CN111326390B - Radio frequency electrode assembly and plasma processing apparatus - Google Patents

Radio frequency electrode assembly and plasma processing apparatus Download PDF

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Publication number
CN111326390B
CN111326390B CN201910600861.6A CN201910600861A CN111326390B CN 111326390 B CN111326390 B CN 111326390B CN 201910600861 A CN201910600861 A CN 201910600861A CN 111326390 B CN111326390 B CN 111326390B
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ring
fluid channel
fluid
region
thermally conductive
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CN111326390A (en
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陈龙保
梁洁
王伟娜
涂乐义
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to TW108145949A priority Critical patent/TWI809233B/en
Priority to KR1020190168603A priority patent/KR102244438B1/en
Priority to US16/718,056 priority patent/US11875970B2/en
Publication of CN111326390A publication Critical patent/CN111326390A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A radio frequency electrode assembly for a plasma processing apparatus and a plasma processing apparatus, wherein the radio frequency electrode assembly for a plasma processing apparatus comprises: the base is internally provided with a first fluid channel which is connected with a first fluid source; an electrostatic chuck located on the base; a focus ring located at the periphery of the electrostatic chuck; and the heat conduction ring is positioned around the base and at least partially surrounds the base, the heat conduction ring is positioned below the focusing ring, a second fluid channel is arranged in the heat conduction ring and is connected with a second fluid source, and heat conduction can be carried out between the heat conduction ring and the focusing ring. The plasma processing apparatus is capable of adjusting the distribution of polymer in the edge region of a substrate to be processed.

Description

Radio frequency electrode assembly and plasma processing apparatus
The present application claims priority from chinese patent office, application number 201811543565.9, chinese patent application entitled "rf electrode assembly, plasma processing apparatus," filed on date 17 of 12 of 2018, the entire contents of which are incorporated herein by reference.
Technical Field
The present application relates to the field of semiconductor devices, and more particularly, to a radio frequency electrode assembly for a plasma processing apparatus and a plasma processing apparatus.
Background
In the field of semiconductor manufacturing technology, it is often necessary to perform plasma treatment on a substrate to be treated. The process of performing plasma treatment on the substrate to be treated needs to be performed in a plasma treatment apparatus.
The plasma processing apparatus includes a vacuum reaction chamber in which a susceptor for carrying a substrate to be processed is disposed, and generally includes a pedestal and an electrostatic chuck disposed above the pedestal for fixing the substrate.
However, it is difficult for existing plasma processing apparatuses to adjust the polymer distribution in the edge region of the substrate to be processed.
Disclosure of Invention
In view of this, the present invention provides a radio frequency electrode assembly for a plasma processing apparatus and a plasma processing apparatus capable of adjusting the polymer distribution in the edge region of a substrate to be processed.
In order to solve the above technical problems, the present invention provides a radio frequency electrode assembly for a plasma processing apparatus, comprising: the device comprises a base, wherein a first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck on the base for placing a substrate to be processed thereon; a focus ring located at a periphery of the electrostatic chuck; the heat conduction ring is positioned around the base and at least partially surrounds the base, the heat conduction ring is positioned below the focusing ring, a second fluid channel is arranged in the heat conduction ring and is connected with a second fluid source, and heat conduction can be conducted between the heat conduction ring and the focusing ring.
Optionally, a gap is provided between the thermally conductive ring and the base.
Optionally, the width of the gap is greater than or equal to 0.5 millimeters.
Optionally, the gap is filled with a heat insulation material layer; the material of the heat insulation material layer comprises: teflon or polyetherimide or polyetheretherketone or polyimide.
Optionally, the method further comprises: a thermally conductive coupling ring between the focus ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the thermally conductive ring; an insulating ring between the bottom ground ring and the thermally conductive ring, the insulating ring surrounding the thermally conductive ring.
Optionally, the material of the thermally conductive coupling ring includes: alumina or quartz.
Optionally, the method further comprises: a bottom plate positioned below the base.
Optionally, the bottom plate and the heat conducting ring are connected to each other, or the bottom plate and the heat conducting ring are separated from each other.
Optionally, the second fluid channel sequentially includes N regions along the circumferential direction, N is a natural number greater than or equal to 1, a first region of the second fluid channel is connected to the fluid input port, an nth region of the second fluid channel is connected to the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first bearing surface for bearing a substrate to be processed.
Optionally, the dimensions of each region of the second fluid channel are equal in a direction perpendicular to said first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
Optionally, in a direction perpendicular to the first bearing surface, each region of the second fluid channel is equal in size, and distances from the top of the first region of the second fluid channel to the top of the nth region of the second fluid channel to the bottom of the focusing ring sequentially decrease.
Optionally, in a direction perpendicular to the first bearing surface, each area of the second fluid channel is equal in size, and distances from the first area of the second fluid channel to the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring are sequentially reduced, and distances from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring are larger than distances from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring.
Optionally, the dimensions of the first region of the second fluid channel to the nth region of the second fluid channel increase in sequence along a direction perpendicular to the first bearing surface; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the first region of the second fluid channel to the top of the nth region of the second fluid channel to the bottom of the focusing ring decreases in sequence.
Optionally, the dimensions of the first region to the N-1 region of the second fluid channel increase in sequence along a direction perpendicular to the first bearing surface, and the dimension of the N-1 region of the second fluid channel is smaller than the dimension of the N-1 region of the second fluid channel; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring is sequentially reduced, and the distance from the top of the N zone of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.
Optionally, the tops of the first region and the N-1 region of the second fluid channel rise smoothly or step-wise.
Optionally, the number of turns of the second fluid channel is 1 turn or more than 1 turn.
Optionally, the method further comprises: the measuring unit is used for measuring the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is larger than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is smaller than the target dimension.
Correspondingly, the invention also provides plasma processing equipment comprising: a vacuum reaction chamber; a base positioned at the downstream of the vacuum reaction cavity, wherein a first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck on the base for placing a substrate to be processed thereon; a focus ring located at a periphery of the electrostatic chuck; a heat conducting ring positioned around the base, the heat conducting ring being positioned below the focusing ring and at least partially surrounding the base, a second fluid channel being provided within the heat conducting ring, the second fluid channel being connected to a second fluid source, the heat conducting ring being capable of conducting heat between the focusing ring and the heat conducting ring; and the air inlet device is positioned at the top of the vacuum reaction cavity and is used for providing reaction gas for the vacuum reaction cavity.
Optionally, the second fluid channel sequentially comprises N zones along the circumferential direction, N is a natural number greater than or equal to 1, a first zone channel of the second fluid is connected with the fluid input port, an nth zone of the second fluid channel is connected with the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck includes a first bearing surface for bearing a substrate to be processed.
Optionally, the dimensions of each region of the second fluid channel are equal in a direction perpendicular to said first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
Optionally, in a direction perpendicular to the first bearing surface, each region of the second fluid channel is equal in size, and distances from the top of the first region of the second fluid channel to the top of the nth region of the second fluid channel to the bottom of the focusing ring sequentially decrease.
Optionally, in a direction perpendicular to the first bearing surface, each area of the second fluid channel is equal in size, and distances from the first area of the second fluid channel to the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring are sequentially reduced, and distances from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring are larger than distances from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring.
Optionally, the dimensions of the first region of the second fluid channel to the nth region of the second fluid channel increase in sequence along a direction perpendicular to the first bearing surface; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the first region of the second fluid channel to the top of the nth region of the second fluid channel to the bottom of the focusing ring decreases in sequence.
Optionally, the dimensions of the first region to the N-1 region of the second fluid channel increase in sequence along a direction perpendicular to the first bearing surface, and the dimension of the N-1 region of the second fluid channel is smaller than the dimension of the N-1 region of the second fluid channel; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring is sequentially reduced, and the distance from the top of the N zone of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.
Optionally, the tops of the first region and the N-1 region of the second fluid channel rise smoothly or step-wise.
Optionally, the number of turns of the second fluid channel is 1 turn or more than 1 turn.
Optionally, the method further comprises: a bottom plate positioned below the base.
Optionally, the bottom plate is interconnected with a thermally conductive ring; alternatively, the bottom plate and the thermally conductive ring are separated from each other.
Optionally, the air inlet device comprises a mounting substrate arranged below the vacuum reaction cavity insulating window and a gas spray header arranged below the mounting substrate; the plasma processing apparatus further includes: the radio frequency power source is connected with the base; and the bias power source is connected with the base.
Optionally, the side wall of the vacuum reaction chamber comprises a second bearing surface; the plasma processing apparatus further includes: an annular liner comprising a sidewall protection ring and a load ring securing the sidewall protection ring to the second load surface; an insulating window located on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; a radio frequency power source connected to the inductive coupling coil; a bias power source is coupled to the base.
Optionally, the method further comprises: a seal groove in the upper and lower surfaces of the thermally conductive ring and a seal gasket in the seal groove, the base and the electrostatic chuck being in a vacuum environment.
Optionally, the method further comprises: the measuring unit is used for measuring the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is larger than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is smaller than the target dimension.
Compared with the prior art, the invention has the following beneficial effects:
in the radio frequency electrode assembly for the plasma processing equipment, the heat conduction ring is arranged around the base, the second fluid channel is arranged in the heat conduction ring and is connected with the second fluid source, and therefore the temperature of the heat conduction ring can be adjusted by adjusting the temperature of the second fluid source. And the heat conduction can be carried out between the heat conduction ring and the focusing ring, so that the temperature control of the focusing ring can be realized by adjusting the temperature of the second fluid source, and the temperature difference between the focusing ring and the edge of the substrate to be processed is adjustable, so that the distribution of the polymer at the edge of the substrate to be processed can be adjusted, and the formation of grooves meeting the process requirements in the edge area of the substrate to be processed is facilitated.
Further, the method further comprises the following steps: the measuring unit is used for measuring the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is larger than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is smaller than the target dimension, so that the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed is consistent with the target dimension.
Further, the second fluid channel sequentially comprises N areas along the circumferential direction, N is a natural number greater than or equal to 1, the first area of the second fluid channel is connected with the fluid input port, the nth area of the second fluid channel is connected with the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port. The second fluid source may take a time to flow through the second fluid channel such that there is a temperature differential between the second fluid source at the fluid input port and the fluid output port. In order to reduce the difference of the temperature control capability of the second fluid source in the second fluid channel in different areas, the distances from the top of the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focusing ring are sequentially reduced, and the distance from the top of the N area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring, so that the uniformity of the temperatures of the different areas of the focusing ring is improved.
Drawings
Fig. 1 is a schematic view showing a structure of a plasma processing apparatus including a rf electrode assembly according to an embodiment of the present invention;
fig. 2 is a schematic structural view of another rf electrode assembly for a plasma processing apparatus according to an embodiment of the present invention;
Fig. 3 is a schematic structural view of a radio frequency electrode assembly for a plasma processing apparatus according to still another embodiment of the present invention;
FIG. 4 is a schematic view of a heat conducting ring according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second fluid passage in a heat conducting ring according to an embodiment of the present invention;
FIG. 6 is a schematic illustration of a second fluid passage in a heat conducting ring according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a second fluid channel in a heat conduction ring according to another embodiment of the present invention.
Detailed Description
In order to solve the problem that the conventional plasma processing apparatus has difficulty in adjusting the polymer distribution at the edge region of a substrate to be processed in the background art, the present invention provides a radio frequency electrode assembly for a plasma processing apparatus and a plasma processing apparatus, wherein the radio frequency electrode assembly for a plasma processing apparatus comprises: the device comprises a base, wherein a first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck located on the base; a focus ring located at a periphery of the electrostatic chuck; the heat conduction ring is arranged around the base, surrounds part of the base, is arranged below the focusing ring, and is internally provided with a second fluid channel which is connected with a second fluid source, and heat conduction can be carried out between the heat conduction ring and the focusing ring. The plasma processing apparatus is capable of adjusting the distribution of polymer in the edge region of a substrate to be processed.
In order to make the technical problems solved by the invention more clear and complete, the technical scheme and the technical effects are more fully described in the following detailed description of the specific embodiments of the invention with reference to the accompanying drawings.
Fig. 1 is a schematic structural view of a plasma processing apparatus including a rf electrode assembly according to an embodiment of the present invention.
Referring to fig. 1, the plasma processing apparatus 21 includes: a vacuum reaction chamber 24; a base 11 located at the bottom of the vacuum reaction chamber 24, a first fluid channel A, B, C is disposed in the base 11, the first fluid channel A, B, C is connected to a first fluid source (not shown), and the base 11 is located in the vacuum reaction chamber 24; an electrostatic chuck 12 on the base 11, the electrostatic chuck 12 for carrying a substrate W to be processed; a focus ring 13 located at the periphery of the electrostatic chuck 12; a heat conducting ring 142 located around the base 11, the heat conducting ring 142 at least partially surrounding the base 11, the heat conducting ring 142 being located below the focusing ring 13, a second fluid channel 15 being provided in the heat conducting ring 142, the second fluid channel 15 being connected to a second fluid source (not shown), the heat conducting ring 142 being capable of conducting heat between the focusing ring 13 and the heat conducting ring; and the air inlet device 22 is positioned at the top of the vacuum reaction cavity 24, and the air inlet device 22 is used for providing reaction gas into the vacuum reaction cavity 24.
In the present embodiment, the plasma processing apparatus 21 is a capacitively-coupled plasma processing apparatus (CCP), and the air inlet device 22 includes: a mounting substrate 221 disposed on top of the vacuum reaction chamber 24, and a gas shower head 222 disposed below the mounting substrate 221. The gas shower head 222 is used as an upper electrode, the base 11 is used as a lower electrode, and the radio frequency power source is connected with the upper electrode or the lower electrode. The radio frequency signal generated by the radio frequency power source converts the reaction gas into plasma through a capacitor formed by the upper electrode and the lower electrode. The bias power source is connected to the susceptor 11 so that the plasma is uniform to the surface of the susceptor 11. The susceptor 11 is used for carrying a substrate to be processed, and thus, facilitates movement of the plasma toward the surface of the substrate W to be processed, and processes the substrate W to be processed.
In other embodiments, the plasma processing apparatus includes: inductively coupled plasma processing apparatus (ICP); the vacuum reaction chamber side wall comprises a second bearing surface, and the inductively coupled plasma processing apparatus further comprises: an annular liner comprising a sidewall protection ring and a load ring securing the sidewall protection ring to the second load surface; an insulating window located on the vacuum reaction chamber; an inductor coil located on the insulating window; the induction coil is connected with a radio frequency power source so that the reaction gas is converted into plasma, and the base is connected with a bias power source so that the plasma moves towards the surface of the base, thereby being beneficial to the plasma to process the substrate to be processed.
The focusing ring 13 is located at the periphery of the electrostatic chuck 12, and the focusing ring 13 can control the temperature, air flow and electric field distribution of the edge of the substrate W to be processed, thereby controlling the processing effect of the edge of the substrate W to be processed.
As an example, since the substrate W to be processed is typically a silicon substrate, the material of the focus ring 13 includes silicon or silicon carbide, and thus contamination of the focus ring 13 to the substrate W to be processed can be reduced.
The electrostatic chuck 12 includes a first bearing surface D for bearing a substrate to be processed, the electrostatic chuck 12 is disposed on the base 11, and a first fluid channel A, B, C is disposed in the base 11, and the first fluid channel A, B, C is connected to a first fluid source, so that the temperature of the substrate to be processed can be adjusted by adjusting the temperature of the first fluid source. However, it is difficult to adjust the temperature of the edge region of the substrate to be processed by the first liquid source. The thermally conductive ring 142 has a second fluid passage 15 disposed therein, the second fluid passage 15 being connected to a second fluid source. The temperature of the heat conduction ring 142 can be controlled by adjusting the temperature of the second fluid source, and heat conduction can be performed between the heat conduction ring 142 and the focusing ring 13, so that the temperature of the focusing ring 13 can be controlled by adjusting the temperature of the second fluid source, and the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed can be adjusted, so that the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, and a groove meeting the process requirements can be formed in the edge area of the substrate W to be processed.
Further comprises: a measuring unit for measuring the dimension of the groove formed in the edge region of the substrate W to be processed along a direction parallel to the surface of the substrate W to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate W to be processed is greater than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate W to be processed is smaller than the target dimension, thereby facilitating the dimension of the groove formed in the edge region of the substrate W to be processed along the direction parallel to the surface of the substrate W to be processed to coincide with the target dimension.
In this embodiment, the first fluid source is a first cooling fluid, and the second fluid source is a second cooling fluid.
In this embodiment, the second fluid channel 15 includes N regions sequentially along the circumferential direction, where N is a natural number greater than or equal to 1, a first region of the second fluid channel 15 is connected to the fluid input port, an nth region of the second fluid channel 15 is connected to the fluid output port, and the second fluid source enters the second fluid channel 15 from the fluid input port and flows out of the second fluid channel 15 from the fluid output port.
In this embodiment, the dimensions of each region of the second fluid channel 15 are equal in a direction perpendicular to the first bearing surface D, and the distance from the top of each region of the second fluid channel 15 to the bottom of the focus ring 13 is equal. The processing method of the second fluid channel comprises the following steps of; providing a first plate; forming a second fluid channel 15 in the first sheet material, and in a direction perpendicular to the first bearing surface D, each area of the second fluid channel 15 being equal in size; a second sheet is provided which is welded to the first sheet and seals all of the second fluid passages 15. Since the dimensions of each region of the second fluid channel 15 in the direction perpendicular to the first bearing surface D are equal, and the distances from the top of each region of the second fluid channel 15 to the bottom of the focusing ring 13 are equal, each region of the second fluid channel 15 can be formed by simultaneous processing, which is beneficial to reducing the complexity and difficulty of forming the second fluid channel 15.
In this embodiment, a gap exists between the heat conduction ring 142 and the susceptor 11, so that the heat conduction ring 142 has a smaller thermal influence on the susceptor 11, and the susceptor 11 is used for carrying the substrate to be processed, thereby being beneficial to reducing the temperature influence of the central region of the substrate W to be processed.
In other embodiments, the thermally conductive ring is in contact with the base.
In this embodiment, the gap has a width greater than or equal to 0.5 mm, thus reducing the thermal conductivity between the thermally conductive ring 142 and the susceptor 11.
In other embodiments, the gap has a width of less than 0.5 millimeters.
In this embodiment, the gap is filled with the heat insulating material layer 16, and the heat insulating material layer 16 has a strong heat conducting capability between the heat conducting ring 142 and the susceptor 11, so that the heat conducting ring 142 has a smaller thermal influence on the susceptor 11, which is beneficial to further reducing the temperature influence on the central area of the substrate W to be processed.
The materials of the insulating material layer 16 include: teflon or polyetherimide or polyetheretherketone or polyimide.
In this embodiment, further comprising: the bottom plate 141, the two ends of the bottom plate 141 are connected with the heat conduction ring 142, and the bottom plate 141 and the heat conduction ring 142 are integrally formed. The bottom plate 141 and the thermally conductive ring 142 constitute the accessory plate 14.
In this embodiment, further comprising: a thermally conductive coupling ring 17 located between the focus ring 13 and the thermally conductive ring 142. The heat conduction coupling ring 17 can promote heat conduction between the heat conduction ring 142 and the focusing ring 13, and further the temperature of the focusing ring 13 can be rapidly regulated and controlled through the heat conduction coupling ring 17. As an example, the thermally conductive coupling ring 17 is generally made of a material that is thermally well conductive but electrically insulating, for example, the thermally conductive coupling ring 17 material includes: alumina or quartz.
In other embodiments, the thermally conductive coupling ring is not included.
In this embodiment, further comprising: a thermally conductive structure (not shown in fig. 1) is disposed between thermally conductive coupling ring 17 and thermally conductive ring 142. The heat conduction capability between the heat conduction ring 142 and the focus ring 13 is further improved by the heat conduction structure.
In other embodiments, the thermally conductive structure is not included.
In this embodiment, the rf electrode assembly for a plasma processing apparatus may further include: a bottom ground ring 18, the bottom ground ring 18 surrounding the thermally conductive ring 142, the bottom ground ring 18 being capable of conducting coupled radio frequency currents within the vacuum reaction chamber to ground.
In this embodiment, the rf electrode assembly for a plasma processing apparatus may further include: an insulating ring 19 disposed between the bottom ground ring 18 and the thermally conductive ring 142. Wherein the insulating ring 19 and the bottom ground ring 18 surround the thermally conductive ring 142. In order to be able to accommodate the thermally conductive ring 142, the insulating ring 19 and the bottom ground ring 18 are moved away from the base 11.
In this embodiment, the rf electrode assembly for a plasma processing apparatus further includes: an edge ring 110 disposed at the periphery of the focus ring 13. The edge ring 110 is used to cluster the electromagnetic field distribution at the edge region of the vacuum reaction chamber 24.
In other embodiments, the edge ring is not included.
In this embodiment, the plasma processing apparatus includes a radio frequency electrode assembly for a plasma processing apparatus, the radio frequency electrode assembly for a plasma processing apparatus including: a base 11, wherein a first fluid channel A, B, C is arranged in the base 11, and the first fluid channel A, B, C is connected with a first fluid source; an electrostatic chuck 12 on the base 11, the electrostatic chuck 12 for carrying a substrate to be processed; a focus ring 13 located at the periphery of the electrostatic chuck 12; a heat conducting ring 142 located around the base 11, the heat conducting ring 142 surrounds part of the base 11, the heat conducting ring 142 is located below the focusing ring 13, a second fluid channel 15 is disposed in the heat conducting ring 142, the second fluid channel 15 is connected with a second fluid source, and heat conduction can be conducted between the heat conducting ring 142 and the focusing ring 13.
Fig. 2 is a schematic structural view of another rf electrode assembly for a plasma processing apparatus according to an embodiment of the present invention.
The rf electrode assembly according to this embodiment differs from the rf electrode assembly according to the embodiment shown in fig. 1 only in that: the distance from the top of the first region of the second fluid channel 15 to the top of the N-1 region of the second fluid channel 15 to the bottom of the focusing ring 13 decreases in sequence, and the distance from the top of the N region of the second fluid channel 15 to the bottom of the focusing ring 13 is greater than the distance from the top of the N-1 region of the second fluid channel 15 to the bottom of the focusing ring 13, in the sense that: the first region of the second fluid channel 15 is connected to the fluid input port, the nth region of the second fluid channel 15 is connected to the fluid output port, and the second fluid source flows into the second fluid channel 15 from the fluid input port, flows through each region of the second fluid channel 15, and flows out from the fluid output port. The second fluid source takes a certain time to flow through the second fluid channel 15 such that there is a temperature difference between the fluid inlet and the fluid outlet second fluid source. In order to reduce the difference of the temperature control capability of the second fluid source in the second fluid channel 15 in different areas, the distances from the top of the second fluid channel 15 from the first area to the N-1 area to the bottom of the focusing ring 13 are sequentially reduced. However, since the fluid output port is closer to the fluid input port, the second fluid source of the fluid input port affects the temperature of the second fluid source of the fluid output port, so that the temperature difference between the second fluid source of the fluid input port and the second fluid source of the fluid output port is not too large, and the distance from the top of the nth zone to the bottom of the focusing ring 13 is greater than the distance from the top of the nth zone to the bottom of the focusing ring 13, which is beneficial to improving the uniformity of the temperatures of different areas of the focusing ring 13.
In addition, although it is difficult to adjust the temperature of the edge region of the substrate W to be processed using the first fluid source, the second fluid channel 15 is provided in the heat conduction ring 142, and the second fluid source in the second fluid channel 15 can adjust the temperature of the focusing ring 13, so that the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed is adjustable, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial to forming grooves meeting the process requirements in the edge region of the substrate W to be processed.
In this embodiment, the dimensions of each region of the second fluid channel 15 are equal in a direction perpendicular to said first bearing surface D.
In other embodiments, the dimensions of each region of the second fluid channel are equal along a direction perpendicular to the first bearing surface, and the distances from the top of the first region of the second fluid channel to the top of the nth region of the second fluid channel to the bottom of the focusing ring decrease in sequence.
In this embodiment, the plasma processing apparatus includes: a capacitively coupled plasma processing apparatus (CCP) or an inductively coupled plasma processing apparatus (ICP).
Fig. 3 is a schematic structural view of a radio frequency electrode assembly for a plasma processing apparatus according to another embodiment of the present invention.
The present embodiment differs from the embodiment shown in fig. 2 in that: the dimensions of the first region of the second fluid channel 20 to the N-1 region of the second fluid channel 20 increase in sequence along the direction perpendicular to the first bearing surface D, and the dimension of the N-1 region of the second fluid channel 20 is smaller than the dimension of the N-1 region of the second fluid channel 20; the point of this embodiment is the same as the embodiment shown in fig. 2: the distance from the top of the first region of the second fluid channel 20 to the bottom of the focusing ring 13 from the top of the N-1 region of the second fluid channel 20 decreases in sequence, and the distance from the top of the N-1 region of the second fluid channel 20 to the bottom of the focusing ring 13 is greater than the distance from the top of the N-1 region of the second fluid channel 20 to the bottom of the focusing ring 13. The distance from the top of the second fluid channel 20 to the bottom of the focusing ring 13 has the same meaning as that of the embodiment shown in fig. 2, and will not be described herein.
Although it is difficult to adjust the temperature of the edge region of the substrate W to be processed using the first fluid source, the second fluid channel 20 is provided in the heat conduction ring 142, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focusing ring 13, so that the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed is adjustable, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial to forming grooves meeting the process requirements in the edge region of the substrate W to be processed.
In this embodiment, the distance from the bottom of each region of the second fluid channel 20 to the bottom of the focus ring 13 is equal.
In this embodiment, the bottom plate 21 and the heat conducting ring 142 are separate from each other. Since the bottom plate 21 is located at the bottom of the susceptor 11 and the heat conduction ring 142 and the bottom plate 21 are separated from each other, the heat conduction ring 142 and the susceptor 11 have less influence, which is advantageous in reducing the temperature influence of the heat conduction ring 142 on the central region of the substrate to be processed.
In other embodiments, the bottom plate 21 is interconnected with the thermally conductive ring 142.
In this embodiment, further comprising: an insulating layer (not shown) is provided between the bottom plate 21 and the heat conduction ring 142, and serves to isolate the bottom plate 21 from the heat conduction ring 142. The thermal barrier layer serves to further reduce thermal conduction between the thermally conductive ring 142 and the bottom plate 21, which is advantageous to further reduce the temperature effect of the thermally conductive ring 142 on the central region of the substrate to be processed.
In other embodiments, the insulating layer is not formed.
In this embodiment, the plasma processing apparatus includes: a capacitively coupled plasma processing apparatus (CCP) or an inductively coupled plasma processing apparatus (ICP).
The heat conducting ring 142 is described in detail below with reference to fig. 4.
Fig. 4 is a schematic structural view of a heat conducting ring according to an embodiment of the present invention.
In the present embodiment, the heat conduction ring 142 includes a first ring portion 142a located between the base 11 (see fig. 3) and the insulating ring 19 (see fig. 3) and a second ring portion 142b extending from the first ring portion 142a to below a part of the bottom plate 21 (see fig. 3), so that the heat conduction ring 142 is easy to install.
In other embodiments, the thermally conductive ring is only the first ring portion.
In this embodiment, the first region of the second fluid channel 20 and the top of the N-1 region of the second fluid channel 20 rise sequentially, and the distance from the top of the N region of the second fluid channel 20 to the bottom of the focusing ring is greater than the distance from the top of the N-1 region of the second fluid channel 20 to the bottom of the focusing ring, because: the first region of the second fluid channel 20 is connected to the fluid input port, and the nth region of the second fluid channel 20 is connected to the fluid output port, namely: the nth region of the second fluid channel 20 is close to the first region of the second fluid channel 20, and the temperature of the second fluid source in the first region of the second fluid channel 20 is lower, and the second fluid source in the first region will affect the temperature of the second fluid source in the nth region, so that the temperature of the second fluid source in the nth region is not too high, the temperature control capability of the second fluid source in the nth region on the corresponding focusing ring 13 is stronger, and the distance from the top of the second fluid channel 20 in the nth region to the bottom of the focusing ring is not necessarily designed to be too small.
In this embodiment, the second fluid channel 20 is a loop.
The morphology of the second fluid channel 20 illustrated in fig. 4 is described in detail below, with particular reference to fig. 5-7.
Fig. 5 is a schematic diagram of a second fluid channel in a heat conduction ring according to an embodiment of the present invention.
The second fluid passage 20 sequentially includes N regions in the circumferential direction Y, N being a natural number of 1 or more.
In the present embodiment, the second fluid channel 20 includes 7 regions, and the first region C of the second fluid channel 20 1 To a sixth zone C of the second fluid passage 20 6 The top part rises stepwise, the seventh zone C of the second fluid passage 20 7 The distance from the top to the bottom of the focus ring 13 is greater than the sixth zone C of the second fluid channel 20 6 Distance from top to bottom of focus ring. The meaning of the 7-zone depth setting of the second fluid channel 20 is the same as that of the N-zone depth setting of the second fluid channel in the embodiment of fig. 4, and will not be described herein.
The first region C1 of the second fluid passage 20 is connected to the fluid input port 20a, and the nth region of the second fluid passage 20 is connected to the fluid output port 20b.
Although it is difficult to adjust the temperature of the edge region of the substrate to be processed by using the first fluid source, the second fluid channel 20 is provided in the heat conduction ring 142, and the second fluid source in the second fluid channel 20 can adjust the temperature of the focusing ring 13, so that the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed is adjustable, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial to forming grooves meeting the process requirements in the edge region of the substrate W to be processed.
In this embodiment, two adjacent regions are connected by a connecting region D having an angle with the horizontal plane, and a first region C 1 Second zone C 2 Third zone C 3 Fourth zone C 4 Fifth zone C 5 Sixth zone C 6 And the top of the seventh zone C7 is parallel to the horizontal plane. Such a design of the second fluid channel 30 is advantageous in reducing the difficulty of machining the second fluid channel 30.
In other embodiments, the top of the second fluid channel section has an angle with the horizontal.
In this embodiment, the second fluid channel 30 is a loop.
Fig. 6 is a schematic diagram of a second fluid channel in a heat conduction ring according to another embodiment of the present invention.
This embodiment differs from the embodiment shown in fig. 5 in that: the second fluid passage 30 is a first zone C 1 To the sixth zone C of the second fluid passage 6 The top portion rises smoothly so that the second fluid source flows smoothly in the second fluid channel 30.
The first region C1 of the second fluid passage 30 is connected to the fluid input port 30a, and the nth region of the second fluid passage 30 is connected to the fluid output port 30b.
Although it is difficult to adjust the temperature of the edge region of the substrate to be processed by using the first fluid source, the second fluid channel 30 is provided in the heat conduction ring 142, and the second fluid source in the second fluid channel 30 can adjust the temperature of the focusing ring 13, so that the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed is adjustable, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial to forming grooves meeting the process requirements in the edge region of the substrate W to be processed.
In this embodiment, the second fluid channel 30 is a loop.
Fig. 7 is a schematic diagram of a second fluid channel in a heat conduction ring according to another embodiment of the present invention.
In this embodiment, the second fluid channel 40 has two circles, so that the contact area between the second fluid channel 40 and the focusing ring 13 is larger, and the temperature control capability of the second fluid channel 40 on the focusing ring 13 is stronger.
Although it is difficult to adjust the temperature of the edge region of the substrate to be processed by using the first fluid source, the second fluid channel 40 is provided in the heat conduction ring 142, and the second fluid source in the second fluid channel 40 can adjust the temperature of the focusing ring 13, so that the temperature difference between the focusing ring 13 and the edge of the substrate W to be processed is adjustable, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial to forming grooves meeting the process requirements in the edge region of the substrate W to be processed.
In other embodiments, the number of turns of the second fluid passage is greater than two.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims (18)

1. A radio frequency electrode assembly for a plasma processing apparatus, comprising:
the device comprises a base, wherein a first fluid channel is arranged in the base and is connected with a first fluid source;
an electrostatic chuck on the base for placing a substrate to be processed thereon;
a focus ring located at a periphery of the electrostatic chuck;
a heat conducting ring positioned around the base, the heat conducting ring being positioned below the focusing ring and at least partially surrounding the base, a second fluid channel being provided within the heat conducting ring, the second fluid channel being connected to a second fluid source, the heat conducting ring being capable of conducting heat between the heat conducting ring and the focusing ring;
the heat conduction ring comprises a first ring part positioned below the focusing ring and a second ring part extending from the first ring part to below the base;
a gap is formed between the heat conduction ring and the base; the gap is filled with a heat insulation material layer;
a thermally conductive coupling ring between the focus ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the thermally conductive ring; an insulating ring between the bottom ground ring and the thermally conductive ring, the insulating ring surrounding the thermally conductive ring;
The second fluid channel sequentially comprises N areas along the circumferential direction, N is a natural number greater than or equal to 1, a first area of the second fluid channel is connected with the fluid input port, an N area of the second fluid channel is connected with the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, wherein the first bearing surface is used for bearing a substrate to be processed;
along the direction perpendicular to the first bearing surface, the size of each area of the second fluid channel is equal, and the distances from the top of the first area to the top of the N area of the second fluid channel to the bottom of the focusing ring are sequentially reduced;
or;
along the direction perpendicular to the first bearing surface, each area of the second fluid channel is equal in size, the distances from the first area of the second fluid channel to the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring are sequentially reduced, and the distance from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring
Or;
the sizes of the first region of the second fluid channel and the Nth region of the second fluid channel are sequentially increased along the direction perpendicular to the first bearing surface; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the first region of the second fluid channel to the top of the N region of the second fluid channel to the bottom of the focusing ring is sequentially reduced;
Or;
the size of the first region of the second fluid channel to the N-1 region of the second fluid channel increases in sequence along the direction perpendicular to the first bearing surface, and the size of the N region of the second fluid channel is smaller than that of the N-1 region of the second fluid channel; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring is sequentially reduced, and the distance from the top of the N zone of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.
2. The radio frequency electrode assembly according to claim 1, wherein the gap has a width of greater than or equal to 0.5 millimeters.
3. The radio frequency electrode assembly according to claim 1, wherein the material of the insulating material layer comprises: teflon or polyetherimide or polyetheretherketone or polyimide.
4. The radio frequency electrode assembly of claim 1, wherein the material of the thermally conductive coupling ring comprises: alumina or quartz.
5. The radio frequency electrode assembly according to claim 1, further comprising: a bottom plate positioned below the base.
6. The rf electrode assembly of claim 5, wherein the bottom plate is interconnected with a thermally conductive ring; alternatively, the bottom plate and the thermally conductive ring are separated from each other.
7. The rf electrode assembly of claim 1, wherein the top of the second fluid channel first region to the second fluid channel N-1 region rises smoothly or stepwise.
8. The radio frequency electrode assembly according to claim 1, wherein the number of turns of the second fluid channel is 1 turn or greater than 1 turn.
9. The radio frequency electrode assembly according to claim 1, further comprising: the measuring unit is used for measuring the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is larger than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is smaller than the target dimension.
10. A plasma processing apparatus, comprising:
A vacuum reaction chamber;
a base positioned at the downstream of the vacuum reaction cavity, wherein a first fluid channel is arranged in the base and is connected with a first fluid source;
an electrostatic chuck on the base for placing a substrate to be processed thereon;
a focus ring located at a periphery of the electrostatic chuck;
a heat conducting ring positioned around the base, the heat conducting ring being positioned below the focusing ring and at least partially surrounding the base, a second fluid channel being provided within the heat conducting ring, the second fluid channel being connected to a second fluid source, the heat conducting ring being capable of conducting heat between the heat conducting ring and the focusing ring;
the heat conduction ring comprises a first ring part positioned below the focusing ring and a second ring part extending from the first ring part to below the base;
a gap is formed between the heat conduction ring and the base; the gap is filled with a heat insulation material layer;
the air inlet device is positioned at the top of the vacuum reaction cavity and is used for providing reaction gas into the vacuum reaction cavity;
a thermally conductive coupling ring between the focus ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the thermally conductive ring; an insulating ring between the bottom ground ring and the thermally conductive ring, the insulating ring surrounding the thermally conductive ring;
The second fluid channel sequentially comprises N areas along the circumferential direction, N is a natural number which is greater than or equal to 1, a first area channel of the second fluid channel is connected with the fluid input port, an N area of the second fluid channel is connected with the fluid output port, the second fluid source enters the second fluid channel from the fluid input port, and flows out of the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, wherein the first bearing surface is used for bearing a substrate to be processed; along the direction perpendicular to the first bearing surface, the size of each area of the second fluid channel is equal, and the distances from the top of the first area to the top of the N area of the second fluid channel to the bottom of the focusing ring are sequentially reduced;
or;
along the direction perpendicular to the first bearing surface, the size of each area of the second fluid channel is equal, the distances from the top of the first area to the bottom of the N-1 area of the second fluid channel to the bottom of the focusing ring of the second fluid channel are sequentially reduced, and the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring of the second fluid channel is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring;
or;
the sizes of the first region of the second fluid channel and the Nth region of the second fluid channel are sequentially increased along the direction perpendicular to the first bearing surface; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the first region of the second fluid channel to the top of the N region of the second fluid channel to the bottom of the focusing ring is sequentially reduced;
Or;
the size of the first region of the second fluid channel to the N-1 region of the second fluid channel increases in sequence along the direction perpendicular to the first bearing surface, and the size of the N region of the second fluid channel is smaller than that of the N-1 region of the second fluid channel; the distances from the bottom of the first region of the second fluid channel to the bottom of the N region of the second fluid channel to the bottom of the focusing ring are equal; the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring is sequentially reduced, and the distance from the top of the N zone of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 zone of the second fluid channel to the bottom of the focusing ring.
11. The plasma processing apparatus according to claim 10, wherein the top of the second fluid passage from the first region to the N-1 th region of the second fluid passage rises smoothly or stepwise.
12. The plasma processing apparatus according to claim 10, wherein the number of turns of the second fluid passage is 1 turn or more than 1 turn.
13. The plasma processing apparatus according to claim 10, further comprising: a bottom plate positioned below the base.
14. The plasma processing apparatus of claim 13 wherein the bottom plate is interconnected with a thermally conductive ring; alternatively, the bottom plate and the thermally conductive ring are separated from each other.
15. The plasma processing apparatus according to claim 10, wherein the gas inlet means comprises a mounting substrate provided on top of the vacuum reaction chamber and a gas shower head provided below the mounting substrate; the plasma processing apparatus further includes: the radio frequency power source is connected with the base; and the bias power source is connected with the base.
16. The plasma processing apparatus of claim 10 wherein the vacuum chamber sidewall comprises a second bearing surface; the plasma processing apparatus further includes: an annular liner comprising a sidewall protection ring and a load ring securing the sidewall protection ring to the second load surface; an insulating window located on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; a radio frequency power source connected to the inductive coupling coil; a bias power source is coupled to the base.
17. The plasma processing apparatus according to claim 10, further comprising: a seal groove in the upper and lower surfaces of the thermally conductive ring and a seal gasket in the seal groove, the base and the electrostatic chuck being in a vacuum environment.
18. The plasma processing apparatus according to claim 10, further comprising: the measuring unit is used for measuring the dimension of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is larger than the target dimension, and the temperature of the second fluid source is decreased when the dimension of the measuring unit measuring groove along the direction parallel to the surface of the substrate to be processed is smaller than the target dimension.
CN201910600861.6A 2018-12-17 2019-07-04 Radio frequency electrode assembly and plasma processing apparatus Active CN111326390B (en)

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