KR102794066B1 - 하전 입자선 장치 - Google Patents

하전 입자선 장치 Download PDF

Info

Publication number
KR102794066B1
KR102794066B1 KR1020237012463A KR20237012463A KR102794066B1 KR 102794066 B1 KR102794066 B1 KR 102794066B1 KR 1020237012463 A KR1020237012463 A KR 1020237012463A KR 20237012463 A KR20237012463 A KR 20237012463A KR 102794066 B1 KR102794066 B1 KR 102794066B1
Authority
KR
South Korea
Prior art keywords
charged particle
sample
light
particle beam
conditions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237012463A
Other languages
English (en)
Korean (ko)
Other versions
KR20230066104A (ko
Inventor
요헤이 나까무라
나쯔끼 즈노
야스히로 시라사끼
미나미 쇼우지
쇼따 미쯔기
유꼬 사사끼
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20230066104A publication Critical patent/KR20230066104A/ko
Application granted granted Critical
Publication of KR102794066B1 publication Critical patent/KR102794066B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency

Landscapes

  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020237012463A 2020-10-26 2020-10-26 하전 입자선 장치 Active KR102794066B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/040104 WO2022091180A1 (ja) 2020-10-26 2020-10-26 荷電粒子線装置

Publications (2)

Publication Number Publication Date
KR20230066104A KR20230066104A (ko) 2023-05-12
KR102794066B1 true KR102794066B1 (ko) 2025-04-14

Family

ID=81383746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237012463A Active KR102794066B1 (ko) 2020-10-26 2020-10-26 하전 입자선 장치

Country Status (5)

Country Link
US (1) US12573586B2 (https=)
JP (1) JP7377375B2 (https=)
KR (1) KR102794066B1 (https=)
TW (1) TWI795043B (https=)
WO (1) WO2022091180A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145015A1 (ja) * 2022-01-28 2023-08-03 株式会社日立ハイテク 検査装置および膜質検査方法
WO2023228338A1 (ja) * 2022-05-25 2023-11-30 株式会社日立ハイテク 荷電粒子線装置、計測方法
JP7218034B1 (ja) * 2022-11-04 2023-02-06 株式会社Photo electron Soul 局所観察方法、プログラム、記録媒体および電子線適用装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151483A (ja) 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP2012009247A (ja) 2010-06-24 2012-01-12 Topcon Corp 電子顕微鏡装置
JP2015135833A (ja) * 2015-04-30 2015-07-27 株式会社日立ハイテクノロジーズ 電子線を用いた撮像方法および電子線装置
WO2019102603A1 (ja) 2017-11-27 2019-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた試料観察方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955450B2 (ja) 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
TWI485742B (zh) * 2006-09-12 2015-05-21 荏原製作所股份有限公司 荷電粒子束裝置及使用該裝置之半導體元件製造方法
JP4891036B2 (ja) * 2006-11-16 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体検査装置
JP5077538B2 (ja) * 2007-07-30 2012-11-21 株式会社島津製作所 Ｔｆｔアレイ検査装置
JP2010073703A (ja) * 2008-09-16 2010-04-02 Hitachi High-Technologies Corp パターンの検査装置、およびパターンの検査方法
JP5473453B2 (ja) * 2009-07-27 2014-04-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5744629B2 (ja) 2011-06-03 2015-07-08 株式会社日立ハイテクノロジーズ 電子顕微鏡及び電子線を用いた撮像方法
TW201432253A (zh) * 2012-12-28 2014-08-16 日立全球先端科技股份有限公司 帶電粒子束裝置及其缺陷分析方法
JP6117625B2 (ja) * 2013-06-07 2017-04-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電子線検査装置及び電子線検査方法
JP2018106832A (ja) 2016-12-22 2018-07-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、及び制御方法
US10510623B2 (en) * 2017-12-27 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
US11393657B2 (en) * 2018-09-11 2022-07-19 Hitachi High-Tech Corporation Electron beam device
KR102660825B1 (ko) * 2018-10-19 2024-04-26 에이에스엠엘 네델란즈 비.브이. 멀티 빔 검사 장치에서 전자 빔들을 정렬하기 위한 시스템 및 방법
JP7189103B2 (ja) * 2019-08-30 2022-12-13 株式会社日立ハイテク 荷電粒子線装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151483A (ja) 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP2012009247A (ja) 2010-06-24 2012-01-12 Topcon Corp 電子顕微鏡装置
JP2015135833A (ja) * 2015-04-30 2015-07-27 株式会社日立ハイテクノロジーズ 電子線を用いた撮像方法および電子線装置
WO2019102603A1 (ja) 2017-11-27 2019-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた試料観察方法

Also Published As

Publication number Publication date
US12573586B2 (en) 2026-03-10
JP7377375B2 (ja) 2023-11-09
US20230377837A1 (en) 2023-11-23
TW202217999A (zh) 2022-05-01
TWI795043B (zh) 2023-03-01
WO2022091180A1 (ja) 2022-05-05
JPWO2022091180A1 (https=) 2022-05-05
KR20230066104A (ko) 2023-05-12

Similar Documents

Publication Publication Date Title
US10840060B2 (en) Scanning electron microscope and sample observation method
KR102794066B1 (ko) 하전 입자선 장치
JP3955450B2 (ja) 試料検査方法
JP5744629B2 (ja) 電子顕微鏡及び電子線を用いた撮像方法
US6586952B2 (en) Method of inspecting pattern and inspecting instrument
TW202536914A (zh) 帶電粒子束裝置及相關的非暫時性電腦可讀媒體
WO2010029700A1 (ja) 荷電粒子線装置
US20200294764A1 (en) Charged particle beam apparatus and sample observation method using the same
US20190051490A1 (en) Charged particle beam device
TWI806130B (zh) 帶電粒子束裝置
US20240151665A1 (en) Inspection system
KR20230041754A (ko) 검사 시스템
US11307250B2 (en) Creating time-resolved emission images of integrated circuits using a single-point single-photon detector and a scanning system
JP2005061998A (ja) 表面電位測定方法及び試料観察方法
JP5823136B2 (ja) 走査型荷電粒子顕微鏡及び試料観察方法
JP2009252995A (ja) 半導体検査方法
US8704528B2 (en) Method and apparatus for inspecting electronic component
US20250362255A1 (en) Charged Particle Beam System and Sample Evaluation Information Generation Method
WO2026013751A1 (ja) 荷電粒子線装置および試料の検査方法
TW202548834A (zh) 檢查系統
WO2024029060A1 (ja) 試料測定装置
KR20240157726A (ko) 하전 입자선 장치, 계측 방법
JP2008004367A (ja) 電子ビーム寸法測定装置及び電子ビーム寸法測定方法
JP2007305901A (ja) 半導体検査装置および半導体装置の検査方法
JP2004151119A (ja) パターン欠陥検査方法および検査装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230412

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240621

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250206

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20250407

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20250408

End annual number: 3

Start annual number: 1

PG1601 Publication of registration