TWI800156B - 曝光遮罩 - Google Patents

曝光遮罩 Download PDF

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Publication number
TWI800156B
TWI800156B TW110146880A TW110146880A TWI800156B TW I800156 B TWI800156 B TW I800156B TW 110146880 A TW110146880 A TW 110146880A TW 110146880 A TW110146880 A TW 110146880A TW I800156 B TWI800156 B TW I800156B
Authority
TW
Taiwan
Prior art keywords
exposure mask
mask
exposure
Prior art date
Application number
TW110146880A
Other languages
English (en)
Other versions
TW202232233A (zh
Inventor
鄭嶽青
曾琳雅
盧俊佑
Original Assignee
采鈺科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 采鈺科技股份有限公司 filed Critical 采鈺科技股份有限公司
Publication of TW202232233A publication Critical patent/TW202232233A/zh
Application granted granted Critical
Publication of TWI800156B publication Critical patent/TWI800156B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110146880A 2021-02-03 2021-12-15 曝光遮罩 TWI800156B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/166,633 2021-02-03
US17/166,633 US20220244631A1 (en) 2021-02-03 2021-02-03 Exposure mask

Publications (2)

Publication Number Publication Date
TW202232233A TW202232233A (zh) 2022-08-16
TWI800156B true TWI800156B (zh) 2023-04-21

Family

ID=76325424

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110146880A TWI800156B (zh) 2021-02-03 2021-12-15 曝光遮罩

Country Status (5)

Country Link
US (1) US20220244631A1 (zh)
EP (1) EP4040232A1 (zh)
JP (1) JP7270683B2 (zh)
CN (1) CN114859654A (zh)
TW (1) TWI800156B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060116491A (ko) * 2005-05-10 2006-11-15 삼성전자주식회사 포토마스크
CN109661616A (zh) * 2016-08-30 2019-04-19 Asml荷兰有限公司 图案化叠层优化
TW201926542A (zh) * 2012-08-28 2019-07-01 日商尼康股份有限公司 圖案形成裝置
CN210721012U (zh) * 2019-09-11 2020-06-09 杭州士兰集昕微电子有限公司 一种光刻版

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396569B2 (en) * 1999-09-02 2002-05-28 Texas Instruments Incorporated Image displacement test reticle for measuring aberration characteristics of projection optics
KR100390908B1 (ko) 2001-04-30 2003-07-10 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정 평가용 마스크
JP2003315515A (ja) 2003-02-28 2003-11-06 Seiko Epson Corp マスク、光反射膜付き基板、光反射膜の製造方法、及び光学表示装置、並びに電子機器
WO2004104699A1 (ja) * 2003-05-26 2004-12-02 Fujitsu Limited パターン寸法補正
JP2005258387A (ja) 2003-07-29 2005-09-22 Sony Corp 露光用マスクおよびマスクパターンの製造方法
DE102005009805A1 (de) 2005-03-03 2006-09-14 Infineon Technologies Ag Lithographiemaske und Verfahren zum Erzeugen einer Lithographiemaske
US7691544B2 (en) * 2006-07-21 2010-04-06 Intel Corporation Measurement of a scattered light point spread function (PSF) for microelectronic photolithography
KR100932334B1 (ko) * 2007-11-29 2009-12-16 주식회사 하이닉스반도체 반도체 소자의 하드 마스크 패턴 형성 방법
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
WO2013121485A1 (ja) * 2012-02-13 2013-08-22 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法
US8883372B2 (en) * 2012-06-05 2014-11-11 Nanya Technology Corp. Reticle with composite polarizer and method of simultaneous optimization of imaging of a set of different patterns
CN109390217B (zh) * 2017-08-09 2020-09-25 华邦电子股份有限公司 光掩膜及半导体装置的形成方法
CN110707085B (zh) * 2018-09-07 2022-05-03 联华电子股份有限公司 半导体装置及其形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060116491A (ko) * 2005-05-10 2006-11-15 삼성전자주식회사 포토마스크
TW201926542A (zh) * 2012-08-28 2019-07-01 日商尼康股份有限公司 圖案形成裝置
CN109661616A (zh) * 2016-08-30 2019-04-19 Asml荷兰有限公司 图案化叠层优化
CN210721012U (zh) * 2019-09-11 2020-06-09 杭州士兰集昕微电子有限公司 一种光刻版

Also Published As

Publication number Publication date
JP2022119160A (ja) 2022-08-16
TW202232233A (zh) 2022-08-16
US20220244631A1 (en) 2022-08-04
JP7270683B2 (ja) 2023-05-10
CN114859654A (zh) 2022-08-05
EP4040232A1 (en) 2022-08-10

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