TWI785663B - Sensing module and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000003287 optical effect Effects 0.000 claims abstract description 68
- 239000003292 glue Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims description 47
- 239000000084 colloidal system Substances 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 9
- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- 239000012141 concentrate Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 3
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 3
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 claims description 3
- 229920006305 unsaturated polyester Polymers 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- -1 free radical compound Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- 150000001767 cationic compounds Chemical class 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- HWZWNRITCLAAPJ-UHFFFAOYSA-N 2-methyl-5-phenoxypent-2-enoic acid 2-phenoxyethyl 2-methylprop-2-enoate Chemical compound O(C1=CC=CC=C1)CCC=C(C(=O)O)C.C(C(=C)C)(=O)OCCOC1=CC=CC=C1 HWZWNRITCLAAPJ-UHFFFAOYSA-N 0.000 description 1
- LCKHDGQZOPBNAN-UHFFFAOYSA-N 2-methyl-5-phenylpent-2-enoic acid 2-phenylethyl 2-methylprop-2-enoate Chemical compound C1(=CC=CC=C1)CCC=C(C(=O)O)C.C(C(=C)C)(=O)OCCC1=CC=CC=C1 LCKHDGQZOPBNAN-UHFFFAOYSA-N 0.000 description 1
- SMLRFTJEWYMOSN-UHFFFAOYSA-N 2-methylprop-2-enoic acid 2-phenoxyethyl 2-methylprop-2-enoate Chemical compound C(C(=C)C)(=O)O.O(C1=CC=CC=C1)CCOC(C(=C)C)=O SMLRFTJEWYMOSN-UHFFFAOYSA-N 0.000 description 1
- PKBZUGSITIBLFK-UHFFFAOYSA-N 3-phenylpropyl prop-2-enoate Chemical compound C=CC(=O)OCCCC1=CC=CC=C1 PKBZUGSITIBLFK-UHFFFAOYSA-N 0.000 description 1
- VTZGENANUSAOEM-UHFFFAOYSA-N C1(=CC=CC=C1)C(C)C=C(C(=O)O)C.C1(=CC=CC=C1)C(C)OC(C(=C)C)=O Chemical compound C1(=CC=CC=C1)C(C)C=C(C(=O)O)C.C1(=CC=CC=C1)C(C)OC(C(=C)C)=O VTZGENANUSAOEM-UHFFFAOYSA-N 0.000 description 1
- LZPQUBBDHBYMAZ-UHFFFAOYSA-N C1(=CC=CC=C1)CCCC=C(C(=O)O)C.C(C(=C)C)(=O)OCCCC1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)CCCC=C(C(=O)O)C.C(C(=C)C)(=O)OCCCC1=CC=CC=C1 LZPQUBBDHBYMAZ-UHFFFAOYSA-N 0.000 description 1
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical class C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical class C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
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Abstract
Description
本發明係有關一種半導體元件及其製造方法,尤其是一種感測模組之結構及其製造方法。The present invention relates to a semiconductor element and its manufacturing method, especially a structure of a sensing module and its manufacturing method.
現今物聯網技術崛起,而物聯網技術中,最主要的開發技術核心就是環境感測,其所使用之感測器,不外乎是環境感測器、電性感測器、磁性感測器或光感測器,感測器是物聯網技術中,替整個物聯網系統擷取外界資訊,甚至是一切環境資訊都要透過感測器來感測、收集、測量外界資訊,因此感測器也隨著半導體科技進步不斷發展,眾多的感測器中,光感測器是相當重要的一種感測元件,其常被運用於環境監測系統、智慧住宅、智慧建築等物聯網相關控制系統,以感測周圍環境內的光線照度,並將感測到的照度結合通訊、物聯網、雲端巨量資料的運算,以提供生活中更便利的服務。更是進一步將感測器技術結合在科技、物理、醫療等,讓人類生活更便利也更安全Nowadays, the Internet of Things technology is rising, and in the Internet of Things technology, the most important development technology core is environmental sensing. The sensors used are nothing more than environmental sensors, electrical sensors, magnetic sensors or Light sensor, the sensor is in the Internet of Things technology, which captures external information for the entire Internet of Things system, and even all environmental information must be sensed, collected, and measured by the sensor, so the sensor is also With the continuous development of semiconductor technology, among many sensors, the light sensor is a very important sensing element, which is often used in the Internet of Things related control systems such as environmental monitoring systems, smart houses, and smart buildings. Sensing the illuminance of light in the surrounding environment, and combining the sensed illuminance with the calculation of communication, Internet of Things, and huge amounts of data in the cloud to provide more convenient services in life. It further combines sensor technology in technology, physics, medical treatment, etc., making human life more convenient and safer
不僅是生活中的應用,作為針對智慧型手機(smartphone)或平板(tablet)等可攜式電子裝置的應用中,亦是有有環境光感測器的研發。電子裝置中的環境光感測器在於電子裝置本身所在的環境亮度進行感測,同時對電子裝置之顯示亮度進行調光的照度感測器、或對電子裝置的使用者介面相對於環境的色調進行感測並對電子裝置之使用者介面進行色調調整。Not only for applications in daily life, but also for applications in portable electronic devices such as smartphones or tablets, there is also research and development of ambient light sensors. The ambient light sensor in the electronic device senses the ambient brightness of the electronic device itself, and at the same time adjusts the display brightness of the electronic device. Sensing and adjusting the color tone of the user interface of the electronic device.
近年來,更是應用穿戴式手環(bracelet)、智慧型手錶(Smart Watch)或耳塞式耳機(canal type earphone)等的穿戴式裝置的技術正嶄露頭角,因而更是開發出對應之內嵌感測器。In recent years, the technology of wearable devices such as bracelets, smart watches, or earphones has emerged, so it is necessary to develop a corresponding embedded sensor. detector.
再者,為了微型化,大致上,感測器為利用半導體製程所製成之半導體元件,例如:場效電晶體(FET),特別是,現今有機高分子材料讓半導體元件的效能提高,因而進一步利用有機高分子材料所作成之有機高分子元件更是現今半導體元件之開發主流,而應用於感測器之半導體製程技術也是逐漸向有機高分子材料發展,惟,半導體材料所製成之感測元件易受外來雜質與環境水氧之影響,導致感測之靈敏度不易提高,特別是在有機高分子材料所製成之光感測器更是大幅地受到外來雜質與環境水氧之影響。Furthermore, for the sake of miniaturization, generally, the sensor is a semiconductor element made by using a semiconductor process, such as a field effect transistor (FET). Further use of organic polymer materials to make organic polymer components is the mainstream of the development of semiconductor components today, and the semiconductor process technology applied to sensors is gradually developing towards organic polymer materials. However, the sense of semiconductor materials made The detection element is easily affected by foreign impurities and ambient water and oxygen, which makes it difficult to improve the sensing sensitivity, especially the light sensor made of organic polymer materials is greatly affected by foreign impurities and ambient water and oxygen.
基於上述之問題,本發明提供一種感測模組之結構及其製造方法,其可簡化製程並形成密閉空腔,以隔絕環境而減少環境外來雜質與環境水氧之影響,而提高感測器之準確性。Based on the above problems, the present invention provides a structure of a sensing module and its manufacturing method, which can simplify the manufacturing process and form a sealed cavity to isolate the environment and reduce the impact of environmental foreign impurities and environmental water and oxygen, and improve the sensor. the accuracy.
本發明之一目的,提供一種感測模組之結構及其製造方法,其利用基板之一第一表面設置元件,並利用基板之一第二表面照射一光源,以讓該光源之光線穿透該基板而照射於接合元件之膠體,或讓該光源之光線激發該基板之一光學轉換層而發出另一光線照射於該膠體,以簡化製程並形成密閉空腔,而隔絕環境並減少環境外來雜質與環境水氧之影響。One object of the present invention is to provide a structure of a sensing module and its manufacturing method, which utilizes a first surface of the substrate to arrange components, and utilizes a second surface of the substrate to irradiate a light source so that the light from the light source can penetrate The substrate is irradiated on the colloid of the bonding element, or the light from the light source excites an optical conversion layer of the substrate to emit another light to irradiate the colloid, so as to simplify the manufacturing process and form a closed cavity, which isolates the environment and reduces the external environment The impact of impurities and ambient water and oxygen.
本發明揭示了一種感測模組之製造方法,其提供一基板,以設置或形成一感測器於該基板之一第一表面上,並接續設置至少一膠體於該第一表面上並圍繞著該感測器,然後將一光學轉換元件設置於該第一表面上並由其一下緣透過該膠體接合該基板,最後由一光源透過該基板之一第二表面照射該膠體,使該膠體固化,以製作成一感測模組。藉此簡化膠體固化方式,並以較為全面的方式照射該膠體,使該膠體固化較完整。The invention discloses a manufacturing method of a sensing module, which provides a substrate for disposing or forming a sensor on a first surface of the substrate, and then disposing at least one glue on the first surface and surrounding it. Next to the sensor, an optical conversion element is arranged on the first surface and the substrate is bonded through the colloid from its lower edge, and finally the colloid is irradiated by a light source through the second surface of the substrate, so that the colloid curing to make a sensing module. In this way, the colloid curing method is simplified, and the colloid is irradiated in a more comprehensive manner, so that the colloid is cured more completely.
本發明提供一實施例,其在於該光源為一光固化光源,該至少一膠體為一光固化樹脂。The present invention provides an embodiment, wherein the light source is a photocurable light source, and the at least one colloid is a photocurable resin.
本發明提供一實施例,其在於該基板之主要材料選自於壓克力、玻璃、藍寶石、矽或其組合,該光學轉換元件之材料選自於矽、鍺、硫化鋅或其組合。The present invention provides an embodiment, wherein the main material of the substrate is selected from acrylic, glass, sapphire, silicon or a combination thereof, and the material of the optical conversion element is selected from silicon, germanium, zinc sulfide or a combination thereof.
本發明提供一實施例,其在於更接續設置一光學透鏡於該光學轉換元件上,使該感測模組之入射光集中至該感測器。The present invention provides an embodiment, which further arranges an optical lens on the optical conversion element to concentrate the incident light of the sensing module to the sensor.
本發明提供一實施例,其在於設置或形成一感測器於該基板之一第一表面上之步驟中,該感測器係電性連接該基板上之一印刷電路。The present invention provides an embodiment in the step of arranging or forming a sensor on a first surface of the substrate, the sensor being electrically connected to a printed circuit on the substrate.
本發明另揭示了一種感測模組之結構,其包含一基板、一感測器、至少一膠體與一光學轉換元件,其中,該基板具有一印刷電路,該感測器設置於該基板之一第一表面上,並電性連接該印刷電路,該至少一膠體設置於該基板之一第一表面上並圍繞該感測器,該光學轉換元件設置於該基板之一第一表面上並以一下緣與該至少一膠體接合,使該光學轉換元件與該感測器之間具有一密閉空腔。The present invention also discloses a structure of a sensing module, which includes a substrate, a sensor, at least one colloid and an optical conversion element, wherein the substrate has a printed circuit, and the sensor is disposed on the substrate On a first surface, and electrically connected to the printed circuit, the at least one colloid is arranged on the first surface of the substrate and surrounds the sensor, the optical conversion element is arranged on the first surface of the substrate and The lower edge is bonded with the at least one colloid, so that there is a closed cavity between the optical conversion element and the sensor.
本發明提供另一實施例,其在於該至少一膠體為一光固化樹脂並經一紫外光固化,該基板之材料選自於壓克力、玻璃、藍寶石、矽或其組合,該光學轉換元件之材料選自於矽、鍺、硫化鋅或其組合。The present invention provides another embodiment, which is that the at least one colloid is a photocurable resin and cured by an ultraviolet light, the material of the substrate is selected from acrylic, glass, sapphire, silicon or a combination thereof, the optical conversion element The material is selected from silicon, germanium, zinc sulfide or a combination thereof.
本發明提供另一實施例,其在於更包含一光學透鏡,設置於該光學轉換元件之一第一表面上,以導引該入射光並集中至該感測器。The present invention provides another embodiment, which further includes an optical lens disposed on a first surface of the optical conversion element to guide the incident light and concentrate it to the sensor.
本發明提供另一實施例,其在於該光學透鏡為一菲涅爾透鏡。The present invention provides another embodiment, in which the optical lens is a Fresnel lens.
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以實施例及配合說明,說明如後:In order to enable your review committee members to have a further understanding and understanding of the characteristics of the present invention and the achieved effects, the following examples and accompanying descriptions are hereby provided:
在說明書及請求項當中使用了某些詞彙指稱特定的元件,然,所屬本發明技術領域中具有通常知識者應可理解,製造商可能會用不同的名詞稱呼同一個元件,而且,本說明書及請求項並不以名稱的差異作為區分元件的方式,而是以元件在整體技術上的差異作為區分的準則。在通篇說明書及請求項當中所提及的「包含」為一開放式用語,故應解釋成「包含但不限定於」。再者,「耦接」一詞在此包含任何直接及間接的連接手段。因此,若文中描述一第一裝置耦接一第二裝置,則代表第一裝置可直接連接第二裝置,或可透過其他裝置或其他連接手段間接地連接至第二裝置。Some terms are used in the specification and claims to refer to specific components. However, those with ordinary knowledge in the technical field of the present invention should understand that manufacturers may use different terms to refer to the same component. Moreover, this specification and The claim item does not use the difference in name as the way to distinguish the components, but the difference in the overall technology of the components as the criterion for distinguishing. "Includes" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to". Furthermore, the term "coupled" herein includes any direct and indirect means of connection. Therefore, if it is described that a first device is coupled to a second device, it means that the first device may be directly connected to the second device, or may be indirectly connected to the second device through other devices or other connection means.
有鑑於習知感測模組之結構及其製造方法因感測器訊號易受外來雜質與環境水氧之影響,導致感測之準確性不易提高,據此,本發明遂提出一種感測模組之結構及其製造方法,以解決習知技術所造成之感測之準確性較差之問題。In view of the fact that the structure of the conventional sensing module and its manufacturing method are easily affected by foreign impurities and ambient water and oxygen, the accuracy of sensing is not easy to improve. Accordingly, the present invention proposes a sensing module The structure of the group and its manufacturing method are used to solve the problem of poor sensing accuracy caused by conventional technologies.
以下,將進一步說明本發明揭示之感測模組之結構及其製造方法所包含之特性、所搭配之製程結構:In the following, the structure of the sensor module disclosed in the present invention and the characteristics included in its manufacturing method, and the matching process structure will be further described:
首先,請參閱第一圖,其為本發明之一實施例之流程圖。如圖所示,本發明之感測模組之製造方法First, please refer to the first figure, which is a flowchart of an embodiment of the present invention. As shown in the figure, the manufacturing method of the sensing module of the present invention
步驟S10:提供基板;Step S10: providing a substrate;
步驟S20: 設置或形成感測器於基板之第一表面上;Step S20: disposing or forming sensors on the first surface of the substrate;
步驟S30: 設置膠體於基板之第一表面上,並圍繞感測器;Step S30: disposing colloid on the first surface of the substrate and surrounding the sensor;
步驟S40: 設置光學轉換元件於基板上並以光學轉換元件之下緣接合膠體,使光學轉換元件與感測器之間具有密閉空腔;以及Step S40: disposing the optical conversion element on the substrate and bonding the glue with the lower edge of the optical conversion element, so that there is a closed cavity between the optical conversion element and the sensor; and
步驟S50: 使用光源經照射至基板之第二表面,以照射並固化膠體。Step S50: using a light source to irradiate the second surface of the substrate to irradiate and cure the colloid.
為了較清楚了解本發明上述實施例之感測模組之製造方法,更進一步參閱第二圖至第六圖,其為本發明之一實施例之部分步驟示意圖。如圖所示,本發明之感測模組10包含一基板12、一感測器14、至少一膠體16與一光學元件18。其中該光學元件18包含一光學轉換元件182。該感測器14、該至少一膠體16、該光學元件18皆是設置於該基板12之一第一表面122上,特別是本實施例中,該基板12上進一步設有至少一導電薄膜1222,以電性連接該感測器14,進而用於連接至外部電路。For a clearer understanding of the manufacturing method of the sensing module according to the above-mentioned embodiments of the present invention, further refer to FIG. 2 to FIG. 6 , which are schematic diagrams of some steps of an embodiment of the present invention. As shown in the figure, the
於步驟S10中,請一併參閱第二圖,該基板12之材料選自於壓克力、玻璃、藍寶石、矽或其組合,以透過濺鍍制程(sputter)或真空蒸鍍制程(vacuum evaporation)而形成該導電薄膜1222於該基板12之一第一表面122,因此即本實施例之步驟S10提供一導電性基板。於步驟S20中,請一併參閱第三圖,該感測器14設置於該基板12之該第一表面122上,進一步是將該感測器14設置於該導電薄膜1222上,使該感測器14電性連接該導電薄膜1222,本發明之該感測器14可以是人體感測或物聯網(IOT)應用上的光感測器、感測物體之振動感測器或磁性感測器,本實施例係以一感測器成品設置於該基板12上作為舉例說明,除此之外,另一實施例更可為透過一半導體製程或一微機電製程形成該感測器14於該基板12之該第一表面122上。於步驟S30中,請一併參閱第四圖,將該至少一膠體16設置於該基板12之該第一表面122上,特別是將該至少一膠體16設置於部分該第一表面122上。In step S10, please also refer to the second figure, the material of the
接續上述,該至少一膠體16為一光固化樹脂,其主要成分可分成游離基化合型與陽離子化合型二大類,游離基化合型光固化樹脂之主要成分選自於丙烯酸、不飽和聚酯或其組合,陽離子化合型光固化樹脂之主要成分選自於環氧、氧雜環丁烷、乙烯醚或其組合。一般光固化樹脂的組成配方可分為三大部份,第一部份為寡聚物(Oligomer),約佔組成中的50%~80%不等,一般寡聚物之性質有低黏度與無臭味,且硬化性優並具有低毒性;第二部份為光反應單體(Reactive Monomer),約佔總量的20%~50%左右,要求性質(1)具光反應性(2)良好的硬化速率(3)良好的溶劑力(4)揮發性低等;第三部份為光起始劑(Photoinitiator),約佔總量的1%~10%,光起始劑之性質為吸引光輻射能,並能誘始聚合作用、(2)良好的熱安定性;其它還可因應性能上之用途需求,而加入添加助劑,甚至少量溶劑等,其中該寡聚物為選自於上述游離基化合型光固化樹脂或陽離子化合型光固化樹脂之外,更可選自於丙烯酸酯或甲基丙烯酸酯,其中甲基丙烯酸酯包含丙烯酸芐酯(benzyl acrylate)、丙烯酸2-苯氧基乙基酯(phenoxyethyl acrylate)、壬基苯氧基聚乙二醇丙烯酸酯(nonylphenoxypolyethylene glycol acrylate)、乙氧基化雙酚A雙丙烯酸酯(ethoxylated bisphenol A diacrylate)、甲基丙烯酸-2-苯氧乙酯(phenoxyethyl methacrylate)、乙氧基化雙酚A二甲基丙烯酸酯(ethoxylated bisphenol A dimethacrylate)、甲基丙烯酸苄酯(benzyl methacrylate)、1-苯乙基甲基丙烯酸酯(1-phenylethyl methacrylate)、2-苯氧乙基甲基丙烯酸酯(2-phenoxyethyl methacrylate)、2-苯乙基甲基丙烯酸酯(2-phenylethyl methacrylate)、3-苯丙基甲基丙烯酸酯(3-phenylpropyl methacrylate)、3-苯丙基丙烯酸酯(3-phenylpropyl acrylate)及2-苯氧乙基丙烯酸酯 (2-phenoxyethyl acrylate)及其組合。復參閱第四圖,該至少一膠體16為圍繞於該感測器14之周圍,並進一步跨過該導電薄膜1222Continuing from the above, the at least one
於步驟S40中,請一併參閱第五圖,該光學轉換元件182為設置於該基板12之該第一表面122上,且該光學轉換元件182之一下緣1822透過該至少一膠體16接合該基板12,其中,該光學轉換元件之材料選自於矽、鍺、硫化鋅或其組合,特別是該光學轉換元件182與該基板12之間形成一密閉空腔1824,該密閉空腔1824可為一空氣層或一真空層。In step S40, please also refer to the fifth figure, the
於步驟S50中,請一併參閱第六圖,利用光源20發出複數第一光線22並照射至該基板12之一第二表面124,本實施例之基板12由於該基板12為可透光,因而讓該光線22穿透該基板12,以照射至該至少一膠體16,藉由該膠體16之光固化特性,因而藉由該第一光線22之照射而固化,並形成固化之該膠體16,以形成該感測模組10,本發明之該光源20為一光固化光源,本實施例係以一紫外光源作為舉例說明,因此該些第一光線22相對應為紫外光線,且本實施例之光固化樹脂為對應之UV光固化樹脂,即所謂的UV膠。由以上步驟S10至步驟S50,可改善感測器製程上的製程效率並改善感測器本身之可靠性,特別是該光學轉換元件182之一下緣1822透過該至少一膠體16接合該基板12,進一步保護該感測器14,也就是該膠體16固化後即可透過該密閉空腔1824以隔絕環境而減少環境外來雜質與環境水氧之影響。In step S50, please also refer to the sixth figure, the
如第七圖所示,其為本發明之另一實施例之步驟示意圖。如圖所示,本發明之基板12更可進一步設置一光轉換層121,更可將該些第一光線22轉換為第二光線23,以進一步藉由該些第二光線23照射該膠體16,相對應而言,該膠體16即為相對應於該些第二光線23之波長,以進行光固化,進而在該膠體16固化後即可透過該密閉空腔1824以隔絕環境而減少環境外來雜質與環境水氧之影響,其中本實施例之該些第二光線23之波長為大於該些第一光線22之波長,如此本實施例中,該膠體16對應之波長範圍為可見光至紅外光之波長範圍。As shown in Figure 7, it is a schematic diagram of the steps of another embodiment of the present invention. As shown in the figure, the
如第八圖所示,其為本發明之另一實施例之結構示意圖,其中第八圖與第五圖之差異在於第八圖之光學元件18進一步設有一第二光學透鏡184,其中該第二光學透鏡184之材料亦可為矽、鍺、硫化鋅或其組合,本實施例之第二光學透鏡184為設置於該光學轉換元件182之一上表面1826,藉由該第二光學透鏡184將外部之複數個入射光30集中折射,以將該入射光30往感測器14集中,特別是本發明之該光學轉換元件182與該該基板12之間藉由該膠體16形成為該密閉空腔1824,更有利於該入射光30在該光學轉換元件182內傳導,特別是該密閉空腔1824為一真空層時,更可進一步提高該感測器14之偵測靈敏度。As shown in the eighth figure, it is a structural schematic view of another embodiment of the present invention, wherein the difference between the eighth figure and the fifth figure is that the
如第九圖所示,其為本發明之另一實施例之結構示意圖,其中第八圖與第九圖之差異在於第八圖之該光學元件18分為該光學轉換元件182與該第二光學透鏡184,而第九圖為整合成該光學元件18,也就是該光學轉換元件182與該第二光學透鏡184合為一體,因而減少接面,以避免光學元件18內部有全反射之情況發生。上述之本發明之該光學轉換元件182與該第二光學透鏡184之間更可另外透過該膠體16相同成分之另一膠體接合。As shown in Figure 9, it is a structural schematic diagram of another embodiment of the present invention, wherein the difference between Figure 8 and Figure 9 is that the
以上實施例,即藉由本發明之該光學元件18或該光學轉換元件182,將外來雜質與環境水氧隔絕,因而改善感測靈敏度,且該光學轉換元件182可用以進一步過濾該入射光30之波長對應於該感測器14之感測波長範圍,並可進一步集中該入射光30之照射範圍於該感測器14上,即進一步具有濾鏡與透鏡之功能。紅外線(英語:Infrared,簡稱IR)是波長介乎微波與可見光之間的電磁波,其波長在760奈米(nm)至1毫米(mm)之間,是波長比紅光長的非可見光,對應頻率約是在430 THz到300 GHz的範圍內。In the above embodiment, by using the
而,本發明之感測器14更可為紅外線感測器,其依據感測波長範圍可應用於1:近紅外線影像應用,波長範圍在700奈米至900奈米,並利用加入特殊染料的乳劑產生光化學反應,使此一波長範圍內的光變化轉為化學變化,以形成影像,或應用於2 :近紅外線電子感光應用,波長範圍700奈米至2,000奈米,利用以矽為主的化合物晶體產生光電反應,形成電子影像。甚至是遠紅外線電子感光應用,波長範圍3000奈米至4000奈米以及8000奈米至14000奈米,特別是現今人體紅外線感測應用於8000奈米至14000奈米,如此該光學轉換元件182即進一步具有波長過濾功能,因而將入射光30之波長過濾成該感測器14對應之感測波長範圍內之一波長,且該感測器14更可為一矩陣式光感測器,因此該導電薄膜1222將會呈現複數個接點。紅外線感測器在真空下可增加感測靈敏度,因此,當本發明之該感測器14為一紅外線感測器,且該密閉空腔1824內為一真空層時,該感測器14之感測靈敏度將獲得提升。However, the
故本發明實為一具有新穎性、進步性及可供產業上利用者,應符合我國專利法專利申請要件無疑,爰依法提出發明專利申請,祈 鈞局早日賜准專利,至感為禱。Therefore, the present invention is novel, progressive and can be used in industry. It should meet the patent application requirements of my country's patent law. I file an invention patent application in accordance with the law. I pray that the bureau will grant the patent as soon as possible. I sincerely pray.
惟以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍,舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。However, the above-mentioned ones are only preferred embodiments of the present invention, and are not used to limit the scope of the present invention. For example, all equal changes and modifications are made according to the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention. , should be included in the patent application scope of the present invention.
10:感測模組 12:基板 121:光轉換層 122:第一表面 124:第二表面 14:感測器 16:膠體 18:光學元件 182:光學轉換元件 1822:下緣 1824:密閉空腔 1826:上表面 184:第二光學透鏡 1222:導電電路 20:光源 22:光線 30:入射光 S10~S50:步驟10: Sensing module 12: Substrate 121: Light conversion layer 122: first surface 124: second surface 14: Sensor 16: colloid 18: Optical components 182: Optical conversion element 1822: lower edge 1824: Closed cavity 1826: upper surface 184: second optical lens 1222: conductive circuit 20: light source 22: light 30: incident light S10~S50: steps
第一圖:其為本發明之一實施例之流程圖; 第二A圖與第二B圖:其為本創作之一實施例之部分步驟示意圖; 第三A圖與第三B圖:其為本創作之一實施例之部分步驟示意圖; 第四A圖與第四B圖:其為本創作之一實施例之部分步驟示意圖; 第五A圖與第五B圖:其為本創作之一實施例之部分步驟示意圖; 第六圖:其為本發明之一實施例之部分步驟示意圖; 第七圖:其為本發明之另一實施例之部分步驟示意圖; 第八圖:其為本發明之另一實施例之結構示意圖;以及 第九圖:其為本發明之另一實施例之結構示意圖。The first figure: it is a flowchart of an embodiment of the present invention; The second figure A and the second figure B: it is a schematic diagram of some steps of an embodiment of this creation; The third figure A and the third figure B: it is a schematic diagram of some steps of an embodiment of this creation; The fourth figure A and the fourth figure B: it is a schematic diagram of some steps of an embodiment of this creation; The fifth figure A and the fifth figure B: it is a schematic diagram of some steps of an embodiment of this creation; Figure 6: It is a schematic diagram of some steps of an embodiment of the present invention; The seventh figure: it is a schematic diagram of some steps of another embodiment of the present invention; Figure 8: It is a schematic structural view of another embodiment of the present invention; and Figure 9: It is a structural schematic diagram of another embodiment of the present invention.
S10~S50:步驟S10~S50: steps
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KR100722118B1 (en) * | 2006-09-04 | 2007-05-25 | 삼성에스디아이 주식회사 | Organic light emitting display device |
CN201047764Y (en) * | 2007-05-31 | 2008-04-16 | 黄朝钟 | Light sensing module |
KR101933952B1 (en) * | 2011-07-01 | 2018-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device, electronic device, and lighting device |
CN104035255B (en) * | 2014-06-05 | 2017-03-22 | 京东方科技集团股份有限公司 | Array substrate, display panel and manufacturing method |
-
2021
- 2021-06-30 TW TW110124142A patent/TWI785663B/en active
- 2021-06-30 TW TW110207660U patent/TWM619528U/en unknown
- 2021-07-02 CN CN202110749949.1A patent/CN113959467A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060049396A1 (en) * | 2004-09-09 | 2006-03-09 | Karl Pichler | Sealing of electronic device using absorbing layer for glue line |
TW200834938A (en) * | 2007-02-08 | 2008-08-16 | Advanced Chip Eng Tech Inc | Image sensor package with die receiving opening and method of the same |
TW202107647A (en) * | 2019-08-07 | 2021-02-16 | 勝麗國際股份有限公司 | Package component |
Also Published As
Publication number | Publication date |
---|---|
TWM619528U (en) | 2021-11-11 |
CN113959467A (en) | 2022-01-21 |
TW202203451A (en) | 2022-01-16 |
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