TWI795134B - 具有智慧功率級和電子熔斷器解決方案的半導體封裝以及降壓轉換器 - Google Patents

具有智慧功率級和電子熔斷器解決方案的半導體封裝以及降壓轉換器 Download PDF

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TWI795134B
TWI795134B TW110147949A TW110147949A TWI795134B TW I795134 B TWI795134 B TW I795134B TW 110147949 A TW110147949 A TW 110147949A TW 110147949 A TW110147949 A TW 110147949A TW I795134 B TWI795134 B TW I795134B
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mosfet
fuse
switch
side switch
low
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TW202240807A (zh
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普拉巴 烏帕德亞雅
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加拿大商萬國半導體國際有限合夥公司
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Abstract

一種半導體封裝包括一個引線框、一個低壓側金氧半場效電晶體（MOSFET）、電子熔斷器MOSFET、高壓側MOSFET、金屬連接、閘極驅動器、電子熔斷器IC和成型封裝。降壓變換器包括智慧功率級（SPS）網路和電子熔斷器解決方案網路。SPS網路包括高壓側開關、低壓側開關和閘極驅動器。低壓側開關的汲極經由開關節點耦合到高壓側開關的源極。閘極驅動器耦合到高壓側開關的閘極和低壓側開關的閘極。電子熔斷器解決方案網路包括傳感電阻器、電子熔斷器開關、電子熔斷器積體電路（IC）和SD電路。

Description

具有智慧功率級和電子熔斷器解決方案的半導體封裝以及降壓轉換器
本發明一般涉及一種用於提供過電流保護的功率半導體封裝。更確切地說，本發明涉及包括智慧功率級（SPS）網路和電子熔斷器解決方案網路的降壓轉換器。
對於包括資料中心和伺服器在內的計算市場，SPS經過優化，可在10%-15%的占空比下實現最高效率。高側金氧半場效電晶體（MOSFET）的管芯尺寸通常是低側MOSFET的四分之一，以實現開關損耗和傳導損耗之間的最佳平衡。MOSFET的峰值電流處理能力與晶片尺寸成正比。較小的晶片尺寸往往具有較低的峰值電流處理能力。在SPS中，由於額定電流較低，高側MOSFET發生故障的幾率較高。如果降壓轉換器配置中的高側MOSFET發生故障（通常短路），則很有可能由於過電壓電應力而導致出現負載故障。
本發明將SPS網路和電子熔斷器解決方案網路集成在同一半導體封裝中。電子熔斷器解決方案聯網檢測高壓側MOSFET故障。電子熔斷器 IC監視電子熔斷器 MOSFET的導通電阻（R DS-on），以估計透過電子熔斷器MOSFET的電流。電子熔斷器 IC還檢測直通事件所需的最佳頻寬估計平均電流。電子熔斷器 IC還監控電子熔斷器 MOSFET溫度，並對R DS-ON隨溫度變化的情況進行補償。爲了提高電流測量的精度，還可以集成帶有第二鏡像效應管的溝道MOSFET。
本發明公開了一種半導體封裝。在一個例子中，半導體封裝是降壓轉換器。該半導體封裝包括引線框架、低側金氧半場效電晶體（MOSFET）、電子熔斷器MOSFET、高側MOSFET、金屬連接、閘極驅動器、電子熔斷器IC和模制封裝。引線框架包括第一模槳、第二模槳和端部槳。低側MOSFET被翻轉並且連接到第一個晶片焊盤。
降壓變換器包括智慧功率級（SPS）網路和電子熔斷器解決方案網路。SPS網路包括高壓側開關、低壓側開關和閘極驅動器。低壓側開關的汲極經由開關節點耦合到高壓側開關的源極。閘極驅動器耦合到高壓側開關的閘極和低壓側開關的閘極。電子熔斷器解決方案網路包括傳感電阻器、電子熔斷器開關、電子熔斷器積體電路（IC）和短路檢測(SD)電路。
在本發明的示例中，第1A圖表示半導體封裝100的俯視圖，第1B圖表示其沿AA’的剖面圖，第1B圖表示沿BB’的剖面圖。在一個示例中，半導體封裝100是降壓轉換器。半導體封裝100包括引線框架110、低側金氧半場效電晶體（MOSFET）140、電子熔斷器MOSFET 130、高側MOSFET 160、金屬連接198、閘極驅動器積體電路（IC）170、電子熔斷器IC 180和模制封裝190。
在第1A圖中，模制封裝190被示為透明的，並且由虛線表示。為簡單起見，在第1B圖和第1C圖中，模塑封裝190未表示出。
引線框110包括一個第一晶片焊盤112、一個第二晶片焊盤114以及一個末端焊盤116。
低側MOSFET 140翻轉並附接至第一晶片焊盤112。低側MOSFET 140包括在低側MOSFET 140的頂表面上的源極140S和閘極140G，以及在低側MOSFET 140的底表面上的汲極140D。
電子熔斷器MOSFET 130連接至第二晶片焊盤114。電子熔斷器MOSFET包括在電子熔斷器MOSFET 130的頂表面上的源極130S和閘極130G，以及在電子熔斷器MOSFET 130的底表面上的汲極130D。
高壓側MOSFET 160連接至電子熔斷器MOSFET 130。高壓側MOSFET 160包括高壓側MOSFET 160頂面上的源極160S和閘極160G以及高壓側MOSFET 160底面上的汲極160D。高壓側MOSFET 160的汲極160D連接至源極電子熔斷器MOSFET 130的電極130S。
金屬連接198，例如金屬夾、金屬帶或其他導電連接，將低側MOSFET 140的汲極140D和高側MOSFET 160的源極160S連接到引線框架110的末端焊盤116。閘極驅動器IC 170連接到電子熔斷器MOSFET 130。電子熔斷器IC 180連接到閘極驅動器IC 170。模制封裝190包圍低側MOSFET 140，電子熔斷器MOSFET 130、高側MOSFET 160、金屬連接198、閘極驅動器IC 170和電子熔斷器IC 180。模制封裝190進一步包圍引線框架110的大部分。大部分大於50%。在本發明的實施例中，引線框架110的底面111從模制封裝190露出。
金屬連接198透過第一導電材料199A以電氣和機械方式連接到低側MOSFET 140的汲極140D。金屬連接198透過第二導電材料199B以電氣和機械方式連接到高側MOSFET 160的源電極160S。金屬連接198透過第三導電材料199C以電氣和機械方式連接到引線框架110的末端焊盤116。在本發明的實施例中，第一導電材料199A、第二導電材料199B和第三導電材料199C中的每一個都包括焊膏材料。
低側MOSFET 140的源電極140S透過第四導電材料129A以電氣和機械方式連接到第一晶片焊盤112。電子熔斷器MOSFET 130的汲極130D透過第五導電材料129B以電氣和機械方式連接到第二晶片焊盤114。高側MOSFET 160的汲極160D透過第六導電材料129C導電地和機械地連接到電子熔斷器MOSFET 130的源極130S。在本發明的示例中，第四導電材料129A、第五導電材料129B和第六導電材料129C中的每一個都包括焊膏材料。
閘極驅動器IC 170透過第一非導電材料179A連接到電子熔斷器MOSFET 130。電子熔斷器IC 180透過第二非導電材料179B連接到閘極驅動器IC 170。第一非導電材料179A和第二非導電材料179B中的每一個包括環氧樹脂材料。在一個可選示例中，電子熔斷器IC 180與閘極驅動器IC 170集成在同一IC晶片上。
低側MOSFET的閘極電極140G電連接到引線框架110的延伸部分113。引線框架110的延伸部分113延伸到引線框架110的邊緣115。多條接合引線171將閘極驅動器IC 170連接到引線框架110的延伸部分113。
第2圖表示在本發明的示例中，降壓轉換器200的框圖。降壓轉換器200包括智慧功率級（SPS）網路210和電子熔斷器解決方案網路250。SPS網路包括高壓側開關260、低壓側開關240，以及閘極驅動器270。低壓側開關240的汲極經由開關節點241耦合到高壓側開關260的源極。閘極驅動器270耦合到高壓側開關260的閘極和低壓側開關240的閘極。
電子熔斷器解決方案網路250包括可選的傳感電阻器251、電子熔斷器開關253、電子熔斷器積體電路（IC）290和SD電路280。可選的傳感電阻器251的第一節點耦合到電源201。在一個示例中，電源201為12伏。電子熔斷器開關253的電源耦合到高壓側開關260的汲極。電子熔斷器IC 290包括比較器292。比較器292包括參考輸入295、功能輸入297，以及輸出299。功能輸入297耦合到短路檢測（SD）節點291。SD電路280包括第一電路電阻器281、第二電路電阻器283、電路電容器285，以及電路二極體287。第一電路電阻器281的第一節點耦合到開關節點241，第一電路電阻器281的第二節點耦合到短路檢測（SD）節點291。第二電路電阻器283和電路電容器285並聯連接在短路檢測（SD）節點291和開關節點291之間參考地。電路二極體287的陰極耦合到開關節點241，陽極耦合到短路檢測（SD）節點291。
第3圖表示在本發明的示例中的射穿情況301。在本發明的示例中，低壓側開關240是第一金氧半場效電晶體（MOSFET）。高壓側開關260是第二MOSFET。MOSFET的峰值電流處理能力與MOSFET的尺寸成正比。第一MOSFET的尺寸大於第二MOSFET的尺寸，使得高壓側開關260具有比低壓側開關240更低的峰值電流處理能力。在本發明的示例中，第二MOSFET的尺寸是第一MOSFET尺寸的20%-30%。電子熔斷器IC 290還包括測量透過高壓側開關260的電流的集成電流傳感放大器390。當透過高壓側開關260的電流大於預定值時，電子熔斷器IC 290關閉電子熔斷器開關253。當高壓側開關260短路並且閘極驅動器270繼續驅動低壓側開關240時，流經高壓側開關260的電流增加。在第3圖所示的示例中，電流傳感放大器390檢測透過可選傳感電阻器251的電壓降以測量透過高壓側開關260的電流。在另一示例中，不提供可選傳感電阻器251，電子熔斷器IC監控電子熔斷器MOSFET的導通電阻（RDS-on），以估計透過電子熔斷器 MOSFET的電流。電流傳感放大器390檢測透過電子熔斷器開關253的電壓降以測量透過高壓側開關260的電流。電子熔斷器 IC還感測電子熔斷器 MOSFET的溫度以說明電子熔斷器 MOSFET的R DS-ON的溫度依賴性。在另一實例中，電子熔斷器 MOSFET是溝道MOSFET，其具有集成為公共汲極MOSFET的第二鏡像FET以提高電流測量精度。第二鏡像場效應電晶體具有與電子熔斷器 MOSFET的源電極分離的源電極，以及分別連接到電子熔斷器 MOSFET的閘極和漏電極的閘極和漏電極。電子熔斷器 IC透過檢測流過第二鏡像FET的電流來測量流過高壓側開關260的電流，該第二鏡像FET的尺寸僅為電子熔斷器MOSFET的一小部分，並且用作傳感透過電子熔斷器 MOSFET的電流的傳感FET。由於電子熔斷器 MOSFET和第二鏡像FET集成在同一晶片上，並且透過第二鏡像FET的電流可以直接從第二鏡像FET的源極檢測而不依賴R DS-on，電流測量不依賴於溫度，藉此消除溫度傳感功能，可以簡化電子熔斷器積體電路。
現在參考第2圖，SD電路280測量開關節點241保持高電平時的持續時間。功能輸入297的值對應於開關節點241保持高電平時的持續時間。當功能輸入297的值大於參考輸入295的值時，比較器292的輸出299標記故障信號。當高壓側開關260短路且低壓側開關240未接通時，持續時間增加。
第4圖表示在本發明示例中的波形圖。波形441與開關節點241處的電壓相關聯。參考常數495與參考輸入295相關聯。波形491與SD節點291相關聯。波形499與比較器292的輸出299相關聯。
在定時411，檢測到高壓側開關260短路。開關節點241處的電壓在長於定時閾值的持續時間內保持高。在第一個定時電路285中，電阻283在定時電路285中，電阻285在定時電路285中是常數。在第二個定時電路285中，電阻285在定時電路285中是常數，波形499標記故障信號，電子熔斷器 IC 290關閉電子熔斷器開關253。因此，當高壓側開關260接通或短於預定定時閾值的持續時間時，電子熔斷器解決方案網路保護負載。
本创作所属技术领域中具有通常知识者可以認識到，存在修改本發明公開的實施例的可能。例如，鍵合導線的數量可能會有所不同。本创作所属技术领域中具有通常知识者可以進行其他修改，並且所有這些修改都被認為屬於請求項所定義的本發明的範圍。
100:半導體封裝 110:引線框架 111:底面 112:第一晶片焊盤 113:延伸部分 114:第二晶片焊盤 115:邊緣 116:末端焊盤 129A:第四導電材料 129B:第五導電材料 129C:第六導電材料 130:電子熔斷器MOSFET 130D:汲極 130G:閘極 130S:源極 140:低側MOSFET 140D:汲極 140G:閘極電極 140S:源極 160:高側MOSFET 160D:汲極 160G:閘極 160S:源極 170:閘極驅動器IC 171:接合引線 179A:第一非導電材料 179B:第二非導電材料 180:電子熔斷器IC 190:模制封裝 198:金屬連接 199A:第一導電材料 199B:第二導電材料 199C:第三導電材料 200:降壓轉換器 201:電源 210:智能功率級（SPS）網路 240:低壓側開關 241:開關節點 250:電子熔斷器解決方案網路 251:可選的傳感電阻器 253:電子熔斷器開關 260:高壓側開關 270:閘極驅動器 280:SD電路 281:第一電路電阻器 283:第二電路電阻器 285:電路電容器 287:電路二極體 290:電子熔斷器積體電路（IC） 291:短路檢測（SD）節點 292:比較器 295:參考輸入 297:功能輸入 299:輸出 301:射穿情況 390:電流傳感放大器 411:定時 441:波形 491:波形 495:參考常數 499:波形
在本發明的示例中，第1A圖表示一種半導體封裝的俯視圖，第1B圖表示其剖面圖，第1C圖表示其另一個剖面圖。 第2圖表示在本發明的示例中，一種降壓轉換器的框圖。 第3圖表示在本發明的示例中，一種射穿情況。 第4圖表示在本發明的示例中，一種波形圖。

Claims (18)

  1. 一種半導體封裝，包括： 一個引線框，包括: 第一晶片焊盤； 第二晶片焊盤；以及 一個末端焊盤； 一個低壓側金氧半場效電晶體（MOSFET），被翻轉並連接到第一晶片焊盤，該低壓側MOSFET包括: 一個源極電極和一個閘極電極，在該低壓側MOSFET的正面；以及 一個汲極電極，在該低壓側MOSFET的底面； 一個電子熔斷器 MOSFET，連接到該第二晶片焊盤上，該電子熔斷器 MOSFET包括： 一個源極和一個閘極電極，在該電子熔斷器MOSFET的正面；以及 一個汲極電極，在該電子熔斷器MOSFET的底面； 一個高壓側MOSFET，連接到該電子熔斷器MOSFET，該高壓側MOSFET包括： 一個源極和一個閘極電極，在該高壓側MOSFET的正面；以及 一個汲極電極，在該高壓側MOSFET的底面，該高壓側MOSFET的汲極電極連接到該電子熔斷器MOSFET的源極電極； 一個金屬連接，連接該低壓側MOSFET的汲極電極和該高壓側MOSFET的源極電極； 一個閘極驅動器積體電路（IC），連接到該電子熔斷器MOSFET； 以及 一個成型封裝，封裝該低壓側MOSFET、該電子熔斷器MOSFET、該高壓側MOSFET、該金屬連接和該閘極驅動器IC。
  2. 如請求項1所述之半導體封裝，還包括一個電子熔斷器IC，連接到該閘極驅動器IC；其中該成型封裝還封裝該電子熔斷器IC。
  3. 如請求項1所述之半導體封裝，其中該引線框的底面暴露于該成型封裝。
  4. 如請求項1所述之半導體封裝，其中該金屬連接是透過第一導電材料以電氣和機械方式連接到該低壓側MOSFET的汲極的一個金屬夾； 其中金屬夾透過第二導電材料以電氣和機械方式連接到該高壓側MOSFET的源極；並且 其中金屬夾透過第三導電材料以電氣和機械方式連接到該引線框的末端焊盤。
  5. 如請求項4所述之半導體封裝，其中第一導電材料、第二導電材料和第三導電材料中的每種導電材料都是由一種焊錫膏材料製成的。
  6. 如請求項1所述之半導體封裝，還包括一個連接到該閘極驅動器IC的電子熔斷器IC；其中該成型封裝還封裝該電子熔斷器IC；其中該閘極驅動器IC透過第一非導電材料連接到該電子熔斷器MOSFET；並且其中該電子熔斷器IC透過第二非導電材料連接到該閘極驅動器IC。
  7. 如請求項6所述之半導體封裝，其中該第一非導電材料和該第二非導電材料中的每種非導電材料都是由一種環氧樹脂材料製成的。
  8. 如請求項1所述之半導體封裝，其中該低壓側MOSFET的閘極電極連接到該引線框的一個延伸部分；並且其中該引線框的延伸部分延伸到該引線框的一邊沿。
  9. 如請求項8所述之半導體封裝，其中一個或複數個接合引線將該閘極驅動器IC連接到該引線框的延伸部分。
  10. 一種降壓轉換器，包括： 一個智慧功率級（SPS）網路，包括 一個高壓側開關； 一個低壓側開關，該低壓側開關的汲極透過一個開關節點耦合到該高壓側開關的源極上；以及 一個閘極驅動器，耦合到該高壓側開關的閘極和該低壓側開關的閘極上；以及 一個電子熔斷器解決方案網路，包括： 一個電子熔斷器開關，該電子熔斷器開關的源極耦合到該高壓側開關的汲極； 一個電子熔斷器積體電路（IC），包括： 一個比較器，包括： 一個參考輸入端； 一個功能輸入端，耦合到短路探測（SD）節點上；以及 一個輸出端；以及 一個短路探測（SD）電路，耦合到電子熔斷器積體電路(IC)的短路探測（SD）節點上，該短路探測（SD）電路包括 一個第一電路電阻器，該第一電路電阻器的第一節點耦合到該開關節點上； 一個第二電路電阻器； 一個電路電容器；以及 一個電路二極體。
  11. 如請求項10所述之降壓轉換器， 其中該低壓側開關是一個第一金氧半場效電晶體（MOSFET）； 其中該高壓側開關是一個第二MOSFET；並且 其中該第一MOSFET的尺寸大於該第二MOSFET的尺寸，從而該高壓側開關具有比該低壓側開關更低的峰值電流承載能力。
  12. 如請求項11所述之降壓轉換器，其中電子熔斷器積體電路IC還包括一個電流傳感放大器，測量流經該高壓側開關的電流；並且 其中當流經該高壓側開關的電流大於預定義的值時，該電子熔斷器積體電路（IC）斷開電子熔斷器開關。
  13. 如請求項12所述之降壓轉換器，其中該電子熔斷器積體電路（IC）監控該電子熔斷器開關的導通電阻，以預測流經該高壓側開關的電流。
  14. 如請求項12所述之降壓轉換器，其中電子熔斷器解決方案網路還包括一個傳感電阻器，電流傳感放大器檢測該傳感電阻器上的電壓降，以測量流經該高壓側開關的電流。
  15. 如請求項12所述之降壓轉換器，其中該電子熔斷器開關包括一個溝槽MOSFET，該溝槽MOSFET帶有一個第二鏡像FET，集成為公共汲極MOSFETs。
  16. 如請求項12所述之降壓轉換器，其中當該高壓側開關短路並且該閘極驅動器繼續驅動該低壓側開關時，流經該高壓側開關的電流增大。
  17. 如請求項10所述之降壓轉換器，其中該短路探測（SD）電路測量開關節點保持在高電平的持續時間； 其中該功能輸入端的值對應開關節點保持在高電平的持續時間； 其中當該功能輸入端的值大於該參考輸入端的值時，該比較器的輸出端標記一個故障信號。
  18. 如請求項17所述之降壓轉換器，其中當該高壓側開關短路並且該低壓側開關沒有接通時，該持續時間增大。
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