CN111694179A - Display device and preparation method thereof - Google Patents
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- CN111694179A CN111694179A CN202010487530.9A CN202010487530A CN111694179A CN 111694179 A CN111694179 A CN 111694179A CN 202010487530 A CN202010487530 A CN 202010487530A CN 111694179 A CN111694179 A CN 111694179A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Electromagnetism (AREA)
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Abstract
The present disclosure provides a display device and a method of manufacturing the same. The display device comprises a display panel, a light sensation sensor arranged on the display panel, a polarizer and a light conversion film arranged on the upper surface or the lower surface of the polarizer. When the light conversion film is prepared by using the up-conversion material, light in an infrared light wave band can be converted into light in a visible light area sensitive to the light sensor. When the light conversion film is prepared by using the down-conversion material, light in an ultraviolet light wave band can be converted into light in a visible light area sensitive to the light sensor. The problem that the response performance of the amorphous silicon semiconductor light sensing panel in an infrared light area is weak is solved.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a display device and a method for manufacturing the same.
Background
With the continuous development of display control technology, more and more display devices, especially large-sized screen display devices, have been provided with human-computer interaction functions. The screen with photosensitive performance can provide hardware support for more interactive applications. Therefore, the panel with the photosensitive performance is developed, the perception function is enhanced, and the product competitiveness can be better improved.
In developing a panel having photosensitive properties, it is necessary to first define the photosensitive range of the semiconductor material and the target of the photosensitive. According to the spectral classification, light is divided into a visible light region, an ultraviolet light region and an infrared light region. The semiconductor materials with different forbidden band widths have different response performances to light with different wave bands. Currently, most of the semiconductor layers commonly used in the panel process are amorphous silicon (a-Si) layers. The light sensor (sensor) using amorphous silicon has a strong light response performance in a visible light region, but has a weak response performance in an infrared light region. Therefore, it is worth examining how to improve the infrared sensing region of the conventional amorphous silicon semiconductor panel.
Therefore, the problem that the response performance of the existing amorphous silicon semiconductor light sensing panel in an infrared light area is weak needs to be solved.
Disclosure of Invention
The invention provides a display device and a preparation method thereof, which are used for relieving the technical problem that the response performance of the existing amorphous silicon semiconductor light sensing panel in an infrared region is weak.
In order to solve the above problems, the technical solution provided by the present disclosure is as follows:
the embodiment of the disclosure provides a preparation method of a display device, which comprises the following steps: step S10, preparing a light conversion film for conversion between lights of different wavelengths. Step S20, providing a polarizer, and attaching the light conversion film to the upper surface or the lower surface of the polarizer. Step S30, providing a display panel, and attaching the polarizer to the display panel, wherein the display panel is provided with a light sensor.
In the method for manufacturing a display device provided by the embodiment of the present disclosure, the step of manufacturing a light conversion film further includes the steps of: and step S11, selecting a conversion material, and coating a silicon oxide film on the surface of the conversion material to be used as a protective layer to form conversion nano-particles. And step S12, doping the conversion nanoparticles into a high-molecular polymer monomer solution, and copolymerizing the conversion nanoparticles and the polymer monomer in the high-molecular polymer monomer solution to form the light conversion film.
In the method for manufacturing a display device provided by the embodiment of the disclosure, the conversion material comprises an up-conversion material, and the up-conversion material comprises NaYF4: Er.
In a method of making a display device provided by an embodiment of the present disclosure, the conversion material comprises a down-conversion material.
In the method for manufacturing a display device provided by the embodiment of the present disclosure, the high polymer monomer solution includes one of a polymethyl methacrylate solution and a polyethylene terephthalate solution.
In the method for manufacturing a display device provided by the embodiment of the disclosure, the semiconductor material of the light sensor comprises amorphous silicon.
The embodiment of the disclosure provides a display device, which includes a display panel, a polarizer, and a light conversion film. The display panel includes a light sensor. The polarizer is arranged on the display panel. The light conversion film is attached to the polarizer and comprises conversion nanoparticles. Wherein the conversion nanoparticles comprise an up-conversion material and a protective layer coated on the surface of the up-conversion material.
In the display device provided by the embodiment of the present disclosure, the material of the protective layer includes silicon oxide.
In the display device provided by the embodiment of the present disclosure, the light conversion film is attached to the upper surface or the lower surface of the polarizer.
The embodiment of the disclosure provides a display device, which includes a display panel, a polarizer, and a light conversion film. The display panel includes a light sensor. The polarizer is arranged on the display panel. The light conversion film is attached to the polarizer and comprises conversion nanoparticles. Wherein the conversion nanoparticles comprise a down-conversion material and a protective layer coated on the surface of the down-conversion material.
The beneficial effects of this revelation do: in the display device and the preparation method thereof, the light conversion film is prepared by adopting the up-conversion material and is arranged on the polarizer, so that the light in the infrared light band insensitive to the light sensor is converted into the light in the visible light region sensitive to the light sensor. The problem that the amorphous silicon semiconductor light sensing panel is weak in response performance in an infrared light area is solved. Moreover, the light conversion film is coated on the panel, so that the influence on the reliability of the panel is small, and the risk of reliability is avoided. In addition, the light conversion film can be prepared by using a down-conversion material instead of or simultaneously, the down-conversion material can convert the light of the ultraviolet light wave band insensitive to the light sensor into the light of the visible light region sensitive to the light sensor, and the absorption of the light sensing panel to the light of each wave band is expanded. Therefore, the light response performance of the photosensitive panel is improved, the signal to noise ratio is increased, and the sensitivity gain is increased. And the light response performance of the photosensitive panel is improved by arranging the light conversion film, the light conversion film can be carried out on the basis of keeping the existing mass production framework, the amorphous silicon semiconductor photosensitive panel does not need to be doped with materials, and the semiconductor band gap does not need to be adjusted.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a first side view structure of a display device according to an embodiment of the disclosure;
fig. 2 is a schematic structural diagram of a housing of a display device according to an embodiment of the disclosure;
FIG. 3 is a schematic side view of a light sensor according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a first structure of a nanoparticle provided by an embodiment of the present disclosure;
FIG. 5 is a schematic diagram illustrating a second side view structure of a display device according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram illustrating a second structure of a transforming nanoparticle according to an embodiment of the disclosure;
FIG. 7 is a schematic structural diagram of a polarizer according to an embodiment of the disclosure;
FIG. 8 is a schematic flow chart illustrating a method for fabricating a display device according to an embodiment of the present disclosure;
FIG. 9 is a schematic diagram illustrating a structure of a light conversion film fabricated by a method for fabricating a display device according to an embodiment of the present disclosure;
fig. 10 is a schematic structural view illustrating a light conversion film attached to a polarizer in a manufacturing method of a display device according to an embodiment of the disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the disclosure may be practiced. Directional phrases used in this disclosure, such as [ upper ], [ lower ], [ front ], [ back ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure. In the drawings, elements having similar structures are denoted by the same reference numerals.
In one embodiment, a display device 100 is provided, as shown in fig. 1, which includes a display panel 10, a light sensor 20, a Polarizer (POL) 30, a light conversion film 40, and a cover plate 50. The light sensor 20 is disposed on the display panel 10. The polarizer 30 is attached to the surface of the display panel 10 on which the light sensor 20 is disposed. The cover plate 50 is disposed on the polarizer 30. The light conversion film 40 is attached to the polarizer 30. Wherein the light conversion film 40 is attached to the lower surface of the polarizer 30.
Specifically, the display device 100 further includes a housing 60, as shown in fig. 2. The housing 60 includes a light-tight enclosure 61 and a light-transmissive enclosure 62. The display panel 10, the light sensor 20, the polarizer 30, the light conversion film 40, and the cover plate 50 are disposed in the housing 60. The transparent casing 62 corresponds to a display area, i.e., a visible area, of the display device, and the opaque casing 61 is disposed in an area outside the visible area, so as to protect the display device and prevent external light from entering the display device. Meanwhile, the incident light X of the light sensor 20 passes through the transparent housing 62 to reach the light sensor 20.
Specifically, the display panel 10 includes a liquid crystal display panel, an OLED display panel, a Micro LED display panel, and the like.
Further, the light sensor 20 may be disposed on the display panel 10, but may also be integrated into the display panel 10, embedded in the display panel 10, or disposed below the display panel 10, which is not limited to the disclosure. The light sensor 20 may be configured for use in human-computer interaction applications such as ambient light detection, receiving remote infrared remote control signals, and the like.
Further, the photosensor 20 uses amorphous silicon as a semiconductor layer, and the amorphous silicon has a strong light response property in a visible light region.
Further, the photosensor 20 using amorphous silicon as a semiconductor layer may have a PIN structure as shown in fig. 3, and includes a cathode 21, an electron transport layer 22, a semiconductor layer 23, a hole transport layer 24, and an anode 25, which are stacked.
Further, the polarizer 30 is attached to the display panel 10 by an OCA (optically Clear adhesive) optical adhesive, which is a transparent high-viscosity adhesive. Specifically, the polarizer 30 is attached to the display panel 10 on the side where the light sensor 20 is disposed.
Further, a light conversion film 40 is attached to the lower surface of the polarizer 30, and the light conversion film 40 includes conversion nanoparticles 41 and a conversion film substrate 42. Specifically, as shown in fig. 4, the conversion nanoparticles 41 include an up-conversion material 411 and a protective layer 412 coated on the surface of the up-conversion material 411. The light conversion film 40 is used for converting light in an infrared light band to which the light sensor 20 is not sensitive into light in a visible light region to which the light sensor 20 is sensitive. The lower surface of the polarizer 30 refers to a surface of the polarizer 30 facing the display panel 10. The light conversion film 40 is attached to the lower surface of the polarizer 30, that is, the light conversion film 40 covers the display panel 10, so that the influence on the reliability of the display panel 10 is small, and there is no risk of reliability.
Specifically, the upconverting material 411 is prepared in a shape of a sphere or an ellipse, and the present disclosure is described by taking a sphere as an example, but the present disclosure is not limited thereto. A silicon oxide film is coated on the surface of the spherical upconversion material 411 as a protective layer 412 by a coating process or the like to form the conversion nanoparticles 41. Of course, the protection layer 412 may be made of other inorganic materials. The up-conversion material 411 includes conversion materials such as NaYF4: Er doped with a plurality of different rare earth elements.
Further, the conversion nanoparticles 41 are molded into the conversion film substrate 42 to form the light conversion film 40. The conversion film substrate 42 is a high-transmittance polymer film substrate, for example, the conversion film substrate 42 includes a high-transmittance polymer film substrate such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), and the like.
Specifically, a high-molecular material having high transmittance such as polymethyl methacrylate or polyethylene terephthalate is doped in an organic solvent to form a polymer monomer solution. The conversion nanoparticles 41 are doped in a polymer monomer solution, so that the conversion nanoparticles 41 are copolymerized with the polymer monomer in the polymer monomer solution to form the light conversion film 40.
Specifically, the upconversion material is excited by low-energy light and emits high-energy light. That is, after being excited by light with long wavelength and low frequency, the up-conversion material emits light with short wavelength and high frequency. The upconversion material can be doped with different rare earth elements, and can convert light with a wavelength of 980 nanometers (nm) into light with a wavelength of 480nm, and can also convert light with a wavelength of 808nm into light with a wavelength of 550 nm. Therefore, the light conversion film 40 prepared by using the characteristics of the up-conversion material can convert the light in the external infrared light band (780nm-980nm) into the light in the sensitive band (480 nm-600nm) of the light sensor, namely the light in the visible light region. Thereby enhancing the response of the light-sensing panel to infrared light under the a-Si structure.
Further, the light conversion film 40 may be configured as a whole film layer attached to the lower surface of the polarizer 30, or may be configured as a patterned film layer attached to the lower surface of the polarizer 30 according to actual requirements.
In this embodiment, the light conversion film is made of an up-conversion material and disposed on the lower surface of the polarizer, so as to convert the light in the infrared band to which the light sensor is not sensitive into the light in the sensitive band. The response of the light-sensing panel to infrared light under the a-Si structure is enhanced. The method can be carried out on the basis of keeping the existing mass production framework, does not need material doping, does not need adjustment of the band gap of the semiconductor, has less cost increase and greatly improves the performance. Meanwhile, the light conversion film is coated on the display panel, and is less influenced than the light sensor in reliability and has no risk of reliability.
In one embodiment, different from the above embodiments, the light conversion film is attached to the upper surface of the polarizer, that is, the surface of the polarizer away from the display panel. For other descriptions, please refer to the above embodiments, which are not repeated herein.
In one embodiment, a display device 101 is provided, as shown in FIG. 5, which includes a display panel 10, a light sensor 20, a polarizer 30, a light conversion film 40', and a cover plate 50. The light sensor 20 is disposed on the display panel 10. The polarizer 30 is attached to the surface of the display panel 10 on which the light sensor 20 is disposed. The light conversion film 40' is attached to the polarizer 30. Wherein the light conversion film 40' is attached to the upper surface of the polarizer 30. The cover plate 50 is disposed on the light conversion film 40'.
Specifically, the display device 101 further includes a housing. The display panel 10, the light sensor 20, the polarizer 30, and the light conversion film 40' are disposed in the housing. The structure of the housing can be described with reference to fig. 2 and will not be described herein.
Specifically, the light sensor 20 may be disposed on the display panel 10, but may also be integrated into the display panel 10, embedded in the display panel 10, or disposed below the display panel 10, which is not limited to the disclosure. The light sensor 20 may be configured for use in human-computer interaction applications such as ambient light detection, receiving remote infrared remote control signals, and the like.
Further, the photosensor 20 uses amorphous silicon as a semiconductor layer, and the amorphous silicon has a strong light response property in a visible light region.
Further, the polarizer 30 is attached to the display panel 10 by OCA optical cement. Specifically, the polarizer 30 is attached to the display panel 10 on the side where the light sensor 20 is disposed.
Further, a light conversion film 40 ' is attached to the upper surface of the polarizer 30, and the light conversion film 40 ' includes conversion nanoparticles 41 ' and a conversion film substrate 42. Specifically, as shown in fig. 6, the conversion nanoparticles 41' include a down-conversion material 413 and a protective layer 412 coated on the surface of the down-conversion material 413. The light conversion film 40' is used for converting light in an ultraviolet light band to which the photosensor 20 is not sensitive into light in a visible light region to which the photosensor 20 is sensitive. The light conversion film 40 'is attached to the upper surface of the polarizer 30, that is, the light conversion film 40' covers the display panel 10, so that the polarization characteristics required by the light path inside the display device are not affected, the influence on the reliability of the display panel 10 is small, and the risk of reliability is avoided.
Specifically, the down-conversion material 413 is prepared in a shape of a sphere or an ellipse, and the present disclosure is described by taking a sphere as an example, but the present disclosure is not limited thereto. A silicon oxide film is coated on the surface of the spherical down-conversion material 413 as a protective layer 412 by a coating process, etc. to form the conversion nanoparticles 41'. Of course, the protection layer 412 may be made of other inorganic materials. The down-conversion material 413 is a conversion material formed by doping of a plurality of different rare earth elements.
Further, the conversion nanoparticles 41 'are molded into the conversion film substrate 42 to form the light conversion film 40'. The conversion film substrate 42 is a high-transmittance polymer film substrate, and for example, the conversion film substrate includes a high-transmittance polymer film substrate such as polymethyl methacrylate or polyethylene terephthalate.
Specifically, a high-molecular material having high transmittance such as polymethyl methacrylate or polyethylene terephthalate is doped in an organic solvent to form a polymer monomer solution. The conversion nanoparticles 41 ' are doped in a high molecular polymer monomer solution, so that the conversion nanoparticles 41 ' are copolymerized with the polymer monomer in the high molecular polymer monomer solution to form the light conversion film 40 '.
Specifically, the down-conversion material is excited by high-energy light to emit low-energy light. That is, after being excited by short-wavelength and high-frequency light, the down-conversion material emits light with long wavelength and low frequency. Therefore, the light conversion film prepared by utilizing the characteristics of the down-conversion material can convert the light in the external ultraviolet light wave band into the light in the sensitive wave band of the light sensor, namely the light in the visible light area. Thereby enhancing the response of the panel to ultraviolet light under the a-Si architecture. Meanwhile, the response of the photosensitive panel to light of different wave bands is enriched, and further the application scenes of the photosensitive panel are enriched.
Further, the light conversion film 40' may be configured as a whole film layer attached to the lower surface of the polarizer 30, or may be configured as a patterned film layer attached to the lower surface of the polarizer 30 according to actual requirements. Of course, a light conversion film prepared using the characteristics of the down conversion material may be attached to the upper surface of the polarizer 30.
In one embodiment, different from the above embodiments, the light conversion film is integrally disposed with the polarizer and disposed on an inner film layer of the polarizer.
Specifically, as shown in fig. 7, the polarizer 30' includes a first protective film 31, a light conversion film 40, a Pressure Sensitive Adhesive (PSA) film 32, a triacetyl cellulose (TAC) film 33, a Polyvinyl Alcohol (PVA) 34, a triacetyl cellulose (TAC) film 33, and a composite protective film 35, which are stacked. The polarizer 30' is formed by polyvinyl alcohol 34, but the polyvinyl alcohol 34 is easily hydrolyzed, and a cellulose triacetate film 33 with high light transmittance, good water resistance and certain mechanical strength needs to be compounded on the upper surface and the lower surface of the polyvinyl alcohol 34 for protection. The first protective film 31 is an isolation film (Releasefilm) for protecting the upper layers of pressure sensitive adhesive and other films. The composite protective film 35 is used to protect a lower film such as Triacetylcellulose (TAC). The light conversion film 40 is disposed between the first protective film 31 and the pressure-sensitive adhesive film. Meanwhile, the light conversion film can be prepared from an up-conversion material or a down-conversion material according to different application scenes.
In addition, in one embodiment, the light conversion film may also be fabricated using both up-conversion materials and down-conversion materials.
It is to be understood that the light conversion film 40 of the present disclosure is not limited to being disposed between the first protective film 31 and the pressure-sensitive adhesive film 32 of the polarizer 30 ', and the light conversion film 40 may be disposed between any two layers or between a plurality of layers between the first protective film 31 and the composite protective film 35 of the polarizer 30'. For other descriptions, please refer to the above embodiments, which are not repeated herein.
In one embodiment, a method for manufacturing a display device is provided, as shown in fig. 8, which includes the steps of:
step S10, preparing a light conversion film for conversion between lights of different wavelengths.
Specifically, a conversion material is selected, and a protective layer is coated on the surface of the conversion material to form conversion nanoparticles. The conversion material is formed by doping with a plurality of different rare earth elements.
Specifically, as shown in fig. 4, a protective layer 412 is coated on the surface of the upper conversion material 411 to form the conversion nanoparticles 41. The upconverting material 411 includes NaYF4 Er and the like doped with a variety of different rare earth elements to form the converting material. The upconverting material is excited by low energy light and emits high energy light. That is, after being excited by light with long wavelength and low frequency, the up-conversion material emits light with short wavelength and high frequency.
Alternatively, the conversion material may be a down-conversion material according to actual requirements and different application scenarios. As shown in fig. 6, a protective layer 412 is applied to the surface of the down-conversion material 413 to form conversion nanoparticles 41'. The down-converting material is excited by high-energy light and emits light with low energy. That is, after being excited by short-wavelength and high-frequency light, the down-conversion material emits light with long wavelength and low frequency.
Specifically, the material of the protection layer 412 includes an inorganic material such as silicon oxide.
Further, taking the example that the conversion material is the up-conversion material, the conversion nanoparticles 41 are doped in the polymeric monomer solution, so that the conversion nanoparticles 41 and the polymeric monomer in the polymeric monomer solution are copolymerized to form the light conversion film 40, such as the light conversion film 40 shown in fig. 9, and the conversion nanoparticles 41 are plastically packaged in the conversion film substrate 42.
Specifically, the polymer monomer solution includes one of a polymethyl methacrylate solution, a polyethylene terephthalate solution, and the like.
Specifically, the polymer monomer solution is formed by doping a high-transmittance polymer material such as polymethyl methacrylate, polyethylene terephthalate, or the like in an organic solvent.
Step S20, providing a polarizer, and attaching the light conversion film to the upper surface or the lower surface of the polarizer, such as attaching the light conversion film 40 to the lower surface of the polarizer 30 as shown in fig. 10.
Step S30, providing a display panel 10, and attaching the polarizer 30 to the display panel 10, wherein the display panel 10 is provided with the light sensor 20, forming the structure shown in fig. 1.
Specifically, the polarizer to which the light conversion film is attached to the display panel through OCA optical cement. The polaroid is attached to one surface, provided with the light sensation sensor, of the display panel.
Specifically, the light sensor uses amorphous silicon as a semiconductor layer, and the amorphous silicon has strong light response performance in a visible light region.
Furthermore, the light conversion film prepared by the up-conversion material can convert the light of the external infrared light wave band insensitive to the light sensor into the light of the sensitive wave band of the light sensor, namely the light of the visible light region. Thereby enhancing the response of the panel to infrared light under the a-Si architecture.
Furthermore, the light conversion film prepared by the down conversion material can convert the light of the external ultraviolet light wave band insensitive to the light sensor into the light of the sensitive wave band of the light sensor, namely the light of the visible light region. Thereby enhancing the response of the panel to infrared light under the a-Si architecture. The response of the photosensitive panel to light of different wave bands is enriched, and further the application scenes of the photosensitive panel are enriched.
Further, a cover plate 50 is coated on the light conversion film 40, as shown in fig. 1.
According to the above embodiments:
the display device comprises a display panel, a light sensation sensor arranged on the display panel, a polarizer and a light conversion film arranged on the upper surface or the lower surface of the polarizer. When the light conversion film is prepared by using the up-conversion material, light in an infrared light wave band can be converted into light in a visible light area sensitive to the light sensor. The problem that the amorphous silicon semiconductor light sensing panel is weak in response performance in an infrared light area is solved. Meanwhile, when the light conversion film is prepared by using a down-conversion material, light in an ultraviolet light wave band can be converted into light in a visible light area sensitive to the light sensor. The response of the photosensitive panel to light of different wave bands is enriched, and further the application scenes of the photosensitive panel are enriched. Therefore, the light response performance of the photosensitive panel is improved, the signal to noise ratio is increased, and the sensitivity gain is increased.
In summary, although the present disclosure has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present disclosure, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, so that the scope of the present disclosure is defined by the appended claims.
Claims (10)
1. A method for manufacturing a display device is characterized by comprising the following steps:
step S10, preparing a light conversion film for converting light with different wavelengths;
step S20, providing a polarizer, and attaching the light conversion film to the upper surface or the lower surface of the polarizer; and
step S30, providing a display panel, and attaching the polarizer to the display panel, wherein the display panel is provided with a light sensor.
2. The method of manufacturing a display device according to claim 1, wherein the step of manufacturing a light conversion film further comprises the steps of:
step S11, selecting a conversion material, and coating a silicon oxide film on the surface of the conversion material to be used as a protective layer to form conversion nano-particles; and
and step S12, doping the conversion nanoparticles into a high-molecular polymer monomer solution, and copolymerizing the conversion nanoparticles and the polymer monomer in the high-molecular polymer monomer solution to form the light conversion film.
3. The method of claim 2, wherein the conversion material comprises an up-conversion material comprising NaYF4: Er.
4. The method of claim 2, wherein the conversion material comprises a down conversion material.
5. The method of claim 2, wherein the polymeric monomer solution comprises one of a polymethylmethacrylate solution and a polyethylene terephthalate solution.
6. The method for manufacturing a display device according to claim 1, wherein the semiconductor material of the photosensor comprises amorphous silicon.
7. A display device, comprising:
a display panel including a light sensor;
the polaroid is arranged on the display panel; and
the light conversion film is attached to the polaroid and comprises conversion nanoparticles;
wherein the conversion nanoparticles comprise an up-conversion material and a protective layer coated on the surface of the up-conversion material.
8. The display device according to claim 7, wherein a material of the protective layer comprises silicon oxide.
9. The display device according to claim 7, wherein the light conversion film is attached to an upper surface or a lower surface of the polarizer.
10. A display device, comprising:
a display panel including a light sensor;
the polaroid is arranged on the display panel; and
the light conversion film is attached to the polaroid and comprises conversion nanoparticles;
wherein the conversion nanoparticles comprise a down-conversion material and a protective layer coated on the surface of the down-conversion material.
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