TWI796504B - Manufacturing method of semiconductor element and semiconductor substrate - Google Patents

Abstract

The manufacturing method of the semiconductor element of the present invention comprises: forming as thin film A step of fixing the layer, the fixing layer combines at least a part of the main surface of the semiconductor thin film layer on the side opposite to the base substrate side with at least a part of the surface of the semiconductor thin film layer in the base substrate; The step of removing a part of the semiconductor thin film layer or the base substrate to form a void; after forming the void, the step of combining the organic material layer formed on the pick-up substrate with the fixed layer on the main surface of the semiconductor thin film layer; combining the organic material layer A step of separating the semiconductor thin film layer from the first substrate by moving the pick-up substrate in a direction away from the base substrate while the layer is fixed; and bonding the semiconductor thin film layer separated from the base substrate to the second substrate. Substrate steps.

Description

Manufacturing method of semiconductor element and semiconductor substrate

The present invention relates to a manufacturing method of a semiconductor element.

Conventionally, there is known a technique for removing a semiconductor epitaxial layer from a base substrate and moving it to another substrate (for example, refer to Patent Document 1).

[Prior art literature]

[Patent Document]

[Patent Document 1] Japanese Patent No. 3813123

Fig. 22 is a diagram for explaining the prior art. FIG. 22 shows a semiconductor structure including a parent substrate 3001 , a sacrificial layer 3002 , a semiconductor epitaxial layer 3003 , and a support 3004 . The sacrificial layer 3002 is provided between the semiconductor epitaxial layer 3003 and the base substrate 3001, and becomes smaller than the semiconductor epitaxial layer 3003 by etching. 3010 shows the etched region of the sacrificial layer 3002.

The support body 3004 has the same shape as the semiconductor epitaxial layer 3003 in cross section in the horizontal direction, and is provided on the semiconductor epitaxial layer 3003 . The support 3004 is a member for supporting the semiconductor epitaxial layer 3003 when the semiconductor epitaxial layer 3003 is removed from the base substrate 3001 . In the prior art shown in FIG. 22 , the semiconductor epitaxial layer 3003 is peeled off from the base substrate 3001 by removing the sacrificial layer 3002 by etching.

In the conventional technique shown in FIG. 22 , the semiconductor epitaxial layer 3003 and the support body 3004 are peeled off from the base substrate 3001 when the etching of the sacrificial layer 3002 is completed. Therefore, there is a problem that at the time when the sacrificial layer 3002 is completely removed and the base substrate 3001 is separated from the semiconductor epitaxial layer 3003, the semiconductor epitaxial layer 3003 needs to be moved and placed in a temporary position different from that of the base substrate 3001. .

Therefore, this invention was made in view of the said point, and it aims at improving the efficiency of the method of manufacturing a semiconductor element by joining a semiconductor epitaxial layer to another board|substrate.

The method for manufacturing a semiconductor element of the present invention is a method for manufacturing a semiconductor element in which a semiconductor thin film layer formed on a first substrate is separated from the first substrate and bonded to a second substrate different from the first substrate, And including: the step of forming a fixed layer as a thin film, the fixed layer connects at least a part of the main surface of the semiconductor thin film layer on the side opposite to the side of the first substrate and the first substrate. At least a part of the surface on one side of the semiconductor thin film layer is combined; by removing a part of the semiconductor thin film layer or the first substrate, or a part of the layer between the semiconductor thin film layer and the first substrate And the step of forming a void; after forming the void, on the main surface of the semiconductor thin film layer, the organic material layer formed on the third substrate and at least a part of the bonding area of the fixed layer and the semiconductor thin film layer a step of combining: moving the third substrate in a direction away from the first substrate in a state where the organic material layer is bonded to the bonding region, thereby moving the semiconductor thin film layer from the first substrate a step of separating the substrate; and a step of bonding the semiconductor thin film layer separated from the first substrate to the second substrate.

According to the present invention, there is an effect that the efficiency of the step of bonding the moved semiconductor epitaxial layer to another substrate can be achieved.

[Summary of Manufacturing Method of Semiconductor Element] In the method of manufacturing a semiconductor element according to this embodiment, the island of the semiconductor thin film layer on the base substrate as the first substrate is moved to the destination substrate as the second substrate, thereby manufacturing the substrate having the destination substrate and the semiconductor thin film. layers of semiconductor components. The "island of the semiconductor thin film layer" is a region of the semiconductor thin film layer having the same size as the base substrate, or a region of the semiconductor thin film layer smaller than the base substrate. An island of one semiconductor thin film layer may be formed on one base material substrate, and islands of a plurality of semiconductor thin film layers may also be formed.

The method for manufacturing a semiconductor element according to this embodiment is characterized in that a pinning layer is formed to support the islands of the semiconductor thin film layer in a state where the islands of the semiconductor thin film layer are separated from the base substrate, so that in order to hold the islands of the semiconductor thin film layer In a state where the islands of the semiconductor thin film layer are separated from the base substrate by moving from the base substrate to the destination substrate, the islands of the semiconductor thin film layer can be maintained in a stable state on the base substrate. In this manner, after connecting the islands of the semiconductor thin film layer to the organic layer formed on the pick-up substrate as the third substrate, the islands of the semiconductor thin film layer can be separated from the base substrate, and the separated semiconductor thin film layer Layer islands are moved to the second substrate.

[Procedure for removing the island of the semiconductor thin film layer from the base substrate] 1A to 1E are diagrams for explaining a method of detaching an island of a semiconductor thin film layer from a base substrate. Hereinafter, an outline of a method for detaching an island of a semiconductor thin film layer from a base substrate will be described with reference to FIGS. 1A to 1E .

First, as shown in FIG. 1A , a removal plan layer 102 is formed on a base substrate 101 as a first substrate, and a semiconductor thin film layer 104 as a semiconductor epitaxial layer is formed on the removal plan layer 102 . The intended removal layer 102 is a region to be removed by etching in a subsequent step.

For example, the planned removal layer 102 is etched by a predetermined etching method (wet etching using a predetermined etching solution or dry etching using a predetermined gas) at a rate different from that of the base substrate 101 and the semiconductor thin film layer 104. material formed. The removal plan layer 102 may also be formed of the same material as the base substrate 101 . For example, the layer to be removed 102 may be a part of the area near the surface of the base substrate 101 .

The semiconductor thin film layer 104 is, for example, a semiconductor thin film layer formed by epitaxial growth or a semiconductor thin film layer formed by wafer bonding. The semiconductor thin film layer 104 can also be a semiconductor thin film layer formed by other methods.

The semiconductor thin film layer 104 is, for example, a III-V compound semiconductor material (such as GaAs, AlGaAs, InGaAs, InP, InAlGaP, etc.), a III-group nitride semiconductor material (such as GaN, InN, AlGaN, InGaN, AlN, etc.), an oxide semiconductor Materials (such as ZnO, Ga ₂ O _3, etc.), Group IV compound semiconductor materials (SiC, etc.), diamond, Si or SiGe, etc. The base material substrate 101 is, for example, a III-V compound semiconductor material substrate (such as a GaAs substrate, an InP substrate, etc.), a III-group nitride semiconductor material substrate (such as a GaN substrate), an oxide semiconductor material substrate (such as a ZnO substrate, Ga ₂ O ₃ substrates, etc.), group IV compound semiconductor substrates (such as SiC, etc.), diamond substrates, or Si, SiGe, etc.

Next, as shown in FIG. 1B , the semiconductor thin film layer 104 is divided into a plurality of island regions to form semiconductor thin film layer islands 108 (hereinafter, the “semiconductor thin film layer islands 108 ” are sometimes referred to as “islands 108 ”). The shape of the island 108 is not limited, and a case where the island 108 is a rectangle will be exemplified in the following description. The island 108 may be, for example, square or hexagonal. Furthermore, instead of dividing the semiconductor thin film layer 104 into a plurality of island regions, single or plural islands 108 may be formed by selectively growing the semiconductor thin film layer 104 on the base substrate 101 .

In addition, the method of forming the island 108 is arbitrary, and the following methods can be exemplified. 1) Method of forming island 108 by processing semiconductor thin film layer 104 through photolithography/etching steps 2) A method of selectively growing the semiconductor thin film layer 104 on the base substrate 101 3) A method of laterally growing the semiconductor thin film layer 104 along the lateral direction (horizontal direction) on the base substrate 101

Hereinafter, the island 108 of one semiconductor thin film layer among the plurality of semiconductor thin film layer islands 108 will be described. In this step, as shown in FIG. 1B , islands 108 including the layer 102 to be removed may also be formed. The area included in the island 108 in the intended removal layer 102 is the intended removal area 106 shown in FIG. 1B .

Next, as shown in FIGS. 1C and 1D , a fixed layer 110 is formed as a thin film, and the fixed layer 110 connects at least a part of the main surface of the island 108 on the side opposite to the base material substrate 101 with the base material substrate 101 . At least a part of the surface on the side of the island 108 is bonded. The fixing layer 110 has, for example, a shape extending between the upper surface of the island 108 and the base substrate 101 , but the fixing layer 110 may have other shapes as long as it can bond the island 108 and the base substrate 101 . For example, the pinning layer 110 may be composed of two thin films that bond regions including both side surfaces in the longitudinal direction of the island 108 to the base substrate 101 . In addition, the fixed layer 110 may be a thin film extending across the island 108 in the short side direction of the island 108 with the base substrate 101 as the starting point and the ending point. In addition, the fixed layer 110 may be parallel to the sides of the island 108 or may be formed to extend in a direction different from the direction of the sides of the island 108 .

In the case of forming the fixed layer 110 extending in the length direction of the island 108, in the step of forming the fixed layer 110, the first direction on the main surface of the semiconductor thin film layer 104 (this direction is, for example, the semiconductor thin film Layer 104 has a high coverage ratio on both sides of the connection direction) extending between the two ends of the semiconductor thin film layer 104, and at least one of the two sides of the semiconductor thin film layer 104 in the second direction perpendicular to the first direction The fixed layer 110 is formed in such a manner that the semiconductor thin film layer 104 is exposed in a part of the region. When the island 108 is rectangular, the coverage rate of the fixed layer 110 on the long sides of the island 108 is smaller than the coverage on the short sides of the island 108 . In this manner, when performing etching described later, it is possible to shorten the distance between the island 108 and a part of the base substrate 101 or between the island 108 and the base substrate 101 to separate the island 108 from the base substrate 101 . The time until a portion of the layer is removed.

Figure ID is a top view corresponding to Figure 1C. The fixed layer 110 functions to leave the island 108 above the base material substrate 101 so that the position of the island 108 on at least the base material substrate 101 immediately below does not change. The fixed layer 110 is a thin film layer including a material having etching resistance with respect to an etching means used to etch the region 106 to be removed.

As the material _of the fixed layer 110, _for example, _an oxide film (such as _{SixOy , SixOyNz} , _{AlxOy , AlxOyNz ,} etc. ₎ , or a nitride film (such as _SixNy , Al _x N _y, etc.) and other inorganic insulating films. The inorganic insulating film may be a single layer or a laminate of different materials. For example, chemical vapor deposition (Chemical Vapor Deposition, CVD) is used to form an inorganic insulating film, and a part of the inorganic insulating film is removed by standard photolithography and etching processes, thereby forming the desired fixed layer 110 . When forming the fixed layer 110, as long as it has resistance to a predetermined etching method for etching the intended removal region 106, as the material of the fixed layer 110, an organic film (such as a photosensitive coating film, a photosensitive coating film, etc.) can also be used. Sexual organic sheets, etc.).

The thickness of the fixed layer 110 can be selected according to the size and thickness of the island 108 of the semiconductor thin film layer. The film thickness of the fixed layer 110 is, for example, thinner than the thickness of the island 108 of the semiconductor thin film layer (that is, the thickness of the semiconductor thin film layer 104 formed on the base substrate 101 ). The thickness of the fixed layer 110 is preferably a thickness obtained by bonding the pick-up substrate 200 as a third substrate described later to at least a part of the bonding region of the fixed layer 110 and the semiconductor thin film layer 104 along the surface of the base substrate 101. The force of moving the pick-up substrate 200 in the away direction cuts the thickness between the fixed layer 110 formed on the base substrate 101 and the fixed layer 110 formed on the side surface of the semiconductor thin film layer.

The island 108 of the semiconductor thin film layer shown in FIG. 1D has sides with lengths L1 and L2, and L1>L2. The fixed layer 110 has a first region covering the upper surface of the island 108 , a second region covering the right side of the island 108 , and a third region covering the left side of the island 108 . The fixed layer 110 further has a region covering the base substrate 101 before having the second region and the third region. In the example shown in FIG. 1D , the fixed layer 110 does not cover the side of the long side (that is, the side of the side whose length is L1) among the four sides of the island 108, and covers the side of the short side (that is, the side whose length is L2). part of the side).

Next, as shown in FIG. 1E , the void 103 is formed by removing a part of the island 108 or the base substrate 101 , or a part of the layer to be removed between the island 108 and the base substrate 101 . For example, the region of the island 108 connected to at least the base substrate 101 directly below is etched away to form the void 103 between the island 108 and the base substrate 101 at least in the region directly below the island 108 . When forming the void 103 , it is desirable to use an etching liquid or an etching gas whose etching rate of the island 108 is at least lower than that of the region 106 to be removed with respect to the etching liquid or etching gas used.

In the etching step, for example, in the case where the etching of the region layer to be removed isotropically proceeds and the etching rate is not affected by the direction, the etching distance in the direction perpendicular to the long side of the island 108 is short compared to Etching in the direction perpendicular to the short side ends early. Therefore, by opening the sides of the long sides, or by forming the fixed layer 110 in such a manner that the coverage of the fixed layer 110 on the long side becomes smaller compared with the coverage of the fixed layer 110 on the short sides, faster The etch ends to form voids 103 . In this way, the risk of etching damage in the island 108 can be reduced during the etching step for removing the intended removal region 106 .

Furthermore, in the above description, the case where the void 103 is formed by removing the intended removal layer 102 by etching has been exemplified, but it is also possible to use anisotropic etching without forming the intended removal layer 102 to form the void 103 . The surface area of the substrate 101 is removed to form voids.

In the case where the void is formed by removing a region of the surface of the base material substrate 101 by anisotropic etching, in the step of forming the pinned layer, it is preferable to set the two sides in the direction in which the etching rate is high as the second. 2 directions. Both side surfaces in the second direction may be entirely exposed, or a part of the area may be covered by the fixing layer 110 . Furthermore, it is preferable that the fixed layer 110 extending in the second direction has a higher coverage rate on both sides of the semiconductor thin film layer 104 in the first direction than the fixed layer 110 extending in the first direction. The fixed layer 110 is formed so that the coverage of both side surfaces in the second direction of the semiconductor thin film layer 104 becomes small. In this manner, the void 103 can be easily formed by performing etching.

In addition, in the above description, the case where the island 108 of the semiconductor thin film layer is a rectangle was exemplified, but the island 108 may be a square in the following cases. 1) The case where the semiconductor thin film layer is separated from the base substrate by removing the planned removal layer 102 by etching 2) When using anisotropic etching for removing the surface area of the base substrate 101 3) When the size of the island 108 is very small (eg, 20 μm or less)

[Step of separating the islands 108 of the semiconductor thin film layer] FIG. 2A is a diagram showing a pick-up substrate 200 as a third substrate for separating the islands 108 of the semiconductor thin film layer from the base substrate 101 . Fig. 2B is the section A-A of Fig. 2A. As shown in FIG. 2B , the pick-up substrate 200 has a base substrate 201 and pick-up bumps 202 formed on the base substrate 201 including an organic material. As the base substrate 201 , for example, a transparent substrate such as quartz, sapphire, or glass; a semiconductor substrate such as Si; a ceramic substrate; or a metal substrate can be selected. The base substrate 201 can be a single material or a laminated material. In addition, the base substrate 201 may also be a substrate whose surface is coated with other materials.

The pickup bump 202 is, for example, an organic material layer, and can be formed by coating a photosensitive organic material on the base substrate 201 and using standard photolithography processes. The organic material layer can be formed, for example, by coating on the pick-up base substrate by spin coating or dipping, or by attaching an organic material film to the pick-up base substrate.

The structure of the picked-up substrate can be variously modified depending on the shape or size of the picked-up island 108 . For example, the pick-up substrate may have other structures interposed between the base substrate 201 and the pick-up bump 202 . In addition, the pickup substrate may not have the pickup bump 202 corresponding to the shape of the island 108 to be separated from the base substrate 101 like the pickup substrate 200' shown in FIG. 2C , but may have a larger area than the island 108. And the pickup layer 204 is flat.

3A to 3C are diagrams schematically showing steps of separating the island 108 from the base substrate 101 using the pick-up substrate 200 .

First, as shown in FIG. 3A , the position of the pickup bump 202 of the pickup substrate 200 is aligned with the island 108 . Specifically, the pick-up substrate 200 is arranged at a position where at least a partial area of the fixed layer 110 and the island 108 overlaps with at least a partial area of the pick-up bump 202 .

Next, as shown in FIG. 3B , the pick-up bump 202 is contacted or pressed against at least a part of the fixed layer 110 and the island 108 . Thereby, the pick-up bump 202 is connected to at least a part of the fixed layer 110 and the island 108 . When the pick-up substrate 200 is brought into contact with the fixed layer 110 and the island 108 in the state where the gap 103 is formed between the island 108 and the base substrate 101, and a force is applied downward, the area near the boundary line between the island 108 and the gap 103 (Fig. 3B), a crack occurs in the fixed layer 110 or the fixed layer 110 breaks.

In the state where a crack is generated in the fixed layer 110 or the fixed layer 110 is broken, as shown in FIG. 3C , the fixed layer 110 is separated by lifting the pick-up substrate 200 in the state of being connected to a part of the fixed layer 110. A fixed layer 114 in contact with the island 108 and a fixed layer 112 in contact with the base substrate 101 are formed, so that the island 108 of the semiconductor thin film layer and the fixed layer 114 as a part of the fixed layer 110 can be separated from the base substrate 101. separate.

Furthermore, the island 108 may be separated from the base substrate 101 in a state where the surface of the island 108 separated from the base substrate 101 is accompanied by a semiconductor layer of a material different from that of the semiconductor thin film layer 104 on the base substrate 101 side. . For example, the island 108 separated from the base substrate 101 may be accompanied by a mask film or a dielectric layer provided on the base substrate 101 for selectively growing or laterally growing the semiconductor thin film layer 104 .

[Step of bonding the island 108 of the semiconductor thin film layer to another substrate] 3D to 3F are diagrams schematically showing steps up to bonding the separated islands 108 to the transfer destination substrate 301 . As shown in FIG. 3D , the structure 210 in which the island 108 and the fixed layer 114 are connected to the pick-up substrate 200 is positioned at a predetermined position above the moving destination substrate 301 which is the second substrate.

Thereafter, as shown in FIG. 3E , the surface 308 of the island 108 under the fixed layer 114 in the structure 210 is pressure-bonded to the destination substrate 301 , thereby bonding the island 108 to the destination substrate 301 . Before the step of pressure-bonding the island 108 to the destination substrate 301 , surface treatment may be appropriately performed on the bonded surfaces (the surface 308 of the island 108 of the semiconductor thin film layer and the surface 302 of the destination substrate 301 ).

Next, as shown in FIG. 3F , the pick-up bump 202 and the base substrate 201 are removed from the fixed layer 114 . For example, the fixed layer 114 can be separated from the base substrate 201 by immersing in a chemical solution such as an organic solvent that dissolves the organic material constituting the pickup bump 202 to dissolve the pickup bump 202 .

Furthermore, in the step of press-bonding the island 108 to the transfer destination substrate 301, if the bond between the transfer destination substrate 301 and the island 108 is firm, the pick-up bump 202 may be dissolved with a chemical solution such as an organic solvent. The pick substrate 200 was previously lifted. In this case, after lifting up the pick-up substrate 200, a step of cleaning the destination substrate 301 to which the island 108 is bonded with a chemical solution such as an organic solvent may be added.

Furthermore, in the island 108 bonded to the moving destination substrate 301 , a predetermined device structure or a part of the device structure may also be formed before the step of forming the fixed layer 110 . In addition, after the island 108 is bonded to the moving destination substrate 301 , the fixed layer 110 can be processed, or an interlayer insulating film can be formed on the semiconductor thin film layer, or a wiring structure for electrical connection with external structures can be formed.

In addition, in the above description, the island 108 is bonded to the surface of the destination substrate 301, but other layers (inorganic material thin film layer or organic material thin film layer, etc.) may be provided between the destination substrate 301 and the island 108. . In addition, a heat treatment step may be provided after the bonding step.

In addition, when the island 108 separated from the base substrate 101 is bonded to the transfer destination substrate 301, the surface of the island 108 bonded to the transfer destination substrate 301 may be accompanied by a semiconductor thin film layer. 104 The semiconductor layers of different materials are bonded to the transfer destination substrate 301 in the state. For example, the island 108 may be bonded to the transfer destination substrate 301 with a mask film or dielectric layer provided on the base substrate 101 for selective growth or lateral growth of the semiconductor thin film layer 104 .

[Method of moving a plurality of islands 108] In the above description, the method of moving the island 108 of one semiconductor thin film layer has been described, but in the manufacturing method of the semiconductor element of this embodiment, it is also possible to move a plurality of semiconductor thin film layers as shown in FIGS. 4A to 4E . islands 408a, 408b, 408c. In the case of separating a plurality of islands 408a, 408b, 408c from the base substrate 401 in batches, a pickup substrate 420 including a plurality of pickup bumps 422a, 422b, 422c corresponding to the plurality of islands 408a, 408b, 408c is prepared. . Then, the pick-up substrate 420 is brought into contact or pressure-bonded to the fixed layers 410a, 410b, 410c and the islands 408a, 408b, 408c by the same steps as those described above, and the plurality of islands 408a, 408b, 408c are removed from the base substrate 401. The islands 408 a , 408 b , and 408 c are separated and bonded to the destination substrate 451 .

4A to 4E are diagrams schematically showing steps of moving the plurality of islands 408a, 408b, and 408c. In FIGS. 4A to 4E , a base substrate 401, a plurality of voids 403a, 403b, 403c, a plurality of islands 408a, 408b, 408c, a plurality of fixed layers 410a, 410b, 410c, a plurality of fixed layers 414a, 414b, 414c , a plurality of fixed layers 416a, 416b, 416c, a pick-up substrate 420, a base substrate 421, a plurality of pick-up bumps 422a, 422b, 422c, a structure 430, and a moving destination substrate 451 are respectively the same as the parent substrate in FIGS. 3A-3F 101 , void 103 , island 108 , pinned layer 110 , pinned layer 114 , pinned layer 112 , pick up substrate 200 , base substrate 201 , pick up bump 202 , structure 210 and move destination substrate 301 correspond. In the case of separating the plurality of islands 408a, 408b, 408c from the parent substrate 401, a pick-up substrate without pick-up bumps and including a pick-up layer comprising an organic material as shown in FIG. 2C may also be used.

[Movement of Multiple Semiconductor Thin Film Layers] 5A to 5E are diagrams for explaining a method of moving islands of a plurality of semiconductor thin film layers. In FIGS. 5A to 5E , a base substrate 501, a plurality of voids 503a, 503b, 503c, a plurality of islands 508a, 508b, 508c, a plurality of fixed layers 510a, 510b, 510c, a plurality of fixed layers 514a, 514c, multiple A fixed layer 516a, 516c, a pick-up substrate 520, a base substrate 521, a plurality of pick-up bumps 522a, 522c, a structure 530, a moving destination substrate 531, and a surface 551 are respectively related to the parent substrate 101, the gap in FIGS. 103 , island 108 , fixed layer 110 , fixed layer 114 , fixed layer 112 , pick substrate 200 , base substrate 201 , pick bump 202 , structure 210 , move destination substrate 301 , and surface 302 correspond. Hereinafter, a method of selecting some of the islands of the plurality of semiconductor thin film layers formed on the base substrate and moving them to the destination substrate will be described.

As shown in FIG. 5A , after forming voids 503a to 503c at least directly below the islands of the semiconductor thin film layer, the base substrate of the pick-up substrate 520 is picked up only at positions corresponding to the islands 508a and 508c of the selected semiconductor thin film layer. Pick-up bumps 522 a and pick-up bumps 522 c of organic materials are disposed on 521 . Then, the pick-up bump 522a and the pick-up bump 522c are brought into contact with or pressed against the islands 508a and 508c, thereby connecting the pick-up substrate 520 to the selected islands 508a and 508c. Fig. 5B is a top view of Fig. 5A, and the section A-A of Fig. 5B corresponds to Fig. 5A.

Next, as shown in FIG. 5C , only the selected islands 508 a and 508 c are separated from the base substrate 501 by lifting the pick-up substrate 520 connecting the selected islands 508 a and 508 c . FIG. 5C is a diagram showing a state where the selected islands 508 a and 508 c are lifted up by picking up the substrate 520 . As shown in FIG. 5C , unselected islands 508 b remain on the base substrate 501 .

Next, as shown in FIG. 5D , the structure (the structure 530 shown in FIG. 5C ) in which the island 508a, the island 508c, the fixed layer 514a, and the fixed layer 514c are connected on the pick-up substrate 520 is arranged at a predetermined position on the moving destination substrate 531. . Next, the surfaces 558a and 558c of the islands 508a and 508c that are opposite to the fixed layer 514a and the fixed layer 514c are pressure-bonded to the surface 551 of the moving destination substrate 531, thereby joining the selected islands 508a and 508c. on the moving destination substrate 531 .

Next, the pick-up bump 522a, the pick-up bump 522c, and the base substrate 521 are removed from the moving destination substrate 531, whereby the island 508a and the island 508a to which the semiconductor thin film layer is bonded on the moving destination substrate 531 as shown in FIG. 5E can be manufactured. The semiconductor elements of island 508c.

[Flow of Steps of Manufacturing Method of Semiconductor Element] FIG. 6 is a diagram showing a flow of steps in the method of manufacturing a semiconductor element according to the present embodiment. As shown in FIG. 6, in the method of manufacturing a semiconductor device according to this embodiment, it is possible to use pick-up bumps made of organic materials corresponding to islands 508a and 508c of predetermined selected semiconductor thin film layers on the base substrate 501. 522 picks up the substrate 520, separates the selected islands 508a and 508c from the parent substrate 501, and bonds them to the destination substrate 531. In this manner, desired islands 508 a , 508 c can be selected from among the plurality of islands 508 a , 508 b , 508 c on the base substrate 501 and bonded to the destination substrate 531 .

It is obvious that various modifications can be made regarding the separation pattern for separating desired islands 508 a , 508 c from among the plurality of islands 508 a , 508 b , 508 c on the base substrate 501 from the base substrate 501 .

[Effects brought about by the method of manufacturing a semiconductor device according to the present embodiment] According to the manufacturing method of the semiconductor device described above, using the pick-up substrate 200 including the pick-up bumps 202 formed on the base substrate 201 by photolithography and using an organic material, the bumps fixed to the base material by the fixing layer 110 are used. The island 108 of the semiconductor thin film layer on the substrate 101 is separated from the base substrate 101 , and the island 108 of the semiconductor thin film layer connected to the pickup substrate 200 is pressure-bonded to the transfer destination substrate 301 . In this manner, the semiconductor thin film layer 104 separated from the base substrate 101 can be easily moved to another substrate.

In addition, it is obvious to those skilled in the art that the pick-up substrate 200 including pick-up bumps 202 having an optimum shape and size corresponding to the islands 108 of the semiconductor thin film layer separated from the base substrate 101 can be easily fabricated. According to the manufacturing method of the semiconductor element of this embodiment, the island 108 of the semiconductor thin film layer can be separated from the base material substrate 101 and bonded to the destination substrate 301 using the pick-up substrate 200 that can be easily fabricated, so it can be realized at low cost. Movement of the island 108 of the semiconductor thin film layer.

Furthermore, after the island 108 of the semiconductor thin film layer is bonded to the destination substrate 301, the pick-up bump 202 comprising an organic material and the base substrate 201 of the pick-up substrate 200 are removed from the destination substrate 301. The effect of repeatedly reusing the base substrate 201 .

In addition, as described above, when the fixed layer 110 extending in the longitudinal direction of the island 108 is formed, the following effects are produced.

(1) When an etching solution or an etching gas is used in the step of forming a gap between the island 108 of the semiconductor thin film layer and the base substrate 101, the surface of the semiconductor thin film, the electrodes formed on the island 108 of the semiconductor thin film layer, and the Component structure such as wiring.

(2) In the step of forming the gap between the island 108 of the semiconductor thin film layer and the base substrate 101 and then bonding to the destination substrate 301, the stress applied to the island 108 of the semiconductor thin film layer can be reduced. The warpage amount of the island 108 of the semiconductor thin film layer. If the warpage of the islands 108 of the semiconductor thin film layer is reduced by adjusting so as to reduce the stress in this way, it will be easy to hold on the base substrate 101 by the fixing layer 110 even in the state where a void is formed. The island 108 of the semiconductor thin film layer. As a result, separation of the islands 108 of the semiconductor thin film layer by the pick-up substrate 200 is easily performed, and in the bonding step on the transfer destination substrate 301, it is easy to hold the islands 108 of the semiconductor thin film layer on the transfer destination substrate 301 superior.

(3) In the element forming step after bonding on the moving destination substrate 301 , the fixed layer 110 can be used as an interlayer insulating film layer between the wiring layer and the semiconductor thin film layer, or the like.

(4) In the case where a wiring layer is formed on the fixed layer 110 in the element forming step after being bonded to the moving destination substrate 301, it is possible to prevent the disconnection of the wiring layer at the level difference that exists when the fixed layer 110 is discontinuous. Wire.

(5) It is easy to ensure the uniformity of the characteristics of the semiconductor element formed using the island 108 bonded to the semiconductor thin film layer on the movement destination substrate 301 . Since the surface of the island 108 of the semiconductor thin film layer is covered by the continuous fixed layer 110, for example, the intensity distribution of the light emitted from the upper surface of the light-emitting element becomes uniform. In the case of covering with a discontinuous fixed layer 110 , the light intensity changes in the discontinuous region of the fixed layer 110 .

In addition, in the above description, the shape of the semiconductor thin film layer has been described as a rectangular shape, but other than the rectangular shape, it may be circular or have a complicated shape. In addition, in the above description, a simple semiconductor thin film layer not having an element structure was exemplified (illustrated), but the semiconductor thin film layer may also have an element structure. In addition, the surface of the semiconductor thin film layer can also be uneven and include a thin film structure of dielectric material or metal material corresponding to the device structure.

[Modification of the method of manufacturing a semiconductor element] 7A to 7D are examples of modifications of the method of manufacturing a semiconductor element. In FIGS. 7A to 7D , base material substrate 701, multiple voids 703a, 703b, 703c, 703d, multiple islands 708a, 708b, 708c, 708d, 718a, 718b, multiple fixed layers 705a, 705b, 705c, 705d , a plurality of fixed layers 714a, 714b, a pick-up substrate 710, a base substrate 711, a pick-up layer 712, and a destination substrate 731 are respectively fixed to the parent substrate 101, the void 103, the island 108, The layer 110, the fixed layer 114, the pickup substrate 200, the base substrate 201, the pickup layer 204, and the movement destination substrate 301 correspond. As shown in FIGS. 7A and 7B (FIG. 7B is a cross-sectional view of A-A of FIG. 7A), islands of multiple semiconductor thin film layers on the base substrate 701 (such as island 708a, island 708b, island 708c, island 708d, Among the islands 718 a and 718 b ), a predetermined part of the islands is separated from the base material substrate. In addition, as shown in FIG. 7C and FIG. 7D (FIG. 7D is a cross-sectional view of A-A in FIG. 7C), the islands (708a, 708b, 718a, and 718b in FIG. 7C) separated from the base substrate 701 can be well bonded to the Predetermined positions on the moving destination substrate 731 where other components are mounted in a part of the area (the component etc. mounting area 742 and the component etc. mounting area 744 in FIG. 7C ).

[Sequence of making composite material components] 8A to 8C are diagrams showing the structure of a semiconductor element 800 manufactured using the above semiconductor element manufacturing method. The semiconductor element 800 is a composite material element manufactured by the manufacturing method. The semiconductor element 800 can be manufactured by separating the island 808 of the semiconductor thin film layer on which the device structure is formed on the base substrate 801 from the base substrate 801, bonding it to the moving destination substrate 831, and forming an island 808 connected to the outside of the semiconductor thin film layer. wiring. The example shown here is an example, and it is applicable to semiconductor elements of various types, materials, and structures.

FIG. 8A shows a cross-sectional structure of a semiconductor element 800 . In FIG. 8A, an island 808 of a semiconductor thin film layer; an electrode 822 and an electrode 824 formed on the island 808; a fixed layer 814 including openings 816a, 816b at electrode positions; an interlayer insulating film 842, a wiring layer 854, and wiring Layer 856.

When manufacturing the semiconductor element 800, after forming the semiconductor thin film layer for forming a predetermined element on the base substrate, the electrode 822 and the electrode 824 are formed, or the island 808 of the semiconductor thin film layer is divided (element separation), whereby Form the element structure. Thereafter, a fixed layer 814 is formed as shown in FIG. 8B. Furthermore, a gap 803 is formed at least between the base substrate 801 and the island 808 . In forming the void 803, it is formed by etching and removing the region to be removed.

Thereafter, the island 808 is separated from the base substrate 801 after a pickup substrate including a pickup bump or a pickup layer made of an organic material is bonded to a part of the island 808 and the fixed layer 814 . Thereafter, bonding is performed at a predetermined position on the moving destination substrate 831 . For example, the destination substrate 831 may be made of a material different from that of the base substrate 801 or the island 808 . Before bonding, surface treatment for bonding may be performed on the surfaces to be bonded (the bonding surface of the island and the surface of the moving destination substrate) as needed. Although not shown, other thin film layers may be provided between the destination substrate 831 and the island 808 .

After the island 808 is bonded to the movement destination substrate 831 , as shown in FIG. 8C , openings are formed at the positions of the electrodes 822 and 824 on the island 808 in the fixed layer 814 serving as an insulating film. Thereafter, interlayer insulating film 842 for wiring formation is formed, and wiring layer 854 and wiring layer 856 are formed as shown in FIG. 8A, and wiring layer 854 and wiring layer 856 are bonded to electrode 822 and electrode 824, respectively. In this way, the fabrication of the semiconductor element 800 in which the fixed layer 814 extends on the upper surface of the island 808 and on both side surfaces of the island 808 in the first direction is completed.

As described above, according to the method of manufacturing a semiconductor element of this embodiment, the islands formed on the base substrate including the semiconductor thin film layer of the element can be separated from the base substrate satisfactorily and bonded to the transfer destination substrate satisfactorily. , so that composite material components with high performance and high reliability can be obtained. Various forms such as the size and structure of the semiconductor thin film layer included in the semiconductor element can be applied to the above-described manufacturing method. The pick-up bumps containing organic materials included in the pick-up substrate are produced by, for example, standard photolithography, so it can correspond to various changes in the device structure and the shape of the semiconductor thin film layer, as well as various changes in the shape of the moving destination substrate. And it is easy to prepare the most suitable pick-up substrate. Thus, according to the method of manufacturing a semiconductor element of this embodiment, separation of an optimum semiconductor thin film layer from a base substrate and bonding to a transfer destination substrate can be easily realized.

[Modification of the shape of the fixed layer 110] 9A to 9D are diagrams showing modified examples of the shape of the fixing layer 110 . As shown in FIG. 9A, the width L2b of the fixed layer 110 provided on the base substrate 101 and the side surface of the island 108 covering the semiconductor thin film layer can be made wider than the width L2b of the fixed layer covering the upper surface of the island 108. L2a is narrow. In this manner, when the island 108 is detached from the base substrate 101 by picking up the substrate 200 , the fixing layer 110 provided on the base substrate 101 and the fixing layer 110 provided on the island 108 are easily separated.

In this case, as shown in FIG. 9B , in the form of the composite material element bonded to the moving destination substrate 301, the width L2b of the fixing layer 114 on the short side of the island 108 covering the semiconductor thin film layer is also larger than that of the semiconductor thin film covering layer. The width L2a of the fixed layer 114 on the upper surface of the island of layers 108 is narrow.

In addition, as shown in FIG. 9C , in the long side region of the fixed layer 110 of the island 108 covered with the semiconductor thin film layer, a part of the side surface of the long side of the island 108 covered with the semiconductor thin film layer may be provided and extend toward the base substrate 101. area 130 of existence. At this time, it is preferable that the coverage rate of the fixed layer 110 on the side surfaces of the long sides is smaller than the coverage rate of the short sides. In this case, as shown in FIG. 9D , in a state in which the island 108 of the semiconductor thin film layer is bonded to the destination substrate 301 , a fixing member is formed to cover a part of the long sides of the island 108 of the semiconductor thin film layer. The state of region 131 of layer 110. In this state, the coverage rate of the fixed layer 110 on the side surfaces of the long sides is smaller than the coverage rate of the short sides.

[Reduction of Lattice Defects in Semiconductor Thin Film Layer 104] In the process of forming a GaN epitaxial layer on a Si wafer, sometimes due to the lattice mismatch between the material of the base substrate 101 and the material of the semiconductor thin film layer, and the difference between the material of the base substrate 101 and the material of the semiconductor thin film layer, The mismatch of thermal expansion coefficients (difference in thermal expansion coefficients) introduces crystal defects into the semiconductor thin film layer 104 .

In order to solve such a problem, a material of the same system as that of the semiconductor thin film layer can be used as the base substrate 101 . In this case, it is difficult to separate the semiconductor thin film layer from the base substrate 101 by etching. Therefore, a layer that is compatible with the materials of the base substrate 101 and the semiconductor thin film layer 104 may be provided between the base substrate 101 and the semiconductor thin film layer 104. A semiconductor wafer having a dissimilar material layer with a large difference in etching rate is used as the first substrate. In addition, a semiconductor wafer in which a dissimilar material layer made of a material having a different lattice constant and a thermal expansion coefficient is provided between the base substrate 101 and the semiconductor thin film layer 104 may be used as the first substrate. As a material of the dissimilar material layer, for example, Si can be used. In this case, it is preferable to set the upper limit of the thickness of the dissimilar material layer provided between the base substrate 101 and the semiconductor thin film layer 104 to be the same as the thickness of the semiconductor thin film layer 104 .

The difference in lattice constant between the base substrate 101 and the semiconductor thin film layer 104 is, for example, smaller than the difference in lattice constant between the semiconductor thin film layer 104 and the dissimilar material layer. In addition, the difference in thermal expansion coefficient between the base material substrate 101 and the semiconductor thin film layer 104 is, for example, smaller than the difference in thermal expansion coefficient between the semiconductor thin film layer 104 and the dissimilar material layer.

When the base substrate 101 is, for example, a GaN substrate, the dissimilar material layer is formed of, for example, Si(111), and the semiconductor thin film layer 104 is formed of, for example, GaN, the thermal expansion coefficient of GaN is 2.59 ppm smaller than that of Si(111) which is 5.59 ppm. Therefore, the stress of warping on the lower side (stress in the direction projecting to the upper side) may be generated in the base material substrate 101, and the stress of warping on the upper side may be generated in the semiconductor thin film layer 104 contrary to the base material substrate 101 ( Stress in the direction of protrusion to the lower side). In this way, by generating stress in opposite directions in the base substrate 101 and the semiconductor thin film layer 104 , the base substrate 101 and the semiconductor thin film layer 104 are less likely to warp.

Furthermore, by setting the upper limit of the thickness of the dissimilar material layer provided between the base substrate 101 and the semiconductor thin film layer 104 to be the same as that of the semiconductor thin film layer 104, even the dissimilar material layer provided between the base substrate 101 and the semiconductor thin film layer 104 The thermal expansion coefficient of the dissimilar material layer is different from that of the semiconductor thin film layer 104, but the thermal stress of the substrate (laminated structure of the base substrate 101 and the thin dissimilar material layer) affects the semiconductor thin film layer 104 differently from that of the semiconductor thin film layer 104. The influence of the base substrate 101 with a small difference in thermal expansion coefficient is dominant. Therefore, the influence of the thermal stress on the semiconductor thin film layer 104 by the foreign material layer can be suppressed to be small. As a result, lattice defects in the semiconductor thin film layer 104 can be reduced.

In addition, the etching rate of the dissimilar material layer by a predetermined etching method is higher than the etching rate of the base substrate 101 and the semiconductor thin film layer 104 by a predetermined etching method. In this way, the semiconductor thin film layer 104 with few lattice defects can be formed, and the void 103 can be efficiently formed by using a different material layer to form the planned removal region 106 shown in FIG. 1C.

[Modification of the material of the moving destination substrate 301 ] When the wafer size of the semiconductor element is large, the following problems will arise: due to the heat conduction characteristics of the substrate material that is the base of the semiconductor element wafer, heat distribution occurs in the wafer. When the semiconductor element wafer operates, in the central area of the wafer, the wafer temperature rise is large. In particular, when the thermal conductivity of the substrate serving as the base of the semiconductor element wafer is low, the problem of large temperature distribution arises.

Therefore, as the material of the moving destination substrate 301 , a material having a thermal conductivity higher than that of the base substrate 101 can be selected. As the destination substrate 301, for example, ceramic substrates such as SiC, AlN, and SiN; metal substrates such as Cu or Al; composite metal materials or metal material layers composed of various metals such as W, Cr, Cu, and Mo, etc. can be used. Composite material substrates or laminated material substrates with ceramic materials; substrates of materials containing carbon, etc. By making the thermal conductivity of the moving destination substrate 301 higher than that of the base substrate 101 , it is possible to manufacture a semiconductor element that can easily dissipate heat.

By dividing the semiconductor thin film layer into a plurality of islands and connecting the plurality of element elements formed on the divided islands to each other, the heat dissipation of the element elements can be improved, so that the heat dissipation of the element elements can be suppressed. The temperature of the semiconductor element rises. In particular, by using a material with high thermal conductivity as the moving destination substrate 301 , it is possible to suppress the temperature rise of each element element even during an operation in which a large current flows.

When manufacturing an aggregated semiconductor element composed of a plurality of element elements, a plurality of islands 108 formed in the semiconductor thin film layer of the base substrate 101 can be simultaneously moved to the transfer destination substrate 301 . By forming electrodes on the plurality of islands 108 moved to the moving destination substrate 301 or forming a wiring pattern connecting at least any one of the plurality of islands 108 , it is possible to manufacture a collective semiconductor element in which a plurality of element elements operate in conjunction.

[Optimization of crystal orientation] FIG. 10 is a diagram schematically illustrating a semiconductor epitaxial wafer used as a base substrate 101 . In FIG. 10 , islands 108 of a plurality of group III nitride semiconductor thin film layers formed on a Si substrate as a base substrate 101 are shown. In order to remove the island 108 of the Group III nitride semiconductor thin film layer from the base substrate 101 in a good state, the direction of the side of the island 108 is preferably <112> relative to the Si (111) substrate serving as the base substrate 101 The direction is an angle range of ±45° or less. The direction of the long side of the island 108 is preferably the <112> direction of the Si (111) substrate as the base substrate 101 .

Si(111) exhibits anisotropic etching properties with respect to a specific etchant. By using the anisotropic etching characteristics of Si (111), it is not necessary to etch and remove the entire wafer, and by removing the surface area of Si (111) by etching, epitaxy can be performed on Si (111) The grown semiconductor thin film layer is separated from Si(111). Conventionally, when Si (111) was used as the base substrate 101 , the preferred direction of the direction of the islands 108 of the semiconductor thin film layer formed by epitaxial growth on the base substrate 101 was not known. On the other hand, the inventors found that it is preferable to set the direction of one side (for example, the longer side) of the island 108 within an angle range of ±45° or less with respect to the <112> direction of the Si substrate. In particular, the inventors found that it is more preferable to make the direction of the long side of the island 108 substantially parallel to the <112> direction of the Si substrate.

In addition, the inventors have found that, in the case where the island 108 of the semiconductor thin film layer is formed from a hexagonal crystal, it is preferable to set the direction of the long side of the island 108 of the semiconductor thin film layer relative to the single crystal of a group III nitride semiconductor such as GaN. The <1-100> direction of the general hexagonal crystal material becomes the angle range of ±45° or less. In particular, the inventors found that it is more preferable to set the direction of the long side of the island 108 of the semiconductor thin film layer approximately parallel to the <1-100> direction of the hexagonal crystal material.

As shown in FIG. 10, island 108 has sides of length L3 and sides of length L4. In the following description, the case of a rectangle whose side length L3 is longer than the side length L4 is exemplified, but in the case of L3=L4 (that is, when the island 108 is a square), any side is set as the long side and The present invention is also applicable.

When the island 108 is a rectangle, it is preferable to form the island 108 so that the side (the longer side) having the length of L3 is substantially parallel to the <112> direction of the Si (111) substrate. Here, the term “approximately parallel” means parallel within a certain range of error or deviation, and does not deviate extremely greatly from parallel (for example, within ±10° relative to parallel).

If the group III nitride semiconductor thin film layer on the C plane ((0001) plane) is crystallized and grown on a Si (111) substrate, the <112> direction of Si and the crystallographic direction of the group III nitride semiconductor thin film layer <1- 100 > direction parallel. In this case, it is preferable to form the island 108 so that the side of the island 108 whose length is L3 is substantially parallel to the <1-100> direction of the crystallization of the Group III nitride semiconductor epitaxial layer.

As already mentioned, various methods can be used as a method for forming the island 108. For example, by etching the semiconductor thin film layer obtained by crystal growth, the crystallization of the group III nitride semiconductor epitaxial layer in the direction of one side can be formed. The <1-100> direction is substantially parallel to the island 108 of the semiconductor thin film layer.

In addition, a mask layer with openings can also be formed on the base substrate 101 by an inorganic insulating film such as SiO ₂ , _Six N _{y ,} etc., and the semiconductor thin film layer is selectively grown in the opening area, thereby forming the longest part of the island 108 The island 108 of the semiconductor thin film layer whose edge direction is approximately parallel to the <112> direction of Si (111) or the <1-100> direction of the hexagonal crystal. In addition, the direction of the longest side of the island 108 and the <112> direction of Si (111) or the direction of the hexagonal crystal can also be formed by self-selectively growing the semiconductor thin film layer to carry out crystal growth on the mask layer in the lateral direction. The <1-100> direction is substantially parallel to the island 108 of the semiconductor thin film layer. The island 108 of the semiconductor thin film layer obtained by crystal growth on the mask layer has fewer defects than the semiconductor thin film layer obtained by crystal growth in a region other than the mask layer, and a high-quality crystal growth region can be obtained.

According to the verification experiment conducted by the inventors, in the case where the long side (the side of the length of L3) of the island 108 of the semiconductor thin film layer is approximately parallel to the <110> direction of the Si (111) substrate (the rectangle shown in FIG. 10 When the island 108 is rotated by 90°), the etching of the Si (111) substrate surface directly below the element region does not proceed, and the etching removal of the Si substrate surface over the entire surface directly below the island 108 cannot be performed. As a result, the island 108 cannot be detached from the Si (111) substrate serving as the base substrate 101 in a good state.

Figures 11A and 11B are obtained by the inventors through experimental investigations, showing the relationship between the direction of the long side of the island 108 of the semiconductor thin film layer and the <112> direction of Si (111) or the <1-100> direction of the hexagonal crystal. The graph of the relationship between the angle θ of , and the etching rate of the Si (111) substrate surface region in the direction perpendicular to the long side of the island 108 of the semiconductor thin film layer. The vertical axis of FIG. 11A shows the value obtained by dividing the etching rate when θ=0°, 45°, and 90° by the etching rate when 0°. FIG. 11B is a diagram for explaining the angle θ.

As shown in FIG. 11A , when θ exceeds 45° and tends to 90°, the etching rate with respect to the direction perpendicular to the long side decreases significantly. As shown in FIG. 11A and FIG. 11B , in order to allow the etching between the island 108 and the Si (111) substrate to progress favorably, a void is formed between the island 108 and the Si (111) substrate in the entire area directly under the island 108 Ideally, the angle θ formed by the direction of the long side of the island 108 and the <112> direction of Si (111) or the <1-100> direction of the hexagonal crystal does not exceed at least 45°.

From this result, it can be confirmed that when the surface region of the Si (111) substrate is etched and removed over the entire surface immediately below the island 108, the Si substrate surface is etched and removed over the entire surface immediately below the island 108. Good condition Remove the island 108 from the Si(111) substrate, ideally set the angle between the direction of the long side (the side with length L1) of the rectangular shaped island 108 and the <112> direction of the Si(111) substrate Angle range below ±45°.

In the case where the semiconductor thin film layer is a hexagonal crystal like Group III nitride or SiC, it is desirable to make the direction of the long side (L3 in FIG. The angle θ formed by the directions of 1-100> is within an angle range of ±45° or less. Furthermore, the island 108 of the semiconductor thin film layer can also be a hexagonal material other than Group III nitride semiconductor or SiC, such as ZnO.

In the above description, the case where the island 108 of the semiconductor thin film layer is a rectangular shape has been described as an example. The direction is substantially parallel to the <112> direction of the Si (111) substrate (the direction of the longest side is substantially parallel to the <1-100> direction of the crystal of the semiconductor epitaxial layer).

FIG. 12 is a diagram showing islands 109 of hexagonal semiconductor thin film layers provided on a base material substrate 101 of a Si (111) substrate. The island 109 has sides with lengths L1, L2, and L3, and satisfies the relationship of L1>L2, L3. That is, the side with length L1 is the longest side. As shown in FIG. 12 , the side of the island 109 of the semiconductor thin film layer having the L1 length is substantially parallel to the <112> direction of Si (111). In this case, in the state where the island 109 of the semiconductor thin film layer made of hexagonal crystal is bonded to the destination substrate 301, the side (i.e. the longest side) of the L1 length of the island 109 of the semiconductor thin film layer and the < 1-100 > Directions roughly parallel.

Furthermore, the base substrate 101 may also be a silicon-on-insulator (SOI) substrate. In addition, it may be a substrate in which the base material substrate 101 and the semiconductor thin film layer are made of the same material. For example, when the semiconductor thin film layer is a III-nitride semiconductor, the base substrate 101 may be, for example, a GaN substrate provided with a Si(111) layer. In the case where the substrate provided with Si (111) on the GaN substrate is used as the base substrate 101, GaN may be an insulating substrate (semi-insulating substrate or high-resistance substrate), or a conductive substrate (doped with Substrates of impurities).

As another example, the base substrate 101 may be, for example, a substrate obtained by bonding an Si (111) layer wafer to a substrate containing an oxide material such as a quartz substrate or a sapphire substrate, a nitride material such as SiN or AlN, or a semiconductor material. .

(experimental example) 13A is a microscope photograph of islands of a GaN semiconductor thin film layer formed on a Si (111) substrate serving as a base substrate 101 . Fig. 13A is a microscope photo of the state after at least the surface region of the Si (111) substrate directly below the island of the semiconductor thin film layer is etched and removed, and the island of the semiconductor thin film layer is approximately in the <112> direction of the Si (111) There are long sides in a direction parallel or approximately parallel to the <1-100> direction of the GaN semiconductor thin film layer. A gap is formed between the island of the semiconductor thin film layer and the Si (111) substrate in at least a region directly below the island of the semiconductor thin film layer.

FIG. 13B is a microscope photograph of the islands of the GaN semiconductor thin film layer in which the direction of the long sides of the islands of the semiconductor thin film layer with respect to the crystallographic direction of the base substrate 101 is different from FIG. 13A . FIG. 13B shows the state after the step of etching at least the surface region of the Si(111) substrate immediately below the island of the semiconductor thin film layer at <112> with the Si(111) The direction is substantially vertical or has a long side in a direction substantially perpendicular to the <1-100> direction of the GaN semiconductor thin film layer. As shown in FIG. 13B , in at least the region immediately below the island of the semiconductor thin film layer, a region where no gap is formed between the island of the semiconductor thin film layer and the Si (111) substrate remains.

Furthermore, the etching time of the sample shown in FIG. 13B was about three times that of the sample shown in FIG. 13A . The color of the region indicated by (1) in FIG. 13B appears dark, and the region where the color appears dark is a region where voids are not formed. As shown in FIG. 13B, even if the sample shown in FIG. 13B is etched for a relatively long time, in the region directly below the island of the semiconductor thin film layer, there remains a gap between the island of the semiconductor thin film layer and the Si (111) substrate. Areas where voids are not formed.

The region indicated by (2) in FIG. 13B is the fixed layer. The region indicated by (3) in FIG. 13B is a semiconductor thin film layer. In the region indicated by (4) in FIG. 13B , it was confirmed that etching damage occurred in the islands of the semiconductor thin film layer.

As explained above, it has been confirmed by the experiment of the inventors that in order to form a hexagonal semiconductor thin film layer (such as GaN, InN, AlN, GaN/ _{AlxGa1 -xN} / _{InxGa1 -xN} , etc. stacked layer; the island of the semiconductor thin film layer of SiC, ZnO, etc.) is separated from the first substrate (Si (111) substrate) and in the entire area directly below the island of the hexagonal semiconductor thin film layer, the island of the semiconductor thin film layer To form a gap with the first substrate, it is ideal to make the direction of the long side of the island of the semiconductor thin film layer at least roughly parallel to the <112> direction of Si (111), or to align with the hexagonal (GaN epitaxial layer ) The direction of <1-100> is roughly parallel.

14 is a microscope photograph of a state where islands of semiconductor thin film layers whose long sides are substantially parallel to the <1-100> direction are bonded to a moving destination substrate 301 in an experiment conducted by the inventors. As shown in FIG. 14 , a part of the fixed layer 114 (the fixed layer covering the upper surface of the island of the semiconductor thin film layer and a part of the side surface of the short side) remains on the island of the semiconductor thin film layer.

In the microscope photograph shown in FIG. 14 , no interference fringe or color unevenness was observed in the islands of the semiconductor thin film layer bonded to the destination substrate 301, and it was confirmed that the islands of the semiconductor thin film layer were well bonded to the destination substrate. 301. It is considered that the reason why the islands of the semiconductor thin film layer can be bonded to the destination substrate 301 in a good state is that the islands of the semiconductor thin film layer whose <1-100> direction is substantially parallel to the direction of the long side of the island of the semiconductor thin film layer can be formed. , and between the island of the semiconductor thin film layer and the base material substrate 101, a void can be formed at least in the area directly below the island of the semiconductor thin film layer, and the surface of the semiconductor thin film layer facing the void is not damaged by the etching step. . The reason is considered to be that by separating the islands of the semiconductor thin film layer from the base substrate 101 in a state where a void is formed in the region directly below the islands of the semiconductor thin film layer, the islands of the semiconductor thin film layer can be separated from the base substrate 101 in a good state. 101 separation.

[Method of making the fixing layer 110 easy to break] 15A and 15B are diagrams for explaining a method of making the fixing layer 110 easy to break. As shown in FIG. 15A , in the etching step for forming a space between the island 108 of the semiconductor thin film layer and the base substrate 101 , the space 117 may be formed over a wider area than the space 103 shown in FIG. 1E . In the example shown in FIG. 15A , a gap 117 is formed between the fixing layer 110 and the base substrate 101 in a part of the region where the fixing layer 110 is formed on the base substrate 101 .

If a downward force is applied to the fixed layer 110 in this state, a large force will be added to the corner of the fixed layer 110 in the area where the gap 117 exists between the base material substrate 101 (the elliptical portion of the dotted line in FIG. 15A ). Stress, so cracks or fractures are likely to occur at the portion shown by the dotted line in FIG. 15B.

FIG. 16 is a microscope photograph showing the results of observing the separation state of the pinned layer 110 in an actual experiment. FIG. 16 is a microscope photograph obtained by observing the island 108 of the semiconductor thin film layer separated from the base substrate 101 from the back surface (surface to be joined). A portion indicated by A in FIG. 16 has a fixed layer 110 covering a part of the side surface of the island 108 of the semiconductor thin film layer. Fig. 16 is observed from the back side of the island of the semiconductor thin film layer, so it is difficult to observe the upper surface part of the fixed layer 110, but the fixed layer 110 of the width represented by the brackets near A in Fig. 16 is from the island 108 of the semiconductor thin film layer. The side a of the semiconductor thin film layer reaches the side b via the upper surface of the island 108 of the semiconductor thin film layer (the surface opposite to the surface observed in FIG. 16 ).

As shown in FIG. 16 , the fixed layer 110 extending from the side of the island 108 of the semiconductor thin film layer to the outside of the island 108 of the semiconductor thin film layer was not observed. In addition, the fixed layer 110 extending beyond the height of the back surface (the surface observed with a microscope) of the island 108 of the semiconductor thin film layer shown in FIG. 16 was not observed.

FIG. 17 is a microscope photograph of a state in which the semiconductor thin film layer island 108 separated from the base substrate shown in FIG. 16 is bonded to the destination substrate 301 . A part of the fixed layer 110 remains on the upper surface and side surfaces of the island 108 of the semiconductor thin film layer shown in FIG. 17 . As shown in FIG. 17 , the island 108 of the semiconductor thin film layer separated from the base substrate 101 can be satisfactorily bonded to the destination substrate 301 .

In the microscope observation photographs shown in FIGS. 16 and 17 , the position of the fixed layer provided on the island 108 of the semiconductor thin film layer is formed at a position slightly shifted upward from the center position of the island 108 of the semiconductor thin film layer, but relative to The position where the fixed layer 110 is formed on the island 108 of the semiconductor thin film layer can also be the center line of the island 108 of the semiconductor thin film layer, and can also be formed at a position offset from the center line. In addition, the position where the fixed layer 110 is formed may also be inclined relative to the center line of the island 108 .

In addition, the fixed layer 110 may have a region extending in the short-side direction corresponding to the second direction from at least a part of the region extending in the longitudinal direction corresponding to the first direction. 18A and 18B are diagrams showing examples of the fixed layer 110 having regions extending in the short-side direction. The fixed layer 110 shown in FIG. 18A has regions extending to both sides from the same position in the longitudinal direction of the fixed layer 110 . The fixed layer 110 shown in FIG. 18B has regions extending to both sides from different positions in the length direction of the fixed layer 110 .

[Formation of Step Structure in Semiconductor Thin Film Layer] In the case of forming the device structure in the semiconductor thin film layer, a step difference is formed in the semiconductor thin film layer according to the function of the device structure. 19A and 19B are diagrams schematically showing a state in which the semiconductor thin film layer formed on the base substrate 1001 is divided into islands of individual semiconductor thin film layers. FIG. 19A is a top view of the base substrate 1001 and islands of the semiconductor thin film layer, and FIG. 19B is a cross-sectional view. The island of the semiconductor thin film layer has a plurality of regions ( 1002 a , 1002 b ) with different heights.

In the step of etching and removing the surface of the base substrate 1001 on which the islands of the semiconductor thin film layer are formed to separate the islands of the semiconductor thin film layer from the base substrate, since the thickness of the region 1002b is smaller than the thickness of the region 1002a, the base material The periphery of the region 1002b in the substrate 1001 is also removed by etching. Since the alignment accuracy of the mask opening is not ±0 when the resist mask opening is formed before etching, misalignment occurs between the mask opening and the outer peripheral line of the island. Therefore, in order to secure a margin, it is necessary to position the outer circumference of the resist mask opening outside the outer circumference of the island. As a result, as shown in FIG. 19B , a groove 1003 is formed in a region around the region 1002b.

When the groove 1003 is formed, the area of the side surface of the surface region of the base substrate 1001 immediately below the region 1002b exposed in the region of the groove 1003 is larger than the area of the side surface of the surface region of the base substrate 1001 directly below the region 1002a. As a result, a part of the area of the base substrate 1001 (the area immediately below the region 1002 b ) whose side surface is in contact with the etchant is removed more rapidly by etching, and the base substrate directly below the region 1002 b is thus removed by etching. Step difference is generated in 1001. If there is a step directly below the island of the semiconductor thin film layer, when the island of the semiconductor thin film layer is pressed downward (in the direction of the base substrate), the island of the semiconductor thin film layer may be bent at an acute angle due to the step difference. Issues where cracks occur. Therefore, in order to solve such a problem, in the method of manufacturing a semiconductor element by separating the semiconductor thin film layer from the base substrate, it is preferable to form a step not exposed to the outer periphery of the semiconductor thin film layer in the step of forming the semiconductor thin film layer. poor structure.

20A to 20C are diagrams showing a semiconductor element including an island 920 of a semiconductor thin film layer having a step structure not exposed to the outer periphery of the island of the semiconductor thin film layer. 20A is a top view of a semiconductor element, FIG. 20B is a sectional view along line A-A, and FIG. 20C is a sectional view along line B-B. In FIGS. 20A to 20C, an island 920 of a semiconductor thin film layer is bonded to a moving destination substrate 931, and a region 921 of a p-type semiconductor layer exposed on the surface is formed in the island 920 of the semiconductor thin film layer. A concave region 922 having an n-type semiconductor layer and an outer peripheral wall 923 having a p-type semiconductor layer exposed on the surface.

21A to 21I are diagrams for explaining a method of manufacturing the semiconductor element shown in FIGS. 20A to 20C . Here, the light emitting diode (Light Emitting Diode, LED) structure is taken as an example for illustration, but this manufacturing method is not limited to the method of manufacturing semiconductor elements with an LED structure, and is applicable to the manufacture of semiconductor elements including various element structures Methods.

The base substrate 901 in FIG. 21A is a base substrate for epitaxially growing an LED semiconductor layer (for example, a stacked structure of Group III nitride semiconductor layers such as GaN), and is, for example, a Si substrate. The dotted line area in FIG. 21A is the area where the plurality of islands 920 of the semiconductor thin film layer are scheduled to be formed.

Fig. 21B is a sectional view taken along line A-A of Fig. 21A. As shown in Figure 21B, the island 920 of the semiconductor thin film layer has a region 921 where the p-type semiconductor layer is exposed on the surface, a region 922 where the p-type semiconductor layer is etched away to expose the n-type semiconductor layer on the surface, and a region 922 where the n-type semiconductor layer is exposed on the surface. The outer peripheral wall 923 of the p-type semiconductor layer.

As shown in FIG. 21C , the base substrate 901 is divided into islands 920 of individual semiconductor thin film layers. Next, pinning layer 928 is formed so as to bond at least part of the surface of p-type semiconductor layer exposed region 921 , n-type semiconductor layer exposed region 922 , and outer peripheral wall 923 to base substrate 901 . FIG. 21D is a cross-sectional view of the periphery of the island 920 formed by division, and shows a state where the fixing layer 928 bonding the island 920 and the base substrate 901 is formed. 21C shows six islands 920 of the semiconductor thin film layer, but the number, pitch, shape, size, etc. of the islands 920 of the semiconductor thin film layer can be appropriately designed. In the region 922 where the n-type semiconductor layer is exposed, the peripheral wall 923 is provided in such a manner that the step is not exposed to the outer periphery of the island 920 of the semiconductor thin film layer. In the region, no step reflecting the element structure included in the island 920 of the semiconductor thin film layer is formed.

In the step of forming the island 920 of the semiconductor film layer by etching the semiconductor film layer other than the predetermined region for forming the island 920 of the semiconductor film layer, standard photolithography and etching steps can be applied. Although not shown, after this step, electrode contacts may be formed in part of the surface of the region 921 where the p-type semiconductor layer is exposed and part of the surface of the region 922 where the n-type semiconductor layer is exposed. In the formation of the electrode contact, for example, a metal thin film layer capable of forming an ohmic contact is formed, and in order to form a low-resistance electrode contact, a sintering step of the electrode contact can be performed appropriately.

Next, as shown in FIG. 21E , on the surface of the base substrate 901 , at least the surface region of the base substrate 901 directly below the island 920 of the semiconductor thin film layer is removed by etching. In the step of etching and removing the surface region of the base substrate 901 immediately below the island 920 of the semiconductor thin film layer, it is desirable to use an etchant whose etching rate of the surface region of the base substrate 901 is faster than that of the semiconductor thin film layer. or etching gas. In this etching step, a gap (hatched area in FIG. 21E ) is formed between the island 920 of the semiconductor thin film layer and the base substrate 901 .

Next, as shown in FIG. 21F , the island 920 of the semiconductor thin film layer is separated from the first substrate. Although not shown, in this step, a structure (for example, the pick-up substrate) that temporarily adheres or adsorbs the islands of the semiconductor thin film layer can be used. In the example shown in FIG. 21F , after the island 920 is separated, a part of the fixed layer 928 remains on the base substrate 901 .

Next, as shown in FIG. 21G , the island 920 of the semiconductor thin film layer separated from the base substrate 901 is bonded to the transfer destination substrate 931 . In the step of bonding the island 920 of the semiconductor thin film layer to the destination substrate 931, the island 920 of the semiconductor thin film layer is pressure-bonded to the destination substrate 931 without using an adhesive. Before the step of bonding the island 920 of the semiconductor thin film layer to the destination substrate 931, a surface treatment step may be performed on the bonding surface of the island 920 of the semiconductor thin film layer and the surface of the destination substrate 931. Although not shown, other material layers may be provided between the island 920 of the semiconductor thin film layer and the moving destination substrate 931 (at least the area directly under the semiconductor thin film layer). In addition, in the step of bonding the island 920 of the semiconductor thin film layer to the transfer destination substrate 931, it is desirable not to use an adhesive for bonding, but a paste or a sheet containing an adhesive may be used for bonding.

Next, as shown in FIG. 21H , after the island 920 of the semiconductor thin film layer is bonded to the transfer destination substrate 931 , structures necessary for semiconductor elements such as an interlayer insulating film and wiring are formed. For example, when sintering for reducing the contact resistance between the electrode and the surface of the island 920 of the semiconductor thin film layer is not required, or when the sintering temperature is low, after the island 920 of the semiconductor thin film layer is bonded to the destination substrate 931 Form an opening in the fixed layer 928, form an electrode 924 in the region 921 where the p-type semiconductor layer is exposed in the opening, form an electrode 925 in the region 922 where the n-type semiconductor layer is exposed, and form a connection with the electrode 924 and the electrode 925 The wiring layer 927. Furthermore, an interlayer insulating film 926 including a part of the fixed layer 928 may also be formed. For example, an interlayer insulating film 926 may be provided on a part of the fixed layer 928 .

When bonding the plurality of islands 920 to the destination substrate 931 , the electrodes 924 and electrodes 925 respectively formed on the plurality of islands 920 may be connected via the wiring layer 927 . The plurality of islands 920 may be obtained by dividing one semiconductor element of a predetermined size into a plurality of small-sized elemental semiconductor elements (a plurality of small-sized islands). A plurality of small-scale element semiconductor elements may all have the same structure, and may all have the same size. By such means, it is preferable to suppress a temperature rise as described below.

In a large-sized semiconductor element, the heat generated during operation is large, and the heat dissipation difference generated in the central region is particularly large, so the temperature rise of the element in the central region is large. In contrast, when one semiconductor element is divided into a plurality of small-sized elemental semiconductor elements, the divided elemental semiconductor elements are small in size, and each elemental semiconductor element is connected by a wiring layer 927 of a metal material having high thermal conductivity. By being connected, the heat generated in each component semiconductor element is efficiently dissipated through the transfer destination substrate 931 and the wiring layer 927 . As a result, the temperature rise of each small-sized element semiconductor element is suppressed.

In addition, since a plurality of elemental semiconductor elements as semiconductor thin film layers are bonded to the moving destination substrate 931, each small-sized elemental semiconductor element can be connected through the metal thin film wiring layer, so high-density integration can be realized. As a result, even if one semiconductor element is divided into a plurality of component semiconductor elements, a compact semiconductor element can be obtained. Such a form is particularly preferable for a semiconductor element through which a large current flows, for example, a power semiconductor element using a semiconductor material such as Si, SiC, GaN, Ga ₂ O ₃ , or diamond.

Furthermore, in the method of manufacturing a semiconductor device described with reference to FIGS. 21A to 21H , FIG. 21D exemplifies the case of forming the pinning layer 928 . However, the steps of FIG. 21E and subsequent steps may be performed without forming the pinning layer 928 . In this case, for example, as shown in FIG. 21I , in the state where the pick-up substrate 930 is fixed on the surface of the island 920 (for example, the surface of the region 921 where the p-type semiconductor layer is exposed and the surface of the outer peripheral wall 923 ), an oblique line can be formed. The gap is formed, and the pick-up substrate 930 is lifted after the gap is formed, thereby separating the island 920 from the parent substrate 901 . In the state of FIG. 21I , the island 920 may also be fixed by picking up an external device other than the substrate 930 .

In this way, when the fixed layer 928 is not formed, after the island 920 of the semiconductor thin film layer is bonded to the moving destination substrate 931, the electrode 924 is formed in the region 921 where the p-type semiconductor layer is exposed, and the electrode 924 is formed in the region 921 where the n-type semiconductor layer is exposed. Electrode 925 is formed in region 922 of . In addition, an interlayer insulating film 926 is formed to cover at least a part of the region 921 where the p-type semiconductor layer is exposed and the region 922 where the n-type semiconductor layer is exposed, and has an opening for exposing a part of the electrode 924 and the electrode 925, And the wiring layer 927 connected to the electrode 924 and the electrode 925 is formed.

As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range described in the said embodiment, Various deformation|transformation and a change are possible within the range of the summary. In addition, new embodiments produced by arbitrary combinations of a plurality of embodiments are also included in the embodiments of the present invention. The effect of the new embodiment produced by combination also has the effect of the original embodiment.

101, 401, 501, 701, 801, 901, 1001, 3001‧‧‧base metal substrate 102‧‧‧planned removal layer 103, 117, 403a, 403b, 403c, 503a～503c, 703a, 703b, 703c, 703d, 803‧‧‧space 104‧‧‧Semiconductor thin film layer 106‧‧‧Scheduled removal area 108, 109, 408a, 408b, 408c, 508a, 508b, 508c, 708, 708a, 708b, 708c, 708d, 718a, 718b, 808, 920‧‧‧island/island of semiconductor film layer 110, 112, 114, 410a, 410b, 410c, 414a, 414b, 414c, 416a, 416b, 416c, 510a, 510b, 510c, 514a, 514c, 516a, 516c, 705a, 705b, 705c, 705d, 714a, 714b, 814, 928‧‧‧fixed layer 130, 131, 921, 922, 1002a, 1002b‧‧‧area 200, 200', 420, 520, 710, 930‧‧‧Pick up substrate 201, 421, 521, 711‧‧‧base substrate 202, 422a, 422b, 422c, 522, 522a, 522c‧‧‧Pick up bumps 204, 712‧‧‧pickup layer 210, 430, 530‧‧‧structure 301, 451, 531, 731, 831, 931‧‧‧moving destination board 302, 551‧‧‧surface 308, 558a, 558c‧‧‧face 742, 744‧‧‧Component loading area 800‧‧‧semiconductor components 816a, 816b‧‧‧opening 822, 824, 924, 925‧‧‧electrodes 842, 926‧‧‧Interlayer insulating film 854, 856, 927‧‧‧wiring layer 923‧‧‧peripheral wall 1003‧‧‧Slot 3002‧‧‧Sacrifice layer 3003‧‧‧Semiconductor epitaxial layer 3004‧‧‧Support 3010‧‧‧Sacrificial layer etched area a, b‧‧‧side L1, L2, L3, L4‧‧‧Length L2a, L2b‧‧‧width θ‧‧‧angle

FIG. 1A is a diagram for explaining a method of detaching an island of a semiconductor thin film layer from a base substrate. FIG. 1B is a diagram for explaining a method of detaching an island of a semiconductor thin film layer from a base substrate. FIG. 1C is a diagram for explaining a method of detaching the islands of the semiconductor thin film layer from the base substrate. FIG. 1D is a diagram illustrating a method of detaching the islands of the semiconductor thin film layer from the base substrate. FIG. 1E is a diagram illustrating a method of detaching an island of a semiconductor thin film layer from a base substrate. FIG. 2A is a diagram showing a pick-up substrate as a third substrate. Fig. 2B is the section A-A of Fig. 2A. FIG. 2C is a diagram showing a modified example of picking up a substrate. 3A is a diagram schematically showing a step of separating islands of a semiconductor thin film layer from a base substrate. 3B is a diagram schematically showing a step of separating islands of the semiconductor thin film layer from the base substrate. 3C is a diagram schematically showing a step of separating islands of the semiconductor thin film layer from the base substrate. FIG. 3D is a diagram schematically showing steps up to bonding the islands of the separated semiconductor thin film layer to the transfer destination substrate. FIG. 3E is a diagram schematically showing steps up to bonding the islands of the separated semiconductor thin film layer to the transfer destination substrate. FIG. 3F is a diagram schematically showing steps up to bonding the islands of the separated semiconductor thin film layer to the transfer destination substrate. 4A is a diagram schematically showing a step of moving islands of a plurality of semiconductor thin film layers. 4B is a diagram schematically showing a step of moving islands of a plurality of semiconductor thin film layers. 4C is a diagram schematically showing a step of moving islands of a plurality of semiconductor thin film layers. FIG. 4D is a diagram schematically showing a step of moving islands of a plurality of semiconductor thin film layers. FIG. 4E is a diagram schematically showing a step of moving islands of a plurality of semiconductor thin film layers. FIG. 5A is a diagram for explaining a method of moving islands of a plurality of semiconductor thin film layers. FIG. 5B is a diagram for explaining a method of moving islands of a plurality of semiconductor thin film layers. FIG. 5C is a diagram for explaining a method of moving islands of a plurality of semiconductor thin film layers. FIG. 5D is a diagram for explaining a method of moving islands of a plurality of semiconductor thin film layers. FIG. 5E is a diagram illustrating a method of moving islands of a plurality of semiconductor thin film layers. FIG. 6 is a diagram showing a flow of steps in the method of manufacturing a semiconductor element according to the present embodiment. FIG. 7A is an example of a modified example of the method of manufacturing a semiconductor element. FIG. 7B is an example of a modified example of the method of manufacturing a semiconductor element. FIG. 7C is an example of a modified example of the method of manufacturing a semiconductor element. Fig. 7D is an A-A sectional view of the semiconductor element. FIG. 8A is a diagram showing the structure of a semiconductor element. FIG. 8B is a diagram showing the structure of a semiconductor element. FIG. 8C is a diagram showing the structure of a semiconductor element. FIG. 9A is a diagram showing a modified example of the shape of the pinned layer. FIG. 9B is a diagram showing a modified example of the shape of the pinned layer. FIG. 9C is a diagram showing a modified example of the shape of the pinned layer. FIG. 9D is a diagram showing a modified example of the shape of the pinned layer. FIG. 10 is a diagram schematically illustrating a semiconductor epitaxial wafer used as a base substrate. 11A is a graph showing the relationship between the angle θ and the etching rate of the Si (111) substrate surface region in the direction perpendicular to the long sides of the islands of the semiconductor thin film layer. FIG. 11B is a diagram for explaining the angle θ. FIG. 12 is a diagram showing islands of hexagonal semiconductor thin film layers. 13A is a microscope photograph of islands of a GaN semiconductor thin film layer formed on a Si (111) substrate as a base substrate. 13B is a microscope photograph of the islands of the GaN semiconductor thin film layer in which the direction of the long sides of the islands of the semiconductor thin film layer with respect to the crystallographic direction of the base substrate is different from that of FIG. 13A . 14 is a microscope photograph of a state in which islands of semiconductor thin film layers whose long sides are substantially parallel to the <1-100> direction are bonded to a moving destination substrate. FIG. 15A is a diagram for explaining a method of making the fixing layer easy to break. FIG. 15B is a diagram for explaining a method of making the fixing layer easy to break. FIG. 16 is a microscope photograph showing the results of observing the separation state of the pinned layer in an actual experiment. FIG. 17 is a microscope photograph of a state in which islands of semiconductor thin film layers separated from a base substrate are bonded to a transfer destination substrate. FIG. 18A is a diagram showing an example of a fixed layer having a region extending in the short-side direction. FIG. 18B is a diagram showing an example of a fixed layer having a region extending in the short-side direction. 19A is a diagram schematically showing a state in which a semiconductor thin film layer formed on a base substrate is divided into individual semiconductor thin film layer islands, and is a top view of the base substrate and the islands of the semiconductor thin film layer. Fig. 19B is a cross-sectional view of the base substrate and the island of the semiconductor thin film layer. 20A is a top view of a semiconductor element including a semiconductor thin film layer formed with a stepped structure not exposed to the outer peripheries of islands of the semiconductor thin film layer. 20B is an A-A sectional view of the semiconductor element shown in FIG. 20A. Fig. 20C is a B-B sectional view of the semiconductor element shown in Fig. 20A. FIG. 21A is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21B is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21C is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21D is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21E is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21F is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21G is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21H is a diagram for explaining a method of manufacturing a semiconductor element. FIG. 21I is a diagram for explaining a method of manufacturing a semiconductor element. Fig. 22 is a diagram for explaining the prior art.

101: base material substrate

103: Gap

108: Islands/islands of semiconductor thin film layers

110: fixed layer

200: Pick up the substrate

201: base substrate

202: Pick up the bump

Claims (9)

A method of manufacturing a semiconductor element, comprising separating an island of a semiconductor thin film layer of group III nitride formed above a first substrate from the first substrate and bonding it to a second substrate different from the first substrate, The manufacturing method of the semiconductor element is characterized in that it includes: a step of forming an island of the semiconductor thin film layer on the first substrate, and the island of the semiconductor thin film layer is formed of the semiconductor thin film layer of group III nitride. The direction of the long side of the island is formed in an angle range of ±45° or less with respect to the <112> direction of the Si (111) substrate as the first substrate; the step of forming a fixed layer as a thin film, the fixed bonding at least a part of the main surface of the island of the semiconductor thin film layer on the side opposite to the side of the first substrate to at least a part of the surface of the island side of the semiconductor thin film layer in the first substrate ; after the step of forming the fixed layer, by placing the island of the semiconductor thin film layer or a part of the first substrate, or a part of the layer between the island of the semiconductor thin film layer and the first substrate a step of removing a region to form a void; a step of combining a third substrate different from the first substrate and the second substrate with a bonding region of at least a part of the fixed layer and the island of the semiconductor thin film layer; moving the third substrate in a direction away from the first substrate in a state where the third substrate is bonded to the bonding region, thereby separating the islands of the semiconductor thin film layer from the first substrate steps; and In the step of bonding the semiconductor thin film layer separated from the first substrate to the second substrate, in the step of forming the fixed layer, the fixed layer is formed to have a thickness as follows: by moving The force of the third substrate is such that a crack occurs between the pinned layer formed on the first substrate and the pinned layer formed on the side surface of the semiconductor thin film layer. A method of manufacturing a semiconductor element, comprising separating islands of a hexagonal semiconductor thin film layer formed above a first substrate from the first substrate and bonding them to a second substrate different from the first substrate, the The method for manufacturing a semiconductor element is characterized in that it includes: a step of forming an island of the semiconductor thin film layer on the first substrate, and the island of the semiconductor thin film layer is a long side of the island of the semiconductor thin film layer in a hexagonal crystal. The direction of the hexagonal crystal substrate as the first substrate is formed in an angle range of ±45° or less with respect to the <1-100> direction of the hexagonal crystal substrate; the step of forming a fixed layer as a thin film, the fixed layer At least a part of the main surface of the island of the semiconductor thin film layer on the side opposite to the side of the first substrate is combined with at least a part of the surface of the island side of the semiconductor thin film layer in the first substrate; forming the After the step of fixing the layer, it is formed by removing the island of the semiconductor thin film layer or a part of the first substrate, or a part of the layer between the island of the semiconductor thin film layer and the first substrate The step of void; the 3rd substrate different from described 1st substrate and described 2nd substrate and described A step of bonding the fixed layer and at least a part of the bonding region of the island of the semiconductor thin film layer; separating the edge of the third substrate from the first substrate in a state where the third substrate is bonded to the bonding region a step of moving in a direction in which the semiconductor thin film layer is separated from the first substrate; and a step of bonding the semiconductor thin film layer separated from the first substrate to the second substrate, In the step of forming the fixed layer, the fixed layer is formed to have a thickness such that the fixed layer formed on the first substrate and the fixed layer formed on the third substrate are separated by force of moving the third substrate. A thickness at which cracks are formed between the fixed layers on the side surfaces of the semiconductor thin film layer. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein in the step of forming the fixed layer, the fixed layer is formed to a thickness such that the fixed layer is formed along the first substrate. The force of moving the third substrate in the direction away from the fixed layer cuts the thickness. The method for manufacturing a semiconductor device as described in claim 1 or claim 2, wherein in the step of forming the fixed layer, the fixed layer is formed to a thickness such that, in the step of combining The force applied from the third substrate toward the fixed layer has a thickness such that cracks are generated in the fixed layer. Manufacturing of semiconductor components as described in item 1 or item 2 of the scope of the patent application In the manufacturing method, in the step of forming the fixed layer, the fixed layer is formed to be thinner than the thickness of the islands of the semiconductor thin film layer. The method for manufacturing a semiconductor element as described in claim 1 or 2 of the scope of the patent application, wherein after the step of bonding the island of the semiconductor thin film layer to the second substrate, it further includes: a third substrate, and the step of separating the organic material layer combined with the second substrate by removing the island of the semiconductor thin film layer from the third substrate. A kind of semiconductor substrate, comprises: the 1st substrate that is formed by Si (111); The island of the semiconductor thin film layer of group III nitride, with the direction of its long side relative to the Si (111) substrate as described 1st substrate < The 112> direction is formed on the first substrate in an angle range of ±45° or less; At least a part of the main surface on the opposite side is combined with at least a part of the surface of the island side of the semiconductor thin film layer in the first substrate, and there is a gap between the island of the semiconductor thin film layer and the first substrate. gap, and the gap is exposed in at least a part of the fixed layer, the fixed layer has the following thickness: by applying a third substrate different from the first substrate and the fixed layer and the semiconductor thin film The force of moving the third substrate in the state where at least a part of the bonded region of the islands of the layer is bonded causes cracks in the thickness. A semiconductor substrate, comprising: The first substrate formed of hexagonal crystal; the island of the hexagonal semiconductor thin film layer, the direction of its long side is ±45° or less with respect to the <1-100> direction of the hexagonal crystal substrate as the first substrate Formed on the first substrate in an angular range; and as a fixed layer of the thin film, the fixed layer holds at least a part of the main surface of the island of the semiconductor thin film layer on the opposite side to the side of the first substrate combined with at least a part of the surface of the island side of the semiconductor thin film layer in the first substrate, there is a gap between the island of the semiconductor thin film layer and the first substrate, and at least a part of the fixed layer The gap is exposed, and the fixed layer has a thickness that is combined with the bonding region of at least a part of the island of the fixed layer and the semiconductor thin film layer by applying a third substrate different from the first substrate. The force of moving the third substrate in the state, and the thickness of the crack. The semiconductor substrate according to claim 7 or claim 8, wherein the thickness of the fixed layer is thinner than the thickness of the islands of the semiconductor thin film layer.

Images