TWI795714B - 紅外隱身布料及紅外隱身服裝 - Google Patents
紅外隱身布料及紅外隱身服裝 Download PDFInfo
- Publication number
- TWI795714B TWI795714B TW110101829A TW110101829A TWI795714B TW I795714 B TWI795714 B TW I795714B TW 110101829 A TW110101829 A TW 110101829A TW 110101829 A TW110101829 A TW 110101829A TW I795714 B TWI795714 B TW I795714B
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- Taiwan
- Prior art keywords
- infrared
- light absorber
- cloth
- carbon
- carbon nanotubes
- Prior art date
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Abstract
一種紅外隱身布料,其包括:一布料襯底;一紅外光吸收體,該紅外
光吸收體設置在所述布料襯底上;所述紅外光吸收體包括複數個奈米碳管及複數個碳顆粒,所述複數個奈米碳管形成一網路狀結構,所述複數個碳顆粒位於所述網路狀結構中。本發明進一步涉及一種紅外隱身服裝。
Description
本發明涉及一種紅外隱身布料及紅外隱身服裝,尤其涉及一種基於奈米碳管之紅外隱身布料及紅外隱身服裝。
紅外輻射係波長介於可見光與微波之間之電磁波,人眼察覺不到。要察覺這種輻射之存在並測量其強弱,必須把它轉變成可以察覺及測量之其他物理量。隨著光電技術之發展,熱紅外探測在現代軍事偵察監視中發揮著至關重要之作用,熱紅外威脅也不斷升級。紅外隱身技術係通過降低目標物體之紅外輻射特性,以降低目標物體與複雜環境之間之紅外輻射特徵差異,從而使探測系統難以發現目標物體或者使探測系統之探測效果降低。然而,先前之紅外隱身技術對紅外輻射之吸收率較低,導致隱身效果較差。
有鑒於此,提供一種隱身效果較好之紅外隱身布料及紅外隱身服裝實為必要。
一種紅外隱身布料,其包括:一布料襯底;一紅外光吸收體,該紅外光吸收體設置在所述布料襯底上;所述紅外光吸收體包括複數個奈米碳管及複數個碳顆粒,所述複數個奈米碳管形成一網路狀結構,所述複數個碳顆粒位於所述網路狀結構中。
一種紅外隱身服裝,其包括一衣服本體,該衣服本體之至少部分布料為所述紅外隱身布料。
與先前技術相比,本發明將奈米碳管及碳顆粒設置在溶劑中形成光吸收體預製液,噴塗該光吸收體預製液後,可以形成能夠吸收紅外光之光吸收體,該紅外光吸收體不僅具有較高之吸收率,高達99.9%,而且具有全向吸收性能,從而使得所述紅外隱身布料及紅外隱身服裝具有較好之隱身效果。
100:紅外探測器
110:紅外光吸收體
112:熱電元件
114:電訊號檢測器
200:紅外成像儀
210:紅外接收器
220:紅外探測器組件
230:訊號處理器
240:紅外像顯示器
300:紅外隱身布料
310:布料襯底
400:紅外隱身衣服
500:太陽能集熱器
502:箱體
504:透明蓋板
506:保溫材料
508:吸熱板
5080:基體
5082:塗層
5084:流體通道
600:太陽能熱水器
602:進水管
604:出水管
606:蓄水箱
圖1為本發明第一實施例中將奈米碳管分散在乙醇溶液中之透射電鏡(TEM)照片。
圖2為本發明第一實施例中直徑為20微米之碳黑粉末之掃描電鏡(SEM)照片。
圖3為本發明第一實施例中將1克碳黑粉末添加到奈米碳管懸浮液中之光學照片。
圖4為本發明第一實施例中將5克碳黑粉末添加到奈米碳管懸浮液中之光學照片。
圖5為本發明第一實施例中將7克碳黑粉末添加到奈米碳管懸浮液中之光學照片。
圖6為本發明第二實施例中玩具噴塗光吸收體預製液之前之光學照片。
圖7為本發明第二實施例中玩具噴塗光吸收體預製液之後之光學照片。
圖8為本發明第二實施例中純奈米碳管分散液噴塗層之SEM照片。
圖9為本發明第二實施例中石英基底噴塗所述光吸收體預製液之後之SEM照片。
圖10為本發明第二實施例中所述純奈米碳管分散液噴塗層之SEM照片。
圖11為本發明第二實施例中所述光吸收體之SEM照片。
圖12為本發明第二實施例中所述純奈米碳管分散液噴塗層之另一SEM照片。
圖13為本發明第二實施例中所述光吸收體之另一SEM照片。
圖14為本發明第二實施例中所述光吸收體在可見光波長範圍內之反射光譜。
圖15為本發明第二實施例中所述光吸收體在近紅外波長範圍內之反射光譜。
圖16為本發明第二實施例中所述光吸收體在中紅外波長範圍內之反射光譜。
圖17為本發明第二實施例中所述光吸收體在入射角為15°時測得之反射光譜。
圖18為本發明第二實施例中所述光吸收體在入射角為30°時測得之反射光譜。
圖19為本發明第二實施例中所述光吸收體在入射角為45°時測得之反射光譜。
圖20為本發明第二實施例中所述光吸收體在入射角為60°時測得之反射光譜。
圖21為本發明第二實施例中含有5g碳顆粒之光吸收體(在矽基板上噴塗所述光吸收體預製液)之熱像儀照片。
圖22為本發明第二實施例中含有5g碳顆粒之光吸收體(在矽基板上噴塗所述光吸收體預製液)暴露在太陽光下之時間-溫度曲線圖。
圖23為本發明第二實施例中在石英基底上噴塗光吸收體預製液之後之光學照片。
圖24為本發明第二實施例中紅外熱像儀捕獲之熱圖像。
圖25為本發明第二實施例中水滴落在所述光吸收體表面之光學照片。
圖26為本發明第三實施例提供之紅外探測器之結構示意圖。
圖27為本發明第三實施例提供之紅外成像儀之結構示意圖。
圖28為本發明第四實施例提供之紅外隱身布料之結構示意圖。
圖29為本發明第四實施例所述紅外隱身布料之光學照片。
圖30為本發明第四實施例提供之被紅外隱身布料覆蓋之手之光學照片。
圖31為本發明第四實施例提供之被紅外隱身布料覆蓋之手之熱像照片。
圖32為本發明第四實施例提供之紅外隱身衣服之結構示意圖。
圖33為本發明第五實施例提供之太陽能集熱器之結構示意圖。
圖34為本發明第五實施例提供之太陽能熱水器之結構示意圖。
下面將結合附圖及具體實施例對本發明提供之紅外隱身布料及紅外隱身服裝作進一步之詳細說明。
本發明第一實施例提供一種光吸收體預製液,其包括一溶劑、複數個奈米碳管及複數個碳顆粒。所述複數個奈米碳管及複數個碳顆粒位於所述溶劑中。所述光吸收體預製液為懸浮溶液。
所述複數個奈米碳管在所述溶劑中形成絮狀結構,該絮狀結構係指複數個奈米碳管通過凡得瓦力相互吸引、纏繞,形成網路狀結構。也即,奈米碳管並非完全分散在溶劑中,而係在溶劑中形成一網路狀結構。所述奈米碳管可以為單壁奈米碳管、雙壁奈米碳管或者多壁奈米碳管。本實施例中,所述奈米碳管為多壁奈米碳管,平均直徑為20nm(奈米)。
複數個碳顆粒位於所述網路狀結構中,每一個碳顆粒插入網路狀結構中被複數個奈米碳管包圍或包覆。具體之,一些碳顆粒之部分表面與奈米碳管直接接觸,部分表面暴露在外。所述碳顆粒之種類不限,比如碳黑。
所述溶劑之種類不限,比如有機溶劑。優選之,所述溶劑為易揮發之有機溶劑。
本實施例中,所述光吸收體預製液由所述溶劑、所述複數個奈米碳管及所述複數個碳顆粒組成,所述碳顆粒為碳黑粉末,所述溶劑為乙醇。
當碳顆粒之質量太少時,利用光吸收體預製液製作之光吸收體之吸收性能較差。當碳顆粒之質量太多時,難以噴塗光吸收體預製液。奈米碳管及碳顆粒之質量比為:奈米碳管:碳顆粒=4:5至4:70。溶劑之含量可以根據實際進行調整,保證所述光吸收體預製液可以進行噴塗工藝。所述光吸收體預製液中,當溶劑為200mL(毫升),奈米碳管為0.4g(克)時,碳顆粒之質量
為0.5g至7g。本實施例中,乙醇溶劑為200mL,奈米碳管為0.4g,碳顆粒為5g。
本發明第一實施例進一步提供一種所述光吸收體預製液之製備方法,其包括以下步驟:S11,提供複數個奈米碳管;S12,將所述複數個奈米碳管放入所述溶劑中,進行絮化處理,得到奈米碳管懸浮液;及S13,將複數個碳顆粒放入所述奈米碳管懸浮液中,並混合。
步驟S11中,奈米碳管之製備方法不限,比如,電弧放電法、鐳射蒸發法、或者化學氣相沈積法等。本實施例中,利用化學氣相沈積法製備奈米碳管,其包括以下步驟:S111,在一生長基底上生長一奈米碳管陣列;及S112,採用刀片或其他工具將所述奈米碳管陣列從生長基底刮落,獲得複數個奈米碳管。
步驟S111中,奈米碳管陣列中之複數個奈米碳管之長度不限。優選之,奈米碳管之長度大於100μm(微米)。所述複數個奈米碳管基本相互平行,並且基本垂直於生長基底之表面。本實施例提供之奈米碳管陣列為單壁奈米碳管陣列、雙壁奈米碳管陣列及多壁奈米碳管陣列中之一種。
本實施例中,奈米碳管陣列之製備方法採用化學氣相沈積法,其具體步驟包括:(a)提供一平整之生長基底,該生長基底可選用P型或N型矽基底,或選用形成有氧化層之矽基底,本實施例優選為採用8英寸之矽基底;(b)在生長基底表面均勻形成一催化劑層,該催化劑層材料可選用鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合之合金之一;(c)將上述形成有催化劑層之生長基底在700℃~900℃之空氣中退火約30分鐘~90分鐘;(d)將處理過之生長基底置於反應爐中,在保護氣體環境下加熱到500℃~740℃,然後通入碳源氣體反應約5分鐘~30分鐘,生長得到奈米碳管陣列,其高度大於100微米。該奈米碳管陣列為複數個彼此平行且垂直於生長基底生長之奈米碳管形成之純奈米碳管陣列,由於生成之奈米碳管長度較長,部分奈米碳管可能會相互纏繞。通過上述控制生長條件,該奈米碳管陣列中基本不含有雜質,如無定型碳或殘留
之催化劑金屬顆粒等。本實施例中,碳源氣可選用乙炔等化學性質較活潑之碳氫化合物,保護氣體可選用氮氣、氨氣或惰性氣體。
步驟S12中,絮化處理可通過採用超聲波分散處理或高強度攪拌等方法。優選地,本實施例採用超聲波分散10分鐘~30分鐘。由於奈米碳管具有極大之比表面積,相互纏繞之奈米碳管之間具有較大之凡得瓦力,所述絮化處理並不會將奈米碳管原料中之奈米碳管完全分散在溶劑中,奈米碳管之間通過凡得瓦力相互吸引、纏繞,形成網路狀結構,也可稱為絮狀結構。圖1為本實施例中將奈米碳管分散在乙醇溶液中之透射電鏡(TEM)照片。由圖1可以看出,奈米碳管相互連接形成網路狀結構。
步驟S12中,優選之,可以加入分散劑,本實施例中,所述分散劑為聚乙烯吡咯烷酮(PVP)。
步驟S13中,混合之方式不限,本實施例中,採用超聲振盪之方式進行混合。圖2為本實施例中碳黑粉末之光學照片。
步驟S12及步驟S13中,奈米碳管及碳顆粒之質量比為:奈米碳管:碳顆粒=4:5至4:70。溶劑之含量可以根據實際進行調整,保證所述光吸收體預製液可以進行噴塗工藝。優選之,溶劑為200mL,奈米碳管為0.4g,碳顆粒為0.5g至7g。
所述光吸收體預製液也可以通過先混合奈米碳管及碳顆粒,然後分散在所述溶劑中之方法製備。
實施例一
在8英寸之矽片上生長高度為285微米之奈米碳管陣列,並將該奈米碳管陣列從矽片上刮下來放入乙醇溶劑中。然後,加入PVP(每200mL乙醇溶劑中添加0.1g PVP),利用超聲細胞破碎儀進行超聲絮化處理。最後,加入直徑為10μm之碳黑粉末,再進行0.5h(小時)之超聲處理,得到穩定之光吸收體預製液。實施例一中,在奈米碳管懸浮液中添加1g碳黑粉末時,奈米碳管及碳黑粉末之聚集效果不明顯,如圖3所示。在奈米碳管懸浮液中添加5g碳黑粉末時,奈米碳管及碳黑粉末聚集在一起,如圖4所示,但仍然可以使用噴槍噴塗該光吸收體預製液,並且噴塗層保持均勻。然,在奈米碳管懸浮液中添加7g碳黑粉末時,奈米碳管及碳黑粉末之聚集很嚴重,形成沉澱物沈積在瓶底,與上層液體明顯分層,如圖5所示。圖5中,上層液體透明,這表明其中之奈米
碳管含量很低。沉澱物係膠狀物質,不能用於噴塗。故,在200mL乙醇溶劑及0.4g奈米碳管形成之奈米碳管懸浮液中,添加5g碳黑粉末係噴塗之最佳比例。
所述光吸收體預製液及其製備方法具有以下優點:第一、將該光吸收體預製液噴塗在其他物體上,可以形成能夠吸收紅外光及太陽光之光吸收體;第二、製備方法簡單,可以批量生產。
本發明第二實施例提供一種光吸收體,該光吸收體包括複數個奈米碳管及複數個碳顆粒,所述複數個奈米碳管形成一網路狀結構,複數個碳顆粒位於所述網路狀結構中,每一個碳顆粒插入網路狀結構中被複數個奈米碳管包圍或包覆,並且碳顆粒與奈米碳管直接接觸。奈米碳管網路狀結構將複數個碳顆粒連接在一起。
進一步,所述光吸收體也可以包括一基底,該基底用於支撐所述光吸收體。所述基底之種類、形狀、厚度等均不限。所述基底可以為石英、聚合物、金屬、陶瓷或者布等。所述基底之表面可以為平面、曲面,或者不規則表面。本實施例中,所述基底為石英。
本發明第二實施例進一步提供一種所述光吸收體之製備方法,包括以下步驟:S21,提供所述光吸收體預製液;及S22,將所述光吸收體預製液噴塗在所述基底上。
步驟S21中,所述光吸收體預製液已經在第一實施例進行了詳細描述,這裡不再贅述。
步驟S22中,噴塗之方式不限,本實施例中,採用噴槍噴塗,噴槍直徑為1毫米,載氣係壓力為0.3Mpa之氮氣,有效噴霧範圍約為150毫米,溶液消耗量為100毫升/分鐘。
進一步,在步驟S22之後,可以採用加熱等方式進行乾燥,以去除所述溶劑。本實施例中,溶劑為乙醇,噴塗後幾分鐘內完全乾燥,不需要進行任何熱處理。
圖6為玩具噴塗光吸收體預製液之前之光學照片,圖7為玩具噴塗光吸收體預製液之後之光學照片。由圖7可以得知,光吸收體預製液可以均勻地被噴塗在不規則表面上。
本實施例中,將所述光吸收體預製液噴塗在石英基底上,形成光吸收體,圖8至圖23為該光吸收體之性能表徵。
圖8為純奈米碳管分散液噴塗層之掃描電鏡(SEM)照片,純奈米碳管分散液係指僅將奈米碳管分散在溶劑中,溶質僅為奈米碳管。圖9為石英基底噴塗所述光吸收體預製液之後(光吸收體)之SEM照片。由圖8及圖9得知,複數個奈米碳管有效均勻地附著在複數個碳顆粒上,形成一噴塗層。通過奈米碳管之連接作用,複數個碳顆粒有縫隙地堆疊,從而使得所述光吸收體具有複數個孔,係一多孔結構,提高了光之吸收。
圖10為所述純奈米碳管分散液噴塗層之SEM照片。圖10中,純奈米碳管分散液噴塗層之表面相對平坦,平均表面粗糙度為數十微米。圖11為所述光吸收體之SEM照片。圖11中,光吸收體之表面保持了純奈米碳管分散液噴塗層表面之起伏形態,碳顆粒均勻地分佈在頂面上。
圖12為所述純奈米碳管分散液噴塗層之另一SEM照片,圖13為所述光吸收體之另一SEM照片。由圖12及圖13可以得知,光吸收體之表面粗糙度大於純奈米碳管分散液噴塗層之表面粗糙度。
由圖10至圖13可以得知,碳顆粒之引入增加了光吸收體之表面粗糙度,從而提高了光在所述光吸收體表面之散射及吸收。
圖14至圖16為所述光吸收體在垂直入射且無偏振之情況下之反射光譜,其中,圖14為所述光吸收體在可見光波長範圍內(400nm-800nm)之反射光譜,圖15為所述光吸收體在近紅外波長範圍內(800nm-2μm)之反射光譜,圖16為所述光吸收體在中紅外波長範圍內(2μm-20μm)之反射光譜。
由圖14至圖16可知,在可見光(400nm)至中紅外(20μm)之寬光譜範圍內,所述光吸收體之反射率隨著碳顆粒含量之增加而降低。含有5g碳顆粒之光吸收體,在可見光波長範圍內之反射率可達0.075%,在近紅外波長範圍內之反射率可達0.05%,在中紅外波長範圍內之反射率可達0.02%。圖14至圖16中,CNT spray指純奈米碳管分散液噴塗層,CNT array指奈米碳管陣列,所述光吸收體之反射率低於所述純奈米碳管分散液噴塗層之反射率,接近所述奈米碳管陣列之反射率。所述光吸收體之反射率低,說明光吸收體具有良好之光吸收性能。
圖17至圖20為所述光吸收體在入射角為0°至60°時測得之可見光波長範圍內之反射光譜,所述入射角係指光線與法線之間之角度,所述法線垂直與光吸收體之表面。其中,圖17為所述光吸收體在入射角為15°時測得之反射光譜,圖18為所述光吸收體在入射角為30°時測得之反射光譜,圖19為所述光吸收體在入射角為45°時測得之反射光譜,圖20為所述光吸收體在入射角為60°時測得之反射光譜。由圖17至圖20可知,入射角不同,光吸收體仍具有大致相同之反射率,說明光吸收體之反射率與入射角無關。這表明所述光吸收體在可見波長範圍內具有優異之全向吸收性能。所述“全向吸收”係指,在各個入射角度,所述光吸收體均有較高之吸收率。
圖20中,含有5g碳顆粒之光吸收體,在60°入射角之情況下之吸收率超過99.9%,幾乎與CNT陣列之吸收率相同。故,所述光吸收體在400nm至20μm之寬波長範圍內實現了99.9%之全向高吸收效率,且與入射角無關。
圖21為含有5g碳顆粒之光吸收體(在矽基板上噴塗所述光吸收體預製液)之熱像儀照片,圖22為含有5g碳顆粒之光吸收體(在矽基板上噴塗所述光吸收體預製液)暴露在太陽光下之時間-溫度曲線圖,研究所述光吸收體在太陽輻射下之升溫行為。太陽模擬器用作輻射源,標準功率密度為1000W/m2,光吸收體之溫度由中紅外熱像儀監控。圖21中,一開始無法將樣品與周圍環境區分開,0.5s(秒)後,樣品會吸收太陽光,溫度開始升高,此時可以清楚地從周圍環境中分辨樣品,隨著時間之增加,樣品之溫度會升高,直到溫度保持穩定。圖22顯示了由熱像儀記錄之樣品之溫度隨時間之變化,其中以純奈米碳管分散液噴塗層及矽基板為對比,從升溫速度及平衡溫度之角度來看,含有5g碳顆粒之光吸收體最優。
圖23為在石英基底上噴塗光吸收體預製液之後之光學照片,圖24為在太陽模擬系統之照射下,紅外熱像儀捕獲之熱圖像。由圖23及圖24可以得知,所述光吸收體可以吸收太陽光,並且可以收集太陽光之熱量。圖21至圖24表明所述光吸收體具有良好之太陽集熱性能。
圖25為水滴落在所述光吸收體表面之光學照片。由圖25得知,含有5g碳顆粒之光吸收體與水滴之接觸角達到165°,並且水滴容易滾落,說明所述光吸收體具有優異之超疏水特性,並且潤濕性能可以保持穩定而不損害光吸
收體之表面。當水滴從光吸收體之表面滑落時,灰塵及污垢會隨水滴之攜帶而去除,表明所述光吸收體具有良好之自清潔性能。
所述光吸收體及其製備方法具有以下優點:第一、可以在彎曲、不規則形狀或不平坦之表面上實施噴塗工藝;第二、所述光吸收體由奈米碳管及碳顆粒組成,也就係僅由碳材料形成,可以避免其他材料對吸收太陽光及紅外光之影響;第三、碳顆粒之引入提高了光吸收體之表面粗糙度,提高了光之吸收率;第四、所述光吸收體僅由碳材料形成,從而在寬波長範圍內(400nm-20μm)具有良好之吸收性能,吸收率達99.9%;第五、在寬波長範圍內(400nm-20μm)可以對光全向吸收,且與入射角無關;第六、所述光吸收體具有優異之超疏水特性及良好之自清潔性能。
請參見圖26,本發明第三實施例提供一種紅外探測器100,該紅外探測器100包括一紅外光吸收體110,一熱電元件112及一電訊號檢測器114。所述紅外光吸收體110設置於所述熱電元件112上,並與所述熱電元件112直接接觸設置。所述熱電元件112與所述紅外光吸收體110層疊設置時,所述紅外光吸收體110中奈米碳管之長度延伸方向平行於熱電元件112與紅外光吸收體110之接觸面。所述電訊號檢測器114與所述熱電元件112通過導線電連接,所述電訊號檢測器114與所述熱電元件112串聯形成一回路,用於檢測所述熱電元件112之電學訊號變化。
所述紅外光吸收體110係將所述光吸收體預製液噴塗到所述熱電元件112上形成,也就係說,所述紅外光吸收體110具有與所述光吸收體相同之結構及性能,這裡不再贅述。
所述紅外光吸收體110在吸收紅外光後自身溫度升高,又由於奈米碳管之導熱係數高,故紅外光吸收體110能夠將熱量傳遞給所述熱電元件112。當所述熱電元件112吸收熱量後,該熱電元件112之溫度升高,使得該熱電元件112之電學性能發生改變。
所述熱電元件112可為熱釋電元件、熱敏電阻或熱電偶元件等。具體地,所述熱釋電元件為高熱電係數之材料,如鋯鈦酸鉛系陶瓷、鉭酸鋰、鈮酸鋰、硫酸三甘鈦等。所述熱敏電阻可為半導體熱敏電阻、金屬熱敏電阻、合金熱敏電阻等。本實施例中,所述熱電元件112為鋯鈦酸鉛系陶瓷。
由於所述電訊號檢測器114用於檢測所述熱電元件112之電學訊號之改變,故所述電訊號檢測器114之種類根據熱電元件112之不同而不同。在一實施例中,所述熱電元件112為熱釋電元件,該熱釋電元件之溫度升高使熱釋電元件之兩端出現電壓或產生電流,這時,所述電訊號檢測器114可為電流-電壓變換器,該電流-電壓變換器與熱釋電元件串聯形成回路,即可檢測出所述熱釋電元件之電壓或電流之變化。在另一實施例中,所述熱電元件112為熱敏電阻,該熱敏電阻之溫度升高,電阻發生改變,這時,所述電訊號檢測器114包括一電源及一電流檢測器,該電源、電流檢測器與熱敏電阻串聯形成回路,通過電流檢測器測量得到電流之變化,用以檢測出熱敏電阻之電阻改變。在另一實施例中,所述熱電元件112為熱電偶,將所述紅外光吸收體110設置在熱電偶之一端,熱電偶之兩端出現溫度差,即會在熱電偶之兩端出現電勢差,這時,所述電訊號檢測器114可為一電壓檢測器,該電壓檢測器與熱電偶串聯形成回路,即可檢測出所述熱電偶之電勢變化。
所述紅外探測器100之工作過程為:紅外光輻射至所述紅外光吸收體110(即所述光吸收體)上,所述光吸收體吸收紅外光並將所吸收之紅外光轉化為熱量;該熱量被傳遞給所述熱電元件112;所述熱電元件112吸收熱量後溫度升高,導致熱電元件112之電阻、電流或電壓等電學性能發生變化,當所述電訊號檢測器114與熱電元件112之兩端電連接形成回路時,該電訊號檢測器114能夠檢測出熱電元件112之電學訊號發生改變,從而檢測出探測區域記憶體在紅外光。
本發明第三實施例提供之紅外探測器100具有以下優點:第一、所述紅外光吸收體110對波長在2μm-20μm之近紅外至中紅外光具有良好之吸收效果,提高了所述熱電元件112之回應度及靈敏度,從而使得所述紅外探測器100具有較高之靈敏度;第二、所述紅外光吸收體110不僅具有全向吸收性能,而且與偏振無關,擴大了紅外探測器100之使用範圍。
請參見圖27,本發明第三實施例進一步提供一種紅外成像儀200,該紅外成像儀200包括一紅外接收器210、一紅外探測器組件220、一訊號處理器230及一紅外像顯示器240。所述紅外接收器210用於接收紅外輻射光譜並將紅外光傳遞至所述紅外探測器組件220;所述紅外探測器組件220用於將紅外輻射光譜轉化為電學訊號,並將電學訊號傳遞至所述訊號處理器230;所述訊號處
理器230用於對電學訊號進行處理計算得到熱場分佈資料;所述紅外像顯示器240根據熱場分佈資料顯示紅外熱像圖。
所述紅外接收器210用於接收物體發射之紅外輻射光譜,也即物體所發射之紅外光。進一步,所述紅外接收器210還可彙聚所述紅外輻射光譜。本實施例中,所述紅外接收器210為紅外鏡頭。具體地,物體發射之紅外輻射光譜經紅外鏡頭接收及彙聚後,直接被傳遞至所述紅外探測器組件220。可以理解,所述紅外接收器210也可以省略。
所述紅外探測器組件220包括複數個第三實施例中之紅外探測器100,該複數個紅外探測器100呈二維陣列式均勻分佈,且每個紅外探測器100均可將紅外輻射光譜轉化為電學訊號變化。可以理解,每個紅外探測器100相當於一個圖元點,每個紅外探測器100將所在位置之紅外輻射光譜轉化為電學訊號,從而實現所述紅外探測器元件220對物體發射之紅外輻射光譜之探測。任意相鄰之兩個紅外探測器100之間距可以根據熱成像之解析度要求進行選擇。
所述訊號處理器230用於對每個紅外探測器100之電學訊號進行處理計算,從而得到物體之熱場分佈情況。具體地,所述訊號處理器230根據每個紅外探測器100之電學訊號變化計算其對應之物體表面位置之溫度資料。即,所述訊號處理器230根據電學訊號可計算出物體之熱場分佈資料。
所述紅外像顯示器240用於顯示被測物體之紅外熱像圖。所述紅外像顯示器240之紅外熱像圖係根據物體之熱場分佈資料顯示之,不同之溫度採用不同之顏色顯示。故,所述紅外像顯示器240顯示之紅外熱像圖與物體之溫度分佈相對應,用於反映物體各個位置之溫度情況。例如,當紅外成像儀200用於醫學領域時,可以對人體進行全身熱成像,專業醫生可根據熱像圖判斷出人體不同部位之疾病性質及病變之程度,為臨床診斷提供依據。
所述紅外成像儀200在工作時,物體發出之紅外光被所述紅外接收器210接收;所述紅外接收器210將紅外光接收並彙聚後,再將紅外光傳遞至所述紅外探測器組件220;所述紅外探測器組件220將紅外光轉化為電學訊號,再將電學訊號傳遞給所述訊號處理器230;所述訊號處理器230對電學訊號進行處理計算從而得到物體之各個位置之溫度資料,即物體之熱場分佈資料;所述紅外像顯示器240再根據計算得到之熱場分佈資料顯示出物體之紅外熱像圖。
本發明第三實施例提供之紅外成像儀200具有以下優點:第一、所述紅外光吸收體110對波長在2μm-20μm之近紅外至中紅外光具有良好之吸收效果,提高了所述熱電元件112之回應度及靈敏度,從而使得所述紅外成像儀200具有較高之靈敏度;第二、所述紅外光吸收體110不僅具有全向吸收性能,而且與偏振無關,擴大了紅外成像儀200之使用範圍。
請參見圖28,本發明第四實施例提供一種紅外隱身布料300,該紅外隱身布料300包括一布料襯底310及設置在該布料襯底310上之所述紅外光吸收體110。所述紅外隱身布料300係將所述光吸收體預製液噴塗在布料襯底310上形成,故所述紅外光吸收體110具有與所述光吸收體相同之材料、結構及性能,這裡不再贅述。所述紅外光吸收體110也可以設置在兩個布料襯底310之間,形成三明治結構。所述複數個奈米碳管平行於所述紅外光吸收體110靠近所述布料襯底310之表面。
所述布料襯底310具有一通孔,以至於所述紅外光吸收體110懸空設置在所述布料襯底310上。所述布料襯底310之材料不限,可以為絕緣材料,也可以為導電體,可以為柔性材料,也可以為非柔性材料。本實施例中,所述布料襯底310之材料不限,比如棉、滌綸、絲綢、呢絨、麻、皮革等。另一實施例中,所述紅外光吸收體110被縫製在兩層布料之間。
圖29為所述紅外隱身布料300之光學照片,可以得知,所述紅外隱身布料300具有良好之柔軟性。所述紅外隱身布料300具有3×10-6g/mm2之低密度,超輕,可以應用於太空或軍事領域中。
圖30為所述紅外隱身布料300隱身效果測試之光學照片,圖31為紅外熱像儀對覆蓋有紅外隱身布料300之手所捕獲之熱像照片。由圖30及圖31可知,當所述紅外隱身布料300覆蓋手時,該手所發出之紅外均被紅外隱身布料300吸收,不會穿過紅外隱身布料300被其他紅外探測系統所檢測到。故,所述紅外隱身布料300具有良好之隱身效果。
請參見圖32,本發明第四實施例進一步提供一種紅外隱身衣服400,該紅外隱身衣服400至少部分係由所述紅外隱身布料300製成。也即,所述紅外隱身衣服400可以全部由所述紅外隱身布料300製成,也可以部分由所述紅外隱身布料300製成。所述紅外隱身衣服400也不僅限於衣服,可以為手套、口罩等,
這些衣服、手套、口罩可以統稱為紅外隱身服裝。所述紅外隱身服裝包括一衣服本體,該衣服本體之至少部分布料為所述之紅外隱身布料300。
本發明第四實施例提供之紅外隱身布料300及紅外隱身衣服400具有以下優點:第一、所述紅外光吸收體110對波長在2μm-20μm之近紅外至中紅外光具有良好之吸收效果,提高了所述紅外隱身布料300及紅外隱身衣服400之隱身效果;第二、所述紅外光吸收體110不僅具有全向吸收性能,而且與偏振無關,擴大了紅外隱身布料300及紅外隱身衣服400之使用範圍,也進一步提高了它們之隱身效果。
由於紅外隱身布料300中之紅外光吸收體110(即所述光吸收體)對太陽光有很好之吸收性能,故,紅外隱身布料300也可以製備成太陽傘等遮陽工具。
請參見圖33,本發明第五實施例提供一種太陽能集熱器500,其包括一箱體502、一透明蓋板504、一保溫材料506及一吸熱板508。所述箱體502具有一開口,優選之,該開口設置於所述箱體502之頂部。所述透明蓋板504設置在所述箱體502之開口處或者覆蓋所述開口,從而使太陽光穿過該透明蓋板504而進入箱體502內。所述保溫材料506設置在所述箱體502之內部並形成一保溫空間。優選之,所述保溫材料506設置在所述箱體502之內側面,從而使得所述保溫空間位於箱體502之內部。所述吸熱板508位於所述保溫空間內,所述吸熱板508包括複數個流體通道5084,以利於水等流體通過。
所述吸熱板508包括一基體5080及一塗層5082,所述基體5080之表面設置所述塗層5082,該塗層5082就係第二實施例中之光吸收體,二者具有相同之結構及性能。也就係說,所述塗層5082包括複數個奈米碳管及複數個碳顆粒,所述複數個奈米碳管形成一網路狀結構,複數個碳顆粒位於所述網路狀結構中,每一個碳顆粒插入網路狀結構中被複數個奈米碳管包圍或包覆,並且碳顆粒與奈米碳管直接接觸。奈米碳管網路狀結構將複數個碳顆粒連接在一起。所述塗層5082可以設置在所述基體5080之整個表面,或者設置在所述基體5080靠近透明蓋板之表面,並且與所述基體5080直接接觸。將所述光吸收體預製液噴塗在所述基體5080上,就可以形成所述塗層5082。所述基體5080包括所述複數個流體通道5084。
所述箱體502之材料不限,優選之,所述箱體502之材料為金屬。所述透明蓋板504可以選擇高透光率之材料製成,本實施例中,所述透明蓋板504為玻璃蓋板。所述保溫材料506可以為石棉、泡沫等。所述基體5080之材料不限,比如金屬、奈米碳管膜、石英、二氧化矽等,本實施例中,所述基體5080之材料為金屬。
可以理解,所述太陽能集熱器500還包括一些零部件,將上述各個元件緊固在一起,這些零部件包括螺絲、螺母等。
太陽光透過透明蓋板504照射到吸熱板508上,太陽輻射能被吸熱板508吸收,轉化為熱能,並傳向所述流體通道5084中之流體,並將該流體加熱。
請參見圖34,本發明第五實施例進一步提供一種太陽能熱水器600,其包括所述太陽能集熱器500、一進水管602、一出水管604及一蓄水箱606。所述進水管602與所述流體通道5084之一端連接,所述出水管604與流體通道5084之另一端連接。所述出水管604之一端與流體通道5084連接,另一端與蓄水箱606連接。水等流體從進水管602流入流體通道5084後從出水管604流出,並流入到蓄水箱606中。本實施例中,所述基體5080包括複數個流體通道5084,每一個流體通道5084之一端與進水管602連接,每一個流體通道5084之另一端與出水管604連接。
所述蓄水箱606進一步包括一出口(圖未示),可以使蓄水箱606中之水從該出口流出。
進一步,所述出水管604及所述蓄水箱606均可以設置一保溫層,對流經出水管604、蓄水箱606中之溫水或熱水進行保溫。所述保溫層之材料與所述保溫材料506相同。
所述太陽能熱水器600之工作過程:太陽光透過透明蓋板504照射到吸熱板508上,太陽輻射能被吸熱板508吸收,轉化為熱能,並傳向所述流體通道5084。這樣,從進水管602進入之冷水,在流體通道5084中太陽能加熱,溫度逐漸升高成為溫水或熱水,溫水或熱水從所述出水管604流入蓄水箱606中待用。
所述太陽能集熱器500及所述太陽能熱水器600具有以下優點:第一、由於所述塗層5082對光全向吸收,可以提高集熱性能,也即提高吸熱率,
減少太陽光之熱損失;第二、所述塗層5082具有優異之超疏水特性及良好之自清潔性能,延長了所述太陽能集熱器500及所述太陽能熱水器600之使用壽命。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
110:紅外光吸收體
300:紅外隱身布料
310:布料襯底
Claims (9)
- 一種紅外隱身布料,其包括:一布料襯底;一紅外光吸收體,該紅外光吸收體設置在所述布料襯底上;其改良在於,所述紅外光吸收體包括複數個奈米碳管及複數個碳顆粒,所述複數個奈米碳管相互纏繞,形成一網路狀結構,所述複數個碳顆粒位於所述網路狀結構中,所述奈米碳管及所述碳顆粒之質量比為4:5至4:70。
- 如請求項1所述之紅外隱身布料,其中,所述紅外隱身布料包括兩個布料襯底,所述紅外光吸收體設置在所述兩個布料襯底之間。
- 如請求項1所述之紅外隱身布料,其中,所述複數個奈米碳管平行於所述布料襯底之表面。
- 如請求項1所述之紅外隱身布料,其中,每一個碳顆粒插入所述網路狀結構中被複數個奈米碳管包圍。
- 如請求項1所述之紅外隱身布料,其中,所述碳顆粒與所述奈米碳管直接接觸。
- 如請求項1所述之紅外隱身布料,其中,所述紅外光吸收體由奈米碳管及碳顆粒組成。
- 如請求項1所述之紅外隱身布料,其中,所述奈米碳管為0.4g,所述碳顆粒為0.5g至7g。
- 如請求項1所述之紅外隱身布料,其中,所述奈米碳管為0.4g,所述碳顆粒為5g。
- 一種紅外隱身服裝,其包括一衣服本體,其改良在於,所述衣服本體之至少部分布料為請求項1-8中任意一項所述之紅外隱身布料。
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