TWI799577B - 電鍍設備及電鍍方法 - Google Patents
電鍍設備及電鍍方法 Download PDFInfo
- Publication number
- TWI799577B TWI799577B TW108115766A TW108115766A TWI799577B TW I799577 B TWI799577 B TW I799577B TW 108115766 A TW108115766 A TW 108115766A TW 108115766 A TW108115766 A TW 108115766A TW I799577 B TWI799577 B TW I799577B
- Authority
- TW
- Taiwan
- Prior art keywords
- electroplating
- equipment
- electroplating method
- electroplating equipment
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Automation & Control Theory (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810487847.5 | 2018-05-21 | ||
CN201810487847.5A CN110512248B (zh) | 2018-05-21 | 2018-05-21 | 电镀设备及电镀方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202003887A TW202003887A (zh) | 2020-01-16 |
TWI799577B true TWI799577B (zh) | 2023-04-21 |
Family
ID=68616017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108115766A TWI799577B (zh) | 2018-05-21 | 2019-05-07 | 電鍍設備及電鍍方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11926920B2 (zh) |
JP (1) | JP7505985B2 (zh) |
KR (1) | KR20210011983A (zh) |
CN (1) | CN110512248B (zh) |
SG (1) | SG11202011564RA (zh) |
TW (1) | TWI799577B (zh) |
WO (1) | WO2019223499A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114540921A (zh) * | 2020-11-26 | 2022-05-27 | 盛美半导体设备(上海)股份有限公司 | 电镀装置及方法 |
CN114959842B (zh) * | 2021-02-18 | 2024-06-07 | 日月光半导体制造股份有限公司 | 电镀装置及制造封装结构的方法 |
CN114262918A (zh) * | 2021-12-02 | 2022-04-01 | 中国电子科技集团公司第十八研究所 | 一种晶圆电镀用的等电势装置、晶圆电镀装置及电镀方法 |
CN115323470B (zh) * | 2022-10-11 | 2023-03-10 | 之江实验室 | 一种实现多片晶圆电镀的装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050067290A1 (en) * | 2003-09-30 | 2005-03-31 | Matthias Bonkass | Method and system for automatically controlling a current distribution of a multi-anode arrangement during the plating of a metal on a substrate surface |
US20050109611A1 (en) * | 1998-07-10 | 2005-05-26 | Woodruff Daniel J. | Electroplating apparatus with segmented anode array |
US20050173241A1 (en) * | 2004-02-06 | 2005-08-11 | Chalupa Radek P. | Apparatus having plating solution container with current applying anodes |
TW200837225A (en) * | 2007-03-15 | 2008-09-16 | Taiwan Semiconductor Mfg | Apparatuses for electrochemical deposition, conductive layers on semiconductor wafer, and fabrication methods thereof |
TW201634761A (zh) * | 2015-01-27 | 2016-10-01 | 應用材料股份有限公司 | 具有適用於凹槽的接觸環密封及竊流電極的電鍍設備 |
TW201718955A (zh) * | 2015-09-02 | 2017-06-01 | 應用材料股份有限公司 | 具有電流取樣電極的電鍍處理器 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382803A (en) | 1991-05-28 | 1995-01-17 | Tokyo Electron Limited | Ion injection device |
JP3289459B2 (ja) * | 1993-12-29 | 2002-06-04 | カシオ計算機株式会社 | メッキ方法及びメッキ装置 |
US6027631A (en) * | 1997-11-13 | 2000-02-22 | Novellus Systems, Inc. | Electroplating system with shields for varying thickness profile of deposited layer |
JP3523197B2 (ja) | 1998-02-12 | 2004-04-26 | エーシーエム リサーチ,インコーポレイティド | メッキ設備及び方法 |
JP2001316887A (ja) | 2000-05-08 | 2001-11-16 | Tokyo Electron Ltd | メッキ処理装置 |
JP2003027291A (ja) | 2001-07-10 | 2003-01-29 | Tokyo Electron Ltd | 液処理装置および液処理方法 |
WO2005033377A2 (en) | 2003-09-30 | 2005-04-14 | Advanced Micro Devices, Inc. | A method and a system for automatically controlling a current distribution of a multi-anode arrangement during the plating of a metal on a substrate surface |
TW200617214A (en) * | 2004-08-26 | 2006-06-01 | Surfect Technologies Inc | Dynamic profile anode |
US7368042B2 (en) | 2004-12-30 | 2008-05-06 | United Microelectronics Corp. | Electroplating apparatus including a real-time feedback system |
TWI384095B (zh) * | 2007-01-29 | 2013-02-01 | Applied Materials Inc | 晶圓電化學處理設備及其方法 |
DE102009023769A1 (de) * | 2009-05-22 | 2010-11-25 | Hübel, Egon, Dipl.-Ing. (FH) | Verfahren und Vorrichtung zum gesteuerten elektrolytischen Behandeln von dünnen Schichten |
CN102383174B (zh) * | 2010-09-01 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | 电镀阳极 |
TWI550139B (zh) * | 2011-04-04 | 2016-09-21 | 諾菲勒斯系統公司 | 用於裁整均勻輪廓之電鍍裝置 |
US10234261B2 (en) | 2013-06-12 | 2019-03-19 | Applied Materials, Inc. | Fast and continuous eddy-current metrology of a conductive film |
US9988733B2 (en) | 2015-06-09 | 2018-06-05 | Lam Research Corporation | Apparatus and method for modulating azimuthal uniformity in electroplating |
CN106917121A (zh) * | 2017-03-02 | 2017-07-04 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种晶圆电镀装置及电镀方法 |
CN207159408U (zh) * | 2017-08-03 | 2018-03-30 | 上海华力微电子有限公司 | 一种阳极板结构及铜电镀机台 |
US10494731B2 (en) * | 2017-12-11 | 2019-12-03 | Applied Materials, Inc. | Electroplating dynamic edge control |
CN108754590A (zh) * | 2018-08-22 | 2018-11-06 | 深圳市创智成功科技有限公司 | 导电环、基于其的供电装置及基于供电装置的电镀治具 |
-
2018
- 2018-05-21 CN CN201810487847.5A patent/CN110512248B/zh active Active
-
2019
- 2019-04-29 US US17/057,981 patent/US11926920B2/en active Active
- 2019-04-29 KR KR1020207036609A patent/KR20210011983A/ko not_active Application Discontinuation
- 2019-04-29 WO PCT/CN2019/084880 patent/WO2019223499A1/en active Application Filing
- 2019-04-29 JP JP2020565819A patent/JP7505985B2/ja active Active
- 2019-04-29 SG SG11202011564RA patent/SG11202011564RA/en unknown
- 2019-05-07 TW TW108115766A patent/TWI799577B/zh active
-
2024
- 2024-02-08 US US18/436,968 patent/US20240183051A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050109611A1 (en) * | 1998-07-10 | 2005-05-26 | Woodruff Daniel J. | Electroplating apparatus with segmented anode array |
US20050067290A1 (en) * | 2003-09-30 | 2005-03-31 | Matthias Bonkass | Method and system for automatically controlling a current distribution of a multi-anode arrangement during the plating of a metal on a substrate surface |
US20050173241A1 (en) * | 2004-02-06 | 2005-08-11 | Chalupa Radek P. | Apparatus having plating solution container with current applying anodes |
TW200837225A (en) * | 2007-03-15 | 2008-09-16 | Taiwan Semiconductor Mfg | Apparatuses for electrochemical deposition, conductive layers on semiconductor wafer, and fabrication methods thereof |
TW201634761A (zh) * | 2015-01-27 | 2016-10-01 | 應用材料股份有限公司 | 具有適用於凹槽的接觸環密封及竊流電極的電鍍設備 |
TW201718955A (zh) * | 2015-09-02 | 2017-06-01 | 應用材料股份有限公司 | 具有電流取樣電極的電鍍處理器 |
Also Published As
Publication number | Publication date |
---|---|
CN110512248A (zh) | 2019-11-29 |
JP2021525312A (ja) | 2021-09-24 |
WO2019223499A1 (en) | 2019-11-28 |
US20240183051A1 (en) | 2024-06-06 |
CN110512248B (zh) | 2022-04-12 |
JP7505985B2 (ja) | 2024-06-25 |
US20210301416A1 (en) | 2021-09-30 |
KR20210011983A (ko) | 2021-02-02 |
US11926920B2 (en) | 2024-03-12 |
SG11202011564RA (en) | 2020-12-30 |
TW202003887A (zh) | 2020-01-16 |
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