TWI804941B - Current sensor - Google Patents
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- TWI804941B TWI804941B TW110128351A TW110128351A TWI804941B TW I804941 B TWI804941 B TW I804941B TW 110128351 A TW110128351 A TW 110128351A TW 110128351 A TW110128351 A TW 110128351A TW I804941 B TWI804941 B TW I804941B
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Description
本發明關於一種電流感測器,尤指一種於導磁體之氣隙的兩側形成凹槽,以改善磁通分佈之電流感測器。 The present invention relates to a current sensor, especially a current sensor in which grooves are formed on both sides of the air gap of the magnetizer to improve the distribution of magnetic flux.
於電流感測器之相關領域,可使用感測元件偵測受測導體產生的磁感應之強度,以偵測受測導體上的電流值。 In the related fields of current sensors, the sensing element can be used to detect the intensity of the magnetic induction generated by the conductor under test, so as to detect the current value on the conductor under test.
然而,感測元件所放置的位置若稍有誤差,則易造成感應的精確度急遽下降。換言之,感測元件所放置的位置必須非常精準,否則將使偵測結果不準確。造成上述問題的原因在於:受測導體產生的磁通量之分佈中,具有可容許誤差內的磁通量的範圍甚為狹窄,例如在實務上磁通量的可容許誤差為最高磁通量的0.1%以下,超過此誤差範圍將無法精確的感測。 However, if there is a slight error in the position of the sensing element, the accuracy of sensing will drop sharply. In other words, the position of the sensing element must be very precise, otherwise the detection result will be inaccurate. The reason for the above problems is that in the distribution of the magnetic flux generated by the conductor under test, the range of the magnetic flux within the allowable error is very narrow. For example, in practice, the allowable error of the magnetic flux is less than 0.1% of the highest magnetic flux. range will not be accurately sensed.
由於感測元件須設置於具有較高磁通量的範圍,才可精確地感應磁通量,故具有較高磁通量的範圍狹窄,將造成允許放置感測元件之空間很小,而使組裝及設置感測元件時,可容許之誤差很小,從而導致組裝難度上升,且組裝良率難以提高。 Since the sensing element must be placed in a range with a high magnetic flux, the magnetic flux can be accurately induced, so the range with a high magnetic flux is narrow, which will result in a small space for placing the sensing element, which makes it difficult to assemble and install the sensing element. , the allowable error is very small, which leads to increased difficulty of assembly, and it is difficult to improve the assembly yield.
實施例提供一種電流感測器,包含一導磁體及一感測元件。該導磁體用以圍繞一受測導體,該受測導體上的一電流於該導磁體上產生磁通。該導磁體具有一氣隙、一第一端及一第二端,其中該氣隙位於該導磁體上,該第一端位於該氣隙的一第一側且具有一第一凹槽,且該第二端位於該氣隙相對該第一側之一第二側且具有一第二凹槽。該感測元件設置於該氣隙,用以根據於該 導磁體產生之磁通以感應該電流。 The embodiment provides a current sensor, which includes a magnetic conductor and a sensing element. The magnetic conductor is used to surround a tested conductor, and a current on the tested conductor generates magnetic flux on the magnetic conductor. The magnetizer has an air gap, a first end and a second end, wherein the air gap is located on the magnetizer, the first end is located on a first side of the air gap and has a first groove, and the The second end is located on a second side of the air gap opposite to the first side and has a second groove. The sensing element is arranged in the air gap, for according to the The magnetic flux generated by the magnetizer induces the current.
100,500,600,700:電流感測器 100,500,600,700: current sensor
110,610,710:導磁體 110,610,710: magnetizer
1101,1102:端 1101, 1102: terminal
1101a,1101b,1102a,1102b,115a,115b:側 1101a, 1101b, 1102a, 1102b, 115a, 115b: side
115:氣隙 115: air gap
120:感測元件 120: sensing element
150:受測導體 150: Conductor under test
310,320,410,420,430,440,450:曲線 310,320,410,420,430,440,450: curve
C1:電流 C1: current
CT1,CT2:圓心 CT1, CT2: center of circle
D1,D2:距離 D1, D2: distance
F:參考面 F: reference surface
L1,L2:軸 L1, L2: axis
R,Ra,Rb:範圍 R, Ra, Rb: range
R1,R2:半徑 R1, R2: radius
SS:短邊 SS: short side
SL:長邊 SL: long side
G1:第一凹槽 G1: first groove
G2:第二凹槽 G2: second groove
第1圖為實施例中,具有導磁體之電流感測器之立體示意圖。 Fig. 1 is a three-dimensional schematic diagram of a current sensor with a magnetic conductor in an embodiment.
第2圖為第1圖之電流感測器之前視圖。 Figure 2 is a front view of the current sensor in Figure 1.
第3圖為受測導體上的電流產生的磁通之分佈曲線圖。 Figure 3 is the distribution curve of the magnetic flux generated by the current on the conductor under test.
第4圖為實施例中,使用相異半徑執行修弧操作以產生相異凹槽後,分別量測到之磁通分佈圖。 FIG. 4 is the measured magnetic flux distribution diagrams after the arc trimming operation is performed with different radii to produce different grooves in the embodiment.
第5圖為另一實施例中,電流感測器之立體示意圖。 FIG. 5 is a three-dimensional schematic diagram of a current sensor in another embodiment.
第6圖為另一實施例中,電流感測器之示意圖。 FIG. 6 is a schematic diagram of a current sensor in another embodiment.
第7圖為另一實施例中,電流感測器之示意圖。 FIG. 7 is a schematic diagram of a current sensor in another embodiment.
第1圖為實施例中,電流感測器100之立體示意圖。電流感測器100可包含導磁體110以及感測元件120。導磁體110可為環型導磁體。導磁體110用以圍繞受測導體150。受測導體150上的電流C1可於導磁體110上產生磁通。導磁體110具有氣隙115、第一端1101及第二端1102。氣隙115位於導磁體110之長邊SL。第一端1101位於氣隙115的第一側115a,具有第一凹槽G1。第二端1102,位於氣隙115相對於第一側115a之第二側115b,具有第二凹槽G2。感測元件120設置於氣隙115,用以根據於導磁體110產生之磁通,以感應電流C1。舉例而言,感測元件120可為霍爾感測元件,用以將磁通轉為電壓訊號,電壓訊號可用以量測電流C1。導磁體110可形成參考面F,受測導體150可沿參考面F之法線(亦即軸L1)穿透導磁體110之參考面F,而垂直於參考面F之法線之垂直軸(亦即軸L2)可通
過氣隙115。
FIG. 1 is a three-dimensional schematic diagram of a
第一凹槽G1及第二凹槽G2的形狀可根據需求予以調整,舉例而言,如第1圖所示,電流感測器100之第一凹槽G1及第二凹槽G2可為弧形凹槽。
The shapes of the first groove G1 and the second groove G2 can be adjusted according to requirements. For example, as shown in FIG. 1, the first groove G1 and the second groove G2 of the
若將軸L1定義為前後方向,第2圖可為第1圖之電流感測器100之前視圖。第一凹槽G1可根據第一圓心CT1及第一半徑R1對第一端1101執行第一修弧操作而產生,且第一修弧操作對應之圓形可平行於參考面F。第二凹槽G2可根據第二圓心CT2及第二半徑R2對第二端1102執行第二修弧操作而產生,且第二修弧操作對應之圓形可平行於參考面F。換言之,如第2圖所示,沿著軸L1之方向觀之,可見修弧操作產生之弧形凹槽。
If the axis L1 is defined as the front-back direction, FIG. 2 can be a front view of the
電流感測器100可改善軸L2方向上的磁通分佈,讓高磁通分佈的範圍更廣,使感測元件120即使因為組裝誤差而稍微偏移預定的中心位置,仍能感測到小於一定誤差以內的磁通量,也就是增加允許感測元件120設置之範圍,如下所述。
The
第3圖為第1圖之受測導體150上的電流C1產生的磁通之分佈曲線圖。第3圖中,曲線310為上述第一端1101及第二端1102不具有凹槽所量到的磁通之分佈曲線,而曲線320為上述第一端1101及第二端1102具有凹槽所量到的磁通之分佈曲線。
FIG. 3 is a graph showing the distribution of the magnetic flux generated by the current C1 on the
第3圖之縱軸可對應於磁通量,且橫軸可平行於軸L2以對應於空間中的位置。第3圖之縱軸上的0.00%可對應於最高磁通量,而低於0.00%之值對應於低於最高磁通量之磁通量。第3圖之橫軸上,0%處可對應於軸L2上第一端1101及第二端1102之中心線位置,100%處可對應於軸L2上第一端1101及第二端1102最遠離受測物體150之位置,且-100%處可對應於軸L2上第一端1101及第二端1102最接近受測物體150之位置;換言之,第3圖之橫軸之-100%處至100%處,可對應於第2圖之範圍R。
The vertical axis of Fig. 3 may correspond to magnetic flux, and the horizontal axis may be parallel to axis L2 to correspond to position in space. 0.00% on the vertical axis of Figure 3 may correspond to the highest magnetic flux, while values below 0.00% correspond to magnetic fluxes below the highest magnetic flux. On the horizontal axis of Figure 3, the 0% position can correspond to the center line position of the
如曲線310所示,對應於最高磁通量及最高磁通量之變化量小於0.1%的範圍Ra,約佔範圍R的19.9%,包含從範圍R之中心點往受測導體120之方向偏移之11.3%以及往反方向偏移之8.6%。換言之,感測元件120之位置於軸L2上應設置於範圍Ra,以感應較高的磁通量,以維持偵測之精確度。
As shown in the
如曲線320所示,對應於最高磁通量及最高磁通量之變化量小於0.1%的範圍Rb,約佔範圍R的62.8%,包含從範圍R之中心點往受測導體120之方向偏移之33.4%,以及往反方向偏移之29.4%。換言之,感測元件120之位置於軸L2上應設置於範圍Rb,以感應較高的磁通量,以維持偵測之精確度。
As shown in the
比較曲線310以及曲線320,可知當第一端1101及第二端1102具有凹槽時,最高磁通量及最高磁通量之變化量小於預定比例(例如0.1%)的範圍可被增廣,例如於本發明的其中一實施例中,可從範圍Ra(19.9%)增加到範圍Rb(62.8%),增廣3.15倍。因此,可增廣感測元件120允許設置之位置的範圍,從而可降低組裝時對於精確度的要求及難度,且提高組裝之良率。第3圖之數字及曲線僅為舉例,以助於理解實施例,但實施例不限於此。
Comparing the
曲線310以及曲線320所對應的總磁通量實質上相等,然而,藉由使用第一凹槽G1及第二凹槽G2,可改變磁通量的分佈。第一凹槽G1之中間處與第二凹槽G2之中間處之間的距離D1,大於第一凹槽的兩側與第二凹槽的兩側之間的距離D2;此處提及的中間處並不限於正中間的位置,而是指兩側之間的位置。因此,第一凹槽G1之中間處與第二凹槽G2之中間處之間的磁阻,大於第一凹槽G1的兩側與第二凹槽G2的兩側之間的磁阻。因此,可調整磁通量的分佈,使磁通量往兩側分佈較多,從而使磁通之分佈曲線於最高處附近呈現較平且較廣,以降低組裝時對於精確度的要求及難度。
The total magnetic flux corresponding to the
根據實施例,如第2圖所示,導磁體110之第一端1101可包含第一側1101a及第二側1101b,第一側1101a比第二側1101b更靠近受測導體150,且第一
圓心CT1及第一側1101a的距離小於第一圓心CT1及第二側1101b的距離;換言之,第一圓心CT1可不位於第一端1101之中心線位置,而可設置得更接近受測導體150一些。此可進一步改善磁通分佈,說明如下。
According to an embodiment, as shown in FIG. 2, the
如第3圖之曲線310所示,尚未使用導磁體110之凹槽調整磁通分佈時,磁通量最高處並非位於第一端1101之中心線位置(亦即橫軸之0%處),而是相較於中心線位置,稍微偏離且位於往橫軸之負值方向處,這是因為靠近受測導體150處的磁通量較高。因此,當執行修弧操作以設計凹槽時,可將第一圓心CT1稍加設置得更靠近受測導體150,以使凹槽之較凹處(亦即磁阻較大處)對應於調整前的較高磁通處,以於對於磁通分佈提供較多的調整,以使調整後的較高磁通於空間上分佈的更廣。同理,第二端1102可包含第一側1102a及第二側1102b,第一側1102a比第二側1102b更靠近受測導體150,且第二圓心CT2及第一側1101a的距離,可小於第二圓心CT2及第二側1102b的距離,以使第二圓心CT2更接近受測導體150,而更佳改善磁通分佈。
As shown in the
第4圖為實施例中,使用相異半徑執行修弧操作以產生相異凹槽後,分別量測到之磁通分佈圖。第4圖之縱軸及橫軸可如第3圖,故不重述。相較於未修弧的可容許誤差內的磁通量,以一基準半徑進行修弧而使偏離中心距離3倍以上仍具有可容許誤差內的磁通量,此所對應的磁通量曲線變化即對應曲線430。也就是說,當不執行修弧操作,亦即導磁體110之兩端無凹槽時,磁通之分佈於一原始高磁通區間中具有可容許誤差(例如為最高磁通量之±0.1%以下);而當使用基準半徑執行修弧操作以於導磁體110之兩端產生凹槽時,磁通之分佈於一基準高磁通區間中具有可容許誤差,且基準高磁通區間的空間中位置的寬度(橫軸)可至少為原始高磁通區間寬度之3倍寬。據此,可定義基準半徑,其中曲線410對應於基準半徑縮小11.43%之半徑,曲線420對應於基準半徑縮小5.7%之半徑,曲線440對應於基準半徑增大5.7%之半徑,且曲線450對應於基準
半徑增大11.43%之半徑。
FIG. 4 is the measured magnetic flux distribution diagrams after the arc trimming operation is performed with different radii to produce different grooves in the embodiment. The vertical axis and horizontal axis of Fig. 4 can be as Fig. 3, so it will not be repeated. Compared with the magnetic flux within the allowable error without arc trimming, the arc trimming is carried out with a reference radius, so that the distance from the center is more than 3 times and the magnetic flux is still within the allowable error. The corresponding change of the magnetic flux curve is the
如第4圖所示,若修弧操作之半徑小於基準半徑之90%(例如曲線410),則於軸L2上,磁通之分佈的高磁通區間過窄,而無法增大設置感測元件120之容許範圍。若修弧操作之半徑大於基準半徑之110%(例如曲線450),則於軸L2上,磁通分佈的高磁通區間之中間部位下凹,其非兩端之中間部位的磁通量過低。因此較佳地,針對第一端1101以及第二端1102的修弧操作之半徑可設定為基準半徑的特定長度範圍內(例如基準半徑的90%~110%),而第4圖之數值僅為舉例,以助於說明實施例,實施例不限於此。
As shown in Figure 4, if the radius of the arc trimming operation is less than 90% of the reference radius (for example, curve 410), then on the axis L2, the high flux range of the magnetic flux distribution is too narrow, and it is impossible to increase the set sensing Allowable range of
第5圖為另一實施例中,電流感測器500之立體示意圖。電流感測器500可相似於第1圖之電流感測器100,但其凹槽之設置方向不同。第5圖中,第一凹槽G1可根據第一圓心CT1及第一半徑R1對第一端1101執行第一修弧操作而產生,且第一修弧操作對應之圓形可垂直於參考面F。第二凹槽G2可根據第二圓心CT2及第二半徑R2對第二端1102執行第二修弧操作而產生,且第二修弧操作對應之圓形可垂直於參考面F。換言之,如第2圖所示,沿著軸L2之方向看入,可見修弧操作產生之弧形凹槽。
FIG. 5 is a three-dimensional schematic diagram of a
電流感測器500可改善軸L1方向上的磁通分佈,以使高磁通分佈的範圍更廣,以增加允許設置感測元件120之範圍。電流感測器500之原理相似於電流感測器100,故不重述。如第4圖所述,電流感測器500的修弧操作之半徑可設定為基準半徑的特定長度範圍內。
The
根據實施例,第1圖及第5圖所示之兩方向的修弧操作可皆執行,以產生凹槽,從而改善軸L1方向及軸L2方向上的磁通分佈。 According to an embodiment, the arc trimming operations in both directions shown in FIG. 1 and FIG. 5 can be performed to generate grooves, thereby improving the magnetic flux distribution in the direction of the axis L1 and the axis L2.
第1圖及第5圖中,每一凹槽係以單一圓心及單一半徑,執行修弧操作而產生。然而,根據實施例,每一凹槽可用多個圓心及多個半徑,執行多次修弧操作而產生。舉例而言,第一凹槽G1可根據n個圓心及m個半徑對第一端
1101執行n次修弧操作而產生,且n次修弧操作對應之n個圓形可平行於參考面F(類似第1圖)或垂直於參考面F(類似第5圖),其中n、m為正整數且mn。同理,第二凹槽G2亦可根據n個圓心及m個半徑對第一端1101執行n次修弧操作而產生。採用多次修弧,可進一步調整凹槽形狀,以進一步改善調整磁通分佈的結果。
In Fig. 1 and Fig. 5, each groove is generated by performing an arc trimming operation with a single center and a single radius. However, according to an embodiment, each groove can be generated by performing multiple arc trimming operations with multiple centers and multiple radii. For example, the first groove G1 can be generated by performing n times of arc trimming operations on the
根據實施例,第1圖及第5圖中,感測元件120及第一端1101之距離,實質上可相等於感測元件120及第二端1102之距離。
According to an embodiment, in FIG. 1 and FIG. 5 , the distance between the
如第1圖、第2圖及第5圖所示,導磁體110具有長邊SL以及短邊SS,氣隙115位於長邊SL,因此,第1圖之導磁體110為C型之導磁體。第6圖為另一實施例的電流感測器600之前視圖。相似於電流感測器100及500,電流感測器600的導磁體610亦具有長邊SL以及短邊SS,但氣隙115位於短邊SS,因此,導磁體610為U型之導磁體。電流感測器600之原理及構造相似於電流感測器100及500,故不重述。
As shown in Figure 1, Figure 2 and Figure 5, the
第1圖、第5圖、第6圖中,導磁體110及導磁體610之短邊可為弧形,以使導磁體110及導磁體610具有類似田徑場之形狀;然而,第1圖、第5圖及第6圖之導磁體110及導磁體610的形狀僅為舉例。根據實施例,相同體積下,使用C型之導磁體110比使用U型之導磁體610可應用的電流範圍較大,較不易磁飽和,且在低電流時的感測精度較佳。
In Fig. 1, Fig. 5, and Fig. 6, the short sides of the
第7圖為另一實施例的電流感測器700之前視圖。與電流感測器100、500及600不同的是,電流感測器700之導磁體710不特別區分長邊及短邊,故具有近似於圓形之形狀。
FIG. 7 is a front view of a
同理於第1圖及第5圖,電流感測器600及700中,產生凹槽之修弧操作所對應的圓形可平行或垂直於參考面F,以產生不同方向之凹槽,以改善磁通量於軸L2方向或軸L1方向上的分佈。
Similarly in Fig. 1 and Fig. 5, in the
總上,藉由於導磁體110、610以及710之兩端形成凹槽,可改善磁通量於軸L2方向或軸L1方向上的分佈,使高磁通量於分佈曲線上之範圍更廣,以增大可設置感測元件120之範圍,從而降低組裝上對精度的需求,及提高組裝之良率。
In general, by forming grooves at both ends of the
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.
100:電流感測器 100: current sensor
110:導磁體 110: magnetizer
1101,1102:端 1101, 1102: terminal
1101a,1101b,1102a,1102b,115a,115b:側 1101a, 1101b, 1102a, 1102b, 115a, 115b: side
115:氣隙 115: air gap
120:感測元件 120: sensing element
150:受測導體 150: Conductor under test
C1:電流 C1: current
CT1,CT2:圓心 CT1, CT2: center of circle
D1,D2:距離 D1, D2: distance
F:參考面 F: reference surface
L1,L2:軸 L1, L2: axis
R1,R2:半徑 R1, R2: radius
SS:短邊 SS: short side
SL:長邊 SL: long side
G1:第一凹槽 G1: first groove
G2:第二凹槽 G2: second groove
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