TWI796754B - Method for observing chip fixing process by shadow - Google Patents

Abstract

A method for observing chip fixing process by shadow includes the following steps: sucking a chip by a nozzle above a base plate; emitting a light towards the chip by a lateral light source, and casting a shadow of the chip on the base plate; taking an image of the shadow by a first camera, and transmitting the image of the shadow from the first camera to a control device; controlling the nozzle to move towards the base plate by the control device; and after moving the chip to a chip placing area of the base plate, the shadow is disappeared or remained a small area, and no image of the shadow can be taken by the first camera or only a small area image of the shadow can be taken by the first camera, controlling the nozzle to stop moving by the control device, and fixing the chip on the chip placing area completely. As such, the method can monitor a relative position between the chip and the base plate, control a travel distance of the nozzle, make sure the nozzle directly and precisely to fix the chip on the base plate.

Description

A Method of Using Light and Shadow to Observe the Crystal Bonding Process

The invention relates to a crystal-bonding method, in particular to a method for observing the crystal-bonding process by using light and shadow.

Integrated circuits are fabricated on semiconductor wafers through multiple procedures in a large number of ways, and the wafers are further divided into multiple crystal grains. In other words, a die is a small unpackaged integrated circuit body made of semiconductor material. Divided multiple dies are neatly attached to a carrier film, and then a carrier frame is responsible for transporting the carrier film, and then the dies on the carrier film are sucked by a suction nozzle, and finally the dies are fixed on the carrier film by the suction nozzle The multiple crystal grain placement area of the substrate is convenient for subsequent processing procedures.

As shown in FIG. 1 , before performing the die-bonding process, a distance D1 between the suction nozzle 1 and the substrate 3 is first measured by a distance measuring device (not shown in the figure), and the distance D1 is subtracted from the thickness T of the crystal grain 2. is a moving distance of suction nozzle 1. Next, as shown in FIG. 2A , during the process of the die-bonding process, a distance D2 between the die 2 on the suction nozzle 1 and the substrate 3 is measured by a distance measuring device. Ideally, the drive shaft (not shown) that controls the movement of the suction nozzle 10 remains in a normal state, the distance D1 minus the thickness T of the die 2 is equal to the distance D2, and the moving distance of the suction nozzle 1 is just equal to the distance D2. Therefore, as shown in FIG. 2B , the suction nozzle 1 can directly and accurately fix the die 2 on the die placement area 301 .

However, the relative distance between the suction nozzle 1 and the substrate 3 will always change due to thermal expansion and contraction of the drive shaft controlling the movement of the suction nozzle 1 .

As shown in Figure 3A, if the relative distance between the suction nozzle 1 and the substrate 3 becomes larger, the spacing D2 becomes larger, and the thickness T of the grain 2 deducted from the spacing D1 is smaller than the spacing D2, and the moving distance of the suction nozzle 1 is smaller than the spacing D2. D2. As shown in FIG. 3B , the suction nozzle 1 can only move the die 2 to the top of the die placement area 301 , but cannot directly fix the die 2 on the die placement area 301 . As shown in FIG. 3C , the suction nozzle 1 must stop sucking the die 2 , so that the die 2 can drop onto the die placement area 301 in an air drop manner. However, it is difficult to accurately place the die 2 on the die placement area 301 in the way of air throwing.

As shown in Figure 4A, if the relative distance between the suction nozzle 1 and the substrate 3 becomes smaller, the spacing D2 becomes smaller, and the thickness T of the grain 2 deducted from the spacing D1 is greater than the spacing D2, and the moving distance of the suction nozzle 1 is greater than the spacing D2. As shown in FIG. 4B , although the suction nozzle 1 can directly and accurately fix the die 2 on the die placement area 301 , the suction nozzle 1 will move further toward the substrate 3 to crush the die 2 .

The main purpose of the present invention is to provide a method for observing the crystal bonding process by using light and shadow, which can monitor the relative position of the crystal grain and the substrate in real time by observing the change of light and shadow, and control the moving distance of the suction nozzle to ensure that the suction nozzle can be directly and accurately Securely fix the die on the substrate to prevent the die from being thrown or crushed by the nozzle.

In order to achieve the aforementioned object, the present invention provides a method for observing the crystal bonding process using light and shadow, comprising the following steps: (a) a suction nozzle picks up a crystal grain and is located above a grain placement area of a substrate, and the crystal grain and the substrate Parallel; (b) a light beam from one side of the light source is irradiated toward the direction of the grain at an angle of illumination inclined relative to the grain from one side of the grain, so that a light and shadow of the grain is projected on the substrate; (c) a The first image capture device captures the light and shadow image to obtain a light and shadow image information, and transmits the light and shadow image information to a control device; (d) the control device controls the suction nozzle to move toward the substrate, and the light and shadow gradually move to the die placement area The first image capture device continues to capture the image of the light and shadow and continuously transmits the information of the light and shadow image to the control device; and (e) after the die moves to the die placement area, the light and shadow completely disappear or remain a small range, the first image capture device did not capture the light and shadow image or only captured a small range of light and shadow image to obtain a small range of image information, the control device did not receive the light and shadow image information or received the small range of image information and controlled The suction nozzle stops moving so that the die is completely fixed on the die placement area.

In some embodiments, in step (a), the bottom edge of one side of the die is at a right angle; and, in step (e), after the die is moved to the die placement area, one side of the die is The bottom edge of the bottom edge is completely attached to the die placement area, so that the light and shadow completely disappear, the first image capture device does not capture the light and shadow image, the control device does not receive the light and shadow image information and controls the suction nozzle to stop moving, so that the die Fully fixed on the die placement area.

Preferably, in step (c), the control device calculates a width of the light shadow according to the light and shadow image information; and, in step (d), when the control device determines that the width of the light shadow is equal to a predetermined height, the control device controls the suction nozzle to stop moving and sets the predetermined height as a moving distance, and the control device controls the suction nozzle to continue moving toward the substrate according to the moving distance.

In some embodiments, in step (a), the bottom edge of one side of the die is beveled; and, in step (e), after the die is moved to the die placement area, one side of the die is The bottom edge of the side is not attached to the die placement area, leaving a small range of light and shadow. The first image capture device only captures a small range of light and shadow images to obtain small range image information. The control device receives the small range Image information and control the suction nozzle to stop moving, so that the die is completely fixed on the die placement area.

Preferably, in step (a), a second image capture device captures the oblique image to obtain oblique image information, and transmits the oblique image information to the control device, and the control device Calculate a width of the bevel; in step (c), the control device calculates a width of the light and shadow according to the light and shadow image information; and, in step (d), when the control device determines that the width of the light and shadow is equal to the width of the bevel When the sum of a predetermined height of the crystal grain relative to the substrate is reached, the control device controls the suction nozzle to stop moving and sets the predetermined height as a moving distance, and the control device controls the suction nozzle to continue moving toward the substrate according to the moving distance.

。 Preferably, the predetermined height is 2

.

In some embodiments, in step (c), the first image capture device and the side light source are located on the same side and take pictures from one side of the die in the direction of the die placement area at a shooting angle inclined relative to the substrate , the illumination angle is greater than the shooting angle.

為止，此時晶粒與基板平行。 In some embodiments, in step (a), when the die is tilted with respect to the substrate, a ranging device senses two distances from both sides of the die to the substrate and transmits the equal distance to the control device, which controls The device calculates a difference between the equal intervals, and the control device calculates the angle of the grain relative to the substrate according to the difference, and the control device controls the rotation of the suction nozzle according to the angle until the control device judges that the angle is 0

At this point, the grains are parallel to the substrate.

The effect of the present invention is that the present invention can monitor the relative position of the crystal grain and the substrate in real time by observing the change of light and shadow, and control the moving distance of the suction nozzle to ensure that the suction nozzle can directly and accurately fix the crystal grain on the substrate. Prevent the die from being dropped or crushed by the suction nozzle.

The implementation of the present invention will be described in more detail below with reference to the drawings and reference symbols, so that those skilled in the art can implement it after studying this specification.

Please refer to Fig. 5 to Fig. 9, Fig. 5 is a flowchart of the method for observing the crystal bonding process by using light and shadow of the present invention, Fig. 6 is a schematic diagram of steps S1 to S3 of the first embodiment of the present invention, Fig. 7 and Fig. 8 are A schematic diagram of step S4 in the first embodiment of the present invention, and FIG. 9 is a schematic diagram of step S5 in the first embodiment of the present invention. The invention provides a method for observing the solid crystal process by using light and shadow, comprising the following steps:

Step S1: As shown in FIG. 5 and FIG. 6 , a suction nozzle 10 sucks a die 20 and is located above a die placement area 31 of a substrate 30 , the die 20 is parallel to the substrate 30 , and one side of the die 20 is The bottom edge 21 is a right angle.

1往晶粒20的方向照射，使得晶粒20的一光影22投射在基板30上。 Step S2: As shown in FIG. 5 and FIG. 6 , a light ray 41 from one side to the light source (not shown in the figure) is emitted from one side of the crystal grain 20 at an oblique angle relative to the crystal grain 20

1 is irradiated in the direction of the die 20, so that a light shadow 22 of the die 20 is projected on the substrate 30.

Step S3: As shown in FIG. 5 and FIG. 6, a first image capture device 50 captures the image of the light and shadow 22 to obtain a light and shadow image information 51, and transmits the light and shadow image information 51 to a control device 60, and the control device 60 A width of the light and shadow 22 is calculated according to the light and shadow image information 51 .

為佳。 Step S4: As shown in FIG. 5 and FIG. 7, the control device 60 controls the suction nozzle 10 to move toward the substrate 30, the light and shadow 22 gradually moves toward the direction of the die placement area 31, and the first image capture device 50 continues to capture the light and shadow 22 and continuously transmit the light and shadow image information 51 to the control device 60 . As shown in Figures 5 and 8, when the control device 60 judges that the width of the light shadow 22 is equal to a predetermined height of the crystal grain 20 relative to the substrate 30, the control device 60 controls the suction nozzle 10 to stop moving and the predetermined height is set as a movement distance, the control device 60 controls the suction nozzle 10 to continue moving toward the substrate 30 according to the moving distance. The predetermined height is 2

better.

Step S5: As shown in FIG. 5 and FIG. 9, after the die 20 moves to the die placement area 31, the bottom edge 21 of one side of the die 20 is completely attached to the die placement area 31, so that the light and shadow 22 are completely disappears, the first image capture device 50 does not capture the image of the light and shadow 22 , the control device 60 does not receive the light and shadow image information 51 and controls the suction nozzle 10 to stop moving, so that the die 20 is completely fixed on the die placement area 31 .

Please refer to FIG. 10 to FIG. 13, FIG. 10 is a schematic diagram of step S1 of the second embodiment of the present invention, FIG. 11 is a schematic diagram of step S2 and step S3 of the second embodiment of the present invention, and FIG. 12 is a schematic diagram of the first embodiment of the present invention A schematic diagram of step S4 in the second embodiment, and FIG. 13 is a schematic diagram of step S5 in the second embodiment of the present invention. As shown in FIG. 10 , the difference between step S1 of the second embodiment and step S1 of the first embodiment is that: the bottom edge 21A of one side of the die 20 is an oblique angle, and a second image capture device 70 captures The oblique image information 71 is obtained from the oblique image, and the oblique image information 71 is sent to the control device 60 , and the control device 60 calculates a width of the oblique angle according to the oblique image information 71 . As shown in FIG. 11 , step S2 of the second embodiment is identical to step S2 of the first embodiment, and step S3 of the second embodiment is identical to step S3 of the first embodiment. As shown in FIG. 12 , the difference between step S4 of the second embodiment and step S4 of the first embodiment lies in that: when the control device 60 judges that the width of the light shadow 22 is equal to the width of the bevel angle and the distance between the crystal grain 20 and the substrate 30 When the sum of the predetermined heights is reached, the control device 60 controls the suction nozzle 10 to stop moving and sets the predetermined height as a moving distance, and the control device 60 controls the suction nozzle 10 to continue moving toward the substrate 30 according to the moving distance. As shown in FIG. 13 , the difference between step S5 of the second embodiment and step S5 of the first embodiment is that after the die 20 moves to the die placement area 31 , the bottom edge 21A of one side of the die 20 is not pasted. fit on the die placement area 31, leaving a small area of the light shadow 22, the first image capture device 50 only captures a small area image of the light shadow 22 to obtain a small area of image information 52, the control device 60 receives the small area Scope the image information 52 and control the suction nozzle 10 to stop moving, so that the die 20 is completely fixed on the die placement area 31 .

In summary, no matter whether the drive shaft (not shown) that controls the movement of the suction nozzle 10 remains in a normal state or the relative distance between the suction nozzle 10 and the substrate 30 is constantly changing due to thermal expansion and contraction, the present invention can be used by side The light 41 toward the light source illuminates the crystal grain 20 to project its light shadow 22 on the substrate 30, and uses the first image capture device 50 to observe the change of the light shadow 22, monitor the relative position of the crystal grain 20 and the substrate 30 in real time, and then The moving distance of the suction nozzle 10 is controlled with the control device 60 to ensure that the suction nozzle 10 can directly and accurately fix the die 20 on the die placement area 31 to prevent the die 20 from being thrown or crushed by the suction nozzle 10 .

Furthermore, in the first embodiment, since the bottom edge 21 of the die 20 may be very sharp and form a right angle when cutting, the relative distance between the die 20 and the substrate 30 is substantially equal to the width of the light shadow 22 . In order to control the moving distance of the suction nozzle 10 more accurately, the first embodiment can first set a certain relative distance between the die 20 and the substrate 30 as the predetermined height, and then determine whether the width of the light and shadow 22 is equal to the die height. The relative distance between the die 20 and the substrate 30 is monitored in real time relative to the position of the die 20 and the substrate 30, and this predetermined height is set as the moving distance of the suction nozzle 10 to ensure that the suction nozzle 10 can directly and accurately place the die 20 is fixed on the substrate 30 to prevent the die 20 from being air-dropped or crushed by the suction nozzle 10 .

In addition, in the second embodiment, since the bottom edge 21A of the crystal grain 20 is not sharp enough to form a bevel (that is, a cracked edge), the relationship between the relative distance between the crystal grain 20 and the substrate 30 and the width of the bevel The sum is substantially equal to the width of the light shadow 22 . In order to control the moving distance of the suction nozzle 10 more precisely, the second embodiment can first set a certain relative distance between the die 20 and the substrate 30 as the predetermined height, and then determine whether the width of the light and shadow 22 is equal to the die height. The sum of the relative distance between the grain 20 and the substrate 30 and the width of the bevel, real-time monitoring of the relative position of the grain 20 and the substrate 30, and this predetermined height is set as the moving distance of the suction nozzle 10, to ensure that the suction nozzle 10 can Directly and accurately fix the die 20 on the substrate 30 to prevent the die 20 from being thrown or crushed by the suction nozzle 10 .

為止，此時晶粒20與基板30平行。一般的測距裝置(例如，紅外線測距裝置)能夠將晶粒20與基板30的平行度調整至

0.1

m，高精度的雷射測距裝置則可將晶粒20與基板30的平行度調整至

5nm。 Also, in step S1 of the first embodiment and the second embodiment, when the crystal grain 20 is tilted relative to the substrate 30, a distance measuring device (not shown) senses the distance between the two sides of the crystal grain 20 and the substrate 30. two pitches and transmit the equal pitch to the control device 60, the control device 60 calculates a difference of the equal pitch, the control device 60 calculates the angle of the crystal grain 20 relative to the substrate 30 according to the difference, and the control device 60 calculates the angle of the crystal grain 20 with respect to the substrate 30 according to the angle Control the suction nozzle 10 to rotate until the control device 60 judges that the angle is 0

So far, the crystal grain 20 is parallel to the substrate 30 at this time. A general distance measuring device (for example, an infrared distance measuring device) can adjust the parallelism between the crystal grain 20 and the substrate 30 to

0.1

m, the high-precision laser ranging device can adjust the parallelism between the crystal grain 20 and the substrate 30 to

5nm.

2往晶粒放置區31的方向拍攝，照射角度

1大於拍攝角度

2。是以，側向光源的光線41不會被第一影像擷取裝置50遮住，吸嘴10往基板30的方向移動的過程中，晶粒20的光影能夠一直投射在基板30上，第一影像擷取裝置50能夠持續擷取光影22的影像。 It is worth mentioning that, as shown in FIG. 6 and FIG. 11 , in step S3 of the first embodiment and the second embodiment, the first image capture device 50 is located on the same side as the side light source and A photographing angle inclined relative to the substrate 30 above one side

2 Shooting in the direction of the grain placement area 31, the irradiation angle

1 greater than the shooting angle

2. Therefore, the light 41 of the side light source will not be blocked by the first image capture device 50, and the light and shadow of the die 20 can always be projected on the substrate 30 during the movement of the suction nozzle 10 towards the substrate 30, the first The image capturing device 50 can continuously capture images of the light and shadow 22 .

The above-mentioned ones are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention , all should still be included in the category that the present invention intends to protect.

1:照射角度

2:拍攝角度 1: Suction nozzle 2: Die 3: Substrate 301: Die placement area 10: Suction nozzle 20: Die 21,21A: Bottom edge 22: Light and shadow 30: Substrate 31: Die placement area 41: Light 50: First Image capture device 51: light and shadow image information 52: small-scale image information 60: control device 70: second image capture device 71: oblique image information D1, D2: spacing S1~S5: step T: thickness

1: Irradiation angle

2: Shooting angle

[FIG. 1] is a schematic diagram of measuring the distance between the nozzle and the substrate by the distance measuring device in the prior art. [FIG. 2A] and [FIG. 2B] are schematic diagrams of transferring crystal grains in an ideal state in conventional technology. [FIG. 3A] to [FIG. 3C] are schematic diagrams of transferring die when the relative distance between the suction nozzle and the substrate becomes larger in the conventional technology. [FIG. 4A] and [FIG. 4B] are schematic diagrams of transferring die in the prior art when the relative distance between the nozzle and the substrate becomes smaller. [Fig. 5] is a flow chart of the method for observing the crystal-bonding process by using light and shadow of the present invention. [ FIG. 6 ] is a schematic diagram of steps S1 to S3 in the first embodiment of the present invention. [ FIG. 7 ] and [ FIG. 8 ] are schematic diagrams of step S4 in the first embodiment of the present invention. [ Fig. 9 ] is a schematic diagram of step S5 in the first embodiment of the present invention. [ Fig. 10 ] is a schematic diagram of step S1 in the second embodiment of the present invention. [ Fig. 11 ] is a schematic diagram of step S2 and step S3 of the second embodiment of the present invention. [ Fig. 12 ] is a schematic diagram of step S4 of the second embodiment of the present invention. [ Fig. 13 ] is a schematic diagram of step S5 in the second embodiment of the present invention.

S1~S5: steps

Claims (8)

A method for observing the solid crystal process by using light and shadow, comprising the following steps: (a) a suction nozzle picks up a die and is located above a die placement area of a substrate, the die being parallel to the substrate; (b) A light beam from one side of the light source is irradiated toward the direction of the crystal grain at an angle of illumination oblique to the crystal grain from above one side of the crystal grain, so that a light shadow of the crystal grain is projected on the substrate; (c) a first image capture device captures the image of the light and shadow to obtain a light and shadow image information, and transmits the light and shadow image information to a control device; (d) the control device controls the suction nozzle to move toward the substrate, the light shadow gradually moves toward the die placement area, the first image capture device continues to capture the light shadow image and continues the light shadow image information is sent to the control device; and (e) After the die moves to the die placement area, the light shadow completely disappears or a small area remains, and the first image capture device does not capture the image of the light shadow or only captures the light shadow image A small-scale image is obtained to obtain a small-scale image information, the control device does not receive the light-shade image information or receives the small-scale image information and controls the suction nozzle to stop moving, so that the die is completely fixed on the die placement area . The method for observing the crystal-bonding process using light and shadow as described in Claim 1, wherein, in the step (a), the bottom edge of one side of the grain is at a right angle; and, in the step (e), at After the die moves to the die placement area, the bottom edge of one side of the die is completely attached to the die placement area, so that the light and shadow completely disappear, and the first image capture device does not capture the The light and shadow image, the control device does not receive the light and shadow image information and controls the suction nozzle to stop moving, so that the die is completely fixed on the die placement area. The method of using light and shadow to observe the crystal bonding process as described in claim 2, wherein, in the step (c), the control device calculates a width of the light and shadow according to the light and shadow image information; and, in the step (d) wherein, when the control device judges that the width of the light shadow is equal to a predetermined height of the grain relative to the substrate, the control device controls the suction nozzle to stop moving and sets the predetermined height as a moving distance, the control device The suction nozzle is controlled to continue moving toward the substrate according to the moving distance. The method for observing the crystal bonding process using light and shadow as described in claim 1, wherein, in the step (a), the bottom edge of one side of the crystal grain is an oblique angle; and, in the step (e), After the die moves to the die placement area, the bottom edge of one side of the die is not attached to the die placement area, so that the light shadow remains in a small range, and the first image capture device only The small-scale image of the light and shadow is captured to obtain the small-scale image information. The control device receives the small-scale image information and controls the suction nozzle to stop moving so that the die is completely fixed on the die placement area. The method of using light and shadow to observe the crystal bonding process as described in claim 4, wherein, in the step (a), a second image capture device captures the image of the oblique angle to obtain an oblique angle image information, and the The oblique angle image information is sent to the control device, and the control device calculates a width of the oblique angle according to the oblique angle image information; in the step (c), the control device calculates the light and shadow width according to the light and shadow image information a width; and, in the step (d), when the control device determines that the width of the light shadow is equal to the sum of the width of the bevel and a predetermined height of the grain relative to the substrate, the control device controls the The suction nozzle stops moving and the predetermined height is set as a moving distance, and the control device controls the suction nozzle to continue moving toward the substrate according to the moving distance. The method for observing the solid crystal process using light and shadow as described in claim 3 or 5, wherein the predetermined height is 2

. The method of using light and shadow to observe the crystal bonding process as described in claim 1, wherein, in the step (c), the first image capture device is located on the same side as the side light source and from above the side of the crystal grain Shooting in the direction of the crystal grain placement area at a shooting angle inclined relative to the substrate, the irradiation angle is larger than the shooting angle. The method for observing the crystal bonding process by using light and shadow as described in Claim 1, wherein, in the step (a), when the crystal grain is tilted relative to the substrate, a distance measuring device senses both sides of the crystal grain the two distances from the substrate and transmit the equal distance to the control device, the control device calculates a difference of the equal distance, the control device calculates the angle of the grain relative to the substrate according to the difference, the The control device controls the nozzle to rotate according to the angle until the control device judges that the angle is 0

At this point, the grain is parallel to the substrate.

Images