CN114883476A - Method for improving adhesion of piezoelectric element - Google Patents
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- 229920001577 copolymer Polymers 0.000 claims description 11
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- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 4
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 2
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- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
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- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
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Abstract
Description
技术领域technical field
本发明是有关于一种指纹辨识元件,尤其是指一种指纹辨识元件内压电元件附着性的改善方法。The present invention relates to a fingerprint identification element, in particular to a method for improving the adhesion of piezoelectric elements in the fingerprint identification element.
背景技术Background technique
一般而言,指纹辨识元件在TFT阵列基板上的制作,通常是采用湿式镀膜制程来完成整个元件的膜层。目前,有一种超声波指纹辨识技术是采用超声波传导的讯号模式,而声波于各介质材料的传导速率与能量衰减常数就决定了整个指纹辨识元件的影像对比。超声波在不均质的物质中作声波传导,讯号会产生吸收与反射等降低总能量的行为,故需要高规格要求整个指纹辨识膜层结构的物理型态。Generally speaking, the fabrication of the fingerprint identification element on the TFT array substrate usually adopts a wet coating process to complete the film layer of the entire element. At present, there is an ultrasonic fingerprint identification technology that adopts the signal mode of ultrasonic conduction, and the transmission rate and energy attenuation constant of the sound wave in each medium material determine the image comparison of the entire fingerprint identification element. Ultrasonic waves conduct sound waves in inhomogeneous materials, and the signals will absorb and reflect to reduce the total energy. Therefore, high specifications are required to require the physical form of the entire fingerprint identification film structure.
指纹辨识元件的压电层结构主要采用狭缝式涂布(slot die coating)技术,透过湿式印刷制程来降低其元件成本。至于厚度的需求,则因应压电层材料的机电转换系数而有其基本的膜厚要求。The piezoelectric layer structure of the fingerprint identification device mainly adopts the slot die coating technology, and the cost of the device is reduced through the wet printing process. As for the thickness requirements, there are basic film thickness requirements according to the electromechanical conversion coefficient of the piezoelectric layer material.
接着,请参考图1~图2,图1~图2绘示现有技术中指纹辨识元件的压电层结构的示意图。如图1~图2所示,指纹辨识元件100分别包含触控层30、银层20、以及压电层10或压电层10a,其中压电层10或压电层10a的材料例如是共聚物(copolymer)。当在压电层10或压电层10a表面上堆迭对应的导电层(例如Ag)和绝缘保护材料时,压电层10或压电层10a之涂层与相邻层间的附着状况会影响超声波的能量传递。例如,图1显示压电层10的内部或介面有空孔(如圆圈所示者)存在,如此会造成超声波反射,影响讯号传送。另外,图2显示压电层10a的表面并不平整,导致本身与相邻银层20无法紧密接触,亦会影响讯号传送。Next, please refer to FIGS. 1 to 2 . FIGS. 1 to 2 are schematic diagrams illustrating the piezoelectric layer structure of the fingerprint identification element in the prior art. As shown in FIG. 1 to FIG. 2 , the
因此,如何提供一个能解决上述问题的装置与方法,乃是业界所需思考的重要课题。Therefore, how to provide a device and method that can solve the above problems is an important issue that the industry needs to think about.
发明内容SUMMARY OF THE INVENTION
鉴于上述内容,本揭露之一态样系提供一种压电元件附着性的改善方法,包含:将溶质粒子、一低沸点溶剂以及一高沸点溶剂充分混合,以形成一浆料,其中该溶质粒子为压电材料;将该浆料涂布于一基板上,形成一湿膜;在不同真空度下对该湿膜进行一真空干燥步骤,以减少该湿膜的厚度;对该湿膜进行一第一烘烤步骤,将该湿膜的表面定型;以及对该湿膜进行一第二烘烤步骤,使该湿膜固化而形成一压电元件。In view of the above, one aspect of the present disclosure provides a method for improving the adhesion of piezoelectric elements, comprising: fully mixing solute particles, a low-boiling point solvent and a high-boiling point solvent to form a slurry, wherein the solute The particles are piezoelectric materials; the slurry is coated on a substrate to form a wet film; a vacuum drying step is performed on the wet film under different vacuum degrees to reduce the thickness of the wet film; A first baking step is performed to shape the surface of the wet film; and a second baking step is performed on the wet film to solidify the wet film to form a piezoelectric element.
根据本揭露之一个或多个实施方式,其中该高沸点溶剂为具有高溶解度的材料。According to one or more embodiments of the present disclosure, the high boiling point solvent is a material with high solubility.
根据本揭露之一个或多个实施方式,其中该溶质粒子为二氟乙烯及三氟乙烯共聚物。According to one or more embodiments of the present disclosure, the solute particles are copolymers of vinylidene fluoride and trifluoroethylene.
根据本揭露之一个或多个实施方式,其中该低沸点溶剂与该高沸点溶剂之间彼此是独立系统,皆不与该溶质粒子发生化学反应。According to one or more embodiments of the present disclosure, the low-boiling point solvent and the high-boiling point solvent are independent systems with each other, and neither chemically reacts with the solute particles.
根据本揭露之一个或多个实施方式,其中该低沸点溶剂与该高沸点溶剂具有不同蒸气压。According to one or more embodiments of the present disclosure, the low boiling point solvent and the high boiling point solvent have different vapor pressures.
根据本揭露之一个或多个实施方式,其中该浆料更包含其他具有不同蒸气压的溶剂。According to one or more embodiments of the present disclosure, the slurry further comprises other solvents having different vapor pressures.
根据本揭露之一个或多个实施方式,其中该低沸点溶剂的沸点小于100℃,而该高沸点溶剂的沸点大于140℃。According to one or more embodiments of the present disclosure, the boiling point of the low boiling point solvent is less than 100°C, and the boiling point of the high boiling point solvent is greater than 140°C.
根据本揭露之一个或多个实施方式,其中该低沸点溶剂为丁酮(MEK),而该高沸点溶剂为二甲基乙酰胺(DMAC)。According to one or more embodiments of the present disclosure, the low boiling point solvent is methyl ethyl ketone (MEK), and the high boiling point solvent is dimethylacetamide (DMAC).
根据本揭露之一个或多个实施方式,其中该溶质粒子的重量百分比介于8~35wt%,而该低沸点溶剂与该高沸点溶剂之重量百分比的和介于65~92wt%。According to one or more embodiments of the present disclosure, the weight percent of the solute particles ranges from 8 to 35 wt %, and the sum of the weight percent of the low boiling point solvent and the high boiling point solvent ranges from 65 to 92 wt %.
根据本揭露之一个或多个实施方式,其中在该低沸点溶剂与该高沸点溶剂所组成之一溶剂混合物中,该低沸点溶剂的重量百分比介于37~46wt%,而该高沸点溶剂的重量百分比介于63~54wt%。According to one or more embodiments of the present disclosure, in a solvent mixture composed of the low-boiling point solvent and the high-boiling-point solvent, the weight percent of the low-boiling-point solvent is 37-46 wt %, and the high-boiling-point solvent has a weight percentage of 37-46 wt %. The weight percentage is between 63 and 54 wt %.
总结来说,本发明实施例透过一种高沸点的溶剂添加,让对应浆料内其他的低沸点溶剂能降低压电分子干燥化的速率,在气液平衡的过程使低沸点的体积会因为高沸点分子的存在而有所被制约,缩小溶剂系统体积的变化率,透过分子挥发的连续稳定改变,使干燥后的整体结构更连续,用以改善指纹辨识元件的表面粗糙度。To sum up, in the embodiment of the present invention, by adding a solvent with a high boiling point, other low boiling point solvents in the corresponding slurry can reduce the drying rate of piezoelectric molecules, and in the process of gas-liquid equilibrium, the volume of low boiling point will be reduced. Restricted by the existence of high boiling point molecules, the change rate of the solvent system volume is reduced, and the continuous and stable change of molecular volatilization makes the dried overall structure more continuous to improve the surface roughness of the fingerprint identification element.
附图说明Description of drawings
为让本发明的上述与其他目的、特征、优点与实施例能更浅显易懂,所附图式之说明如下:In order to make the above-mentioned and other objects, features, advantages and embodiments of the present invention more easily understood, the descriptions of the accompanying drawings are as follows:
图1~图2绘示现有技术中指纹辨识元件的压电层结构的示意图。1 to 2 are schematic diagrams illustrating the piezoelectric layer structure of the fingerprint identification element in the prior art.
图3绘示本发明一实施例之压电元件附着性改善方法的示意图。FIG. 3 is a schematic diagram illustrating a method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention.
图4绘示本发明一实施例之真空干燥时溶剂挥发率的示意图。FIG. 4 is a schematic diagram illustrating the solvent volatilization rate during vacuum drying according to an embodiment of the present invention.
图5绘示本发明另一实施例之真空干燥时溶剂挥发率的示意图。FIG. 5 is a schematic diagram illustrating the solvent volatilization rate during vacuum drying according to another embodiment of the present invention.
图6绘示本发明又一实施例之真空干燥时溶剂挥发率的示意图。FIG. 6 is a schematic diagram illustrating the solvent volatilization rate during vacuum drying according to another embodiment of the present invention.
根据惯常的作业方式,图中各种特征与元件并未依实际比例绘制,其绘制方式是为了以最佳的方式呈现与本发明相关的具体特征与元件。此外,在不同图式间,以相同或相似的元件符号指称相似的元件及部件。In accordance with common practice, the various features and elements in the drawings are not drawn to scale, but are drawn in order to best represent specific features and elements relevant to the present invention. Furthermore, the same or similar reference numerals are used to refer to similar elements and parts among the different figures.
附图标记:Reference number:
10、10a:压电层10, 10a: Piezoelectric layer
20:银层20: Silver Layer
30:触控层30: touch layer
100:指纹辨识元件100: Fingerprint recognition element
110、110’、110”:湿膜110, 110’, 110”: wet film
110”’:压电元件110"': Piezoelectric element
120:溶质粒子120: Solute Particles
130:溶剂混合物130: Solvent mixture
I~VIII:曲线I to VIII: Curves
具体实施方式Detailed ways
为便贵审查委员能对本发明之目的、形状、构造装置特征及其功效,做更进一步之认识与了解,兹举实施例配合图式,详细说明如下。In order to facilitate your reviewers to have a further understanding and understanding of the purpose, shape, structure and device features of the present invention and their effects, the following examples are given in conjunction with the drawings.
以下揭露提供不同的实施例或示例,以建置所提供之标的物的不同特征。以下叙述之成分以及排列方式的特定示例是为了简化本公开,目的不在于构成限制;元件的尺寸和形状亦不被揭露之范围或数值所限制,但可以取决于元件之制程条件或所需的特性。例如,利用剖面图描述本发明的技术特征,这些剖面图是理想化的实施例示意图。因而,由于制造工艺和/公差而导致图示之形状不同是可以预见的,不应为此而限定。The following disclosure provides different embodiments or examples for implementing different features of the provided subject matter. The specific examples of components and arrangements described below are for the purpose of simplifying the present disclosure and are not intended to be limiting; the size and shape of the components are not limited by the disclosed ranges or values, but may depend on the processing conditions of the components or the desired characteristic. For example, technical features of the invention are described using cross-sectional illustrations that are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations due to manufacturing processes and/or tolerances are foreseeable and should not be limited thereto.
再者,空间相对性用语,例如「下方」、「在…之下」、「低于」、「在…之上」以及「高于」等,是为了易于描述图式中所绘示的元素或特征之间的关系;此外,空间相对用语除了图示中所描绘的方向,还包含元件在使用或操作时的不同方向。Furthermore, spatially relative terms such as "below", "below", "below", "above" and "above" are used to facilitate the description of the elements depicted in the drawings or relationship between features; further, spatially relative terms encompass different orientations of elements in use or operation in addition to the orientation depicted in the illustrations.
首先要说明的是,针对已热处理固化后的共聚物(copolymer)(例如图1或图2的压电层10或压电层10a),利用电浆进行此聚合物的表面处理可以改善微结构。也就是说,随着电浆的加入会降低共聚物表面的粗糙度,使得水接触角(water contact angle,WCA)变小,让铺在共聚物表面上的材料能更好的附着于其上,材料分子间的作用力能彼此更靠近,发挥出凡德瓦力以达到足够的键结强度。若是共聚物表面很粗糙,银(Ag)原子能接触到共聚物的有效面积就会变少,造成银层(Ag layer)(例如图1或图2的银层20)容易产生脱落(peeling)的问题。First of all, it should be noted that for a copolymer that has been cured by heat treatment (such as the
因此,本发明之实施例提出一种压电元件附着性的改善方法,解决上述问题。以下,搭配图式说明本案之实施例的压电元件附着性的改善方法。Therefore, the embodiments of the present invention provide a method for improving the adhesion of piezoelectric elements to solve the above problems. Hereinafter, the method for improving the adhesion of the piezoelectric element according to the embodiment of the present application will be described with reference to the drawings.
首先,请参考图3,图3绘示本发明一实施例之压电元件附着性改善方法的示意图。如图3所示,在本发明一实施例之压电元件附着性改善方法中,会先将溶质粒子120以及一溶剂混合物130充分混合,亦即使溶质粒子120均匀溶解于溶剂混合物130中,以形成一浆料;其中,溶质粒子120为压电材料,例如是二氟乙烯及三氟乙烯共聚物。在本发明之实施例中,溶剂混合物130乃由一低沸点溶剂以及一高沸点溶剂均匀混合而成。另外,所述高沸点溶剂为具有高溶解度的材料。所述低沸点溶剂与所述高沸点溶剂之间彼此是独立系统,皆不与溶质粒子120发生化学反应。所述低沸点溶剂与所述高沸点溶剂具有不同蒸气压。First, please refer to FIG. 3 , which is a schematic diagram illustrating a method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention. As shown in FIG. 3 , in the method for improving the adhesion of piezoelectric elements according to an embodiment of the present invention, the
接着,如图3所示,将溶质粒子120与溶剂混合物130充分混合而成的浆料涂布于一基板(图未显示)上,形成一湿膜110。然后,可以利用一真空帮浦(图未显示),在不同真空度(或称真空值)下对湿膜110进行一真空干燥步骤,使得湿膜110内溶剂大量挥发以减少湿膜110的厚度。在此要特别说明的是,图中湿膜110’在真空干燥步骤中,厚度处于不断变化的过程。例如,在真空干燥步骤中,溶剂的挥发率受到沸点的影响,随着真空值的增加,溶剂很容易在低温就到达蒸气压而挥发,因此湿膜110内部分的低沸点溶剂与高沸点溶剂逸散后,成为厚度较薄的湿膜110’。也就是说,湿膜110整体膜层厚度会大量下降,乃是因为溶剂的饱和蒸气压造成溶剂大量的被帮浦溢散掉,剩下的湿膜110’具有较高密度的溶质粒子120分布。Next, as shown in FIG. 3 , a slurry obtained by fully mixing the
另外,如图3所示,溶剂的挥发率会受到沸点的影响,随着真空值的增加,溶剂很容易在低温就到达蒸气压而挥发。溶剂脱离溶质粒子120的速率会影响真空干燥的表面粗糙度,如果快速干燥(fast dry)的话会造成湿膜110’表面具有明显粗糙的起伏特性,也就是溶质粒子120外露于湿膜110’表面,导致湿膜110’表面有明显粗糙的起伏,会形成较大的水接触角,后续需要靠大气常压式电浆来修复表面。为了避免这样的问题,本发明之实施例乃在指纹辨识元件的压电涂层(即本文所称「压电元件」)透过改变溶剂的种类与数量,来降低干燥过程压电粒子(即本文所称「溶质粒子120」)所形成的表面粗糙度。透过此物理特性来提升成膜后的表面结构,改善层与层间的附着状况,降低超声波传导的介面损失。In addition, as shown in Figure 3, the volatilization rate of the solvent will be affected by the boiling point. With the increase of the vacuum value, the solvent can easily reach the vapor pressure at low temperature and volatilize. The rate at which the solvent detaches from the
进一步而言,本案之发明人发现在相同单位体积下,溶质粒子均匀散布在溶液系统所形成的湿膜层内,在干燥化的过程中随着真空度的提升而溶剂分子会逐步溢散脱离跑至湿膜层外。真空系统的建立有其速率的限制,一开始脱离是大量的溶剂分子在参与脱附过程,逐渐趋于饱和稳定。此过程代表真空干燥的过程不是一个等速率持续移动的过程,对于溶质分子而言会有追赶不上排列的过程,造成越靠藉近环境的液气介面会产生不连续的起伏,形成高粗糙度的湿膜层表面。如果导入高沸点的溶剂可以抑制初期低沸点溶剂的快速挥发现象,降低快速干燥(fast dry)机制在初期形成较连续的湿膜层表面用以获取较小的水接触角。但是只单一利用高沸点溶剂,在真空干燥后期还是会有大量的溶剂分子挥发,前后两个时期的逸散会有明显的落差,故需要透过高、低沸点的两个溶剂系统来达到均衡的气液运动平衡。另外,伴随着高沸点的溶剂系统代表有较重的分子量,此溶剂系统与共聚合物会产生过高的粘结特性,无法在特定的固含量要求下达到薄膜厚度需求,故需要低沸点溶剂系统来调节此湿式印刷特性。Further, the inventor of the present case found that under the same unit volume, the solute particles are uniformly dispersed in the wet film layer formed by the solution system, and the solvent molecules will gradually escape and escape as the vacuum degree increases during the drying process. Run to the outside of the wet film layer. The establishment of a vacuum system is limited by its rate. At the beginning, the desorption is caused by a large number of solvent molecules participating in the desorption process, which gradually tends to be saturated and stable. This process means that the process of vacuum drying is not a process of continuous movement at the same rate. For the solute molecules, there will be a process that cannot catch up with the arrangement, resulting in discontinuous fluctuations in the liquid-gas interface closer to the environment, resulting in high roughness. the surface of the wet film layer. If a solvent with a high boiling point is introduced, the rapid volatilization of the solvent with a low boiling point in the initial stage can be suppressed, and the fast dry mechanism can be reduced to form a more continuous wet film surface in the initial stage to obtain a smaller water contact angle. However, only using high-boiling point solvent alone will cause a large amount of solvent molecules to volatilize in the later stage of vacuum drying, and there will be a significant difference in the escape between the two periods. Gas-liquid movement balance. In addition, with the high boiling point solvent system representing a heavier molecular weight, the solvent system and the copolymer will have too high bonding characteristics, and cannot meet the film thickness requirements under the specific solid content requirements, so a low boiling point solvent system is required. to adjust the wet printing characteristics.
因此,为了使湿膜110达成缓慢干燥(fast dry)的效果,避免因快速干燥(fastdry)导致表面粗糙的缺陷,发明人进一步提出其他实施例并说明如下。Therefore, in order to achieve the effect of fast drying of the
在本发明其他实施例中,溶质粒子120采用二氟乙烯及三氟乙烯共聚物;低沸点溶剂采用沸点80℃的丁酮(MEK);高沸点溶剂采用沸点166℃的二甲基乙酰胺(DMAC)。当溶质粒子120的重量百分比为X wt%;低沸点溶剂的重量百分比为Y wt%;高沸点溶剂的重量百分比为Z wt%时,X+Y+Z=100%且X介于8~35wt%,而(Y+Z)介于65~92wt%。另外,Y的占比若高于Z则系统挥发速率会过快;反之,Z的占比若高于Y则系统挥发速率会过慢,所以在低沸点溶剂与高沸点溶剂所组成之溶剂混合物130中,低沸点溶剂的重量百分比介于37~46wt%,而高沸点溶剂的重量百分比介于63~54wt%(参考图4),相对于溶质粒子120(二氟乙烯及三氟乙烯共聚物)能形成较低粗糙度的表面结构。In other embodiments of the present invention, the
在其他实施例中,高、低沸点溶剂也可以是不同配比,且沸点越高的溶剂占比越高会呈现较稳定的挥发效果。此可参考图4,图4绘示本发明一实施例之真空干燥时溶剂挥发率的示意图,说明真空干燥时溶剂挥发率,其中曲线I代表高沸点溶剂;曲线II代表低沸点溶剂;曲线III代表混合后溶剂。由图4可知,相较于仅有高或低沸点溶剂的情况,混合后溶剂具有较稳定的挥发率,能形成较低粗糙度的表面结构。另外,图5绘示本发明另一实施例之真空干燥时溶剂挥发率的示意图。在图5之实施例中,曲线IV代表高沸点溶剂;曲线V代表低沸点溶剂;曲线VI代表混合后溶剂;在低沸点溶剂与高沸点溶剂所组成之溶剂混合物130中,Y的占比为55~67wt%,而Z的占比为45~33wt%。由图5亦可知,相较于仅有高或低沸点溶剂的情况,混合后溶剂具有较稳定的挥发率,能形成较低粗糙度的表面结构。另外,图6绘示本发明又一实施例之真空干燥时溶剂挥发率的示意图。低沸点溶剂采用沸点135℃的乙二醇单乙醚;高沸点溶剂采用沸点166℃的二甲基乙酰胺(DMAC)。在图6之实施例中,曲线VII代表高沸点溶剂;曲线VIII代表低沸点溶剂;曲线VIIII代表混合后溶剂;在低沸点溶剂与高沸点溶剂所组成之溶剂混合物130中,Y的占比为15~85wt%,而Z的占比为85~15wt%。由图6亦可知,发现挥发速率在不同配比条件差异不大,所形成的表面结构粗糙度变化不显著。In other embodiments, the high and low boiling point solvents may also be in different proportions, and the higher the boiling point of the solvent, the higher the proportion will show a more stable volatilization effect. This can refer to FIG. 4, which is a schematic diagram of the solvent volatilization rate during vacuum drying according to an embodiment of the present invention, illustrating the solvent volatilization rate during vacuum drying, wherein curve I represents a high boiling point solvent; curve II represents a low boiling point solvent; curve III represents the mixed solvent. It can be seen from Figure 4 that, compared with the case of only high or low boiling point solvent, the mixed solvent has a relatively stable volatilization rate and can form a surface structure with lower roughness. In addition, FIG. 5 is a schematic diagram illustrating the volatilization rate of the solvent during vacuum drying according to another embodiment of the present invention. In the embodiment of FIG. 5, curve IV represents the high boiling point solvent; curve V represents the low boiling point solvent; curve VI represents the mixed solvent; in the
另外,溶质粒子120与所述高、低沸点溶剂等极性溶剂的氢键产生状况也是决定三者配比的影响因子。In addition, the generation state of hydrogen bonds between the
接着,请再参考图3,经过真空干燥后,后续对湿膜110’进行一第一烘烤步骤,将湿膜110’的表面定型而形成湿膜110”。最后,对湿膜110”进行一第二烘烤步骤,使湿膜”固化而形成一压电元件110”’。在此须说明的是本实施例所称的烘烤步骤,包括软烤和硬烤,在其他可行的方案中,也可以采用多阶段的烘烤程序等,其中,在软烤的步骤中,主要用于将材料或湿膜预成型,例如提供70℃~80℃的环境中烘烤40~60分钟,在硬烤的步骤中,主要用于将材料或湿膜固化或者将预成型的,例如提供130℃~150℃的环境中烘烤3小时~5小时,在任何可以据以实施的方案中,熟习本技术领域人士可以进行均等的修改或调整,在此本发明并不加以局限。Next, referring to FIG. 3 again, after vacuum drying, a first baking step is subsequently performed on the
另外,在其他实施例中,所述浆料更包含其他具有不同蒸气压的溶剂。Additionally, in other embodiments, the slurry further includes other solvents with different vapor pressures.
另外,在其他实施例中,所述低沸点溶剂的沸点小于100℃,而所述高沸点溶剂的沸点大于140℃。In addition, in other embodiments, the boiling point of the low boiling point solvent is less than 100°C, and the boiling point of the high boiling point solvent is greater than 140°C.
综上所述,本发明之实施例透过一种高沸点的溶剂添加,让对应浆料内其他的低沸点溶剂能降低压电分子干燥化的速率,在气液平衡的过程使低沸点的体积会因为高沸点分子的存在而有所被制约,缩小溶剂系统体积的变化率,透过分子挥发的连续稳定改变,使干燥后的整体结构更连续,用以改善指纹辨识元件的表面粗糙度。To sum up, in the embodiment of the present invention, by adding a high boiling point solvent, other low boiling point solvents in the corresponding slurry can reduce the drying rate of piezoelectric molecules, and in the process of gas-liquid equilibrium, the low boiling point solvent can be reduced. The volume will be restricted by the existence of high boiling point molecules, reducing the rate of change of the volume of the solvent system, and through the continuous and stable change of molecular volatilization, the overall structure after drying is made more continuous, which is used to improve the surface roughness of the fingerprint identification element. .
以上实施方式仅用以说明本发明的技术方案而非限制,尽管参照较佳实施方式对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或等同替换,而不脱离本发明技术方案的精神和范围。The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced. Without departing from the spirit and scope of the technical solutions of the present invention.
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