TWI817056B - Lower electrode assembly, plasma processing device using same and working method thereof - Google Patents
Lower electrode assembly, plasma processing device using same and working method thereof Download PDFInfo
- Publication number
- TWI817056B TWI817056B TW109139421A TW109139421A TWI817056B TW I817056 B TWI817056 B TW I817056B TW 109139421 A TW109139421 A TW 109139421A TW 109139421 A TW109139421 A TW 109139421A TW I817056 B TWI817056 B TW I817056B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluid
- lower electrode
- electrode assembly
- electrostatic chuck
- temperature
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000012530 fluid Substances 0.000 claims abstract description 132
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 13
- 238000009529 body temperature measurement Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000112 cooling gas Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
本發明公開了一種下電極組件、使用其的等離子體處理裝置及其工作方法。其中下電極組件包括靜電夾盤、基座、流體循環層。基座包括冷卻層和位於冷卻層上方的加熱層，冷卻層內設置冷卻通道。加熱層，其位於冷卻層上方，所述加熱層內設置加熱裝置。流體循環層位於加熱層上方，內部設置容納流體媒介的流體通道，流體媒介用於對靜電夾盤的溫度分布進行調節。本發明藉由使用流體介質以徑向方式均衡加熱元件的不均勻性，對應於下面的加熱裝置的幾個流體通道可以用於提供溫度分布的徑向對稱，以達到對靜電夾盤的溫度分布進行調節的作用。 The invention discloses a lower electrode assembly, a plasma processing device using the lower electrode assembly and a working method thereof. The lower electrode assembly includes an electrostatic chuck, a base, and a fluid circulation layer. The base includes a cooling layer and a heating layer located above the cooling layer, and a cooling channel is provided in the cooling layer. The heating layer is located above the cooling layer, and a heating device is provided in the heating layer. The fluid circulation layer is located above the heating layer, and a fluid channel containing a fluid medium is provided inside. The fluid medium is used to adjust the temperature distribution of the electrostatic chuck. By using a fluid medium to equalize the non-uniformity of the heating element in a radial manner, several fluid channels corresponding to the underlying heating device can be used to provide radial symmetry of the temperature distribution to achieve the temperature distribution of the electrostatic chuck. to regulate.
Description
本發明涉及半導體領域的裝置，特別涉及一種下電極組件、使用其的等離子體處理裝置及其工作方法。 The present invention relates to devices in the semiconductor field, and in particular, to a lower electrode assembly, a plasma processing device using the lower electrode assembly, and a working method thereof.
習知的等離子體處理裝置中用於承載基片的下電極組件上設有加熱元件，而徑向分布的加熱元件因其區域設計而具有熱點和冷點，即溫度不均衡，從而需要藉由打開或關閉較小的加熱元件以進行精細調節，來補償各種角度位置的熱量。 In a conventional plasma processing device, a heating element is provided on the lower electrode assembly for carrying a substrate. The radially distributed heating element has hot and cold spots due to its regional design, that is, temperature imbalance. Therefore, it is necessary to Turn the smaller heating element on or off for fine adjustment to compensate for heat at various angles.
承上述，由於所述補償方式必須根據溫度和壓力條件進行預校準和分析，從而使用這種補償方法十分麻煩。 Following the above, using this compensation method is cumbersome since it must be pre-calibrated and analyzed based on temperature and pressure conditions.
本發明的目的在於提供一種下電極組件、等離子體處理裝置及其工作方法，用以解決前述先前技術中所面臨的問題。 The object of the present invention is to provide a lower electrode assembly, a plasma processing device and a working method thereof, so as to solve the aforementioned problems faced in the prior art.
為了達到上述目的，本發明的第一技術手段是提供一種下電極組件，其包括靜電夾盤、基座、流體循環層。靜電夾盤用於吸附待處理基片。基座用於承載靜電夾盤，基座包括冷卻層和位於冷卻層上方的加熱層，冷卻層內設置冷卻通道。加熱層，其位於冷卻層上方，所述加熱層內設置加熱裝置。流 體循環層位於加熱層上方，內部設置容納流體媒介的流體通道，流體媒介用於對靜電夾盤的溫度分布進行調節。 In order to achieve the above object, the first technical means of the present invention is to provide a lower electrode assembly, which includes an electrostatic chuck, a base, and a fluid circulation layer. The electrostatic chuck is used to adsorb the substrate to be processed. The base is used to carry the electrostatic chuck. The base includes a cooling layer and a heating layer located above the cooling layer. A cooling channel is provided in the cooling layer. The heating layer is located above the cooling layer, and a heating device is provided in the heating layer. flow The body circulation layer is located above the heating layer, and a fluid channel containing a fluid medium is provided inside. The fluid medium is used to adjust the temperature distribution of the electrostatic chuck.
可選地，流體通道連接流體控制裝置，流體控制裝置依據溫度數據控制流體通道中的流體媒介的流速。 Optionally, the fluid channel is connected to a fluid control device, and the fluid control device controls the flow rate of the fluid medium in the fluid channel according to the temperature data.
可選地，靜電夾盤內設置若干個溫度測量裝置，若干個溫度測量裝置提供溫度數據。 Optionally, several temperature measuring devices are provided in the electrostatic chuck, and the several temperature measuring devices provide temperature data.
可選地，靜電夾盤與基座之間設置若干個溫度測量裝置，若干個溫度測量裝置提供溫度數據。 Optionally, several temperature measuring devices are arranged between the electrostatic chuck and the base, and the several temperature measuring devices provide temperature data.
可選地，待處理基片貼有若干個溫度測量片，若干個溫度測量片提供溫度數據。 Optionally, the substrate to be processed is attached with several temperature measurement pieces, and the several temperature measurement pieces provide temperature data.
可選地，流體通道包括若干個徑向呈扇形分布的扇形通道，所述流體媒介用於對所述靜電夾盤的溫度分布進行徑向調節。 Optionally, the fluid channel includes several radially fan-shaped channels, and the fluid medium is used to radially adjust the temperature distribution of the electrostatic chuck.
可選地，流體通道包括若干個環形通道，所述流體媒介用於對所述靜電夾盤的溫度分布進行周向調節。 Optionally, the fluid channel includes several annular channels, and the fluid medium is used to circumferentially adjust the temperature distribution of the electrostatic chuck.
可選地，流體媒介為冷卻氣體，所述冷卻氣體為氦氣或氮氣中的至少一種。 Optionally, the fluid medium is a cooling gas, and the cooling gas is at least one of helium or nitrogen.
為了達到上述目的，本發明的第二技術手段是提供一種等離子處理裝置，其包含反應腔及下電極組件。下電極組件設置於反應腔中。 In order to achieve the above object, the second technical means of the present invention is to provide a plasma processing device, which includes a reaction chamber and a lower electrode assembly. The lower electrode assembly is arranged in the reaction chamber.
為了達到上述目的，本發明的第三技術手段是提供一種等離子體處理裝置的工作方法，包括下列步驟：提供等離子體處理裝置；以及當等離子體處理裝置內進行等離子體刻蝕製程時，藉由流體媒介對靜電夾盤的溫度分布進行調節。 In order to achieve the above object, the third technical means of the present invention is to provide a working method of a plasma processing device, which includes the following steps: providing a plasma processing device; and when a plasma etching process is performed in the plasma processing device, by The fluid medium regulates the temperature distribution of the electrostatic chuck.
可選地，等離子體處理裝置的工作方法還包括下列步驟：當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量裝置提供溫度數據；以及藉由流體控制裝置依據溫度數據控制流體媒介的流速。 Optionally, the working method of the plasma processing device also includes the following steps: when the plasma etching process is performed in the plasma processing device, temperature data is provided through a plurality of temperature measuring devices; and the fluid control device is used according to the temperature data. Control the flow rate of fluid media.
可選地，等離子體處理裝置的工作方法還包括下列步驟：當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量片提供溫度數據；以及藉由流體控制裝置依據溫度數據對溫度不均勻的流體通道設定流體媒介的流速並固定，且後續相同的製程就按照該固定的流速進行調節。 Optionally, the working method of the plasma processing device further includes the following steps: when the plasma etching process is performed in the plasma processing device, temperature data is provided through a plurality of temperature measuring pieces; and the fluid control device is used according to the temperature data. The flow rate of the fluid medium is set and fixed for the fluid channel with uneven temperature, and subsequent identical processes are adjusted according to the fixed flow rate.
與習知技術相比，本發明藉由使用流體介質以徑向方式均衡加熱元件的不均勻性，對應於下面的加熱裝置的幾個流體通道可以用於提供溫度分布的徑向對稱，以達到對靜電夾盤的溫度分布進行調節的作用。 Compared with the prior art, the present invention equalizes the non-uniformity of the heating element in a radial manner by using a fluid medium. Several fluid channels corresponding to the underlying heating device can be used to provide radial symmetry of the temperature distribution to achieve Adjusts the temperature distribution of the electrostatic chuck.
於靜電鍵盤下方設置一流體循環層，該流體循環層內部設置容納流體媒介的流體通道，另一方面該流體通道可以呈扇形分布或環形分布，對靜電夾盤的溫度分布進行徑向或周向調節，從而調節基片從中心到邊緣的各種溫度曲線，以適應加工需求。 A fluid circulation layer is provided below the electrostatic keyboard. A fluid channel is provided inside the fluid circulation layer to accommodate the fluid medium. On the other hand, the fluid channel can be distributed in a fan shape or an annular shape to adjust the temperature distribution of the electrostatic chuck radially or circumferentially. , thereby adjusting various temperature curves of the substrate from the center to the edge to adapt to processing needs.
當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量片提供溫度數據；以及藉由流體控制裝置依據溫度數據對溫度不均勻的流體通道設定流體媒介的流速並固定，且後續相同的製程就按照該固定的流速進行調節，簡化了後續相同製程的調節過程。 When the plasma etching process is carried out in the plasma processing device, temperature data is provided through several temperature measurement slices; and the flow rate of the fluid medium is set and fixed in the fluid channel with uneven temperature by the fluid control device based on the temperature data, and Subsequent identical processes are adjusted according to the fixed flow rate, which simplifies the adjustment process of subsequent identical processes.
3:聚焦環 3: Focus ring
4:隔離環 4: Isolation ring
5:等離子體約束環 5: Plasma confinement ring
6:上接地環 6: Upper grounding ring
7:氣體噴淋頭 7:Gas sprinkler head
8:安裝基板 8:Install the base plate
9:頂蓋 9:Top cover
10:反應腔側壁 10: Reaction chamber side wall
11:接地環 11:Ground ring
100:下電極組件 100: Lower electrode assembly
101:待處理基片 101:Substrate to be processed
110:靜電夾盤 110:Electrostatic chuck
120:基座 120: base
121:冷卻層 121: Cooling layer
122:冷卻通道 122: Cooling channel
123:加熱層 123:Heating layer
124:加熱裝置 124:Heating device
130:流體循環層 130: Fluid circulation layer
131:流體通道 131:Fluid channel
132:扇形通道 132:Sector channel
132a:流體媒介入口 132a: Fluid medium inlet
132b:流體媒介出口 132b: Fluid media outlet
133:環形通道 133: Ring channel
140:循環泵 140: Circulation pump
200:等離子體處理裝置 200:Plasma treatment device
第1圖是本發明的下電極組件的第一示意圖；第2圖是第1圖中流體循環層的俯視圖；第3圖為第1圖中流體循環層的結構示意圖； 第4圖是本發明的下電極組件的第二示意圖；第5圖是第4圖中流體循環層的俯視圖；第6圖為本發明的等離子體處理裝置結構示意圖；第7圖為本發明的等離子處理裝置的工作方法的流程圖。 Figure 1 is a first schematic diagram of the lower electrode assembly of the present invention; Figure 2 is a top view of the fluid circulation layer in Figure 1; Figure 3 is a schematic structural diagram of the fluid circulation layer in Figure 1; Figure 4 is a second schematic diagram of the lower electrode assembly of the present invention; Figure 5 is a top view of the fluid circulation layer in Figure 4; Figure 6 is a schematic structural diagram of the plasma processing device of the present invention; Figure 7 is a schematic diagram of the structure of the plasma processing device of the present invention; Flow chart of the working method of the plasma treatment device.
為利瞭解本發明的特徵、內容與優點及其所能達成的功效，茲將本發明配合附圖，並以實施方式的表達形式詳細說明如下，而其中所使用的附圖，其主旨僅為示意及輔助說明書之用，未必為本發明實施後的真實比例與精準配置，故不應就所附的附圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請專利範圍。 In order to facilitate understanding of the characteristics, contents, advantages and effects achieved by the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and in the form of embodiments. The main purpose of the drawings used is only The schematics and auxiliary descriptions are not necessarily the actual proportions and precise configurations of the invention after implementation. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of the patent application for the actual implementation of the invention.
第1圖為下電極組件的第一示意圖，如第1圖所示，本發明提供一種下電極組件100，其包括靜電夾盤110、基座120、設置於基座120上的流體循環層130。 Figure 1 is a first schematic diagram of a lower electrode assembly. As shown in Figure 1, the present invention provides a lower electrode assembly 100, which includes an electrostatic chuck 110, a base 120, and a fluid circulation layer 130 disposed on the base 120. .
所述的靜電夾盤110用於吸附待處理基片101，基座120用於承載靜電夾盤110，基座120包括冷卻層121和位於冷卻層121上方的加熱層123，冷卻層121內設置冷卻通道122，加熱層123內設置加熱裝置124。 The electrostatic chuck 110 is used to adsorb the substrate 101 to be processed, and the base 120 is used to carry the electrostatic chuck 110. The base 120 includes a cooling layer 121 and a heating layer 123 located above the cooling layer 121. The cooling layer 121 is provided with A heating device 124 is provided in the cooling channel 122 and the heating layer 123.
需要說明的是，上述的加熱層123可以位於基座120的外部，即上述的加熱層123位於基座的冷卻層121上方。 It should be noted that the above-mentioned heating layer 123 may be located outside the base 120 , that is, the above-mentioned heating layer 123 is located above the cooling layer 121 of the base.
進一步的，所述的流體循環層130位於加熱層123上方，內部設置容納流體媒介的流體通道131，所述的流體媒介用於對靜電夾盤110的溫度分布進行調節。流體通道中的流體媒介既非加熱也非冷卻，而是藉由流動將靜電夾盤不同區域的熱量進行均衡，以達到對靜電夾盤的溫度分布進行調節的作用。 Further, the fluid circulation layer 130 is located above the heating layer 123, and a fluid channel 131 containing a fluid medium is provided inside. The fluid medium is used to adjust the temperature distribution of the electrostatic chuck 110. The fluid medium in the fluid channel neither heats nor cools, but balances the heat in different areas of the electrostatic chuck through flow to adjust the temperature distribution of the electrostatic chuck.
於實際應用時，該流體通道連接流體控制裝置，流體控制裝置依據溫度數據控制流體通道131中的流體媒介的流速或流動方向。 In practical applications, the fluid channel is connected to a fluid control device, and the fluid control device controls the flow rate or flow direction of the fluid medium in the fluid channel 131 based on the temperature data.
進一步地，為了獲取靜電夾盤110的溫度數據，是以靜電夾盤110內可設置若干個溫度測量裝置，再由若干個溫度測量裝置提供溫度數據。 Further, in order to obtain the temperature data of the electrostatic chuck 110, several temperature measuring devices can be installed in the electrostatic chuck 110, and then the several temperature measuring devices provide temperature data.
另一方面，也可以在靜電夾盤110與基座120之間設置若干個溫度測量裝置，再由若干個溫度測量裝置提供溫度數據。 On the other hand, several temperature measuring devices may also be provided between the electrostatic chuck 110 and the base 120, and then the several temperature measuring devices may provide temperature data.
值得一提的是，若未設置溫度測量裝置，則可以在待處理基片101貼上若干個溫度測量片，在待處理基片101進行製程處理時，由若干個溫度測量片取得溫度數據，因此可瞭解在所述製程處理時，待處理基片101的那些區域有溫度不均勻的現象，從而作為設定各個流體通道131中的流體媒介的流速的參考依據，並藉由固定設定後的流速以供後續相同製程處理時應用。 It is worth mentioning that if a temperature measuring device is not provided, several temperature measuring sheets can be affixed to the substrate 101 to be processed. When the substrate 101 is processed, temperature data can be obtained from the several temperature measuring sheets. Therefore, it can be understood that during the process, those areas of the substrate 101 to be processed have uneven temperatures, which can be used as a reference for setting the flow rate of the fluid medium in each fluid channel 131, and by fixing the set flow rate For subsequent application in the same process.
第2圖為第1圖中流體循環層的俯視圖，如第2圖所示，流體通道131可包括若干個徑向呈扇形分布的扇形通道132，該扇形通道的數量可以大於等於2個，圖中示出的數量為4個，每個扇形通道形成一個獨立的扇形區域。 Figure 2 is a top view of the fluid circulation layer in Figure 1. As shown in Figure 2, the fluid channel 131 can include several fan-shaped channels 132 distributed in a radial fan shape. The number of the fan-shaped channels can be greater than or equal to 2. Figure The number shown in is 4, and each sector channel forms an independent sector area.
更詳細地說，以4個扇形通道132為例，其中間設有一個流體媒介入口132a，每個扇形通道132的邊緣區域設有一個流體媒介出口132b，藉由控制不同扇形通道132內的流體媒介流速，實現對該區域的溫度的調節，例如，當該區域溫度較高時，流速要快，溫度較低時，流速可以調慢。流體媒介可以為冷卻液體，也可以為冷卻氣體，當所述流體媒介為氣體時，可以為氦氣或氮氣中的至少一種。流體媒介從入口到出口呈徑向流動，從而將下方不同加熱區域的溫度藉由流體媒介的流動進行均勻性調節，實現對基片的溫度分布進行徑向調節。然，上述僅為舉例，並不以此為限。 In more detail, taking four fan-shaped channels 132 as an example, a fluid medium inlet 132a is provided in the middle, and a fluid medium outlet 132b is provided in the edge area of each fan-shaped channel 132. By controlling the fluid in different fan-shaped channels 132 The medium flow rate can adjust the temperature of the area. For example, when the temperature in the area is higher, the flow rate should be faster, and when the temperature is lower, the flow rate can be adjusted slower. The fluid medium may be a cooling liquid or a cooling gas. When the fluid medium is a gas, it may be at least one of helium or nitrogen. The fluid medium flows radially from the inlet to the outlet, thereby uniformly adjusting the temperature of the different heating areas below through the flow of the fluid medium, thereby achieving radial adjustment of the temperature distribution of the substrate. However, the above are only examples and are not limited thereto.
第3圖為第1圖中流體循環層的結構示意圖，參見第3圖，上述的加熱裝置124可以採用交流加熱器，且在扇形通道的流體媒介入口及出口之間的 管路中配置一循環泵140，所述的循環泵140在不引起熱量損失的情況下使流體媒介緊密循環。較佳地，上述流體媒介為具有較高的汽化溫度的氣體或液體，且該流體具有電介質和良好的導熱性。 Figure 3 is a schematic structural diagram of the fluid circulation layer in Figure 1. Referring to Figure 3, the above-mentioned heating device 124 can use an AC heater, and between the fluid medium inlet and outlet of the fan-shaped channel A circulation pump 140 is disposed in the pipeline, and the circulation pump 140 tightly circulates the fluid medium without causing heat loss. Preferably, the fluid medium is a gas or liquid with a relatively high vaporization temperature, and the fluid has dielectric properties and good thermal conductivity.
以上結合附第1圖~3描述了根據本發明一種實施例的下電極組件。進一步地，本發明還可以應用於另一種結構的下電極組件。 The lower electrode assembly according to an embodiment of the present invention is described above with reference to the attached Figures 1 to 3. Furthermore, the present invention can also be applied to a lower electrode assembly of another structure.
如第4圖、第5圖所示，作為上述實施例的變形，上述的流體通道131可包括若干個環形通道133，每個環形通道133分別設有流體媒介入口和流體媒介出口，藉由控制不同環形通道133內的流體媒介流速，實現對該區域的溫度的調節，例如，當該區域溫度較高時，流速要快，溫度較低時，流速可以調慢。流體媒介可以為冷卻液體，也可以為冷卻氣體，當所述流體媒介為氣體時，可以為氦氣或氮氣中的至少一種。流體媒介從環形通道的入口到出口呈周向流動，從而將下方不同加熱區域的溫度藉由流體媒介的流動進行均勻性調節，實現對基片的溫度分布進行周向調節。 As shown in Figures 4 and 5, as a modification of the above embodiment, the above-mentioned fluid channel 131 may include several annular channels 133. Each annular channel 133 is respectively provided with a fluid medium inlet and a fluid medium outlet. By controlling The flow rate of the fluid medium in different annular channels 133 realizes the adjustment of the temperature in the area. For example, when the temperature in the area is higher, the flow rate should be faster, and when the temperature is lower, the flow rate can be adjusted slower. The fluid medium may be a cooling liquid or a cooling gas. When the fluid medium is a gas, it may be at least one of helium or nitrogen. The fluid medium flows circumferentially from the inlet to the outlet of the annular channel, thereby uniformly adjusting the temperature of the different heating areas below through the flow of the fluid medium, thereby achieving circumferential adjustment of the temperature distribution of the substrate.
值得說明的是，上述藉由調節流體媒介流速，進而調節靜電鍵盤的溫度分布的方式還可適用於加熱裝置為非環形分布，當該加熱裝置為矩陣狀分布時，在加熱裝置的上方設置一流體通道，該流體通道設置於加熱裝置與靜電夾盤之間，對應每個流體通道分別設有流體媒介入口和流體媒介出口，當靜電夾盤的某一區域溫度較高時，調快該區域對應流體通道的流體媒介流速，當靜電夾盤的某一區域溫度較低時，調慢該區域對應流體通道的流體媒介流速。 It is worth noting that the above-mentioned method of adjusting the temperature distribution of the electrostatic keyboard by adjusting the flow rate of the fluid medium can also be applied when the heating device is distributed in a non-circular shape. When the heating device is distributed in a matrix, a heating device is provided above the heating device. Fluid channel, which is arranged between the heating device and the electrostatic chuck. Corresponding to each fluid channel, there is a fluid medium inlet and a fluid medium outlet. When the temperature of a certain area of the electrostatic chuck is higher, the speed of that area is adjusted. Corresponding to the fluid medium flow rate of the fluid channel, when the temperature of a certain area of the electrostatic chuck is low, the flow rate of the fluid medium corresponding to the fluid channel in this area is slowed down.
請參閱第6圖，其是本發明的等離子處理裝置的示意圖。如圖所示，本發明提供了一種等離子體處理裝置200，其包括反應腔及下電極組件100，下電極組件100位於反應腔內。 Please refer to Figure 6, which is a schematic diagram of the plasma processing device of the present invention. As shown in the figure, the present invention provides a plasma processing device 200, which includes a reaction chamber and a lower electrode assembly 100. The lower electrode assembly 100 is located in the reaction chamber.
承上述，等離子體處理裝置200適用於電容耦合等離子體刻蝕裝置(如第6圖所示)或者電感耦合等離子體刻蝕裝置。 Based on the above, the plasma processing apparatus 200 is suitable for a capacitively coupled plasma etching apparatus (as shown in FIG. 6 ) or an inductively coupled plasma etching apparatus.
上述的等離子處理裝置用於電容耦合等離子體刻蝕裝置，參見第6圖，該等離子處理裝置還包括：電容上電極組件，所述電容上電極組件包括：氣體噴淋頭7，用於引入反應氣體同時作為反應腔的上電極；安裝基板8，位於氣體噴淋頭7的上方，氣體噴淋頭藉由安裝基板與反應腔的頂蓋9實現固定連接；上接地環6，環繞氣體噴淋頭設置，當射頻電源施加於下電極時，在射頻電源-下電極-等離子體-上電極-上接地環之間形成射頻回路；上述的下電極組件還可以包括：聚焦環3，環繞基片設置，用於對基片邊緣區域的製程處理效果進行調節；隔離環4，環繞基座設置，用於實現基座與下接地環的隔離；等離子體約束環5，位於基座與反應腔側壁10之間，用於將等離子體限制在反應區域同時允許氣體藉由；接地環11，位於等離子體約束環下方，作用是提供電場屏蔽，避免等離子體洩露。 The above-mentioned plasma processing device is used in a capacitively coupled plasma etching device. See Figure 6. The plasma processing device also includes: a capacitor upper electrode assembly. The capacitor upper electrode assembly includes: a gas shower head 7 for introducing reactions. The gas also serves as the upper electrode of the reaction chamber; the mounting base plate 8 is located above the gas shower head 7, and the gas shower head is fixedly connected to the top cover 9 of the reaction chamber through the mounting base plate; the upper grounding ring 6 surrounds the gas shower The head is set, when the radio frequency power is applied to the lower electrode, a radio frequency loop is formed between the radio frequency power - the lower electrode - the plasma - the upper electrode - the upper ground ring; the above-mentioned lower electrode assembly can also include: a focusing ring 3, surrounding the substrate Set, used to adjust the process processing effect in the edge area of the substrate; Isolation ring 4, set around the base, used to achieve isolation between the base and the lower ground ring; Plasma confinement ring 5, located between the base and the side wall of the reaction chamber 10, used to confine the plasma in the reaction area while allowing gas to pass through; the grounding ring 11, located below the plasma confinement ring, serves to provide electric field shielding to avoid plasma leakage.
高頻射頻電源，藉由一高頻射頻匹配網絡施加到上電極或下電極上，用於控制反應腔內的等離子體濃度，偏置射頻電源，通常施加於基座上，用於控制等離子體的方向。 High-frequency RF power is applied to the upper electrode or lower electrode through a high-frequency RF matching network to control the plasma concentration in the reaction chamber. Bias RF power is usually applied to the base to control the plasma. direction.
本發明實施例提供的等離子處理裝置，與上述實施例提供的下電極組件具有相同的技術特徵，所以也能解決相同的技術問題，達到相同的技術效果。 The plasma processing device provided by the embodiment of the present invention has the same technical features as the lower electrode assembly provided by the above embodiment, so it can also solve the same technical problem and achieve the same technical effect.
請參閱第7圖，其是本發明的等離子處理裝置的工作方法的流程圖。如圖所示，本發明的第三實施例是提供一種等離子體處理裝置的工作方法，包括下列步驟： Please refer to Figure 7, which is a flow chart of the working method of the plasma processing device of the present invention. As shown in the figure, the third embodiment of the present invention provides a working method of a plasma processing device, which includes the following steps:
在步驟S61中：提供等離子體處理裝置。 In step S61: providing a plasma processing device.
在步驟S62中：當等離子體處理裝置內進行等離子體刻蝕製程時，藉由流體媒介對靜電夾盤的溫度分布進行調節，藉由流體媒介的流動將靜電夾盤不同區域的熱量進行均衡，以達到對靜電夾盤的溫度分布進行調節的作用。 In step S62: When the plasma etching process is performed in the plasma processing device, the temperature distribution of the electrostatic chuck is adjusted through the fluid medium, and the heat in different areas of the electrostatic chuck is balanced through the flow of the fluid medium. To adjust the temperature distribution of the electrostatic chuck.
進一步地，等離子體處理裝置的工作方法對於溫度數據的取得及應用還包括下列步驟：當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量裝置提供溫度數據。 Furthermore, the working method of the plasma processing device also includes the following steps for obtaining and applying temperature data: when the plasma etching process is performed in the plasma processing device, temperature data is provided by a plurality of temperature measuring devices.
藉由流體控制裝置依據溫度數據控制流體媒介的流速。 The flow rate of the fluid medium is controlled by the fluid control device based on the temperature data.
另一方面，等離子體處理裝置的工作方法也可包括下列步驟：當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量片提供溫度數據。 On the other hand, the working method of the plasma processing device may also include the following steps: when the plasma etching process is performed in the plasma processing device, temperature data is provided through a plurality of temperature measuring chips.
藉由流體控制裝置依據溫度數據對溫度不均勻的流體通道設定流體媒介的流速並固定，且後續相同的製程就按照該固定的流速進行調節。 The fluid control device sets and fixes the flow rate of the fluid medium in the fluid channel with uneven temperature based on the temperature data, and subsequent identical processes are adjusted according to the fixed flow rate.
與習知技術相比，本發明藉由使用流體介質以徑向方式均衡加熱元件的不均勻性，對應於下面的加熱裝置的幾個流體通道可以用於提供溫度分布的徑向對稱，以達到隊靜電夾盤的溫度分布進行調節的功效。 Compared with the prior art, the present invention equalizes the non-uniformity of the heating element in a radial manner by using a fluid medium. Several fluid channels corresponding to the underlying heating device can be used to provide radial symmetry of the temperature distribution to achieve The function of adjusting the temperature distribution of the electrostatic chuck.
於靜電鍵盤下方設置一流體循環層，該流體循環層內部設置容納流體媒介的流體通道，另一方面該流體通道可以呈扇形分布或環形分布，對靜電夾盤的溫度分布進行徑向或周向調節，從而調節基片從中心到邊緣的各種溫度曲線，以適應加工需求。 A fluid circulation layer is provided below the electrostatic keyboard. A fluid channel is provided inside the fluid circulation layer to accommodate the fluid medium. On the other hand, the fluid channel can be distributed in a fan shape or an annular shape to adjust the temperature distribution of the electrostatic chuck radially or circumferentially. , thereby adjusting various temperature curves of the substrate from the center to the edge to adapt to processing needs.
當等離子體處理裝置內進行等離子體刻蝕製程時，藉由若干個溫度測量片提供溫度數據；以及藉由流體控制裝置依據溫度數據對溫度不均勻的 流體通道設定流體媒介的流速並固定，且後續相同的製程就按照該固定的流速進行調節，簡化了後續相同製程的調節過程。 When the plasma etching process is carried out in the plasma processing device, temperature data is provided through several temperature measurement slices; and the fluid control device detects temperature unevenness based on the temperature data. The fluid channel sets and fixes the flow rate of the fluid medium, and subsequent identical processes are adjusted according to the fixed flow rate, which simplifies the adjustment process of subsequent identical processes.
儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.
100:下電極組件 100: Lower electrode assembly
101:待處理基片 101:Substrate to be processed
110:靜電夾盤 110:Electrostatic chuck
120:基座 120: base
121:冷卻層 121: Cooling layer
122:冷卻通道 122: Cooling channel
123:加熱層 123:Heating layer
124:加熱裝置 124:Heating device
130:流體循環層 130: Fluid circulation layer
131:流體通道 131:Fluid channel
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911393006.9 | 2019-12-30 | ||
| CN201911393006.9A CN113130279B (en) | 2019-12-30 | 2019-12-30 | Lower electrode assembly, plasma processing device and working method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202125574A TW202125574A (en) | 2021-07-01 |
| TWI817056B true TWI817056B (en) | 2023-10-01 |
Family
ID=76767610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109139421A TWI817056B (en) | 2019-12-30 | 2020-11-12 | Lower electrode assembly, plasma processing device using same and working method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113130279B (en) |
| TW (1) | TWI817056B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN114121584B (en) * | 2021-11-22 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Bottom electrode assembly, semiconductor processing equipment and bottom electrode condensation prevention method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201339781A (en) * | 2011-11-15 | 2013-10-01 | Tokyo Electron Ltd | Temperature control system, semiconductor manufacturing device, and temperature control method |
| WO2015179492A1 (en) * | 2014-05-20 | 2015-11-26 | The Johns Hopkins University | Shape-controlled nucleic acid nanoparticles for in vivo delivery of nucleic acid therapeutics |
| TW201737408A (en) * | 2016-03-22 | 2017-10-16 | Tokyo Electron Ltd | Processing apparatus for workpiece |
| TWI618186B (en) * | 2014-07-23 | 2018-03-11 | 應用材料股份有限公司 | Tunable temperature controlled substrate support assembly |
| US20180122680A1 (en) * | 2016-10-31 | 2018-05-03 | Samsung Electronics Co., Ltd. | Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same |
| TW201947652A (en) * | 2018-05-10 | 2019-12-16 | 美商美光科技公司 | Tools and systems for processing a semiconductor device structure, and related methods |
| TW202020969A (en) * | 2018-08-15 | 2020-06-01 | 瑞士商艾維太克股份有限公司 | Method and apparatus for low particle plasma etching |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4209057B2 (en) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | Ceramic heater, substrate processing apparatus and substrate processing method using the same |
| KR100557675B1 (en) * | 2003-12-22 | 2006-03-10 | 어댑티브프라즈마테크놀로지 주식회사 | Chuck base having cooling path for cooling wafer |
| JP5222442B2 (en) * | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and temperature control method for substrate to be processed |
| CN202230996U (en) * | 2011-09-01 | 2012-05-23 | 中微半导体设备(上海)有限公司 | Electrostatic chuck capable of carrying out regional temperature control |
| US8937800B2 (en) * | 2012-04-24 | 2015-01-20 | Applied Materials, Inc. | Electrostatic chuck with advanced RF and temperature uniformity |
| US9070536B2 (en) * | 2012-04-24 | 2015-06-30 | Applied Materials, Inc. | Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface |
| US8809197B2 (en) * | 2012-08-29 | 2014-08-19 | Tokyo Electron Limited | Plasma etching apparatus and control method |
| CN103794527B (en) * | 2012-10-30 | 2016-08-24 | 中微半导体设备(上海)有限公司 | Electrostatic chuck heating means |
| US20140116622A1 (en) * | 2012-10-31 | 2014-05-01 | Semes Co. Ltd. | Electrostatic chuck and substrate processing apparatus |
| CN104078300A (en) * | 2013-03-28 | 2014-10-01 | 中微半导体设备(上海)有限公司 | Plasma processing cavity and base station thereof |
| CN104167344B (en) * | 2013-05-17 | 2017-02-08 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and base station thereof |
| US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
| CN104681380B (en) * | 2013-11-29 | 2017-07-07 | 中微半导体设备(上海)有限公司 | A kind of electrostatic chuck and its plasma processing chamber |
| JP6442296B2 (en) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | Mounting table and plasma processing apparatus |
| KR20160015510A (en) * | 2014-07-30 | 2016-02-15 | 삼성전자주식회사 | Electrostatic chuck assemblies, semiconducotor fabricating apparatus having the same, and plasma treatment methods using the same |
| CN106935468A (en) * | 2015-12-31 | 2017-07-07 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor |
| CN107331595B (en) * | 2016-04-29 | 2019-08-13 | 中微半导体设备(上海)股份有限公司 | For plasma treatment appts and its temprature control method and calibration method |
| JP6832171B2 (en) * | 2017-01-24 | 2021-02-24 | 東京エレクトロン株式会社 | Plasma processing method including cleaning of the inside of the chamber body of the plasma processing device |
| JP6971183B2 (en) * | 2018-03-23 | 2021-11-24 | 新光電気工業株式会社 | Board fixing device |
| JP7054642B2 (en) * | 2018-04-06 | 2022-04-14 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
-
2019
- 2019-12-30 CN CN201911393006.9A patent/CN113130279B/en active Active
-
2020
- 2020-11-12 TW TW109139421A patent/TWI817056B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201339781A (en) * | 2011-11-15 | 2013-10-01 | Tokyo Electron Ltd | Temperature control system, semiconductor manufacturing device, and temperature control method |
| WO2015179492A1 (en) * | 2014-05-20 | 2015-11-26 | The Johns Hopkins University | Shape-controlled nucleic acid nanoparticles for in vivo delivery of nucleic acid therapeutics |
| TWI618186B (en) * | 2014-07-23 | 2018-03-11 | 應用材料股份有限公司 | Tunable temperature controlled substrate support assembly |
| TW201737408A (en) * | 2016-03-22 | 2017-10-16 | Tokyo Electron Ltd | Processing apparatus for workpiece |
| US20180122680A1 (en) * | 2016-10-31 | 2018-05-03 | Samsung Electronics Co., Ltd. | Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same |
| TW201947652A (en) * | 2018-05-10 | 2019-12-16 | 美商美光科技公司 | Tools and systems for processing a semiconductor device structure, and related methods |
| TW202020969A (en) * | 2018-08-15 | 2020-06-01 | 瑞士商艾維太克股份有限公司 | Method and apparatus for low particle plasma etching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113130279B (en) | 2023-09-29 |
| TW202125574A (en) | 2021-07-01 |
| CN113130279A (en) | 2021-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10593520B2 (en) | Temperature adjusting apparatus and method for a focus ring | |
| TWI651798B (en) | Mounting table and plasma processing device | |
| JP5974054B2 (en) | Temperature controlled hot edge ring assembly | |
| TWI817056B (en) | Lower electrode assembly, plasma processing device using same and working method thereof | |
| JP4176848B2 (en) | Substrate support and processing apparatus | |
| TWI481297B (en) | Method and apparatus for controlling spatial temperature distribution | |
| US8734664B2 (en) | Method of differential counter electrode tuning in an RF plasma reactor | |
| TWM448051U (en) | Electrostatic chuck capable of sectionally regulating temperature | |
| CN108242382A (en) | Plasma processing apparatus | |
| TWI406348B (en) | Dynamic temperature backside gas control for improved within-substrate process uniformity | |
| JP2013145806A (en) | Plasma processing apparatus and temperature control method of heater | |
| TWI604526B (en) | Plasma processing device and adjustment method for improving etching symmetry | |
| TW202119526A (en) | Temperature adjusting device | |
| JP6240532B2 (en) | Electrostatic chuck temperature control method | |
| US5859408A (en) | Apparatus for uniformly heating a substrate | |
| TW201541536A (en) | Plasma processing apparatus and electrostatic chuck thereof | |
| JP5325457B2 (en) | Plasma processing equipment | |
| TW202025380A (en) | Plasma processing device and substrate support base for the same for enabling local substrate temperature of each area to be more uniform and enhancing product yield of substrates | |
| JP5430192B2 (en) | Temperature control apparatus, temperature control method, substrate processing apparatus, and counter electrode | |
| JP5696183B2 (en) | Plasma processing equipment | |
| CN112951694B (en) | Plasma processing apparatus and method for processing semiconductor wafer | |
| TWI809233B (en) | RF electrode assembly for plasma treatment equipment and plasma treatment equipment | |
| TWI771714B (en) | Plasma processing device | |
| TW202320204A (en) | Installation base, shower head assembly, temperature control method of shower head, and plasma processing device to improve the temperature controllability of the shower head, reduce the power output of the heater, and prolong the service life of the heater | |
| JP2023080674A (en) | Plasma processing apparatus and method for using plasma processing apparatus |