TW202029404A - Radio Frequency Electrode Assembly for Plasma Processing Apparatus, And Plasma Processing Apparatus - Google Patents

Abstract

Disclosed are a radio frequency electrode assembly for a plasma processing apparatus, and a plasma processing apparatus, wherein the radio frequency electrode assembly for a plasma processing apparatus comprises: a base in which a first fluid passage is provided, the first fluid passage being configured for connecting to a first fluid source; an electrostatic chuck disposed on the base; a focus ring disposed peripheral to the electrostatic chuck; a heat conducting ring disposed around the base, the heat conducting ring enclosing at least part of the base, the heat conducting ring being disposed below the focus ring, a second fluid passage being provided in the heat conducting ring, the second fluid passage being connected to a second fluid source, heat conduction being enabled between the heat conducting ring and the focus ring. The plasma processing apparatus can adjust polymers distribution in the edge area of the to-be-processed substrate.

Description

Radio frequency electrode assembly for plasma processing equipment and plasma processing equipment

The present invention relates to the technical field of semiconductor equipment, and in particular relates to a radio frequency electrode assembly used in plasma processing equipment and plasma processing equipment.

In the field of semiconductor manufacturing technology, plasma processing of wafers to be processed is often required. The plasma processing process of the wafer to be processed needs to be performed in the plasma processing equipment.

The plasma processing equipment includes a vacuum reaction chamber. The vacuum reaction chamber is provided with a carrying table for carrying the wafer to be processed. The carrying table usually includes a base and an electrostatic chuck arranged above the base for fixing the wafer.

However, it is difficult for the existing wafer processing equipment to adjust the polymer distribution in the edge area of the wafer to be processed.

In view of this, the present invention provides a radio frequency electrode assembly for plasma processing equipment and plasma processing equipment. The plasma processing equipment can adjust the polymer distribution in the edge area of the wafer to be processed.

In order to solve the above technical problems, the present invention provides a radio frequency electrode assembly for plasma processing equipment, including: a base, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; The electrostatic chuck is used to place the wafer to be processed on the electrostatic chuck; the focus ring is located on the periphery of the electrostatic chuck; the heat conduction ring is located around the base, and the heat conduction ring at least partially surrounds the base, and the heat conduction ring is located below the focus ring, A second fluid channel is arranged in the heat conduction ring, the second fluid channel is connected to the second fluid source, and heat conduction can be performed between the heat conduction ring and the focusing ring.

Optionally, there is a gap between the heat conducting ring and the base.

Optionally, the width of the gap is greater than or equal to 0.5 mm.

Optionally, the gap is filled with an insulating material layer; the material of the insulating material layer includes: Teflon, polyether imine, polyether ether ketone, or polyimide.

Optionally, it further includes: a thermally conductive coupling ring located between the focusing ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the thermally conductive ring; between the bottom ground ring and the thermally conductive ring The insulating ring surrounds the heat conduction ring.

Optionally, the material of the thermally conductive coupling ring includes: alumina or quartz.

Optionally, it further includes: a bottom plate located below the base.

Optionally, the bottom plate and the heat conduction ring are connected to each other, or the bottom plate and the heat conduction ring are separated from each other.

Optionally, the second fluid channel includes N zones in sequence along the circumferential direction, where N is a natural number greater than or equal to 1, the first zone of the second fluid channel is connected to the fluid input port, and the Nth zone of the second fluid channel is connected to the fluid output The second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first bearing surface, and the first bearing surface is used for bearing the wafer to be processed.

Optionally, in the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the distance from the top of each zone of the second fluid channel to the bottom of the focusing ring is equal.

Optionally, in the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is reduced in order small.

Optionally, along the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the distance from the top of the first zone of the second fluid channel to the N-1 zone of the second fluid channel to the bottom of the focusing ring Decrease sequentially, the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.

Optionally, along the direction perpendicular to the first bearing surface, the sizes of the first zone of the second fluid channel to the Nth zone of the second fluid channel increase in order; the first zone of the second fluid channel to the Nth zone of the second fluid channel The distance from the bottom to the bottom of the focus ring is equal; the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focus ring decreases in order.

Optionally, along the direction perpendicular to the first bearing surface, the size of the first zone of the second fluid channel to the N-1th zone of the second fluid channel increases sequentially, and the size of the Nth zone of the second fluid channel is smaller than that of the second fluid The size of the N-1th zone of the channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring is equal; the first zone of the second fluid channel to the N-1th zone of the second fluid channel The distance from the top to the bottom of the focus ring decreases sequentially, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focus ring.

Optionally, the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel rises smoothly or stepwise.

Optionally, the number of turns of the second fluid channel is 1 turn or more than 1 turn.

Optionally, it further includes: a measuring unit for measuring the dimension of the groove edge formed in the edge area of the wafer to be processed parallel to the surface of the wafer to be processed; when the measuring unit measures the groove edge parallel to the wafer to be processed When the size of the circular surface is larger than the target size, the temperature of the second fluid source is increased. When the measurement unit measures the groove along the surface parallel to the wafer surface to be processed and the size is smaller than the target size, the temperature of the second fluid source is decreased.

Correspondingly, the present invention also provides a plasma processing equipment including: a vacuum reaction chamber; a base located downstream of the vacuum reaction chamber, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; The electrostatic chuck on the electrostatic chuck is used to place the wafer to be processed; the focus ring located on the periphery of the electrostatic chuck; the heat conduction ring located around the base, the heat conduction ring is located below the focus ring, and the heat conduction ring at least partially surrounds the base Seat, the heat conduction ring is provided with a second fluid channel, the second fluid channel is connected to the second fluid source, and the heat conduction ring and the focusing ring can conduct heat conduction; the air inlet device at the top of the vacuum reaction chamber, the air inlet device is used to Reactive gas is provided in the reaction chamber.

Optionally, the second fluid channel includes N zones in sequence along the circumferential direction, where N is a natural number greater than or equal to 1, the first zone channel of the second fluid is connected to the fluid input port, and the Nth zone of the second fluid channel is connected to the fluid output The second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first bearing surface, and the first bearing surface is used for bearing the wafer to be processed.

Optionally, in the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the distance from the top of each zone of the second fluid channel to the bottom of the focusing ring is equal.

Optionally, in the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is reduced in order small.

Optionally, along the direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the distance from the top of the first zone of the second fluid channel to the N-1 zone of the second fluid channel to the bottom of the focusing ring Decrease sequentially, the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.

Optionally, along the direction perpendicular to the first bearing surface, the size of the first zone of the second fluid channel to the Nth zone of the second fluid channel increases sequentially; the first zone of the second fluid channel to the Nth zone of the second fluid channel The distance from the bottom of the zone to the bottom of the focus ring is equal; the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focus ring decreases in order.

Optionally, along the direction perpendicular to the first bearing surface, the size of the first zone of the second fluid channel to the N-1th zone of the second fluid channel increases sequentially, and the size of the Nth zone of the second fluid channel is smaller than that of the second fluid The size of the N-1th zone of the channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring is equal; the first zone of the second fluid channel to the N-1th zone of the second fluid channel The distance from the top to the bottom of the focus ring decreases sequentially, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focus ring.

Optionally, the top of the first zone of the second fluid channel to the N-1th zone of the second fluid channel rises smoothly or stepwise.

Optionally, the number of turns of the second fluid channel is 1 turn or more than 1 turn.

Optionally, it further includes: a bottom plate located below the base.

Optionally, the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other.

Optionally, the air intake device includes a mounting substrate arranged below the insulating window of the vacuum reaction chamber and a gas shower head arranged below the mounting substrate; the plasma processing equipment further includes: a radio frequency power source connected to the base; The power source is set, and the bias power source is connected to the base.

Optionally, the side wall of the vacuum reaction chamber includes a second bearing surface; the plasma processing equipment further includes: an annular lining, the annular lining includes a side wall protection ring and a bearing ring that fixes the side wall protection ring on the second bearing surface; The insulating window on the vacuum reaction chamber; the inductive coupling coil on the insulating window; the radio frequency power source connected to the inductive coupling coil; the bias power source connected to the base.

Optionally, it further includes: a sealing groove located in the upper and lower surfaces of the heat conducting ring and a sealing gasket located in the sealing groove, so that the base and the electrostatic chuck are in a vacuum environment.

Optionally, it further includes: a measuring unit for measuring the dimension of the groove formed in the edge area of the wafer to be processed parallel to the surface of the wafer to be processed; when the measuring unit measures the groove along the edge parallel to the wafer to be processed When the size of the surface is larger than the target size, the temperature of the second fluid source is increased, and when the measurement unit measures the groove along the surface parallel to the wafer to be processed and the size is smaller than the target size, the temperature of the second fluid source is decreased.

Compared with the prior art, the present invention has the following beneficial effects:

In the radio frequency electrode assembly for plasma processing equipment provided by the present invention, a heat conduction ring is provided around the base, a second fluid channel is provided in the heat conduction ring, and the second fluid channel is connected to the second fluid source. Therefore, the The temperature of the two fluid sources is used to adjust the temperature of the heat transfer ring. The heat conduction ring and the focus ring can conduct heat conduction. Therefore, the temperature control of the focus ring can be achieved by adjusting the temperature of the second fluid source, and the temperature difference between the focus ring and the edge of the wafer to be processed can be adjusted. Adjusting the distribution of polymer at the edge of the wafer to be processed is beneficial to forming grooves that meet the technical requirements in the edge area of the wafer to be processed.

It further includes: a measuring unit for measuring the dimension of the groove formed in the edge area of the wafer to be processed along the surface parallel to the surface of the wafer to be processed; when the measuring unit measures the dimension of the groove parallel to the surface of the wafer to be processed When the size is larger than the target size, the temperature of the second fluid source is increased. When the size of the measuring unit measuring groove parallel to the surface of the wafer to be processed is smaller than the target size, the temperature of the second fluid source is reduced. The size of the groove formed in the edge region of the wafer to be processed along the direction parallel to the surface of the wafer to be processed is consistent with the target size.

Further, the second fluid channel includes N zones in sequence along the circumferential direction, where N is a natural number greater than or equal to 1, the first zone of the second fluid channel is connected to the fluid inlet, the Nth zone of the second fluid channel is connected to the fluid outlet, and the second The fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port. It takes a certain time for the second fluid source to flow through the second fluid channel, so that there is a temperature difference between the second fluid source of the fluid input port and the fluid output port. In order to reduce the temperature control capability difference of the second fluid source in the second fluid channel in different regions, the distance from the first zone of the second fluid channel to the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring is successively reduced. The distance from the top of the Nth zone of the fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1th zone of the second fluid channel to the bottom of the focus ring, which is beneficial to improve the uniformity of temperature in different regions of the focus ring.

In order to solve the problem in the background art that it is difficult for the existing plasma processing equipment to adjust the polymer distribution in the edge area of the wafer to be processed, the present invention provides a radio frequency electrode assembly for the plasma processing equipment and the plasma processing equipment. The radio frequency electrode assembly of the pulp processing equipment includes: a base in which a first fluid channel is provided, and the first fluid channel is connected to a first fluid source; an electrostatic chuck on the base; and a focus ring located on the periphery of the electrostatic chuck; The heat conduction ring is located around the base. The heat conduction ring surrounds part of the base. The heat conduction ring is located below the focus ring. A second fluid channel is provided in the heat conduction ring. The second fluid channel is connected to the second fluid source. Conduct heat conduction. The plasma processing equipment can adjust the polymer distribution in the edge area of the wafer to be processed.

In order to make the technical problems, technical solutions and technical effects solved by the present invention clearer and more complete, the specific embodiments of the present invention will be described in detail below in conjunction with the drawings.

Figure 1 is a schematic structural diagram of a plasma processing equipment including a radio frequency electrode assembly provided by an embodiment of the present invention.

Referring to Figure 1, the plasma processing equipment 21 includes: a vacuum reaction chamber 24; a susceptor 11 located at the bottom of the vacuum reaction chamber 24, the susceptor 11 is provided with first fluid channels A, B, C, and a first fluid channel A , B, C are connected to the first fluid source (not shown in the figure), the base 11 is located in the vacuum reaction chamber 24; the electrostatic chuck 12 is located on the base 11, the electrostatic chuck 12 is used to carry the wafer W to be processed The focusing ring 13 located on the periphery of the electrostatic chuck 12; the heat conducting ring 142 located around the base 11, the heat conducting ring 142 at least partially surrounds the base 11, the heat conducting ring 142 is located below the focusing ring 13, and the second heat conducting ring 142 is provided The fluid channel 15, the second fluid channel 15 is connected to the second fluid source (not shown in the figure), the heat conduction ring 142 and the focusing ring 13 can conduct heat conduction; the air inlet device 22 at the top of the vacuum reaction chamber 24, the air inlet device 22 is used to provide reaction gas into the vacuum reaction chamber 24.

In this embodiment, the plasma processing equipment 21 is a capacitively coupled plasma processing equipment (CCP), and the air inlet device 22 includes: a mounting substrate 221 arranged on the top of the vacuum reaction chamber 24 and a gas spray arranged below the mounting substrate 221头222. The gas shower head 222 serves as the upper electrode, the base 11 serves as the lower electrode, and the radio frequency power source is connected to the upper electrode or the lower electrode. The radio frequency signal generated by the radio frequency power source converts the reaction gas into plasma through the capacitance formed by the upper electrode and the lower electrode. The bias power source is connected to the base 11 so that the plasma moves evenly toward the surface of the base 11. The susceptor 11 is used to carry the wafer to be processed, therefore, it is advantageous for the plasma to move to the surface of the wafer W to be processed, and the wafer W to be processed is processed.

In other embodiments, the plasma processing equipment includes: inductively coupled plasma processing equipment (ICP); the side wall of the vacuum reaction chamber includes a second bearing surface, and the inductively coupled plasma processing equipment further includes: an annular lining, the annular lining includes a side wall The protective ring and the bearing ring that fixes the side wall protective ring on the second bearing surface; the insulating window on the vacuum reaction chamber; the inductor coil on the insulating window; the inductor coil is connected with the radio frequency power source, so that the reaction gas is converted into plasma The susceptor is connected with a bias power source, so that the plasma moves to the surface of the susceptor, which is beneficial for the plasma to process the wafer to be processed.

The focus ring 13 is located at the periphery of the electrostatic chuck 12, and the focus ring 13 can control the temperature, air flow, and electric field distribution at the edge of the wafer W to be processed, thereby controlling the processing effect on the edge of the wafer W to be processed.

As an example, since the wafer W to be processed is generally a silicon wafer, the material of the focus ring 13 includes silicon or silicon carbide. In this way, the contamination of the wafer W to be processed by the focus ring 13 can be reduced.

The electrostatic chuck 12 includes a first carrying surface D, the first carrying surface D is used to carry the wafer to be processed, the electrostatic chuck 12 is located on the base 11, and the base 11 is provided with first fluid channels A, B, C The first fluid channels A, B, and C are connected to the first fluid source. Therefore, the temperature of the wafer to be processed can be adjusted by adjusting the temperature of the first fluid source. However, it is difficult to adjust the temperature of the edge area of the wafer to be processed by the first fluid source. A second fluid channel 15 is provided inside the heat conducting ring 142, and the second fluid channel 15 is connected to a second fluid source. The temperature of the heat conduction ring 142 can be controlled by adjusting the temperature of the second fluid source, and heat conduction can be performed between the heat conduction ring 142 and the focus ring 13. Therefore, by adjusting the temperature of the second fluid source, the focus ring 13 can be controlled. Temperature control, the temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to the formation of the edge area of the wafer W to be processed to meet technical requirements Of the groove.

It further includes: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer W to be processed along the surface parallel to the wafer W to be processed; when the measuring unit measures the groove along the edge parallel to the wafer W to be processed When the size of the surface is larger than the target size, the temperature of the second fluid source is increased. When the size of the measurement unit measuring groove along the surface parallel to the wafer W to be processed is smaller than the target size, the temperature of the second fluid source is lowered. , It is advantageous for the dimension of the groove formed in the edge region of the wafer W to be processed along the direction parallel to the surface of the wafer W to be processed to be consistent with the target size.

In this embodiment, the first fluid source is a first cooling liquid, and the second fluid source is a second cooling liquid.

In this embodiment, the second fluid channel 15 includes N zones in sequence along the circumferential direction, where N is a natural number greater than or equal to 1, the first zone of the second fluid channel 15 is connected to the fluid inlet, and the second fluid channel 15 is the Nth zone. Connected to the fluid output port, the second fluid source enters the second fluid channel 15 from the fluid input port, and flows out of the second fluid channel 15 from the fluid output port.

In this embodiment, along the direction perpendicular to the first bearing surface D, the size of each zone of the second fluid channel 15 is equal, and the distance from the top of each zone of the second fluid channel 15 to the bottom of the focusing ring 13 is equal. The processing method of the second fluid passage includes: providing a first plate; forming a second fluid passage 15 in the first plate, and in a direction perpendicular to the first bearing surface D, the size of each zone of the second fluid passage 15 is equal ; Provide a second plate, so that the second plate and the first plate are welded together, and the second plate seals all the second fluid channels 15. Since the size of each zone of the second fluid channel 15 in the direction perpendicular to the first bearing surface D is equal, and the distance from the top of each zone of the second fluid channel 15 to the bottom of the focusing ring 13 is equal, the second fluid channel 15 is Both regions can be processed and formed at the same time, therefore, it is beneficial to reduce the complexity and difficulty of forming the second fluid channel 15.

In this embodiment, there is a gap between the thermally conductive ring 142 and the susceptor 11, so that the thermally conductive ring 142 has a small thermal impact on the susceptor 11. The susceptor 11 is used to carry the wafer to be processed. Process the temperature effect of the center area of the wafer W.

In other embodiments, the thermally conductive ring is in contact with the base.

In this embodiment, the width of the gap is greater than or equal to 0.5 mm, so that the thermal conductivity between the heat conducting ring 142 and the base 11 is reduced.

In other embodiments, the width of the gap is less than 0.5 mm.

In this embodiment, the gap is filled with an insulating material layer 16, and the insulating material layer 16 isolates the heat conduction ring 142 from the base 11 and has a relatively strong heat conduction ability, so that the heat conduction ring 142 has a greater thermal impact on the base 11. It is small, which is beneficial to further reduce the temperature influence of the center area of the wafer W to be processed.

The material of the heat-insulating material layer 16 includes: Teflon, polyetherimide, polyetheretherketone, or polyimide.

In this embodiment, it further includes a bottom plate 141, both ends of the bottom plate 141 are connected with the heat conduction ring 142, and the bottom plate 141 and the heat conduction ring 142 are integrally formed. The bottom plate 141 and the heat conducting ring 142 constitute the accessory plate 14.

In this embodiment, it further includes: a thermally conductive coupling ring 17 located between the focusing ring 13 and the thermally conductive ring 142. The thermally conductive coupling ring 17 can promote heat conduction between the thermally conductive ring 142 and the focusing ring 13, and the thermally conductive coupling ring 17 can quickly adjust the temperature of the focusing ring 13. As an example, the thermally conductive coupling ring 17 is generally made of a material with good thermal conductivity but electrical insulation. For example, the material of the thermally conductive coupling ring 17 includes alumina or quartz.

In other embodiments, the thermally conductive coupling ring is not included.

In this embodiment, it further includes: providing a thermally conductive structure (not shown in Figure 1) between the thermally conductive coupling ring 17 and the thermally conductive ring 142. The heat conduction structure is used to further improve the heat conduction capacity between the heat conduction ring 142 and the focus ring 13.

In other embodiments, no heat conducting structure is included.

In this embodiment, the radio frequency electrode assembly for plasma processing equipment may further include: a bottom ground ring 18, which surrounds the heat conduction ring 142, and the bottom ground ring 18 can lead the coupled radio frequency current in the vacuum reaction chamber to the ground .

In this embodiment, the radio frequency electrode assembly for plasma processing equipment may further include: an insulating ring 19 disposed between the bottom ground ring 18 and the heat conducting ring 142. Among them, the insulating ring 19 and the bottom grounding ring 18 surround the heat conducting ring 142. In order to be able to accommodate the heat conduction ring 142, the insulating ring 19 and the bottom grounding ring 18 are moved away from the base 11.

In this embodiment, the radio frequency electrode assembly used for plasma processing equipment further includes: an edge ring 110 arranged on the periphery of the focus ring 13. The edge ring 110 is used to converge the electromagnetic field distribution in the edge area of the vacuum reaction chamber 24.

In other embodiments, no edge ring is included.

In this embodiment, the plasma processing equipment includes a radio frequency electrode assembly for the plasma processing equipment, and the radio frequency electrode assembly for the plasma processing equipment includes a base 11 in which a first fluid channel A, B, C, the first fluid channels A, B, C are connected to the first fluid source; the electrostatic chuck 12 on the base 11, the electrostatic chuck 12 is used to carry the wafer to be processed; the focus located on the periphery of the electrostatic chuck 12 Ring 13; the heat conduction ring 142 located around the base 11, the heat conduction ring 142 surrounds part of the base 11, the heat conduction ring 142 is located below the focus ring 13, the heat conduction ring 13 is provided with a second fluid channel 15, the second fluid channel 15 is connected to the first Two fluid sources, the heat conduction ring 142 and the focusing ring 13 can conduct heat.

Figure 2 is a schematic structural diagram of another radio frequency electrode assembly used in plasma processing equipment according to an embodiment of the present invention.

The radio frequency electrode assembly of this embodiment is different from the radio frequency electrode assembly of the embodiment shown in Fig. 1 only in: the second fluid channel 15 from the first zone to the second fluid channel 15 from the top of the N-1 zone to the bottom of the focusing ring 13 The distance from the top of the second fluid channel 15 to the bottom of the focus ring 13 is greater than the distance from the top of the second fluid channel 15 to the bottom of the focus ring 13, meaning: the second fluid channel 15 The first zone is connected to the fluid inlet, the second fluid channel 15 and the Nth zone are connected to the fluid outlet. The second fluid source flows into the second fluid channel 15 from the fluid inlet, and after flowing through each zone of the second fluid channel 15, Flow out from the fluid outlet. It takes a certain time for the second fluid source to flow through the second fluid channel 15 so that there is a temperature difference between the fluid input port and the second fluid source of the fluid output port. In order to reduce the temperature control capability difference of the second fluid source in the second fluid channel 15 in different regions, the distance from the top of the second fluid channel 15 to the bottom of the focusing ring 13 from the first zone to the N-1th zone is sequentially reduced. However, because the fluid output port is close to the fluid input port, the second fluid source of the fluid input port affects the temperature of the second fluid source of the fluid output port, so that the second fluid source of the fluid input port is the same as the second fluid source of the fluid output port. The temperature difference of the fluid source should not be too large, so the distance from the top of the Nth zone to the bottom of the focusing ring 13 is greater than the distance from the top of the N-1 zone to the bottom of the focusing ring 13, which is beneficial to increase the temperature of different areas of the focusing ring 13 The uniformity.

In addition, although it is difficult to adjust the temperature of the edge region of the wafer W to be processed by using the first fluid source, the heat conduction ring 142 has a second fluid channel 15 and the second fluid source in the second fluid channel 15 can adjust the focus ring 13 Temperature, the temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to forming a groove that meets the technical requirements in the edge area of the wafer W to be processed. groove.

In this embodiment, along the direction perpendicular to the first bearing surface D, the size of each zone of the second fluid channel 15 is equal.

In other embodiments, along the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal, and the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focusing ring Decrease in order.

In this embodiment, the plasma processing equipment includes: a capacitively coupled plasma processing equipment (CCP) or an inductively coupled plasma processing equipment (ICP).

Figure 3 is a schematic structural diagram of another radio frequency electrode assembly for plasma processing equipment provided by an embodiment of the present invention.

The difference between this embodiment and the embodiment shown in Figure 2 is that in the direction perpendicular to the first bearing surface D, the dimensions of the first zone of the second fluid channel 20 to the N-1 zone of the second fluid channel 20 are sequentially Increasingly, the size of the N-th zone of the second fluid channel 20 is smaller than the size of the N-1 zone of the second fluid channel 20; this embodiment is similar to the embodiment shown in Figure 2 in that: the first zone of the second fluid channel 20 The distance from the top of the N-1 zone of the second fluid channel 20 to the bottom of the focusing ring 13 decreases successively, and the distance from the top of the N zone of the second fluid channel 20 to the bottom of the focusing ring 13 is greater than the distance from the N-1 zone of the second fluid channel 20 The distance from the top to the bottom of the focus ring 13. The meaning of the distance from the top of the second fluid channel 20 to the bottom of the focus ring 13 is the same as that of the embodiment in FIG. 2, and will not be repeated here.

Although it is difficult to adjust the temperature of the edge region of the wafer W to be processed by using the first fluid source, the heat conduction ring 142 has a second fluid channel 20, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focus ring 13. The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, the distance from the bottom of each zone of the second fluid channel 20 to the bottom of the focusing ring 13 is equal.

In this embodiment, the bottom plate 21 and the heat conducting ring 142 are separated from each other. Since the bottom plate 21 is located at the bottom of the susceptor 11, and the heat conduction ring 142 and the bottom plate 21 are separated from each other, the influence between the heat conduction ring 142 and the susceptor 11 is small, which is beneficial to reduce the heat conduction ring 142 in the central area of the wafer to be processed The temperature effect.

In other embodiments, the bottom plate 21 and the heat conducting ring 142 are connected to each other.

In this embodiment, it further includes: a heat insulation layer (not shown in the figure) is arranged between the bottom plate 21 and the heat conduction ring 142, and the heat insulation layer is used to isolate the bottom plate 21 and the heat conduction ring 142. The heat insulation layer is used to further reduce the heat conduction between the heat conduction ring 142 and the bottom plate 21, which is beneficial to further reduce the temperature influence of the heat conduction ring 142 in the central area of the wafer to be processed.

In other embodiments, no heat insulation layer is formed.

In this embodiment, the plasma processing equipment includes: a capacitively coupled plasma processing equipment (CCP) or an inductively coupled plasma processing equipment (ICP).

For a detailed description of the heat conduction ring 142, please refer to Fig. 4.

Figure 4 is a schematic structural diagram of a heat conduction ring provided by an embodiment of the present invention.

In this embodiment, the heat conduction ring 142 includes a first ring portion 142a located between the base 11 (see Figure 3) and the insulating ring 19 (see Figure 3) and a flat plate extending from the first ring portion 142a to a part of the bottom The second ring portion 142b below 21 (see Figure 3) makes the heat conducting ring 142 easy to install.

In other embodiments, the thermally conductive ring is only the first ring portion.

In this embodiment, the top of the first zone of the second fluid channel 20 to the N-1 zone of the second fluid channel 20 rises sequentially, and the distance from the top of the Nth zone of the second fluid channel 20 to the bottom of the focusing ring is greater than that of the second fluid channel 20 The distance from the top of the N-1 zone to the bottom of the focusing ring. This is because the first zone of the second fluid channel 20 is connected to the fluid inlet, and the second fluid channel 20 is connected to the fluid outlet, that is, the second fluid channel. 20 The Nth zone is close to the first zone of the second fluid channel 20, and the second fluid source in the first zone of the second fluid channel 20 has a lower temperature. The second fluid source in the first zone will affect the second fluid source in the Nth zone The temperature of the second fluid source in the N-th zone is not too high, so that the second fluid source in the N-th zone has a strong ability to control the temperature of the focusing ring 13, so that the top of the second fluid channel 20 in the N-th zone is The distance between the bottom of the focus ring need not be too small.

In this embodiment, the second fluid channel 20 is a circle.

The morphology of the second fluid channel 20 in Figure 4 will be described in detail below. For details, please refer to Figures 5 to 7.

FIG. 5 is a schematic structural diagram of a second fluid channel in a heat conduction ring drawn as a solid according to an embodiment of the present invention.

The second fluid channel 20 includes N regions in the circumferential direction Y, and N is a natural number greater than or equal to 1.

In this embodiment, the second fluid channel 20 includes 7 zones as an example. The top of the second fluid channel 20 from the first zone C1 to the second fluid channel 20 to the sixth zone C6 rises stepwise, and the second fluid channel The distance from the top of the seventh zone C7 to the bottom of the focus ring 13 is greater than the distance from the top of the sixth zone C6 of the second fluid channel 20 to the bottom of the focus ring. The meaning of the depth setting of the 7 zones of the second fluid channel 20 is the same as the meaning of the depth setting of the N zones of the second fluid channel in the embodiment of FIG. 4, and will not be repeated here.

The first zone C1 of the second fluid channel 20 is connected to the fluid input port 20a, and the Nth zone of the second fluid channel 20 is connected to the fluid output port 20b.

Although it is difficult to adjust the temperature of the edge region of the wafer to be processed by using the first fluid source, the heat conduction ring 142 has a second fluid channel 20, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focus ring 13. The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, two adjacent areas are connected by a connecting area E, which has an angle between the connecting area E and the horizontal plane, and the first area C1, the second area C2, the third area C3, and the fourth area C4 The tops of the fifth zone C5, the sixth zone C6 and the seventh zone C7 are parallel to the horizontal plane. The design of the second fluid channel 30 in this way is beneficial to reduce the difficulty of processing the second fluid channel 30.

In other embodiments, there is an angle between the top of the second fluid channel partial area and the horizontal plane.

In this embodiment, the second fluid channel 30 is a circle.

Fig. 6 is a schematic structural diagram of another heat conduction ring drawn as a solid body according to an embodiment of the present invention.

The difference between this embodiment and the embodiment in Fig. 5 is that the top of the first zone C1 of the second fluid channel 30 to the sixth zone C6 of the second fluid channel rises smoothly, so that the second fluid source is in the second fluid channel 30 The flow is smoother.

The first zone C1 of the second fluid channel 30 is connected to the fluid input port 30a, and the Nth zone of the second fluid channel 30 is connected to the fluid output port 30b.

Although it is difficult to adjust the temperature of the edge region of the wafer to be processed by using the first fluid source, the heat conduction ring 142 has a second fluid channel 30, and the second fluid source in the second fluid channel 30 can adjust the temperature of the focus ring 13. The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In this embodiment, the second fluid channel 30 is a circle.

FIG. 7 is a schematic structural diagram in which the second fluid channel in the heat conduction ring is drawn as a solid according to another embodiment of the present invention.

In this embodiment, the second fluid channel 40 has two turns, so that the contact area between the second fluid channel 40 and the focus ring 13 is larger, and the second fluid channel 40 has a stronger temperature control ability on the focus ring 13.

In this embodiment, there is a fluid input port 40a and a fluid output port 40b.

Although it is difficult to adjust the temperature of the edge area of the wafer to be processed by using the first fluid source, the heat conduction ring 142 has a second fluid channel 40, and the second fluid source in the second fluid channel 40 can adjust the temperature of the focus ring 13. The temperature difference between the focus ring 13 and the edge of the wafer W to be processed can be adjusted. Therefore, the polymer distribution at the edge of the wafer W to be processed can be adjusted, which is beneficial to forming grooves meeting technical requirements in the edge area of the wafer W to be processed.

In other embodiments, the number of turns of the second fluid channel is greater than two.

Although the present invention is disclosed as above, the present invention is not limited thereto. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope of the patent application.

11: Pedestal 110: Edge ring 12: Electrostatic chuck 13: Focus ring 14: accessory plate 141: bottom plate 142: Heat conduction ring 142a: The first ring 142b: The second ring 15: Second fluid channel 16: insulation material layer 17: Thermally conductive coupling ring 18: Bottom ground ring 19: Insulating ring 20: Second fluid channel 20a: fluid inlet 20b: fluid outlet 21: Plasma processing equipment 22: intake device 221: mounting base 222: Gas sprinkler 24: Vacuum reaction chamber 30: Second fluid channel 30a, 40a: fluid inlet 30b, 40b: fluid outlet 40: Second fluid channel A, B, C: first fluid channel C1: District 1 C2: District 2 C3: District 3 C4: District 4 C5: District 5 C6: District 6 C7: District 7 D: The first bearing surface E: Connection area W: wafer to be processed Y: Zhou Xiang

Figure 1 is a schematic structural diagram of a plasma processing equipment including a radio frequency electrode assembly provided by an embodiment of the present invention;

Figure 2 is a schematic structural diagram of another radio frequency electrode assembly for plasma processing equipment according to an embodiment of the present invention;

Figure 3 is a schematic structural diagram of yet another radio frequency electrode assembly for plasma processing equipment according to an embodiment of the present invention;

Figure 4 is a schematic structural diagram of a heat conduction ring provided by an embodiment of the present invention;

Figure 5 is a schematic structural diagram of a second fluid channel in a heat conduction ring drawn as a solid according to an embodiment of the present invention;

Figure 6 is a schematic structural diagram of another heat conduction ring drawn as a solid body according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram in which the second fluid channel in the heat conduction ring is drawn as a solid according to another embodiment of the present invention.

11: Pedestal

110: Edge ring

12: Electrostatic clamp ring

13: Focus ring

14: accessory plate

141: bottom plate

142: Heat conduction ring

15: Second fluid channel

16: insulation material layer

17: Thermally conductive coupling ring

18: Bottom ground ring

19: Insulating ring

21: Plasma processing equipment

22: intake device

221: mounting base

222: Gas sprinkler

24: Vacuum reaction chamber

A, B, C: first fluid channel

W: wafer to be processed

Claims (32)

A radio frequency electrode assembly for plasma processing equipment, which includes: A base in which a first fluid channel is arranged, and the first fluid channel is connected to a first fluid source; An electrostatic chuck is located on the base, and a wafer to be processed is placed on the electrostatic chuck; A focusing ring located on the periphery of the electrostatic chuck; A heat conduction ring is located around the base, the heat conduction ring is located below the focus ring, and the heat conduction ring at least partially surrounds the base, a second fluid channel is provided in the heat conduction ring, and the second fluid channel is connected to a second fluid channel. Fluid source, heat conduction can be performed between the heat conduction ring and the focus ring. The radio frequency electrode assembly according to claim 1, wherein there is a gap between the heat conducting ring and the base. The radio frequency electrode assembly according to claim 2, wherein the width of the gap is greater than or equal to 0.5 mm. The radio frequency electrode assembly according to claim 2, wherein the gap is filled with an insulating material layer; the material of the insulating material layer includes: Teflon or polyether imide or polyether ether ketone or polyimide . The radio frequency electrode assembly according to any one of claims 1 to 4, further comprising: a thermally conductive coupling ring located between the focus ring and the thermally conductive ring; and a thermally conductive coupling ring located between the thermally conductive coupling ring and the thermally conductive ring Structure; a bottom grounding ring surrounding the heat conduction ring; an insulating ring located between the bottom grounding ring and the heat conduction ring, the insulating ring surrounding the heat conduction ring. The radio frequency electrode assembly according to claim 5, wherein the material of the thermally conductive coupling ring includes: alumina or quartz. The radio frequency electrode assembly according to claim 1, further comprising: a bottom plate located under the base. The radio frequency electrode assembly according to claim 7, wherein the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other. The radio frequency electrode assembly according to claim 1, wherein the second fluid channel includes N regions in the circumferential direction, and N is a natural number greater than or equal to 1, and a first region of the second fluid channel is connected to a fluid inlet , The Nth zone of the second fluid channel is connected to a fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes A first bearing surface, the first bearing surface is used for bearing the wafer to be processed. The radio frequency electrode assembly according to claim 9, wherein in the direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the top of each zone of the second fluid channel to the bottom of the focusing ring The distances are equal. The radio frequency electrode assembly according to claim 9, wherein in a direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the second fluid channel from the first zone to the second fluid The distance from the top of the Nth zone of the channel to the bottom of the focus ring decreases in order. The radio frequency electrode assembly according to claim 9, wherein in a direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the second fluid channel from the first zone to the second fluid The distance from the top of the N-1th zone of the channel to the bottom of the focusing ring decreases successively, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than the top of the N-1th zone of the second fluid channel to the focusing ring The distance to the bottom. The radio frequency electrode assembly according to claim 9, wherein in a direction perpendicular to the first bearing surface, the sizes of the first zone of the second fluid channel to the Nth zone of the second fluid channel increase in order; the second The distance from the first zone of the fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first zone of the second fluid channel to the top of the Nth zone of the second fluid channel to the bottom of the focusing ring The distance decreases sequentially. The radio frequency electrode assembly according to claim 10, wherein in a direction perpendicular to the first bearing surface, the size of the first zone of the second fluid channel to the N-1th zone of the second fluid channel increases sequentially, the The size of the Nth zone of the second fluid channel is smaller than the size of the N-1th zone of the second fluid channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring is equal The distance from the top of the first zone of the second fluid channel to the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring decreases sequentially, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than The distance from the top of the N-1th zone of the second fluid channel to the bottom of the focusing ring. The radio frequency electrode assembly according to claim 11 or 12 or 13 or 14, wherein the top of the first zone of the second fluid channel to the N-1 zone of the second fluid channel rises smoothly or stepwise. The radio frequency electrode assembly according to claim 1, wherein the number of turns of the second fluid passage is one or more than one. The radio frequency electrode assembly according to claim 1, further comprising: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer to be processed along the surface parallel to the surface of the wafer to be processed; When the dimension of the measuring unit measuring groove parallel to the surface of the wafer to be processed is greater than the target dimension, the temperature of the second fluid source is increased, when the measuring unit measuring groove is parallel to the surface of the wafer to be processed When the size of is smaller than the target size, the temperature of the second fluid source is reduced. A plasma processing equipment, which includes: A vacuum reaction chamber; A base located downstream of the vacuum reaction chamber, a first fluid channel is arranged in the base, and the first fluid channel is connected to a first fluid source; An electrostatic chuck is located on the base, and a wafer to be processed is placed on the electrostatic chuck; A focusing ring located on the periphery of the electrostatic chuck; A heat conduction ring is located around the base, the heat conduction ring is located below the focus ring, and the heat conduction ring at least partially surrounds the base, a second fluid channel is provided in the heat conduction ring, and the second fluid channel is connected to a first Two fluid sources, which can conduct heat transfer between the heat conduction ring and the focus ring; An air inlet device located at the top of the vacuum reaction chamber, and the air inlet device is used to provide reaction gas into the vacuum reaction chamber. The plasma processing device according to claim 18, wherein the second fluid channel includes N regions in the circumferential direction, and N is a natural number greater than or equal to 1, and a first region channel of the second fluid channel is connected to a fluid An input port, the Nth zone of the second fluid channel is connected to a fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic clamp The tray includes a first supporting surface, and the first supporting surface is used for supporting the wafer to be processed. The plasma processing equipment according to claim 19, wherein in a direction perpendicular to the first bearing surface, the size of each zone of the second fluid channel is equal; the top of each zone of the second fluid channel reaches the focusing ring The bottom distances are all equal. The plasma processing equipment according to claim 19, wherein in a direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the second fluid channel from the first zone to the second The distance from the top of the Nth zone of the fluid channel to the bottom of the focusing ring decreases in order. The plasma processing equipment according to claim 19, wherein in a direction perpendicular to the first bearing surface, each zone of the second fluid channel has the same size, and the second fluid channel from the first zone to the second The distance from the top of the N-1th zone of the fluid channel to the bottom of the focusing ring decreases sequentially, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than the top of the N-1th zone of the second fluid channel to the focus The distance from the bottom of the ring. The plasma processing equipment according to claim 19, wherein in a direction perpendicular to the first bearing surface, the sizes of the first zone of the second fluid channel to the Nth zone of the second fluid channel increase in order; The distance from the first zone to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring is equal; the second fluid channel from the first zone to the top of the Nth zone of the second fluid channel to the bottom of the focusing ring The distance decreases in turn. The plasma processing equipment according to claim 19, wherein in a direction perpendicular to the first bearing surface, the sizes of the first zone of the second fluid channel to the N-1th zone of the second fluid channel increase in order, The size of the Nth zone of the second fluid channel is smaller than the size of the N-1th zone of the second fluid channel; the distance from the first zone of the second fluid channel to the bottom of the Nth zone of the second fluid channel to the bottom of the focusing ring Equal; the distance from the first zone of the second fluid channel to the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring decreases sequentially, and the distance from the top of the Nth zone of the second fluid channel to the bottom of the focusing ring is greater than The distance from the top of the N-1th zone of the second fluid channel to the bottom of the focusing ring. The plasma processing equipment according to claim 21 or 22 or 23 or 24, wherein the top of the first zone of the second fluid channel to the N-1 zone of the second fluid channel rises smoothly or stepwise. The plasma processing equipment according to claim 18, wherein the number of turns of the second fluid passage is 1 or more than 1 turn. The plasma processing equipment according to claim 18, further comprising: a bottom plate located below the base. The plasma processing equipment according to claim 27, wherein the bottom plate and the heat conduction ring are connected to each other; or, the bottom plate and the heat conduction ring are separated from each other. The plasma processing equipment according to claim 18, wherein the air inlet device includes a mounting substrate disposed on the top of the vacuum reaction chamber and a gas shower head disposed below the mounting substrate; the plasma processing equipment further includes : A radio frequency power source connected to the base; a bias power source connected to the base. The plasma processing equipment according to claim 18, wherein the side wall of the vacuum reaction chamber includes a second bearing surface; the plasma processing equipment further includes: an annular lining, the annular lining includes a side wall protection ring and the The side wall protection ring is fixed on the carrying ring on the second carrying surface; an insulating window located on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; an RF power source connected to the inductive coupling coil; Bias power source for the base. The plasma processing equipment according to claim 18, further comprising: a sealing groove located in the upper and lower surfaces of the heat conducting ring and a sealing gasket located in the sealing groove, so that the base and the electrostatic chuck are in a vacuum environment. The plasma processing equipment according to claim 18, further comprising: a measuring unit for measuring the dimension of the groove formed in the edge region of the wafer to be processed along the surface parallel to the surface of the wafer to be processed When the measurement unit measuring groove along the surface parallel to the wafer to be processed is greater than the target size, the temperature of the second fluid source is increased, when the measuring unit measures the groove along parallel to the wafer to be processed When the size of the surface is smaller than the target size, the temperature of the second fluid source is reduced.

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