on the top of the vacuum reaction chamber 24 and a gas shower disposed below the mounting substrate 221 Head 222. The gas shower head 222 serves as the upper electrode, the base 11 serves as the lower electrode, and the RF power source is connected to the upper electrode or the lower electrode. The radio frequency signal generated by the radio frequency power source transforms the reaction gas into plasma through the capacitance formed by the upper electrode and the lower electrode. The bias power source is connected to the base 11 so that the plasma moves uniformly toward the surface of the base 11 . The pedestal 11 is used to carry the wafer W to be processed, so it is beneficial for the plasma to move to the surface of the wafer W to be processed, and the wafer W to be processed is processed.

In other embodiments, the plasma processing equipment includes: an inductively coupled plasma processing equipment (ICP); the side wall of the vacuum reaction chamber includes a second bearing surface, and the inductively coupled plasma processing equipment further includes: an annular lining, and the annular lining includes a side wall The protective ring and the bearing ring for fixing the sidewall protective ring on the second bearing surface; the insulating window located on the vacuum reaction chamber; the inductance coil located on the insulating window; the inductance coil is connected with a radio frequency power source, so that the reaction gas is converted into plasma The pedestal is connected to a bias power source, so that the plasma moves toward the surface of the pedestal, which is beneficial for the plasma to process the wafer to be processed.

The focus ring 13 is located on the periphery of the electrostatic chuck 12, and the focus ring 13 can control the temperature, air flow and electric field distribution at the edge of the wafer W to be processed, thereby controlling the processing effect on the edge of the wafer W to be processed.

As an example, since the wafer W to be processed is generally a silicon wafer, the material of the focus ring 13 includes silicon or silicon carbide, so that the contamination of the wafer W to be processed by the focus ring 13 can be reduced.

The electrostatic chuck 12 includes a first carrying surface D, the first carrying surface D is used to carry the wafer to be processed, the electrostatic chuck 12 is located on the base 11, and the base 11 is provided with first fluid channels A, B, C The first fluid channels A, B, and C are connected to the first fluid source, therefore, the temperature of the wafer to be processed can be adjusted by adjusting the temperature of the first fluid source. However, it is difficult to adjust the temperature of the edge region of the wafer to be processed by the first fluid source. A second fluid channel 15 is disposed inside the heat conduction ring 142, and the second fluid channel 15 is connected to a second fluid source. By adjusting the temperature of the second fluid source, the temperature control of the heat conduction ring 142 can be realized, and heat conduction can be carried out between the heat conduction ring 142 and the focus ring 13. Therefore, the focus ring 13 can be controlled by adjusting the temperature of the second fluid source. temperature control, the temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted, therefore, the distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to the formation of a polymer that meets the technical requirements in the edge area of the wafer W to be processed. of the groove.

It further includes: a measurement unit, the measurement unit is used to measure the size of the groove formed in the edge region of the wafer W to be processed along the surface parallel to the surface of the wafer W to be processed; When the size of the surface is larger than the target size, the temperature of the second fluid source is raised, and when the size of the measurement unit measurement groove parallel to the surface of the wafer W to be processed is smaller than the target size, the temperature of the second fluid source is reduced, so , it is beneficial that the size of the groove formed in the edge region of the wafer W to be processed along the direction parallel to the surface of the wafer W to be processed is consistent with the target size.

In this embodiment, the first fluid source is the first cooling liquid, and the second fluid source is the second cooling liquid.

In this embodiment, the second fluid channel 15 includes N areas sequentially along the circumferential direction, N is a natural number greater than or equal to 1, the first area of the second fluid channel 15 is connected to the fluid input port, and the second fluid channel 15 The N area is connected to the fluid output port, the second fluid source enters the second fluid channel 15 from the fluid input port, and flows out of the second fluid channel 15 from the fluid output port.

In this embodiment, along the direction perpendicular to the first carrying surface D, the size of each zone of the second fluid channel 15 is equal, and the distance from the top of each zone of the second fluid channel 15 to the bottom of the focus ring 13 is equal. The processing method of the second fluid channel includes: providing the first plate; forming the second fluid channel 15 in the first plate, and along the direction perpendicular to the first bearing surface D, the size of each area of the second fluid channel 15 is equal ; Provide a second plate, weld the second plate to the first plate, and seal all the second fluid passages 15 by the second plate. Since the dimensions of each zone of the second fluid channel 15 along the direction perpendicular to the first bearing surface D are equal, and the distance from the top of each zone of the second fluid channel 15 to the bottom of the focus ring 13 is equal, the second fluid channel 15 is The two regions can be processed and formed at the same time, so it is beneficial to reduce the complexity and difficulty of forming the second fluid channel 15 .

In this embodiment, there is a gap between the heat conduction ring 142 and the base 11, so that the thermal influence of the heat conduction ring 142 on the base 11 is small, and the base 11 is used to carry the wafer to be processed. The temperature effect in the central region of the wafer W is processed.

In other embodiments, the thermally conductive ring is in contact with the base.

In this embodiment, the width of the gap is greater than or equal to 0.5 mm, so as to reduce the heat conduction capacity between the heat conduction ring 142 and the base 11 .

In other embodiments, the width of the gap is less than 0.5 mm.

In this embodiment, the gap is filled with a heat insulating material layer 16, and the heat insulating material layer 16 has a strong heat conduction ability to isolate the heat conduction ring 142 from the base 11, so that the thermal influence of the heat conduction ring 142 on the base 11 is stronger. Small, it is beneficial to further reduce the influence of the temperature in the central area of the wafer W to be processed.

The material of the heat insulating material layer 16 includes: Teflon or polyetherimide or polyether ether ketone or polyimide.

In this embodiment, it further includes: a bottom plate 141 , both ends of the bottom plate 141 are connected to the heat conduction ring 142 , and the bottom plate 141 and the heat conduction ring 142 are integrally formed. The bottom plate 141 and the heat conduction ring 142 constitute the accessory plate 14 .

In this embodiment, it further includes: a thermally conductive coupling ring 17 located between the focusing ring 13 and the thermally conductive ring 142 . The heat conduction coupling ring 17 can promote the heat conduction between the heat conduction ring 142 and the focus ring 13 , and then the temperature of the focus ring 13 can be quickly adjusted by the heat conduction coupling ring 17 . As an example, the thermally conductive coupling ring 17 is generally made of a material with good thermal conductivity but electrical insulation, for example, the material of the thermally conductive coupling ring 17 includes: alumina or quartz.

In other embodiments, a thermally conductive coupling ring is not included.

In this embodiment, it further includes: setting a heat conduction structure (not shown in the first figure) between the heat conduction coupling ring 17 and the heat conduction ring 142 . The heat conduction structure is used to further improve the heat conduction capability between the heat conduction ring 142 and the focus ring 13 .

In other embodiments, no thermally conductive structures are included.

In this embodiment, the radio frequency electrode assembly used in the plasma processing equipment may further include: a bottom ground ring 18, the bottom ground ring 18 surrounds the heat conduction ring 142, and the bottom ground ring 18 can guide the coupled radio frequency current in the vacuum reaction chamber to the ground .

In this embodiment, the radio frequency electrode assembly for plasma processing equipment may further include: an insulating ring 19 disposed between the bottom grounding ring 18 and the heat conduction ring 142 . Wherein, the insulating ring 19 and the bottom grounding ring 18 surround the heat conduction ring 142 . In order to accommodate the heat conducting ring 142 , the insulating ring 19 and the bottom grounding ring 18 are moved away from the base 11 .

In this embodiment, the radio frequency electrode assembly used in the plasma processing equipment further includes: an edge ring 110 disposed on the periphery of the focus ring 13 . The edge ring 110 is used to converge the electromagnetic field distribution in the edge area of the vacuum reaction chamber 24 .

In other embodiments, edge rings are not included.

In this embodiment, the plasma treatment equipment includes a radio frequency electrode assembly for the plasma treatment equipment, and the radio frequency electrode assembly for the plasma treatment equipment includes: a base 11 in which a first fluid channel A, B, C, the first fluid channel A, B, C is connected to the first fluid source; the electrostatic chuck 12 on the base 11 is used to carry the wafer to be processed; the focus on the periphery of the electrostatic chuck 12 Ring 13; a heat conduction ring 142 located around the base 11, the heat conduction ring 142 surrounds part of the base 11, the heat conduction ring 142 is located below the focus ring 13, a second fluid passage 15 is arranged in the heat conduction ring 13, and the second fluid passage 15 is connected to the first The heat conduction between the two fluid sources, the heat conduction ring 142 and the focus ring 13 is possible.

Fig. 2 is a schematic structural diagram of another RF electrode assembly used in plasma processing equipment provided by an embodiment of the present invention.

The difference between the radio frequency electrode assembly of this embodiment and the radio frequency electrode assembly of the embodiment shown in Figure 1 is only that: the first area of the second fluid channel 15 to the top of the N-1 area of the second fluid channel 15 to the bottom of the focus ring 13 The distance decreases successively, the distance from the top of the Nth area of the second fluid channel 15 to the bottom of the focus ring 13 is greater than the distance from the top of the N-1 area of the second fluid channel 15 to the bottom of the focus ring 13, meaning that: the second fluid channel 15 The first area is connected to the fluid input port, the Nth area of the second fluid channel 15 is connected to the fluid output port, the second fluid source flows into the second fluid channel 15 from the fluid input port, and after passing through each area of the second fluid channel 15, from the fluid outlet. It takes a certain time for the second fluid source to flow through the second fluid channel 15 , so that there is a temperature difference between the second fluid source at the fluid input port and the fluid output port. In order to reduce the difference in the temperature control ability of the second fluid source in the second fluid channel 15 in different regions, the top of the second fluid channel 15 from the first zone to the N-1th zone to the poly The distance at the bottom of the focus ring 13 decreases successively. But, because the fluid output port is closer to the fluid input port, the second fluid source of the fluid input port affects the temperature of the second fluid source of the fluid output port, so that the second fluid source of the fluid input port and the second fluid source of the fluid output port If the temperature difference of the fluid source is not too large, the distance from the top of the Nth zone to the bottom of the focus ring 13 is greater than the distance from the top of the N-1th zone to the bottom of the focus ring 13, which is conducive to improving the uniformity of temperature in different regions of the focus ring 13.

In addition, although it is difficult to adjust the temperature of the edge region of the wafer W to be processed by using the first fluid source, there is a second fluid channel 15 in the heat conduction ring 142, and the second fluid source in the second fluid channel 15 can adjust the temperature of the focus ring 13. temperature, the temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to forming a groove meeting the technical requirements in the edge region of the wafer W to be processed. groove.

In this embodiment, along the direction perpendicular to the first bearing surface D, the size of each zone of the second fluid channel 15 is equal.

In other embodiments, along the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal, and the distance from the top of the first zone of the second fluid channel to the Nth zone of the second fluid channel to the bottom of the focus ring Decrease in turn.

In this embodiment, the plasma processing equipment includes: a capacitively coupled plasma processing equipment (CCP) or an inductively coupled plasma processing equipment (ICP).

Fig. 3 is a structural schematic diagram of another radio frequency electrode assembly used in plasma processing equipment provided by an embodiment of the present invention.

The difference between this embodiment and the embodiment shown in FIG. 2 is that along the direction perpendicular to the first bearing surface D, the sizes from the first area of the second fluid channel 20 to the N-1th area of the second fluid channel 20 are sequentially Increase, the size of the Nth zone of the second fluid channel 20 is smaller than the size of the N-1 zone of the second fluid channel 20; this implementation The same point as the embodiment shown in Fig. 2 is that the distance from the top of the first zone of the second fluid channel 20 to the N-1 zone of the second fluid channel 20 to the bottom of the focus ring 13 decreases successively, and the second fluid channel 20 The distance from the top of the Nth area to the bottom of the focus ring 13 is greater than the distance from the top of the N-1th area of the second fluid channel 20 to the bottom of the focus ring 13 . The significance of setting the distance from the top of the second fluid channel 20 to the bottom of the focus ring 13 is the same as that of the embodiment in FIG. 2 , and will not be repeated here.

Although it is difficult to adjust the temperature of the edge region of the wafer W to be processed by using the first fluid source, there is a second fluid channel 20 in the heat conduction ring 142, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focus ring 13, The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, the distance from the bottom of each area of the second fluid channel 20 to the bottom of the focus ring 13 is equal.

In this embodiment, the bottom plate 141 and the heat conduction ring 142 are separated from each other. Since the bottom plate 141 is located at the bottom of the base 11, and the heat conduction ring 142 and the bottom plate 141 are separated from each other, the influence between the heat conduction ring 142 and the base 11 is small, which is conducive to reducing the central area of the heat conduction ring 142 to be processed. temperature influence.

In other embodiments, the bottom plate 141 and the heat conduction ring 142 are connected to each other.

In this embodiment, it further includes: setting a heat insulation layer (not shown in the figure) between the bottom plate 141 and the heat conduction ring 142 , and the heat insulation layer is used to isolate the bottom plate 141 and the heat conduction ring 142 . The heat insulation layer is used to further reduce the heat conduction between the heat conduction ring 142 and the bottom plate 141 , which is beneficial to further reduce the temperature influence of the heat conduction ring 142 on the central area of the wafer to be processed.

In other embodiments, no insulating layer is formed.

In this embodiment, the plasma processing equipment includes: a capacitively coupled plasma processing equipment (CCP) or an inductively coupled plasma processing equipment (ICP).

The heat conduction ring 142 will be described in detail below, please refer to FIG. 4 .

Fig. 4 is a schematic structural diagram of a heat conduction ring provided by an embodiment of the present invention.

In this embodiment, the heat conduction ring 142 includes a first ring portion 142a between the base 11 (see FIG. 3 ) and the insulating ring 19 (see FIG. 3 ), and extends from the first ring portion 142a to a part of the bottom flat plate. 21 (see Figure 3) below the second ring portion 142b, making the heat conduction ring 142 easy to install.

In other embodiments, the heat conduction ring is only the first ring portion.

In this embodiment, the first area of the second fluid channel 20 to the top of the N-1 area of the second fluid channel 20 rises sequentially, and the distance from the top of the Nth area of the second fluid channel 20 to the bottom of the focus ring is greater than that of the second fluid channel The distance from the top of the 20th N-1 zone to the bottom of the focus ring, which is due to: the first zone of the second fluid channel 20 is connected to the fluid input port, and the Nth zone of the second fluid channel 20 is connected to the fluid output port, that is, the second fluid channel The 20th zone N is close to the first zone of the second fluid channel 20, and the temperature of the second fluid source in the first zone of the second fluid channel 20 is relatively low, and the second fluid source in the first zone will affect the second fluid source in the Nth zone temperature, so that the temperature of the second fluid source in the Nth zone is not too high, so that the second fluid source in the Nth zone has a stronger temperature control ability on the focus ring 13, so that the top of the second fluid channel 20 in the Nth zone to The distance at the bottom of the focus ring does not have to be designed too small.

In this embodiment, the second fluid channel 20 is a circle.

The shape of the second fluid channel 20 in FIG. 4 is described in detail below, please refer to FIGS. 5 to 7 for details.

Fig. 5 is a schematic structural diagram of a second fluid channel in a heat conduction ring provided by an embodiment of the present invention.

The second fluid channel 20 sequentially includes N regions along the circumferential direction Y, where N is a natural number greater than or equal to 1.

In this embodiment, the second fluid channel 20 includes seven zones as an example for illustration. The tops of the first zone C1 to the sixth zone C6 of the second fluid channel 20 rise in steps. The distance from the top of the seventh zone C7 to the bottom of the focus ring 13 is greater than the distance from the top of the sixth zone C6 of the second fluid channel 20 to the bottom of the focus ring. The significance of setting the depths of the seven zones of the second fluid channel 20 is the same as that of setting the depths of the N zones of the second fluid channel in the embodiment in FIG. 4 , and details are not repeated here.

The first area C1 of the second fluid channel 20 is connected to the fluid input port 20a, and the Nth area of the second fluid channel 20 is connected to the fluid output port 20b.

Although it is difficult to adjust the temperature of the edge area of the wafer to be processed by using the first fluid source, there is a second fluid channel 20 in the heat conduction ring 142, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focus ring 13, then The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, two adjacent areas are connected by a connection area E, and there is an angle between the connection area E and the horizontal plane, and the first area C1, the second area C2, the third area C3, and the fourth area C4 , the tops of the fifth zone C5, the sixth zone C6 and the seventh zone C7 are parallel to the horizontal plane. Such a design of the second fluid channel 30 is beneficial to reduce the difficulty of processing the second fluid channel 30 .

In other embodiments, there is an angle between the top of the second fluid channel sub-region and the horizontal plane.

In this embodiment, the second fluid channel 30 is a circle.

FIG. 6 is a structural schematic diagram of another second fluid channel in the heat conduction ring provided by an embodiment of the present invention, which is drawn as a solid body.

The difference between this embodiment and the embodiment in FIG. 5 is that the top of the second fluid channel 30 from the first area C1 to the sixth area C6 of the second fluid channel rises smoothly, so that the second fluid source is in the second fluid channel 30 flow is smoother.

The first area C1 of the second fluid channel 30 is connected to the fluid input port 30a, and the Nth area of the second fluid channel 30 is connected to the fluid output port 30b.

Although it is difficult to adjust the temperature of the edge area of the wafer to be processed by using the first fluid source, there is a second fluid channel 30 in the heat conduction ring 142, and the second fluid source in the second fluid channel 30 can adjust the temperature of the focus ring 13, then The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, the second fluid channel 30 is a circle.

Fig. 7 is a structural schematic diagram of another second fluid channel in the heat conduction ring provided by an embodiment of the present invention, which is drawn as a solid body.

In this embodiment, the second fluid channel 40 has two turns, so that the contact area between the second fluid channel 40 and the focus ring 13 is relatively large, and the temperature control ability of the second fluid channel 40 on the focus ring 13 is relatively strong.

In this embodiment, a fluid input port 40a and a fluid output port 40b are provided.

Although it is difficult to adjust the temperature of the edge area of the wafer to be processed by using the first fluid source, there is a second fluid channel 40 in the heat conduction ring 142, and the second fluid source in the second fluid channel 40 can adjust the temperature of the focus ring 13, then The temperature difference between the focus ring 13 and the edge of the wafer W to be processed is adjustable, therefore, The distribution of the polymer at the edge of the wafer W to be processed can be adjusted, which is conducive to the formation of grooves meeting technical requirements in the edge area of the wafer W to be processed.

In other embodiments, the number of turns of the second fluid channel is greater than two turns.

Although the present invention is disclosed above, the present invention is not limited thereto. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the scope of the patent application.

11: base

110: edge ring

12: Static clamp ring

13: Focus ring

14: Accessory plate

141: bottom plate

142: heat conduction ring

15: Second fluid channel

16: Insulation layer

17: Thermal coupling ring

18: Bottom grounding ring

19: insulating ring

21: Plasma treatment equipment

22: Air intake device

221: Install the substrate

222: Gas sprinkler head

24: Vacuum reaction chamber

A, B, C: first fluid channel

W: wafer to be processed

Claims (31)

A radio-frequency electrode assembly for plasma processing equipment, which includes: a base, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; an electrostatic chuck is located on the base On the seat, the electrostatic chuck is used to place a wafer to be processed; a focus ring is located on the periphery of the electrostatic chuck; a heat conduction ring is located around the base, the heat conduction ring is located below the focus ring, and the heat conduction A ring at least partially surrounds the base, a second fluid channel is arranged in the heat conduction ring, the second fluid channel is connected to a second fluid source, heat conduction can be performed between the heat conduction ring and the focus ring, when the crystal to be processed When the dimension of the groove formed in the edge region of the circle parallel to the surface of the wafer to be processed is greater than the target size, the temperature of the second fluid source is increased, and when the groove formed in the edge region of the wafer to be processed is When the dimension parallel to the surface of the wafer to be processed is smaller than the target dimension, the temperature of the second fluid source is decreased. The radio frequency electrode assembly as claimed in claim 1, wherein there is a gap between the heat conduction ring and the base. The radio frequency electrode assembly as claimed in claim 2, wherein the width of the gap is greater than or equal to 0.5 mm. The radio frequency electrode assembly as claimed in item 2, wherein the gap is filled with a heat insulating material layer; the material of the heat insulating material layer includes: Teflon or polyetherimide or polyether ether ketone or polyimide . The radio frequency electrode assembly as described in any one of claim items 1 to 4, which further comprises: a heat conduction coupling ring between the focus ring and the heat conduction ring; a heat conduction structure located between the heat conduction coupling ring and the heat conduction ring; a bottom ground ring surrounding the heat conduction ring; a ground ring between the bottom ground ring and the heat conduction ring An insulating ring between the rings that surrounds the thermally conductive ring. The radio frequency electrode assembly as claimed in item 5, wherein the material of the thermally conductive coupling ring includes: alumina or quartz. The radio frequency electrode assembly as claimed in claim 1, further comprising: a bottom plate located below the base. The radio frequency electrode assembly as claimed in item 7, wherein the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other. The radio frequency electrode assembly as claimed in item 1, wherein the second fluid channel sequentially includes N areas along the circumferential direction, N is a natural number greater than or equal to 1, and a first area of the second fluid channel is connected to a fluid input port , the Nth area of the second fluid channel is connected to a fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes A first carrying surface, the first carrying surface is used for carrying the wafer to be processed. The radio frequency electrode assembly as claimed in claim 9, wherein along the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the top of each zone of the second fluid channel to the bottom of the focus ring distances are equal. The radio frequency electrode assembly as claimed in claim 9, wherein in the direction perpendicular to the first bearing surface, each area of the second fluid passage is equal in size, and the second fluid passage is from the first area to the second fluid The distance from the top of the Nth zone of the channel to the bottom of the focus ring decreases successively. The radio frequency electrode assembly as claimed in claim 9, wherein in the direction perpendicular to the first bearing surface, each area of the second fluid channel is equal in size, and the second fluid channel is the first The distance from the top of the N-1th zone of the second fluid channel to the bottom of the focus ring decreases in turn, and the distance from the top of the N-th zone of the second fluid channel to the bottom of the focus ring is greater than that of the N-1th zone of the second fluid channel The distance from the top of the zone to the bottom of the focus ring. The radio frequency electrode assembly as claimed in claim 9, wherein along the direction perpendicular to the first bearing surface, the size of the second fluid channel from the first zone to the N-1th zone of the second fluid channel increases sequentially; the The distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focus ring is equal; the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the focus ring The distance at the bottom decreases successively. The radio frequency electrode assembly as claimed in claim 9, wherein along the direction perpendicular to the first bearing surface, the size of the second fluid channel from the first zone to the N-1th zone of the second fluid channel increases sequentially, the The size of the Nth zone of the second fluid channel is smaller than the size of the N-1 zone of the second fluid channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focus ring is equal The distance from the top of the N-1 zone of the second fluid channel to the top of the N-1 zone of the second fluid channel to the bottom of the focus ring decreases in turn, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focus ring is greater than The distance from the top of the N-1th zone of the second fluid channel to the bottom of the focus ring. The radio frequency electrode assembly as claimed in claim 11 or 12 or 13 or 14, wherein the top of the second fluid channel from the first zone to the N-1th zone of the second fluid channel rises smoothly or stepwise. The radio frequency electrode assembly as claimed in claim 1, wherein the number of turns of the second fluid channel is 1 turn or more than 1 turn. The radio frequency electrode assembly as claimed in claim 1, further comprising: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer to be processed along the direction parallel to the surface of the wafer to be processed. A plasma processing equipment, which includes: a vacuum reaction chamber; a base, located downstream of the vacuum reaction chamber, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; an electrostatic A chuck, located on the base, is used to place a wafer to be processed on the electrostatic chuck; a focus ring located on the periphery of the electrostatic chuck; a heat conduction ring located around the base, the heat conduction ring is located on the focus Below the ring, and the heat conduction ring at least partially surrounds the base, a second fluid channel is arranged in the heat conduction ring, and the second fluid channel is connected to a second fluid source, and heat conduction can be performed between the heat conduction ring and the focusing ring , when the dimension of the groove formed in the edge region of the wafer to be processed is larger than the target size parallel to the surface of the wafer to be processed, the temperature of the second fluid source is increased, and when the groove is formed at the edge of the wafer to be processed When the size of the groove formed in the area parallel to the surface of the wafer to be processed is smaller than the target size, the temperature of the second fluid source is reduced; an air inlet device located at the top of the vacuum reaction chamber is used for Reactive gas is supplied into the vacuum reaction chamber. The plasma processing equipment as claimed in claim 18, wherein the second fluid channel sequentially includes N zones along the circumferential direction, N is a natural number greater than or equal to 1, and a first zone channel of the second fluid channel is connected to a fluid The input port, the Nth area of the second fluid channel is connected to a fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic clamp The tray includes a first carrying surface for carrying the wafer to be processed. The plasma processing equipment as claimed in claim 19, wherein the edge perpendicular to the first carrying surface In the direction of , the size of each zone of the second fluid channel is equal; the distance from the top of each zone of the second fluid channel to the bottom of the focusing ring is equal. The plasma processing device as claimed in claim 19, wherein in the direction perpendicular to the first carrying surface, each area of the second fluid channel has the same size, and the second fluid channel from the first area to the second The distance from the top of the Nth region of the fluid channel to the bottom of the focus ring decreases successively. The plasma processing device as claimed in claim 19, wherein in the direction perpendicular to the first carrying surface, each area of the second fluid channel has the same size, and the second fluid channel from the first area to the second The distance from the top of the N-1 section of the fluid channel to the bottom of the focus ring decreases sequentially, and the distance from the top of the N-1 section of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 section of the second fluid channel to the focus ring. The distance from the bottom of the ring. The plasma processing equipment as claimed in claim 19, wherein along the direction perpendicular to the first carrying surface, the size of the second fluid channel from the first zone to the N-1th zone of the second fluid channel increases sequentially; The distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focus ring is equal; the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the focus The distance at the bottom of the ring decreases successively. The plasma processing equipment as claimed in claim 19, wherein along the direction perpendicular to the first carrying surface, the dimensions of the second fluid channel from the first zone to the N-1th zone of the second fluid channel increase sequentially, The size of the Nth zone of the second fluid channel is smaller than the size of the N-1 zone of the second fluid channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focus ring equal; the distance from the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focus ring decreases in turn, and the distance from the top of the Nth area of the second fluid channel to the bottom of the focus ring is greater than The distance from the top of the N-1th zone of the second fluid channel to the bottom of the focus ring. The plasma processing equipment as claimed in claim 21 or 22 or 23 or 24, wherein the first area of the second fluid channel to the top of the N-1th area of the second fluid channel ascends smoothly or stepwise. The plasma processing equipment as claimed in claim 18, wherein the number of turns of the second fluid channel is 1 turn or more than 1 turn. The plasma processing apparatus as claimed in claim 18, further comprising: a bottom plate located below the susceptor. The plasma processing equipment as claimed in claim 27, wherein the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other. The plasma processing equipment as claimed in claim 18, wherein the air inlet device includes a mounting substrate disposed on the top of the vacuum reaction chamber and a gas shower head disposed below the mounting substrate; the plasma processing equipment further includes : a radio frequency power source connected to the base; a bias power source connected to the base. The plasma processing equipment as described in claim 18, wherein the side wall of the vacuum reaction chamber includes a second bearing surface; the plasma processing equipment further includes: an annular lining, the annular lining includes a side wall protection ring and the The sidewall protection ring is fixed on the bearing ring on the second bearing surface; an insulating window located on the vacuum reaction chamber; an inductively coupled coil located on the insulating window; a radio frequency power source connected to the inductively coupled coil; connected to the Bias power source for the base. The plasma processing equipment as claimed in claim 18, further comprising: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer to be processed along the direction parallel to the surface of the wafer to be processed .