TWI795100B - 具有改進的可靠性的半導體封裝 - Google Patents

具有改進的可靠性的半導體封裝 Download PDF

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TWI795100B
TWI795100B TW110144315A TW110144315A TWI795100B TW I795100 B TWI795100 B TW I795100B TW 110144315 A TW110144315 A TW 110144315A TW 110144315 A TW110144315 A TW 110144315A TW I795100 B TWI795100 B TW I795100B
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connection elements
rdl
metal layer
semiconductor device
active surface
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TW202224129A (zh
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張添昌
季彥良
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聯發科技股份有限公司
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Abstract

一種半導體器件包括具有主動表面、相對表面、在主動表面和相對表面之間延伸的垂直側壁以及設置在主動表面上的輸入/輸出(I/O)連接的半導體晶粒。再分佈層(RDL)設置在半導體晶粒的主動表面上。多個第一連接元件設置在RDL上。模塑膠包封半導體晶粒的相對表面和垂直側壁。模塑膠還覆蓋RDL並圍繞多個第一連接元件。互連基板安裝在多個第一連接元件和模塑膠上。

Description

具有改進的可靠性的半導體封裝
本發明總體上涉及半導體封裝領域。更具體地，本發明涉及具有改進的可靠性的晶圓級晶片級封裝(wafer-level chip-scale package，WLCSP)。
電子工業繼續依賴於半導體技術的進步以在緊湊的區域中實現高功能的設備。對於實現高功能設備的許多應用，需要將大量半導體器件集成到單個半導體晶圓中。隨著半導體晶圓的每給定面積的半導體器件數量的增加，製造過程變得更加困難。
半導體器件通常使用兩種複雜的製造工藝製造，即前端製造和後端製造，每個工藝都可能涉及數百個步驟。前端製造涉及在半導體晶圓上形成多個積體電路(IC)晶粒。每個IC晶粒通常是相同的，並且包含通過電連接主動和被動元件形成的電路。後端製造涉及從成品晶圓中分離出單個IC晶粒並封裝晶粒以提供結構支援和環境隔離。
IC晶粒的封裝在其最終性能中的作用越來越大。例如，在移動設備(即手機、平板電腦、筆記型電腦、遙控器等)中，多個晶圓級晶片級封裝(wafer-level chip-scale package，WLCSP)元件用於移動設備的組裝。WLCSP是真正的晶片級封裝，無需封裝基板，成本低。通過焊點(solder joint)直接的晶片到板的附接(attach)提供了低互連電感和電阻，以及改進的熱性能。這些特性使WLCSP封裝格式非常適合5G射頻(RF)應用，在這些應用中，最小化封裝尺寸和寄生效應(parasitics)以及熱性能至關重要。
由於晶片和板之間的不相似的特性，WLCSP的可靠性具有挑戰性。 需要提供可靠的WLCSP以及簡化且具有成本效益的方法，以用於形成這些封裝。
本發明的一個目的是提供一種具有改進的可靠性的晶粒的半導體封裝，以解決上述提及的現有技術的問題或缺點。
本發明的一個方面提供了一種半導體器件，其包括具有主動表面、相對表面、在主動表面和相對表面之間延伸的垂直側壁以及設置在主動表面上的輸入/輸出(I/O)連接。重分佈層(redistribution layer，RDL)設置在半導體晶粒的主動表面上以重新排列I/O連接。多個第一連接元件設置在RDL上。模塑膠(molding compound)包封半導體晶粒的相對表面和垂直側壁。模塑膠覆蓋RDL並圍繞多個第一連接元件。互連基板安裝在多個第一連接元件和模塑膠上。
根據一些實施例，RDL上的模塑膠的厚度小於多個第一連接元件中的每一個的高度，使得多個第一連接元件中的每一個的上部被暴露以進一步連接。
根據一些實施例，互連基板是雙層基板，該雙層基板包括在互連基板的芯部的第一表面上的第一金屬層和在互連基板的芯部的第二表面上的第二金屬層。
根據一些實施例，第一金屬層包括多個第一接合墊並且第二金屬層包括多個第二接合墊，其分別電性直接連接至多個第一連接元件。
根據一些實施例，第一金屬層通過多個電鍍通孔(plated through hole)與第二金屬層電連接。
根據一些實施例，RDL具有與半導體晶粒的垂直側壁基本齊平的垂直側壁。
根據一些實施例，半導體器件還包括設置在互連基板上的多個第二 連接元件。
根據一些實施例，多個第二連接元件中的每一個的球寬度大於多個第一連接元件中的每一個的球寬度。
根據一些實施例，多個第二連接元件與多個第一連接元件對齊。
根據一些實施例，所述多個第二連接元件的中心在平面的投影分別與所述多個第一連接元件的中心在所述平面的投影基本重疊。
根據一些實施例，多個第一連接元件中的每一個位於多個第二連接元件中的每一個的投影(projection)區域內。
本申請提供的半導體封裝具有改進的可靠性。
在閱讀了在各種附圖中示出的優選實施例的以下詳細描述和附圖之後，本發明的這些和其他目的對於所屬領域具有通常知識者來說無疑將變得顯而易見。
1:半導體封裝
10a:主動表面
10b:相對表面
10:半導體晶粒
101:接合墊
110s:垂直側壁
110:RDL
10s:垂直側壁
150:模塑膠
240:第二連接元件
120:第一連接元件
112、114:金屬互連層
114p:接合墊
113:通孔層
116:絕緣層
118:覆蓋層
118a:開口
210:第一金屬層
220:第二金屬層
220p、210p:接合墊
230:電鍍通孔
20:互連基板
200:芯部
200a:第一表面
200b:第二表面
W1:球寬度
W2:球寬度
附圖被包括以提供對本發明的進一步理解並且被併入並構成本說明書的一部分。附圖說明了本發明的實施例，並且與具體實施方式一起用於解釋本發明的原理。在圖中：第1圖是示出了根據本發明實施例的示例性WLCSP的示意性截面圖；第2圖是示出基板球與半導體晶粒上的球陣列的相對佈局的透視底視圖(perspective bottom view)；以及第3圖是WLCSP的一部分的放大截面圖。
在以下對本發明的實施例的詳細描述中，參考了附圖，並且其中通過說明的方式示出了可以實踐本發明的特定優選實施例。
這些實施例被詳細地描述以使得所屬領域具有通常知識者能夠實踐它們，並且應當理解，在不脫離本發明的精神和範圍的情況下可以利用其他實施例並且可以進行機械、化學、電氣和程式改變。因此，以下詳細描述不應被視為限制意義，並且本發明的實施例的範圍僅由所附請求項限定。
應當理解，當元件或層被稱為“在….上”、“連接到”或“耦接到”另一個元件或層時，它可以直接在另一個元件或層上、連接或耦接到另一個元件或層，或者通過中間元件或層在另一個元件或層上、連接或耦接到另一個元件或層。相反的，當元件被稱為“直接在….上”、“直接連接到”或“直接耦接到”另一個元件或層時，不存在中間元件或層。相同的數字指代相同的元件。如本文所用，術語“和/或”包括一個或多個相關聯的所列項目的任何和所有組合。
本發明實施例涉及半導體封裝。封裝可以包括晶圓級晶片級封裝(WLCSP)，該WLCSP的尺寸與分割出的(singulated)裸晶粒尺寸大致相同或略大於分割出的裸晶粒尺寸。如稍後將描述的，封裝包括包封(encapsulation)材料，該包封材料可以包括形成在其上的單個或多個包封層。包封材料用作保護層，防止或最小化對半導體晶粒或晶片的損壞。半導體晶粒可以包括但不限於記憶體器件、邏輯器件、通信器件、光電器件、數位訊號處理器(digital signal processor，DSP)、微控制器、片上系統(system-on-chip，SOC)或它們的組合。此類封裝可併入電子產品或設備中，例如智慧手機或電腦產品。
請參考第1圖至第3圖。第1圖示出根據本發明實施例的示例性WLCSP的示意性截面圖。第2圖是示出基板球和半導體晶粒上的球陣列的相對佈局的透視底視圖。第3圖是WLCSP的一部分的放大截面圖。如第1圖和第3圖所示，諸如 WLCSP的半導體封裝1包括具有主動表面10a和相對表面10b的半導體晶粒10。半導體晶粒10包括在主動表面10a和相對表面10b之間延伸的垂直側壁10s。至少一個接合墊(bond pad)101形成于半導體晶粒10的主動表面10a上。
根據本發明的一個實施例，半導體封裝1還包括設置在半導體晶粒10的主動表面10a上的重分佈層(RDL)110以重新安排在其上的輸入/輸出(I/O)連接。
根據本發明的一個實施例，RDL 110可以包括金屬互連層112、114，以及至少一個將金屬互連層112與金屬互連層114電連接的通孔層113。金屬互連層112可以電連接到半導體晶粒10的主動表面10a上的I/O連接101。金屬互連層114可以電連接到相應的接合墊114p。
根據本發明的實施例，RDL 110可以包括在金屬互連層112、114之間的至少一個絕緣層116。RDL 110還可以包括覆蓋(cap)層118，諸如氮化矽層(silicon nitride layer)、矽氧化層(silicon oxide layer)，或其組合。開口118a可以形成在覆蓋(cap)層118中以部分地暴露每個接合墊114p。根據本發明的實施例，RDL 110的垂直側壁110s與半導體晶粒10的垂直側壁10s基本齊平。
根據本發明的發明，第一連接元件120(例如焊球)分別設置在接合墊114p上。RDL 110上的第一連接元件120的示範性佈局在第2圖中示出。在第2圖中，第一連接元件120由虛線表示。為簡單起見，示出了5x5球陣列。然而，可以理解的是，第一連接元件120的數量和排列方式依賴於設計要求，並且在不同的實施例中可以變化。根據本發明的實施例，多個第一連接元件120中的每一個具有球寬W1。
根據本發明的實施例，半導體晶粒10的相對表面10b和垂直側壁10s由模塑膠150封裝。根據本發明的實施例，模塑膠150可以包括環氧樹脂(epoxy resin)和填料(filler)，但不限於此。根據本發明的一個實施例，模塑膠150可以覆蓋RDL 110並圍繞第一連接元件120。根據本發明的一個實施例，模塑膠150在 RDL 110上的厚度可以小於第一連接件120的高度，使得可以暴露出每個第一連接元件120的上部以進一步連接。
根據本發明的實施例，半導體封裝1還包括互連基板20，例如封裝基板、印刷電路板或仲介層基板，但不限於此。根據本發明的實施例，互連基板20為雙層基板，包括在互連基板20的芯部200的第一表面200a上的第一金屬層210和在互連基板20的芯部的第二表面200b上的第二金屬層220。
第一金屬層210包括多個接合墊210p。第二金屬層220包括多個接合墊220p，其直接電性連接第一連接元件120。第一金屬層210通過多個電鍍通孔230電性連接第二金屬層220。
根據本發明的實施例，第二連接元件240，例如焊球或銅柱凸塊等，分別設置于接合墊210p上。根據本發明的實施例，多個第二連接元件240的每一個的球寬度W2大於多個第一連接元件120的每一個的球寬度W1。如第1圖到第3圖所示，多個第二連接元件240分別與下面的多個第一連接元件120對齊。可選的，多個第二連接元件240的每一個的球寬度W2可以小於多個第一連接元件120的每一個的球寬度W1。或者，多個第二連接元件240中的一部分連接元件的球寬度W2大於多個第一連接元件中的一部分連接元件的球寬度W1，多個第二連接元件240中的一部分連接元件的球寬度W2小於多個第一連接元件中的一部分連接元件的球寬度W1。
請參考第2圖，多個第二連接元件240的中心在平面的投影分別與多個第一連接元件120的中心在平面的投影基本重疊，例如第2圖清楚的示出第二連接元件240的中心與第一連接元件120的中心完全重疊，且多個第一連接元件120中的每一個位於多個第二連接件240中的每一個的投影區域內以實現球對球(ball-to-ball)配置。
本發明實施例中，通過模塑膠包封半導體晶粒的相對表面和垂直側 壁，使得半導體晶粒不容易損壞，可以提高半導體封裝的可靠性。而且，通過將RDL層設置在晶粒的主動表面並使用球對球配置，實現信號傳輸，可以進一步提高了半導體封裝的可靠性。
在保留本發明的教導的同時所屬領域具有通常知識者將容易地觀察到可以對裝置和方法進行許多修改和改變。因此，上述描述應被解釋為僅受所附請求項的界限和範圍的限制。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1:半導體封裝
10a:主動表面
10b:相對表面
10:半導體晶粒
101:接合墊
110s:垂直側壁
110:RDL
10s:垂直側壁
120:第一連接元件
150:模塑膠
20:互連基板
240:第二連接元件
W1:球寬度
W2:球寬度

Claims (7)

  1. 一種半導體器件，包括：半導體晶粒，具有主動表面、相對表面、在所述主動表面和所述相對表面之間延伸的垂直側壁，以及設置在所述主動表面上的輸入/輸出I/O連接；重分佈層RDL，設置在所述半導體晶粒的所述主動表面上以重新排列所述I/O連接；多個第一連接元件，設置在所述RDL上；模塑膠，包封所述半導體晶粒的所述相對表面和所述垂直側壁，其中所述模塑膠覆蓋所述RDL並圍繞所述多個第一連接元件；以及互連基板，安裝在所述多個第一連接元件和所述模塑膠上；多個第二連接元件，設置在所述互連基板上；其中，所述互連基板包括第一金屬層和第二金屬層；所述第一金屬層包括多個第一接合墊，所述第二金屬層包括多個第二接合墊，所述多個第二接合墊分別電性直接連接所述多個第一連接元件；所述多個第一接合墊分別電性直接連接所述多個第二連接元件；所述多個第一接合墊中每個第一接合墊通過各自的電鍍通孔與對應的第二接合墊電性連接，設置在所述互連基板上的所述多個第二連接元件與所述多個第一連接元件對齊。
  2. 如請求項1所述的半導體器件，其中，所述RDL上的模塑膠的厚度小於所述多個第一連接元件中的每一個的高度，使得所述多個第一連接元件中的每一個的上部被暴露以供進一步連接。
  3. 如請求項1的半導體器件，其中，所述互連基板是雙層基板，所述雙層基板包括在所述互連基板的芯部的第一表面上的所述第一金屬層和在所述互連基板的芯部的第二表面上的所述第二金屬層。
  4. 如請求項1所述的半導體器件，其中，所述RDL具有垂直側壁，所 述RDL的垂直側壁與所述半導體晶粒的垂直側壁基本齊平。
  5. 如請求項1所述的半導體器件，其中，所述多個第一連接元件中的每一個是焊球，並且其中所述多個第二連接元件中的每一個是焊球，所述多個第二連接元件的焊球的球寬度大於所述多個第一連接元件的每一個的球寬度。
  6. 如請求項1所述的半導體裝置，其中，所述多個第二連接元件的中心在平面的投影分別與所述多個第一連接元件的中心在所述平面的投影基本重疊。
  7. 如請求項1所述的半導體裝置，其中，所述多個第一連接元件中的每一個均位於所述多個第二連接元件中的每一個的投影區域內。
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