TWI795043B - 帶電粒子線裝置 - Google Patents

帶電粒子線裝置 Download PDF

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Publication number
TWI795043B
TWI795043B TW110139005A TW110139005A TWI795043B TW I795043 B TWI795043 B TW I795043B TW 110139005 A TW110139005 A TW 110139005A TW 110139005 A TW110139005 A TW 110139005A TW I795043 B TWI795043 B TW I795043B
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TW
Taiwan
Prior art keywords
charged particle
sample
condition
light
electron beam
Prior art date
Application number
TW110139005A
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English (en)
Chinese (zh)
Other versions
TW202217999A (zh
Inventor
中村洋平
津野夏規
白崎保宏
庄子美南
三次将太
笹氣裕子
Original Assignee
日商日立全球先端科技股份有限公司
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Publication of TW202217999A publication Critical patent/TW202217999A/zh
Application granted granted Critical
Publication of TWI795043B publication Critical patent/TWI795043B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency

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  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110139005A 2020-10-26 2021-10-21 帶電粒子線裝置 TWI795043B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/040104 2020-10-26
PCT/JP2020/040104 WO2022091180A1 (ja) 2020-10-26 2020-10-26 荷電粒子線装置

Publications (2)

Publication Number Publication Date
TW202217999A TW202217999A (zh) 2022-05-01
TWI795043B true TWI795043B (zh) 2023-03-01

Family

ID=81383746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110139005A TWI795043B (zh) 2020-10-26 2021-10-21 帶電粒子線裝置

Country Status (5)

Country Link
US (1) US12573586B2 (https=)
JP (1) JP7377375B2 (https=)
KR (1) KR102794066B1 (https=)
TW (1) TWI795043B (https=)
WO (1) WO2022091180A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145015A1 (ja) * 2022-01-28 2023-08-03 株式会社日立ハイテク 検査装置および膜質検査方法
WO2023228338A1 (ja) * 2022-05-25 2023-11-30 株式会社日立ハイテク 荷電粒子線装置、計測方法
JP7218034B1 (ja) * 2022-11-04 2023-02-06 株式会社Photo electron Soul 局所観察方法、プログラム、記録媒体および電子線適用装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030094572A1 (en) * 2001-11-19 2003-05-22 Hitachi, Ltd. Inspection system and inspection process for wafer with circuit using charged-particle beam
US20110133066A1 (en) * 2008-09-16 2011-06-09 Mari Nozoe Pattern inspection device and method
TW201129795A (en) * 2003-05-09 2011-09-01 Ebara Corp Inspection method, inspection apparatus and electron beam apparatus
US20120126119A1 (en) * 2009-07-27 2012-05-24 Hitachi High-Technologies Corporation Charged-Particle-Beam Device
TW201419362A (zh) * 2006-09-12 2014-05-16 荏原製作所股份有限公司 荷電粒子束裝置及使用該裝置之半導體元件製造方法
US20150348750A1 (en) * 2012-12-28 2015-12-03 Hitachi High- Technologies Corporation Charged particle beam device and method for analyzing defect therein
US20200118893A1 (en) * 2017-12-27 2020-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
TW202024769A (zh) * 2018-10-19 2020-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於在多束檢測設備中對準電子束之系統及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955450B2 (ja) 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP4891036B2 (ja) * 2006-11-16 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体検査装置
JP5077538B2 (ja) * 2007-07-30 2012-11-21 株式会社島津製作所 Ｔｆｔアレイ検査装置
JP5770434B2 (ja) * 2010-06-24 2015-08-26 株式会社堀場製作所 電子顕微鏡装置
JP5744629B2 (ja) 2011-06-03 2015-07-08 株式会社日立ハイテクノロジーズ 電子顕微鏡及び電子線を用いた撮像方法
JP6117625B2 (ja) * 2013-06-07 2017-04-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電子線検査装置及び電子線検査方法
JP6025910B2 (ja) 2015-04-30 2016-11-16 株式会社日立ハイテクノロジーズ 電子線を用いた撮像方法および電子線装置
JP2018106832A (ja) 2016-12-22 2018-07-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、及び制御方法
JP6957641B2 (ja) * 2017-11-27 2021-11-02 株式会社日立ハイテク 荷電粒子線装置およびそれを用いた試料観察方法
US11393657B2 (en) * 2018-09-11 2022-07-19 Hitachi High-Tech Corporation Electron beam device
JP7189103B2 (ja) * 2019-08-30 2022-12-13 株式会社日立ハイテク 荷電粒子線装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030094572A1 (en) * 2001-11-19 2003-05-22 Hitachi, Ltd. Inspection system and inspection process for wafer with circuit using charged-particle beam
TW201129795A (en) * 2003-05-09 2011-09-01 Ebara Corp Inspection method, inspection apparatus and electron beam apparatus
TW201419362A (zh) * 2006-09-12 2014-05-16 荏原製作所股份有限公司 荷電粒子束裝置及使用該裝置之半導體元件製造方法
US20110133066A1 (en) * 2008-09-16 2011-06-09 Mari Nozoe Pattern inspection device and method
US20120126119A1 (en) * 2009-07-27 2012-05-24 Hitachi High-Technologies Corporation Charged-Particle-Beam Device
US20150348750A1 (en) * 2012-12-28 2015-12-03 Hitachi High- Technologies Corporation Charged particle beam device and method for analyzing defect therein
US20200118893A1 (en) * 2017-12-27 2020-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
TW202024769A (zh) * 2018-10-19 2020-07-01 荷蘭商Ａｓｍｌ荷蘭公司 用於在多束檢測設備中對準電子束之系統及方法

Also Published As

Publication number Publication date
US12573586B2 (en) 2026-03-10
JP7377375B2 (ja) 2023-11-09
KR102794066B1 (ko) 2025-04-14
US20230377837A1 (en) 2023-11-23
TW202217999A (zh) 2022-05-01
WO2022091180A1 (ja) 2022-05-05
JPWO2022091180A1 (https=) 2022-05-05
KR20230066104A (ko) 2023-05-12

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