TWI803872B - Appratus for removing thin film and method for removing thin film - Google Patents
Appratus for removing thin film and method for removing thin film Download PDFInfo
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- TWI803872B TWI803872B TW110117460A TW110117460A TWI803872B TW I803872 B TWI803872 B TW I803872B TW 110117460 A TW110117460 A TW 110117460A TW 110117460 A TW110117460 A TW 110117460A TW I803872 B TWI803872 B TW I803872B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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Abstract
本發明的實施例提供薄膜去除裝置及薄膜去除方法。本發明一個實施例的薄膜去除裝置包括:膜附著裝置,所述膜附著裝置在配置於被加工物的薄膜上附著保護膜;雷射加工單元,所述雷射加工單元照射雷射光束,將所述薄膜與所述保護膜從所述被加工物一體分離;及膜去除單元,所述膜去除單元使所述薄膜從所述被加工物脫離。Embodiments of the present invention provide a thin film removal device and a thin film removal method. A thin film removal device according to an embodiment of the present invention includes: a film attaching device that attaches a protective film to a thin film disposed on a workpiece; a laser processing unit that irradiates a laser beam to The thin film and the protective film are integrally separated from the workpiece; and a film removing unit that separates the thin film from the workpiece.
Description
本發明的實施例有關薄膜去除裝置及薄膜去除方法。Embodiments of the present invention relate to a thin film removal device and a thin film removal method.
為了保護被加工物不受外部衝擊或者氧氣或水分流入的影響,可以在被加工物上配置有保護膜。保護膜作為配置於被加工物外部的薄膜形態的構件,可以切斷被加工物與外部的接觸,提高被加工物的耐久性。In order to protect the workpiece from external impact or inflow of oxygen or moisture, a protective film may be placed on the workpiece. The protective film is a member in the form of a thin film arranged outside the workpiece, which can cut off the contact between the workpiece and the outside and improve the durability of the workpiece.
可是,當在配置於被加工物上的薄膜沾有異物或在製造過程中薄膜發生不良時,相應薄膜對其他被加工物或完成的製品造成不良影響,製品的收率會低下。因此,需要去除不良的薄膜或被污染的薄膜。However, when a film placed on a workpiece is stained with foreign matter or the film is defective during the manufacturing process, the corresponding film will adversely affect other workpieces or finished products, and the yield of the product will decrease. Therefore, there is a need to remove bad or contaminated films.
作為以往方法,有利用膠帶直接去除薄膜上沾有的異物的方法。但是,該方法以手工操作進行,因而無法完美地去除異物,去除需要的時間長,生產量會低下。另外,需投入大量人力,因而為了提高收率,導致人工費用增加。As a conventional method, there is a method of directly removing foreign matter attached to a film by using an adhesive tape. However, this method is performed manually, and thus foreign substances cannot be removed perfectly, and it takes a long time to remove them, resulting in a decrease in throughput. In addition, since a large amount of manpower is required, in order to increase the yield, labor costs are increased.
另外,作為用於去除被污染薄膜或不良薄膜的以往方法,有利用雷射的方式。但是,在利用雷射加工薄膜的過程中,發生煙氣(fume)等微細異物,因而會在其他被加工物及/或薄膜發生二次污染。另外,為了去除在雷射加工時發生的煙氣等微細異物,需持續啟動吸入裝置,因而費用成為問題。In addition, as a conventional method for removing a contaminated thin film or a defective thin film, there is a method using a laser. However, in the process of processing thin films with laser, fine foreign matter such as fume is generated, which causes secondary pollution on other workpieces and/or thin films. In addition, in order to remove fine foreign matter such as smoke generated during laser processing, it is necessary to continuously activate the suction device, so cost becomes a problem.
前述的先前技術作為發明人為了匯出本發明而已經保有或在本發明的匯出過程中學到的技術資訊,不能說是必須在本發明申請之前向普通公眾公開的公知技術。The aforementioned prior art, as technical information that the inventor has kept or learned during the process of exporting the present invention, cannot be said to be a known technology that must be disclosed to the general public before the application of the present invention.
本發明實施例的目的在於提供一種能夠在無被加工物的二次污染的情況下去除在被加工物上面配置的薄膜的薄膜去除裝置及薄膜去除方法。不過,前述課題作為本發明的實施例,本發明的目的及要解決的技術課題不限於此。An object of an embodiment of the present invention is to provide a thin film removal device and a thin film removal method capable of removing a thin film disposed on a workpiece without secondary pollution of the workpiece. However, the aforementioned problems are examples of the present invention, and the purpose and technical problems to be solved of the present invention are not limited thereto.
本發明一個實施例的薄膜去除裝置包括:膜附著裝置,所述膜附著裝置在配置於被加工物的薄膜上附著保護膜;雷射加工單元,所述雷射加工單元照射雷射光束,將所述薄膜與所述保護膜從所述被加工物一體分離;及膜去除單元,所述膜去除單元使所述薄膜從所述被加工物脫離。A thin film removal device according to an embodiment of the present invention includes: a film attaching device that attaches a protective film to a thin film disposed on a workpiece; a laser processing unit that irradiates a laser beam to The thin film and the protective film are integrally separated from the workpiece; and a film removing unit that separates the thin film from the workpiece.
在本發明一個實施例的薄膜去除裝置中,所述保護膜可以具有與所述薄膜對應的形狀,在附著於所述薄膜上面的狀態下,端部可以凸出到所述薄膜的外側。In the thin film removing device according to one embodiment of the present invention, the protective film may have a shape corresponding to the thin film, and in a state attached to the thin film, an end may protrude outside the thin film.
在本發明一個實施例的薄膜去除裝置中,所述雷射光束的波長可以為440 nm至1500 nm,透過所述保護膜,去除所述薄膜的一部分。In the thin film removal device according to an embodiment of the present invention, the wavelength of the laser beam may be 440 nm to 1500 nm, and pass through the protective film to remove a part of the thin film.
在本發明一個實施例的薄膜去除裝置中,所述雷射加工單元可以將所述雷射光束照射於所述薄膜的內側區域,使所述薄膜從所述被加工物的上面翹起(或消融),將所述雷射光束照射於所述薄膜的邊緣,使所述薄膜的邊緣從所述被加工物的上面分離。In the thin film removal device according to one embodiment of the present invention, the laser processing unit can irradiate the laser beam on the inner area of the thin film, so that the thin film is raised from the top of the workpiece (or ablation), irradiating the laser beam on the edge of the film to separate the edge of the film from the upper surface of the processed object.
在本發明一個實施例的薄膜去除裝置中,所述膜去除單元可以在把持所述保護膜的端部的狀態下,向預先設置的方向移動,使所述薄膜與所述保護膜從所述被加工物一體脫離。In the thin film removal device according to one embodiment of the present invention, the film removal unit can move in a preset direction while holding the end of the protective film, so that the thin film and the protective film can move from the The workpiece is separated as a whole.
本發明另一實施例的薄膜去除方法包括:在配置於被加工物的薄膜上附著保護膜的步驟;照射雷射光束,使所述薄膜與所述保護膜從所述被加工物一體分離的步驟;及使所述薄膜從所述被加工物脫離的步驟。A thin film removal method according to another embodiment of the present invention includes: a step of attaching a protective film to a thin film arranged on a workpiece; irradiating a laser beam to integrally separate the thin film and the protective film from the workpiece. steps; and a step of releasing the thin film from the workpiece.
在本發明另一實施例的薄膜去除方法中,所述雷射光束的波長可以為440 nm至1500 nm,透過所述保護膜,去除所述薄膜的一部分。In the thin film removal method in another embodiment of the present invention, the wavelength of the laser beam may be 440 nm to 1500 nm, and pass through the protective film to remove a part of the thin film.
在本發明另一實施例的薄膜去除方法中,將所述薄膜與所述保護膜一體分離的步驟包括:將所述雷射光束照射於所述薄膜的內側區域而使所述薄膜從所述被加工物的上面翹起的步驟;及將所述雷射光束照射於所述薄膜的邊緣而使所述薄膜的邊緣從所述被加工物的上面分離的步驟。In another embodiment of the thin film removal method of the present invention, the step of integrally separating the thin film from the protective film includes: irradiating the laser beam on the inner area of the thin film to make the thin film separate from the protective film. a step of lifting the upper surface of the workpiece; and a step of irradiating the laser beam on the edge of the film to separate the edge of the film from the upper surface of the workpiece.
在本發明另一實施例的薄膜去除方法中,使所述薄膜脫離的步驟可以在把持所述保護膜的端部的狀態下向預先設置的方向移動,使所述薄膜與所述保護膜從所述被加工物一體脫離。In the thin film removal method according to another embodiment of the present invention, the step of detaching the thin film can be moved to a preset direction while holding the end of the protective film, so that the thin film and the protective film are separated from each other. The workpiece is separated integrally.
通過以下具體實施方式、申請專利範圍及圖式,除前述內容之外的其他側面、特徵、優點將更加明確。Other aspects, features, and advantages other than those mentioned above will become clearer through the following specific implementation methods, patent claims, and drawings.
本發明一個實施例的薄膜去除裝置及薄膜去除方法在配置於被加工物上面的薄膜上附著保護膜,照射雷射光束,將被加工物的上面和薄膜分離,從而可以防止薄膜去除製程中發生的煙氣等異物飛散及擴散,可以防止異物導致其他被加工物被二次污染。In the thin film removal device and thin film removal method according to one embodiment of the present invention, a protective film is attached to the thin film placed on the workpiece, and a laser beam is irradiated to separate the upper surface of the workpiece from the thin film, thereby preventing the occurrence of the thin film removal process. The flying and diffusion of foreign matter such as flue gas can prevent foreign matter from causing secondary pollution of other processed objects.
本發明一個實施例的薄膜去除裝置及薄膜去除方法在薄膜和保護膜附著的狀態下進行製程,從而可以切實防止其他被加工物被二次污染。另外,本發明一個實施例的薄膜去除裝置及薄膜去除方法不需要配備另外的吸入裝置或排氣裝置,可以飛躍性地節省費用。The thin film removal device and the thin film removal method according to one embodiment of the present invention carry out the manufacturing process in the state where the thin film and the protective film are attached, so that other processed objects can be effectively prevented from being polluted again. In addition, the thin film removal device and the thin film removal method according to an embodiment of the present invention do not need to be equipped with additional suction devices or exhaust devices, which can greatly save costs.
本發明可以施加多樣的變換,可以具有多種實施例,將在附圖中示例性圖示特定實施例並在發明的說明中詳細說明。但是,這並非要將本發明限定於特定實施例,應理解為包括本發明的思想及技術範圍內包含的所有變換、均等物以及替代物。在說明本發明方面,即使在不同實施例中圖示,對於相同的構成要素,使用相同的圖式標號。While the present invention can be subjected to various transformations and has various embodiments, specific embodiments will be illustrated by way of example in the drawings and described in detail in the description of the invention. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that all transformations, equivalents, and substitutions included within the spirit and technical scope of the present invention are included. In describing the present invention, even if different embodiments are shown, the same reference numerals are used for the same components.
第一、第二等術語可以用於說明多樣的構成要素,但構成要素不得由術語所限定。術語只用於把一種構成要素區別於另一構成要素的目的。Terms such as first and second may be used to describe various constituent elements, but the constituent elements shall not be limited by the terms. The terms are used only for the purpose of distinguishing one constituent element from another.
在本發明中使用的術語只是為了說明特定實施例而使用,並非要限定本發明之意。在本發明中,“包括”或“具有”等術語應理解為是要指定說明書上記載的特徵、數位、步驟、動作、構成要素、部件或它們的組合的存在,不預先排除一個或其以上的其它特徵或數位、步驟、動作、構成要素、部件或它們的組合的存在或附加可能性。The terms used in the present invention are used only to describe specific embodiments, and are not intended to limit the present invention. In the present invention, terms such as "comprising" or "having" should be understood as specifying the existence of features, digits, steps, actions, constituent elements, parts or their combinations described in the specification, without precluding one or more than one The existence or additional possibility of other features or digits, steps, actions, constituent elements, parts or their combinations.
圖1是顯示本發明一個實施例的薄膜去除裝置10的圖,圖2是顯示圖1的膜附著單元200的運轉狀態的圖,圖3是顯示圖2的保護膜PF的多樣形態的圖。1 is a diagram showing a thin
如果參照圖1至圖3,本發明一個實施例的薄膜去除裝置10可以用於去除薄膜TF。更具體而言,薄膜去除裝置10可以用於在基板S包括的多個被加工物W上面配置的薄膜TF中,去除附著有異物的薄膜TF或不良薄膜TF。Referring to FIG. 1 to FIG. 3 , a thin
不過,薄膜TF並非必須限定於附著有異物的薄膜TF或不良薄膜TF,可以是需要去除的多樣狀態的薄膜TF。在本說明書中,為了發明的便利,以附著有異物的薄膜TF或不良薄膜TF為中心進行說明。However, the thin film TF is not necessarily limited to the thin film TF to which foreign matter adheres or the defective thin film TF, and may be thin films TF in various states that need to be removed. In this specification, for convenience of the invention, the description will be centered on the thin film TF to which foreign matter adheres or the defective thin film TF.
本發明一個實施例的薄膜去除裝置10可以包括平臺100、膜附著單元200、雷射加工單元300、膜去除單元400。The thin
基板S安放於平臺100的上面。作為一個實施例,為了防止加工中基板S晃動或振動,平臺100可以包括固定構件(圖上未示出)。例如,平臺100可以包括對基板S上面進行加壓固定的握爪(圖上未示出)或吸附基板S下麵的吸入孔(圖上未示出)。The substrate S is placed on the
平臺100可以在加工中保持固定狀態,或借助於控制器(圖上未示出)的操作而向至少某一方向並進或旋轉運動。The
膜附著單元200在安放於平臺100上的被加工物W上附著保護膜PF。作為一個實施例,膜附著單元200可以在配置於被加工物W上面的薄膜TF上附著保護膜PF。The
保護膜PF的材質不特別限定。作為一個實施例,保護膜PF作為用於加工的雷射透過的材質,可以由聚對苯二甲酸乙二酯(PET)構成。更具體而言,保護膜PF作為雷射加工單元300照射的波長440 nm至1500 nm雷射光束L透過的材質,可以為透明或不透明的材質。The material of the protective film PF is not particularly limited. As an example, the protective film PF may be made of polyethylene terephthalate (PET) as a laser-transmissive material for processing. More specifically, the protection film PF is a material through which the laser beam L with a wavelength of 440 nm to 1500 nm irradiated by the
作為一個實施例,保護膜PF可以包括光學用黏合劑,光學用黏合劑可以為OCA(optical clear adhesive:光學透明膠)或OCR(optical clear resin:光學透明樹脂)。As an example, the protective film PF may include an optical adhesive, and the optical adhesive may be OCA (optical clear adhesive: optically transparent adhesive) or OCR (optical clear resin: optically transparent resin).
本發明一個實施例的膜附著單元200可以包括吸附墊210、第一輥220。The
吸附墊210吸附保護膜PF並使之附著於薄膜TF上。作為一個實施例,吸附墊210可以吸附載入單元(圖上未示出)載入的保護膜PF並提起。而且,吸附墊210移動到附著了異物的薄膜TF或不良薄膜TF後,向下移動,可以將保護膜PF附著於附著了異物的薄膜TF或不良薄膜TF上(參照圖2的(a))。The
第一輥220可以對附著於薄膜TF上的保護膜PF加壓。作為一個實施例,第一輥220可以在向膜附著單元200的移動方向移動的同時,將保護膜PF從上向下加壓。因此,薄膜TF和保護膜PF可以更緊密地附著,特別是可以去除薄膜TF與保護膜PF之間的氣泡,提高薄膜TF與保護膜PF間的附著力。The
作為一個實施例,保護膜PF可以具有與薄膜TF形狀對應的形狀。更具體而言,如圖3所示,保護膜PF可以具有與具有多樣形狀的薄膜TF相同的形狀。As one example, the protection film PF may have a shape corresponding to the shape of the thin film TF. More specifically, as shown in FIG. 3 , the protective film PF may have the same shape as the thin film TF having various shapes.
保護膜PF的大小不特別限定。作為一個實施例,保護膜PF優選比薄膜TF大預先設置的比率。即,保護膜PF具有與薄膜TF形狀對應的形狀,且其大小可以大於薄膜TF。因此,在保護膜PF附著於薄膜TF上的狀態下,保護膜PF的端部凸出到薄膜TF的外側,然後可以利用膜去除單元400,容易地去除薄膜TF。The size of the protective film PF is not particularly limited. As an example, the protective film PF is preferably larger than the thin film TF by a preset ratio. That is, the protective film PF has a shape corresponding to that of the thin film TF, and may be larger in size than the thin film TF. Therefore, in a state where the protective film PF is attached to the thin film TF, the end of the protective film PF protrudes outside the thin film TF, and then the thin film TF can be easily removed by the
圖4是顯示圖1的雷射加工單元300的一個示例的圖,圖5及圖6是顯示圖4的雷射加工單元300的運轉狀態的圖。FIG. 4 is a diagram showing an example of the
本發明一個實施例的薄膜去除裝置10可以利用雷射加工單元300,分離被加工物W上配置的薄膜TF。雷射加工單元300可以照射具有既定波長及能量的雷射光束,將薄膜TF與保護膜PF從被加工物W一體分離。The thin
如果參照圖4,作為一個實施例,雷射加工單元300可以包括雷射振盪器310、光學儀320、雷射控制器330。Referring to FIG. 4 , as an embodiment, the
雷射振盪器310可以激發(excitation)特定介質而生成雷射光束L。雷射振盪器310使用的介質不特別限定,可以使用液體、氣體、固體或半導體。The
雷射振盪器310激發的雷射光束L的波長不特別限定。優選地,雷射光束L作為藍色雷射(blue laser)至近紅外線雷射(near infrared laser),可以具有440 nm至1500 nm的波長。The wavelength of the laser beam L excited by the
作為一個實施例,雷射振盪器310可以生成脈衝雷射(pulse laser)。雷射振盪器310可以具備Q-開關(Q-switching)裝置,因而可以生成具有ps至fs的超短脈衝寬度的雷射光束L。As an example, the
光學儀320可以控制雷射振盪器310生成的雷射光束L的光路徑,或生成照射於被加工物W上的雷射光束L的點等。The
本發明一個實施例的光學儀320可以包括兩個振鏡321a、321b、平場聚焦(F-theta)透鏡322。The
振鏡321a、321b可以借助於伺服馬達(圖上未示出)及對其進行控制的雷射控制器330,控制入射的雷射光束L的光路徑。振鏡321a、321b可以以至少某一軸,例如以X軸或Y軸為中心進行旋轉。因此,雷射振盪器310激發的雷射光束L可以沿著借助於振鏡321a、321b而預先設置的路徑移動。The vibrating mirrors 321a and 321b can control the optical path of the incident laser beam L by means of a servo motor (not shown in the figure) and a
透過振鏡321a、321b的雷射光束L可以入射到平場聚焦透鏡322。平場聚焦透鏡322可以對雷射光束L進行聚光,照射於平臺100上安放的被加工物W的預先設置的位置。The laser beam L passing through the vibrating
雷射控制器330可以控制雷射振盪器310、光學儀320及平臺100。作為一個實施例,雷射控制器330可以考慮平臺100上安放的被加工物W位置及雷射光束L的移動速度、照射位置等,控制雷射振盪器310激發的雷射光束L的照射時間安排。或者,雷射控制器330可以控制雷射振盪器310照射的雷射光束L的輸出或波長等。The
另外,雷射控制器330可以控制光學儀320,即,控制振鏡321a、321b和平場聚焦 透鏡322的位置,控制雷射光束L的光路徑及照射位置等。In addition, the
另外,雷射控制器330可以在雷射加工中,使雷射加工單元300本身向加工方向移動,或使平臺100向加工方向移動,進行雷射加工。In addition, the
作為另一實施例,雷射加工單元300可以包括將雷射振盪器310激發的雷射光束L分割成兩個雷射光束的分束器。此時,所述分束器作為偏光分束器(polarizing beam splitter:PBS),將雷射光束用作具有互不相同偏光狀態的雷射光束。As another embodiment, the
由此,本發明的雷射加工單元300可以只利用具有特定偏光狀態的雷射光束,提高雷射加工品質。或者,可以全部利用分割成兩個的雷射光束,提高雷射加工速度。Therefore, the
如果參照圖5,雷射加工單元300照射的雷射光束L可以照射於薄膜TF。作為一個實施例,雷射光束L可以具有440 nm至1500 nm波長,保護膜PF可以由使相應波長雷射光束L透過的材質構成。因此,如圖5的(a)所示,雷射光束L可以透過保護膜PF而照射於薄膜TF的下面。而且,借助於雷射光束L,在薄膜TF的一部分被去除的同時,被加工物W的上面與薄膜TF的至少一部分可以彼此分離。此時,薄膜TF和保護膜PF可以為相互附著的狀態,因而薄膜TF與保護膜PF可以從被加工物W的上面一體分離。Referring to FIG. 5 , the laser beam L irradiated by the
如果參照圖6,雷射加工單元300照射的雷射光束L從平面觀察時,例如從XY平面觀察時,照射於薄膜TF的內部區域,使薄膜TF從被加工物W的上面翹起。另外,雷射光束L從XY平面觀察時,沿著薄膜TF的邊緣照射,可以使薄膜TF的邊緣從被加工物W的上面分離。Referring to FIG. 6 , the laser beam L irradiated by the
即,在雷射加工中,由於是在薄膜TF上面附著有保護膜PF的狀態,因而本發明一個實施例的薄膜去除裝置10可以使在照射雷射光束L的製程中發生的煙氣等異物飛散實現最小化。因此,可以防止其他薄膜TF被異物二次污染的問題。That is, in laser processing, since the protective film PF is attached to the thin film TF, the thin
圖7是顯示膜去除單元400的運轉狀態的圖。FIG. 7 is a diagram showing an operating state of the
如果參照圖7,膜去除單元400可以去除借助於雷射加工單元300而從被加工物W上面分離的薄膜TF。Referring to FIG. 7 , the
本發明一個實施例的膜去除單元400可以包括第二輥410、握爪420。The
如果被加工物W的上面與薄膜TF借助於雷射加工單元300而彼此分離,則膜去除單元400可以移動到平臺100上。膜去除單元400利用第二輥410而黏著於保護膜PF後上升,可以使薄膜TF的一部分從被加工物W的上面離開。If the upper surface of the workpiece W and the thin film TF are separated from each other by means of the
作為一個實施例,在第二輥410的外周面,可以配置有既定的黏著構件。其中,被加工物W的上面與薄膜TF為借助於雷射加工單元300而分離的狀態,相反,薄膜TF為與保護膜PF附著的狀態。因此,第二輥410在與保護膜PF上面接觸的狀態下,如果沿上下方向或左右方向移動,則保護膜PF也在附著於第二輥410的狀態下向相同方向移動。As an example, a predetermined adhesive member may be disposed on the outer peripheral surface of the
膜去除單元400可以使第二輥410向預先設置的方向移動,使薄膜TF的端部從被加工物W的上面隔開(參照圖7的(a))。The
握爪420可以使薄膜TF從被加工物W的上面完全脫離。The
作為一個實施例,握爪420可以在薄膜TF借助於第二輥410而從被加工物W上面隔開的狀態下,把持保護膜PF的端部。As an example, the
膜去除單元400可以在握爪420把持保護膜PF端部的狀態下,向預先設置的方向移動,使薄膜TF與保護膜PF從被加工物W一體脫離(參照圖7的(b))。The
圖8是顯示比較例與發明例的薄膜去除製程前後的圖。FIG. 8 is a diagram showing before and after the thin film removal process of the comparative example and the inventive example.
在圖8中,製程前顯示出薄膜TF附著於被加工物W上面的狀態,比較例1顯示出利用雷射照射裝置及吸入裝置去除了薄膜TF的狀態,比較例2顯示出利用超音波清洗機去除了薄膜TF的狀態,發明例顯示出利用本發明一個實施例的薄膜去除裝置10去除了薄膜TF的狀態。In Fig. 8, the thin film TF is attached to the workpiece W before the process. Comparative Example 1 shows the state where the thin film TF is removed by the laser irradiation device and suction device. Comparative Example 2 shows the state where the thin film TF is cleaned by ultrasonic cleaning The machine removes the thin film TF, and the invention example shows the state where the thin film TF is removed by the thin
如圖8所示,利用以往的雷射照射裝置去除薄膜TF時,會發生煙氣等異物,這種異物未被吸入裝置吸入而殘留,會使被加工物W二次污染。另外,由於在去除製程期間需持續啟動吸入裝置,因而不經濟。As shown in FIG. 8 , when the thin film TF is removed by a conventional laser irradiation device, foreign matter such as smoke is generated, and such foreign matter remains without being sucked by the suction device, causing secondary contamination of the workpiece W to be processed. In addition, it is not economical since the suction device needs to be continuously activated during the removal process.
同樣地,即使利用以往的超音波清洗機去除薄膜TF,也存在在該過程中發生的異物使被加工物W二次污染的憂慮。Similarly, even if the thin film TF is removed by a conventional ultrasonic cleaner, there is a possibility that the workpiece W may be recontaminated by foreign matter generated in the process.
相反,本發明的薄膜去除裝置10在將保護膜PF附著於要去除的薄膜TF上面的狀態下照射雷射光束L,因而使在該過程中發生的煙氣等異物飛散實現最小化,從而可以防止其他被加工物W被異物二次污染。In contrast, the thin
特別是本發明一個實施例的薄膜去除裝置10,在保護膜PF附著於薄膜TF上後,直至利用膜去除單元400去除薄膜TF時為止,可以保持保護膜PF附著於薄膜TF上面的狀態,因而可以更切實地防止其他薄膜TF和被加工物W被二次污染。In particular, the thin
如果再參照圖1,本發明一個實施例的薄膜去除裝置10可以更包括檢查單元500。Referring to FIG. 1 again, the thin
檢查單元500可以檢測被加工物W的位置,將檢測的位置相關資訊傳遞給膜附著單元200、雷射加工單元300、膜去除單元400中至少某一個。The
作為一個實施例,檢查單元500可以包括視覺攝像頭(圖上未示出)。檢查單元500可以利用所述視覺攝像頭,拍攝平臺100上安放的被加工物W而獲得影像。而且,檢查單元500可以基於拍攝的影像,判別被污染的被加工物W或不良被加工物W(更具體而言,薄膜TF被污染或不良的被加工物W)。As an example, the
另外,檢查單元500可以基於拍攝的影像,檢測被污染或不良的被加工物W的位置,將位置資訊傳遞給膜附著單元200、雷射加工單元300、膜去除單元400。In addition, the
膜附著單元200可以基於接受傳遞的被加工物W的位置資訊,將保護膜PF附著於相應被加工物W的上面。The
雷射加工單元300可以基於接受傳遞的被加工物W的位置資訊,向相應被加工物W的上面照射雷射光束L。另外,雷射控制器330可以基於接受傳遞的被加工物W的位置資訊,控制光學儀320,控制雷射光束L的光路徑和照射位置等。The
膜去除單元400可以基於接受傳遞的被加工物W的位置資訊,使薄膜TF從相應被加工物W的上面脫離。The
作為一個實施例,檢查單元500可以再次檢查薄膜TF已脫離的被加工物W上面,檢查薄膜TF是否正常脫離。As an example, the
另一方面,雖然顯示了在被加工物W安放於平臺100上面的狀態下,膜附著單元200、雷射加工單元300、膜去除單元400、檢查單元500接近平臺100進行運轉的情形,但並非限定於此。On the other hand, although the
例如,膜附著單元200、雷射加工單元300、膜去除單元400、檢查單元500配置於一條線上,可以在平臺100沿著所述線向一個方向移動的同時,實現對被加工物W的加工。For example, the
圖9是顯示本發明另一實施例的薄膜去除方法的圖。FIG. 9 is a diagram showing a thin film removal method according to another embodiment of the present invention.
如果參照圖9,本發明的薄膜去除方法可以包括:在配置於被加工物W的薄膜TF上附著保護膜PF的步驟S100;照射雷射光束L而使薄膜TF與保護膜PF從被加工物W一體分離的步驟S200;使薄膜TF從被加工物W脫離的步驟S300。Referring to FIG. 9 , the thin film removal method of the present invention may include: a step S100 of attaching a protective film PF on the thin film TF disposed on the workpiece W; Step S200 of integrally separating W; Step S300 of detaching the thin film TF from the workpiece W.
首先,如果參照圖1至圖9,在被加工物W借助於移送單元(圖上未示出)等而安放於平臺100上的狀態下,利用膜附著單元200而將保護膜PF附著於被加工物W上面配置的薄膜TF上。First, referring to FIGS. 1 to 9 , in a state where the workpiece W is placed on the
更具體而言,利用膜附著單元200的吸附墊210,對載入於載入單元(圖上未示出)上的保護膜PF進行吸附、支撐。然後,在使膜附著單元200位於被加工物W的薄膜上的狀態下下降,將保護膜PF附著於薄膜TF上。在保護膜PF的下面,可以包括諸如OCR或OCA的黏合劑。More specifically, the protective film PF loaded on the loading unit (not shown in the figure) is adsorbed and supported by the
將保護膜PF附著於薄膜TF上後,利用膜附著單元200的第一輥220對保護膜PF加壓。因此,保護膜PF與薄膜TF更緊密地附著,可以去除在保護膜PF與薄膜TF之間存在的氣泡。After the protective film PF is attached to the film TF, the protective film PF is pressed by the
然後,利用雷射加工單元300來加工附著有保護膜PF的薄膜TF。作為一個實施例,雷射加工單元300的雷射振盪器310生成雷射光束L,控制光學儀320,控制雷射光束L的照射位置和光路徑,照射於被加工物W的上面。Then, the thin film TF to which the protective film PF is attached is processed by the
此時,雷射光束L的波長可以為440 nm至1500 nm,具有相應波長的雷射光束L透過保護膜PF,照射於在被加工物W上面附著的薄膜TF的下部。因此,在薄膜TF的一部分被去除的同時,可以將薄膜TF與保護膜PF從被加工物W的上面一體分離。At this time, the wavelength of the laser beam L can be 440 nm to 1500 nm, and the laser beam L with the corresponding wavelength passes through the protective film PF and irradiates the lower part of the thin film TF attached on the workpiece W. Therefore, the thin film TF and the protective film PF can be integrally separated from the upper surface of the workpiece W at the same time as a part of the thin film TF is removed.
作為一個實施例,分離薄膜TF的步驟S200可以包括:劃影線(hatching)步驟,即,將雷射光束L照射於薄膜TF內側區域的步驟;修邊(trimming)步驟,即,沿著薄膜TF的邊緣照射雷射光束L的步驟。As an example, the step S200 of separating the thin film TF may include: a hatching step, that is, a step of irradiating a laser beam L on the inner region of the thin film TF; a trimming step, that is, a step of A step of irradiating the edge of the TF with a laser beam L.
在劃影線步驟中,從圖6的XY平面觀察時,將雷射光束L照射於薄膜TF的內側區域,薄膜TF可以從被加工物W的上面整體翹起。作為一個實施例,在劃影線步驟中,控制光學儀320的振鏡321a、321b,快速控制雷射光束L的照射位置,從而可以迅速實施。In the hatching step, when viewed from the XY plane of FIG. 6 , the laser beam L is irradiated on the inner region of the thin film TF, so that the thin film TF can lift up from the upper surface of the workpiece W as a whole. As an example, in the hatching step, the vibrating
在修邊步驟中,從圖6的XY平面觀察時,可以沿著薄膜TF的邊緣照射雷射光束L,使得薄膜TF的邊緣從被加工物W的上面分離。In the trimming step, the edge of the film TF may be separated from the upper surface of the workpiece W by irradiating the laser beam L along the edge of the film TF as viewed from the XY plane of FIG. 6 .
作為一個實施例,可以在實施劃影線步驟後,實施修邊步驟。即,在劃影線步驟中,薄膜TF的邊緣可以是附著於被加工物W的上面的狀態。因此,在劃影線步驟中,可以防止薄膜TF的邊緣翹起,更精密地分離薄膜TF。As an example, the trimming step may be performed after the hatching step is performed. That is, in the hatching step, the edge of the thin film TF may be attached to the upper surface of the workpiece W. As shown in FIG. Therefore, in the hatching step, it is possible to prevent the edge of the thin film TF from lifting, and to separate the thin film TF more precisely.
然後,利用膜去除單元400,使分離的薄膜TF從被加工物W的上面脫離。作為一個實施例,使膜去除單元400的第二輥410接觸保護膜PF的上面。第二輥410在輥的外周面配置有既定的黏著構件,使第二輥410向預先設置的方向移動,從而可以使保護膜PF向相同方向移動。Then, the separated thin film TF is detached from the upper surface of the workpiece W by the
其中,薄膜TF為從被加工物W的上面分離的狀態或與保護膜PF附著的狀態。因此,可以在使第二輥410附著於保護膜PF邊緣的狀態下向上升高,將保護膜PF和薄膜TF一體升高。Here, the thin film TF is in a state of being separated from the upper surface of the workpiece W or is in a state of being attached to the protective film PF. Therefore, the protective film PF and the film TF can be lifted up integrally while the
然後,利用膜去除單元400的握爪420,使薄膜TF從被加工物W的上面脫離。握爪420可以把持借助於第二輥410而升高的保護膜PF端部,使握爪420向預先設置的方向移動,從而可以使保護膜PF與薄膜TF從被加工物W的上面一體脫離。Then, the thin film TF is detached from the upper surface of the workpiece W by the
作為一個實施例,可以更包括利用檢查單元500來檢測被加工物W的位置的步驟。更具體而言,在將保護膜PF附著於在被加工物W上面配置的薄膜TF上之前,可以利用檢查單元500的所述視覺攝像頭,拍攝被加工物W的影像。As an example, a step of using the
然後,檢查單元500可以基於拍攝的影像,算出被加工物W的位置相關資訊。Then, the
另外,可以更包括檢查單元500將被加工物W的位置資訊傳遞給膜附著單元200、雷射加工單元300、膜去除單元400中至少某一個的步驟。In addition, it may further include a step in which the
因此,在附著保護膜PF的步驟中,膜附著單元200可以基於接受傳遞的被加工物W的位置資訊,使保護膜PF位於薄膜TF上。Therefore, in the step of attaching the protective film PF, the
另外,在分離薄膜TF的步驟中,雷射加工單元300基於接受傳遞的被加工物W的位置資訊,控制雷射振盪器310、光學儀320,從而可以實施雷射加工。In addition, in the step of separating the thin film TF, the
另外,在使薄膜TF脫離的步驟中,膜去除單元400可以基於接受傳遞的被加工物W的位置資訊,使薄膜TF從被加工物W的上面脫離。In addition, in the step of detaching the thin film TF, the
作為一個實施例,可以更包括利用檢查單元500來檢查被加工區域的步驟。更具體而言,利用膜去除單元400去除薄膜TF後,可以利用檢查單元500,拍攝去除了薄膜TF的被加工物W的上面。檢查單元500可以基於拍攝的影像,判斷被加工物W上面的污染狀態或薄膜TF是否去除等。As an embodiment, a step of using the
本發明一個實施例的薄膜去除裝置10及薄膜去除方法可以將保護膜PF附著於在被污染或不良的被加工物W上面配置的薄膜TF上,照射透過保護膜PF的雷射光束L,使薄膜TF與保護膜PF從被加工物W的上面一體脫離,可以防止被加工物W因雷射照射中發生的異物而被二次污染。The thin
本發明一個實施例的薄膜去除裝置10及薄膜去除方法在附著有薄膜TF和保護膜PF的狀態下進行製程,從而可以切實防止其他被加工物W被二次污染。The thin
在本說明書中,雖然以限定本發明的實施例為中心進行了說明,但在本發明的範圍內,可以有多樣的實施例。另外,雖然未說明,但均等的手段也可以直接結合於本發明。因此,本發明真正的保護範圍應根據以下申請專利範圍確定。In this specification, although the examples which limited the present invention were mainly described, various examples are possible within the scope of the present invention. In addition, although not described, equivalent means can also be directly incorporated in the present invention. Therefore, the true scope of protection of the present invention should be determined according to the scope of the following claims.
10:薄膜去除裝置
100:平臺
200:膜附著單元
210:吸附墊
220:第一輥
300:雷射加工單元
310:雷射振盪器
320:光學儀
321a、321b:振鏡
322:平場聚焦透鏡
330:雷射控制器
400:膜去除單元
410:第二輥
420:握爪
500:檢查單元
L:雷射光束
PF:保護膜
TF:薄膜
S:基板
S100、S200、S300:步驟
W:被加工物10: Thin film removal device
100: Platform
200: membrane attachment unit
210: adsorption pad
220: first roll
300:Laser processing unit
310:Laser oscillator
320:
圖1是顯示本發明一個實施例的薄膜去除裝置的圖。 圖2是顯示圖1的膜附著單元的運轉狀態的圖。 圖3是顯示圖2的保護膜的多樣形態的圖。 圖4是顯示圖1的雷射加工單元的一個示例的圖。 圖5及圖6是顯示圖4的雷射加工單元的運轉狀態的圖。 圖7是顯示膜去除單元的運轉狀態的圖。 圖8是顯示比較例與發明例的薄膜去除製程前後的圖。 圖9是顯示本發明另一實施例的薄膜去除方法的圖。FIG. 1 is a diagram showing a thin film removing apparatus of one embodiment of the present invention. FIG. 2 is a diagram showing an operating state of the film adhesion unit shown in FIG. 1 . FIG. 3 is a diagram showing various forms of the protective film of FIG. 2 . FIG. 4 is a diagram showing an example of the laser processing unit of FIG. 1 . 5 and 6 are diagrams showing the operating state of the laser processing unit of FIG. 4 . Fig. 7 is a diagram showing an operating state of a film removal unit. FIG. 8 is a diagram showing before and after the thin film removal process of the comparative example and the inventive example. FIG. 9 is a diagram showing a thin film removal method according to another embodiment of the present invention.
10:薄膜去除裝置10: Thin film removal device
100:平臺100: Platform
200:膜附著單元200: membrane attachment unit
300:雷射加工單元300:Laser processing unit
400:膜去除單元400: membrane removal unit
500:檢查單元500: check unit
S:基板S: Substrate
W:被加工物W: processed object
Claims (7)
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