TW202217855A - Electromagnetic shielding film and manufacturing method - Google Patents
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Description
本發明涉及電磁屏蔽技術領域,尤其涉及一種電磁屏蔽膜及其製作方法。The invention relates to the technical field of electromagnetic shielding, in particular to an electromagnetic shielding film and a manufacturing method thereof.
在通信以及電子産品等領域中通常會使用電磁屏蔽膜以屏蔽設備本身産生的電磁波噪聲或者來自外部的電磁波噪聲。爲了達到更好的屏蔽效果,目前通常採用增厚電磁屏蔽膜中的屏蔽層的方法。然而,單純的增厚屏蔽層會導致電磁波屏蔽層的厚度、重量以及剛性增加,無法達到輕、薄以及高撓性的要求。同時,現有的屏蔽層一般爲銅箔,由於銅箔的緻密性,使得水汽無法藉由銅箔擴散,在高溫條件下製作時易爆板。此外,設置在屏蔽層上的異方性導電膠的導電效果較差,導致界面阻抗增加,使得信號傳回時效果變差。In the fields of communication and electronic products, electromagnetic shielding films are usually used to shield electromagnetic wave noise generated by the device itself or electromagnetic wave noise from the outside. In order to achieve a better shielding effect, a method of thickening the shielding layer in the electromagnetic shielding film is usually adopted at present. However, simply thickening the shielding layer will lead to an increase in the thickness, weight and rigidity of the electromagnetic wave shielding layer, failing to meet the requirements of lightness, thinness and high flexibility. At the same time, the existing shielding layer is generally copper foil. Due to the compactness of the copper foil, the water vapor cannot diffuse through the copper foil, and the board may explode when fabricated under high temperature conditions. In addition, the conductive effect of the anisotropic conductive adhesive disposed on the shielding layer is poor, which leads to an increase in the interface impedance, so that the effect when the signal is transmitted back becomes poor.
有鑒於此,本發明提供一種能夠解決上述至少一不足之處的的電磁屏蔽膜的製作方法。In view of this, the present invention provides a method for fabricating an electromagnetic shielding film that can solve at least one of the above disadvantages.
另,還有必要提供一種由上述製作方法製得的電磁屏蔽膜。In addition, it is also necessary to provide an electromagnetic shielding film produced by the above-mentioned production method.
本發明提供一種電磁屏蔽膜的製作方法,包括以下步驟:The present invention provides a method for making an electromagnetic shielding film, comprising the following steps:
提供承載膜;以及provide a carrier film; and
在所述承載膜上形成金屬屏蔽層,從而得到所述電磁屏蔽膜,其中,所述金屬屏蔽層包括樹枝狀金屬粉,所述金屬屏蔽層具有三維多孔網絡結構。A metal shielding layer is formed on the carrier film to obtain the electromagnetic shielding film, wherein the metal shielding layer includes dendritic metal powder, and the metal shielding layer has a three-dimensional porous network structure.
本發明還提供一種電磁屏蔽膜,包括:The present invention also provides an electromagnetic shielding film, comprising:
承載膜;以及a carrier film; and
金屬屏蔽層,所述金屬屏蔽層位於所述承載膜上,所述金屬屏蔽層包括樹枝狀金屬粉,所述金屬屏蔽層具有三維多孔網絡結構。A metal shielding layer, the metal shielding layer is located on the carrier film, the metal shielding layer comprises dendritic metal powder, and the metal shielding layer has a three-dimensional porous network structure.
本發明中的所述金屬屏蔽層具有三維多孔網絡結構,當電磁波入射至所述金屬屏蔽層時,一部分電磁波在所述金屬屏蔽層的表面産生反射,另一部分電磁波則在所述金屬屏蔽層的內部經過多重反射後被吸收,從而減少電磁波對所述電磁屏蔽膜內部線路信號的影響。同時,所述樹枝狀金屬粉屬微觀結構,樹枝狀結構相互交錯補償,可避免穿刺現象。所述金屬屏蔽層具有三維多孔網絡結構,能夠防止所述絕緣層與所述金屬屏蔽層之間水汽累積,提供逸散的路徑,使得在後段高溫製作時不會産生爆板。The metal shielding layer in the present invention has a three-dimensional porous network structure. When electromagnetic waves are incident on the metal shielding layer, part of the electromagnetic waves are reflected on the surface of the metal shielding layer, and another part of the electromagnetic waves are reflected on the surface of the metal shielding layer. The inside is absorbed after multiple reflections, thereby reducing the influence of electromagnetic waves on the internal circuit signals of the electromagnetic shielding film. At the same time, the dendritic metal powder has a microstructure, and the dendritic structures are staggered and compensated for each other, which can avoid the puncture phenomenon. The metal shielding layer has a three-dimensional porous network structure, which can prevent the accumulation of water vapor between the insulating layer and the metal shielding layer, and provide an escape path, so that the explosion board will not be generated during high temperature production in the later stage.
下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅爲本發明一部分實施例,而不爲全部的實施例。基於本發明中的實施例,本領域具有通常知識者在沒有作出創造性勞動前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the art without creative efforts shall fall within the protection scope of the present invention.
需要說明,當組件被稱為“固定於”另一個組件,它可以直接在另一個組件上或者也可以存在居中的組件。當一個組件被認為“連接”另一個組件,它可以為直接連接到另一個組件或者可能同時存在居中組件。當一個組件被認為“設置於”另一個組件,它可以為直接設置在另一個組件上或者可能同時存在居中組件。It should be noted that when a component is referred to as being "fixed to" another component, it can be directly on the other component or there may also be an intervening component. When a component is said to be "connected" to another component, it can be directly connected to another component or there may be an intervening component at the same time. When a component is considered to be "set on" another component, it can be set directly on the other component or there may be a co-existing centered component.
除非另有定義,本文所使用的所有的技術和科學術語與屬於本發明技術領域的具有通常知識者通常理解的含義相同。本文中在本發明的說明書中所使用的術語只爲了描述具體的實施例的目的,不旨在於限制本發明。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the present invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention.
爲能進一步闡述本發明達成預定目的所採取的技術手段及功效,以下結合附圖及較佳實施方式,對本發明作出如下詳細說明。In order to further illustrate the technical means and effects adopted by the present invention to achieve the predetermined purpose, the present invention is described in detail below with reference to the accompanying drawings and preferred embodiments.
請參閱圖1,本發明較佳實施例提供一種電磁屏蔽膜的製作方法,包括如下步驟:Referring to FIG. 1, a preferred embodiment of the present invention provides a method for manufacturing an electromagnetic shielding film, which includes the following steps:
步驟S11,請參閱圖2,提供承載膜10。In step S11 , referring to FIG. 2 , the
在本實施例中,所述承載膜10可爲PET薄膜。In this embodiment, the
步驟S12,在所述承載膜10上形成絕緣層20。In step S12 , an
其中,所述絕緣層20遠離所述承載膜10的表面具有一定的粗糙度。所述絕緣層20的厚度爲5-7微米。Wherein, the surface of the
所述絕緣層20可包括樹脂、橡膠、碳黑、硬化劑、無機填料以及阻燃劑等。其中,所述樹脂可爲環氧樹脂、聚醯亞胺、聚氨酯、壓克力以及酚醛樹脂等。The
步驟S13,在所述絕緣層20上形成金屬屏蔽層30。Step S13 , forming a
請一併參閱圖3和圖4,所述金屬屏蔽層30包括樹枝狀金屬粉,所述金屬屏蔽層30具有三維多孔網絡結構。其中,所述樹枝狀金屬粉的粒徑爲納米尺寸。具體地,所述樹枝狀納米金屬粉爲樹枝狀納米銀粉。其中,所述樹枝狀納米銀粉的粒徑大致爲100nm。Please refer to FIG. 3 and FIG. 4 together, the
具體地,可藉由塗布銀漿或者噴塗銀墨水並烘乾的方式形成所述金屬屏蔽層30。其中,所述塗布的方式可爲凹版印刷式、接觸塗布式、模具塗布式、缺角輪塗布式、刮刀式、刀塗式、噴塗式、棒塗式、旋塗式以及浸塗式等。Specifically, the
當藉由塗布銀漿並烘乾的方式形成所述金屬屏蔽層30時,所述金屬屏蔽層30除包括所述樹枝狀金屬粉外,還包括樹脂(如環氧樹脂)、增稠劑以及硬化劑。其中,所述增稠劑在所述金屬屏蔽層30中的質量比小於3%。優選地,所述增稠劑在所述金屬屏蔽層30中的質量比爲0.5-2%。所述增稠劑可爲二氧化矽系化合物、聚碳酸系化合物、聚氨基甲酸酯系化合物以及脲素化合物等。所述增稠劑可減緩所述樹枝狀金屬粉在所述塗布製程中的沉降。其中,所述硬化劑在所述金屬屏蔽層30中的質量比爲10-20%。所述硬化劑可爲4,4'-二氨基二苯諷、3,3'-二氨基二苯諷、2,2-雙[4-(4-氨基苯氧基)苯基]丙烷、2,2-雙[4-(4-氨基苯氧基)苯 基]六氣丙烷以及2,2-雙[4-(3-氨基苯氧基)苯基]丙烷等。所述硬化劑可使環氧樹脂等低分子聚合物或單體化合物經化學反應生成高分子化合物,或可使線型高分子化合物交聯成體型高分子化合物,從而使所述金屬屏蔽層30具有一定的機械强度和穩定性。當藉由噴塗銀墨水並烘乾的方式形成所述金屬屏蔽層30時,所述金屬屏蔽層30除包括所述樹枝狀金屬粉外,還包括樹脂(如環氧樹脂)以及增稠劑。When the
其中,所述金屬屏蔽層30的厚度爲3-10微米。優選地,所述金屬屏蔽層30的厚度爲2.5微米。所述金屬屏蔽層30的密度大致爲1.2g/cm
2。
Wherein, the thickness of the
步驟S14,在所述金屬屏蔽層30上形成導電接著層40,從而得到所述電磁屏蔽膜100。In step S14 , a conductive
所述導電接著層40的厚度爲5-8微米。所述導電接著層40可包括樹脂、導電粉、橡膠、硬化劑以及阻燃劑等。其中,所述樹脂可爲環氧樹脂、聚醯亞胺、聚氨酯、壓克力以及酚醛樹脂等。所述導電粉可爲銀粉、銅粉、銀包銅粉、鎳粉、鋁粉、白金粉、碳粉、納米銀線、納米碳管以及石墨烯等。所述導電粉使所述導電接著層40具有導電性。The thickness of the conductive
請參閱圖2,本發明較佳實施例還提供一種電磁屏蔽膜100,包括依次層疊設置的承載膜10、絕緣層20、金屬屏蔽層30以及導電接著層40。Referring to FIG. 2 , a preferred embodiment of the present invention further provides an
在本實施例中,所述承載膜10可爲PET薄膜。In this embodiment, the
所述絕緣層20遠離所述承載膜10的表面粗糙。所述絕緣層20的厚度爲5-7微米。所述絕緣層20可包括樹脂、橡膠、碳黑、硬化劑、無機填料以及阻燃劑等。其中,所述樹脂可爲環氧樹脂、聚醯亞胺、聚氨酯、壓克力以及酚醛樹脂等。The surface of the insulating
請一併參閱圖3和圖4,所述金屬屏蔽層30包括樹枝狀金屬粉,所述金屬屏蔽層30具有三維多孔網絡結構。其中,所述樹枝狀金屬粉的粒徑爲納米尺寸。具體地,所述樹枝狀納米金屬粉爲樹枝狀納米銀粉。其中,所述樹枝狀納米銀粉的粒徑大致爲100nm。Please refer to FIG. 3 and FIG. 4 together, the
在一種實施方式中,所述金屬屏蔽層30除包括所述樹枝狀金屬粉外,還包括樹脂(如環氧樹脂)、增稠劑以及硬化劑。其中,所述增稠劑在所述金屬屏蔽層30中的質量比小於3%。優選地,所述增稠劑在所述金屬屏蔽層30中的質量比爲0.5-2%。所述增稠劑可爲二氧化矽系化合物、聚碳酸系化合物、聚氨基甲酸酯系化合物以及脲素化合物等。所述增稠劑可減緩所述樹枝狀金屬粉在所述塗布製程中的沉降。其中,所述硬化劑在所述金屬屏蔽層30中的質量比爲10-20%。所述硬化劑可爲4,4'-二氨基二苯諷、3,3'-二氨基二苯諷、2,2-雙[4-(4-氨基苯氧基)苯基]丙烷、2,2-雙[4-(4-氨基苯氧基)苯 基]六氣丙烷以及2,2-雙[4-(3-氨基苯氧基)苯基]丙烷等。所述硬化劑可使環氧樹脂等低分子聚合物或單體化合物經化學反應生成高分子化合物,或可使線型高分子化合物交聯成體型高分子化合物,從而使所述金屬屏蔽層30具有一定的機械强度和穩定性。In one embodiment, in addition to the dendritic metal powder, the
在另一種實施方式中,所述金屬屏蔽層30除包括所述樹枝狀金屬粉外,還包括樹脂(如環氧樹脂)以及增稠劑。In another embodiment, in addition to the dendritic metal powder, the
其中,所述金屬屏蔽層30的厚度爲3-10微米。優選地,所述金屬屏蔽層30的厚度爲2.5微米。所述金屬屏蔽層30的密度大致爲1.2g/cm
2。
Wherein, the thickness of the
所述導電接著層40的厚度爲5-8微米。所述導電接著層40可包括樹脂、導電粉、橡膠、硬化劑以及阻燃劑等。其中,所述樹脂可爲環氧樹脂、聚醯亞胺、聚氨酯、壓克力以及酚醛樹脂等。所述導電粉可爲銀粉、銅粉、銀包銅粉、鎳粉、鋁粉、白金粉、碳粉、納米銀線、納米碳管以及石墨烯等。所述導電粉使所述導電接著層40具有導電性。The thickness of the conductive
下面藉由實施例和對比例對本發明進行具體說明。The present invention will be specifically described below by means of examples and comparative examples.
實施例1Example 1
第一步,在厚度爲55 μm 的PET承載膜上塗布絕緣油墨以形成厚度爲6 μm的絕緣層。其中,絕緣油墨包括50wt%的環氧樹酯、5wt%的硬化劑、2wt%的碳黑以及15wt%的阻燃劑等。In the first step, the insulating ink was coated on the PET carrier film with a thickness of 55 μm to form an insulating layer with a thickness of 6 μm. Wherein, the insulating ink includes 50wt% epoxy resin, 5wt% hardener, 2wt% carbon black, 15wt% flame retardant and the like.
第二步,在所述絕緣層上塗布銀漿,並在120℃的溫度乾燥10 min,烘乾後形成厚度爲5 μm的多孔導電銀屏蔽層。其中,所述銀漿包括8wt%的環氧樹脂、2wt%的硬化劑、45 wt%的樹枝狀銀粉、0.5wt%的增稠劑以及溶劑等。In the second step, silver paste was coated on the insulating layer, and dried at a temperature of 120° C. for 10 min, and a porous conductive silver shielding layer with a thickness of 5 μm was formed after drying. Wherein, the silver paste includes 8wt% epoxy resin, 2wt% hardener, 45wt% dendritic silver powder, 0.5wt% thickener, solvent and the like.
第三步,在所述銀屏蔽層上塗布導電膠以形成厚度爲6 μm導電接著層。從而得到電磁屏蔽膜。其中,所述導電接著層包括70wt%的環氧樹酯、10wt%的橡膠、10wt%的硬化劑、0.2wt%的導電粉以及5wt%的接著促進劑等。In the third step, a conductive adhesive is coated on the silver shielding layer to form a conductive adhesive layer with a thickness of 6 μm. Thus, an electromagnetic shielding film is obtained. Wherein, the conductive adhesive layer includes 70wt% epoxy resin, 10wt% rubber, 10wt% hardener, 0.2wt% conductive powder, 5wt% adhesive accelerator and the like.
實施例2Example 2
實施例2與實施例1的區別在於:The difference between embodiment 2 and embodiment 1 is:
在第二步中所述樹枝狀銀粉在所述銀漿中的質量比爲45%;所述乾燥的溫度爲110℃;所述銀屏蔽層的厚度爲3.7 μm。其中,所述銀漿包括8wt%的環氧樹脂、2wt%的硬化劑、40 wt%的樹枝狀銀粉、0.3wt%的增稠劑以及溶劑等。In the second step, the mass ratio of the dendritic silver powder in the silver paste is 45%; the drying temperature is 110° C.; the thickness of the silver shielding layer is 3.7 μm. Wherein, the silver paste includes 8wt% epoxy resin, 2wt% hardener, 40wt% dendritic silver powder, 0.3wt% thickener, solvent and the like.
在第三步中導電接著層的厚度爲7 μm。The thickness of the conductive adhesive layer in the third step was 7 μm.
實施例3Example 3
實施例3與實施例1的區別在於:The difference between Example 3 and Example 1 is:
在第二步中在所述絕緣層上塗布銀墨水,並在110℃的溫度乾燥10 min,烘乾後形成厚度爲2.5 μm的多孔導電銀屏蔽層。其中,所述銀墨水包括3wt%的環氧樹脂、20wt%的樹枝狀銀粉、1wt%的增稠劑以及溶劑(水或醇)等。In the second step, silver ink was coated on the insulating layer, and dried at a temperature of 110° C. for 10 min. After drying, a porous conductive silver shielding layer with a thickness of 2.5 μm was formed. Wherein, the silver ink includes 3wt% epoxy resin, 20wt% dendritic silver powder, 1wt% thickener and solvent (water or alcohol) and the like.
在第三步中導電接著層的厚度爲7 μm。The thickness of the conductive adhesive layer in the third step was 7 μm.
對比例1Comparative Example 1
在厚度爲55 μm 的PET承載膜上形成一層厚度爲2μm的銅箔,從而得到電磁屏蔽膜。A layer of copper foil with a thickness of 2 μm was formed on a PET carrier film with a thickness of 55 μm to obtain an electromagnetic shielding film.
對比例2Comparative Example 2
在厚度爲55 μm 的PET承載膜上濺鍍銀墨水以形成厚度爲1.5μm的銀層,從而得到電磁屏蔽膜。A silver ink was sputtered on a PET carrier film with a thickness of 55 μm to form a silver layer with a thickness of 1.5 μm, thereby obtaining an electromagnetic shielding film.
將實施例1-3以及對比例1-2獲得的電磁屏蔽膜進行電磁性能(包括金屬屏蔽層的電阻以及電磁屏蔽膜的屏蔽效應)測試,以及進行密著性、彎折性以及耐熱性能測試。The electromagnetic shielding films obtained in Examples 1-3 and Comparative Examples 1-2 were subjected to electromagnetic performance tests (including the resistance of the metal shielding layer and the shielding effect of the electromagnetic shielding film), as well as the adhesion, bending and heat resistance tests. .
其中,金屬屏蔽層的電阻的測試爲:將四點探針量測儀中的四點探針直接接觸金屬屏蔽層表面,讀取測量儀顯示的表面電阻值。The resistance test of the metal shielding layer is as follows: directly contact the four-point probe in the four-point probe measuring instrument to the surface of the metal shielding layer, and read the surface resistance value displayed by the measuring instrument.
電磁屏蔽膜的屏蔽效應的測試爲:將電磁屏蔽膜置於兩同軸管之間,利用垂直入射的遠場平面波長量測電磁屏蔽膜,經計算求得電磁屏蔽效應。電磁屏蔽膜的密著性的測試爲:將電磁屏蔽膜貼覆於預屏蔽的物體表面,用劃格器在塗層上切出十字格子圖形,利用百格膠帶測試面漆或貼合層被膠帶黏起的數量,並依照百分比做判定,當測試結果爲“PASS”時,則表明密著性達到要求。電磁屏蔽膜的彎折性的測試爲:將電磁屏蔽膜彎折180度,測試電磁屏蔽膜不産生斷裂的次數。The test of the shielding effect of the electromagnetic shielding film is as follows: the electromagnetic shielding film is placed between two coaxial tubes, the electromagnetic shielding film is measured by the far-field plane wavelength of vertical incidence, and the electromagnetic shielding effect is obtained by calculation. The adhesion test of the electromagnetic shielding film is as follows: paste the electromagnetic shielding film on the surface of the pre-shielded object, cut out a cross lattice pattern on the coating with a cross-cutting device, and use a hundred grid tape to test the topcoat or the adhesive layer. The amount of tape sticking is determined according to the percentage. When the test result is "PASS", it indicates that the adhesion meets the requirements. The bendability test of the electromagnetic shielding film is as follows: bend the electromagnetic shielding film 180 degrees, and test the number of times that the electromagnetic shielding film does not break.
電磁屏蔽膜的耐熱性能的測試爲:若耐熱性測試條件等於288℃、320℃\10sec時,電磁屏蔽膜不産生起泡、剝離等現象,則耐熱性測試結果爲“PASS”,表明電磁屏蔽膜達到耐熱性的要求。The heat resistance test of the electromagnetic shielding film is as follows: if the heat resistance test conditions are equal to 288°C, 320°C\10sec, and the electromagnetic shielding film does not produce blistering, peeling, etc., the heat resistance test result is "PASS", indicating that the electromagnetic shielding The film meets the requirements of heat resistance.
以上具體測試結果記錄於表1。The above specific test results are recorded in Table 1.
表1 本發明實施例1-3以及對比例1-2的製備條件以及測試結果
由表可知,實施例1-3製備的電磁屏蔽膜具有較低的電阻值,較高的電磁屏蔽性能、較强的密著性能、較好的彎折性能以及較高的耐熱性能。It can be seen from the table that the electromagnetic shielding films prepared in Examples 1-3 have lower resistance value, higher electromagnetic shielding performance, stronger adhesion performance, better bending performance and higher heat resistance.
本發明中的所述金屬屏蔽層30具有三維多孔網絡結構,當電磁波入射至所述金屬屏蔽層30時,一部分電磁波在所述金屬屏蔽層30的表面産生反射,另一部分電磁波則在所述金屬屏蔽層30的內部經過多重反射後被吸收,從而減少電磁波對所述電磁屏蔽膜100內部線路信號的影響。同時,所述樹枝狀金屬粉屬微觀結構,樹枝狀結構相互交錯補償,可避免穿刺現象。所述絕緣層20臨近所述金屬屏蔽層30的表面具有一定的粗糙度,且所述金屬屏蔽層30具有三維多孔網絡結構,能夠防止所述絕緣層20與所述金屬屏蔽層30之間水汽累積,提供逸散的路徑,使得在後段高溫製作時不會産生爆板。The
本發明還在所述金屬屏蔽層30上設置所述導電接著層40,所述導電接著層40具備柔韌性,可彌補所述金屬屏蔽層30表面粗糙的缺陷。同時,所述導電接著層40具有良好的導電性,可降低所述金屬屏蔽層30與所述導電接著層40界面的阻抗,從而提高信號傳回時的效果。此外,所述金屬屏蔽層30相較於同體積的銀金屬塊,具有較小的密度及重量。In the present invention, the conductive
以上說明僅僅為對該發明一種優化的具體實施方式,但在實際的應用過程中不能僅僅局限於這種實施方式。對本領域具有通常知識者來說,根據本發明的技術構思做出的其他變形和改變,都應該屬於本發明的保護範圍。The above description is only an optimized specific implementation manner of the invention, but it cannot be limited only to this implementation manner in the actual application process. For those with ordinary knowledge in the art, other modifications and changes made according to the technical concept of the present invention should all belong to the protection scope of the present invention.
100:電磁屏蔽膜 10:承載膜 20:絕緣層 30:金屬屏蔽層 40:導電接著層 100: Electromagnetic shielding film 10: Carrier film 20: Insulation layer 30: Metal shield 40: Conductive bonding layer
圖1為本發明較佳實施例提供的電磁屏蔽膜的製作流程圖。FIG. 1 is a flow chart of the fabrication of the electromagnetic shielding film provided by the preferred embodiment of the present invention.
圖2為本發明較佳實施例提供的電磁屏蔽膜的結構示意圖。FIG. 2 is a schematic structural diagram of an electromagnetic shielding film provided by a preferred embodiment of the present invention.
圖3為圖2中所示的金屬屏蔽層的掃描電鏡圖。FIG. 3 is a scanning electron microscope image of the metal shielding layer shown in FIG. 2 .
圖4為圖2中所示的電磁屏蔽膜的局部放大圖。FIG. 4 is a partial enlarged view of the electromagnetic shielding film shown in FIG. 2 .
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