TWI786292B - 晶片的製造方法 - Google Patents

晶片的製造方法 Download PDF

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Publication number
TWI786292B
TWI786292B TW108115883A TW108115883A TWI786292B TW I786292 B TWI786292 B TW I786292B TW 108115883 A TW108115883 A TW 108115883A TW 108115883 A TW108115883 A TW 108115883A TW I786292 B TWI786292 B TW I786292B
Authority
TW
Taiwan
Prior art keywords
workpiece
wafer
modified layer
laser beam
dividing
Prior art date
Application number
TW108115883A
Other languages
English (en)
Chinese (zh)
Other versions
TW201947645A (zh
Inventor
淀良彰
趙金艶
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201947645A publication Critical patent/TW201947645A/zh
Application granted granted Critical
Publication of TWI786292B publication Critical patent/TWI786292B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P58/00—Singulating wafers or substrates into multiple chips, i.e. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108115883A 2018-05-10 2019-05-08 晶片的製造方法 TWI786292B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018091424A JP7139036B2 (ja) 2018-05-10 2018-05-10 チップの製造方法
JP2018-091424 2018-05-10

Publications (2)

Publication Number Publication Date
TW201947645A TW201947645A (zh) 2019-12-16
TWI786292B true TWI786292B (zh) 2022-12-11

Family

ID=68537557

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108115883A TWI786292B (zh) 2018-05-10 2019-05-08 晶片的製造方法

Country Status (4)

Country Link
JP (1) JP7139036B2 (https=)
KR (1) KR102682696B1 (https=)
CN (1) CN110491784B (https=)
TW (1) TWI786292B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023146720A (ja) * 2022-03-29 2023-10-12 株式会社ディスコ チップの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) * 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP2003088977A (ja) * 2002-03-29 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2005086175A (ja) 2003-09-11 2005-03-31 Hamamatsu Photonics Kk 半導体薄膜の製造方法、半導体薄膜、半導体薄膜チップ、電子管、及び光検出素子
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP6504686B2 (ja) * 2013-09-20 2019-04-24 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP6295154B2 (ja) * 2014-07-18 2018-03-14 株式会社ディスコ ウェーハの分割方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2003088974A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) * 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
KR102682696B1 (ko) 2024-07-05
JP7139036B2 (ja) 2022-09-20
JP2019197825A (ja) 2019-11-14
CN110491784B (zh) 2024-02-20
CN110491784A (zh) 2019-11-22
TW201947645A (zh) 2019-12-16
KR20190129736A (ko) 2019-11-20

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