TWI788222B - extension device - Google Patents
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- TWI788222B TWI788222B TW111104875A TW111104875A TWI788222B TW I788222 B TWI788222 B TW I788222B TW 111104875 A TW111104875 A TW 111104875A TW 111104875 A TW111104875 A TW 111104875A TW I788222 B TWI788222 B TW I788222B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/04—Cleaning by suction, with or without auxiliary action
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Abstract
本發明之擴展裝置具備:擴展部,其於第1位置擴展片狀構件;移動機構,其於已藉由擴展部擴展了片狀構件之狀態下,使擴展部沿著水平方向自第1位置移動至第2位置;及熱收縮部,其於第2位置加熱片狀構件之晶圓周圍之部分之鬆弛部,使之收縮。The expansion device of the present invention is provided with: an expansion part, which expands the sheet-like member at the first position; a moving mechanism, which makes the expansion part move from the first position along the horizontal direction in the state where the sheet-like member has been expanded by the expansion part. moving to the second position; and the heat shrinking part, which heats the slack part of the part around the wafer of the sheet member at the second position to make it shrink.
Description
本發明係關於一種擴展裝置,尤其關於一種將貼附有晶圓及環狀構件之片狀構件擴展之擴展裝置。The present invention relates to an expansion device, in particular to an expansion device for expanding a sheet-shaped component attached with a wafer and a ring-shaped component.
先前,已知一種將貼附有晶圓及環狀構件之片狀構件擴展之擴展裝置。此種擴展裝置例如於日本專利第4288392號公報中有所揭示。Conventionally, there is known an expanding device that expands a sheet member to which a wafer and a ring member are attached. Such an expansion device is disclosed in Japanese Patent No. 4288392, for example.
上述日本專利第4288392號公報中揭示了一種將貼附有晶圓及包圍晶圓之環狀框架(環狀構件)之黏著片(片狀構件)擴展之擴展裝置。該擴展裝置具備用以擴展黏著片之伸縮台及框架夾。於該擴展裝置中,在已藉由框架夾固定框架之狀態下,藉由伸縮台將黏著片之貼附有晶圓之部分向上方抬起,藉此拉伸黏著片而將黏著片擴展。又,該擴展裝置進而具備用以使因擴展而產生於黏著片上之黏著片之鬆弛部熱收縮(加熱收縮)之噴射管。於該擴展裝置中,自噴射管向黏著片之鬆弛部噴射熱風,藉此使黏著片之鬆弛部熱收縮。又,於該擴展裝置中,黏著片之擴展與黏著片之熱收縮係於相同之位置進行。The aforementioned Japanese Patent No. 4288392 discloses an expanding device that expands an adhesive sheet (sheet member) attached to a wafer and a ring frame (ring member) surrounding the wafer. The expansion device is provided with a telescopic platform and a frame clamp for expanding the adhesive sheet. In this expanding device, in a state where the frame is fixed by the frame clips, the portion of the adhesive sheet to which the wafer is attached is lifted upward by the telescopic stage, thereby stretching the adhesive sheet to expand the adhesive sheet. In addition, the expansion device further includes a spray tube for thermally shrinking (heat shrinking) the slack portion of the adhesive sheet generated on the adhesive sheet due to expansion. In this expanding device, hot air is sprayed from the spray pipe to the slack portion of the adhesive sheet, whereby the slack portion of the adhesive sheet is thermally shrunk. Also, in the expansion device, the expansion of the adhesive sheet and the thermal contraction of the adhesive sheet are performed at the same position.
然而,上述日本專利第4288392號公報所記載之擴展裝置中,因係於相同之位置進行黏著片之擴展與黏著片之熱收縮,故存在難以容易地確保供配置噴射管等與熱收縮相關之構造之空間的問題點。However, in the expansion device described in the above-mentioned Japanese Patent No. 4288392, since the expansion of the adhesive sheet and the thermal contraction of the adhesive sheet are performed at the same position, it is difficult to easily ensure the arrangement of the injection tube and the like related to the thermal contraction. The problematic point of the space of construction.
本發明係為解決如上所述之問題而完成,本發明之目的之一在於,提供一種即便於擴展片狀構件並使之熱收縮之情形時,亦能容易地確保配置熱收縮相關構造之空間之擴展裝置。The present invention was made to solve the above-mentioned problems. One of the objects of the present invention is to provide a space for arranging heat-shrinkable structures that can be easily secured even when the sheet-like member is expanded and heat-shrunk. The expansion device.
為達成上述目的,本發明之一形態之擴展裝置具備:擴展部,其於第1位置,將包含晶圓、包圍晶圓之環狀構件、貼附有晶圓及環狀構件且具有伸縮性之熱收縮性之片狀構件的晶圓環構造之片狀構件擴展;移動機構,其於已藉由擴展部擴展了片狀構件之狀態下,使擴展部沿著水平方向自第1位置移動至俯視下於水平方向上與第1位置分離之第2位置;及熱收縮部,其於第2位置,將因擴展部之擴展而產生之片狀構件的晶圓周圍之部分之鬆弛部加熱,使之收縮。In order to achieve the above object, the expansion device of one form of the present invention has: an expansion part, which at the first position will include the wafer, the ring-shaped member surrounding the wafer, and the wafer and the ring-shaped member are attached and have stretchability. The sheet member of the wafer ring structure of the heat-shrinkable sheet member expands; the moving mechanism moves the extension portion from the first position in the horizontal direction in the state where the sheet member has been expanded by the extension portion To the second position separated from the first position in the horizontal direction in plan view; and the thermal contraction part, which heats the slack part of the wafer surrounding part of the sheet-like member generated by the expansion of the expansion part at the second position , making it shrink.
於本發明之一形態之擴展裝置中,如上所述,設置如下構件:擴展部,其於第1位置,將貼附有晶圓及環狀構件且具有伸縮性之熱收縮性之片狀構件擴展;移動機構,其於已藉由擴展部擴展了片狀構件之狀態下,使擴展部沿著水平方向移動至俯視下於水平方向上與第1位置分離之第2位置;及熱收縮部,其於第2位置,將片狀構件之晶圓周圍之部分之鬆弛部加熱,使之收縮。藉此,能於第1位置進行片狀構件之擴展,於在水平方向上與第1位置分離之第2位置進行片狀構件之熱收縮,因此能於不同位置進行片狀構件之擴展與片狀構件之熱收縮。其結果,即便於擴展片狀構件並使之熱收縮之情形時,亦能於第2位置容易地確保配置片狀構件之熱收縮相關構造之空間。又,能於第2位置容易地配置達成高品質所需之構造,因此能容易地達成更高品質之片狀構件之熱收縮。In the expansion device according to one form of the present invention, as described above, the following components are provided: the expansion part, which attaches the wafer and the ring-shaped component and has a stretchable heat-shrinkable sheet-shaped component at the first position. Expansion; a movement mechanism that moves the expansion part along the horizontal direction to a second position that is separated from the first position in the horizontal direction in a plan view in a state where the sheet member has been expanded by the expansion part; and a thermal contraction part , at the second position, the slack portion of the sheet-like member around the wafer is heated to shrink it. Thereby, the expansion of the sheet-like member can be performed at the first position, and the heat-shrinking of the sheet-like member can be performed at the second position separated from the first position in the horizontal direction, so that the expansion and sheet-like member of the sheet-like member can be performed at different positions. Thermal shrinkage of shaped components. As a result, even when the sheet-like member is expanded and thermally shrunk, a space for arranging the heat-shrinkable structure of the sheet-like member can be easily secured at the second position. In addition, since the structure required to achieve high quality can be easily arranged at the second position, thermal shrinkage of a higher-quality sheet-like member can be easily achieved.
又,藉由在不同位置進行片狀構件之擴展與片狀構件之熱收縮,於存在擴展時冷卻片狀構件之冷卻構造、及去除擴展時所產生之飛散物之去除構造等之情形時,亦能於第1位置確保配置冷卻構造及去除構造等之空間。藉此,於存在冷卻構造及去除構造等之情形時,能於第1位置配置達成高品質所需之冷卻構造及去除構造等,因此能達成更高品質之片狀構件之擴展。In addition, by performing the expansion of the sheet-shaped member and the thermal contraction of the sheet-shaped member at different positions, when there is a cooling structure for cooling the sheet-shaped member during expansion, and a removal structure for removing scatter generated during expansion, etc., It is also possible to secure a space for disposing the cooling structure and removing the structure at the first position. Thereby, when there are cooling structures, removal structures, etc., the cooling structures, removal structures, etc. required for achieving high quality can be arranged at the first position, and thus the expansion of higher quality sheet-shaped members can be achieved.
於上述一形態之擴展裝置中,較佳為熱收縮部於第2位置,配置在藉由移動機構移動後之擴展部之上方。採用此種構成,能於第2位置,將熱收縮部配置在可相對較為容易地確保空間之擴展部之上方。其結果,能於第2位置更容易地配置達成高品質所需之構造,因此能更容易地達成高品質之片狀構件之熱收縮。In the expansion device of the above-mentioned one aspect, it is preferable that the heat-shrinkable part is disposed at the second position above the expansion part moved by the moving mechanism. With this configuration, the heat-shrinkable portion can be disposed above the expanding portion where a space can be relatively easily secured at the second position. As a result, the structure required for achieving high quality can be more easily arranged at the second position, and thus heat shrinkage of a high-quality sheet-like member can be more easily achieved.
該情形時,較佳為熱收縮部係以於第2位置,可沿著上下方向於不加熱片狀構件之上方位置與加熱片狀構件之下方位置之間移動之方式構成。採用此種構成,藉由使熱收縮部移動至上方位置,能使熱收縮部退避以免干涉到擴展部之移動,因此能容易地進行擴展部之移動。又,藉由使熱收縮部移動至下方位置,於使擴展部移動至第2位置後,能容易地進行片狀構件之熱收縮。In this case, it is preferable that the heat-shrinkable portion is configured to be movable in the vertical direction between the upper position of the unheated sheet member and the lower position of the heated sheet member at the second position. According to such a configuration, by moving the heat-shrinkable portion to the upper position, the heat-shrinkable portion can be retracted so as not to interfere with the movement of the expansion portion, and thus the movement of the expansion portion can be easily performed. In addition, by moving the heat-shrinkable portion to the lower position, the heat-shrinkage of the sheet-shaped member can be easily performed after the expansion portion is moved to the second position.
於上述一形態之擴展裝置中,較佳為進而具備抽吸部,該抽吸部配置於第1位置,藉由擴展部擴展片狀構件時,抽吸因擴展片狀構件而產自晶圓環構造之飛散物,將其去除。採用此種構成,能抽吸飛散物將其去除,因此能抑制因飛散物飛散至晶圓上而發生品質不良。又,與於擴展裝置內吹拂(blow)飛散物將其去除之情形不同,能抑制飛散物殘留於擴展裝置內,因此能抑制因殘留於擴展裝置內之飛散物再次飛散,導致飛散物飛散至晶圓上而發生品質不良。又,如上所述,於不同位置進行片狀構件之擴展與片狀構件之熱收縮,因此能確保配置作為擴展時之去除構造之抽吸部之空間。In the expansion device of the above-mentioned one aspect, it is preferable to further include a suction unit which is arranged at the first position, and when the sheet member is expanded by the expansion unit, suction generated from the wafer due to the expansion of the sheet member is further provided. Remove the flying objects of the ring structure. With such a configuration, the spatter can be sucked and removed, so that quality defects caused by the spatter flying onto the wafer can be suppressed. In addition, unlike the case of removing the scattered matter by blowing it in the expansion device, the remaining of the scattered matter in the expansion device can be suppressed, so it can be suppressed that the scattered matter remaining in the expansion device is scattered again, causing the scattered matter to scatter to A quality defect occurs on the wafer. Also, as described above, since the expansion of the sheet member and the thermal contraction of the sheet member are performed at different positions, it is possible to secure a space for arranging the suction unit as the removal mechanism at the time of expansion.
該情形時,較佳為抽吸部包含環狀之抽吸部本體及環狀之抽吸口,該抽吸口設置於抽吸部本體,抽吸飛散物時與晶圓之外緣對向。採用此種構成,抽吸部之抽吸口以與容易產生飛散物之晶圓之外緣對向之方式設置,因此能藉由抽吸部有效地抽吸飛散物。In this case, it is preferable that the suction part includes a ring-shaped suction part body and a ring-shaped suction port, and the suction port is provided on the suction part body so as to face the outer edge of the wafer when sucking the flying matter. . With this configuration, the suction port of the suction unit is provided so as to face the outer edge of the wafer where spatter is likely to be generated, so that the spatter can be efficiently sucked by the suction unit.
於上述抽吸部包含環狀之抽吸口之構成中,較佳為環狀之抽吸口由隔開特定間隔呈環狀配置之複數個抽吸口構成。採用此種構成,與環狀之抽吸口由單個抽吸口構成之情形相比,能增大每個抽吸口各自之抽吸力,因此能藉由抽吸部更有效地抽吸飛散物。In the configuration in which the above-mentioned suction part includes an annular suction port, it is preferable that the annular suction port is constituted by a plurality of suction ports arranged in a ring at predetermined intervals. With this structure, compared with the case where the ring-shaped suction port is composed of a single suction port, the suction force of each suction port can be increased, so that the splash can be sucked more effectively by the suction part. things.
於進而具備上述抽吸部之構成中,較佳為抽吸部係以可沿著上下方向於抽吸飛散物之下方位置與不抽吸飛散物之上方位置之間移動之方式構成。採用此種構成,藉由使抽吸部移動至上方位置,能使抽吸部退避以免干涉到擴展部之移動,因此能容易地進行擴展部之移動。又,藉由使抽吸部移動至下方位置,擴展片狀構件時能容易地進行飛散物之抽吸。In the configuration further comprising the above-mentioned suction unit, it is preferable that the suction unit is configured to be movable in the up-down direction between a lower position where the spatter is sucked and an upper position where the spatter is not sucked. According to this configuration, by moving the suction part to the upper position, the suction part can be retracted so as not to interfere with the movement of the expansion part, so that the movement of the expansion part can be easily performed. Moreover, by moving the suction part to the downward position, it is possible to easily perform suction of the scattered matter when expanding the sheet-shaped member.
於上述一形態之擴展裝置中,較佳為進而具備冷卻部,其配置於第1位置,藉由擴展部擴展片狀構件時,冷卻片狀構件。採用此種構成,擴展時能冷卻片狀構件使之變硬,因此能抑制因片狀構件柔軟,故僅片狀構件之外周部分延展,對晶圓未產生足夠之分割力從而無法分割晶圓。又,儘管存在晶圓具有柔軟之薄的膜層(低介電常數(Low-K)膜及DAF(Die Attached Film,晶粒黏著膜)等)之情形、及因膜層柔軟故即便藉由擴展分割晶圓之矽部分亦有膜層未被分割之情形,但若採用上述構成,則擴展時能將膜層冷卻使之變硬,因此能抑制有膜層未被分割之現象。又,如上所述,能於不同位置進行片狀構件之擴展與片狀構件之熱收縮,因此能確保配置作為擴展時之冷卻構造之冷卻部之空間。In the expanding device of the above-mentioned one aspect, it is preferable to further include a cooling unit which is arranged at the first position and cools the sheet-shaped member when the sheet-shaped member is expanded by the expanding unit. With this configuration, the sheet-like member can be cooled and hardened during expansion, so it can be suppressed that the sheet-like member is soft, so only the outer peripheral part of the sheet-like member is extended, and the wafer cannot be split due to insufficient force for separating the wafer. . In addition, although there are cases where the wafer has a soft and thin film (low dielectric constant (Low-K) film and DAF (Die Attached Film, die adhesive film), etc.), and because the film is soft, even by The silicon portion of the expanded split wafer may not be split. However, if the above configuration is used, the film can be cooled and hardened during expansion, so that the phenomenon of not splitting the film can be suppressed. Also, as described above, the expansion of the sheet-like member and the thermal contraction of the sheet-like member can be performed at different positions, so a space for arranging the cooling unit as the cooling structure at the time of expansion can be ensured.
該情形時,較佳為移動機構係以不使冷卻部自第1位置移動,而是獨立於冷卻部地,使擴展部沿著水平方向自第1位置移動至第2位置之方式構成。採用此種構成,與移動機構以使擴展部與冷卻部一併移動之方式構成之情形相比,能縮小移動機構所需之驅動力。其結果,能使移動機構小型化。In this case, it is preferable that the moving mechanism is configured so as not to move the cooling unit from the first position, but to move the expansion unit horizontally from the first position to the second position independently of the cooling unit. According to this structure, compared with the case where a moving mechanism is comprised so that the extension part and cooling part may move together, the driving force required for a moving mechanism can be reduced. As a result, the moving mechanism can be downsized.
於上述一形態之擴展裝置中,較佳為進而具備收容部,其俯視下配置於與第1位置及第2位置不同之位置,收容複數個晶圓環構造;及取出部,其俯視下配置於與第1位置及第2位置不同之位置,自收容部取出晶圓環構造,取出部自收容部取出晶圓環構造之方向與移動機構移動擴展部之方向大致平行。採用此種構成,和取出部自收容部取出晶圓環構造之方向與移動機構移動擴展部之方向大致正交之情形不同,能抑制擴展裝置於與取出部自收容部取出晶圓環構造之方向、及移動機構移動擴展部之方向大致正交之方向上大型化。In the expansion device of the above-mentioned one aspect, it is preferable to further include a storage part, which is arranged in a position different from the first position and the second position in a plan view, and accommodates a plurality of wafer ring structures; and a take-out part, which is arranged in a plan view. At a position different from the first position and the second position, the wafer ring structure is taken out from the storage part, and the direction in which the take-out part takes out the wafer ring structure from the storage part is substantially parallel to the direction in which the moving mechanism moves the extension part. With this configuration, unlike the case where the direction in which the take-out part takes out the wafer ring structure from the storage part is substantially perpendicular to the direction in which the moving mechanism moves the extension part, it is possible to prevent the extension device from being in the same position as the take-out part takes out the wafer ring structure from the storage part. direction, and the direction in which the moving mechanism moves the extension part is enlarged in a direction substantially perpendicular to the direction.
以下,基於圖式對將本發明具體化之實施方式進行說明。Hereinafter, embodiments embodying the present invention will be described based on the drawings.
參照圖1~圖21,對本發明之一實施方式之擴展裝置100之構成進行說明。Referring to FIGS. 1 to 21 , the configuration of an
(擴展裝置之構成)
如圖1及圖2所示,擴展裝置100係以分割晶圓210而形成複數個半導體晶片之方式構成。又,擴展裝置100係以於複數個半導體晶片彼此之間形成充足之間隙之方式構成。此處,晶圓210上已藉由沿著分割線(切割道,Street)對晶圓210照射具有透過性之波長之雷射而預先形成了改質層。所謂改質層,表示藉由雷射而形成於晶圓210之內部之龜裂及孔隙等。將以此方式於晶圓210形成改質層之方法稱為隱形切割加工。
(The configuration of the expansion device)
As shown in FIGS. 1 and 2 , the
因此,於擴展裝置100中,藉由擴展片狀構件220,可沿著改質層分割晶圓210。又,於擴展裝置100中,藉由擴展片狀構件220,分割而形成之複數個半導體晶片彼此之間隙會擴大。Therefore, in the expanding
擴展裝置100具備底板1、盒部2、提昇手部3、吸附手部4、基座5、擴展部6、冷氣供給部7、冷卻單元8、碎片清潔器9、熱收縮部10、紫外線照射部11。再者,盒部2係申請專利範圍之「收容部」之一例。又,提昇手部3係申請專利範圍之「取出部」之一例。又,冷氣供給部7及冷卻單元8係申請專利範圍之「冷卻部」之一例。又,碎片清潔器9係申請專利範圍之「抽吸部」之一例。The
此處,將水平方向中之盒部2與熱收縮部10之排列方向設為X方向,將X方向中之盒部2側設為X1方向,將X方向中之熱收縮部10側設為X2方向。又,將水平方向中之與X方向正交之方向設為Y方向,將Y方向中之盒部2側設為Y1方向,將與Y1方向相反之方向設為Y2方向。又,將上下方向設為Z方向,將上方向設為Z1方向,將下方向設為Z2方向。Here, let the arrangement direction of the
<底板>
底板1係供設置盒部2及吸附手部4之基台。底板1俯視下具有Y方向上較長之矩形形狀。
<Bottom plate>
The
<盒部>
盒部2係以可收容複數個(5個)晶圓環構造200之方式構成。此處,如圖3及圖4所示,晶圓環構造200具有晶圓210、片狀構件220、環狀構件230。
<Box part>
The
晶圓210係由作為半導體積體電路之材料的半導體物質之晶體製成之圓形薄板。如上所述,晶圓210之內部已形成了沿著分割線使內部改質之改質層。即,晶圓210係以可沿著分割線分割之方式構成。片狀構件220係具有伸縮性之黏著帶。於片狀構件220之上表面220a設置有黏著層。晶圓210貼附於片狀構件220之黏著層。環狀構件230係俯視下呈環狀之金屬製框架。於環狀構件230之外側面230a形成有缺口240及缺口250。環狀構件230以包圍晶圓210之狀態貼附於片狀構件220之黏著層。The
如圖1及圖2所示,盒部2包含Z方向移動機構21、晶圓盒22、一對載置部23。Z方向移動機構21係以將馬達21a作為驅動源而使晶圓盒22於Z方向上移動之方式構成。又,Z方向移動機構21具有自下側支持晶圓盒22之載置台21b。藉由人工作業向載置台21b供給及載置晶圓盒22。晶圓盒22具有可收容複數個晶圓環構造200之收容空間。於晶圓盒22之內側配置有複數對(5對)載置部23。自Z1方向側於一對載置部23載置有晶圓環構造200之環狀構件230。一對載置部23之一者自晶圓盒22之X1方向側之內側面向X2方向側突出。一對載置部23之另一者自晶圓盒22之X2方向側之內側面向X1方向側突出。As shown in FIGS. 1 and 2 , the
<提昇手部>
提昇手部3係以可自盒部2取出晶圓環構造200之方式構成。又,提昇手部3係以可將晶圓環構造200收容至盒部2之方式構成。
<Hand improvement>
The lifting
具體而言,提昇手部3包含Y方向移動機構31、提昇手32。Y方向移動機構31係以將馬達31a作為驅動源而使提昇手32於Y方向上移動之方式構成。提昇手32係以自Z2方向側支持晶圓環構造200之環狀構件230之方式構成。Specifically, the lifting
<吸附手部>
吸附手部4係以自Z1方向側吸附晶圓環構造200之環狀構件230之方式構成。
<Absorb hands>
The
具體而言,吸附手部4包含X方向移動機構41、Z方向移動機構42、吸附手43。X方向移動機構41係以將馬達41a作為驅動源而使吸附手43於X方向上移動之方式構成。Z方向移動機構42係以將馬達42a作為驅動源而使吸附手43於Z方向上移動之方式構成。吸附手43係以自Z1方向側支持晶圓環構造200之環狀構件230之方式構成。Specifically, the
<基座>
基座5係供設置擴展部6、冷卻單元8及紫外線照射部11之基台。基座5俯視下具有Y方向上較長之矩形形狀。
<base>
The
<擴展部>
擴展部6係以藉由擴展晶圓環構造200之片狀構件220,而沿著分割線分割晶圓210之方式構成。
<Extensions>
The
具體而言,擴展部6包含Z方向移動機構61、Y方向移動機構62、夾持部63、擴展環64。Z方向移動機構61係以將馬達61a作為驅動源而使夾持部63於Z方向上移動之方式構成。Y方向移動機構62係以將馬達62a作為驅動源而使Z方向移動機構61、夾持部63及擴展環64於Y方向上移動之方式構成。再者,Y方向移動機構62係申請專利範圍之「移動機構」之一例。Specifically, the
夾持部63係以固持晶圓環構造200之環狀構件230之方式構成。夾持部63具有下側固持部63a、上側固持部63b。下側固持部63a自Z2方向側支持環狀構件230。上側固持部63b自Z1方向側按壓由下側固持部63a支持之狀態之環狀構件230。如此,環狀構件230由下側固持部63a及上側固持部63b固持。The clamping
擴展環64係以藉由自Z2方向側支持片狀構件220,而擴展(擴張,expand)片狀構件220之方式構成。擴展環64俯視下具有環形形狀。The
<冷氣供給部>
冷氣供給部7係以藉由擴展部6擴展片狀構件220時,自Z1方向側向片狀構件220供給冷氣之方式構成。
<Air conditioner supply part>
The cold
具體而言,冷氣供給部7具有複數個噴嘴71。噴嘴71具有使自冷氣供給源(未圖示)供給之冷氣流出之冷氣供給口71a(參照圖5)。噴嘴71安裝於碎片清潔器9。冷氣供給源係用以產生冷氣之冷卻裝置。冷氣供給源例如供給已藉由設置有熱泵等之冷卻裝置等加以冷卻後之空氣。此種冷氣供給源設置於基座5。冷氣供給源與複數個噴嘴71分別藉由軟管(未圖示)而連接。Specifically, the cold
<冷卻單元>
冷卻單元8係以藉由擴展部6擴展片狀構件220時,自Z2方向側冷卻片狀構件220之方式構成。
<Cooling unit>
The
具體而言,冷卻單元8包含具有冷卻體81a及珀爾帖元件81b之冷卻構件81、動力缸82。冷卻體81a由熱容量大且熱導率高之構件構成。冷卻體81a由鋁等金屬形成。珀爾帖元件81b係以將冷卻體81a冷卻之方式構成。再者,冷卻體81a並不限定於鋁,亦可為其他熱容量大且熱導率高之構件。Specifically, the
冷卻單元8係以藉由動力缸82可於Z方向上移動之方式構成。藉此,冷卻單元8可移動至與片狀構件220接觸之位置、及與片狀構件220分離之位置。The
<碎片清潔器>
碎片清潔器9係以藉由擴展部6擴展片狀構件220時,抽吸晶圓210之碎片等之方式構成。
<Debris Cleaner>
The
如圖5所示,碎片清潔器9包含環狀構件91、複數個抽吸口92。環狀構件91係自Z1方向側觀察具有環形形狀之構件。複數個抽吸口92係用以抽吸晶圓210之碎片等之開口。複數個抽吸口92形成於環狀構件91之Z2方向側之下表面。再者,環狀構件91係申請專利範圍之「抽吸部本體」之一例。As shown in FIG. 5 , the
如圖2所示,碎片清潔器9係以藉由動力缸(未圖示)可於Z方向上移動之方式構成。藉此,碎片清潔器9可移動至與晶圓210近接之位置、及能避開於X方向上移動之吸附手43之位置。As shown in FIG. 2 , the
<熱收縮部>
熱收縮部10係以於保持複數個半導體晶片彼此之間之間隙之狀態下,藉由加熱使由擴展部6擴展後之片狀構件220收縮之方式構成。
<Heat shrink part>
The heat-
如圖1所示,熱收縮部10包含Z方向移動機構110、加熱環111、吸氣環112、擴張維持環113。Z方向移動機構110係以將馬達110a作為驅動源而使加熱環111及吸氣環112於Z方向上移動之方式構成。As shown in FIG. 1 , the heat
如圖6所示,加熱環111俯視下具有環形形狀。又,加熱環111具有加熱片狀構件220之封裝加熱器。吸氣環112與加熱環111一體地構成。吸氣環112俯視下具有環形形狀。於吸氣環112之Z2方向側之下表面形成有複數個吸氣口112a。擴張維持環113係以自Z1方向側按壓晶圓210附近之片狀構件220,以免片狀構件220因加熱環111之加熱而收縮之方式構成。As shown in FIG. 6 , the
擴張維持環113俯視下具有環形形狀。擴張維持環113係以藉由動力缸(未圖示)可於Z方向上移動之方式構成。藉此,擴張維持環113可移動至按壓片狀構件220之位置、及離開片狀構件220之位置。The
<紫外線照射部>
紫外線照射部11係以對片狀構件220照射紫外線,以降低片狀構件220之黏著層之黏著力之方式構成。具體而言,紫外線照射部11具有紫外線用照明部。
<Ultraviolet irradiation department>
The
(擴展裝置之控制類構成)
如圖7所示,擴展裝置100具備第1控制部12、第2控制部13、第3控制部14、第4控制部15、第5控制部16、擴展控制運算部17、操作控制運算部18、記憶部19。
(Control configuration of extension device)
As shown in FIG. 7 , the
第1控制部12係以控制熱收縮部10之方式構成。第1控制部12包含CPU(Central Processing Unit,中央處理單元)、具有ROM(Read Only Memory,唯讀記憶體)及RAM(Random Access Memory,隨機存取記憶體)等之記憶部。再者,第1控制部12亦可包含供保存阻斷電壓後亦被記憶之資訊之HDD(Hard Disk Drive,硬碟驅動器)等作為記憶部。又,HDD亦可為相對於第1控制部12、第2控制部13、第3控制部14、第4控制部15及第5控制部16而共通地設置。The
第2控制部13係以控制冷氣供給部7、冷卻單元8及碎片清潔器9之方式構成。第2控制部13包含CPU、具有ROM及RAM等之記憶部。第3控制部14係以控制擴展部6之方式構成。第3控制部14包含CPU、具有ROM及RAM等之記憶部。再者,第2控制部13及第3控制部14亦可包含供保存阻斷電壓後亦被記憶之資訊之HDD等作為記憶部。The
第4控制部15係以控制盒部2及提昇手部3之方式構成。第4控制部15包含CPU、具有ROM及RAM等之記憶部。第5控制部16係以控制吸附手部4之方式構成。第5控制部16包含CPU、具有ROM及RAM等之記憶部。再者,第4控制部15及第5控制部16亦可包含供保存阻斷電壓後亦被記憶之資訊之HDD等作為記憶部。The
擴展控制運算部17係以基於第1控制部12、第2控制部13及第3控制部14之處理結果,進行片狀構件220之擴展處理之相關運算之方式構成。擴展控制運算部17包含CPU、具有ROM及RAM等之記憶部。The expansion
操作控制運算部18係以基於第4控制部15及第5控制部16之處理結果,進行晶圓環構造200之移動處理之相關運算之方式構成。操作控制運算部18包含CPU、具有ROM及RAM等之記憶部。The operation
記憶部19記憶有用以使擴展裝置100動作之程式。記憶部19包含ROM及RAM等。The
(藉由擴展裝置實施之半導體晶片製造處理)
以下,對擴展裝置100之整體動作進行說明。
(Semiconductor wafer manufacturing process implemented by extension device)
Hereinafter, the overall operation of the
於步驟S1中,自盒部2取出晶圓環構造200。即,藉由提昇手32支持盒部2內所收容之晶圓環構造200後,藉由Y方向移動機構31使提昇手32向Y2方向側移動,藉此自盒部2取出晶圓環構造200。於步驟S2中,藉由吸附手43將晶圓環構造200移載至擴展部6。即,藉由X方向移動機構41使自盒部2取出之晶圓環構造200以由吸附手43吸附之狀態向X2方向側移動。然後,將向X2方向側移動後之晶圓環構造200自吸附手43移載至夾持部63後,藉由夾持部63對其加以固持。In step S1 , the
於步驟S3中,藉由擴展部6擴展片狀構件220。此時,要藉由冷卻單元8冷卻由夾持部63固持之晶圓環構造200之片狀構件220。又,若有必要,需藉由冷氣供給部7冷卻片狀構件220。藉由Z方向移動機構61使已被冷卻至特定溫度之晶圓環構造200以由夾持部63固持之狀態下降。然後,藉由擴展環64擴展片狀構件220,藉此沿著分割線分割晶圓210。此時,要一面藉由碎片清潔器9進行碎片之抽吸,一面進行晶圓210之分割。In step S3 , the
於步驟S4中,維持片狀構件220之擴展狀態不變地,使擴展部6向熱收縮部10之Z2方向側移動。即,進行晶圓210之分割後,藉由Y方向移動機構62使片狀構件220已被擴展之狀態之晶圓環構造200沿著Y1方向移動。於步驟S5中,藉由熱收縮部10加熱片狀構件220,使之收縮。此時,要藉由加熱環111將沿著Y1方向移動後之晶圓環構造200以被擴張維持環113及擴展環64夾持之狀態加熱。此時,要藉由吸氣環112進行吸氣,並藉由紫外線照射部11進行紫外線之照射。In step S4 , while maintaining the expanded state of the
於步驟S6中,使擴展部6返回至原來之位置。即,藉由Y方向移動機構31使片狀構件220收縮後之晶圓環構造200向Y2方向側移動。於步驟S7中,在已藉由吸附手43將晶圓環構造200自擴展部6移載至提昇手部3之狀態下,藉由X方向移動機構41使其向X1方向側移動,並遞交至提昇手32。於步驟S8中,將晶圓環構造200收容至盒部2。即,藉由Y方向移動機構31使由提昇手32支持之晶圓環構造200向Y1方向側移動,藉此將晶圓環構造200收容至盒部2。至此,對1片晶圓環構造200進行之處理完成。In step S6, the
(擴展及熱收縮之相關構成) 參照圖1及圖9~圖14,詳細地對擴展及熱收縮之相關構成進行說明。 (Related components of expansion and heat shrinkage) Referring to Fig. 1 and Fig. 9 to Fig. 14, the structure related to expansion and thermal contraction will be described in detail.
此處,本實施方式中,如圖1及圖9~圖14所示,擴展部6係以於第1位置P1將具有伸縮性之熱收縮性之片狀構件220擴展之方式構成。又,Y方向移動機構62係以於已藉由擴展部6擴展了片狀構件220之狀態下,使擴展部6之Z方向移動機構61、夾持部63及擴展環64沿著水平方向(Y1方向)自第1位置P1移動至俯視下於水平方向(Y1方向)上與第1位置P1分離之第2位置P2之方式構成。又,熱收縮部10係以於第2位置P2,將因擴展部6之擴展而產生之片狀構件220的晶圓210周圍之部分220b之鬆弛部加熱,使之收縮(使之熱收縮)之方式構成。Here, in this embodiment, as shown in FIG. 1 and FIGS. 9 to 14 , the
<擴展之相關構成>
如圖9~圖11所示,擴展部6係以擴展片狀構件220時,藉由夾持部63於上下方向(Z方向)上固持環狀構件230之方式構成。具體而言,夾持部63之上側固持部63b具備以包圍晶圓環構造200之方式配置之複數個(4個)滑行移動體63ba。複數個滑行移動體63ba係以固持環狀構件230時,於水平方向上向晶圓210側滑行移動之方式構成。又,夾持部63之下側固持部63a係以藉由氣缸等動力缸之驅動力,朝已滑行移動至晶圓210側之上側固持部63b(複數個滑行移動體63ba)向Z1方向側上升之方式構成。藉此,環狀構件230被固持於夾持部63之上側固持部63b與下側固持部63a之間加以固定。
<Related components of expansion>
As shown in FIGS. 9 to 11 , the
又,夾持部63係以在將環狀構件230固持於上側固持部63b與下側固持部63a之間之狀態下,藉由Z方向移動機構61之馬達61a之驅動力,朝擴展環64向Z2方向側下降之方式構成。藉此,片狀構件220被壓抵於擴展環64,並且片狀構件220被擴展。再者,擴展環64相對片狀構件220配置於Z2方向側。又,擴展環64以包圍晶圓210之方式,形成為與環狀構件230同軸且呈圓形之環狀。又,擴展環64之直徑大於晶圓210之直徑,且小於環狀構件230之直徑(內徑)。即,擴展環64在水平方向上配置於晶圓210與環狀構件230之間。In addition, the clamping
又,本實施方式中,於作為擴展位置之第1位置P1,相對晶圓環構造200於Z1方向側配置有碎片清潔器9,該碎片清潔器9抽吸因擴展片狀構件220而產自晶圓環構造200之飛散物,將其去除。飛散物例如為晶圓210之碎片等,因於晶圓210之外緣210a(參照圖12)附近,晶圓210等之碎片較小,故於擴展片狀構件220時,其位置不穩,容易成為飛散物。又,於晶圓210與片狀構件220之間存在晶粒黏著膜之情形時,亦有晶粒黏著膜成為飛散物之情形。碎片清潔器9係以藉由自負壓發生裝置供給之負壓,抽吸飛散物,將其去除之方式構成。In addition, in the present embodiment, at the first position P1 which is the expanded position, a
又,本實施方式中,如圖5及圖12所示,碎片清潔器9之抽吸口92以抽吸飛散物(晶圓210之碎片及晶粒黏著膜之碎片等)時與圓形環狀之晶圓210之外緣210a對向之方式,形成為圓形環狀。具體而言,圓形環狀之抽吸口92由隔開特定間隔呈圓形環狀配置之複數個抽吸口92構成。碎片清潔器9係以藉由圓形環狀之抽吸口92,向與晶圓210之中心分離之方向抽吸飛散物之方式構成。In addition, in this embodiment, as shown in FIG. 5 and FIG. 12 , the
又,本實施方式中,如圖9~圖11所示,碎片清潔器9係以藉由氣缸等動力缸之驅動力,於作為擴展位置之第1位置P1,可沿著上下方向(Z方向)於抽吸飛散物之下方位置與不抽吸飛散物之上方位置之間移動之方式構成。下方位置係晶圓210附近之位置。又,上方位置係能避開於X方向上移動之吸附手43之退避位置。碎片清潔器9係以擴展片狀構件220時,自上方位置向Z2方向側下降至下方位置之方式構成。又,碎片清潔器9係以將片狀構件220壓抵於擴展環64前開始抽吸動作,且至少持續進行抽吸動作至將片狀構件220壓抵於擴展環64之動作完成(藉由Z方向移動機構61使其向Z2方向側移動之動作完成之時點)為止之方式構成。Also, in this embodiment, as shown in FIGS. 9 to 11 , the
又,本實施方式中,於作為擴展位置之第1位置P1配置有冷氣供給部7及冷卻單元8,其等係於藉由擴展部6擴展片狀構件220時,冷卻片狀構件220者。冷氣供給部7係與碎片清潔器9一體地相對晶圓環構造200設置於Z1方向側。因此,冷氣供給部7係以於第1位置P1,可與碎片清潔器9一體地沿著上下方向(Z方向)於供給冷氣之下方位置與不供給冷氣之上方位置之間移動之方式構成。冷氣供給部7係以擴展片狀構件220時,自上方位置向Z2方向側下降至下方位置之方式構成。又,冷氣供給部7係以將片狀構件220壓抵於擴展環64前開始冷氣供給動作,且至少持續進行冷氣供給動作至將片狀構件220壓抵於擴展環64為止之方式構成。In addition, in the present embodiment, the cold
又,冷卻單元8相對晶圓環構造200配置於Z2方向側。又,冷卻單元8係以於第1位置P1,藉由氣缸等動力缸82之驅動力,可沿著上下方向(Z方向)於冷卻片狀構件220之上方位置與不冷卻片狀構件220之下方位置之間移動之方式構成。冷卻單元8係以擴展片狀構件220時,自下方位置向Z1方向側上升至上方位置之方式構成。又,冷卻單元8係以將片狀構件220壓抵於擴展環64前開始並完成冷卻動作之方式構成。又,冷卻單元8係以將片狀構件220壓抵於擴展環64前退避至下方位置之方式構成。In addition, the
又,Y方向移動機構62係以如下方式構成:於藉由擴展部6擴展片狀構件220之動作(將片狀構件220壓抵於擴展環64之動作)完成後,一面維持已藉由擴展部6擴展了片狀構件220之狀態,一面使擴展部6(Z方向移動機構61、夾持部63及擴展環64)沿著Y1方向自剛才進行片狀構件220之擴展之第1位置P1移動至即將進行片狀構件220之熱收縮之第2位置P2。此時,Y方向移動機構62係以不使碎片清潔器9、冷氣供給部7及冷卻單元8自第1位置P1移動,而是獨立於碎片清潔器9、冷氣供給部7及冷卻單元8地,使擴展部6沿著Y1方向自第1位置P1移動至第2位置P2之方式構成。此時,碎片清潔器9及冷氣供給部7已退避至上方位置,冷卻單元8已退避至下方位置。Also, the Y-
Y方向移動機構62除了馬達62a以外,進而具有載置部62b、軌道部62c。載置部62b係以上表面供載置Z方向移動機構61、夾持部63及擴展環64之方式構成。又,載置部62b形成為俯視下呈大致矩形形狀之平板狀。又,載置部62b以可移動之方式設置於軌道部62c上。軌道部62c於X方向上分開而成對地設置。一對軌道部62c係以沿著Y方向於第1位置P1與第2位置P2之間延伸之方式設置。Y方向移動機構62係以藉由馬達62a之驅動力,可使載置部62b沿著一對軌道部62c於Y方向上移動,藉此使Z方向移動機構61、夾持部63及擴展環64沿著Y方向於第1位置P1與第2位置P2之間移動之方式構成。The Y-
又,於載置部62b,設置有沿著上下方向(Z方向)貫通載置部62b之孔部62ba。孔部62ba俯視下形成為圓形形狀。又,孔部62ba於第1位置P1具有可使冷卻單元8通過之大小。藉此,可使冷卻單元8經由孔部62ba於上方位置與下方位置之間移動。又,孔部62ba於第2位置P2具有可使紫外線照射部11通過之大小。藉此,可使紫外線照射部11經由孔部62ba於上方位置與下方位置之間移動。又,孔部62ba設置於擴展環64之內側。冷卻單元8及紫外線照射部11係以經由孔部62ba向擴展環64之內側移動之方式構成。Moreover, the hole part 62ba which penetrates the mounting
<熱收縮之相關構成>
又,本實施方式中,如圖13及圖14所示,熱收縮部10於作為熱收縮位置之第2位置P2,配置在藉由Y方向移動機構62移動後之擴展部6之Z1方向側。又,熱收縮部10之加熱環111及吸氣環112係以藉由Z方向移動機構110之馬達110a之驅動力,於第2位置P2,可沿著上下方向(Z方向)於不加熱片狀構件220之上方位置與加熱片狀構件220之下方位置之間移動之方式構成。又,熱收縮部10之擴張維持環113係以藉由氣缸等動力缸之驅動力,於第2位置P2,可沿著上下方向於不按壓片狀構件220之上方位置與按壓片狀構件220之下方位置之間移動之方式構成。又,上方位置係能避開於Y1方向上移動之擴展部6及晶圓環構造200之退避位置。又,下方位置係片狀構件220附近之位置。
<Constituents related to heat shrinkage>
In addition, in this embodiment, as shown in FIG. 13 and FIG. 14 , the heat-
又,熱收縮部10(加熱環111、吸氣環112及擴張維持環113)係以使片狀構件220熱收縮時,自上方位置向Z2方向側下降至下方位置之方式構成。再者,加熱環111及吸氣環112用之上下機構(Z方向移動機構110)與擴張維持環113用之上下機構(動力缸)為不同機構。因此,加熱環111及吸氣環112與擴張維持環113可相互獨立地上下移動。擴張維持環113係以於上下方向(Z方向)上將片狀構件220夾在自己與擴展環64之間之方式構成。藉此,擴張維持環113以維持片狀構件220之與晶圓210對應之部分之擴展狀態之方式構成。又,加熱環111係以於藉由擴張維持環113維持片狀構件220之擴展狀態之狀態下,藉由作為加熱機構之封裝加熱器,將片狀構件220之晶圓210周圍之部分220b(擴張維持環113之外側之部分)加熱之方式構成。又,吸氣環112係以於藉由加熱環111加熱片狀構件220之期間內,吸收因加熱而產自片狀構件220之氣體之方式構成。In addition, the heat-shrinkable part 10 (
又,本實施方式中,於作為熱收縮位置之第2位置P2配置有紫外線照射部11,其係於藉由熱收縮部10使片狀構件220熱收縮時,對片狀構件220照射紫外線者。紫外線照射部11相對晶圓環構造200配置於Z2方向側。又,紫外線照射部11係以於第2位置P2,藉由氣缸等動力缸121之驅動力,可沿著上下方向(Z方向)於照射紫外線之上方位置與不照射紫外線之下方位置之間移動之方式構成。紫外線照射部11係以使片狀構件220熱收縮時,自下方位置向Z1方向側上升至上方位置之方式構成。In addition, in this embodiment, the ultraviolet
又,Y方向移動機構62係以如下方式構成:於藉由熱收縮部10使片狀構件220熱收縮之動作完成後,使擴展部6(Z方向移動機構61、夾持部63及擴展環64)沿著Y2方向自剛才進行熱收縮之第2位置P2移動至剛才進行擴展之第1位置P1。此時,Y方向移動機構62係以不使熱收縮部10及紫外線照射部11自第2位置P2移動,而是獨立於熱收縮部10及紫外線照射部11地,使擴展部6沿著Y2方向自第2位置P2移動至第1位置P1之方式構成。此時,熱收縮部10已退避至上方位置,紫外線照射部11已退避至下方位置。Also, the Y-
<盒部及提昇手部之相關構成>
又,本實施方式中,如圖1所示,盒部2俯視下配置於與第1位置P1及第2位置P2不同之位置。又,提昇手部3俯視下配置於與第1位置P1及第2位置P2不同之位置。又,提昇手部3自盒部2取出晶圓環構造200之方向(Y2方向)與Y方向移動機構62移動擴展部6之方向(Y1方向)大致平行。即,提昇手部3插拔晶圓環構造200之插拔方向(Y方向)與Y方向移動機構62移動擴展部6之移動方向(Y方向)彼此大致平行。又,盒部2係於X方向上與作為熱收縮位置之第2位置P2並排而配置。又,提昇手部3取出晶圓環構造200之取出位置係於X方向上與作為擴展位置之第1位置P1並排而配置。
<The composition of the box part and the lifting hand part>
Moreover, in this embodiment, as shown in FIG. 1, the
(取出處理)
參照圖15,對擴展裝置100中之取出處理進行說明。取出處理係於上述半導體晶片製造處理之步驟S1中進行之處理。
(take out processing)
Referring to FIG. 15 , the take-out processing in the
如圖15所示,於步驟S101中,判斷提昇手部3之提昇手32是否空閒。於提昇手32不空閒之情形時,結束取出處理。又,於提昇手32空閒之情形時,進入步驟S102。As shown in FIG. 15 , in step S101 , it is judged whether the lifting
然後,於步驟S102中,判斷盒部2之晶圓盒22內是否存在提昇手32。於晶圓盒22內不存在提昇手32之情形時,進入步驟S104。又,於晶圓盒22內存在提昇手32之情形時,進入步驟S103。Then, in step S102 , it is judged whether there is a lifting
然後,於步驟S103中,藉由Y方向移動機構31使提昇手32沿著Y2方向自晶圓盒22內移動至晶圓盒22外。Then, in step S103 , the lifting
然後,於步驟S104中,藉由Z方向移動機構21使晶圓盒22於Z方向上移動,以可藉由提昇手32取出晶圓盒22內之作為取出對象之晶圓環構造200。具體而言,於步驟S104中,藉由Z方向移動機構21使晶圓盒22於Z方向上移動,以使提昇手32之上表面位於晶圓盒22內之作為取出對象之晶圓環構造200的環狀構件230之下表面之略偏Z2方向側之高度。Then, in step S104 , the
然後,於步驟S105中,藉由Y方向移動機構31使提昇手32於Y1方向上移動,以使其位於晶圓盒22內之作為取出對象之晶圓環構造200的環狀構件230之正下方。Then, in step S105, the lifting
然後,於步驟S106中,將晶圓盒22內之作為取出對象之晶圓環構造200遞交至提昇手32。具體而言,於步驟S106中,藉由Z方向移動機構21使晶圓盒22於Z2方向上移動,以使晶圓盒22內之作為取出對象之晶圓環構造200之環狀構件230之下表面藉由提昇手32自一對載置部23之上表面略微上浮。Then, in step S106 , the
然後,於步驟S107中,在藉由提昇手32之上表面支持作為取出對象之晶圓環構造200之環狀構件230之下表面的狀態下,藉由Y方向移動機構31使提昇手32於Y2方向上移動。藉此,作為取出對象之晶圓環構造200被提昇手32自晶圓盒22內取出。然後,結束取出處理。Then, in step S107, in the state where the lower surface of the
(移載處理)
參照圖16,對擴展裝置100中之移載處理進行說明。移載處理係於上述半導體晶片製造處理之步驟S2或S7中進行之處理。
(transfer processing)
Referring to FIG. 16 , the migration process in the
如圖16所示,於步驟S201中,藉由Z方向移動機構42使吸附手部4之吸附手43上升。As shown in FIG. 16 , in step S201 , the
然後,於步驟S202中,藉由X方向移動機構41使吸附手43移動至晶圓環構造200之上方。具體而言,於上述半導體晶片製造處理之步驟S2之情形時,使吸附手43移動至由提昇手32支持之晶圓環構造200之上方。又,於上述半導體晶片製造處理之步驟S7之情形時,使吸附手43移動至由擴展部6支持之晶圓環構造200之上方。Then, in step S202 , the
然後,於步驟S203中,藉由Z方向移動機構42使吸附手43向晶圓環構造200下降。Then, in step S203 , the
然後,於步驟S204中,吸附手43藉由自負壓發生裝置供給之負壓吸附晶圓環構造200之環狀構件230。Then, in step S204, the
然後,於步驟S205中,藉由Z方向移動機構42使吸附手43上升。Then, in step S205 , the
然後,於步驟S206中,藉由X方向移動機構41使吸附手43移動至移載目的地之上方。具體而言,於上述半導體晶片製造處理之步驟S2之情形時,使吸附手43移動至第1位置P1之擴展部6之上方。又,於上述半導體晶片製造處理之步驟S7之情形時,使吸附手43移動至提昇手32之上方。Then, in step S206 , the
然後,於步驟S207中,藉由Z方向移動機構42使吸附手43向移載目的地(擴展部6或提昇手32)下降。Then, in step S207 , the
然後,於步驟S208中,解除吸附手43對晶圓環構造200之環狀構件230之吸附。至此,將晶圓環構造200移載至移載目的地之動作完成。然後,結束移載處理。Then, in step S208 , the suction of the
(擴展處理)
參照圖17及圖18,對擴展裝置100中之擴展處理進行說明。擴展處理係於上述半導體晶片製造處理之步驟S3中進行之處理。擴展處理於第1位置P1進行。
(extended processing)
Expansion processing in the
如圖17所示,於步驟S301中,藉由Z方向移動機構42使吸附手43上升。此時,晶圓環構造200之環狀構件230由夾持部63之下側固持部63a支持。As shown in FIG. 17 , in step S301 , the
然後,於步驟S302中,使上側固持部63b之複數個滑行移動體63ba向晶圓210側於水平方向上滑行移動。Then, in step S302, the plurality of sliding bodies 63ba of the
然後,於步驟S303中,在支持晶圓環構造200之環狀構件230之狀態下,使下側固持部63a上升。藉此,環狀構件230被固持於上側固持部63b與下側固持部63a之間加以固定。Then, in step S303 , the
然後,於步驟S304中,藉由動力缸使碎片清潔器9與冷氣供給部7一併向晶圓環構造200下降。Then, in step S304 , the
然後,於步驟S305中,判斷是否需要藉由冷氣供給部7向片狀構件220供給冷氣以實施冷卻。於需要藉由冷氣供給部7向片狀構件220供給冷氣以實施冷卻之情形時,進入步驟S305a。然後,於步驟S305a中,使冷氣供給部7開始向片狀構件220供給冷氣。再者,於藉由冷氣供給部7進行冷卻之情形時,下述步驟S307中亦要進行藉由冷卻單元8實施之冷卻。然後,進入步驟S306。又,於無需藉由冷氣供給部7向片狀構件220供給冷氣以實施冷卻之情形時,不進行步驟S305a之處理,而是進入步驟S306。Then, in step S305 , it is determined whether it is necessary to supply cold air to the
然後,於步驟S306中,判斷是否需要藉由冷卻單元8冷卻片狀構件220。於需要藉由冷卻單元8冷卻片狀構件220之情形時,進入步驟S307。然後,於步驟S307中,除了藉由冷氣供給部7冷卻片狀構件220以外,進而藉由冷卻單元8冷卻片狀構件220。然後,進入步驟S308。又,於無需藉由冷卻單元8冷卻片狀構件220之情形時,不進行步驟S307之處理,而是進入步驟S308。Then, in step S306 , it is judged whether the
然後,如圖18所示,於步驟S308中,使碎片清潔器9開始抽吸飛散物。Then, as shown in FIG. 18 , in step S308 , the
然後,於步驟S309中,藉由Z方向移動機構61使夾持部63急速下降而將片狀構件220壓抵於擴展環64,藉此執行片狀構件220之擴展。由此,片狀構件220上之晶圓210被分割成矩陣狀之複數個半導體晶片,並且複數個半導體晶片之間之間隙擴大。又,於步驟S309中,使夾持部63自擴展開始位置下降至擴展完成位置。Then, in step S309 , the clamping
然後,於步驟S310中,使冷氣供給部7停止向片狀構件220供給冷氣。再者,當於步驟305中判斷為無需藉由冷氣供給部7向片狀構件220供給冷氣以實施冷卻之情形時,不進行步驟S310之處理,而是進入步驟S311。Then, in step S310 , the cool
然後,於步驟S311中,使碎片清潔器9停止抽吸飛散物。Then, in step S311, the
然後,於步驟S312中,藉由動力缸使碎片清潔器9與冷氣供給部7一併上升。然後,結束擴展處理。然後,一面維持已擴展了片狀構件220之狀態,一面藉由Y方向移動機構62使擴展部6(Z方向移動機構61、夾持部63及擴展環64)自第1位置P1移動至第2位置P2。Then, in step S312, the
(熱收縮處理)
參照圖19及圖20,對擴展裝置100中之熱收縮處理進行說明。熱收縮處理係於上述半導體晶片製造處理之步驟S5中進行之處理。
(heat shrink treatment)
Referring to FIG. 19 and FIG. 20 , the heat shrinking process in the
如圖19所示,於步驟S401中,藉由動力缸121使紫外線照射部11上升。As shown in FIG. 19 , in step S401 , the
然後,於步驟S402中,藉由動力缸使擴張維持環113下降。藉此,片狀構件220被夾在擴張維持環113與擴展環64之間。Then, in step S402, the
然後,於步驟S403中,藉由Z方向移動機構110使加熱環111與吸氣環112下降。再者,加熱環111及吸氣環112用之上下機構(Z方向移動機構110)與擴張維持環113用之上下機構(動力缸)為不同機構。Then, in step S403 , the
然後,於步驟S404中,使吸氣環112開始吸氣。Then, in step S404, the
然後,於步驟S405中,使加熱環111開始加熱片狀構件220,並使紫外線照射部11開始對片狀構件220照射紫外線。藉由使加熱環111加熱片狀構件220,片狀構件220之晶圓210周圍之部分220b之鬆弛部收縮而被去除。又,藉由使紫外線照射部11對片狀構件220照射紫外線,片狀構件220之黏著層之黏著力降低。Then, in step S405 , the
然後,於步驟S406中,判斷加熱環111加熱片狀構件220之加熱時間是否達到設定時間。於加熱環111加熱片狀構件220之加熱時間未達到設定時間之情形時,重複步驟S406之處理。又,於加熱環111加熱片狀構件220之加熱時間達到設定時間之情形時,進入步驟S407。Then, in step S406, it is judged whether the heating time of the
然後,於步驟S407中,使加熱環111停止加熱片狀構件220。Then, in step S407 , the
然後,於步驟S408中,藉由Z方向移動機構61使夾持部63低速上升。Then, in step S408 , the clamping
然後,於步驟S409中,判斷夾持部63是否已上升至擴展開始位置。於夾持部63未上升至擴展開始位置之情形時,重複步驟S409之處理。又,於夾持部63已上升至擴展開始位置之情形時,進入步驟S410。Then, in step S409, it is determined whether the clamping
再者,於步驟S406~S409之處理中,展示了以1次執行藉由加熱環111加熱片狀構件220之動作、及藉由Z方向移動機構61使夾持部63上升之動作之例,但熱收縮之構成並不限於此。例如,亦可分成複數次執行藉由加熱環111加熱片狀構件220之動作、及藉由Z方向移動機構61使夾持部63上升之動作。即,亦可一面重複藉由加熱環111加熱片狀構件220之動作、及藉由Z方向移動機構61使夾持部63上升之動作,一面使夾持部63上升至擴展開始位置。Furthermore, in the processing of steps S406 to S409, an example in which the operation of heating the
然後,於步驟S410中,使吸氣環112停止吸氣,並使紫外線照射部11停止對片狀構件220照射紫外線。Then, in step S410 , the
然後,於步驟S411中,藉由Z方向移動機構110使加熱環111與吸氣環112上升。Then, in step S411 , the
然後,於步驟S412中,藉由動力缸使擴張維持環113上升。Then, in step S412, the
然後,於步驟S413中,藉由動力缸121使紫外線照射部11下降。然後,結束熱收縮處理。然後,藉由Y方向移動機構62使擴展部6(Z方向移動機構61、夾持部63及擴展環64)自第2位置P2移動至第1位置P1。然後,藉由吸附手43將擴展及熱收縮完成後之晶圓環構造200自第1位置P1之擴展部6移載至提昇手32。Then, in step S413 , the
(收容處理)
參照圖21,對擴展裝置100中之收容處理進行說明。收容處理係於上述半導體晶片製造處理之步驟S8中進行之處理。
(containment and processing)
Referring to FIG. 21 , storage processing in the
如圖21所示,於步驟S501中,判斷提昇手部3之提昇手32是否空閒。於提昇手32不空閒之情形時,結束收容處理。又,於提昇手32空閒之情形時,進入步驟S502。As shown in FIG. 21 , in step S501 , it is judged whether the lifting
然後,於步驟S502中,判斷盒部2之晶圓盒22內是否存在提昇手32。於晶圓盒22內不存在提昇手32之情形時,進入步驟S504。又,於晶圓盒22內存在提昇手32之情形時,進入步驟S503。Then, in step S502 , it is judged whether there is a lifting
然後,於步驟S503中,藉由Y方向移動機構31使提昇手32沿著Y2方向自晶圓盒22內移動至晶圓盒22外。Then, in step S503 , the lifting
然後,於步驟S504中,藉由Z方向移動機構21使晶圓盒22於Z方向上移動,以可將提昇手32上之作為收容對象之晶圓環構造200收容至晶圓盒22。具體而言,於步驟S504中,藉由Z方向移動機構21使晶圓盒22於Z方向上移動,以使提昇手32上之作為收容對象之晶圓環構造200的環狀構件230之下表面位於晶圓盒22內之一對載置部23之上表面之略偏Z1方向側之高度。Then, in step S504 , the
然後,於步驟S505中,藉由Y方向移動機構31使提昇手32於Y1方向上移動,以使提昇手32上之作為收容對象之晶圓環構造200的環狀構件230之下表面位於晶圓盒22內之收容位置(一對載置部23之正上方)。Then, in step S505, the lifting
然後,於步驟S506中,將提昇手32上之作為收容對象之晶圓環構造200遞交至晶圓盒22內之一對載置部23。具體而言,於步驟S506中,藉由Z方向移動機構21使晶圓盒22於Z1方向上移動,以使提昇手32之上表面位於較一對載置部23之上表面略靠下之位置。Then, in step S506 , the
然後,於步驟S508中,在藉由一對載置部23之上表面支持作為收容對象之晶圓環構造200之環狀構件230之下表面的狀態下,藉由Y方向移動機構31使提昇手32於Y2方向上移動。藉此,在作為收容對象之晶圓環構造200收容於晶圓盒22內之狀態下,將提昇手32取出。然後,結束收容處理。Then, in step S508, in a state where the lower surface of the
(本實施方式之效果) 本實施方式中,可獲得如下所述之效果。 (Effect of this embodiment) In this embodiment, the following effects can be obtained.
本實施方式中,如上所述,設置如下構件:擴展部6,其於第1位置P1,將貼附有晶圓210及環狀構件230且具有伸縮性之熱收縮性之片狀構件220擴展;Y方向移動機構62,其於已藉由擴展部6擴展了片狀構件220之狀態下,使擴展部6沿著水平方向移動至俯視下於水平方向上與第1位置P1分離之第2位置P2;及熱收縮部10,其於第2位置P2,將片狀構件220之晶圓210周圍之部分220b之鬆弛部加熱,使之收縮。藉此,能於第1位置P1進行片狀構件220之擴展,於在水平方向上與第1位置P1分離之第2位置P2進行片狀構件220之熱收縮,因此能於不同位置進行片狀構件220之擴展與片狀構件220之熱收縮。其結果,即便於擴展片狀構件220並使之熱收縮之情形時,亦能於第2位置P2容易地確保配置片狀構件220之熱收縮相關構造之空間。又,能於第2位置P2容易地配置達成高品質所需之構造,因此能容易地達成更高品質之片狀構件220之熱收縮。In this embodiment, as described above, the following member is provided: the
又,藉由在不同位置進行片狀構件220之擴展與片狀構件220之熱收縮,於存在擴展時冷卻片狀構件220之冷卻構造、及去除擴展時所產生之飛散物之去除構造等之情形時,亦能於第1位置P1確保配置冷卻構造及去除構造等之空間。藉此,於存在冷卻構造及去除構造等之情形時,能於第1位置P1配置達成高品質所需之冷卻構造及去除構造等,因此能達成更高品質之片狀構件220之擴展。In addition, by expanding the
又,本實施方式中,如上所述,熱收縮部10於第2位置P2,配置在藉由Y方向移動機構62移動後之擴展部6之上方。藉此,能於第2位置P2,將熱收縮部10配置在可相對較為容易地確保空間之擴展部6之上方。其結果,能於第2位置P2更容易地配置達成高品質所需之構造,因此能更容易地達成高品質之片狀構件220之熱收縮。Moreover, in this embodiment, as mentioned above, the
又,本實施方式中,如上所述,熱收縮部10係以於第2位置P2,可沿著上下方向於不加熱片狀構件220之上方位置與加熱片狀構件220之下方位置之間移動之方式構成。如此,藉由使熱收縮部10移動至上方位置,能使熱收縮部10退避以免干涉到擴展部6之移動,因此能容易地進行擴展部6之移動。又,藉由使熱收縮部10移動至下方位置,於使擴展部6移動至第2位置P2後,能容易地進行片狀構件220之熱收縮。Also, in the present embodiment, as described above, the heat-
又,本實施方式中,如上所述,擴展裝置100具備碎片清潔器9,該碎片清潔器9配置於第1位置P1,藉由擴展部6擴展片狀構件220時,抽吸因擴展片狀構件220而產自晶圓環構造200之飛散物,將其去除。藉此,能抽吸飛散物將其去除,因此能抑制因飛散物飛散至晶圓210上而發生品質不良。又,與於擴展裝置100內吹拂(blow)飛散物將其去除之情形不同,能抑制飛散物殘留於擴展裝置100內,因此能抑制因殘留於擴展裝置100內之飛散物再次飛散,導致飛散物飛散至晶圓210上而發生品質不良。又,如上所述,於不同位置進行片狀構件220之擴展與片狀構件220之熱收縮,因此能確保配置作為擴展時之去除構造之碎片清潔器9之空間。In addition, in this embodiment, as described above, the expanding
又,本實施方式中,如上所述,碎片清潔器9包含環狀之環狀構件91及環狀之抽吸口92,該抽吸口92設置於環狀構件91,抽吸飛散物時與晶圓210之外緣對向。藉此,碎片清潔器9之抽吸口92以與容易產生飛散物之晶圓210之外緣對向之方式設置,因此能藉由碎片清潔器9有效地抽吸飛散物。Also, in this embodiment, as described above, the
又,本實施方式中,如上所述,環狀之抽吸口92由隔開特定間隔呈環狀配置之複數個抽吸口92構成。藉此,與環狀之抽吸口92由單個抽吸口92構成之情形相比,能增大每個抽吸口92各自之抽吸力,因此能藉由碎片清潔器9更有效地抽吸飛散物。In addition, in the present embodiment, as described above, the
又,本實施方式中,如上所述,碎片清潔器9係以可沿著上下方向於抽吸飛散物之下方位置與不抽吸飛散物之上方位置之間移動之方式構成。如此,藉由使碎片清潔器9移動至上方位置,能使碎片清潔器9退避以免干涉到擴展部6之移動,因此能容易地進行擴展部6之移動。又,藉由使碎片清潔器9移動至下方位置,擴展片狀構件220時能容易地進行飛散物之抽吸。In addition, in the present embodiment, as described above, the
又,本實施方式中,如上所述,擴展裝置100具備冷氣供給部7及冷卻單元8,其等配置於第1位置P1,藉由擴展部6擴展片狀構件220時,冷卻片狀構件220。藉此,擴展時能冷卻片狀構件220使之變硬,因此能抑制因片狀構件220柔軟,故僅片狀構件220之外周部分延展,對晶圓210未產生足夠之分割力從而無法分割晶圓210。又,儘管存在晶圓210具有柔軟之薄的膜層(Low-K膜及DAF等)之情形、及因膜層柔軟故即便藉由擴展分割晶圓210之矽部分亦有膜層未被分割之情形,但若採用上述構成,則擴展時能將膜層冷卻使之變硬,因此能抑制有膜層未被分割之現象。又,如上所述,能於不同位置進行片狀構件220之擴展與片狀構件220之熱收縮,因此能確保配置作為擴展時之冷卻構造之冷氣供給部7及冷卻單元8之空間。In addition, in this embodiment, as described above, the
又,本實施方式中,如上所述,Y方向移動機構62係以不使冷氣供給部7及冷卻單元8自第1位置P1移動,而是獨立於冷氣供給部7及冷卻單元8地,使擴展部6沿著水平方向自第1位置P1移動至第2位置P2之方式構成。藉此,與Y方向移動機構62以使擴展部6與冷氣供給部7及冷卻單元8一併移動之方式構成之情形相比,能縮小Y方向移動機構62所需之驅動力。其結果,能使Y方向移動機構62小型化。Also, in this embodiment, as described above, the Y-
又,本實施方式中,如上所述,擴展裝置100具備:盒部2,其俯視下配置於與第1位置P1及第2位置P2不同之位置,收容複數個晶圓環構造200;及提昇手部3,其俯視下配置於與第1位置P1及第2位置P2不同之位置,自盒部2取出晶圓環構造200。又,提昇手部3自盒部2取出晶圓環構造200之方向與Y方向移動機構62移動擴展部6之方向大致平行。藉此,和提昇手部3自盒部2取出晶圓環構造200之方向與Y方向移動機構62移動擴展部6之方向大致正交之情形不同,能抑制擴展裝置100於與提昇手部3自盒部2取出晶圓環構造200之方向、及Y方向移動機構62移動擴展部6之方向大致正交之方向上大型化。In addition, in this embodiment, as described above, the
[變化例] 再者,關於此次所揭示之實施方式,應認為所有點皆為例示而非具有限制性者。本發明之範圍並非由上述實施方式之說明表示,而是由申請專利範圍表示,進而包含與申請專利範圍均等之含義及範圍內之所有變更(變化例)。 [variation example] In addition, regarding the embodiment disclosed this time, it should be considered that it is an illustration and restrictive at no point. The scope of the present invention is shown not by the description of the above-mentioned embodiments but by the claims, and all changes (modifications) within the meaning and scope equivalent to the claims are included.
例如,於上述實施方式中,示出了熱收縮部於第2位置,配置在擴展部之上方之例,但本發明並不限於此。於本發明中,熱收縮部亦可於第2位置,配置在擴展部之下方。For example, in the above-mentioned embodiment, the example in which the thermal contraction part is arranged at the second position above the expansion part was shown, but the present invention is not limited thereto. In the present invention, the heat-shrinkable portion may also be disposed below the expansion portion at the second position.
又,於上述實施方式中,示出了熱收縮部具有加熱環之例,但本發明並不限於此。於本發明中,只要能加熱片狀構件,熱收縮部亦可具有加熱環以外之加熱部。In addition, in the above-mentioned embodiment, the example in which the heat-shrinkable part has the heater ring was shown, but this invention is not limited to this. In the present invention, as long as the sheet-shaped member can be heated, the heat-shrinkable portion may have a heating portion other than the heating ring.
又,於上述實施方式中,示出了熱收縮部具有吸氣環、擴張維持環之例,但本發明並不限於此。於本發明中,熱收縮部亦可不具有吸氣環、擴張維持環。In addition, in the above-mentioned embodiment, an example was shown in which the heat-shrinkable part has the suction ring and the expansion maintenance ring, but the present invention is not limited thereto. In the present invention, the heat-shrinkable part may not have the air suction ring and the expansion maintenance ring.
又,於上述實施方式中,示出了擴展裝置具備碎片清潔器(抽吸部)之例,但本發明並不限於此。於本發明中,擴展裝置亦可不具備抽吸部。In addition, in the above-mentioned embodiment, the example in which the extension device is provided with the debris cleaner (suction unit) was shown, but the present invention is not limited thereto. In the present invention, the expansion device may not have a suction unit.
又,於上述實施方式中,示出了碎片清潔器(抽吸部)具有與晶圓之外緣對向之環狀之抽吸口之例,但本發明並不限於此。於本發明中,只要能抽吸飛散物,抽吸部之抽吸口之形狀可為任意形狀。In addition, in the above-mentioned embodiment, the example in which the debris cleaner (suction unit) has the ring-shaped suction port facing the outer edge of the wafer was shown, but the present invention is not limited thereto. In the present invention, the shape of the suction port of the suction unit may be any shape as long as it can suck the flying matter.
又,於上述實施方式中,示出了環狀之抽吸口由複數個抽吸口構成之例,但本發明並不限於此。於本發明中,環狀之抽吸口亦可由單個抽吸口構成。In addition, in the above-mentioned embodiment, the example in which the annular suction port is constituted by a plurality of suction ports was shown, but the present invention is not limited thereto. In the present invention, the annular suction port can also be composed of a single suction port.
又,於上述實施方式中,示出了擴展裝置具備冷氣供給部及冷卻單元(冷卻部)之例,但本發明並不限於此。於本發明中,擴展裝置亦可僅具備冷氣供給部及冷卻單元中之任一者作為冷卻部。又,擴展裝置亦可不具備冷卻部。In addition, in the above-mentioned embodiment, the example in which the expansion device is provided with the cold air supply part and the cooling means (cooling part) was shown, but this invention is not limited to this. In the present invention, the expansion device may include only any one of the cold air supply unit and the cooling unit as the cooling unit. In addition, the extension device does not need to include a cooling unit.
又,於上述實施方式中,示出了提昇手部(取出部)自盒部(收容部)取出晶圓環構造之方向與Y方向移動機構(移動機構)移動擴展部之方向大致平行之例,但本發明並不限於此。於本發明中,取出部自收容部取出晶圓環構造之方向亦可與移動機構移動擴展部之方向交叉。In addition, in the above-mentioned embodiment, the example in which the direction in which the lifting hand (extracting part) takes out the wafer ring structure from the cassette part (accommodating part) is substantially parallel to the direction in which the Y-direction moving mechanism (moving mechanism) moves the extension part is shown. , but the present invention is not limited thereto. In the present invention, the direction in which the take-out part takes out the wafer ring structure from the storage part may also intersect with the direction in which the moving mechanism moves the extension part.
又,於上述實施方式中,為便於說明,示出了使用按照處理流程依序進行處理之流程驅動型之流程圖說明控制處理之例,但本發明並不限於此。於本發明中,亦可藉由以事件為單位而執行處理之事件驅動型(event driven型)之處理進行控制處理。該情形時,可採用完全事件驅動型進行處理,亦可將事件驅動及流程驅動組合而進行處理。In addition, in the above-mentioned embodiment, for convenience of explanation, an example was shown in which control processing was described using a flow-driven flowchart in which processing is performed sequentially according to the processing flow, but the present invention is not limited thereto. In the present invention, control processing can also be performed by event-driven processing that executes processing in units of events. In this case, a complete event-driven method may be used for processing, or a combination of event-driven and process-driven processing may be used.
1:底板 2:盒部 3:提昇手部 4:吸附手部 5:基座 6:擴展部 7:冷氣供給部 8:冷卻單元 9:碎片清潔器 10:熱收縮部 11:紫外線照射部 12:第1控制部 13:第2控制部 14:第3控制部 15:第4控制部 16:第5控制部 17:擴展控制運算部 18:操作控制運算部 19:記憶部 21:Z方向移動機構 21a:馬達 22:晶圓盒 23:一對載置部 31:Y方向移動機構 31a:馬達 32:提昇手 41:X方向移動機構 41a:馬達 42:Z方向移動機構 42a:馬達 43:吸附手 61:Z方向移動機構 61a:馬達 62:Y方向移動機構 62a:馬達 62b:載置部 62ba:孔部 62c:軌道部 63:夾持部 63a:下側固持部 63b:上側固持部 63ba:滑行移動體 64:擴展環 71:噴嘴 71a:冷氣供給口 81:冷卻構件 81a:冷卻體 81b:珀爾帖元件 82:動力缸 91:環狀構件 92:抽吸口 100:擴展裝置 110:Z方向移動機構 110a:馬達 111:加熱環 112:吸氣環 112a:吸氣口 113:擴張維持環 121:動力缸 200:晶圓環構造 210:晶圓 210a:晶圓之外緣 220:片狀構件 220a:片狀構件之上表面 220b:片狀構件之晶圓周圍之部分 230:環狀構件 230a:環狀構件之外側面 240:缺口 250:缺口 P1:第1位置 P2:第2位置 1: Bottom plate 2: box part 3: Raise the hands 4: Absorb hands 5: base 6: Expansion 7: Air-conditioning supply department 8: cooling unit 9: Debris Cleaner 10: heat shrinking part 11: Ultraviolet irradiation department 12: 1st Control Department 13:Second control department 14: 3rd Control Division 15: 4th Control Department 16: 5th Control Department 17: Extended Control Computing Department 18:Operation control computing department 19: Memory Department 21:Z direction moving mechanism 21a: Motor 22:Wafer box 23: A pair of loading parts 31:Y direction moving mechanism 31a: motor 32: Lifting hands 41: X direction moving mechanism 41a: motor 42:Z direction moving mechanism 42a: motor 43: Adsorption hand 61:Z direction moving mechanism 61a: Motor 62:Y direction moving mechanism 62a: Motor 62b: loading part 62ba: hole 62c: track department 63: clamping part 63a: Lower holding part 63b: Upper holding part 63ba: Sliding moving body 64: Extended ring 71: Nozzle 71a: Cooling air supply port 81: Cooling components 81a: cooling body 81b: Peltier element 82: power cylinder 91: ring member 92: suction port 100: Expansion device 110:Z direction moving mechanism 110a: motor 111: heating ring 112: suction ring 112a: suction port 113: Expansion maintenance ring 121: power cylinder 200: wafer ring structure 210: Wafer 210a: the outer edge of the wafer 220: sheet component 220a: the upper surface of the sheet member 220b: The part around the wafer of the sheet-like component 230: ring member 230a: the outer side of the ring member 240: Gap 250: Gap P1: the first position P2: second position
圖1係一實施方式之擴展裝置之俯視圖。 圖2係一實施方式之擴展裝置之側視圖。 圖3係一實施方式之擴展裝置之晶圓環構造之俯視圖。 圖4係沿著圖3之101-101線之剖視圖。 圖5係一實施方式之擴展裝置之碎片清潔器之仰視圖。 圖6係一實施方式之擴展裝置之熱收縮部之仰視圖。 圖7係表示一實施方式之擴展裝置之控制類構成之方塊圖。 圖8係表示一實施方式之擴展裝置之半導體晶片製造處理之流程圖。 圖9係表示一實施方式之擴展裝置之夾持晶圓環構造前之狀態的側視圖。 圖10係表示一實施方式之擴展裝置之夾持晶圓環構造之狀態的側視圖。 圖11係表示一實施方式之擴展裝置之擴展片狀構件之狀態的側視圖。 圖12係表示一實施方式之擴展裝置之晶圓環構造、碎片清潔器及擴展環之側視圖。 圖13係表示一實施方式之擴展裝置之使片狀構件熱收縮前之狀態的側視圖。 圖14係表示一實施方式之擴展裝置之使片狀構件熱收縮時之狀態的側視圖。 圖15係表示一實施方式之擴展裝置之取出處理之流程圖。 圖16係表示一實施方式之擴展裝置之移載處理之流程圖。 圖17係表示一實施方式之擴展裝置之擴展處理之流程圖。 圖18係圖17之流程圖之後續步驟之流程圖。 圖19係表示一實施方式之擴展裝置之熱收縮處理之流程圖。 圖20係圖19之流程圖之後續步驟之流程圖。 圖21係表示一實施方式之擴展裝置之收容處理之流程圖。 Fig. 1 is a top view of an expansion device of an embodiment. Fig. 2 is a side view of an expansion device of an embodiment. Fig. 3 is a top view of the wafer ring structure of the expansion device of an embodiment. Fig. 4 is a sectional view along line 101-101 of Fig. 3 . Fig. 5 is a bottom view of the debris cleaner of the expansion device of an embodiment. Fig. 6 is a bottom view of the heat shrinkable part of the expansion device in one embodiment. Fig. 7 is a block diagram showing the configuration of the control class of the expansion device according to one embodiment. FIG. 8 is a flow chart showing the semiconductor wafer manufacturing process of the expansion device according to one embodiment. Fig. 9 is a side view showing the state before the wafer holding ring structure of the expansion device according to one embodiment. FIG. 10 is a side view showing the state of the wafer ring structure of the expansion device according to one embodiment. Fig. 11 is a side view showing a state of an expanding sheet-shaped member of an expanding device according to an embodiment. 12 is a side view showing a wafer ring structure, a debris cleaner, and an expansion ring of an expansion device according to an embodiment. Fig. 13 is a side view showing a state before heat-shrinking a sheet-like member in an expanding device according to an embodiment. Fig. 14 is a side view showing a state in which a sheet-shaped member is thermally shrunk in an expanding device according to an embodiment. Fig. 15 is a flow chart showing extraction processing of an expansion device according to an embodiment. Fig. 16 is a flow chart showing the migration process of the extension device according to one embodiment. Fig. 17 is a flowchart showing the expansion processing of the expansion device according to one embodiment. FIG. 18 is a flowchart of steps subsequent to the flowchart of FIG. 17 . Fig. 19 is a flow chart showing the heat shrinking process of the expansion device according to one embodiment. FIG. 20 is a flow chart of steps subsequent to the flow chart of FIG. 19 . Fig. 21 is a flow chart showing storage processing of an extension device according to one embodiment.
1:底板 1: Bottom plate
2:盒部 2: box part
3:提昇手部 3: Raise the hands
4:吸附手部 4: Absorb hands
5:基座 5: base
6:擴展部 6: Expansion
9:碎片清潔器 9: Debris Cleaner
10:熱收縮部 10: heat shrinking part
11:紫外線照射部 11: Ultraviolet irradiation department
21:Z方向移動機構 21:Z direction moving mechanism
21a:馬達 21a: Motor
31:Y方向移動機構 31:Y direction moving mechanism
31a:馬達 31a: motor
32:提昇手 32: Lifting hands
41:X方向移動機構 41: X direction moving mechanism
41a:馬達 41a: motor
42:Z方向移動機構 42:Z direction moving mechanism
42a:馬達 42a: motor
43:吸附手 43: Adsorption hand
61:Z方向移動機構 61:Z direction moving mechanism
61a:馬達 61a: Motor
62:Y方向移動機構 62:Y direction moving mechanism
63:夾持部 63: clamping part
63b:上側固持部 63b: Upper holding part
100:擴展裝置 100: Expansion device
110:Z方向移動機構 110:Z direction moving mechanism
110a:馬達 110a: motor
111:加熱環 111: heating ring
112:吸氣環 112: suction ring
113:擴張維持環 113: Expansion maintenance ring
200:晶圓環構造 200: wafer ring structure
210:晶圓 210: Wafer
220:片狀構件 220: sheet component
230:環狀構件 230: ring member
P1:第1位置 P1: the first position
P2:第2位置 P2: second position
Claims (10)
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WOPCT/JP2021/033734 | 2021-09-14 | ||
PCT/JP2021/033734 WO2023042259A1 (en) | 2021-09-14 | 2021-09-14 | Expansion device |
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TWI788222B true TWI788222B (en) | 2022-12-21 |
TW202312252A TW202312252A (en) | 2023-03-16 |
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KR (1) | KR20240021246A (en) |
CN (1) | CN117716471A (en) |
DE (1) | DE112021007867T5 (en) |
TW (1) | TWI788222B (en) |
WO (1) | WO2023042259A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010010112A1 (en) * | 1999-01-22 | 2001-08-02 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device |
US20080010818A1 (en) * | 2004-05-24 | 2008-01-17 | Shoriki Narita | Wafer Expanding Device, Component Feeder, and Expanding Method for Wafer Sheet |
JP4288392B2 (en) * | 2003-09-29 | 2009-07-01 | 株式会社東京精密 | Expanding method |
Family Cites Families (4)
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JP5706235B2 (en) * | 2011-05-26 | 2015-04-22 | 株式会社ディスコ | Laser processing equipment |
JP6004675B2 (en) * | 2012-03-07 | 2016-10-12 | 株式会社ディスコ | Laser processing equipment |
JP6901909B2 (en) * | 2017-06-05 | 2021-07-14 | 株式会社ディスコ | Expanding method and expanding device |
JP3222036U (en) * | 2019-04-23 | 2019-07-04 | 株式会社ディスコ | UV irradiation device |
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2021
- 2021-09-14 JP JP2023547966A patent/JPWO2023042259A1/ja active Pending
- 2021-09-14 DE DE112021007867.4T patent/DE112021007867T5/en active Pending
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- 2021-09-14 CN CN202180101115.8A patent/CN117716471A/en active Pending
- 2021-09-14 WO PCT/JP2021/033734 patent/WO2023042259A1/en active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010010112A1 (en) * | 1999-01-22 | 2001-08-02 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device |
JP4288392B2 (en) * | 2003-09-29 | 2009-07-01 | 株式会社東京精密 | Expanding method |
US20080010818A1 (en) * | 2004-05-24 | 2008-01-17 | Shoriki Narita | Wafer Expanding Device, Component Feeder, and Expanding Method for Wafer Sheet |
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CN117716471A (en) | 2024-03-15 |
KR20240021246A (en) | 2024-02-16 |
JPWO2023042259A1 (en) | 2023-03-23 |
DE112021007867T5 (en) | 2024-04-04 |
TW202312252A (en) | 2023-03-16 |
WO2023042259A1 (en) | 2023-03-23 |
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