CN202230996U - Electrostatic chuck capable of carrying out regional temperature control - Google Patents
Electrostatic chuck capable of carrying out regional temperature control Download PDFInfo
- Publication number
- CN202230996U CN202230996U CN201120325891XU CN201120325891U CN202230996U CN 202230996 U CN202230996 U CN 202230996U CN 201120325891X U CN201120325891X U CN 201120325891XU CN 201120325891 U CN201120325891 U CN 201120325891U CN 202230996 U CN202230996 U CN 202230996U
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- subregion
- electrostatic chuck
- temperature
- wafer
- calandria
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to an electrostatic chuck capable of carrying out the regional temperature control. A pedestal is provided with two chillers which correspondingly control the central region temperature and the edge region temperature of a wafer. A heating member is arranged in an electrostatic chuck subregion which is corresponding to the farthest edge of the wafer. The heating member is arranged on the top of a dielectric layer and gets close to the position of the wafer. The temperature of the wafer edge can be increased rapidly and flexibly via the heating member, and under the condition that other reaction conditions do not change, the processing speeds of the wafer edge etching reaction, deposition reaction, and the like can be accelerated, so the influence caused by the uneven original gas distribution on the wafer along the radial direction is offset, and finally the more even processing effects on the center and the edge of the wafer can be obtained.
Description
Technical field
The utility model relates to a kind of electrostatic chuck, but the electrostatic chuck of particularly a kind of temperature subregion regulation and control.
Background technology
In the manufacture process of semiconductor device, on wafer, deposit, during PROCESS FOR TREATMENT such as etching, the electrostatic force that generally produces through electrostatic chuck (Electrostatic chuck is called for short ESC) supports wafer during handling and is fixing.
Electrostatic chuck is usually located at the bottom of vacuum treatment chamber, generally is included in the electrode of burying underground in the ceramic dielectric layers; Through on this electrode, applying direct current, and then produce electrostatic charge and come the wafer placed on the sticking dielectric layer.Pedestal is set below said dielectric layer to be supported; Be provided with heat exchanger (chiller) in the said pedestal,, heat or cool off the temperature of said electrostatic chuck and then the temperature of control wafer by the fluid of wherein flowing through promptly through offering some passages.
Yet, for example receive the influence pockety of treatment chamber reaction gases or plasma, tend to make the zones of different on the wafer surface to have different processing speeds; For zones of different along the wafer radial arrangement; This inhomogeneous processing is especially obvious; For example can make that the processing speed of wafer central region is very fast, and the processing speed of wafer edge region is slower, can causes the performance of the semiconductor device that zones of different forms on the wafer different like this.Prior art often adopt the gas flow that changes Waffer edge and central area or or the distribution of kind realize the homogeneity of final treatment effect; But this method requires air inlet to have independent adjustable multi-region gas distributor; And the surface is undesirable through the debugging that the difference of these gas flows after the gaseous diffusion or kind also part is weakened final treatment effect from the gas distributor to the wafer process, be difficult in the processing technology of reality through fast directly debugging obtain desirable processing effect.Prior art also has through the homogeneity of regulating the electric field distribution on whole machining process surface raising treatment effect; Can cause plasma distribution to change through regulating electric field, but chemical reaction is accounted for leading processing technology actual influence not quite can not play good regulating action.Can come the method or the device of quick adjustment processing homogeneity through other method so press in the industry.
The utility model content
But the purpose of the utility model provides a kind of electrostatic chuck of temperature subregion regulation and control; Position corresponding with Waffer edge in dielectric layer has been buried calandria underground; Temperature through improving Waffer edge is accelerated this regional processing reaction speed, thereby offsets the radially influence of inhomogeneous processing of wafer; Cooperate with it, also in the pedestal of electrostatic chuck, be provided with two cover heat exchangers, further realize correspondence adjustment center wafer and fringe region temperature.
In order to achieve the above object, but the technical scheme of the utility model provides a kind of electrostatic chuck of temperature subregion regulation and control, comprises the dielectric layer that the thermal conductive ceramic material is processed, and it is fixedly installed on the pedestal of vacuum treatment chamber bottom; Apply direct current on the electrode of in said dielectric layer, burying underground, come the wafer placed on the said dielectric layer of sticking thereby produce electrostatic force;
In said electrostatic chuck, also be provided with calandria; Said calandria is arranged in the said dielectric layer, is positioned to bury underground on the electrode; And said calandria is around the edge placement of said dielectric layer, thereby corresponding with the marginal position of said wafer.
Corresponding first subregion is set, and second subregion is set at the edge of said dielectric layer and pedestal at the center of said dielectric layer and pedestal, make said second subregion be looped around the peripheral of said first subregion and with its concentric setting;
Said first subregion and second subregion, corresponding with the central area and the fringe region of said wafer; Said calandria is arranged in the dielectric layer of said second subregion.
In first subregion and second subregion of said pedestal (12), also be respectively arranged with the independent controlled heat exchanger of a cover; Said heat exchanger or calandria separately unlatching or close, make the temperature of first subregion, second subregion obtain adjustment respectively, and and then the temperature of wafer central region and fringe region adjusted respectively.
Offer some passages in the said pedestal, said some passages lay respectively at first subregion, second subregion of pedestal; Through heating or cooling off the fluid in the said passage, improve or reduce the temperature that respective partition is set, thereby the temperature of wafer respective regions is adjusted; Fluid in the passage that corresponding zones of different is offered is independent control.
Said calandria is to be processed by stratie; Power one timing that applies on the said stratie, the amplitude that its temperature raises was directly proportional with heating time; If heating time one regularly, the intensification amplitude is directly proportional with power.
Said calandria is the heater coil that is formed by the tungsten filament coiling.
Said electrostatic chuck comprises a radiating area that is positioned at upper surface, and radiating area comprises a plurality of gas communication passages that are positioned at the electrostatic chuck upper surface, and said calandria is around the radiating area of electrostatic chuck.
Compared with prior art, but the electrostatic chuck of the said temperature subregion regulation and control of the utility model, and its advantage is: the utility model is provided with two cover heat exchangers, and the temperature that corresponds to center wafer and fringe region is controlled; And in the subregion at the edge of corresponding wafer, be provided with said calandria at least; Promote the temperature of Waffer edge flexibly apace through said calandria; Under the constant situation of other reaction conditions; The processing speed of Waffer edge being carried out reactions such as etching, deposition is accelerated, and the influence that the inhomogeneous grade of original distribution of gas causes thereby the counteracting wafer directly makes progress finally obtains more uniform processing effect at the center and the edge of wafer.
Description of drawings
But the structural representation of the electrostatic chuck of Fig. 1 to be the utility model said temperature subregion regulation and control;
Fig. 2 is the vertical view of the said electrostatic chuck of the utility model.
Embodiment
Embodiment below in conjunction with description of drawings the utility model.
Cooperation is referring to Fig. 1, shown in Figure 2, and the described electrostatic chuck of the utility model comprises the dielectric layer 11 that the thermal conductive ceramic material is processed, and it is arranged on the pedestal 12 of vacuum treatment chamber bottom.Said pedestal 12 is that the edge is stair-stepping disc structure; The area of said dielectric layer 11 is equal to or slightly less than the area that is placed on the wafer 50 on this dielectric layer 11.Apply direct current on the electrode of in said dielectric layer 11, burying underground 60, come the said wafer 50 of sticking thereby produce electrostatic charge.
Correspondence has been divided some subregions on dielectric layer 11 and pedestal 12, for example can be radially to divide first subregion 21 and second subregion 22, said second subregion 22 be looped around the peripheral of said first subregion 21 and with its concentric setting; Said first subregion 21 and second subregion 22, corresponding with the central area 51 and the fringe region 52 of wafer on the electrostatic chuck 50.
In first, second subregion 21 and 22 of pedestal 12, be provided with the independent controlled heat exchanger (chiller) 31,32 of a cover separately.Said heat exchanger can be the some passages that are opened in the said pedestal 12; Through heating or cool off the fluid in this passage; Improve or reduce the temperature of electrostatic chuck respective partition, thereby can adjust respectively the temperature of wafer 50 centers and fringe region.
In other embodiments, the number of partitions of said electrostatic chuck can be not limited to above-mentioned two, for example can be on electrostatic chuck radially concentric be furnished with more multi partition.Perhaps, on said electrostatic chuck, also can carry out subregion according to other modes.Corresponding configuration heat exchanger or calandria or both combinations in different subregions; Through the independent said heat exchanger of control or calandria separately unlatching or close, perhaps can both adjust respectively the subregion temperature through the flow of heat-conducting fluid in the independent control heat exchanger.
Preferably, in the subregion at the edge of corresponding wafer, be provided with said calandria at least; Compare the position of heat exchanger in this subregion, make said calandria in the horizontal direction more near the edge of wafer.Because in the vertical direction, said calandria than said heat exchanger more near said wafer, faster for the temperature increase speed of its fringe region, also more flexible.In the plasma treatment chamber of existing capacitive coupling type (CCP), be that mid portion is greater than marginal portion concentration owing to the reason of physical structure is applying the plasma distribution that produces behind the high-frequency radio frequency electric field; For the treatment effect that obtains homogeneous need be at gas flow; Reactant species, perhaps compensatory correction is done in aspect such as temperature.So prior art is not because electrostatic chuck contains calandria and can't on temperature, revise, the treatment effect that obtain homogeneous need could obtain in the very big concession of others do.The utility model has added a calandria at the upper marginal position of electrostatic chuck can effectively realize the adjusting significantly to wafer surface temperature, low-cost and effectively improved the uniformity to wafer process.The upper surface zone line of prior art electrostatic chuck fixed wafer comprises that the passage of a plurality of refrigerating gases such as helium (He) is to derive unnecessary heat on the wafer; Directly taken away if imbed the heat of heater generation at zone line, can't realize the goal of the invention of the utility model by the helium of these heat conduction.So prior art is not distinguished control to the surface temperature of electrostatic chuck.The utility model recognizes that this unheeded may command blind area has proposed at the upper surface of edges of electrostatic chuck calandria to be set; Make calandria be positioned at DC electrode top and, cooperate the multi-region heat exchanger of independent control in the pedestal can improve Temperature Distribution greatly again on the entire wafer surface around the gas communication passage of radiating area.
Under the constant situation of other reaction conditions; Promote the temperature of Waffer edge through said calandria; Can make this fringe region carry out the processing speed quickening of reactions such as etching; Thereby the influence that the inhomogeneous grade of original distribution of gas that directly makes progress the counteracting wafer causes finally obtains more uniform processing effect at the center and the edge of wafer.
Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection range of the utility model should be limited appended claim.
Claims (7)
1. but the electrostatic chuck of temperature subregion regulation and control comprises the dielectric layer (11) that the thermal conductive ceramic material is processed, and it is fixedly installed on the pedestal (12) of vacuum treatment chamber bottom; Apply direct current on the electrode of in said dielectric layer (11), burying underground (60), come the said dielectric layer of sticking (11) to go up the wafer of placing (50), it is characterized in that thereby produce electrostatic force,
In said electrostatic chuck, also be provided with calandria (40); Said calandria (40) is arranged in the said dielectric layer (11), is positioned to bury underground on the electrode (60); And said calandria (40) is around the edge placement of said dielectric layer (11), thereby corresponding with the marginal position of said wafer (50).
2. but the electrostatic chuck of temperature subregion regulation and control according to claim 1 is characterized in that,
Correspondence is provided with first subregion (21) at the center of said dielectric layer (11) and pedestal (12); And second subregion (22) is set at the edge of said dielectric layer (11) and pedestal (12), make said second subregion (22) be looped around the peripheral of said first subregion (21) and be provided with its concentric;
Said first subregion (21) and second subregion (22), corresponding with the central area (51) and the fringe region (52) of said wafer (50); Said calandria (40) is arranged in the dielectric layer (11) of said second subregion (22).
But 3. like the electrostatic chuck of the said temperature subregion regulation and control of claim 2, it is characterized in that,
In first subregion (21) and second subregion (22) of said pedestal (12), also be respectively arranged with the independent controlled heat exchanger of a cover; Said heat exchanger or calandria separately unlatching or close, make the temperature of first subregion (21), second subregion (22) obtain adjustment respectively, and and then the temperature of wafer (50) central area (51) and fringe region (52) adjusted respectively.
But 4. like the electrostatic chuck of the said temperature subregion regulation and control of claim 3, it is characterized in that,
Said pedestal offers some passages in (12), and said some passages lay respectively at first subregion (21), second subregion (22) of pedestal (12); Through heating or cooling off the fluid in the said passage, improve or reduce the temperature that respective partition is set, thereby the temperature of wafer (50) respective regions is adjusted; Fluid in the passage that corresponding zones of different is offered is independent control.
But 5. like the electrostatic chuck of any said temperature subregion regulation and control in the claim 1 ~ 4, it is characterized in that,
Said calandria (40) is to be processed by stratie; Power one timing that applies on the said stratie, the amplitude that its temperature raises was directly proportional with heating time; If heating time one regularly, the intensification amplitude is directly proportional with power.
But 6. like the electrostatic chuck of the said temperature subregion regulation and control of claim 5, it is characterized in that,
Said calandria (40) is the heater coil that is formed by the tungsten filament coiling.
But 7. like the electrostatic chuck of the said temperature subregion regulation and control of claim 5, it is characterized in that,
Said electrostatic chuck comprises a radiating area that is positioned at upper surface, and radiating area comprises a plurality of gas communication passages that are positioned at the electrostatic chuck upper surface, and said calandria (40) is around the radiating area of electrostatic chuck.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120325891XU CN202230996U (en) | 2011-09-01 | 2011-09-01 | Electrostatic chuck capable of carrying out regional temperature control |
| TW101205283U TWM448051U (en) | 2011-09-01 | 2012-03-23 | Electrostatic chuck capable of sectionally regulating temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120325891XU CN202230996U (en) | 2011-09-01 | 2011-09-01 | Electrostatic chuck capable of carrying out regional temperature control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202230996U true CN202230996U (en) | 2012-05-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120325891XU Expired - Lifetime CN202230996U (en) | 2011-09-01 | 2011-09-01 | Electrostatic chuck capable of carrying out regional temperature control |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN202230996U (en) |
| TW (1) | TWM448051U (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103578899A (en) * | 2012-08-06 | 2014-02-12 | 中微半导体设备(上海)有限公司 | Plasma processing device and electro static chuck thereof |
| CN104282611A (en) * | 2013-07-09 | 2015-01-14 | 中微半导体设备(上海)有限公司 | Plasma processing cavity and static chuck thereof |
| CN104752130A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma-processing device and electrostatic chuck thereof |
| CN105340073A (en) * | 2013-07-04 | 2016-02-17 | Ev集团E·索尔纳有限责任公司 | Method and device for treating a substrate surface |
| CN105514016A (en) * | 2014-09-23 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and semiconductor processing device |
| CN108028220A (en) * | 2016-08-10 | 2018-05-11 | 日本碍子株式会社 | Ceramic heater |
| CN110600419A (en) * | 2019-09-20 | 2019-12-20 | 上海华力微电子有限公司 | Electrostatic chuck and using method thereof |
| CN113035683A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113950541A (en) * | 2019-05-28 | 2022-01-18 | 硅电子股份公司 | Method for depositing an epitaxial layer on the front side of a wafer and device for carrying out said method |
| CN117855020A (en) * | 2024-03-04 | 2024-04-09 | 上海谙邦半导体设备有限公司 | Wafer plasma photoresist removing device with adjustable temperature |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113170535B (en) * | 2019-01-25 | 2023-07-07 | 日本碍子株式会社 | Ceramic heater |
-
2011
- 2011-09-01 CN CN201120325891XU patent/CN202230996U/en not_active Expired - Lifetime
-
2012
- 2012-03-23 TW TW101205283U patent/TWM448051U/en not_active IP Right Cessation
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103578899B (en) * | 2012-08-06 | 2016-08-24 | 中微半导体设备(上海)有限公司 | Apparatus for processing plasma and electrostatic chuck thereof |
| CN103578899A (en) * | 2012-08-06 | 2014-02-12 | 中微半导体设备(上海)有限公司 | Plasma processing device and electro static chuck thereof |
| CN105340073A (en) * | 2013-07-04 | 2016-02-17 | Ev集团E·索尔纳有限责任公司 | Method and device for treating a substrate surface |
| CN104282611A (en) * | 2013-07-09 | 2015-01-14 | 中微半导体设备(上海)有限公司 | Plasma processing cavity and static chuck thereof |
| CN104752130A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma-processing device and electrostatic chuck thereof |
| CN105514016B (en) * | 2014-09-23 | 2019-10-29 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
| CN105514016A (en) * | 2014-09-23 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and semiconductor processing device |
| CN108028220B (en) * | 2016-08-10 | 2022-02-25 | 日本碍子株式会社 | Ceramic heater |
| CN108028220A (en) * | 2016-08-10 | 2018-05-11 | 日本碍子株式会社 | Ceramic heater |
| CN113950541A (en) * | 2019-05-28 | 2022-01-18 | 硅电子股份公司 | Method for depositing an epitaxial layer on the front side of a wafer and device for carrying out said method |
| CN113950541B (en) * | 2019-05-28 | 2024-06-11 | 硅电子股份公司 | Method for depositing epitaxial layers on the front side of a wafer and device for carrying out the method |
| CN110600419A (en) * | 2019-09-20 | 2019-12-20 | 上海华力微电子有限公司 | Electrostatic chuck and using method thereof |
| CN113035683A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
| CN113035683B (en) * | 2019-12-25 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN117855020A (en) * | 2024-03-04 | 2024-04-09 | 上海谙邦半导体设备有限公司 | Wafer plasma photoresist removing device with adjustable temperature |
| CN117855020B (en) * | 2024-03-04 | 2024-05-07 | 上海谙邦半导体设备有限公司 | Wafer plasma photoresist removing device with adjustable temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM448051U (en) | 2013-03-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Electrostatic chuck capable of carrying out regional temperature control Effective date of registration: 20150202 Granted publication date: 20120523 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20120523 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120523 |