CN114883476A - Method for improving adhesion of piezoelectric element - Google Patents
Method for improving adhesion of piezoelectric element Download PDFInfo
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- CN114883476A CN114883476A CN202210513384.1A CN202210513384A CN114883476A CN 114883476 A CN114883476 A CN 114883476A CN 202210513384 A CN202210513384 A CN 202210513384A CN 114883476 A CN114883476 A CN 114883476A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 106
- 238000009835 boiling Methods 0.000 claims abstract description 98
- 239000002245 particle Substances 0.000 claims abstract description 28
- 238000001291 vacuum drying Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002002 slurry Substances 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical group CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 17
- 229920001577 copolymer Polymers 0.000 claims description 14
- 239000011877 solvent mixture Substances 0.000 claims description 10
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 8
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 5
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000000935 solvent evaporation Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000003795 desorption Methods 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/308—Membrane type
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
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- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Ceramic Products (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
A method for improving adhesion of a piezoelectric element, comprising: fully mixing solute particles, a low boiling point solvent and a high boiling point solvent to form a slurry, wherein the solute particles are piezoelectric materials; coating the slurry on a substrate to form a wet film; carrying out a vacuum drying step on the wet film under different vacuum degrees to reduce the thickness of the wet film; carrying out soft baking on the wet film to shape the surface of the wet film; and carrying out a hard baking step on the wet film to solidify the wet film to form the piezoelectric element.
Description
Technical Field
The present invention relates to a fingerprint identification device, and more particularly, to a method for improving adhesion of a piezoelectric element in a fingerprint identification device.
Background
Generally, the fabrication of the fingerprint sensor device on the TFT array substrate usually employs a wet coating process to complete the film layer of the entire device. Currently, one ultrasonic fingerprint identification technique uses a signal mode of ultrasonic wave transmission, and the transmission rate and energy attenuation constant of sound wave in each dielectric material determine the image contrast of the whole fingerprint identification element. Ultrasonic waves are transmitted in inhomogeneous substances, and signals are absorbed and reflected to reduce the total energy, so that high specifications are required for the physical form of the whole fingerprint identification film structure.
The piezoelectric layer structure of the fingerprint identification device mainly adopts slit die coating (slit die coating) technology, and the device cost is reduced through a wet printing process. As for the thickness requirement, there is a basic film thickness requirement according to the electromechanical conversion coefficient of the piezoelectric layer material.
Next, referring to fig. 1 to 2, fig. 1 to 2 are schematic diagrams illustrating a piezoelectric layer structure of a fingerprint identification device in the prior art. As shown in fig. 1-2, the fingerprint sensor 100 includes a touch layer 30, a silver layer 20, and a piezoelectric layer 10 or 10a, wherein the piezoelectric layer 10 or 10a is made of, for example, a copolymer (copolymer). When a corresponding conductive layer (for example, Ag) and an insulating protective material are stacked on the surface of the piezoelectric layer 10 or the piezoelectric layer 10a, the adhesion condition between the coating of the piezoelectric layer 10 or the piezoelectric layer 10a and the adjacent layer affects the energy transfer of the ultrasonic wave. For example, fig. 1 shows that voids (as shown by circles) exist in the interior or interface of the piezoelectric layer 10, which can cause ultrasonic reflection and affect signal transmission. In addition, fig. 2 shows that the surface of the piezoelectric layer 10a is not flat, so that it cannot be in close contact with the adjacent silver layer 20, and the signal transmission is also affected.
Therefore, how to provide a device and a method capable of solving the above problems is an important issue to be considered in the industry.
Disclosure of Invention
In view of the foregoing, an aspect of the present disclosure provides a method for improving adhesion of a piezoelectric element, including: fully mixing solute particles, a low boiling point solvent and a high boiling point solvent to form a slurry, wherein the solute particles are piezoelectric materials; coating the slurry on a substrate to form a wet film; carrying out a vacuum drying step on the wet film under different vacuum degrees to reduce the thickness of the wet film; carrying out a first baking step on the wet film to shape the surface of the wet film; and carrying out a second baking step on the wet film to solidify the wet film so as to form the piezoelectric element.
According to one or more embodiments of the present disclosure, the high boiling point solvent is a material having high solubility.
According to one or more embodiments of the present disclosure, the solute particles are a copolymer of vinylidene fluoride and trifluoroethylene.
According to one or more embodiments of the present disclosure, the low boiling point solvent and the high boiling point solvent are independent systems from each other, and neither of them chemically reacts with the solute particles.
According to one or more embodiments of the present disclosure, the low boiling point solvent and the high boiling point solvent have different vapor pressures.
According to one or more embodiments of the present disclosure, the slurry further comprises other solvents having different vapor pressures.
According to one or more embodiments of the present disclosure, the boiling point of the low boiling point solvent is less than 100 ℃, and the boiling point of the high boiling point solvent is greater than 140 ℃.
According to one or more embodiments of the present disclosure, the low boiling point solvent is Methyl Ethyl Ketone (MEK) and the high boiling point solvent is Dimethylacetamide (DMAC).
According to one or more embodiments of the present disclosure, the weight percentage of the solute particles is between 8 and 35 wt%, and the sum of the weight percentages of the low boiling point solvent and the high boiling point solvent is between 65 and 92 wt%.
According to one or more embodiments of the present disclosure, in a solvent mixture of the low boiling point solvent and the high boiling point solvent, the weight percentage of the low boiling point solvent is between 37 and 46 wt%, and the weight percentage of the high boiling point solvent is between 63 and 54 wt%.
In summary, in the embodiment of the present invention, a solvent with a high boiling point is added, so that the drying rate of the piezoelectric molecules can be reduced by other solvents with a low boiling point in the corresponding slurry, the volume of the low boiling point is restricted due to the existence of the molecules with the high boiling point in the gas-liquid equilibrium process, the volume change rate of the solvent system is reduced, and the whole structure after drying is more continuous through the continuous and stable change of the volatilization of the molecules, so as to improve the surface roughness of the fingerprint identification element.
Drawings
In order to make the aforementioned and other objects, features, advantages and embodiments of the invention more comprehensible, the following description is given:
fig. 1-2 are schematic diagrams illustrating a piezoelectric layer structure of a fingerprint sensor in the prior art.
FIG. 3 is a schematic view of a method for improving adhesion of a piezoelectric device according to an embodiment of the invention.
FIG. 4 is a diagram illustrating the solvent evaporation rate during vacuum drying according to an embodiment of the present invention.
FIG. 5 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to another embodiment of the present invention.
FIG. 6 is a schematic diagram showing the solvent evaporation rate during vacuum drying according to another embodiment of the present invention.
In accordance with conventional practice, the various features and elements of the drawings are not necessarily to scale, emphasis instead being placed upon illustrating the particular features and elements of the invention in order to best explain the principles of the invention. Moreover, the same or similar reference numbers will be used throughout the drawings to refer to similar elements and components.
Reference numerals:
10. 10 a: piezoelectric layer
20: silver layer
30: touch layer
100: fingerprint identification element
110. 110', 110 ": wet film
110"': piezoelectric element
120: solute particles
130: solvent mixture
I to VIII: curve line
Detailed Description
For the purpose of facilitating the examination of the objects, shape, structural features and functions of the present invention, further understanding and appreciation are now provided by the following detailed description of the preferred embodiments of the invention in conjunction with the accompanying drawings.
The following disclosure provides various embodiments, or examples, for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure, but are not intended to be limiting; the size and shape of the device are not limited by the disclosed ranges or values, but may depend on the device's processing conditions or desired characteristics. For example, the technical features of the present invention are described using cross-sectional views, which are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of manufacturing processes and/or tolerances are to be expected and should not be construed as limiting.
Furthermore, spatially relative terms, such as "below," "below …," "below," "…" and "above," are used for ease of describing the relationship between elements or features depicted in the drawings; spatially relative terms may encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures.
It is first noted that the microstructure can be improved by treating the surface of the cured copolymer (copolymer) by plasma treatment, such as the piezoelectric layer 10 or 10a of fig. 1 or 2. That is, the roughness of the copolymer surface is reduced by the addition of the plasma, so that the Water Contact Angle (WCA) becomes smaller, the materials spread on the copolymer surface can be better attached thereon, the intermolecular forces of the materials can be closer to each other, and van der waals force can be exerted to achieve sufficient bonding strength. If the surface of the copolymer is rough, the effective area of the copolymer that the silver (Ag) atoms can contact is reduced, which causes a problem that the silver layer (Ag layer) (e.g., silver layer 20 of fig. 1 or fig. 2) is easily peeled off (peeling).
Accordingly, embodiments of the present invention provide a method for improving adhesion of a piezoelectric element, which solves the above-mentioned problems. Hereinafter, a method for improving adhesion of a piezoelectric element according to an embodiment of the present invention will be described with reference to the drawings.
First, referring to fig. 3, fig. 3 is a schematic diagram illustrating a method for improving adhesion of a piezoelectric device according to an embodiment of the invention. As shown in fig. 3, in the method for improving adhesion of a piezoelectric element according to an embodiment of the present invention, the solute particles 120 and a solvent mixture 130 are fully mixed, that is, the solute particles 120 are uniformly dissolved in the solvent mixture 130 to form a slurry; the solute particles 120 are piezoelectric materials, such as copolymers of vinylidene fluoride and trifluoroethylene. In the embodiment of the present invention, the solvent mixture 130 is formed by uniformly mixing a low boiling point solvent and a high boiling point solvent. In addition, the high boiling point solvent is a material having high solubility. The low boiling point solvent and the high boiling point solvent are independent systems from each other, and neither of them chemically reacts with the solute particles 120. The low boiling point solvent has a different vapor pressure than the high boiling point solvent.
Next, as shown in fig. 3, a slurry obtained by fully mixing the solute particles 120 and the solvent mixture 130 is coated on a substrate (not shown) to form a wet film 110. Then, a vacuum pump (not shown) may be used to perform a vacuum drying step on the wet film 110 under different vacuum degrees (or vacuum values), so that the solvent in the wet film 110 is largely volatilized to reduce the thickness of the wet film 110. It is specifically noted that the thickness of the wet film 110' is constantly changing during the vacuum drying step. For example, in the vacuum drying step, the evaporation rate of the solvent is affected by the boiling point, and the solvent easily reaches the vapor pressure at a low temperature and evaporates as the vacuum value increases, so that the low boiling point solvent and the high boiling point solvent in the wet film 110 partially escape to form a thin wet film 110'. That is, the overall film thickness of the wet film 110 is greatly reduced because the saturated vapor pressure of the solvent causes a large amount of solvent to be pumped away, and the remaining wet film 110' has a higher density of solute particles 120.
As shown in fig. 3, the evaporation rate of the solvent is affected by the boiling point, and the solvent easily reaches the vapor pressure at a low temperature and evaporates as the vacuum value increases. The rate of solvent release from the solute particles 120 affects the surface roughness of the vacuum drying, which may cause the surface of the wet film 110 ' to have a significantly rough undulation characteristic if the fast dry (fast dry), i.e., the solute particles 120 are exposed on the surface of the wet film 110 ', which causes the surface of the wet film 110 ' to have a significantly rough undulation, which may form a larger water contact angle, and subsequently requires the atmospheric pressure plasma to repair the surface. To avoid such problems, embodiments of the present invention reduce the surface roughness formed by piezoelectric particles (referred to herein as solute particles 120) during drying by varying the type and amount of solvent in the piezoelectric coating of the fingerprint identification device (referred to herein as "piezoelectric device"). The physical characteristics can improve the surface structure after film formation, improve the adhesion condition between layers and reduce the interface loss of ultrasonic transmission.
Furthermore, the present inventors found that solute particles are uniformly dispersed in a wet film layer formed by a solution system under the same unit volume, and solvent molecules gradually overflow and escape to the outside of the wet film layer along with the increase of vacuum degree in the drying process. The vacuum system is established with its rate limitation, and the initial desorption is that a large amount of solvent molecules gradually reach saturation and stability while participating in the desorption process. This process represents that the vacuum drying process is not a constant-speed continuous moving process, and the solute molecules cannot catch up with the alignment process, so that discontinuous fluctuation is generated near the liquid-air interface of the environment, and a wet film layer with high roughness is formed. If a solvent with a high boiling point is introduced, the rapid volatilization of the solvent with a low boiling point can be suppressed, and the rapid drying (fast dry) mechanism is reduced to form a more continuous wet film surface at the initial stage for obtaining a smaller water contact angle. However, only the high boiling point solvent is used singly, a large amount of solvent molecules still volatilize at the later stage of vacuum drying, and the dissipation of the two periods has obvious fall, so that the balanced gas-liquid motion balance is achieved by two solvent systems with high boiling point and low boiling point. In addition, the solvent system with the high boiling point represents a heavier molecular weight, which produces too high a bonding characteristic with the co-polymer to meet film thickness requirements at a specific solids content requirement, and a low boiling point solvent system is required to adjust the wet printing characteristics.
Therefore, in order to achieve the effect of slow drying (fast dry) of the wet film 110 and avoid the defect of surface roughness caused by fast drying (fast dry), the inventors further propose other embodiments and describe the following.
In other embodiments of the present invention, the solute particles 120 are copolymers of vinylidene fluoride and trifluoroethylene; the low-boiling solvent adopts butanone (MEK) with the boiling point of 80 ℃; the high boiling solvent used was Dimethylacetamide (DMAC) having a boiling point of 166 ℃. When the weight percentage of solute particles 120 is X wt%; the weight percentage of the low-boiling point solvent is Y wt%; when the weight percentage of the high boiling point solvent is Z wt%, X + Y + Z is 100% and X is 8-35 wt%, and (Y + Z) is 65-92 wt%. In addition, if the proportion of Y is higher than Z, the volatilization rate of the system is too fast; on the other hand, if the ratio of Z is higher than Y, the volatilization rate of the system is too slow, so that in the solvent mixture 130 composed of the low boiling point solvent and the high boiling point solvent, the weight percentage of the low boiling point solvent is 37 to 46 wt%, and the weight percentage of the high boiling point solvent is 63 to 54 wt% (refer to fig. 4), a surface structure with a lower roughness can be formed with respect to the solute particles 120 (vinylidene fluoride and trifluoroethylene copolymer).
In other embodiments, the high-boiling point solvent and the low-boiling point solvent may be in different proportions, and the higher the boiling point of the solvent, the higher the proportion of the solvent, the more stable volatilization effect can be exhibited. Referring to fig. 4, fig. 4 is a schematic diagram illustrating the solvent evaporation rate during vacuum drying according to an embodiment of the present invention, wherein curve I represents a high boiling point solvent; curve II represents a low boiling solvent; curve III represents the solvent after mixing. As can be seen from fig. 4, the solvent has a more stable evaporation rate after mixing and can form a surface structure with a lower roughness than the case of only the high or low boiling point solvent. In addition, fig. 5 is a schematic diagram illustrating the solvent evaporation rate during vacuum drying according to another embodiment of the present invention. In the example of FIG. 5, curve IV represents a high boiling solvent; curve V represents a low boiling solvent; curve VI represents the post-mix solvent; in the solvent mixture 130 composed of the low boiling point solvent and the high boiling point solvent, the ratio of Y is 55-67 wt%, and the ratio of Z is 45-33 wt%. As can be seen from fig. 5, the mixed solvent has a more stable evaporation rate and can form a surface structure with lower roughness than the case of only the high or low boiling point solvent. In addition, fig. 6 is a schematic diagram illustrating the solvent evaporation rate during vacuum drying according to another embodiment of the present invention. The low-boiling point solvent adopts ethylene glycol monoethyl ether with the boiling point of 135 ℃; the high boiling solvent used was Dimethylacetamide (DMAC) having a boiling point of 166 ℃. In the example of FIG. 6, curve VII represents a high boiling solvent; curve VIII represents a low boiling solvent; curve VIIII represents the post-mixing solvent; in the solvent mixture 130 composed of the low boiling point solvent and the high boiling point solvent, the ratio of Y is 15-85 wt%, and the ratio of Z is 85-15 wt%. As can be seen from fig. 6, it is found that the volatilization rates are not greatly different under different mixture ratio conditions, and the roughness of the formed surface structure is not significantly changed.
The generation of hydrogen bonds between the solute particles 120 and the polar solvent such as the high-boiling point solvent and the low-boiling point solvent is also an influence factor for determining the mixture ratio of the three.
Next, referring to fig. 3 again, after vacuum drying, a first baking step is performed on the wet film 110 'to shape the surface of the wet film 110' to form the wet film 110 ″. Finally, a second baking step is performed on the wet film 110 ″ to solidify the wet film and form a piezoelectric element 110 ″. It should be noted that the baking step referred to in this embodiment includes soft baking and hard baking, and in other possible schemes, a multi-stage baking procedure may also be adopted, wherein in the soft baking step, the material or wet film is mainly preformed, for example, baking is provided in an environment of 70-80 ℃ for 40-60 minutes, and in the hard baking step, the material or wet film is mainly cured or the preformed material is baked, for example, baking is provided in an environment of 130-150 ℃ for 3-5 hours, and in any scheme that can be implemented according to this, persons skilled in the art may make equivalent modifications or adjustments, and the present invention is not limited thereto.
In addition, in other embodiments, the slurry further comprises other solvents having different vapor pressures.
Additionally, in other embodiments, the low boiling point solvent has a boiling point less than 100 ℃ and the high boiling point solvent has a boiling point greater than 140 ℃.
In summary, in the embodiments of the present invention, a high-boiling-point solvent is added to reduce the drying rate of the piezoelectric molecules of the other low-boiling-point solvents in the slurry, so that the volume of the low boiling point is restricted due to the existence of the high-boiling-point molecules in the gas-liquid equilibrium process, the volume change rate of the solvent system is reduced, and the overall structure after drying is more continuous through the continuous and stable change of the volatilization of the molecules, so as to improve the surface roughness of the fingerprint identification device.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the present invention.
Claims (10)
1. A method for improving adhesion of a piezoelectric element, comprising:
fully mixing solute particles, a low boiling point solvent and a high boiling point solvent to form a slurry, wherein the solute particles are piezoelectric materials;
coating the slurry on a substrate to form a wet film;
performing a vacuum drying step on the wet film under different vacuum degrees to reduce the thickness of the wet film;
carrying out a first baking step on the wet film to shape the surface of the wet film; and
and performing a second baking step on the wet film to solidify the wet film to form the piezoelectric element.
2. The method for improving the adhesion of a piezoelectric element according to claim 1, wherein the high-boiling solvent is a material having high solubility.
3. The method of improving adhesion of a piezoelectric element according to claim 1, wherein the solute particles are a copolymer of vinylidene fluoride and trifluoroethylene.
4. The method of claim 3, wherein the low boiling point solvent and the high boiling point solvent are independent systems and do not react with the solute particles.
5. The method for improving the adhesion of a piezoelectric element according to claim 1, wherein the low-boiling point solvent and the high-boiling point solvent have different vapor pressures.
6. The method of claim 5, wherein the paste further comprises other solvents having different vapor pressures.
7. The method of improving the adhesion of a piezoelectric element according to claim 1, wherein the low boiling point solvent has a boiling point of less than 100 ℃ and the high boiling point solvent has a boiling point of more than 140 ℃.
8. The method for improving the adhesion of a piezoelectric element according to claim 2 or 7, wherein the low-boiling solvent is Methyl Ethyl Ketone (MEK) and the high-boiling solvent is Dimethylacetamide (DMAC).
9. The method for improving the adhesion of a piezoelectric element according to claim 1, wherein the solute particles are present in an amount of 8 to 35 wt%, and the sum of the low-boiling point solvent and the high-boiling point solvent is present in an amount of 65 to 92 wt%.
10. The method of claim 9, wherein in a solvent mixture of the low-boiling point solvent and the high-boiling point solvent, the weight percentage of the low-boiling point solvent is 37-46 wt%, and the weight percentage of the high-boiling point solvent is 54-63 wt%.
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TW111118274A TWI798087B (en) | 2022-05-12 | 2022-05-16 | Method for improving the adhesion of piezoelectric elements |
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JP7259605B2 (en) * | 2019-07-12 | 2023-04-18 | 三菱マテリアル株式会社 | Piezoelectric film and piezoelectric element |
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