TWI797418B - 用於校正離子注入半導體製造工具中的部件故障的方法及系統 - Google Patents

用於校正離子注入半導體製造工具中的部件故障的方法及系統 Download PDF

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TWI797418B
TWI797418B TW109102990A TW109102990A TWI797418B TW I797418 B TWI797418 B TW I797418B TW 109102990 A TW109102990 A TW 109102990A TW 109102990 A TW109102990 A TW 109102990A TW I797418 B TWI797418 B TW I797418B
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failure
sensor data
components
additional features
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TW202044314A (zh
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田青 廖
席瑪 迪達瑞
哈瑞克瑞席南 拉札高帕
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美商應用材料股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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    • G05B23/02Electric testing or monitoring
    • G05B23/0205Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0224Process history based detection method, e.g. whereby history implies the availability of large amounts of data
    • G05B23/024Quantitative history assessment, e.g. mathematical relationships between available data; Functions therefor; Principal component analysis [PCA]; Partial least square [PLS]; Statistical classifiers, e.g. Bayesian networks, linear regression or correlation analysis; Neural networks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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    • G05B23/0205Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
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    • G05B23/0243Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
    • G05B23/0254Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
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    • G05B23/0259Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
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    • G06N5/01Dynamic search techniques; Heuristics; Dynamic trees; Branch-and-bound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30405Details
    • H01J2237/30427Details using neural networks or fuzzy logic

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TW109102990A 2019-01-31 2020-01-31 用於校正離子注入半導體製造工具中的部件故障的方法及系統 TWI797418B (zh)

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US16/264,034 US11348813B2 (en) 2019-01-31 2019-01-31 Correcting component failures in ion implant semiconductor manufacturing tool
US16/264,034 2019-01-31

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TW112108684A TWI851071B (zh) 2019-01-31 2020-01-31 用於校正離子注入半導體製造工具中的部件故障的方法及系統

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US (2) US11348813B2 (https=)
JP (2) JP7238146B2 (https=)
KR (2) KR102539586B1 (https=)
CN (2) CN113383282B (https=)
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US11862493B2 (en) 2024-01-02
JP2023085255A (ja) 2023-06-20
CN113383282B (zh) 2024-10-18
TW202329188A (zh) 2023-07-16
JP7472344B2 (ja) 2024-04-22
KR20210109673A (ko) 2021-09-06
KR102731064B1 (ko) 2024-11-14
KR102539586B1 (ko) 2023-06-01
CN113383282A (zh) 2021-09-10
KR20230084317A (ko) 2023-06-12
JP2022523101A (ja) 2022-04-21
CN119398192B (zh) 2025-12-12
US11348813B2 (en) 2022-05-31
CN119398192A (zh) 2025-02-07
TWI851071B (zh) 2024-08-01
WO2020159730A1 (en) 2020-08-06
JP7238146B2 (ja) 2023-03-13
US20200251360A1 (en) 2020-08-06
TW202044314A (zh) 2020-12-01

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