TWI793818B - Chip testing board and testing method and system thereof - Google Patents
Chip testing board and testing method and system thereof Download PDFInfo
- Publication number
- TWI793818B TWI793818B TW110139139A TW110139139A TWI793818B TW I793818 B TWI793818 B TW I793818B TW 110139139 A TW110139139 A TW 110139139A TW 110139139 A TW110139139 A TW 110139139A TW I793818 B TWI793818 B TW I793818B
- Authority
- TW
- Taiwan
- Prior art keywords
- chip
- test
- signal
- main signal
- holes
- Prior art date
Links
Images
Abstract
Description
本揭露涉及一種晶片測試板與其測試方法和系統。The present disclosure relates to a wafer test board and its testing method and system.
現有的 LCD 手機顯示驅動晶片、或是穿戴手錶的顯示屏、大尺寸電視顯示驅動晶片,這些設計廠與測試廠在單體晶片(顯示器驅動晶片)測試時,為了測試單體晶片的電性或是解析,都會透過拉線的方式,從晶片上的輸出端或是輸入端拉到晶片測試板的測試點上,並透過測試板周邊過孔(Via)走線,連接到使用者測試環境上,所以在訊號傳輸時,這樣的過孔設計對訊號都會有電容性與電感性的產生,影響了高速訊號的完整性。再者,現有的驅動 IC 晶片的 COB(chip on board) 設計都是為了方便共用性與設計簡單與方便使用,但隨著時代的演變,驅動 IC的晶片訊號速度越來越快,傳統 COB 測試應用已經無法滿足測試訊號完整性的條件。Existing LCD mobile phone display driver chips, or display screens for wearable watches, and large-size TV display driver chips, these design factories and test factories test the single chip (display driver chip) in order to test the electrical properties of the single chip or For analysis, it will be pulled from the output terminal or input terminal on the chip to the test point of the chip test board through the way of pulling wires, and connected to the user's test environment through the vias (Via) around the test board. , so when the signal is transmitted, such a via design will have capacitive and inductive effects on the signal, which will affect the integrity of the high-speed signal. Furthermore, the COB (chip on board) design of the existing driver IC chip is all for the convenience of commonality and simple design and convenient use. However, with the evolution of the times, the chip signal speed of the driver IC is getting faster and faster. The traditional COB test The application can no longer meet the conditions for testing signal integrity.
因此,本揭露提出一種晶片測試板與其測試方法和系統,以解決晶片的高速訊號的測試時,因使用過孔(via)測試,而產生電容性與電感性的干擾,影響了高速訊號的完整性的問題。Therefore, this disclosure proposes a chip test board and its testing method and system to solve the problem of capacitive and inductive interference due to the use of via testing when testing high-speed signals on chips, which affects the integrity of high-speed signals. sex issue.
本揭露之一實施例提供一種晶片測試板,用於依主要訊號及次要訊號測試晶片,包含:本體,具有複數個貫通孔連通該本體之二側;晶片測試區,設置於本體之一側;以及主要訊號連接器,設置於本體之同一側,用於不經過該些貫通孔而連接該晶片測試區;其中,晶片測試區用於連接晶片,並通過主要訊號連接器對晶片進行至少一主要訊號的測試。An embodiment of the present disclosure provides a chip test board for testing a chip according to a main signal and a secondary signal, comprising: a body with a plurality of through holes connecting two sides of the body; a chip test area set on one side of the body ; and the main signal connector, which is arranged on the same side of the body, is used to connect the chip test area without going through the through holes; wherein, the chip test area is used to connect the chip, and perform at least one operation on the chip through the main signal connector. Main signal test.
本揭露之一實施例提供一種晶片測試系統,包含:晶片測試板;晶片,設置於晶片測試區;主要訊號測試平台,用以提供主要訊號;以及次要訊號測試平台,用以提供次要訊號,其中,晶片測試板用於依主要訊號及次要訊號測試晶片,包含:本體,具有複數個貫通孔連通本體之二側;晶片測試區,設置於本體之一側;以及主要訊號連接器,設置於本體之同一側,用於不經過貫通孔而連接晶片測試區;其中,晶片測試區用於連接晶片,並通過主要訊號連接器對晶片進行至少一主要訊號的測試。An embodiment of the present disclosure provides a chip test system, including: a chip test board; a chip set in a chip test area; a main signal test platform for providing a main signal; and a secondary signal test platform for providing a secondary signal , wherein the chip test board is used to test the chip according to the main signal and the secondary signal, including: a body with a plurality of through holes connecting the two sides of the body; a chip test area set on one side of the body; and a main signal connector, It is arranged on the same side of the main body, and is used for connecting the chip test area without passing through holes; wherein, the chip test area is used for connecting the chip, and testing the chip for at least one main signal through the main signal connector.
本揭露之一實施例提供一種晶片測試方法,包含下列步驟:提供晶片測試板;設置該晶片於該晶片測試區;以及通過該主要訊號連接器對該晶片進行至少一主要訊號測試,其中,晶片測試板用於依主要訊號及次要訊號測試晶片,包含:本體,具有複數個貫通孔連通本體之二側;晶片測試區,設置於本體之一側;以及主要訊號連接器,設置於本體之同一側,用於不經過貫通孔而連接晶片測試區;其中,晶片測試區用於連接晶片,並通過主要訊號連接器對晶片進行至少一主要訊號的測試。An embodiment of the present disclosure provides a chip testing method, comprising the following steps: providing a chip test board; setting the chip in the chip test area; and performing at least one main signal test on the chip through the main signal connector, wherein the chip The test board is used to test the chip according to the main signal and the secondary signal, including: the main body, which has a plurality of through holes connecting the two sides of the main body; the chip test area, which is set on one side of the main body; and the main signal connector, which is set on the main body The same side is used for connecting the chip testing area without passing through holes; wherein, the chip testing area is used for connecting the chip, and testing the chip for at least one main signal through the main signal connector.
為更進一步瞭解本揭露的特徵及技術內容,請參閱以下有關本揭露的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本揭露加以限制。In order to further understand the features and technical content of the disclosure, please refer to the following detailed description and drawings related to the disclosure. However, the provided drawings are only for reference and illustration, and are not intended to limit the disclosure.
圖1顯示根據本揭露一實施例的晶片測試板。如圖1所示,本揭露的晶片測試板1,用於依主要訊號及次要訊號測試晶片13,晶片測試板1,包含:本體10,具有複數個貫通孔101連通本體10之二側;晶片測試區11,設置於本體10之一側;以及主要訊號連接器12,設置於本體10之同一側,用於不經過該些貫通孔101而連接該晶片測試區11;其中,晶片測試區11用於連接晶片13,並通過主要訊號連接器12對晶片13進行至少一主要訊號的測試。特別是,晶片測試區11通過主要訊號連接器12接收主要訊號並傳輸至晶片13,晶片13響應主要訊號產生回饋訊號並通過主要訊號連接器12輸出以對晶片13進行主要訊號測試。此外,晶片測試區11通過複數貫通孔101接收次要訊號並傳輸至晶片13,晶片13響應次要訊號產生回應訊號並通過貫通孔101輸出以對晶片13進行次要訊號測試。FIG. 1 shows a wafer test board according to an embodiment of the present disclosure. As shown in FIG. 1 , the
本揭露的晶片測試區11包含:複數測試點111,設置於晶片測試板1的第一表面1a,且複數測試點環繞晶片13測試區11周邊進行分佈與配置;複數測試針112,設置於晶片測試板1的第二表面1b,該些複數測試針112分別對應連接該些測試點111;其中,該些貫通孔101分別連接於該些測試針112及該些測試點111之間。此外,晶片測試區11通過複數測試針112、複數貫通孔101及複數測試點111接收次要訊號並傳輸至晶片13;晶片13響應次要訊號產生回應訊號並通過複數測試針112、複數貫通孔101及複數測試點111輸出以對晶片13進行次要訊號測試。特別是,主要訊號的傳輸速率大於百兆位元每秒(100Mbps),例如,網路傳輸訊號,資料傳輸訊號或其他具有高速或高頻的訊號。次要訊號的傳輸速率低於百兆位元每秒(100Mbps),例如,電源訊號等其他低速或低頻訊號。The
圖2顯示根據本揭露一實施例之晶片測試系統。請同時參照圖1,本揭露之晶片測試系統2包含:晶片13設置於晶片測試區11;主要訊號測試平台14,用以提供主要訊號;以及次要訊號測試平台15,用以提供次要訊號。晶片測試系統2還包含:晶片測試板1,晶片測試板1包含:本體10,具有複數個貫通孔101連通本體10之二側;晶片測試區11,設置於本體10之一側;以及主要訊號連接器12,設置於本體10之同一側,用於不經過該些貫通孔101而連接晶片測試區11;其中,晶片測試區11用於連接晶片13,並通過主要訊號連接器12對晶片13進行至少一主要訊號的測試。特別是,晶片測試區11通過主要訊號連接器12接收主要訊號並傳輸至晶片13,晶片13響應主要訊號產生回饋訊號並通過主要訊號連接器12輸出以對晶片13進行主要訊號測試。此外,晶片測試區11通過複數貫通孔101接收次要訊號並傳輸至晶片13,晶片13響應次要訊號產生回應訊號並通過貫通孔101輸出以對晶片13進行次要訊號測試。FIG. 2 shows a wafer testing system according to an embodiment of the present disclosure. Please refer to FIG. 1 at the same time, the
本揭露的晶片測試區11包含:複數測試點111,設置於晶片測試板1的第一表面1a,且複數測試點環繞晶片13測試區11周邊進行分佈與配置;複數測試針112,設置於晶片測試板1的第二表面1b,該些複數測試針112分別對應連接該些測試點111;其中,該些貫通孔101分別連接於該些測試針112及該些測試點111之間。此外,晶片測試區11通過複數測試針112、複數貫通孔101及複數測試點111接收次要訊號並傳輸至晶片13;晶片13響應次要訊號產生回應訊號並通過複數測試針112、複數貫通孔101及複數測試點111輸出以對晶片13進行次要訊號測試。特別是,主要訊號的傳輸速率大於百兆位元每秒(100Mbps),例如,網路傳輸訊號,資料傳輸訊號或其他具有高速或高頻的訊號。次要訊號的傳輸速率低於百兆位元每秒(100Mbps),例如,電源訊號等其他低速或低頻訊號。The
圖3顯示根據本揭露之一實施例之次要訊號測試方塊圖。如圖3所示,當晶片13與複數點測試點111相連接且進行次要訊號測試時,次要訊號測試平台15可由測試針傳輸至晶片13,而晶片13接收次要訊號時,會產生回應訊號並通過測試針112傳輸至次要測試平台15,以對晶片13進行次要訊號測試。 圖4示根據本揭露之另一實施例之次要訊號測試方塊圖。如圖4所示,當晶片不與複數點測試點相連接且進行次要訊號測試時,可通過貫通孔101或其他貫通孔113連接傳輸線L至次要測試平台15,次要訊號測試平台15可由通過貫通孔101或其他貫通孔113的連接線L傳輸至晶片13,而晶片13接收次要訊號時,會產生回應訊號並通過貫通孔101或其他貫通孔113的連接線L傳輸至次要測試平台15,以對晶片13進行次要訊號測試。FIG. 3 shows a block diagram of a secondary signal test according to an embodiment of the disclosure. As shown in Figure 3, when the
圖5顯示根據本揭露之一實施例之整合訊號測試平台圖。如圖5所示,主要訊號由整合訊號測試平台141產生,並通過整合訊號測試平台141傳輸至該晶片13,當晶片13接收主要訊號時,會產生回饋訊號並通過主要訊號連接器12傳輸至整合訊號測試平台141,以對晶片13進行主要訊號測試。次要訊號亦由整合訊號測試平台141產生,並通過貫通孔113或複數測試針112傳輸至晶片13,當晶片13接收次要訊號時,會產生回應訊號並通過貫通孔101或其他貫通孔113或複數測試針112傳輸至整合訊號測試平台141,以對晶片13進行次要訊號測試。特別是,主要訊號的傳輸速率大於百兆位元每秒(100Mbps),例如,網路傳輸訊號,資料傳輸訊號或其他具有高速或高頻的訊號。次要訊號的傳輸速率低於百兆位元每秒(100Mbps),例如,電源訊號等其他低速或低頻訊號。此外,請參照圖5與圖3,當晶片13與複數點測試點111相連接且進行次要訊號測試時,整合訊號測試平台141可由測試針傳輸至晶片13,而晶片13接收次要訊號時,會產生回應訊號並通過測試針112傳輸至整合訊號測試平台141,以對晶片13進行次要訊號測試。或者是,請同時參照圖5與圖4,當晶片13不與複數點測試點111相連接且進行次要訊號測試時,可通過貫通孔101或其他貫通孔113連接傳輸線L至次要整合訊號測試平台141,次要訊號測試平台15可由通過貫通孔101或其他貫通孔113的連接線L傳輸至晶片13,而晶片13接收次要訊號時,會產生回應訊號並通過貫通孔101或其他貫通孔113的連接線L傳輸至整合訊號測試平台141,以對晶片13進行次要訊號測試。FIG. 5 shows a diagram of an integrated signal test platform according to an embodiment of the present disclosure. As shown in Figure 5, the main signal is generated by the integrated
圖6顯示根據本揭露之一實施例之晶片測試方法流程圖。如圖6所示,並同時參照圖1,本揭露的晶片測試方法,包含下列步驟:提供晶片測試板1(S601);設置晶片13於晶片測試區11(S602);以及通過主要訊號連接器12對晶片13進行至少一主要訊號測試(S603)。前述晶片測試板1包含:本體10,具有複數個貫通孔101連通本體10之二側;晶片測試區11,設置於本體10之一側;以及主要訊號連接器12,設置於本體10之同一側,用於不經過該些貫通孔101而連接晶片測試區11;其中,晶片測試區11用於連接晶片13,並通過主要訊號連接器12對晶片13進行至少一主要訊號的測試。特別是,晶片測試區11通過主要訊號連接器12接收主要訊號並傳輸至晶片13,晶片13響應主要訊號產生回饋訊號並通過主要訊號連接器12輸出以對晶片13進行主要訊號測試。此外,晶片測試區11通過複數貫通孔101接收次要訊號並傳輸至晶片13,晶片13響應次要訊號產生回應訊號並通過貫通孔101輸出以對晶片13進行次要訊號測試。FIG. 6 shows a flowchart of a wafer testing method according to an embodiment of the present disclosure. As shown in Figure 6, and referring to Figure 1 at the same time, the wafer testing method of the present disclosure includes the following steps: providing a wafer testing board 1 (S601); setting the
特別是,主要訊號測試步驟包含下列步驟:由主要訊號測試平台14產生主要訊號;通過主要訊號連接器12傳輸主要訊號至晶片13;以晶片13響應主要訊號時產生回饋訊號;以及通過主要訊號連接器12傳輸回饋訊號至主要訊號測試平台14。此外,本揭露的晶片測試方法進一步包含一次要訊號測試步驟,包含下列步驟:由次要訊號測試平台15產生次要訊號;通過該些貫通孔101傳輸次要訊號至晶片13;以晶片13響應次要訊號時產生回應訊號;以及通過該些貫通孔101傳輸回饋訊號至主要訊號測試平台14。In particular, the main signal testing step includes the following steps: generating the main signal from the main
本揭露的晶片測試區11還包含:複數測試點111,設置於晶片測試板1的第一表面1a,且複數測試點環繞晶片13測試區11周邊進行分佈與配置;複數測試針112,設置於晶片測試板1的第二表面1b,該些複數測試針112分別對應連接該些測試點111;其中,該些貫通孔101分別連接於該些測試針112及該些測試點111之間。此外,晶片測試區11通過複數測試針112、複數貫通孔101及複數測試點111接收次要訊號並傳輸至晶片13;晶片13響應次要訊號產生回應訊號並通過複數測試針112、複數貫通孔101及複數測試點111輸出以對晶片13進行次要訊號測試。特別是,主要訊號的傳輸速率大於百兆位元每秒(100Mbps),例如,網路傳輸訊號,資料傳輸訊號或其他具有高速或高頻的訊號。次要訊號的傳輸速率低於百兆位元每秒(100Mbps),例如,電源訊號等其他低速或低頻訊號。The
本揭露的晶片測試板與其測試方法是為現有技術的測試板高速訊號應用設計裡,通孔本身存在著對地的寄生電容與電感,過孔的寄生電容與電感會給電路造成的主要影響是延長了信號的上升時間,降低了電路的速度與高速訊號的完整性。因此,本揭露的晶片測試板與測試方法在主要訊號上不使用過孔的設計,直接透過高速連接器連接其高速訊號,保持高速訊號的完整性。The chip test board and its test method disclosed in this disclosure are designed for the high-speed signal application of the test board in the prior art. The through hole itself has parasitic capacitance and inductance to the ground. The main impact of the parasitic capacitance and inductance of the via hole on the circuit is The rise time of the signal is prolonged, reducing the speed of the circuit and the integrity of the high-speed signal. Therefore, the chip test board and testing method disclosed herein do not use via design for main signals, and directly connect the high-speed signals through high-speed connectors to maintain the integrity of the high-speed signals.
本揭露已由上述相關實施例加以描述,然而上述實施例僅為實施本揭露之範例。必需指出的是,已揭露之實施例並未限制本揭露之範圍。相反地,包含於申請專利範圍之精神及範圍之修改及均等設置均包含於本揭露之範圍內。The present disclosure has been described by the above-mentioned related embodiments, but the above-mentioned embodiments are only examples for implementing the present disclosure. It must be pointed out that the disclosed embodiments do not limit the scope of this disclosure. On the contrary, modifications and equivalent arrangements included in the spirit and scope of the patent claims are included in the scope of the present disclosure.
1:測試板
11:測試區
12:連接器
13:晶片
101:貫通孔
111:測試點
112:測試針
113:貫通孔
1a、1b:表面
14、15、141:測試平台
S601、S602、S603:步驟1: Test board
11: Testing area
12: Connector
13: Wafer
101: Through hole
111: Test point
112: Test needle
113: through
圖1顯示根據本揭露一實施例的晶片測試板。FIG. 1 shows a wafer test board according to an embodiment of the present disclosure.
圖2顯示根據本揭露一實施例之晶片測試系統。FIG. 2 shows a wafer testing system according to an embodiment of the present disclosure.
圖3顯示根據本揭露之一實施例之次要訊號測試方塊圖。FIG. 3 shows a block diagram of a secondary signal test according to an embodiment of the disclosure.
圖4顯示根據本揭露之另一實施例之次要訊號測試方塊圖。FIG. 4 shows a block diagram of a secondary signal test according to another embodiment of the disclosure.
圖5顯示根據本揭露之一實施例之整合訊號測試平台圖。FIG. 5 shows a diagram of an integrated signal test platform according to an embodiment of the present disclosure.
圖6顯示根據本揭露之一實施例之晶片測試方法流程圖。FIG. 6 shows a flowchart of a wafer testing method according to an embodiment of the present disclosure.
1:測試板 1: Test board
11:測試區 11: Testing area
12:連接器 12: Connector
13:晶片 13: Wafer
101:貫通孔 101: Through hole
111:測試點 111: Test point
112:測試針 112: Test needle
113:貫通孔 113: through hole
1a、1b:表面 1a, 1b: surface
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110139139A TWI793818B (en) | 2021-10-21 | 2021-10-21 | Chip testing board and testing method and system thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110139139A TWI793818B (en) | 2021-10-21 | 2021-10-21 | Chip testing board and testing method and system thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI793818B true TWI793818B (en) | 2023-02-21 |
TW202318018A TW202318018A (en) | 2023-05-01 |
Family
ID=86689285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110139139A TWI793818B (en) | 2021-10-21 | 2021-10-21 | Chip testing board and testing method and system thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI793818B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI702410B (en) * | 2019-09-20 | 2020-08-21 | 中華精測科技股份有限公司 | Testing device |
TWI705255B (en) * | 2019-09-20 | 2020-09-21 | 中華精測科技股份有限公司 | Testing device for testing chip |
US20210048452A1 (en) * | 2019-08-15 | 2021-02-18 | Mpi Corporation | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
TW202109051A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
TW202109050A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
-
2021
- 2021-10-21 TW TW110139139A patent/TWI793818B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210048452A1 (en) * | 2019-08-15 | 2021-02-18 | Mpi Corporation | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
TW202109051A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
TW202109050A (en) * | 2019-08-15 | 2021-03-01 | 旺矽科技股份有限公司 | Probe head for high frequency signal test and medium or low frequency signal test at the same time |
TWI702410B (en) * | 2019-09-20 | 2020-08-21 | 中華精測科技股份有限公司 | Testing device |
TWI705255B (en) * | 2019-09-20 | 2020-09-21 | 中華精測科技股份有限公司 | Testing device for testing chip |
Also Published As
Publication number | Publication date |
---|---|
TW202318018A (en) | 2023-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2449799A (en) | Passive impedance equalization of high speed serial links | |
CN206413247U (en) | A kind of electronic circuit | |
US9537462B2 (en) | Communication circuit with impedance matching | |
US9722643B2 (en) | Enhanced echo cancellation in full-duplex communication | |
US20190050519A1 (en) | Die interface enabling 2.5 d device-level static timing analysis | |
US10901934B2 (en) | USB integrated circuit | |
TWI793818B (en) | Chip testing board and testing method and system thereof | |
US8738818B2 (en) | Apparatus and method for analyzing bidirectional data exchanged between two electronic devices | |
US11308014B1 (en) | Bi-directional signal transmission connection cable | |
JP2005260066A (en) | Flexible substrate and electronic apparatus | |
Pandey et al. | Signal Integrity and Compliance Test of DSI and CSI2 Serial Interface over MIPI D-PHY | |
CN115358171A (en) | FPGA prototype verification method and verification device of HDMI TX controller | |
CN205545720U (en) | Signal connection and transmission device | |
TWI410637B (en) | Area array probe card | |
CN110781640B (en) | Packaging trace design to eliminate reflections | |
CN113687206B (en) | Chip test board, chip test system and chip test method | |
TWI795097B (en) | Probe card device and testing equipment thereof | |
US8469736B2 (en) | Audio test cable | |
WO2020010863A1 (en) | Method for designing layout at gold fingers of printed circuit board and printed circuit board for server | |
TWI417733B (en) | Structure and method for transmitting signals of pci express | |
CN216670712U (en) | PCIe (peripheral component interface express) adapter card and communication product testing device | |
JPH11212672A (en) | Information processor, liquid crystal display device, integrated circuit, wiring board and production of information processor | |
TWI618384B (en) | An electronic device and method for debugging modem | |
CN217064111U (en) | Power supply network for a chip and electronic device | |
US20220197849A1 (en) | High speed on die shared bus for multi-channel communication |