TWI801073B - 多通道記憶體裝置 - Google Patents

多通道記憶體裝置 Download PDF

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Publication number
TWI801073B
TWI801073B TW111100043A TW111100043A TWI801073B TW I801073 B TWI801073 B TW I801073B TW 111100043 A TW111100043 A TW 111100043A TW 111100043 A TW111100043 A TW 111100043A TW I801073 B TWI801073 B TW I801073B
Authority
TW
Taiwan
Prior art keywords
memory device
channel memory
channel
memory
Prior art date
Application number
TW111100043A
Other languages
English (en)
Other versions
TW202329145A (zh
Inventor
林志豐
Original Assignee
華邦電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 華邦電子股份有限公司 filed Critical 華邦電子股份有限公司
Priority to TW111100043A priority Critical patent/TWI801073B/zh
Priority to US17/903,052 priority patent/US12112822B2/en
Application granted granted Critical
Publication of TWI801073B publication Critical patent/TWI801073B/zh
Publication of TW202329145A publication Critical patent/TW202329145A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
TW111100043A 2022-01-03 2022-01-03 多通道記憶體裝置 TWI801073B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW111100043A TWI801073B (zh) 2022-01-03 2022-01-03 多通道記憶體裝置
US17/903,052 US12112822B2 (en) 2022-01-03 2022-09-06 Multi-channel memory device capable of switching redundancy memory blocks to replace failed memory block

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111100043A TWI801073B (zh) 2022-01-03 2022-01-03 多通道記憶體裝置

Publications (2)

Publication Number Publication Date
TWI801073B true TWI801073B (zh) 2023-05-01
TW202329145A TW202329145A (zh) 2023-07-16

Family

ID=86992177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111100043A TWI801073B (zh) 2022-01-03 2022-01-03 多通道記憶體裝置

Country Status (2)

Country Link
US (1) US12112822B2 (zh)
TW (1) TWI801073B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11948625B2 (en) * 2021-09-09 2024-04-02 Winbond Electronics Corporation Systems on chips, memory circuits, and methods for accessing data in a memory circuit directly using a transistor-level operation signal

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011163213A1 (en) * 2010-06-25 2011-12-29 Qualcomm Incorporated Dynamic interleaving of multi-channel memory
TWI474176B (zh) * 2011-03-04 2015-02-21 Micron Technology Inc 與自第一介面至第二介面之操作性轉變相關聯之裝置、電子設備及方法
US20190272867A1 (en) * 2014-07-09 2019-09-05 Samsung Electronics Co., Ltd. Multi channel semiconductor device having multi dies and operation method thereof
US10658012B2 (en) * 2012-09-06 2020-05-19 Ovonyx Memory Technology, Llc Apparatus and methods to provide power management for memory devices
TWI708371B (zh) * 2018-09-20 2020-10-21 美商美光科技公司 堆疊記憶體佈線技術

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8904098B2 (en) * 2007-06-01 2014-12-02 Netlist, Inc. Redundant backup using non-volatile memory
TWI408689B (zh) * 2009-04-14 2013-09-11 Jmicron Technology Corp 存取儲存裝置的方法及相關控制電路
KR101984789B1 (ko) * 2012-10-12 2019-06-04 에스케이하이닉스 주식회사 반도체 메모리 장치
US20150036416A1 (en) 2013-08-05 2015-02-05 Samsung Electronics Co., Ltd. Multi-channel memory device with independent channel power supply structure and method of controlling power net
KR20230012063A (ko) * 2021-03-24 2023-01-25 양쯔 메모리 테크놀로지스 씨오., 엘티디. 리던던트 뱅크를 사용하여 결함 있는 메인 뱅크를 복구하기 위한 메모리 디바이스
US11803444B1 (en) * 2022-06-15 2023-10-31 Micron Technology, Inc. Cooperative memory subsystem data recovery

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011163213A1 (en) * 2010-06-25 2011-12-29 Qualcomm Incorporated Dynamic interleaving of multi-channel memory
TWI474176B (zh) * 2011-03-04 2015-02-21 Micron Technology Inc 與自第一介面至第二介面之操作性轉變相關聯之裝置、電子設備及方法
US10658012B2 (en) * 2012-09-06 2020-05-19 Ovonyx Memory Technology, Llc Apparatus and methods to provide power management for memory devices
US20190272867A1 (en) * 2014-07-09 2019-09-05 Samsung Electronics Co., Ltd. Multi channel semiconductor device having multi dies and operation method thereof
TWI708371B (zh) * 2018-09-20 2020-10-21 美商美光科技公司 堆疊記憶體佈線技術

Also Published As

Publication number Publication date
TW202329145A (zh) 2023-07-16
US12112822B2 (en) 2024-10-08
US20230215509A1 (en) 2023-07-06

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