TWI798087B - Method for improving the adhesion of piezoelectric elements - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000002904 solvent Substances 0.000 claims abstract description 102
- 238000009835 boiling Methods 0.000 claims abstract description 93
- 239000002245 particle Substances 0.000 claims abstract description 29
- 238000001291 vacuum drying Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002002 slurry Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical group CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 18
- 229920001577 copolymer Polymers 0.000 claims description 14
- 239000011877 solvent mixture Substances 0.000 claims description 11
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 8
- WFLOTYSKFUPZQB-UHFFFAOYSA-N 1,2-difluoroethene Chemical group FC=CF WFLOTYSKFUPZQB-UHFFFAOYSA-N 0.000 claims description 4
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 238000001035 drying Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- 238000000935 solvent evaporation Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- AHFMSNDOYCFEPH-UHFFFAOYSA-N 1,2-difluoroethane Chemical compound FCCF AHFMSNDOYCFEPH-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
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Abstract
Description
本發明係有關於一種指紋辨識元件,尤其係指一種指紋辨識元件內壓電元件附著性的改善方法。The invention relates to a fingerprint identification element, in particular to a method for improving the adhesion of piezoelectric elements in the fingerprint identification element.
一般而言,指紋辨識元件在TFT陣列基板上的製作,通常是採用濕式鍍膜製程來完成整個元件的膜層。目前,有一種超聲波指紋辨識技術是採用超聲波傳導的訊號模式,而聲波於各介質材料的傳導速率與能量衰減常數就決定了整個指紋辨識元件的影像對比。超聲波在不均質的物質中作聲波傳導,訊號會產生吸收與反射等降低總能量的行為,故需要高規格要求整個指紋辨識膜層結構的物理型態。Generally speaking, the fabrication of the fingerprint recognition element on the TFT array substrate usually adopts a wet coating process to complete the film layer of the entire element. At present, there is an ultrasonic fingerprint identification technology that uses the signal mode of ultrasonic transmission, and the transmission rate and energy attenuation constant of sound waves in various dielectric materials determine the image contrast of the entire fingerprint identification component. Ultrasound conducts sound waves in heterogeneous substances, and the signal will produce behaviors such as absorption and reflection that reduce the total energy. Therefore, high specifications are required to identify the physical form of the entire fingerprint identification film structure.
指紋辨識元件的壓電層結構主要採用狹縫式塗佈(slot die coating)技術,透過濕式印刷製程來降低其元件成本。至於厚度的需求,則因應壓電層材料的機電轉換係數而有其基本的膜厚要求。The piezoelectric layer structure of the fingerprint identification element mainly adopts the slot die coating technology, and the component cost is reduced through the wet printing process. As for the thickness requirement, the basic film thickness requirement depends on the electromechanical conversion coefficient of the piezoelectric layer material.
接著,請參考圖1~圖2,圖1~圖2係繪示現有技術中指紋辨識元件的壓電層結構的示意圖。如圖1~圖2所示,指紋辨識元件100分別包含觸控層30、銀層20、以及壓電層10或壓電層10a,其中壓電層10或壓電層10a的材料例如是共聚物(copolymer)。當在壓電層10或壓電層10a表面上堆疊對應的導電層(例如Ag)和絕緣保護材料時,壓電層10或壓電層10a之塗層與相鄰層間的附著狀況會影響超聲波的能量傳遞。例如,圖1顯示壓電層10的內部或介面有空孔(如圓圈所示者)存在,如此會造成超聲波反射,影響訊號傳送。另外,圖2顯示壓電層10a的表面並不平整,導致本身與相鄰銀層20無法緊密接觸,亦會影響訊號傳送。Next, please refer to FIGS. 1-2 . FIGS. 1-2 are schematic diagrams illustrating the structure of the piezoelectric layer of the fingerprint recognition element in the prior art. As shown in FIGS. 1-2 , the
因此,如何提供一個能解決上述問題的裝置與方法,乃是業界所需思考的重要課題。Therefore, how to provide a device and method that can solve the above problems is an important issue that the industry needs to consider.
鑒於上述內容,本揭露之一態樣係提供一種壓電元件附著性的改善方法,包含:將溶質粒子、一低沸點溶劑以及一高沸點溶劑充分混合,以形成一漿料,其中該溶質粒子為壓電材料;將該漿料塗佈於一基板上,形成一濕膜;在不同真空度下對該濕膜進行一真空乾燥步驟,以減少該濕膜的厚度;對該濕膜進行一第一烘烤步驟,將該濕膜的表面定型;以及對該濕膜進行一第二烘烤步驟,使該濕膜固化而形成一壓電元件。In view of the above, an aspect of the present disclosure provides a method for improving the adhesion of piezoelectric elements, comprising: fully mixing solute particles, a low-boiling point solvent, and a high-boiling point solvent to form a slurry, wherein the solute particles It is a piezoelectric material; the slurry is coated on a substrate to form a wet film; the wet film is subjected to a vacuum drying step under different vacuum degrees to reduce the thickness of the wet film; the wet film is subjected to a The first baking step is to shape the surface of the wet film; and the second baking step is performed on the wet film to solidify the wet film to form a piezoelectric element.
根據本揭露之一個或多個實施方式,其中該高沸點溶劑為具有高溶解度的材料。According to one or more embodiments of the present disclosure, the high boiling point solvent is a material with high solubility.
根據本揭露之一個或多個實施方式,其中該溶質粒子為二氟乙烯及三氟乙烯共聚物。According to one or more embodiments of the present disclosure, the solute particle is a copolymer of difluoroethylene and trifluoroethylene.
根據本揭露之一個或多個實施方式,其中該低沸點溶劑與該高沸點溶劑之間彼此是獨立系統,皆不與該溶質粒子發生化學反應。According to one or more embodiments of the present disclosure, the low-boiling solvent and the high-boiling solvent are independent systems, neither of which chemically reacts with the solute particles.
根據本揭露之一個或多個實施方式,其中該低沸點溶劑與該高沸點溶劑具有不同蒸氣壓。According to one or more embodiments of the present disclosure, wherein the low boiling point solvent and the high boiling point solvent have different vapor pressures.
根據本揭露之一個或多個實施方式,其中該漿料更包含其他具有不同蒸氣壓的溶劑。According to one or more embodiments of the present disclosure, the slurry further includes other solvents with different vapor pressures.
根據本揭露之一個或多個實施方式,其中該低沸點溶劑的沸點小於100℃,而該高沸點溶劑的沸點大於140℃。According to one or more embodiments of the present disclosure, wherein the boiling point of the low boiling point solvent is less than 100°C, and the boiling point of the high boiling point solvent is greater than 140°C.
根據本揭露之一個或多個實施方式,其中該低沸點溶劑為丁酮(MEK),而該高沸點溶劑為二甲基乙醯胺(DMAC)。According to one or more embodiments of the present disclosure, wherein the low boiling point solvent is methyl ethyl ketone (MEK), and the high boiling point solvent is dimethylacetamide (DMAC).
根據本揭露之一個或多個實施方式,其中該溶質粒子的重量百分比介於8~35wt%,而該低沸點溶劑與該高沸點溶劑之重量百分比的和介於65~92wt%。According to one or more embodiments of the present disclosure, the weight percentage of the solute particles is 8-35 wt%, and the sum of the weight percentages of the low boiling point solvent and the high boiling point solvent is 65-92 wt%.
根據本揭露之一個或多個實施方式,其中在該低沸點溶劑與該高沸點溶劑所組成之一溶劑混合物中,該低沸點溶劑的重量百分比介於37~46wt%,而該高沸點溶劑的重量百分比介於63~54wt%。According to one or more embodiments of the present disclosure, in a solvent mixture composed of the low boiling point solvent and the high boiling point solvent, the weight percentage of the low boiling point solvent is 37-46wt%, and the high boiling point solvent The weight percentage is between 63~54wt%.
總結來說,本發明實施例透過一種高沸點的溶劑添加,讓對應漿料內其他的低沸點溶劑能降低壓電分子乾燥化的速率,在氣液平衡的過程使低沸點的體積會因為高沸點分子的存在而有所被制約,縮小溶劑系統體積的變化率,透過分子揮發的連續穩定改變,使乾燥後的整體結構更連續,用以改善指紋辨識元件的表面粗糙度。To sum up, the embodiment of the present invention adds a solvent with a high boiling point, so that other low boiling point solvents in the corresponding slurry can reduce the drying rate of the piezoelectric molecules, and the volume of the low boiling point will be reduced due to the high The existence of boiling point molecules is restricted to reduce the volume change rate of the solvent system, and through the continuous and stable change of molecular volatilization, the overall structure after drying is more continuous, which is used to improve the surface roughness of fingerprint recognition components.
為便貴審查委員能對本發明之目的、形狀、構造裝置特徵及其功效,做更進一步之認識與瞭解,茲舉實施例配合圖式,詳細說明如下。In order to facilitate your review committee to further understand and understand the purpose, shape, structure, device features and effects of the present invention, the following examples are given in conjunction with the drawings, and the detailed description is as follows.
以下揭露提供不同的實施例或示例,以建置所提供之標的物的不同特徵。以下敘述之成分以及排列方式的特定示例是為了簡化本公開,目的不在於構成限制;元件的尺寸和形狀亦不被揭露之範圍或數值所限制,但可以取決於元件之製程條件或所需的特性。例如,利用剖面圖描述本發明的技術特徵,這些剖面圖是理想化的實施例示意圖。因而,由於製造工藝和/公差而導致圖示之形狀不同是可以預見的,不應為此而限定。The following disclosure provides different embodiments or examples to implement different features of the provided subject matter. The specific examples of the components and arrangements described below are for the purpose of simplifying the present disclosure, and are not intended to be limiting; the size and shape of the elements are not limited by the disclosed range or numerical values, but may depend on the process conditions or required requirements of the elements. characteristic. For example, the technical features of the present invention are described using sectional views, which are schematic diagrams of idealized embodiments. Thus, variations in the shapes shown as a result of manufacturing processes and/or tolerances are foreseeable and should not be limiting.
再者,空間相對性用語,例如「下方」、「在…之下」、「低於」、「在…之上」以及「高於」等,是為了易於描述圖式中所繪示的元素或特徵之間的關係;此外,空間相對用語除了圖示中所描繪的方向,還包含元件在使用或操作時的不同方向。Furthermore, spatial relative terms such as "below", "below", "below", "above" and "above" are for ease of description of the elements depicted in the drawings or the relationship between features; moreover, spatially relative terms encompass different orientations of elements in use or operation in addition to the orientation depicted in the illustrations.
首先要說明的是,針對已熱處理固化後的共聚物(copolymer)(例如圖1或圖2的壓電層10或壓電層10a),利用電漿進行此聚合物的表面處理可以改善微結構。也就是說,隨著電漿的加入會降低共聚物表面的粗糙度,使得水接觸角(water contact angle, WCA)變小,讓鋪在共聚物表面上的材料能更好的附著於其上,材料分子間的作用力能彼此更靠近,發揮出凡德瓦力以達到足夠的鍵結強度。若是共聚物表面很粗糙,銀(Ag)原子能接觸到共聚物的有效面積就會變少,造成銀層(Ag layer)(例如圖1或圖2的銀層20)容易產生脫落(peeling)的問題。First of all, it should be noted that, for the copolymer (copolymer) (such as the
因此,本發明之實施例提出一種壓電元件附著性的改善方法,解決上述問題。以下,搭配圖式說明本案之實施例的壓電元件附著性的改善方法。Therefore, embodiments of the present invention provide a method for improving the adhesion of piezoelectric elements to solve the above problems. Hereinafter, the method for improving the adhesion of the piezoelectric element according to the embodiment of the present application will be described with reference to the drawings.
首先,請參考圖3,圖3係繪示本發明一實施例之壓電元件附著性改善方法的示意圖。如圖3所示,在本發明一實施例之壓電元件附著性改善方法中,會先將溶質粒子120以及一溶劑混合物130充分混合,亦即使溶質粒子120均勻溶解於溶劑混合物130中,以形成一漿料;其中,溶質粒子120為壓電材料,例如是二氟乙烯及三氟乙烯共聚物。在本發明之實施例中,溶劑混合物130乃由一低沸點溶劑以及一高沸點溶劑均勻混合而成。另外,所述高沸點溶劑為具有高溶解度的材料。所述低沸點溶劑與所述高沸點溶劑之間彼此是獨立系統,皆不與溶質粒子120發生化學反應。所述低沸點溶劑與所述高沸點溶劑具有不同蒸氣壓。First, please refer to FIG. 3 . FIG. 3 is a schematic diagram illustrating a method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention. As shown in FIG. 3 , in the method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention, the
接著,如圖3所示,將溶質粒子120與溶劑混合物130充分混合而成的漿料塗佈於一基板(圖未顯示)上,形成一濕膜110。然後,可以利用一真空幫浦(圖未顯示),在不同真空度(或稱真空值)下對濕膜110進行一真空乾燥步驟,使得濕膜110內溶劑大量揮發以減少濕膜110的厚度。在此要特別說明的是,圖中濕膜110’在真空乾燥步驟中,厚度處於不斷變化的過程。例如,在真空乾燥步驟中,溶劑的揮發率受到沸點的影響,隨著真空值的增加,溶劑很容易在低溫就到達蒸氣壓而揮發,因此濕膜110內部分的低沸點溶劑與高沸點溶劑逸散後,成為厚度較薄的濕膜110’。也就是說,濕膜110整體膜層厚度會大量下降,乃是因為溶劑的飽和蒸氣壓造成溶劑大量的被幫浦溢散掉,剩下的濕膜110’具有較高密度的溶質粒子120分佈。Next, as shown in FIG. 3 , the slurry obtained by fully mixing the
另外,如圖3所示,溶劑的揮發率會受到沸點的影響,隨著真空值的增加,溶劑很容易在低溫就到達蒸氣壓而揮發。溶劑脫離溶質粒子120的速率會影響真空乾燥的表面粗糙度,如果快速乾燥(fast dry)的話會造成濕膜110’表面具有明顯粗糙的起伏特性,也就是溶質粒子120外露於濕膜110’表面,導致濕膜110’表面有明顯粗糙的起伏,會形成較大的水接觸角,後續需要靠大氣常壓式電漿來修復表面。為了避免這樣的問題,本發明之實施例乃在指紋辨識元件的壓電塗層(即本文所稱「壓電元件」)透過改變溶劑的種類與數量,來降低乾燥過程壓電粒子(即本文所稱「溶質粒子120」)所形成的表面粗糙度。透過此物理特性來提升成膜後的表面結構,改善層與層間的附著狀況,降低超聲波傳導的介面損失。In addition, as shown in Figure 3, the volatilization rate of the solvent will be affected by the boiling point. With the increase of the vacuum value, the solvent can easily reach the vapor pressure at low temperature and volatilize. The speed at which the solvent leaves the
進一步而言,本案之發明人發現在相同單位體積下,溶質粒子均勻散佈在溶液系統所形成的濕膜層內,在乾燥化的過程中隨著真空度的提升而溶劑分子會逐步溢散脫離跑至濕膜層外。真空系統的建立有其速率的限制,一開始脫離是大量的溶劑分子在參與脫附過程,逐漸趨於飽和穩定。此過程代表真空乾燥的過程不是一個等速率持續移動的過程,對於溶質分子而言會有追趕不上排列的過程,造成越靠藉近環境的液氣介面會產生不連續的起伏,形成高粗糙度的濕膜層表面。如果導入高沸點的溶劑可以抑制初期低沸點溶劑的快速揮發現象,降低快速乾燥(fast dry)機制在初期形成較連續的濕膜層表面用以獲取較小的水接觸角。但是只單一利用高沸點溶劑,在真空乾燥後期還是會有大量的溶劑分子揮發,前後兩個時期的逸散會有明顯的落差,故需要透過高、低沸點的兩個溶劑系統來達到均衡的氣液運動平衡。另外,伴隨著高沸點的溶劑系統代表有較重的分子量,此溶劑系統與共聚合物會產生過高的黏結特性,無法在特定的固含量要求下達到薄膜厚度需求,故需要低沸點溶劑系統來調節此濕式印刷特性。Furthermore, the inventors of this case found that under the same unit volume, the solute particles are evenly dispersed in the wet film layer formed by the solution system, and the solvent molecules will gradually overflow and detach as the vacuum degree increases during the drying process. Run out of the wet film layer. The establishment of a vacuum system has its speed limit. At the beginning of desorption, a large number of solvent molecules participate in the desorption process, and gradually tend to be saturated and stable. This process represents that the process of vacuum drying is not a process of continuous movement at a constant rate. For solute molecules, there will be a process that cannot catch up with the arrangement, resulting in discontinuous fluctuations and high roughness at the liquid-gas interface that is closer to the environment. surface of the wet film layer. If a solvent with a high boiling point is introduced, the rapid volatilization of the solvent with a low boiling point in the early stage can be suppressed, and the fast drying mechanism can be reduced to form a relatively continuous wet film surface in the early stage to obtain a smaller water contact angle. However, only using high-boiling-point solvents alone will still cause a large number of solvent molecules to volatilize in the later stage of vacuum drying, and there will be obvious differences in the dissipation between the two periods before and after, so it is necessary to use two solvent systems with high and low boiling points to achieve a balanced atmosphere. fluid balance. In addition, the solvent system with a high boiling point represents a heavy molecular weight. This solvent system and the copolymer will have excessively high bonding characteristics, and cannot meet the film thickness requirements under a specific solid content requirement, so a low boiling point solvent system is required. To adjust the wet printing characteristics.
因此,為了使濕膜110達成緩慢乾燥(fast dry)的效果,避免因快速乾燥(fast dry)導致表面粗糙的缺陷,發明人進一步提出其他實施例並說明如下。Therefore, in order to make the
在本發明其他實施例中,溶質粒子120採用二氟乙烯及三氟乙烯共聚物;低沸點溶劑採用沸點80℃的丁酮(MEK);高沸點溶劑採用沸點166℃的二甲基乙醯胺(DMAC)。當溶質粒子120的重量百分比為X wt%;低沸點溶劑的重量百分比為Y wt% ;高沸點溶劑的重量百分比為Z wt%時,X+Y+Z=100%且X介於8~35wt%,而(Y+Z)介於65~92wt%。另外,Y的佔比若高於Z則系統揮發速率會過快;反之,Z的佔比若高於Y則系統揮發速率會過慢,所以在低沸點溶劑與高沸點溶劑所組成之溶劑混合物130中,低沸點溶劑的重量百分比介於37~46wt%,而高沸點溶劑的重量百分比介於63~54wt%(參考圖4),相對於溶質粒子120 (二氟乙烯及三氟乙烯共聚物)能形成較低粗糙度的表面結構。In other embodiments of the present invention, the
在其他實施例中,高、低沸點溶劑也可以是不同配比,且沸點越高的溶劑佔比越高會呈現較穩定的揮發效果。此可參考圖4,圖4係繪示本發明一實施例之真空乾燥時溶劑揮發率的示意圖,說明真空乾燥時溶劑揮發率,其中曲線I代表高沸點溶劑;曲線II代表低沸點溶劑;曲線III代表混合後溶劑。由圖4可知,相較於僅有高或低沸點溶劑的情況,混合後溶劑具有較穩定的揮發率,能形成較低粗糙度的表面結構。另外,圖5係繪示本發明另一實施例之真空乾燥時溶劑揮發率的示意圖。在圖5之實施例中,曲線IV代表高沸點溶劑;曲線V代表低沸點溶劑;曲線VI代表混合後溶劑;在低沸點溶劑與高沸點溶劑所組成之溶劑混合物130中,Y的佔比為55~67wt%,而Z的佔比為45~33wt%。由圖5亦可知,相較於僅有高或低沸點溶劑的情況,混合後溶劑具有較穩定的揮發率,能形成較低粗糙度的表面結構。另外,圖6係繪示本發明又一實施例之真空乾燥時溶劑揮發率的示意圖。低沸點溶劑採用沸點135℃的乙二醇單乙醚;高沸點溶劑採用沸點166℃的二甲基乙醯胺(DMAC)。在圖6之實施例中,曲線VII代表高沸點溶劑;曲線VIII代表低沸點溶劑;曲線VIIII代表混合後溶劑;在低沸點溶劑與高沸點溶劑所組成之溶劑混合物130中,Y的佔比為15~85wt%,而Z的佔比為85~15wt%。由圖6亦可知,發現揮發速率在不同配比條件差異不大,所形成的表面結構粗糙度變化不顯著。In other embodiments, the high and low boiling point solvents may also be in different proportions, and the higher the proportion of the solvent with the higher boiling point, the more stable the volatilization effect will be. This can refer to Fig. 4, and Fig. 4 is the schematic diagram of solvent volatilization rate when drawing the vacuum drying of an embodiment of the present invention, solvent volatilization rate when illustrating vacuum drying, wherein curve I represents high boiling point solvent; Curve II represents low boiling point solvent; III represents the mixed solvent. It can be seen from Figure 4 that compared with the case of only high or low boiling point solvents, the mixed solvent has a more stable volatilization rate and can form a surface structure with lower roughness. In addition, FIG. 5 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to another embodiment of the present invention. In the embodiment of FIG. 5 , curve IV represents a high boiling point solvent; curve V represents a low boiling point solvent; curve VI represents a mixed solvent; in the
另外,溶質粒子120與所述高、低沸點溶劑等極性溶劑的氫鍵產生狀況也是決定三者配比的影響因子。In addition, the generation of hydrogen bonds between the
接著,請再參考圖3,經過真空乾燥後,後續對濕膜110’進行一第一烘烤步驟,將濕膜110’的表面定型而形成濕膜110”。最後,對濕膜110”進行一第二烘烤步驟,使濕膜”固化而形成一壓電元件110”’。在此須說明的是本實施例所稱的烘烤步驟,包括軟烤和硬烤,在其他可行的方案中,也可以採用多階段的烘烤程序等,其中,在軟烤的步驟中,主要用於將材料或濕膜預成型,例如提供70゚C ~80゚C 的環境中烘烤40~60分鐘,在硬烤的步驟中,主要用於將材料或濕膜固化或者將預成型的,例如提供130゚C~150゚C 的環境中烘烤3小時~5小時,在任何可以據以實施的方案中,熟習本技術領域人士可以進行均等的修改或調整,在此本發明並不加以侷限。Then, please refer to Fig. 3 again, after vacuum drying, the wet film 110' is subsequently subjected to a first baking step to shape the surface of the wet film 110' to form a
另外,在其他實施例中,所述漿料更包含其他具有不同蒸氣壓的溶劑。In addition, in other embodiments, the slurry further includes other solvents with different vapor pressures.
另外,在其他實施例中,所述低沸點溶劑的沸點小於100℃,而所述高沸點溶劑的沸點大於140℃。Additionally, in other embodiments, the boiling point of the low boiling point solvent is less than 100°C, and the boiling point of the high boiling point solvent is greater than 140°C.
綜上所述,本發明之實施例透過一種高沸點的溶劑添加,讓對應漿料內其他的低沸點溶劑能降低壓電分子乾燥化的速率,在氣液平衡的過程使低沸點的體積會因為高沸點分子的存在而有所被制約,縮小溶劑系統體積的變化率,透過分子揮發的連續穩定改變,使乾燥後的整體結構更連續,用以改善指紋辨識元件的表面粗糙度。To sum up, the embodiments of the present invention add a solvent with a high boiling point, so that other low-boiling point solvents in the corresponding slurry can reduce the drying rate of piezoelectric molecules, and the volume of the low-boiling point will be reduced during the process of gas-liquid equilibrium. Due to the existence of high boiling point molecules, it is restricted to reduce the volume change rate of the solvent system, and through the continuous and stable change of molecular volatilization, the overall structure after drying is more continuous, which is used to improve the surface roughness of fingerprint recognition components.
以上實施方式僅用以說明本發明的技術方案而非限制,儘管參照較佳實施方式對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換,而不脫離本發明技術方案的精神和範圍。The above embodiments are only used to illustrate the technical solutions of the present invention without limitation. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced. Without departing from the spirit and scope of the technical solution of the present invention.
10、10a:壓電層
20:銀層
30:觸控層
100:指紋辨識元件
110、110’、110”:濕膜
110”’:壓電元件
120:溶質粒子
130:溶劑混合物
I~VIII:曲線
10, 10a: Piezoelectric layer
20: silver layer
30: Touch layer
100:
為讓本發明的上述與其他目的、特徵、優點與實施例能更淺顯易懂,所附圖式之說明如下: 圖1~圖2係繪示現有技術中指紋辨識元件的壓電層結構的示意圖。 圖3係繪示本發明一實施例之壓電元件附著性改善方法的示意圖。 圖4係繪示本發明一實施例之真空乾燥時溶劑揮發率的示意圖。 圖5係繪示本發明另一實施例之真空乾燥時溶劑揮發率的示意圖。 圖6係繪示本發明又一實施例之真空乾燥時溶劑揮發率的示意圖。 In order to make the above and other objects, features, advantages and embodiments of the present invention more understandable, the accompanying drawings are described as follows: 1 to 2 are schematic diagrams illustrating the piezoelectric layer structure of the fingerprint recognition element in the prior art. FIG. 3 is a schematic diagram illustrating a method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention. FIG. 4 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to an embodiment of the present invention. FIG. 5 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to another embodiment of the present invention. FIG. 6 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to another embodiment of the present invention.
根據慣常的作業方式,圖中各種特徵與元件並未依實際比例繪製,其繪製方式是為了以最佳的方式呈現與本發明相關的具體特徵與元件。此外,在不同圖式間,以相同或相似的元件符號指稱相似的元件及部件。In accordance with common practice, the various features and elements in the drawings are not drawn to scale, but are drawn in order to best represent the specific features and elements relevant to the invention. In addition, the same or similar reference symbols refer to similar elements and parts in different drawings.
110、110’、110”:濕膜 110, 110’, 110”: wet film
110''':壓電元件 110''': piezoelectric element
120:溶質粒子 120: solute particles
130:溶劑混合物 130: solvent mixture
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