TWI802050B - 光電能量轉換件 - Google Patents

光電能量轉換件 Download PDF

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TWI802050B
TWI802050B TW110138812A TW110138812A TWI802050B TW I802050 B TWI802050 B TW I802050B TW 110138812 A TW110138812 A TW 110138812A TW 110138812 A TW110138812 A TW 110138812A TW I802050 B TWI802050 B TW I802050B
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energy conversion
generating unit
conversion element
photoelectric energy
light
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張修誠
周勝千
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海韻電子工業股份有限公司
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30Electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125Composite devices with photosensitive elements and electroluminescent elements within one single body
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582Buck-boost converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion systems, e.g. maximum power point trackers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
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Abstract

一種光電能量轉換件,應用於一電源轉換電路中,該光電能量轉換件用以取代該電源轉換電路中普遍使用的一磁性元件。該光電能量轉換件包含一殼體,至少一光線產生單元,以及至少一光伏產生單元,該光線產生單元與該光伏產生單元封裝於該殼體內,該光伏產生單元接受該光線產生單元於該殼體內產生的一光線並基於該光線產生電能,該光伏產生單元作為該光電能量轉換件的一後級電路的供電來源。

Description

光電能量轉換件
本發明涉及一種光電能量轉換件,尤指一種內含光線產生單元以及光伏產生單元以取代習用磁性元件的光電能量轉換件。
電路基礎組成元件主要有三,電阻、電容以及磁性元件,磁性元件更包含電感及變壓器。
於電力轉換電路中,磁性元件雖作為能量轉換的主要角色,但因磁性元件是由線圈及鐵芯組成,磁特性會根據磁性元件的設計而有不同,電路設計上需考慮磁性元件的磁特性(磁飽和、磁滯等),如存在多個磁性元件的配合,例如電感搭配變壓器,更需考慮諧振相關參數。導致電路的整體設計及相關控制需針對磁性元件的參數進行因應設計。
此外,磁性元件實施磁能轉換電能時,除會產生轉換損失之外,更對周遭配合的電子元件或鄰近的電子元件造成干擾。
本發明的主要目的,解決磁性元件所衍生的實務問題。
為達前述目的,本發明提供一種光電能量轉換件,該光電能量轉換件應用於一電源轉換電路中。該光電能量轉換件包含一殼體,至少一光線產生單元,以及至少一光伏產生單元。該殼體內成形一腔室,該光線產生單元與該光伏產生單元封裝於該殼體內並位於該腔室,該光線產生單元與該光伏產生單元分別為一半導體結構,該光伏產生單元接受該光線產生單元於該殼 體內產生的一光線並基於該光線產生電能,該光伏產生單元作為該光電能量轉換件的一後級電路的供電來源。
一實施例中,該光電能量轉換件包含複數該光線產生單元,該些光線產生單元以MxN矩陣排列,M≧2且N≧2。
一實施例中,該些光線產生單元以後述其中一種方式產生電性連接:串聯、並聯以及串並聯。
一實施例中,該光電能量轉換件包含複數該光伏產生單元,該些光伏產生單元以PxO矩陣排列,P≧2且O≧2。
一實施例中,該些光線產生單元的數量與該些光伏產生單元的數量不相等。
一實施例中,該些光線產生單元以後述其中一種方式產生電性連接:串聯、並聯以及串並聯。
一實施例中,該光線產生單元與該光伏產生單元於該殼體內間隔設置。
透過本發明前述實施,相較於習用具有以下特點:該光電能量轉換件於能量轉換過程中未產生大量干擾能量,而可簡化整體電路的設計與控制。
10:光電能量轉換件
11:殼體
12:光線產生單元
121:投光面
13:光伏產生單元
131:受光面
20:開關元件
圖1,為本發明光電能量轉換件的結構示意圖。
圖2,為本發明光電能量轉換件一實施例的單元示意圖。
圖3,為本發明光電能量轉換件另一實施例的單元示意圖。
圖4,為本發明光電能量轉換件實施於隔離型降壓轉換電路的示意圖。
圖5,為本發明光電能量轉換件實施於隔離型升壓轉換電路的示意圖。
圖6,為本發明光電能量轉換件實施於隔離型升降壓轉換電路的示意圖。
圖7,為本發明光電能量轉換件實施於具回授控制的隔離型升壓、降壓及升降壓轉換電路的示意圖。
圖8,為本發明光電能量轉換件實施於非隔離型降壓轉換器的示意圖。
圖9,為本發明光電能量轉換件實施於非隔離型升壓轉換器的示意圖。
圖10,為本發明光電能量轉換件實施於非隔離型升降壓轉換器的示意圖。
圖11,為本發明光電能量轉換件實施於具回授控制的非隔離型升壓、降壓及升降壓轉換電路的示意圖
本發明詳細說明及技術內容,現就配合圖式說明如下:請參閱圖1至圖3,本發明提供一種光電能量轉換件10,該光電能量轉換件10可取代習用電源轉換電路中使用的磁性元件(如電感、變壓器),亦即該光電能量轉換件10可被視一用以構成一電路的零件。具體來說,該光電能量轉換件10被封裝為一獨立構件,該光電能量轉換件10可以一積體電路(Integrated circuit,縮寫IC)的型態實施。該光電能量轉換件10包含一殼體11,至少一光線產生單元12,以及至少一光伏產生單元13。該光線產生單元12與該光伏產生單元13被同時封裝於該殼體11內,該光線產生單元12以及該光伏產生單元13分別藉由與之連接的複數電極,與一外部電路連接。又,該光線產生單元12與該光伏產生單元13不存在直接或間接的連接關係,以達成本發明欲實現的電源隔離。一實施例中,該光線產生單元12與該光伏產生單元13之間可存在一間距。另一方面,該光線產生單元12可被設計成具有一面對該光伏產生單元13的投光面121,同理為令該光伏產生單元13可確實地接收該光線產生單元12所投出的光線,該光伏產生單元13可被設計成具有一面 對該光線產生單元12的受光面131。再者,前述該投光面121或該受光面131非以垂直面為限制,而可搭配該殼體11內的結構選用較適當者。一實施例中,該殼體11內可成形適當大小的一腔室結構,以利光線的傳遞。該腔室結構至少需符合足令該光線產生單元12與該光伏產生單元13封裝其中的大小,進一步地,前指該腔室結構更可基於該光線產生單元12與該光伏產生單元13的光路需求進行調整設計。
承上,該光線產生單元12與該光伏產生單元13可分別以半導體結構實施。
請搭配圖4,再者,本發明該光電能量轉換件10實施時,該光線產生單元12透過所連接該些電極自一電力輸入源或一前級電路取得電力,並基於所取得的電力發光。該光線產生單元12產生的光線投向該光伏產生單元13,該光伏產生單元13受光後,即將光能轉換為電能,該光線產生單元12透過所連接的該些電極向接續於該光電能量轉換件10的一後級電路輸出電能,亦即本發明該光伏產生單元13將作為該後級電路的供電來源。需了解到,本發明該光電能量轉換件10與現有的一光耦合器不同,該光耦合器僅能作為訊號的傳遞,與本發明述求的能量傳遞不同,該光耦合器無法作為該後級電路的供電來源。
承上,本發明該光線產生單元12於一實施例中是以一發光二極體(LED)實施。為達到高效率地能量轉換,該發光二極體更可選光波長或指向性強者實施。再者,本發明該光線產生單元12非以單一實施為限,可基於升降壓需求或耐壓需求來增加或減少使用的數量。如該光線產生單元12是以複數實施,複數該光線產生單元12可以串聯(M個單位)、並聯(N個單位)或串並聯方式實施。進一步地,複數該光線產生單元12更可以MxN矩陣排列,其 中M≧2且N≧2,如圖3所示。另一方面,本發明該光伏產生單元13未與任何電力源連接,該光伏產生單元13透過所連接的電極與後級電路或負載連接,該光伏產生單元13是名符其實的電力輸出者。該光伏產生單元13工作原理是將所接受的光能經過自身所屬的光電半導體結構轉換為電能,並向後級輸出。一實施例中,該光伏產生單元13可為光伏電池。該光伏產生單元13同樣可為複數實施,複數該光伏產生單元13可以串聯(P個單位)、並聯(O個單位)或串並聯方式實施。進一步地,複數該光伏產生單元13同樣可以PxO矩陣排列,其中P≧2且O≧2,如圖3所示。承此,本發明可以透過該光線產生單元12串並聯方式及該光伏產生單元13串並聯方式來因應不同的輸入電壓、輸出電壓以及功率需求。
本文於提供該光電能量轉換件10作為該電源轉換電路所屬元件的示意。圖4為本發明該光電能量轉換件10實施於一隔離型降壓轉換電路的示意,於此實施例中,該光電能量轉換件10中的該光線產生單元12數量可多於該光伏產生單元13的數量。又,圖5為本發明該光電能量轉換件10實施於一隔離型升壓轉換電路的示意,於此實施例中,該光電能量轉換件10中的該光線產生單元12數量可少於該光伏產生單元13的數量。又,圖6為本發明該光電能量轉換件10實施於一隔離型升降壓轉換電路的示意,於此實施例中,該光電能量轉換件10與一開關元件20配合,該開關元件20基於一脈波寬度調變訊號(PWM)產生啟閉,以令該光電能量轉換件10產生升壓或降壓的動作。又,圖7為本發明該光電能量轉換件10藉由複數該光線產生單元12串並聯方式與複數該光伏產生單元13串並聯方式實施於一具回授控制的隔離型升壓、降壓及升降壓轉換電路的示意。又,圖8為本發明該光電能量轉換件10實施於一非隔離型降壓轉換器的示意。又,圖9為本發明該光電能量轉換件 10實施於一非隔離型升壓轉換器的示意。又,圖10為本發明該光電能量轉換件10實施於一非隔離型升降壓轉換器的示意。又,圖11為本發明該光電能量轉換件10實施於一具回授控制的非隔離型升壓、降壓及升降壓轉換電路的示意。
綜上所述,本發明該光電能量轉換件10於能量轉換過程中未產生大量干擾能量,而可簡化整體電路的設計與控制。本發明藉由該光電能量轉換件10具體解決以下問題:
1.習用磁性元件存在複雜的特性問題,限制著電源轉換電路的實施,且磁性元件於研製過程中亦因些微缺失而改變特性,進而影響電源轉換電路的效率。
2.磁性元件採用架構大幅影響著該電源轉換電路的轉換損失。
3.習用磁性元件於磁能轉換電能的同時將產生大量干擾能量,而容易影響配合的電子元件或鄰近設置的其他電子元件。
綜上述僅為本發明的一較佳實施例而已,當不能以此限定本發明實施範圍,即凡依本發明申請專利範圍所作的均等變化與修飾,皆應仍屬本發明專利涵蓋範圍。
10:光電能量轉換件
12:光線產生單元
13:光伏產生單元

Claims (8)

  1. 一種光電能量轉換件,應用於一電源轉換電路,以一積體電路的型態實施,該光電能量轉換件包含:一殼體;一前級電路;至少一光線產生單元,連接該前級電路以取得電力;至少一光伏產生單元;一後級電路,連接該至少一光伏產生單元;一開關元件,連接該前級電路與該至少一光線產生單元;以及一回授控制單元,連接該開關元件與該至少一光伏產生單元;其中,該光線產生單元與該光伏產生單元同時被封裝於該殼體內,該光伏產生單元接受該光線產生單元於該殼體內產生的一光線並基於該光線產生電能,該光伏產生單元作為該光電能量轉換件的該後級電路的供電來源,該回授控制單元以一脈波寬度調變訊號(PWM)控制該開關單元以令該光電能量轉換件產生升壓或降壓的動作。
  2. 如請求項1所述的光電能量轉換件,其中,該光電能量轉換件包含複數該光線產生單元,該些光線產生單元以MxN矩陣排列,M≧2且N≧2。
  3. 如請求項2所述的光電能量轉換件,其中,該些光線產生單元以後述其中一種方式產生電性連接:串聯、並聯以及串並聯。
  4. 如請求項2所述的光電能量轉換件,其中,該光電能量轉換件包含複數該光伏產生單元,該些光伏產生單元以PxO矩陣排列,P≧2且O≧2。
  5. 如請求項4所述的光電能量轉換件,其中,該些光線產生單元的數量與該些光伏產生單元的數量不相等。
  6. 如請求項4所述的光電能量轉換件,其中,該些光線產生單元以後述其中一種方式產生電性連接:串聯、並聯以及串並聯。
  7. 如請求項1所述的光電能量轉換件,其中,該光線產生單元與該光伏產生單元於該殼體內間隔設置。
  8. 如請求項1所述的光電能量轉換件,其中,該光電能量轉換件包含複數該光伏產生單元,該些光伏產生單元以PxO矩陣排列,P≧2且O≧2。
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