TWI786292B - Wafer Manufacturing Method - Google Patents

Wafer Manufacturing Method Download PDF

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TWI786292B
TWI786292B TW108115883A TW108115883A TWI786292B TW I786292 B TWI786292 B TW I786292B TW 108115883 A TW108115883 A TW 108115883A TW 108115883 A TW108115883 A TW 108115883A TW I786292 B TWI786292 B TW I786292B
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workpiece
wafer
modified layer
laser beam
dividing
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TW201947645A (en
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淀良彰
趙金艶
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element

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Abstract

[課題]提供一種晶片的製造方法，其可以在不使用擴展片的情形下對板狀的被加工物進行分割來製造複數個晶片。 [解決手段]包含：第1雷射加工步驟，將對被加工物具有穿透性之波長的雷射光束沿著分割預定線僅對晶片區域照射，而形成沿著晶片區域的分割預定線的第1改質層；第2雷射加工步驟，將對被加工物具有穿透性之波長的雷射光束沿著晶片區域與外周剩餘區域的交界照射，而形成沿著此交界的第2改質層；及分割步驟，對被加工物賦與力，以將被加工物分割成一個個的晶片，在分割步驟中，是藉由一次的冷卻或加熱來賦與力，以將被加工物分割成一個個的晶片。[Problem] To provide a wafer manufacturing method capable of dividing a plate-shaped workpiece to manufacture a plurality of wafers without using an expansion sheet. [Solution] includes: a first laser processing step of irradiating only the wafer region with a laser beam having a wavelength penetrating to the workpiece along the planned dividing line to form the planned dividing line along the wafer region The first modified layer; the second laser processing step, irradiating the laser beam with a wavelength that is penetrating to the processed object along the junction of the wafer area and the remaining peripheral area to form a second modified layer along the junction. and the dividing step, imparting force to the processed object, so that the processed object is divided into wafers one by one, and in the dividing step, the force is applied by one cooling or heating, so that the processed object Divided into individual wafers.

Description

晶片的製造方法Wafer Manufacturing Method

發明領域 本發明是有關於一種分割板狀的被加工物來製造複數個晶片的晶片的製造方法。field of invention The present invention relates to a method of manufacturing a wafer by dividing a plate-like workpiece to manufacture a plurality of wafers.

發明背景 為了將以晶圓為代表之板狀的被加工物(工件)分割成複數個晶片，已知有下述方法：使具有穿透性的雷射光束於被加工物之內部聚光，以形成藉由多光子吸收而改質的改質層(改質區域)(參照例如專利文獻1)。由於改質層相較於其他區域會較為脆弱，因此藉由沿著分割預定線(切割道)形成改質層後再對被加工物施加力之作法，能夠以此改質層為起點來將被加工物分割成複數個晶片。Background of the invention In order to divide a plate-shaped workpiece (workpiece) represented by a wafer into a plurality of wafers, the following method is known: condensing a penetrating laser beam inside the workpiece to form A modified layer (modified region) modified by multiphoton absorption (see, for example, Patent Document 1). Since the modified layer is weaker than other regions, by forming the modified layer along the planned dividing line (cutting line) and then applying force to the workpiece, the modified layer can be used as a starting point to The workpiece is divided into a plurality of wafers.

對形成有改質層的被加工物施加力之時，可採用例如下述的方法：將具有伸張性的擴展片(擴展膠帶)黏貼於被加工物來進行擴張(參照例如專利文獻2)。在該方法中，通常是在照射雷射光束以在被加工物中形成改質層之前，將擴展片黏貼於被加工物，之後，於形成改質層後使擴展片擴張而將被加工物分割成複數個晶片。 先前技術文獻 專利文獻When a force is applied to the workpiece on which the modified layer is formed, for example, a method of affixing a stretchable expanding sheet (expanding tape) to the workpiece to expand (see, for example, Patent Document 2). In this method, usually, before the laser beam is irradiated to form a modified layer in the workpiece, the expansion sheet is attached to the workpiece, and after the modification layer is formed, the expansion sheet is expanded to separate the workpiece. Divided into multiple wafers. prior art literature patent documents

專利文獻1：日本專利特開2002-192370號公報 專利文獻2：日本專利特開2010-206136號公報Patent Document 1: Japanese Patent Laid-Open No. 2002-192370 Patent Document 2: Japanese Patent Laid-Open No. 2010-206136

發明概要 發明欲解決之課題 然而，在使如上述之擴展片擴張的方法中，因為使用後的擴展片無法再度使用，所以也易於使在晶片的製造上所需要的費用變高。尤其，由於讓黏著材難以殘留在晶片之高性能的擴展片在價格上也較高，因此若是使用那種擴展片時，在晶片的製造上所需要的費用也會變高。Summary of the invention The problem to be solved by the invention However, in the method of expanding the expansion sheet as described above, since the used expansion sheet cannot be reused, the cost required for the manufacture of the wafer tends to increase. In particular, since the high-performance expansion sheet that makes it difficult for the adhesive to remain on the wafer is also expensive, the cost required for manufacturing the wafer also increases when such an expansion sheet is used.

本發明是有鑒於所述的問題點而作成的發明，其目的在於提供一種晶片的製造方法，其可以在不使用擴展片的情形下對板狀的被加工物進行分割而製造複數個晶片。 用以解決課題之手段The present invention was made in view of the above-mentioned problems, and an object of the present invention is to provide a wafer manufacturing method capable of manufacturing a plurality of wafers by dividing a plate-shaped workpiece without using expansion sheets. means to solve problems

根據本發明的一態樣，可提供一種晶片的製造方法，是從被加工物來製造複數個晶片，前述被加工物具有藉由交叉的複數條分割預定線區劃出複數個成為該晶片的區域的晶片區域、及包圍該晶片區域的外周剩餘區域，前述晶片的製造方法具備： 保持步驟，以保持工作台直接保持被加工物； 第1雷射加工步驟，在實施該保持步驟後，以將對被加工物具有穿透性之波長的雷射光束的聚光點定位在已保持於該保持工作台之被加工物的內部的方式，來將該雷射光束沿著該分割預定線僅對被加工物的該晶片區域照射，而沿著該晶片區域的該分割預定線形成第1改質層，並且將該外周剩餘區域設為未形成有該第1改質層的補強部； 第2雷射加工步驟，在實施該保持步驟後，以將對被加工物具有穿透性之波長的雷射光束的聚光點定位在已保持於該保持工作台之被加工物的內部的方式，來將該雷射光束沿著該晶片區域與該外周剩餘區域的交界照射，而沿著該交界形成第2改質層； 搬出步驟，在實施該第1雷射加工步驟及該第2雷射加工步驟後，從該保持工作台搬出被加工物；及 分割步驟，在實施該搬出步驟後，對被加工物賦與力來將被加工物分割成一個個的該晶片， 又，在該分割步驟中，是藉由一次的冷卻或加熱來賦與該力，以將被加工物分割成一個個的該晶片。According to one aspect of the present invention, there is provided a method of manufacturing a wafer, which is to manufacture a plurality of wafers from a workpiece having a plurality of regions demarcated to become the wafer by a plurality of intersecting dividing lines. The wafer area, and the peripheral remaining area surrounding the wafer area, the manufacturing method of the aforementioned wafer has: Holding steps to keep the workbench directly holding the workpiece; In the first laser processing step, after the holding step is carried out, the focus point of the laser beam having a wavelength penetrating to the workpiece is positioned inside the workpiece held on the holding table. In this way, the laser beam is irradiated only on the wafer region of the workpiece along the planned dividing line, and the first modified layer is formed along the planned dividing line of the wafer region, and the remaining peripheral region is set as It is a reinforcing part where the first modified layer is not formed; In the second laser processing step, after the holding step is carried out, the focus point of the laser beam having a wavelength penetrating to the workpiece is positioned inside the workpiece held on the holding table. way, to irradiate the laser beam along the boundary between the wafer region and the remaining peripheral region, and form a second modified layer along the boundary; an unloading step of unloading the object to be processed from the holding table after performing the first laser processing step and the second laser processing step; and In the dividing step, after performing the unloading step, a force is applied to the workpiece to divide the workpiece into individual wafers, In addition, in the dividing step, the force is applied by cooling or heating once, so that the workpiece is divided into individual wafers.

在本發明的一態樣中，亦可更具備補強部去除步驟，前述該補強部去除步驟是在實施該第1雷射加工步驟及該第2雷射加工步驟後，且實施該分割步驟前，將該補強部去除。又，在本發明的一態樣中，亦可為：該保持工作台的上表面是藉由柔軟的材料所構成，且在該保持步驟中，是以該柔軟的材料保持被加工物的正面側。 發明效果In one aspect of the present invention, it is also possible to further include a reinforcing portion removing step, the aforementioned reinforcing portion removing step is performed after the first laser processing step and the second laser processing step, and before the dividing step , remove the reinforcing part. In addition, in one aspect of the present invention, the upper surface of the holding table may be made of a soft material, and in the holding step, the front surface of the workpiece may be held with the soft material. side. Invention effect

在本發明的一態樣之晶片的製造方法中，由於是在以保持工作台直接保持被加工物的狀態下，僅對被加工物的晶片區域照射雷射光束，而形成沿著分割預定線的第1改質層，並對晶片區域與外周剩餘區域的交界照射雷射光束，而形成沿著交界的第2改質層後，藉由一次的冷卻或加熱來賦與力而將被加工物分割成一個個的晶片，因此毋須為了對被加工物施加力以分割成一個個的晶片而使用擴展片。如此，根據本發明的一態樣的晶片的製造方法，可以在不使用擴展片的情形下對板狀的被加工物即被加工物進行分割，以製造複數個晶片。In the wafer manufacturing method according to one aspect of the present invention, since the workpiece is directly held by the holding table, only the wafer region of the workpiece is irradiated with a laser beam, and the wafer along the planned dividing line is formed. The first modified layer is irradiated with a laser beam to the boundary between the wafer area and the remaining peripheral area to form a second modified layer along the boundary, and then it is processed by applying force by one cooling or heating The object is divided into individual wafers, so it is not necessary to use an expansion sheet in order to apply force to the workpiece to be divided into individual wafers. In this way, according to the wafer manufacturing method of one aspect of the present invention, a plate-shaped workpiece can be divided without using an expansion sheet to manufacture a plurality of wafers.

又，在本發明的一態樣的晶片的製造方法中，由於將雷射光束僅對被加工物的晶片區域照射來形成沿著分割預定線的第1改質層，並且將外周剩餘區域設為未形成有第1改質層的補強部，因此藉由此補強部可將晶片區域補強。據此，也不會有因在搬送等之時所施加之力導致被加工物被分割成一個個的晶片，而變得無法適當地搬送被加工物之情形。In addition, in the wafer manufacturing method according to one aspect of the present invention, the first modified layer along the planned division line is formed by irradiating the laser beam only on the wafer region of the workpiece, and the remaining outer peripheral region is set to Since it is a reinforcing part where the first modified layer is not formed, the wafer region can be reinforced by this reinforcing part. Accordingly, there is no possibility that the workpiece is divided into individual wafers due to the force applied at the time of conveyance or the like, and the workpiece cannot be properly conveyed.

用以實施發明之形態 參照附加圖式，說明本發明的一個態樣之實施形態。本實施形態之晶片的製造方法包含保持步驟(參照圖3(A))、第1雷射加工步驟(參照圖3(B)等)、第2雷射加工步驟(參照圖4等)、搬出步驟、補強部去除步驟(參照圖6)、及分割步驟(參照圖7)。form for carrying out the invention An embodiment of one aspect of the present invention will be described with reference to the attached drawings. The wafer manufacturing method of this embodiment includes a holding step (see FIG. 3(A)), a first laser processing step (see FIG. 3(B) etc.), a second laser processing step (see FIG. 4 etc.), a carrying out step, a reinforcement portion removal step (see FIG. 6 ), and a division step (see FIG. 7 ).

在保持步驟中，是以工作夾台(保持工作台)直接保持被加工物(工件)，前述被加工物具有藉由分割預定線而區劃出複數個區域的晶片區域、及包圍晶片區域的外周剩餘區域。在第1雷射加工步驟中，是照射對被加工物具有穿透性之波長的雷射光束，而沿著晶片區域的分割預定線形成改質層(第1改質層)，並且將外周剩餘區域設為未形成有改質層的補強部。In the holding step, the workpiece (workpiece) is directly held by the jig table (holding table), and the workpiece has a wafer region defined by a plurality of division lines and an outer periphery surrounding the wafer region. remaining area. In the first laser processing step, a modified layer (first modified layer) is formed along the planned division line of the wafer region by irradiating a laser beam with a wavelength that is transparent to the workpiece, and the outer peripheral The remaining area was defined as a reinforcing portion in which no modified layer was formed.

在第2雷射加工步驟中，是照射對被加工物具有穿透性之波長的雷射光束，而沿著晶片區域與外周剩餘區域的交界形成改質層(第2改質層)。搬出步驟是將被加工物從工作夾台搬出。在補強部去除步驟中，是從被加工物去除補強部。在分割步驟中，是藉由一次的冷卻或加熱來賦與力，以將被加工物分割成複數個晶片。以下，詳細敘述本實施形態的晶片的製造方法。In the second laser processing step, a modified layer (second modified layer) is formed along the boundary between the wafer region and the remaining peripheral region by irradiating a laser beam having a wavelength that is transparent to the workpiece. The unloading step is to unload the workpiece from the work holder. In the reinforcing portion removing step, the reinforcing portion is removed from the workpiece. In the dividing step, the workpiece is divided into a plurality of wafers by imparting force by one cooling or heating. Hereinafter, the wafer manufacturing method of this embodiment will be described in detail.

圖1是示意地顯示在本實施形態中所使用的被加工物(工件)11的構成例的立體圖。如圖1所示，被加工物11是以例如矽(Si)、砷化鎵(GaAs)、磷化銦(InP)、氮化鎵(GaN)、碳化矽(SiC)等的半導體、藍寶石(Al2 O3 )、鈉玻璃、硼矽酸鹽玻璃、石英玻璃等之介電體(絕緣體)、或是鉭酸鋰(LiTaO3 )、鈮酸鋰(LiNbO3 )等的鐵電體(鐵電體結晶)所形成之圓盤狀的晶圓(基板)。FIG. 1 is a perspective view schematically showing a configuration example of a workpiece (work) 11 used in the present embodiment. As shown in FIG. 1 , the workpiece 11 is a semiconductor such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), sapphire ( Dielectrics (insulators ) such as Al 2 O 3 ), sodium glass, borosilicate glass, and quartz glass, or ferroelectrics ( iron A disc-shaped wafer (substrate) formed by an electrical crystal).

被加工物11的正面11a側是以交叉之複數條分割預定線(切割道)13而區劃為複數個成為晶片的區域15。再者，在以下是將包含複數個成為晶片的區域15之全部的大致圓形的區域稱為晶片區域11c，將包圍晶片區域11c之環狀的區域稱為外周剩餘區域11d。The front surface 11a side of the workpiece 11 is divided into a plurality of regions 15 to be wafers by a plurality of dividing lines (scribing lines) 13 crossing each other. Hereinafter, a substantially circular area including all of the plurality of wafer areas 15 is referred to as a wafer area 11c, and an annular area surrounding the wafer area 11c is referred to as an outer periphery remaining area 11d.

在晶片區域11c內的各區域15中，可因應於需要而形成有IC(積體電路，Integrated Circuit)、MEMS(微機電系統，Micro Electro Mechanical Systems)、LED(發光二極體，Light Emitting Diode)、LD(雷射二極體，Laser Diode)、光二極體(Photodiode)、SAW(表面聲波，Surface Acoustic Wave)濾波器、BAW(體聲波，Bulk Acoustic Wave)濾波器等之器件。In each area 15 in the wafer area 11c, IC (Integrated Circuit, Integrated Circuit), MEMS (Micro Electro Mechanical System, Micro Electro Mechanical Systems), LED (Light Emitting Diode, Light Emitting Diode) can be formed according to needs. ), LD (Laser Diode), Photodiode (Photodiode), SAW (Surface Acoustic Wave, Surface Acoustic Wave) filter, BAW (Bulk Acoustic Wave, Bulk Acoustic Wave) filter and other devices.

藉由沿著分割預定線13對此被加工物11進行分割，可獲得複數個晶片。具體而言，在被加工物11為矽晶圓的情況下，可獲得例如作為記憶體或感測器等而發揮功能的晶片。在被加工物11為砷化鎵基板，或磷化銦基板、氮化鎵基板的情況下，可獲得例如作為發光元件或受光元件等而發揮功能的晶片。By dividing the workpiece 11 along the planned division lines 13, a plurality of wafers can be obtained. Specifically, when the workpiece 11 is a silicon wafer, for example, a wafer that functions as a memory or a sensor can be obtained. When the workpiece 11 is a gallium arsenide substrate, an indium phosphide substrate, or a gallium nitride substrate, a wafer that functions as a light emitting element or a light receiving element, for example, can be obtained.

在被加工物11為碳化矽基板的情況下，可獲得例如作為功率器件等而發揮功能的晶片。在被加工物11為藍寶石基板的情況下，可獲得例如作為發光元件等而發揮功能的晶片。在被加工物11為以鈉玻璃或硼矽玻璃、石英玻璃等所形成的玻璃基板的情況下，可獲得例如作為光學零件或外蓋構件(外蓋玻璃)而發揮功能的晶片。When the workpiece 11 is a silicon carbide substrate, for example, a wafer that functions as a power device or the like can be obtained. When the workpiece 11 is a sapphire substrate, for example, a wafer that functions as a light emitting element or the like can be obtained. When the workpiece 11 is a glass substrate formed of soda glass, borosilicate glass, quartz glass, or the like, a wafer that functions as an optical component or a cover member (cover glass) can be obtained, for example.

在被加工物11為以鉭酸鋰、或鈮酸鋰等之鐵電體所形成的鐵電體基板(鐵電體結晶基板)的情況下，可獲得例如作為濾波器或致動器等而發揮功能的晶片。再者，對被加工物11的材質、形狀、構造、大小、厚度等並未限制。同樣地，對形成在成為晶片的區域15上的器件的種類、數量、形狀、構造、大小、配置等也未限制。在成為晶片的區域15上亦可未形成有器件。In the case where the workpiece 11 is a ferroelectric substrate (ferroelectric crystal substrate) formed of a ferroelectric such as lithium tantalate or lithium niobate, for example, it can be obtained as a filter or an actuator. A functioning chip. Furthermore, the material, shape, structure, size, thickness, etc. of the workpiece 11 are not limited. Likewise, there are no limitations on the type, number, shape, structure, size, arrangement, etc. of the devices formed on the region 15 to be the wafer. No device may be formed on the region 15 to be the wafer.

在本實施形態之晶片的製造方法中，是使用圓盤狀的矽晶圓作為被加工物11，來製造複數個晶片。具體而言，首先，是進行以工作夾台直接保持此被加工物11的保持步驟。圖2是示意地顯示在本實施形態中所使用的雷射加工裝置之構成例的立體圖。In the wafer manufacturing method of this embodiment, a disc-shaped silicon wafer is used as the workpiece 11 to manufacture a plurality of wafers. Specifically, first, a holding step of directly holding the workpiece 11 with a work chuck is performed. FIG. 2 is a perspective view schematically showing a configuration example of a laser processing apparatus used in this embodiment.

如圖2所示，雷射加工裝置2具備有搭載各構成要件之基台4。於基台4的上表面設有水平移動機構8，前述水平移動機構8是讓用於吸引、保持被加工物11的工作夾台(保持工作台)6於X軸方向(加工進給方向)及Y軸方向(分度進給方向)上移動。水平移動機構8具備有固定在基台4的上表面且大致平行於X軸方向的一對X軸導軌10。As shown in FIG. 2 , the laser processing apparatus 2 includes a base 4 on which various components are mounted. A horizontal movement mechanism 8 is provided on the upper surface of the base 4, and the aforementioned horizontal movement mechanism 8 is used to attract and hold the workpiece 11. and Y-axis direction (index feed direction) to move. The horizontal movement mechanism 8 includes a pair of X-axis guide rails 10 fixed to the upper surface of the base 4 and substantially parallel to the X-axis direction.

在X軸導軌10上，可滑動地安裝有X軸移動工作台12。在X軸移動工作台12之背面側(下表面側)設置有螺帽部(未圖示)，且在該螺帽部螺合有大致平行於X軸導軌10之X軸滾珠螺桿14。On the X-axis guide rail 10, an X-axis moving table 12 is slidably installed. A nut part (not shown) is provided on the back side (lower surface side) of the X-axis movable table 12, and an X-axis ball screw 14 substantially parallel to the X-axis guide rail 10 is screwed to the nut part.

在X軸滾珠螺桿14的一端部連結有X軸脈衝馬達16。藉由以X軸脈衝馬達16使X軸滾珠螺桿14旋轉，X軸移動工作台12即可沿著X軸導軌10在X軸方向上移動。在相鄰於X軸導軌10的位置上設置有用於在X軸方向上檢測X軸移動工作台12之位置的X軸尺規18。An X-axis pulse motor 16 is connected to one end of the X-axis ball screw 14 . By rotating the X-axis ball screw 14 with the X-axis pulse motor 16 , the X-axis moving table 12 can move in the X-axis direction along the X-axis guide rail 10 . An X-axis ruler 18 for detecting the position of the X-axis movable table 12 in the X-axis direction is provided at a position adjacent to the X-axis guide rail 10 .

在X軸移動工作台12的正面(上表面)，固定有大致平行於Y軸方向的一對Y軸導軌20。在Y軸導軌20上，可滑動地安裝有Y軸移動工作台22。在Y軸移動工作台22之背面側(下表面側)，設置有螺帽部(未圖示)，且在此螺帽部螺合有與Y軸導軌20大致平行之Y軸滾珠螺桿24。On the front (upper surface) of the X-axis movable table 12, a pair of Y-axis guide rails 20 substantially parallel to the Y-axis direction is fixed. On the Y-axis guide rail 20, a Y-axis moving table 22 is slidably installed. A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis movable table 22, and a Y-axis ball screw 24 substantially parallel to the Y-axis guide rail 20 is screwed to the nut portion.

在Y軸滾珠螺桿24的一端部連結有Y軸脈衝馬達26。藉由以Y軸脈衝馬達26使Y軸滾珠螺桿24旋轉，Y軸移動工作台22即可沿著Y軸導軌20在Y軸方向上移動。在相鄰於Y軸導軌20的位置上設置有用於在Y軸方向上檢測Y軸移動工作台22之位置的Y軸尺規28。A Y-axis pulse motor 26 is connected to one end of the Y-axis ball screw 24 . By rotating the Y-axis ball screw 24 with the Y-axis pulse motor 26 , the Y-axis moving table 22 can move in the Y-axis direction along the Y-axis guide rail 20 . A Y-axis ruler 28 for detecting the position of the Y-axis movable table 22 in the Y-axis direction is provided at a position adjacent to the Y-axis guide rail 20 .

在Y軸移動工作台22的正面側(上表面側)設置有支撐台30，且在此支撐台30的上部配置有工作夾台6。於工作夾台6的正面(上表面)是成為吸引、保持上述之被加工物11的背面11b側(或正面11a側)的保持面6a。保持面6a是以例如氧化鋁等的硬度高的多孔質材所構成。其中，保持面6a亦可利用以聚乙烯或環氧等樹脂為代表的柔軟的材料來構成。A support table 30 is provided on the front side (upper surface side) of the Y-axis movable table 22 , and a work chuck 6 is arranged on the upper portion of the support table 30 . On the front (upper surface) of the work chuck 6 is a holding surface 6a that attracts and holds the back surface 11b side (or front 11a side) of the workpiece 11 described above. The holding surface 6 a is made of, for example, a porous material with high hardness such as alumina. However, the holding surface 6a may be made of a flexible material represented by resin such as polyethylene or epoxy.

此保持面6a是透過形成於工作夾台6的內部的吸引路6b(參照圖3(A)等)、或閥32(參照圖3(A)等)等而連接到吸引源34(參照圖3(A)等)。在工作夾台6的下方設有旋轉驅動源(未圖示)，工作夾台6是藉由此旋轉驅動源而繞著大致平行於Z軸方向的旋轉軸旋轉。This holding surface 6a is connected to the suction source 34 (refer to FIG. 3(A) etc.). A rotary drive source (not shown) is provided below the work clamp table 6, and the work clamp table 6 is rotated around a rotation axis substantially parallel to the Z-axis direction by the rotary drive source.

在水平移動機構8的後方設有柱狀的支撐構造36。在支撐構造36的上部固定有於Y軸方向上延伸的支撐臂38，在此支撐臂38的前端部設有雷射照射單元40，前述雷射照射單元40是脈衝振盪產生對被加工物11具有穿透性之波長(難以被吸收之波長)的雷射光束17(參照圖3(B))，來朝工作夾台6上的被加工物11照射。A columnar support structure 36 is provided behind the horizontal movement mechanism 8 . A support arm 38 extending in the Y-axis direction is fixed on the upper part of the support structure 36, and a laser irradiation unit 40 is provided at the front end of the support arm 38. A laser beam 17 (refer to FIG. 3(B) ) having a penetrating wavelength (a wavelength that is difficult to be absorbed) is irradiated to the workpiece 11 on the chuck table 6 .

在相鄰於雷射照射單元40的位置上設有相機42，前述相機42是對被加工物11的正面11a側或背面11b側進行拍攝。以相機42拍攝被加工物11等而形成的圖像，是在例如調整被加工物11與雷射照射單元40的位置等時使用。A camera 42 is provided at a position adjacent to the laser irradiation unit 40 , and the camera 42 photographs the front 11 a side or the back 11 b side of the workpiece 11 . The images formed by photographing the workpiece 11 and the like with the camera 42 are used, for example, when adjusting the positions of the workpiece 11 and the laser irradiation unit 40 .

工作夾台6、水平移動機構8、雷射照射單元40、相機42等的構成要件是連接到控制單元(未圖示)。控制單元是控制各構成要件，以適當地加工被加工物11。Components such as the work clamp table 6, the horizontal movement mechanism 8, the laser irradiation unit 40, and the camera 42 are connected to a control unit (not shown). The control unit controls each component so that the workpiece 11 can be processed appropriately.

圖3(A)是用於針對保持步驟進行說明之截面圖。再者，在圖3(A)中，是以功能方塊來表示一部分的構成要件。在保持步驟中，如圖3(A)所示，是例如使被加工物11的背面11b接觸於工作夾台6的保持面6a。然後，打開閥32以使吸引源34的負壓作用於保持面6a。FIG. 3(A) is a cross-sectional view for explaining the holding step. In addition, in FIG. 3(A), some constituent elements are shown by functional blocks. In the holding step, as shown in FIG. 3(A), for example, the back surface 11 b of the workpiece 11 is brought into contact with the holding surface 6 a of the work chuck 6 . Then, the valve 32 is opened so that the negative pressure of the suction source 34 acts on the holding surface 6a.

藉此，被加工物11會在正面11a側露出於上方的狀態下被吸引、保持在工作夾台6上。再者，在本實施形態中，如圖3(A)所示，是以工作夾台6直接保持被加工物11的背面11b側。亦即，在本實施形態中，不需要對被加工物11黏貼擴展片。Thereby, the workpiece 11 is sucked and held on the work chuck 6 with the front surface 11 a side exposed upward. In addition, in this embodiment, as shown in FIG. 3(A), the back surface 11b side of the workpiece 11 is directly held by the work chuck 6 . That is, in this embodiment, it is not necessary to stick the expansion sheet to the workpiece 11 .

在保持步驟之後，是進行將雷射光束17沿著分割預定線13照射來形成改質層(第1改質層)之第1雷射加工步驟、及將雷射光束17沿著晶片區域11c與外周剩餘區域11d的交界照射來形成改質層(第2改質層)之第2雷射加工步驟。再者，在本實施形態中，是針對在第1雷射加工步驟之後進行第2雷射加工步驟的情況進行說明。After the holding step, the first laser processing step of forming a modified layer (first modified layer) by irradiating the laser beam 17 along the planned dividing line 13, and irradiating the laser beam 17 along the wafer region 11c The second laser processing step of forming a modified layer (second modified layer) by irradiating the boundary with the remaining peripheral region 11d. In addition, in this embodiment, the case where the 2nd laser processing process is performed after a 1st laser processing process is demonstrated.

圖3(B)是用於針對第1雷射加工步驟進行說明的截面圖，圖4是用於針對第2雷射加工步驟進行說明的截面圖，圖5(A)是示意地顯示形成改質層19後的被加工物11的狀態的平面圖，圖5(B)是示意地顯示改質層19的截面圖。再者，在圖3(B)及圖4中，是以功能方塊來表示一部分的構成要件。3(B) is a sectional view for explaining the first laser processing step, FIG. 4 is a sectional view for describing the second laser processing step, and FIG. FIG. 5(B) is a plan view of the state of the workpiece 11 behind the modified layer 19 , and FIG. 5(B) is a cross-sectional view schematically showing the modified layer 19 . In addition, in FIG. 3(B) and FIG. 4, a part of constituent elements are shown by a functional block.

在第1雷射加工步驟中，首先是使工作夾台6旋轉，以例如將成為對象的分割預定線13的延伸方向設成相對於X軸方向平行。接著，使工作夾台6移動，而將雷射照射單元40的位置於成為對象的分割預定線13的延長線上對準。然後，如圖3(B)所示，使工作夾台6於X軸方向(即，對象的分割預定線13的延伸方向)上移動。In the first laser processing step, first, the chuck table 6 is rotated so that, for example, the extending direction of the target dividing line 13 is parallel to the X-axis direction. Next, the chuck table 6 is moved to align the position of the laser irradiation unit 40 on the extension line of the target dividing line 13 . Then, as shown in FIG. 3(B), the chuck table 6 is moved in the X-axis direction (that is, the direction in which the target dividing line 13 extends).

之後，在雷射照射單元40已到達存在於成為對象之分割預定線13上的2處之晶片區域11c與外周剩餘區域11d之交界的其中一邊的正上方的時間點上，從此雷射照射單元40開始進行對被加工物11具有穿透性之波長的雷射光束17的照射。在本實施形態中，是如圖3(B)所示，從配置於被加工物11之上方的雷射照射單元40，朝向被加工物11的正面11a照射雷射光束17。Thereafter, when the laser irradiation unit 40 has reached directly above one of the borders between the wafer region 11c and the remaining peripheral region 11d at two locations on the target dividing line 13, the laser irradiation unit 40 Start to irradiate the laser beam 17 with a wavelength that is penetrating to the workpiece 11 . In this embodiment, as shown in FIG. 3(B), the laser beam 17 is irradiated toward the front surface 11a of the workpiece 11 from the laser irradiation unit 40 arranged above the workpiece 11 .

此雷射光束17的照射是持續至雷射照射單元40到達存在於成為對象之分割預定線13上的2處之晶片區域11c與外周剩餘區域11d之交界的另一邊的正上方為止。亦即，在此是將雷射光束17沿著對象的分割預定線13且僅在晶片區域11c內照射。Irradiation of the laser beam 17 is continued until the laser irradiation unit 40 reaches directly above the other boundary between the wafer region 11c and the remaining peripheral region 11d existing on the target dividing line 13 . That is, here, the laser beam 17 is irradiated along the planned division line 13 of the object and only within the wafer region 11c.

又，此雷射光束17是以將聚光點定位在被加工物11的內部之離正面11a(或背面11b)規定的深度的位置的方式來進行照射。如此，可以藉由使對被加工物11具有穿透性之波長的雷射光束17聚光在被加工物11的內部，以在聚光點及其附近藉由多光子吸收將被加工物11的一部分改質，而形成成為分割之起點的改質層19(改質層19a等)。In addition, the laser beam 17 is irradiated so that the focal point is positioned at a position within the workpiece 11 at a predetermined depth from the front surface 11 a (or rear surface 11 b ). In this way, by focusing the laser beam 17 having a wavelength penetrating to the workpiece 11 inside the workpiece 11, the workpiece 11 can be absorbed by multiphoton absorption at the condensing point and its vicinity. A part of the modified layer 19 (modified layer 19a, etc.) that becomes the starting point of division is formed.

在本實施形態的第1雷射加工步驟中，由於是將雷射光束17沿著對象的分割預定線13且僅在晶片區域11c內照射，因此可沿著對象的分割預定線13而僅在晶片區域11c內形成改質層19。亦即，如圖5(B)所示，在第1雷射加工步驟中，不會在外周剩餘區域11d形成改質層19。In the first laser processing step of the present embodiment, since the laser beam 17 is irradiated only within the wafer region 11c along the planned dividing line 13 of the object, it is possible to Modified layer 19 is formed in wafer region 11c. That is, as shown in FIG. 5(B), in the first laser processing step, the modified layer 19 is not formed in the peripheral remaining region 11d.

在沿著對象的分割預定線13於規定的深度位置形成改質層19之後，以同樣的工序來沿著對象的分割預定線13於其他之深度位置形成改質層19。如圖5(B)所示，在本實施形態中，是在例如被加工物11之離正面11a(或背面11b)的深度不同的3個位置上形成改質層19(改質層19a、改質層19b、改質層19c)。After the modified layer 19 is formed at a predetermined depth position along the intended division line 13 of the target, the modified layer 19 is formed at other depth positions along the planned division line 13 of the target in the same process. As shown in FIG. 5(B), in this embodiment, the modified layer 19 (modified layer 19a, modified layer 19a, modified layer 19b, modified layer 19c).

其中，對沿著1條分割預定線13所形成的改質層19的數量或位置並無特別的限制。亦可為例如將沿著1條分割預定線13所形成的改質層19的數量設成1個。又，較理想的是，將此改質層19以讓裂隙到達正面11a(或者背面11b)的條件來形成。當然，以讓裂隙到達正面11a及背面11b之雙面的條件來形成改質層19亦可。藉此，變得可以更適當地對被加工物11進行分割。However, there is no particular limitation on the number or position of the modified layer 19 formed along one planned dividing line 13 . For example, the number of modified layers 19 formed along one planned dividing line 13 may be set to one. Furthermore, it is preferable to form the reforming layer 19 under the condition that the cracks reach the front surface 11a (or the rear surface 11b). Of course, the modifying layer 19 may be formed under the condition that the cracks reach both sides of the front surface 11a and the back surface 11b. Thereby, it becomes possible to divide the workpiece 11 more appropriately.

在沿著對象的分割預定線13形成所需要的數量的改質層19之後，是重複上述之工序，而沿著其他的全部的分割預定線13來形成改質層19。如圖5(A)所示，當沿著全部的分割預定線13形成所需要的數量的改質層19時，第1雷射加工步驟即結束。After forming a required number of modified layers 19 along the intended division line 13 of the target, the above-mentioned steps are repeated to form modified layers 19 along all the other planned division lines 13 . As shown in FIG. 5(A), when the required number of modified layers 19 are formed along all the planned dividing lines 13, the first laser processing step is completed.

再者，在此第1雷射加工步驟中，雖然是在沿著一條割預定線13形成所需要的數量的改質層19後，沿著其他的分割預定線13形成同樣的改質層19，但形成改質層19的順序等並無特別的限制。亦可為例如，在全部的分割預定線13的相同深度的位置上形成改質層19後，在其他的深度位置形成改質層19。Furthermore, in this first laser processing step, after forming the required number of modified layers 19 along one planned dividing line 13, the same modified layers 19 are formed along the other planned dividing lines 13. , but the order of forming the modified layer 19 is not particularly limited. For example, the modified layer 19 may be formed at a different depth position after forming the modified layer 19 at the same depth position of all the planned division lines 13 .

在被加工物11為矽晶圓的情況下，是例如以如下的條件來形成改質層19。 被加工物：矽晶圓 雷射光束的波長：1340nm 雷射光束的重複頻率：90kHz 雷射光束的輸出：0.1W~2W 工作夾台的移動速度(加工進給速度)：180mm/秒~1000mm/秒，代表性的是500mm/秒When the workpiece 11 is a silicon wafer, the modified layer 19 is formed, for example, under the following conditions. Processed object: silicon wafer Laser beam wavelength: 1340nm Laser beam repetition rate: 90kHz Laser beam output: 0.1W~2W The moving speed of the work clamp table (processing feed speed): 180mm/sec~1000mm/sec, typically 500mm/sec

在被加工物11為砷化鎵基板或磷化銦基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：砷化鎵基板、磷化銦基板 雷射光束的波長：1064nm 雷射光束的重複頻率：20kHz 雷射光束的輸出：0.1W~2W 工作夾台的移動速度(加工進給速度)：100mm/秒~400mm/秒，代表性的是200mm/秒When the workpiece 11 is a gallium arsenide substrate or an indium phosphide substrate, the modified layer 19 is formed, for example, under the following conditions. Processed objects: gallium arsenide substrates, indium phosphide substrates Laser beam wavelength: 1064nm Repetition frequency of laser beam: 20kHz Laser beam output: 0.1W~2W Moving speed of work clamp table (processing feed speed): 100mm/sec~400mm/sec, typically 200mm/sec

在被加工物11為藍寶石基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：藍寶石基板 雷射光束的波長：1045nm 雷射光束的重複頻率：100kHz 雷射光束的輸出：0.1W~2W 工作夾台的移動速度(加工進給速度)：400mm/秒~800mm/秒，代表性的是500mm/秒When the workpiece 11 is a sapphire substrate, the modified layer 19 is formed, for example, under the following conditions. Processed object: sapphire substrate Laser beam wavelength: 1045nm Laser beam repetition rate: 100kHz Laser beam output: 0.1W~2W The moving speed of the work clamp table (processing feed speed): 400mm/sec~800mm/sec, typically 500mm/sec

在被加工物11為以鉭酸鋰、或鈮酸鋰等之鐵電體所形成的鐵電體基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：鉭酸鋰基板、鈮酸鋰基板 雷射光束的波長：532nm 雷射光束的重複頻率：15kHz 雷射光束的輸出：0.02W~0.2W 工作夾台的移動速度(加工進給速度)：270mm/秒~420mm/秒，代表性的是300mm/秒When the workpiece 11 is a ferroelectric substrate formed of a ferroelectric such as lithium tantalate or lithium niobate, the modified layer 19 is formed, for example, under the following conditions. Processed objects: lithium tantalate substrate, lithium niobate substrate Laser beam wavelength: 532nm Laser beam repetition rate: 15kHz Laser beam output: 0.02W~0.2W Moving speed of work clamp table (processing feed speed): 270mm/sec~420mm/sec, typically 300mm/sec

在被加工物11為以鈉玻璃或硼矽玻璃、石英玻璃等所形成的玻璃基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：鈉玻璃基板、硼矽玻璃基板、石英玻璃基板 雷射光束的波長：532nm 雷射光束的重複頻率：50kHz 雷射光束的輸出：0.1W~2W 工作夾台的移動速度(加工進給速度)：300mm/秒~600mm/秒，代表性的是400mm/秒When the workpiece 11 is a glass substrate formed of soda glass, borosilicate glass, quartz glass, or the like, the modified layer 19 is formed, for example, under the following conditions. Processed objects: Sodium glass substrates, borosilicate glass substrates, quartz glass substrates Laser beam wavelength: 532nm Repetition frequency of laser beam: 50kHz Laser beam output: 0.1W~2W Moving speed of work clamp (processing feed speed): 300mm/sec~600mm/sec, typically 400mm/sec

在被加工物11為氮化鎵基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：氮化鎵基板 雷射光束的波長：532nm 雷射光束的重複頻率：25kHz 雷射光束的輸出：0.02W~0.2W 工作夾台的移動速度(加工進給速度)：90mm/秒~600mm/秒，代表性的是150mm/秒When the workpiece 11 is a gallium nitride substrate, the modified layer 19 is formed, for example, under the following conditions. Processed object: GaN substrate Laser beam wavelength: 532nm Repetition frequency of laser beam: 25kHz Laser beam output: 0.02W~0.2W The moving speed of the work clamp table (processing feed speed): 90mm/sec~600mm/sec, typically 150mm/sec

在被加工物11為碳化矽基板的情況下，是例如以如下的條件來形成改質層19。 被加工物：碳化矽基板 雷射光束的波長：532nm 雷射光束的重複頻率：25kHz 雷射光束的輸出：0.02W~0.2W，代表性的是0.1W 工作夾台的移動速度(加工進給速度)：90mm/秒~600mm/秒，代表性的是，在碳化矽基板的解理方向上為90mm/秒，在非解理方向上為400mm/秒When the workpiece 11 is a silicon carbide substrate, the modified layer 19 is formed, for example, under the following conditions. Processed object: silicon carbide substrate Laser beam wavelength: 532nm Repetition frequency of laser beam: 25kHz Laser beam output: 0.02W~0.2W, typically 0.1W The moving speed of the work clamp (processing feed rate): 90mm/sec~600mm/sec, typically 90mm/sec in the cleavage direction of the silicon carbide substrate and 400mm/sec in the non-cleavage direction

在本實施形態的第1雷射加工步驟中，由於是沿著分割預定線13而僅在晶片區域11c內形成改質層19(改質層19a、19b、及19c)，在外周剩餘區域11d並未形成改質層19，因此可藉由此外周剩餘區域11d來保持被加工物11的強度。藉此，不會有因為在搬送等之時所施加之力而導致被加工物11被分割成一個個的晶片之情形。如此，第1雷射加工步驟之後的外周剩餘區域11d是作為補強部而發揮功能，前述補強部是用於補強晶片區域11c。In the first laser processing step of this embodiment, since the modified layer 19 (modified layers 19a, 19b, and 19c) is formed only in the wafer region 11c along the planned dividing line 13, the remaining region 11d on the outer periphery is The modified layer 19 is not formed, so the strength of the workpiece 11 can be maintained by the remaining peripheral region 11d. Thereby, there is no possibility that the workpiece 11 is divided into individual wafers due to the force applied at the time of conveyance or the like. In this manner, the remaining outer peripheral region 11d after the first laser processing step functions as a reinforcing portion for reinforcing the wafer region 11c.

又，在本實施形態的第1雷射加工步驟中，由於在外周剩餘區域11d未形成改質層19，因此即使是在例如從改質層19伸長的裂隙到達正面11a及背面11b之雙方，而已將被加工物11完全地分割的狀況下，也不會使各晶片脫落、分散。一般而言，當在被加工物11形成改質層19時，被加工物11會在該改質層19的附近膨脹。在本實施形態中，是以作為補強部而發揮功能的環狀的外周剩餘區域11d讓藉由改質層19的形成而產生的膨脹之力向內作用，藉此可壓制各晶片，而防止其脫落、分散。In addition, in the first laser processing step of the present embodiment, since the modified layer 19 is not formed in the remaining peripheral region 11d, even if a crack elongated from the modified layer 19 reaches both the front surface 11a and the rear surface 11b, Even when the workpiece 11 is completely divided, the wafers do not come off or disperse. Generally, when the modified layer 19 is formed on the workpiece 11 , the workpiece 11 expands near the modified layer 19 . In the present embodiment, the ring-shaped remaining peripheral region 11d functioning as a reinforcing part allows the force of expansion generated by the formation of the modified layer 19 to act inward, thereby pressing each wafer and preventing It falls off and disperses.

在上述第1雷射加工步驟之後是進行第2雷射加工步驟。在此第2雷射加工步驟中，首先，是使工作夾台6移動，而將雷射照射單元40的位置於晶片區域11c與外周剩餘區域11d的交界線上對準。然後，如圖4所示，一邊從雷射照射單元40照射對被加工物11具有穿透性之波長的雷射光束17，一邊使工作夾台6旋轉。亦即，在本實施形態中，是從配置於被加工物11的上方之雷射照射單元40，朝向被加工物11的正面11a照射雷射光束17。After the above-mentioned first laser processing step, the second laser processing step is performed. In this second laser processing step, first, the work chuck 6 is moved to align the position of the laser irradiation unit 40 on the boundary line between the wafer region 11c and the remaining peripheral region 11d. Then, as shown in FIG. 4 , the work chuck 6 is rotated while the laser beam 17 having a wavelength penetrating the workpiece 11 is irradiated from the laser irradiation unit 40 . That is, in this embodiment, the laser beam 17 is irradiated toward the front surface 11 a of the workpiece 11 from the laser irradiation unit 40 arranged above the workpiece 11 .

此雷射光束17是以將聚光點定位在被加工物11的內部之離正面11a(或背面11b)規定的深度的位置之方式來進行照射。如此，可以藉由使對被加工物11具有穿透性之波長的雷射光束17聚光在被加工物11的內部，以在聚光點及其附近藉由多光子吸收將被加工物11的一部分改質，而形成成為分割之起點的改質層19(改質層19d)。This laser beam 17 is irradiated so that the focal point is positioned at a position within the workpiece 11 at a predetermined depth from the front surface 11 a (or rear surface 11 b ). In this way, by focusing the laser beam 17 having a wavelength penetrating to the workpiece 11 inside the workpiece 11, the workpiece 11 can be absorbed by multiphoton absorption at the condensing point and its vicinity. A part of the modified layer 19 (modified layer 19d) which is the starting point of division is formed.

在本實施形態的第2雷射加工步驟中，由於是將雷射光束17沿著晶片區域11c與外周剩餘區域11d的交界來照射，因此可沿著此交界來形成改質層19。再者，對沿著晶片區域11c與外周剩餘區域11d的交界所形成的改質層19的數量或位置並無特別的限制。亦可為例如將沿著交界所形成的改質層19的數量設為2個以上。In the second laser processing step of this embodiment, since the laser beam 17 is irradiated along the boundary between the wafer region 11c and the remaining peripheral region 11d, the modified layer 19 can be formed along the boundary. Furthermore, there is no particular limitation on the number or position of the modified layer 19 formed along the boundary between the wafer region 11c and the peripheral remaining region 11d. For example, the number of modified layers 19 formed along the boundary may be two or more.

又，較理想的是，將沿著此交界的改質層19以讓裂隙到達正面11a(或背面11b)的條件來形成。當然，以讓裂隙到達正面11a及背面11b之雙面的條件來形成沿著交界的改質層19亦可。藉此，變得可將被加工物11更適當地分割，而可以將外周剩餘區域11d從晶片區域11c分離。Furthermore, it is desirable to form the modified layer 19 along this boundary under the condition that the cracks reach the front surface 11a (or the rear surface 11b). Of course, it is also possible to form the modified layer 19 along the boundary under the condition that the cracks reach both sides of the front surface 11a and the rear surface 11b. Thereby, the workpiece 11 can be divided more appropriately, and the peripheral remaining region 11d can be separated from the wafer region 11c.

對於用於在第2雷射加工步驟中形成改質層19的具體的條件等並無特別的限制。例如，可以用與用於在第1雷射加工步驟中形成改質層19的條件相同的條件，來形成沿著交界的改質層19。當然，亦可用與用於在第1雷射加工步驟中形成改質層19的條件不同的條件，來形成沿著交界的改質層19。Specific conditions and the like for forming modified layer 19 in the second laser processing step are not particularly limited. For example, the modified layer 19 along the boundary can be formed under the same conditions as those used to form the modified layer 19 in the first laser processing step. Of course, the modified layer 19 along the boundary may be formed under conditions different from the conditions used to form the modified layer 19 in the first laser processing step.

如圖5(A)及圖5(B)所示，當形成沿著晶片區域11c與外周剩餘區域11d的交界的環狀改質層19(改質層19d)時，第2雷射加工步驟即結束。再者，在本實施形態中，是與在第1雷射加工步驟中所形成的改質層19(改質層19b)相同程度的深度位置上形成有改質層19(改質層19d)，並且使裂隙從此改質層19(改質層19d)到達正面11a及背面11b。As shown in FIG. 5(A) and FIG. 5(B), when forming the annular modified layer 19 (modified layer 19d) along the boundary between the wafer region 11c and the peripheral remaining region 11d, the second laser processing step That's the end. In addition, in the present embodiment, the modified layer 19 (modified layer 19d) is formed at the same depth position as the modified layer 19 (modified layer 19b) formed in the first laser processing step. , and make the cracks reach the front surface 11a and the back surface 11b from the modified layer 19 (modified layer 19d).

於第1雷射加工步驟及第2雷射加工步驟之後，是進行將被加工物11從工作夾台6搬出之搬出步驟。具體而言，是例如以可以吸附、保持被加工物11的正面11a(或者背面11b)之整體的搬送單元(未圖示)來吸附被加工物11的正面11a之整體後，關閉閥32以遮斷吸引源34的負壓，而將被加工物11搬出。再者，在本實施形態中，如上述，由於外周剩餘區域11d是作為補強部而發揮功能，因此不會有下述情形：因為在搬送等之時所施加之力而導致被加工物11被分割成一個個的晶片，因而變得無法適當地搬送被加工物11。After the first laser processing step and the second laser processing step, an unloading step of unloading the workpiece 11 from the work chuck 6 is performed. Specifically, for example, after the entire front surface 11a (or back surface 11b) of the workpiece 11 is sucked by a transfer unit (not shown) capable of sucking and holding the whole front surface 11a (or back surface 11b) of the workpiece 11, the valve 32 is closed to The negative pressure of the suction source 34 is shut off, and the workpiece 11 is carried out. Furthermore, in this embodiment, since the remaining outer peripheral region 11d functions as a reinforcing portion as described above, there is no possibility that the workpiece 11 will be crushed due to a force applied during transportation or the like. Since the wafers are divided into individual wafers, it becomes impossible to properly transport the workpiece 11 .

在搬出步驟後是進行從被加工物11去除補強部的補強部去除步驟。圖6是用於針對補強部去除步驟進行說明的截面圖。再者，在圖6中是以功能方塊表示一部分的構成要件。補強部去除步驟是使用例如圖6所示的分割裝置52來進行。The reinforcement part removal process which removes a reinforcement part from the to-be-processed object 11 is performed after a carrying out process. FIG. 6 is a cross-sectional view for explaining a reinforcing portion removal step. In addition, in FIG. 6, some structural elements are shown by a functional block. The reinforcing portion removing step is performed using, for example, the dividing device 52 shown in FIG. 6 .

分割裝置52具備有用於吸引、保持被加工物11的工作夾台(保持工作台)54。此工作夾台54之上表面的一部分是成為吸引、保持被加工物11的晶片區域11c的保持面54a。保持面54a是透過形成在工作夾台54之內部的吸引路54b或閥56等而連接到吸引源58。The dividing device 52 includes a jig (holding table) 54 for sucking and holding the workpiece 11 . A part of the upper surface of the chuck table 54 is a holding surface 54 a that attracts and holds the wafer region 11 c of the workpiece 11 . The holding surface 54 a is connected to a suction source 58 through a suction path 54 b formed inside the chuck 54 , a valve 56 , and the like.

此工作夾台54是連結於馬達等的旋轉驅動源(未圖示)，且繞著與鉛直方向大致平行的旋轉軸旋轉。又，工作夾台54是被移動機構(未圖示)所支撐，且在相對於上述之保持面54a大致平行的方向上移動。This chuck table 54 is connected to a rotational drive source (not shown) such as a motor, and rotates around a rotational axis substantially parallel to the vertical direction. In addition, the work chuck 54 is supported by a moving mechanism (not shown), and moves in a direction substantially parallel to the above-mentioned holding surface 54a.

在補強部去除步驟中，首先是使被加工物11的背面11b接觸於工作夾台54的保持面54a。然後，打開閥56，使吸引源58的負壓作用在保持面54a。藉此，被加工物11會在正面11a側露出於上方的狀態下被吸引、保持在工作夾台54上。再者，在本實施形態中，是如圖6所示地以工作夾台54直接保持被加工物11的背面11b側。亦即，在此也是不需要對被加工物11黏貼擴展片。In the reinforcing portion removing step, first, the back surface 11 b of the workpiece 11 is brought into contact with the holding surface 54 a of the work chuck 54 . Then, the valve 56 is opened, and the negative pressure of the suction source 58 is applied to the holding surface 54a. Thereby, the workpiece 11 is sucked and held on the work chuck 54 with the front surface 11 a side exposed upward. In addition, in this embodiment, as shown in FIG. 6, the back surface 11b side of the workpiece 11 is directly held by the work chuck 54. As shown in FIG. That is, here too, it is not necessary to stick the expansion sheet to the workpiece 11 .

接著，使相對於外周剩餘區域11d向上的力(從保持面54a遠離的方向的力)作用。如上述，可在晶片區域11c與外周剩餘區域11d的交界，形成有成為分割的起點的改質層19(改質層19d)。因此，可以藉由使相對於外周剩餘區域11d向上的力作用，而如圖6所示，將外周剩餘區域11d從工作夾台54舉起而去除。藉此，在工作夾台54上僅留下被加工物11的晶片區域11c。Next, an upward force (a force in a direction away from the holding surface 54 a ) is applied to the remaining outer peripheral region 11 d. As described above, the modified layer 19 (modified layer 19d ), which is the starting point of division, may be formed at the boundary between the wafer region 11c and the remaining outer peripheral region 11d. Therefore, as shown in FIG. 6 , the remaining outer peripheral region 11 d can be removed from the work chuck 54 by applying an upward force to the remaining outer peripheral region 11 d. Thereby, only the wafer region 11 c of the workpiece 11 remains on the chuck table 54 .

在補強部去除步驟之後是進行將被加工物11分割成一個個的晶片的分割步驟。具體而言，是例如在被加工物11的內部(正面11a與背面11b之間)形成較大的溫差，而藉由熱衝擊(熱震，thermal shock)來賦與力而對被加工物11進行分割。圖7是用於針對分割步驟進行說明的截面圖。再者，在圖7中是以功能方塊表示一部分的構成要件。After the reinforcing portion removing step, a dividing step of dividing the workpiece 11 into individual wafers is performed. Specifically, for example, a large temperature difference is formed inside the workpiece 11 (between the front surface 11a and the rear surface 11b), and a force is applied to the workpiece 11 by thermal shock (thermal shock). to split. FIG. 7 is a cross-sectional view for explaining the dividing step. In addition, in FIG. 7, some structural elements are shown by a functional block.

分割步驟是繼續使用分割裝置52來進行。如圖7所示，分割裝置52更具備有配置於工作夾台54的上方的噴射噴嘴(溫度差形成單元)60。在本實施形態的分割步驟中，是藉由從此噴射噴嘴60對被加工物11的正面11a噴附冷卻用的流體21，來形成在熱衝擊的產生上所需要的溫度差。其中，亦可藉由噴附加熱用的流體21，來形成在熱衝擊的產生上所需要的溫度差。The segmentation step is continued using the segmentation device 52 . As shown in FIG. 7 , the dividing device 52 further includes a spray nozzle (temperature difference forming unit) 60 arranged above the chuck table 54 . In the dividing step of the present embodiment, the temperature difference required for generation of thermal shock is formed by spraying the cooling fluid 21 on the front surface 11a of the workpiece 11 from the spray nozzle 60 . Among them, the temperature difference required for the generation of thermal shock can also be formed by spraying the fluid 21 for additional heat.

作為冷卻用的流體21，宜使用例如可以藉由汽化而進一步奪取熱之液態氮等的低溫的液體。藉此，可將被加工物11的正面11a側很快地冷卻，而變得易於形成所需要的溫度差。在此，所需要的溫度差是指為了沿著改質層19(改質層19a、19b、及19c)讓被加工物11斷裂，而可獲得超過所需要的應力的熱衝擊之溫度差。此溫度差是因應於例如被加工物11的材質或厚度、改質層19(改質層19a、19b、及19c)的狀態等而決定。As the fluid 21 for cooling, for example, a low-temperature liquid such as liquid nitrogen that can further rob heat by vaporization is preferably used. Thereby, the front surface 11a side of the workpiece 11 can be cooled quickly, and a required temperature difference can be easily formed. Here, the required temperature difference refers to a temperature difference that can obtain a thermal shock exceeding the required stress in order to fracture the workpiece 11 along the modified layer 19 (modified layers 19a, 19b, and 19c). This temperature difference is determined according to, for example, the material or thickness of the workpiece 11, the state of the modified layer 19 (modified layers 19a, 19b, and 19c), and the like.

其中，對流體21的種類或流量等並無特別的限制。亦可使用例如已充份地冷卻之空氣等的氣體、或水等的液體。再者，在利用液體來作為流體21之情況下，較佳的是將此液體預先冷卻至未凍結之程度的較低溫度(例如，比凝固點高0.1℃~10℃左右之溫度)。However, there is no particular limitation on the type or flow rate of the fluid 21 . Gases such as sufficiently cooled air or liquids such as water may also be used. Furthermore, in the case of using a liquid as the fluid 21, it is preferable to pre-cool the liquid to a relatively low temperature (for example, a temperature about 0.1° C. to 10° C. higher than the freezing point) so as not to freeze.

當冷卻被加工物11以形成充份的溫度差時，可藉由熱衝擊使裂隙23從改質層19(改質層19a、19b、及19c)伸長，而將被加工物11沿著分割預定線13分割成複數個晶片25。如此，在本實施形態中，可以藉由一次的冷卻來賦與所需要之力，而將被加工物11分割成一個個的晶片25。再者，在本實施形態中，雖然是藉由將被加工物11急速地冷卻來產生熱衝擊，但亦可藉由將被加工物11急速地加熱來產生熱衝擊。When the processed object 11 is cooled to form a sufficient temperature difference, the cracks 23 can be elongated from the modified layer 19 (modified layers 19a, 19b, and 19c) by thermal shock, and the processed object 11 can be divided along the The predetermined line 13 is divided into a plurality of wafers 25 . In this way, in this embodiment, the workpiece 11 can be divided into individual wafers 25 by imparting a required force by cooling once. In addition, in the present embodiment, although the thermal shock is generated by rapidly cooling the workpiece 11, the thermal shock may be generated by rapidly heating the workpiece 11.

如以上所述，本實施形態之晶片的製造方法中，由於是在以工作夾台(保持工作台)6直接保持被加工物(工件)11的狀態下，僅對被加工物11的晶片區域11c照射雷射光束17，來形成沿著分割預定線13的改質層19(改質層19a、19b、及19c)，並對晶片區域11c與外周剩餘區域11d的交界照射雷射光束17，來形成沿著交界的改質層19(改質層19d)後，藉由一次的冷卻來賦與力，以將被加工物11分割成一個個的晶片25，因此毋須為了對被加工物11施加力來分割成一個個的晶片25而使用擴展片。如此，根據本實施形態之晶片的製造方法，可以在不使用擴展片的情形下對板狀的被加工物11即矽晶圓進行分割，來製造複數個晶片25。As described above, in the wafer manufacturing method of this embodiment, since the workpiece (workpiece) 11 is directly held by the work chuck (holding table) 6, only the wafer region of the workpiece 11 11c irradiates the laser beam 17 to form the modified layer 19 (modified layers 19a, 19b, and 19c) along the dividing line 13, and irradiates the boundary of the wafer region 11c and the peripheral remaining region 11d with the laser beam 17, After forming the modified layer 19 (modified layer 19d) along the boundary, the force is given by one cooling to divide the workpiece 11 into individual wafers 25, so there is no need to process the workpiece 11 Spreading sheets are used to apply force to separate the individual wafers 25 . In this way, according to the wafer manufacturing method of this embodiment, the silicon wafer which is the plate-like workpiece 11 can be divided without using the expansion sheet, and a plurality of wafers 25 can be manufactured.

又，在本實施形態之晶片的製造方法中，由於僅對被加工物11的晶片區域11c照射雷射光束17來形成沿著分割預定線13的改質層19(改質層19a、19b、及19c)，並且將外周剩餘區域11d設為未形成有改質層19(改質層19a、19b、及19c)的補強部，因此可藉由此補強部將晶片區域11c補強。據此，也不會有因在搬送等之時所施加之力導致被加工物11被分割成一個個的晶片25，而變得無法適當地搬送被加工物11之情形。In addition, in the wafer manufacturing method of this embodiment, the modified layer 19 (modified layers 19a, 19b, and 19c), and the remaining outer peripheral region 11d is used as a reinforcing part where the modified layer 19 (modified layers 19a, 19b, and 19c) is not formed, so the wafer region 11c can be reinforced by this reinforcing part. Accordingly, the workpiece 11 is not divided into individual wafers 25 due to the force applied at the time of conveyance, so that the workpiece 11 cannot be properly conveyed.

再者，本發明並不因上述實施形態等之記載而受到限制，並可作各種變更而實施。例如，在上述實施形態中，雖然是在第1雷射加工步驟之後進行第2雷射加工步驟，但亦可在第2雷射加工步驟之後進行第1雷射加工步驟。又，也可以在第1雷射加工步驟的途中進行第2雷射加工步驟。In addition, this invention is not limited by description of the said embodiment etc., It can change variously and can implement. For example, in the above embodiment, although the second laser processing step is performed after the first laser processing step, the first laser processing step may be performed after the second laser processing step. Moreover, you may perform a 2nd laser processing process in the middle of a 1st laser processing process.

又，在上述實施形態中，雖然是以工作夾台6直接保持被加工物11的背面11b側，並從正面11a側照射雷射光束17，但亦可為以工作夾台6直接保持被加工物11的正面11a側，並從背面11b側來照射雷射光束17。In addition, in the above-mentioned embodiment, although the back surface 11b side of the workpiece 11 is directly held by the work chuck 6, and the laser beam 17 is irradiated from the front 11a side, it is also possible to directly hold the workpiece 11 by the work chuck 6. The laser beam 17 is irradiated from the front 11a side of the object 11 and from the back 11b side.

圖8是用於說明關於變形例的保持步驟的截面圖。在此變形例的保持步驟中，亦可如圖8所示，使用例如藉由以聚乙烯或環氧等之樹脂為代表的柔軟的材料所形成的多孔質狀的片材(多孔片材)44來構成上表面的工作夾台(保持工作台)6。FIG. 8 is a cross-sectional view for explaining a holding step in a modified example. In the holding step of this modified example, as shown in FIG. 8, for example, a porous sheet (porous sheet) formed of a soft material represented by resin such as polyethylene or epoxy may be used. 44 to form the upper surface of the work clamp (holding table) 6.

在此工作夾台6上，是形成為以片材44的上表面44a來吸引、保持被加工物11的正面11a側。藉此，可以防止形成於正面11a側的器件等的破損。此片材44是工作夾台6的一部分，且可與工作夾台6的本體等一起重複被使用。The work chuck 6 is formed so that the front surface 11 a side of the workpiece 11 is sucked and held by the upper surface 44 a of the sheet 44 . Thereby, damage to devices and the like formed on the front surface 11 a side can be prevented. This sheet 44 is a part of the work holder 6 and can be used repeatedly together with the main body of the work holder 6 and the like.

其中，工作夾台6的上表面並非必須要藉由上述之多孔質狀的片材44來構成，只要是以至少對形成於被加工物11之正面11a側的器件等不造成損傷的程度的柔軟材料來構成即可。又，較理想的是，片材44是構成為可以相對於工作夾台6之本體裝卸，且可以在已破損的情況等之下進行更換。Here, the upper surface of the work holder 6 does not necessarily have to be constituted by the above-mentioned porous sheet 44, as long as it does not cause damage to at least the devices and the like formed on the front 11a side of the workpiece 11. It can be composed of soft materials. Furthermore, it is preferable that the sheet 44 is detachably attached to and detached from the main body of the work chuck 6, and can be replaced in the case of damage or the like.

又，在上述實施形態中，雖然是在搬出步驟之後且在分割步驟前進行補強部去除步驟，但亦可例如在第1雷射加工步驟及第2雷射加工步驟之後且在搬出步驟之前進行補強部去除步驟。再者，在搬出步驟之後且在分割步驟之前進行補強部去除步驟的情況下，由於毋須在補強部去除步驟後搬送被加工物11，因此易於避免變得無法適當地搬送被加工物11等的不良狀況。In addition, in the above-mentioned embodiment, although the reinforcement portion removal step is performed after the carrying out step and before the dividing step, it may be performed, for example, after the first laser processing step and the second laser processing step and before the carrying out step. Reinforcement part removal procedure. Furthermore, when the reinforcing part removing step is performed after the unloading step and before the dividing step, since the workpiece 11 does not need to be conveyed after the reinforcing part removing step, it is easy to avoid the situation that the workpiece 11 cannot be properly conveyed. bad condition.

同樣地，也可以在分割步驟之後進行補強部去除步驟。在此情況下，由於可藉由在分割步驟中所賦與的熱衝撃，而更確實地分割晶片區域11c與外周剩餘區域11d，因此變得在之後的補強部去除步驟中可以更容易地去除補強部。Similarly, the reinforcing portion removing step may be performed after the dividing step. In this case, since the wafer region 11c and the remaining peripheral region 11d can be more reliably divided by the thermal shock applied in the dividing step, it becomes easier to remove the reinforcing part in the subsequent step of removing the reinforcing part. Reinforcement department.

又，也可以省略補強部去除步驟。在此情況下，例如宜在第1雷射加工步驟及第2雷射加工步驟中調整形成改質層19的範圍，以使補強部的寬度成為從被加工物11的外周緣起2mm~3mm左右。又，亦可例如在分割步驟中對晶片區域11c進行分割前，在補強部形成成為分割之起點的溝。Also, the step of removing the reinforcing portion may be omitted. In this case, for example, in the first laser processing step and the second laser processing step, it is preferable to adjust the range where the modified layer 19 is formed so that the width of the reinforcing part is about 2 mm to 3 mm from the outer peripheral edge of the workpiece 11. . Also, for example, before dividing the wafer region 11c in the dividing step, a groove to be a starting point of dividing may be formed in the reinforcing portion.

圖9(A)是用於針對變形例之分割步驟進行說明的截面圖，圖9(B)是示意地顯示在變形例之分割步驟中對晶片區域11c進行分割前的被加工物的狀態的平面圖。在變形例之分割步驟中，在藉由分割裝置52將被加工物11分割成一個個的晶片前，可例如使用設置於分割裝置52之切割單元62並在補強部形成成為分割之起點的溝。9(A) is a cross-sectional view for explaining the division step of the modified example, and FIG. 9(B) schematically shows the state of the workpiece before dividing the wafer region 11c in the divided step of the modified example. floor plan. In the division step of the modified example, before the workpiece 11 is divided into individual wafers by the division device 52, for example, the dicing unit 62 provided in the division device 52 may be used to form a groove as the starting point of division in the reinforcing part. .

切割單元62具備有主軸(未圖示)，前述主軸是成為相對於保持面54a大致平行的旋轉軸。在主軸的一端側裝設有環狀的切割刀片64，前述環狀的切割刀片64是將磨粒分散於結合材而構成。在主軸的另一端側，連結有馬達等的旋轉驅動源(未圖示)，且裝設在主軸的一端側的切割刀片64，是藉由從此旋轉驅動源所傳來的力而旋轉。切割單元62是例如被升降機構(未圖示)所支撐，且切割刀片64是藉由此升降機構而在鉛直方向上移動。The cutting unit 62 is provided with a main shaft (not shown) which is a rotation axis substantially parallel to the holding surface 54a. An annular cutter blade 64 is attached to one end side of the main shaft, and the annular cutter blade 64 is formed by dispersing abrasive grains in a binder. A rotational drive source (not shown) such as a motor is connected to the other end of the main shaft, and the cutting blade 64 mounted on one end of the main shaft is rotated by force transmitted from the rotational drive source. The cutting unit 62 is supported by, for example, an elevating mechanism (not shown), and the cutting blade 64 is moved in the vertical direction by the elevating mechanism.

如圖9(A)及圖9(B)所示，形成成為分割之起點的溝時，是例如使上述之切割刀片64旋轉並切入外周剩餘區域11d(亦即，補強部)。藉此，可在補強部形成成為分割之起點的溝11e。再者，較理想的是將此溝11e例如沿著分割預定線13來形成。藉由形成這種溝11e，變得可以將被加工物11的晶片區域11c連同外周剩餘區域11d一起分割。As shown in FIG. 9(A) and FIG. 9(B), when forming the groove to be the starting point of division, for example, the above-mentioned cutting blade 64 is rotated to cut into the remaining outer peripheral region 11d (that is, the reinforcing portion). Thereby, the groove 11e which becomes the starting point of division|segmentation can be formed in a reinforcement part. It should be noted that the groove 11 e is preferably formed along, for example, the planned dividing line 13 . By forming such grooves 11e, it becomes possible to divide the wafer region 11c of the workpiece 11 together with the peripheral remaining region 11d.

其他，上述實施形態及變化例之構造、方法等，只要不脫離本發明之目的的範圍，皆可適當變更而實施。In addition, the structures, methods, and the like of the above-mentioned embodiments and modified examples can be appropriately changed and implemented as long as they do not depart from the scope of the purpose of the present invention.

2‧‧‧雷射加工裝置 4‧‧‧基台 6、54‧‧‧工作夾台(保持工作台) 6a、54a‧‧‧保持面 6b、54b‧‧‧吸引路 8‧‧‧水平移動機構 10‧‧‧X軸導軌 11‧‧‧被加工物(工件) 11a‧‧‧正面 11b‧‧‧背面 11c‧‧‧晶片區域 11d‧‧‧外周剩餘區域 12‧‧‧X軸移動工作台 13‧‧‧分割預定線(切割道) 14‧‧‧X軸滾珠螺桿 15‧‧‧區域 16‧‧‧X軸脈衝馬達 17‧‧‧雷射光束 18‧‧‧X軸尺規 19、19a、19b、19c、19d‧‧‧改質層 20‧‧‧Y軸導軌 21‧‧‧流體 22‧‧‧Y軸移動工作台 23‧‧‧裂隙 24‧‧‧Y軸滾珠螺桿 25‧‧‧晶片 26‧‧‧Y軸脈衝馬達 28‧‧‧Y軸尺規 30‧‧‧支撐台 32、56‧‧‧閥 34、58‧‧‧吸引源 36‧‧‧支撐構造 38‧‧‧支撐臂 40‧‧‧雷射照射單元 42‧‧‧相機 44‧‧‧片材(多孔片材) 44a‧‧‧上表面 52‧‧‧分割裝置 60‧‧‧噴射噴嘴(溫度差形成單元) 62‧‧‧切割單元 64‧‧‧切割刀片2‧‧‧Laser processing device 4‧‧‧Abutment 6. 54‧‧‧Work clamping platform (holding workbench) 6a, 54a‧‧‧retaining surface 6b, 54b‧‧‧attraction road 8‧‧‧Horizontal movement mechanism 10‧‧‧X-axis guide rail 11‧‧‧Workpiece (workpiece) 11a‧‧‧Front 11b‧‧‧back side 11c‧‧‧chip area 11d‧‧‧outer peripheral remaining area 12‧‧‧X-axis mobile table 13‧‧‧Splitting scheduled line (cutting lane) 14‧‧‧X-axis ball screw 15‧‧‧Area 16‧‧‧X-axis pulse motor 17‧‧‧laser beam 18‧‧‧X-axis ruler 19, 19a, 19b, 19c, 19d‧‧‧modified layer 20‧‧‧Y-axis guide rail 21‧‧‧fluid 22‧‧‧Y-axis mobile table 23‧‧‧Crack 24‧‧‧Y-axis ball screw 25‧‧‧chip 26‧‧‧Y-axis pulse motor 28‧‧‧Y axis gauge 30‧‧‧support table 32, 56‧‧‧valve 34, 58‧‧‧attraction source 36‧‧‧Support structure 38‧‧‧support arm 40‧‧‧Laser irradiation unit 42‧‧‧Camera 44‧‧‧sheet (porous sheet) 44a‧‧‧upper surface 52‧‧‧Splitting device 60‧‧‧Jet nozzle (temperature difference forming unit) 62‧‧‧cutting unit 64‧‧‧Cutting blade

圖1是示意地顯示被加工物的構成例之立體圖。 圖2是示意地顯示雷射加工裝置的構成例之立體圖。 圖3(A)是用於針對保持步驟進行說明的截面圖，圖3(B)是用於針對第1雷射加工步驟進行說明的截面圖。 圖4是用於針對第2雷射加工步驟進行說明的截面圖。 圖5(A)是示意地顯示形成改質層後的被加工物的狀態的平面圖，圖5(B)是示意地顯示改質層的狀態的截面圖。 圖6是用於針對補強部去除步驟進行說明的截面圖。 圖7是用於針對分割步驟進行說明的截面圖。 圖8是用於針對變形例之保持步驟進行說明的截面圖。 圖9(A)是用於針對變形例之分割步驟進行說明的截面圖，圖9(B)是示意地顯示在變形例之分割步驟中對晶片區域進行分割前的被加工物的狀態的平面圖。FIG. 1 is a perspective view schematically showing a configuration example of a workpiece. Fig. 2 is a perspective view schematically showing a configuration example of a laser processing device. FIG. 3(A) is a cross-sectional view for explaining the holding step, and FIG. 3(B) is a cross-sectional view for explaining the first laser processing step. FIG. 4 is a cross-sectional view for explaining a second laser processing step. 5(A) is a plan view schematically showing the state of the workpiece after forming the modified layer, and FIG. 5(B) is a cross-sectional view schematically showing the state of the modified layer. FIG. 6 is a cross-sectional view for explaining a reinforcing portion removal step. FIG. 7 is a cross-sectional view for explaining the dividing step. Fig. 8 is a cross-sectional view for explaining a holding step of a modified example. 9(A) is a cross-sectional view for explaining the division step of the modified example, and FIG. 9(B) is a plan view schematically showing the state of the workpiece before dividing the wafer region in the divided step of the modified example. .

11‧‧‧被加工物(工件) 11‧‧‧Workpiece (workpiece)

11a‧‧‧正面 11a‧‧‧Front

11b‧‧‧背面 11b‧‧‧back side

11c‧‧‧晶片區域 11c‧‧‧chip area

21‧‧‧流體 21‧‧‧fluid

23‧‧‧裂隙 23‧‧‧Crack

25‧‧‧晶片 25‧‧‧chip

52‧‧‧分割裝置 52‧‧‧Splitting device

54‧‧‧工作夾台(保持工作台) 54‧‧‧Work clamping table (holding table)

54a‧‧‧保持面 54a‧‧‧Retaining surface

54b‧‧‧吸引路 54b‧‧‧Attraction Road

56‧‧‧閥 56‧‧‧valve

58‧‧‧吸引源 58‧‧‧Attraction source

60‧‧‧噴射噴嘴(溫度差形成單元) 60‧‧‧Jet nozzle (temperature difference forming unit)

Claims (3)

一種晶片的製造方法，是從板狀的被加工物來製造複數個晶片，前述被加工物具有藉由交叉的複數條分割預定線區劃出複數個成為該晶片的區域的晶片區域、及包圍該晶片區域的外周剩餘區域，前述晶片的製造方法之特徵在於：具備：保持步驟，以保持工作台直接保持被加工物；第1雷射加工步驟，在實施該保持步驟後，以將對被加工物具有穿透性之波長的雷射光束的聚光點定位在已保持於該保持工作台之被加工物的內部的方式，來將該雷射光束沿著該分割預定線僅對被加工物的該晶片區域照射，而沿著該晶片區域的該分割預定線形成第1改質層，並且將該外周剩餘區域設為未形成有該第1改質層的補強部；第2雷射加工步驟，在實施該保持步驟後，以將對被加工物具有穿透性之波長的雷射光束的聚光點定位在已保持於該保持工作台之被加工物的內部的方式，來將該雷射光束沿著該晶片區域與該外周剩餘區域的交界照射，而沿著該交界形成第2改質層；搬出步驟，在實施該第1雷射加工步驟及該第2雷射加工步驟後，從該保持工作台搬出被加工物；及分割步驟，在實施該搬出步驟後，對被加工物賦與力來將被加工物分割成一個個的該晶片，又，在該分割步驟中，是藉由一次的冷卻或加熱來賦 與該力，以將被加工物分割成一個個的該晶片。 A method of manufacturing a wafer, comprising manufacturing a plurality of wafers from a plate-shaped workpiece having a wafer region demarcated by a plurality of crossing dividing lines to form a plurality of wafer regions, and surrounding the wafer. In the remaining area of the periphery of the wafer area, the manufacturing method of the aforementioned wafer is characterized in that: it has: a holding step to directly hold the object to be processed by holding the workbench; The focusing point of the laser beam with a penetrating wavelength is positioned inside the workpiece that has been held on the holding table, so that the laser beam is only directed at the workpiece along the predetermined dividing line. The wafer area is irradiated, and the first modified layer is formed along the planned dividing line of the wafer area, and the remaining area of the outer periphery is used as a reinforcing part where the first modified layer is not formed; the second laser processing step, after carrying out the holding step, to position the focused point of the laser beam having a wavelength penetrating to the processed object inside the processed object held on the holding table. The laser beam is irradiated along the boundary between the wafer region and the remaining peripheral region, and a second modified layer is formed along the boundary; the carrying out step is performed after the first laser processing step and the second laser processing step , carrying out the workpiece from the holding table; and a dividing step, after carrying out the carrying out step, applying force to the workpiece to divide the workpiece into individual wafers, and in the dividing step, is given by one cooling or heating With this force, the workpiece is divided into wafers one by one. 如請求項1之晶片的製造方法，其中在該分割步驟中，是不將該補強部去除而藉由一次的冷卻或加熱來對被加工物賦予該力，以將被加工物分割成一個個的該晶片。 The wafer manufacturing method according to claim 1, wherein in the dividing step, the force is applied to the workpiece by one cooling or heating without removing the reinforcing portion, so that the workpiece is divided into individual pieces of the wafer. 如請求項1或2之晶片的製造方法，其中該保持工作台的上表面是藉由柔軟的材料所構成，在該保持步驟中，是以該柔軟的材料保持被加工物的正面側。 The wafer manufacturing method according to claim 1 or 2, wherein the upper surface of the holding table is made of a soft material, and in the holding step, the front side of the object to be processed is held with the soft material.
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