CN117253770A - Plasma processing apparatus, focus ring temperature adjustment apparatus and method - Google Patents

Plasma processing apparatus, focus ring temperature adjustment apparatus and method Download PDF

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Publication number
CN117253770A
CN117253770A CN202210656724.6A CN202210656724A CN117253770A CN 117253770 A CN117253770 A CN 117253770A CN 202210656724 A CN202210656724 A CN 202210656724A CN 117253770 A CN117253770 A CN 117253770A
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China
Prior art keywords
ring
temperature control
temperature
control unit
focusing
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Chinese (zh)
Inventor
王明明
王智昊
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN202210656724.6A priority Critical patent/CN117253770A/en
Publication of CN117253770A publication Critical patent/CN117253770A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a focusing ring temperature adjusting device which is arranged on a plasma processing device, wherein the plasma processing device comprises a base for bearing a substrate, a focusing ring encircling the periphery of the base, the outer side wall of the focusing ring and part of the top surface of the focusing ring are covered by a fixing ring; alternatively, the outer side wall of the focusing ring is covered by the fixing ring; the focus ring temperature adjustment device includes: the first temperature control unit is arranged at the top of the inner part of the fixed ring and can control the temperature and adjust the temperature of the focusing ring through the fixed ring by heat conduction. Meanwhile, the invention also discloses a plasma processing device and a temperature adjusting method of the focusing ring. The invention solves the technical problems of mutual superposition interference of the heating path and the cooling path of the focusing ring and low temperature control efficiency, improves the heat conduction efficiency of temperature control of the focusing ring and improves the temperature control effect.

Description

Plasma processing apparatus, focus ring temperature adjustment apparatus and method
Technical Field
The invention relates to the field of plasma treatment, in particular to a plasma treatment device, a focusing ring temperature adjusting device and a focusing ring temperature adjusting method.
Background
The plasma processing apparatus is to process a semiconductor substrate or a plasma panel by introducing a reaction gas containing an appropriate etchant or deposition source gas into a vacuum reaction chamber, and then performing rf energy input to the vacuum reaction chamber to activate the reaction gas to ignite and sustain a plasma so as to etch a material layer on a substrate surface or deposit a material layer on a substrate surface by the plasma.
As shown in fig. 1, in a conventional capacitive coupling type plasma processing apparatus (CCP), a vacuum reaction chamber 01 is included, an air inlet device such as a gas shower head 02 is provided at the top of the reaction chamber 01, and an upper electrode 03 coupled to the ground or a radio frequency potential is provided. A base 04 is arranged at the bottom of the reaction chamber 01, and the substrate 05 is carried in the process through an electrostatic chuck arranged on the base 04; a lower electrode is provided at the susceptor 04 and rf power is applied thereto, so that an rf electric field is formed in the reaction chamber 01, and the introduced reaction gas is generated into plasma. A focus ring 06 is circumferentially disposed around the outer edge of the pedestal 04 to control plasma uniformity by adjusting the distribution of the entire rf electric field within the reaction chamber 01, particularly at the edge of the substrate 05.
In addition to electrical effects, the temperature of the focus ring 06 can also affect the deposition of polymer at the edge of the substrate 05, resulting in microscopic critical dimension differences. With the demand of etching process for high aspect ratio, high power (low frequency) etching is widely used. High power (low frequency) etching will cause a sharp rise in temperature within the reaction chamber 01 and a large amount of heat will be obtained by both the substrate 05 and the focus ring 06. In order to ensure etching uniformity of the substrate 05 to be processed, a cooling medium pipe 08 for cooling the susceptor 04 is provided inside the susceptor 04, and the substrate 05 transfers heat to the susceptor 04 through an electrostatic chuck to rapidly dissipate heat. At the same time, if the focus ring 06 does not have a good heat dissipation path, the temperature difference between the focus ring 06 and the substrate 05 will be increased, which will cause the substrate 05 edge etching process to be detuned.
In view of the above, an insulating ring 07 or the like is generally provided around the outer periphery of the base 04 below the focus ring 06 as a heat conductive layer, and heat of the focus ring 06 is transferred to the base 04 to be cooled and dissipated. Further, because the operating temperature of the focus ring 06 is different in different etching processes, a heater is typically provided to heat the focus ring 06 for better and faster temperature control of the focus ring 06. At present, the heater 09 is generally disposed inside the insulating ring 07.
However, this design has some problems, on one hand, the temperature regulation target of the focusing ring 06 is the temperature of the top surface of the focusing ring, but the heater 09 is arranged below the bottom surface of the focusing ring 06, and the heat transfer path to the top surface of the focusing ring is far, so that the heat transfer efficiency from the heater 09 to the top surface of the focusing ring is low, and the temperature rise is slow; on the other hand, the heating path of the heater 09 to the focus ring 06 and the cooling path of the cooling medium pipe 08 to the focus ring 06 overlap each other, which may cause mutual interference between heating and cooling, and the temperature control effect is not ideal and the speed is slow.
Based on the above, the present invention provides a plasma processing apparatus, a focus ring temperature adjusting apparatus and a focus ring temperature adjusting method, so as to solve the drawbacks and limitations of the prior art.
Disclosure of Invention
The invention aims to provide a plasma processing device, a focusing ring temperature adjusting device and a focusing ring temperature adjusting method, so that the technical problems of the prior art that the heating and cooling processes of a focusing ring are mutually interfered, the heat conduction efficiency is low, the temperature control effect is not ideal and the speed is low are solved.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a focusing ring temperature adjusting device arranged on a plasma processing device, wherein the plasma processing device comprises a base for bearing a substrate, a focusing ring encircling the periphery of the base, the outer side wall of the focusing ring and part of the top surface of the focusing ring are covered by a fixing ring;
alternatively, the outer side wall of the focusing ring is covered by the fixing ring;
the focus ring temperature adjustment device includes: the first temperature control unit is arranged at the top of the inner part of the fixed ring and can control the temperature and adjust the temperature of the focusing ring through the fixed ring by heat conduction.
Preferably, the focusing ring temperature adjusting device further comprises a second temperature control unit, and the temperature control direction of the second temperature control unit is opposite to that of the first temperature control unit;
the second temperature control unit is positioned below the focusing ring, and the first temperature control unit and the second temperature control unit are respectively arranged on the upper side and the lower side of the focusing ring so as to reduce interference of temperature control effects between the first temperature control unit and the second temperature control unit.
Preferably, the first temperature control unit is a heater, and the second temperature control unit is a cooler.
Preferably, the periphery of the top surface of the focusing ring is provided with a downward step;
the fixing ring comprises a horizontal extending section and a vertical extending section, wherein the horizontal extending section covers the step top surface of the gathering ring, and the vertical extending section covers the side wall below the step top surface of the focusing ring.
Preferably, the first temperature control unit is disposed inside the horizontal extension section.
Preferably, the outer side wall of the focusing ring is a first inclined surface, and the first inclined surface is inclined from top to bottom along the centrifugal radial direction of the focusing ring;
the inner side of the fixed ring is provided with a second inclined plane matched with the first inclined plane, and the second inclined plane is abutted with the first inclined plane.
Preferably, the first temperature control unit is close to the top surface of the focusing ring.
Preferably, the first temperature control units are distributed uniformly along the circumference of the focusing ring.
Preferably, the first temperature control unit is a ring body coaxial with the focusing ring, and the width of the ring body is consistent.
Preferably, the first temperature control unit comprises a temperature sensing probe for detecting the temperature of the focusing ring.
Preferably, the outer edge of the base is provided with a step, and the focusing ring is positioned above the step of the base; the second temperature control unit is arranged in the base.
Preferably, the plasma processing apparatus further comprises an insulating ring between the focus ring and the step of the susceptor.
Preferably, the second temperature control unit is an annular cooling channel, and the inside of the second temperature control unit is filled with a cooling medium.
Preferably, a grounded shielding ring is arranged inside the base, and a cable is arranged inside the shielding ring and is used for providing electric energy for the first temperature control unit.
Preferably, the plasma device is provided with a cover ring surrounding the stationary ring and covering the top surface and the outer side wall of the stationary ring.
A plasma processing apparatus, comprising:
a reaction chamber in which a susceptor for fixing a substrate is disposed;
a focusing ring surrounding the outer periphery of the base;
a fixing ring surrounding the periphery of the focusing ring;
the focusing ring temperature adjusting device.
The temperature adjustment method of the focusing ring is realized by the plasma processing device and comprises the following steps:
a cooling process or a controllable heating process is carried out on a focusing ring in the plasma processing device;
wherein, the cooling process is: the heat radiated to the focusing ring by the plasma is downwards transferred to a base which is in butt joint with the insulating ring through the insulating ring which is in contact with the lower surface of the focusing ring, and is cooled through a second temperature control unit which is arranged in the base;
the controllable temperature rising process is as follows: and starting a first temperature control unit arranged in the fixed ring to generate a controllable external heating source, and transferring heat of the external heating source to a focusing ring which is abutted with the fixed ring through the fixed ring to controllably heat the focusing ring.
Compared with the prior art, the invention has the following advantages:
1. the first temperature control unit and the second temperature control unit are respectively arranged at the upper side and the lower side of the focusing ring, so that the temperature control paths of the focusing ring are separated by the first temperature control unit and the second temperature control unit, the mutual interference of the heating and cooling processes of the focusing ring is avoided, the temperature control effect of the focusing ring is improved, and the temperature control speed is accelerated;
2. the first temperature control unit is arranged in the fixing ring and close to the top surface of the focusing ring, so that the heat conduction path from the first temperature control unit to the top surface of the focusing ring is shortened, and the heat conduction efficiency from the first temperature control unit to the top surface of the focusing ring through the fixing ring is improved;
3. through the inclined surface contact design of the focusing ring and the fixing ring, the thermal contact area between the focusing ring and the fixing ring is increased, and the heat conduction efficiency between the focusing ring and the fixing ring is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a prior art plasma processing apparatus;
FIG. 2 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 3 is a schematic view of one embodiment of a focus ring temperature adjustment device according to the present invention;
fig. 4 is a schematic structural diagram of one embodiment of a focus ring temperature adjustment device according to the present invention.
Detailed Description
The present invention will be further described with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent, and the described embodiments should not be construed as limiting the present invention, and all other embodiments obtained by those skilled in the art without making any inventive effort are within the scope of the present invention.
In the following description, reference is made to "some embodiments," "one or more embodiments," which describe a subset of all possible embodiments, but it is to be understood that "some embodiments," "one or more embodiments," can be the same subset or different subsets of all possible embodiments and can be combined with one another without conflict.
In the following description, the terms "first", "second", "third" and the like are used merely for respective similar objects and do not represent a specific ordering for the objects, it being understood that the "first", "second", "third" may be interchanged with a specific order or sequence, as allowed, to enable embodiments of the invention described herein to be practiced otherwise than as shown or described.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein is for the purpose of describing embodiments of the invention only and is not intended to be limiting of the invention.
Fig. 2 shows a capacitively coupled plasma processing apparatus (CCP) comprising a reaction chamber 1 surrounded by reaction chamber walls and being evacuable, a gas shower head 2 being arranged below a top cover in the reaction chamber 1, the gas shower head 2 being connected to a source of reactive gas for introducing the reactive gas for an etching process and maintaining a certain flow rate. Meanwhile, a top cover of the reaction chamber 1 is provided with a grounded upper electrode 3.
A base 4 is arranged on the bottom wall in the reaction chamber 1 and is used for bearing a substrate 5 to be processed which is placed on the base 4, and the base 4 can be made of aluminum; the susceptor 4 is applied with a radio frequency power RF as a lower electrode, and a radio frequency electric field is formed between the upper electrode 2 and the lower electrode (susceptor 4) in the reaction chamber 1 to dissociate the reaction gas introduced into the reaction chamber 1, and a plasma for etching reaction is formed in a region between the susceptor 4 and the gas shower head 2 to perform a process such as surface etching on the substrate 5.
The focusing ring 6 is arranged around the periphery of the base 4, and the focusing ring 6 can adjust the distribution of the whole radio frequency electromagnetic in the reaction cavity 1, especially the electric field distribution at the basic edge, so as to realize the uniform control of plasma in the etching process. A fixing ring 7 is also arranged around the outer edge of the focusing ring 6 and is used for fixing the focusing ring 5. And, surround the fixed ring 7 and cover the top surface and the outer side wall of the fixed ring 7, also surround and set up the cover ring 8, in order to prevent the erosion of each part under the cover ring 8 by the plasma in the reaction chamber 1.
During the actual etching process, the surface of the focus ring 6 may deposit polymer, which in turn may lead to differences in the microscopic critical dimensions of the substrate 5. In order to reduce the deposition of polymer on the surface of the focus ring 6, the present embodiment provides a focus ring temperature adjustment device that controls the temperature of the top surface of the focus ring 6. As shown in fig. 3 and 4, the focus ring temperature adjusting device includes a first temperature control unit 11a and a second temperature control unit 11c; wherein,
the first temperature control unit 11a is provided at the inner top of the fixing ring 7, and can control the temperature and adjust the temperature of the focus ring 6 via the fixing ring 7 by heat conduction. In some embodiments, the first temperature control units 11a are multiple and uniformly distributed along the circumferential direction of the focusing ring 6 to realize uniformity of temperature control of the focusing ring 6; in other embodiments, the first temperature control unit 11a is a ring body coaxial with the focusing ring, and the width of the ring body is consistent, so that the temperature control on the focusing ring 6 can be more uniform. In some embodiments, the first temperature control unit 11a includes a temperature sensing probe for detecting the temperature of the top surface of the focus ring 6, so as to precisely control the temperature of the focus ring 6.
The second temperature control unit 11c is located below the focusing ring 6, and the temperature control directions of the second temperature control unit 11c and the first temperature control unit 11a are opposite, and the second temperature control unit 11c and the first temperature control unit 11a are respectively arranged on the upper side and the lower side of the focusing ring 6, so that interference of temperature control effects between the first temperature control unit 11a and the second temperature control unit 11c is reduced. In some embodiments, the outer edge of the base 4 is provided with a step, the focus ring 6 is located above the step of the base 4, and the second temperature control unit 11c is provided inside the base 4. In some embodiments, an insulating ring 9 as a heat conducting layer is further disposed around the outer edge of the base 04 and between the focusing ring 6 and the step of the base 4, and during etching, the second temperature control unit 11c controls the temperature of the focusing ring 6 through heat conduction of the insulating ring 9, and by disposing the insulating ring 9, interference of the temperature control effect between the first temperature control unit 11a and the second temperature control unit 11c can also be reduced.
Further, in some embodiments, the first temperature control unit 11a is a heater for performing temperature-raising control on the focus ring 6; the second temperature control unit 11c is a cooler for performing cooling control on the focus ring 6. In some embodiments, the second temperature control unit 11c is an annular cooling channel, filled with a cooling medium inside, for cooling the susceptor 4 and the substrate 5, and the focus ring 6.
The focusing ring 6 and the fixing ring 7 may be designed in a wide variety of different shapes, one of which is shown in fig. 3, the outer periphery of the top surface of the focusing ring 6 is provided with a downward step, and the fixing ring 7 includes a horizontal extension section covering the step top surface of the focusing ring 6 and a vertical extension section covering the side wall below the step top surface of the focusing ring 6, and the first temperature control unit 11a is provided inside the horizontal extension section, which can make the fixing ring 7 fix the focusing ring 6 well, the contact area of the focusing ring 6 and the fixing ring 7 is large, and the first temperature control unit 11a is closer to the top surface of the focusing ring 6, so that the temperature control effect is better. Further, fig. 4 shows another preferred solution, wherein the outer side wall of the focusing ring 6 is a first inclined surface, and the first inclined surface is inclined from top to bottom along the centrifugal radial direction of the focusing ring 6; the second inclined plane matched with the first inclined plane is arranged on the inner side of the fixed ring 7, the second inclined plane is abutted with the first inclined plane, the fixed ring 7 can be used for fixing the focusing ring 6 better through the design, the contact area between the focusing ring 6 and the fixed ring 7 is further increased through the abutting of the first inclined plane and the second inclined plane, and the heat conduction efficiency of the fixed ring 7 to the focusing ring 6 is enhanced.
Preferably, in some embodiments, the first temperature control unit 11a is close to the top surface of the focusing ring 6, so as to shorten the heat conduction path from the first temperature control unit 11a to the top surface of the focusing ring 6, improve the temperature control effect and increase the temperature control speed.
In some embodiments, the base 4 is internally provided with a grounded shielding ring 10, and a cable 11b is provided inside the shielding ring 10, the cable 11b being used for providing electric energy to the first temperature control unit 11 a; in the embodiment provided with the insulating ring 9, the insulating ring 9 is provided with a through hole on the path of the cable 11b, from which the cable 11b passes through the insulating ring 9.
The working principle of the focusing ring temperature adjusting device in this embodiment is that, on one hand, the first temperature control unit 11a can control the temperature by itself when the temperature control is needed, and conduct heat to the focusing ring 6 through the fixing ring 7, so as to change the temperature of the top surface of the focusing ring 6; on the other hand, the second temperature control unit 11c can control the temperature by itself when the temperature control is required, and conduct heat to the focus ring 6 directly or through the insulating ring 9, thereby changing the temperature of the top surface of the focus ring 6. Since the first temperature control unit 11a is disposed at the top of the inside of the fixed ring 7 and is close to the top surface of the focusing ring 6, the heat conduction path from the first temperature control unit to the top surface of the focusing ring 6 is short, the heat conduction efficiency is high, the temperature control effect is good, and the reaction is rapid. In addition, because the heat conduction path from the first temperature control unit 11a to the top surface of the focusing ring 6 is different from the heat conduction path from the second temperature control unit 11c to the top surface of the focusing ring 6, the mutual interference of heating and cooling on the top surface of the focusing ring 6 is avoided, the temperature control effect is improved, and the temperature control speed is increased.
The present embodiment also provides a plasma processing apparatus, as shown in fig. 2 to 4, including:
a reaction chamber 1 in which a susceptor 4 for fixing a substrate 5 is disposed; a focus ring 6 surrounding the outer periphery of the susceptor 4 for realizing control of plasma uniformity; a fixing ring 7 surrounding the outer circumference of the focusing ring 6 for fixing the focusing ring 6; and, the focusing ring temperature adjusting device provided by the embodiment.
In addition, as shown in fig. 2 to 4, the present embodiment further provides a method for adjusting the temperature of the focus ring, which is implemented by using the plasma processing apparatus provided in the present embodiment, and includes performing a cooling process or a controllable heating process on the focus ring 6 in the plasma processing apparatus;
wherein, the cooling process is: the heat radiated to the focusing ring 6 by the plasma is downwards transferred to the base 4 which is in contact with the insulating ring 9 through the insulating ring 9 which is in contact with the lower surface of the focusing ring 6, and is cooled down through a second temperature control unit 11c which is arranged in the base 4;
the controllable temperature rising process is as follows: the first temperature control unit 11a arranged in the fixed ring 7 is started to generate a controllable external heat source, and the heat of the external heat source is transferred to the focusing ring 6 abutted against the fixed ring 7 through the fixed ring 7 to controllably heat the focusing ring 6.
The focus ring temperature adjusting device provided by the invention is not only suitable for a capacitive coupling type plasma processing device (CCP), but also suitable for an inductive coupling type plasma processing device (ICP).
The foregoing is merely exemplary embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and scope of the present invention are included in the protection scope of the present invention.

Claims (17)

1. A focus ring temperature adjusting device is arranged on a plasma processing device, the plasma processing device comprises a base used for bearing a substrate and a focus ring encircling the periphery of the base, and is characterized in that,
the outer side wall of the focusing ring and part of the top surface are covered by the fixing ring;
alternatively, the outer side wall of the focusing ring is covered by the fixing ring;
the focus ring temperature adjustment device includes: the first temperature control unit is arranged at the top of the inner part of the fixed ring and can control the temperature and adjust the temperature of the focusing ring through the fixed ring by heat conduction.
2. The focus ring temperature adjustment device of claim 1, wherein,
the focusing ring temperature adjusting device further comprises a second temperature control unit, and the temperature control direction of the second temperature control unit is opposite to that of the first temperature control unit;
the second temperature control unit is positioned below the focusing ring, and the first temperature control unit and the second temperature control unit are respectively arranged on the upper side and the lower side of the focusing ring so as to reduce interference of temperature control effects between the first temperature control unit and the second temperature control unit.
3. The focus ring temperature adjustment device of claim 2, wherein,
the first temperature control unit is a heater, and the second temperature control unit is a cooler.
4. The focus ring temperature adjustment device of claim 1, wherein,
the periphery of the top surface of the focusing ring is provided with a downward step;
the fixing ring comprises a horizontal extending section and a vertical extending section, wherein the horizontal extending section covers the step top surface of the gathering ring, and the vertical extending section covers the side wall below the step top surface of the focusing ring.
5. The focus ring temperature adjustment device of claim 4, wherein,
the first temperature control unit is arranged inside the horizontal extension section.
6. The focus ring temperature adjustment device of claim 1, wherein,
the outer side wall of the focusing ring is a first inclined surface which is inclined from top to bottom along the centrifugal radial direction of the focusing ring;
the inner side of the fixed ring is provided with a second inclined plane matched with the first inclined plane, and the second inclined plane is abutted with the first inclined plane.
7. The focus ring temperature adjustment device of claim 5 or 6, wherein,
the first temperature control unit is close to the top surface of the focusing ring.
8. The focus ring temperature adjustment device of claim 1, wherein,
the plurality of first temperature control units are uniformly distributed along the circumference of the focusing ring.
9. The focus ring temperature adjustment device of claim 1, wherein,
the first temperature control unit is a ring body coaxial with the focusing ring, and the width of the ring body is consistent.
10. The focus ring temperature adjustment device of claim 1, wherein,
the first temperature control unit comprises a temperature sensing probe for detecting the temperature of the focusing ring.
11. The focus ring temperature adjustment device of claim 2, wherein,
the outer edge of the base is provided with a step, and the focusing ring is positioned above the step of the base;
the second temperature control unit is arranged in the base.
12. The focus ring temperature adjustment device of claim 11,
the plasma processing apparatus further includes an insulating ring positioned between the focus ring and the step of the susceptor.
13. The focus ring temperature adjustment device of claim 11,
the second temperature control unit is an annular cooling channel, and cooling medium is filled in the second temperature control unit.
14. The focus ring temperature adjustment device of claim 1, wherein,
the inside shielding ring that is provided with the ground connection of base shielding ring's inside is provided with the cable, the cable is used for providing the electric energy to first accuse temperature unit.
15. The focus ring temperature adjustment device of claim 1, wherein,
the plasma device is provided with a cover ring which surrounds the fixed ring and covers the top surface and the outer side wall of the fixed ring.
16. A plasma processing apparatus, comprising:
a reaction chamber in which a susceptor for fixing a substrate is disposed;
a focusing ring surrounding the outer periphery of the base;
a fixing ring surrounding the periphery of the focusing ring;
the focus ring temperature adjustment device according to any one of claims 1-15.
17. A method of adjusting the temperature of a focus ring, realized by the plasma processing apparatus according to claim 16, comprising:
a cooling process or a controllable heating process is carried out on a focusing ring in the plasma processing device;
wherein, the cooling process is: the heat radiated to the focusing ring by the plasma is downwards transferred to a base which is in butt joint with the insulating ring through the insulating ring which is in contact with the lower surface of the focusing ring, and is cooled through a second temperature control unit which is arranged in the base;
the controllable temperature rising process is as follows: and starting a first temperature control unit arranged in the fixed ring to generate a controllable external heating source, and transferring heat of the external heating source to a focusing ring which is abutted with the fixed ring through the fixed ring to controllably heat the focusing ring.
CN202210656724.6A 2022-06-10 2022-06-10 Plasma processing apparatus, focus ring temperature adjustment apparatus and method Pending CN117253770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210656724.6A CN117253770A (en) 2022-06-10 2022-06-10 Plasma processing apparatus, focus ring temperature adjustment apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210656724.6A CN117253770A (en) 2022-06-10 2022-06-10 Plasma processing apparatus, focus ring temperature adjustment apparatus and method

Publications (1)

Publication Number Publication Date
CN117253770A true CN117253770A (en) 2023-12-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210656724.6A Pending CN117253770A (en) 2022-06-10 2022-06-10 Plasma processing apparatus, focus ring temperature adjustment apparatus and method

Country Status (1)

Country Link
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