TWI785195B - Semiconductor device - Google Patents

Abstract

The semiconductor device of the present invention has: a light receiving element having a hole formed in a predetermined area; a light emitting element disposed in the hole of the light receiving element; and a first resin covering the peripheral portion of the light receiving element; the surface of the light receiving element and the light emitting element The surfaces of the elements lie on substantially the same plane.

Description

Semiconductor device

The present invention relates to a semiconductor device.

Conventionally, a light-receiving and light-emitting unit used in an optical encoder and the like adopts a structure in which a light-emitting element is mounted on a chip provided with a light-receiving element. The light-receiving and light-emitting unit reflects light from the light-emitting element on an object to be measured arranged outside the light-receiving and light-emitting unit, and receives the reflected light by the light-receiving element to transmit a signal. This structure is a structure in which light-emitting elements are laminated on light-receiving elements, so the thickness of the light-receiving and light-emitting elements becomes thicker. In a photocoupler of the type having a reflective surface inside a light-receiving and light-emitting element, there is known a structure in which a light-emitting element receiving hole is provided approximately in the center of the light-receiving element, and a light-emitting element is arranged in the light-emitting element receiving hole. In this structure, a reflective layer is provided on the peripheral side of the light-emitting element receiving hole, and the light from the light-emitting element is reflected on the reflective layer. According to this structure, since the light-emitting element is arranged in the light-emitting element housing hole provided in the light-receiving element, the thickness of the light-receiving and light-emitting unit can be reduced (for example, refer to Patent Document 1).

[Prior Art Literature] [Patent Document]

Patent Document 1: Japanese Patent Laid-Open No. 58-148954

In the light-receiving and emitting unit described in the above-mentioned Patent Document 1, the light of the light-emitting element is reflected on the reflective layer provided on the peripheral side of the light-emitting element receiving hole, so the thickness of the light-receiving element must be thicker than the thickness of the light-emitting element, in other words The light-emitting surface of the light-emitting element is arranged at a higher position than the light-receiving surface of the light-receiving element to increase the reflectivity. That is, the positions in the height direction of the light receiving surface of the light receiving element and the light emitting surface of the light emitting element are different. Therefore, the distance from the light-receiving surface of the light-receiving element to the object to be measured is different from the distance from the light-emitting surface of the light-emitting element to the object to be measured, and a high detection sensitivity cannot be obtained.

According to the first aspect, the semiconductor device includes: a light-receiving element having a hole formed in a predetermined region; and a lead frame having a light-emitting element accommodating portion formed with a concave portion, the light-emitting element accommodating portion being accommodated in the hole of the light-receiving element a light-emitting element provided on the bottom inner surface of the light-emitting element housing portion of the lead frame; a lead terminal provided along the outer periphery of the light-receiving element and separated from the lead frame; and a first resin covering The peripheral portion of the above-mentioned light-receiving element; the above-mentioned light-emitting element is bonded to the bottom inner surface of the above-mentioned light-emitting element housing part of the above-mentioned lead frame by a conductive adhesive; and the light-receiving surface of the above-mentioned light-receiving element and the light-emitting surface of the above-mentioned light-emitting element are located substantially on the same plane.

According to the second aspect, the semiconductor device includes: a light receiving element having a hole formed in a predetermined region; a light emitting element disposed in the hole of the light receiving element; and a first resin covering the peripheral portion of the light receiving element; The light-receiving surface of the above-mentioned light-receiving element and the light-emitting surface of the above-mentioned light-emitting element are located on substantially the same plane, wherein the above-mentioned light-receiving element has a first light-receiving part, a second light-receiving part, and a connecting part, and the connecting part connects the first light-receiving part and the light-emitting part. The second light receiving part is connected and thinner than the first light receiving part and the second light receiving part, and the hole of the light receiving element is formed in the connecting part.

According to a third aspect, the semiconductor device includes: a light receiving element having a hole formed substantially in the center; a light emitting element disposed in the hole of the light receiving element; a lead terminal disposed on the outer periphery of the light receiving element; and a first wire , it connects the first electrode provided on the light emitting surface of the above light emitting element with the above light receiving element connection; a second lead for connecting the second electrode of the light-emitting element to the lead terminal; and a resin for exposing the light-receiving surface of the light-receiving element and the first electrode of the light-emitting element, and connecting the light-emitting element, The light-receiving element, the lead terminal, and the second wire are sealed; the light-receiving element, the light-emitting element, and the lead terminal are held by the resin; on flat surface.

According to a fourth aspect, the semiconductor device includes: a light receiving element having a hole formed substantially in the center; a light emitting element disposed in the hole of the light receiving element; a flat mounting portion, and the light receiving element and the light emitting element are respectively bonded to the flat mounting portion with a conductive adhesive; lead terminals are provided along the outer periphery of the light receiving element and are formed by being separated from the lead frame; a first lead for connecting the electrode provided on the light emitting surface of the light emitting element to the first electrode of the light receiving element; a second lead for connecting the second electrode of the light receiving element to the lead terminal; and a resin for making The light-receiving surface of the light-receiving element and the light-emitting surface of the light-emitting element are exposed, and the periphery of the light-receiving element, the second lead, the lead terminal, and the lead frame are sealed; and the conductive adhesive The light receiving surface of the light receiving element mounted on the flat mounting portion and the light emitting surface of the light emitting element are located on substantially the same plane.

According to the present invention, by making the surface of the light-receiving element and the surface of the light-emitting element disposed in the hole formed in the light-receiving element substantially on the same plane, the distance between the object and the light-receiving element can be made equal to the distance between the object and the light-emitting element, And get a higher detection sensitivity.

1: Optocoupler

10: Substrate

20: Light-receiving chip

21, 31, 32: bonding wire

30: Luminous chip

31: Bonding wire

41, 51: Resin

101: Lead terminal

102: central part

103: Central recess

105: Installation Department

201: hole

202: concave part

203: The first light receiving part

204: The second light receiving part

FIG. 1 is a diagram schematically showing the shape of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram schematically showing the shape of the semiconductor device according to the first embodiment.

Fig. 3 is a diagram schematically showing the shape of a light-receiving chip according to the first embodiment.

FIG. 4 is a diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment.

FIG. 5 is a diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment.

FIG. 6 is a diagram schematically showing the shape of a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a diagram illustrating a method of manufacturing a semiconductor device according to the second embodiment.

FIG. 8 is a diagram illustrating a method of manufacturing a semiconductor device according to the second embodiment.

Fig. 9 is a diagram schematically showing the shape of a semiconductor device according to a third embodiment of the present invention.

Fig. 10 is a diagram illustrating a method of manufacturing a semiconductor device according to the third embodiment.

Fig. 11 is a diagram illustrating a method of manufacturing a semiconductor device according to the third embodiment.

Hereinafter, an embodiment for implementing the present invention will be described with reference to the drawings.

-First Embodiment-

1 to 3 are diagrams schematically showing an example of a photocoupler 1 as a semiconductor device according to a first embodiment of the present invention. Figure 1(a) is a top perspective view, Figure 1(b) is a top perspective view of the situation where the resin is removed from Figure 1(a), Figure 2(a) is A-A' and B- in Figure 1(a) B' section view, Fig. 2(b) is a front top view, and Fig. 2(c) is a back top view. However, in FIG. 2( a ), the region of the A'-B cross section is omitted from illustration. Fig. 3 is a perspective view of a light-receiving chip described later. In addition, for convenience of explanation, a coordinate system composed of an X axis, a Y axis, and a Z axis set as shown in the figure is used.

In addition, as the semiconductor device, the photocoupler 1 is taken as an example for the following description, but the semiconductor device is not limited to the photocoupler 1, and may be a photoelectric microsensor or a mark sensor.

The photocoupler 1 is a light-emitting chip 30 with a light-emitting element and a receiving element with a light-receiving element. The optical chip 20 constitutes an integrated planar photocoupler. In FIG. 1 , both the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are the upper surface (+ side in the Z-axis direction). The photocoupler 1 of this embodiment is suitable for an optical encoder, and the light emitted from the light-emitting element is emitted in a direction perpendicular to the reflection surface, that is, substantially parallel to the Z-axis direction. An object to be measured (not shown) is arranged outside the photocoupler 1 in the Z-axis direction, and the photocoupler 1 is configured to receive light reflected from the object to be measured by a light receiving element.

The photocoupler 1 includes a substrate 10 , a light emitting chip 30 , a light receiving chip 20 , lead terminals 101 , and a resin 51 .

The light-receiving chip 20 has a plurality of light-receiving elements (photodiodes: PD) inside, and has a rectangular shape in plan view. In addition, the light-receiving chip 20 may be configured as a phototransistor combining a PD and a transistor, or may be configured as a PDIC including a PD and an integrated circuit constituting a circuit for driving the PD. As shown in FIG. 3 , a hole 201 is formed in a predetermined region including the center on the upper surface of the light receiving chip 20 . In this hole 201, the central recessed part 103 (refer FIG. 2) of the board|substrate 10 mentioned later is accommodated. In addition, the light-receiving chip 20 includes a hole 201, and a thin connection portion 202 is formed in a region along the X-axis direction of the figure (see FIG. 3 ). The light-receiving chip 20 includes a first light-receiving portion 203 (+ side in the Y-axis direction in the figure) and a second light-receiving portion 204 (- side in the Y-axis direction in the figure) with the connection portion 202 interposed therebetween. The upper surface (the surface on the + side in the Z-axis direction) of the connecting portion 202 is formed by being recessed from the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204 . That is, the upper surface of the connecting portion 202 is disposed at a position lower on the + side in the Z-axis direction than the upper surfaces of the first light receiving portion 203 and the second light receiving portion 204 .

As shown in FIG. 2 , the substrate 10 is formed of, for example, a lead frame, and has a central portion 102 provided above the connection portion 202 of the above-mentioned light receiving chip 20 . In the central portion 102 of the substrate 10 , a central concave portion (light-emitting element accommodating portion) 103 is formed corresponding to the area where the hole 201 of the light-receiving chip 20 is formed. As mentioned above, the central concave portion 103 is accommodated in the hole 201 of the light receiving chip 20 . The lead terminals 101 are arranged along the outer circumference of the first light receiving portion 203 and the second light receiving portion 204 of the light receiving chip 20 . As will be described later, the lead terminal 101 is initially formed integrally with the substrate 10 to form a lead frame. The lead part of the connection part is cut and separated from the substrate 10 to form. The upper surface (the Z-axis direction + side surface) of the central portion 102 is substantially flush with the upper surface of the first light receiving unit 203 and the upper surface of the second light receiving unit 204 . The first light receiving part 203 and the second light receiving part 204 of the light receiving chip 20 are connected to the lead terminal 101 by the bonding wire 21 . The bottom surface 103a of the concave portion of the central concave portion 103 of the substrate 10 is formed so that the bottom surface 103a of the concave portion is lower than the upper surface of the central portion 102 (Z-axis direction - side in the figure). On the bottom surface 103a of the central concave portion 103, the light emitting chip 30 is disposed.

The light-emitting chip 30 has a light-emitting element, and is disposed on the bottom surface 103a of the central concave portion 103 formed in the central portion 102 of the above-mentioned substrate 10 . The light-emitting chip 30 is electrically bonded to the substrate 10 by, for example, silver glue or a conductive adhesive such as solder. Thereby, one electrode of the light emitting chip 30 , for example, the cathode electrode, is connected to the substrate 10 . The upper surface of the light-emitting chip 30 , namely the light-emitting surface, and the upper surface of the light-receiving chip 20 , namely the light-receiving surface, are aligned at substantially the same height, that is, aligned at substantially the same position in the Z-axis direction. Specifically, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is set to a range of preferably 30 μm or less, more preferably 10 μm or less. In this specification, the range in which the difference in Z-axis direction between the upper surface of the light emitting chip 30 and the upper surface of the light receiving chip 20 is 30 μm or less is defined as being substantially the same. In other words, the central concave portion 103 is formed such that the bottom surface 103 a of the central concave portion 103 of the substrate 10 is at a position lower than the upper surface of the central portion 102 in the Z-axis direction of the light-emitting chip 30 .

Other electrodes of the light-emitting chip 30 , such as an anode electrode, are connected to the light-receiving chip 20 (in the example shown in the figure, the first light-receiving portion 203 ) by bonding wires 31 .

As shown in FIG. 2( a ), the central portion 102 of the substrate 10 has a concave portion 102 a on the lower surface side, that is, on the side in the Z-axis direction. In the concave portion 102a of the central portion 102 of the substrate 10, the connection portion 202 of the light-receiving chip 20 is housed. The connection portion 202 of the light-receiving chip 20 is sealed with the resin 41 in a state of being housed in the concave portion 120 a of the central portion 102 of the substrate 10 . On the upper part of the photocoupler 1 (Z-axis direction + side), the peripheral part of the light-receiving chip 20 and the part of the lead terminal 101 of the peripheral part of the substrate 10 (that is, the part other than the back surface (Z-axis-side surface)) , and bonding wire 21 are sealed by resin 51 . In addition, resin 41 and resin 51 For example, it is an opaque resin having light-shielding properties such as epoxy resin.

Referring to FIG. 4 and FIG. 5 , a method of manufacturing the above-mentioned photocoupler 1 will be described. Fig. 4 and Fig. 5 are the same as Fig. 2(a) and are AA' and BB' cross-sectional views in Fig. 1(a). In this case, the area of the A'-B cross-section is also omitted from the illustration.

As shown in FIG. 4( a ), on a thin support substrate 60 such as metal or back tape, the substrate 10 formed with a plurality of lead terminals 101 , the central portion 102 , and the central concave portion 103 , and the light-receiving chip 20 are mounted. In addition, the base material forming the substrate 10 has a size such that a plurality of photocouplers 1 can be obtained, but only a region of one photocoupler 1 and its surroundings are shown in the drawings. The light-receiving chip 20 is mounted in such a manner that the connecting portion 202 is disposed in the concave portion 102 a of the central portion 102 of the substrate 10 . At this time, the height of the Z-axis direction-side surface of the concave portion 102 a of the central portion 102 of the substrate 10 is set in advance so as to form a gap g between the Z-axis direction +-side surface of the connecting portion with the light-receiving chip 20 . In addition, the substrate 10 is prepared in advance with a thick plate-shaped base material capable of forming the central concave portion 103 , and a part of the base material is removed by etching to form the concave portion 102 a and the central concave portion 103 . Also, in this state, the central portion 102 and the plurality of lead terminals 101 of the substrate 10 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery of the substrate 10, and the central portion 102 and each lead terminal 101 are formed by forming The lead part 102b of the lead frame is connected to the lead frame.

It seals with resin 41 so that the light receiving chip 20 and the board|substrate 10 may be covered. At this time, the connection portion 202 of the light-receiving chip 20 is filled with the resin in the concave portion 102a provided in the central portion 102 of the substrate 10, including the gap portion with the central portion 102 of the substrate 10, and the entire circumference is covered. Side seals. After hardening the resin 41, the support base material 60 is peeled off and removed, and the intermediate product 1A is produced (FIG.4(b)). In addition, depending on the metal used in the support substrate 60, it may also be removed by dissolution. The up-down direction of intermediate product 1A is reversed, and light-receiving chip 20 and lead terminal 101 are bonded and connected by bonding wire 21 ( FIG. 4( c )). Seal with resin 51 in such a way as to cover the peripheral portion of the light-receiving chip 20, a portion of the lead terminal 101 of the peripheral portion of the substrate 10 (that is, the portion other than the back surface (Z-axis-side surface)), and the bonding wire 21 (Fig. 4(d)).

On the bottom surface 103a of the central concave portion 103 formed in the central portion 102 of the substrate 10, the light-emitting chip 30 is connected, for example, by die bonding using an adhesive such as silver glue ( FIG. 5( a )). The electrodes of the light-emitting chip 30 and the electrodes of the light-receiving chip 20 are bonded and connected by bonding wires 31 ( FIG. 5( b )). Thereafter, the central portion 102 of the connection board 10 and the lead portion 102b of each lead terminal 101 are cut together with the resin 51 at the positions indicated by chain lines in FIG. Thereby, the photocoupler 1 shown in FIG. 1 is obtained.

According to the first embodiment described above, the following effects can be obtained.

(1) The photocoupler 1 has: a light-receiving chip 20, which has a hole 201 formed in a predetermined area; a light-emitting chip 30, which is arranged in the central recess 103 of the lead frame; and a resin 51, which covers the peripheral portion of the light-receiving chip 20; And the surface of the light-receiving chip 20 and the surface of the light-emitting chip 30 are located on substantially the same plane. Thereby, the moving distance until the light emitted from the light-emitting chip 30 is reflected by the object and the moving distance until the light reflected by the object enters the light-receiving chip 20 can be substantially equal. Thereby, the detection accuracy can be improved, and the high sensitivity of the sensor can be realized.

In addition, compared with the case where a light emitting chip is mounted on a light receiving chip and connected with a bonding wire, the size in the Z-axis direction can be reduced, so that miniaturization and thinning of the photocoupler 1 can be achieved.

Also, in the prior art disclosed in Japanese Patent Application Laid-Open No. 58-148954, the angle formed between the side surface and the bottom surface of the hole formed on the main surface of the transistor is set to a predetermined value, and the angle reflected by the side surface Light is also received by the light receiving element. However, the light-receiving element is formed by silicon, and the light-emitting element accommodation hole of the light-receiving element is formed by anisotropic etching of silicon. Therefore, since the inclination angle formed by the peripheral side surface to be the reflective surface with respect to the bottom surface is set at a predetermined angle of 53.7°, it is difficult to apply it outside of specific applications and the versatility is low. On the other hand, this embodiment does not receive the light reflected from the side surface of the structure by the light-receiving chip 20, so it can be used for other than specific purposes, and can provide a highly versatile semiconductor device.

(2) The substrate 10 has a central concave portion 103 as a light-emitting element housing portion where the light-emitting chip 30 is placed, and the central concave portion 103 is arranged in the hole 201 of the light-receiving chip 20 . In this way, the light-emitting chip 30 can be set Placed on the central concave portion 103 of the substrate 10, the heat dissipation can be improved.

(3) The light-receiving chip 20 has a first light-receiving part 203, a second light-receiving part 204, and a connection part 202. The connection part 202 connects the first light-receiving part 203 and the second light-receiving part 204, and is thinner than the first light-receiving part. 203 and the second light receiving part 204, and the hole 201 is provided in the connecting part 202. Thereby, the light-emitting chip 30 can be placed on the substrate 10 with the surface of the light-receiving chip 20 and the surface of the light-emitting chip 30 being substantially on the same plane, thereby improving detection accuracy and heat dissipation.

(4) The substrate 10 has a concave portion 102 a for accommodating the connecting portion 202 of the light-receiving chip 20 , and the resin 41 is filled in the concave portion 102 a for accommodating the connecting portion 202 . The resin 41 is also filled in the gap g between the substrate 10 and the light-receiving chip 20 . Thereby, higher impact can be obtained.

-Second Embodiment-

A photocoupler according to a second embodiment of the present invention will be described. In the following description, the same code|symbol is attached|subjected to the same component as 1st Embodiment, and a different point is mainly demonstrated. Points not particularly described are the same as those of the first embodiment.

Fig. 6 is a diagram illustrating a photocoupler 1 according to a second embodiment of the present invention, Fig. 6(a) is a sectional view, Fig. 6(b) is a front top view, and Fig. 6(c) is a back top view. In addition, Fig. 6(a) is a CC' sectional view in Fig. 6(b).

The light-receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined area including the center. The light-receiving chip 20 is connected to a plurality of lead terminals 101 composed of a lead frame or the like by bonding wires 21 at the peripheral portion of the photocoupler 1 . The light emitting chip 30 is disposed in the hole 201 . Thereby, the upper surface of the light-emitting chip 30 , which is the light-emitting surface, and the upper surface of the light-receiving chip 20 , which is the light-receiving surface, are aligned at substantially the same height, that is, aligned at substantially the same position in the Z-axis direction. In the second embodiment, as in the case of the first embodiment, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is set to a range of preferably 30 μm or less, more preferably 10 μm or less. range. In addition, in this embodiment, the difference in height between the light emitting surface of the light emitting chip 30 and the light receiving surface of the light receiving chip 20 can be set to be several μm or less. range.

The light-emitting chip 30 is connected to the light-receiving chip 20 through the bonding wire 31 , and connected to the lead terminal 101 through the bonding wire 32 . Thereby, one electrode of the light-emitting chip 30 , such as the cathode electrode, is electrically connected to the lead terminal 101 , and the other electrode, such as the anode electrode, is electrically connected to the light-receiving chip 20 .

In the state where the light-emitting chip 30 is set in the hole 201 of the light-receiving chip 20, the light-receiving chip 20, a part of the lead terminal 101 (that is, the part other than the back surface (Z-axis-side surface)), the light-emitting chip 30, and the joint The wire 32 is sealed with a resin 41 at the lower part (Z-axis direction-side) of the photocoupler 1 . On the upper portion of the photocoupler 1 (Z-axis direction + side), the peripheral portion of the light receiving chip 20 , the lead terminals 101 , and the bonding wires 21 are sealed with a resin 51 . In addition, the resin 41 and the resin 51 are, for example, opaque resins having light-shielding properties such as epoxy resins.

Referring to FIG. 7 and FIG. 8, a method of manufacturing the photocoupler 1 according to the second embodiment described above will be described. Fig. 7 and Fig. 8 are the same as Fig. 6(a), and are CC' sectional views in Fig. 6(b).

As shown in FIG. 7( a ), on a support substrate 60 , a plurality of lead terminals 101 , a light receiving chip 20 , and a light emitting chip 30 are mounted. In addition, the base material forming the lead terminal 101 has a size such that a plurality of photocouplers 1 can be obtained, but in the drawings, only the region to be one photocoupler 1 and its surroundings are shown. The light emitting chip 30 is mounted on the support base 60 through the hole 201 formed in the light receiving chip 20 . In this state, the plurality of lead terminals 101 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery, and each lead terminal 101 is connected to the lead frame by a lead portion 102b formed on the lead frame.

The light-emitting chip 30 and the lead terminal 101 are bonded and connected by bonding wires 32 ( FIG. 7( b )). Seal with resin 41 in such a way as to cover light-receiving chip 20 , a part of lead terminal 101 (that is, the part other than the back surface (the Z-axis direction-side surface)), light-emitting chip 30 , and bonding wire 32 , and harden resin 41 , the supporting base material 60 is peeled off to produce an intermediate product 1A ( FIG. 7( c )). The up-down direction of intermediate product 1A is reversed, and light-receiving chip 20 and lead terminal 101 are bonded and connected by bonding wire 21 ( FIG. 8( a )). To cover the peripheral portion of the light-receiving chip 20, the lead terminals 101, and the bonding The form of the wire 21 is sealed with a resin 51 (FIG. 8(b)). The electrodes of the light-emitting chip 30 and the electrodes of the light-receiving chip 20 are bonded and connected by bonding wires 31 ( FIG. 8( b )).

Thereafter, the lead portion 102b connecting each lead terminal 101 is cut together with the resin 51 at the position shown by the dot chain line in FIG. 8(c) to be separated into individual pieces. Thereby, the photocoupler 1 shown in FIG. 6 is obtained.

According to the above-mentioned second embodiment, in addition to the effect of (1) obtained by the first embodiment, the following effects can also be obtained.

(1) The light-receiving chip 20 , the light-emitting chip 30 , a part of the lead terminal 101 , and the bonding wire 32 are sealed with the resin 41 from the back surface. In this way, the upper surfaces of the light-receiving chip 20 and the light-emitting chip 30 are covered by the resins 41 and 51 , so higher impact resistance can be obtained. In addition, since the lead terminal 101 is sealed with the resin 41, 51 in an L-shape, it can be made into a shape that is resistant to resin shedding.

(2) As shown in Figures 7 and 8, during manufacture, the upper surface of the light-receiving chip 20 and the upper surface of the light-emitting chip 30 are installed on the support substrate 60, so that the light-receiving chip 20 of the photocoupler 1 can The surface is located on the same plane as the upper surface of the light-emitting wafer 30 with high precision.

-Third Embodiment-

A photocoupler according to a third embodiment of the present invention will be described. In the following description, the same code|symbol is attached|subjected to the same component as 1st Embodiment, and a different point is mainly demonstrated. About the point which is not demonstrated especially, it is the same as 1st Embodiment.

Fig. 9 is a diagram illustrating a photocoupler 1 according to a third embodiment of the present invention, Fig. 9(a) is a sectional view, Fig. 9(b) is a front plan view, and Fig. 9(c) is a back plan view. In addition, Fig. 9(a) is a sectional view of DD' in Fig. 9(b).

The light-receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined area including the center. The light receiving chip 20 and the light emitting chip 30 are mounted on the substrate 10 . The light emitting chip 30 is mounted on the substrate 10 through the hole 201 formed in the light receiving chip 20 . In this way, the light-emitting chip 30, for example, by silver paste or solder A conductive adhesive such as material is bonded to the substrate 10 , whereby an electrode (eg, a cathode electrode) is electrically connected to the substrate 10 . The upper surface of the light-emitting chip 30 , the light-emitting surface, and the upper surface of the light-receiving chip 20 , the light-receiving surface, are aligned at substantially the same height, that is, aligned at substantially the same position in the Z-axis direction. In the third embodiment, as in the case of the first embodiment, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is set to a range of preferably 30 μm or less, more preferably 10 μm or less. range.

Another electrode of the light-emitting chip 30 , such as an anode electrode, is connected to the light-receiving chip 20 through a bonding wire 31 .

The board|substrate 10 is comprised, for example by a lead frame etc., and has the mounting part 105 which mounts the light receiving chip 20 and the light emitting chip 30 as mentioned above, and the several lead terminal 101 provided in the peripheral part. The lead terminals 101 and the light receiving chip 20 are connected by bonding wires 21 .

The light-receiving chip 20, the peripheral portion of the substrate 10 (that is, a part of the mounting part 105, and a part of the lead terminal 101 (that is, the part except the back surface (Z-axis-side surface))), and the bonding wire 21 are connected to the photocoupler 1 The upper part (Z-axis direction + side) is sealed with resin 51 . In addition, the resin 51 is, for example, an opaque resin having light-shielding properties such as epoxy resin.

Referring to FIG. 10 and FIG. 11, a method of manufacturing the photocoupler 1 according to the third embodiment described above will be described. Fig. 10 and Fig. 11 are the same as Fig. 9(a), and are sectional views of DD' in Fig. 9(b).

As shown in FIG. 10( a ), the substrate 10 in which a plurality of lead terminals 101 and mounting portions 105 are formed is mounted on a supporting base material 60 . In addition, the base material forming the substrate 10 has a size such that a plurality of photocouplers 1 can be obtained, but only the region where one photocoupler 1 becomes and its surroundings are shown in the drawings. On the mounting portion 105 of the substrate 10, the light-receiving chip 20 is connected, for example, by a grain bonding method using an adhesive such as silver glue.

The light-receiving chip 20 and the lead terminal 101 are bonded and connected by bonding wires 21 ( FIG. 10( b )). The light-receiving chip 20, the peripheral portion of the substrate 10, and the bonding wire 21 are sealed with a resin 51, and after the resin 51 is cured, the support base 60 is peeled off and removed (FIG. 10(c)). Pass the light-emitting chip 30 through the hole 201 formed in the light-receiving chip 20, and connect to the mounting portion 105 of the substrate 10 by, for example, bonding with an adhesive such as silver glue ( FIG. 11( a )). Use the bonding wire 31 to connect the electricity of the light-emitting chip 30 The electrodes are bonded and connected to the electrodes of the light-receiving chip 20 ( FIG. 11( a )). Thereafter, the resin 51 is cut and separated into individual pieces at the positions indicated by chain lines in FIG. 11( b ). Thereby, the photocoupler 1 shown in FIG. 9 is obtained.

According to the above-mentioned third embodiment, in addition to the effect of (1) obtained by the first embodiment, the following effects can also be obtained.

The substrate 10 has a mounting portion 105 for holding the light-receiving chip 20 and the light-emitting chip 30 . Thereby, the light-emitting chip 30 can be disposed on the substrate 10, so the heat dissipation can be improved.

As long as the characteristics of the present invention are not impaired, the present invention is not limited to the above embodiments, and other forms considered within the scope of the technical idea of the present invention are also included in the scope of the present invention.

The disclosure content of the following priority basic application is incorporated herein as a reference.

Japanese Patent Application 2018 No. 012842 (filed on January 29, 2018)

1‧‧‧Optocoupler

10‧‧‧substrate

20‧‧‧light receiving chip

30‧‧‧Light-emitting chips

31‧‧‧Joint wire

51‧‧‧Resin

101‧‧‧Lead terminal

102‧‧‧Central Department

203‧‧‧The first light receiving part

204‧‧‧The second light receiving part

Claims (9)

A semiconductor device comprising: a light receiving element having a hole formed in a predetermined area; a lead frame having a light emitting element housing portion formed with a concave portion, the light emitting element housing portion being accommodated in the hole of the light receiving element; a light emitting element , which is provided on the bottom inner surface of the above-mentioned light-emitting element housing part of the above-mentioned lead frame; a lead terminal, which is provided along the outer periphery of the above-mentioned light-receiving element, and is formed by being separated from the above-mentioned lead frame; and a first resin that covers the above-mentioned light-receiving element The peripheral portion of the light-emitting element; the light-emitting element is bonded to the bottom inner surface of the light-emitting element housing portion of the lead frame with a conductive adhesive; and the light-receiving surface of the light-receiving element and the light-emitting surface of the light-emitting element are located on substantially the same plane . The semiconductor device according to claim 1, wherein each of the light receiving elements has a first light receiving part, a second light receiving part, and a connecting part, and the connecting part connects the first light receiving part and the second light receiving part; the lead wire The frame exposes the upper surface which is the light receiving surface of the first light receiving part and the second light receiving part, and is provided so as to cover the upper surface of the connecting part. The semiconductor device according to claim 2, wherein the lead frame has a concave portion for accommodating the connecting portion of the light receiving element. A semiconductor device comprising: a light-receiving element having a hole formed in a predetermined region; a light-emitting element disposed in the hole of the light-receiving element; and a first resin covering the peripheral portion of the light-receiving element; the light-receiving element The light-receiving surface and the light-emitting surface of the above-mentioned light-emitting element are located on substantially the same plane, Wherein, the light receiving element has a first light receiving part, a second light receiving part, and a connecting part, and the connecting part connects the first light receiving part and the second light receiving part, and is thinner than the first light receiving part and the second light receiving part. A light receiving part, wherein the hole of the light receiving element is formed in the connecting part. The semiconductor device according to claim 4, further comprising: a substrate having a recess for accommodating the connecting portion of the light receiving element, and filling the recess for accommodating the light receiving element with a second resin. The semiconductor device according to claim 5, wherein the second resin is also filled in a gap between the substrate and the light receiving element. A semiconductor device comprising: a light-receiving element having a hole formed substantially in the center; a light-emitting element disposed in the hole of the light-receiving element; lead terminals disposed on the outer periphery of the light-receiving element; and a first wire connecting The first electrode provided on the light emitting surface of the light emitting element is connected to the light receiving element; the second lead is used to connect the second electrode of the light emitting element to the lead terminal; and the resin is used to connect the light receiving surface of the light receiving element to the above The above-mentioned first electrode of the light-emitting element is exposed, and the above-mentioned light-emitting element, the above-mentioned light-receiving element, the above-mentioned lead terminal, and the above-mentioned second wire are sealed; the above-mentioned light-receiving element, the above-mentioned light-emitting element, and the above-mentioned lead terminal are held by the above-mentioned resin; and the above-mentioned light-receiving element The light receiving surface and the light emitting surface of the light emitting element are located on substantially the same plane. A semiconductor device comprising: a light-receiving element having a hole formed substantially in the center; a light-emitting element disposed in the hole of the light-receiving element; A lead frame having a flat mounting portion on which the light-receiving element and the light-emitting element are respectively mounted, and the light-receiving element and the light-emitting element are respectively bonded to the flat mounting portion with a conductive adhesive; a lead terminal along the above-mentioned The outer periphery of the light-receiving element is provided and separated from the above-mentioned lead frame; the first wire connects the electrode provided on the light-emitting surface of the above-mentioned light-emitting element to the first electrode of the above-mentioned light-receiving element; the second wire connects the above-mentioned light-receiving element the second electrode of the above-mentioned lead terminal; The peripheral portion of the lead frame is sealed; and the light receiving surface of the light receiving element mounted on the flat mounting portion with the conductive adhesive is substantially on the same plane as the light emitting surface of the light emitting element. The semiconductor device according to any one of claims 1 to 8, wherein a difference in height between the light receiving surface of the light receiving element and the light emitting surface of the light emitting element is within 10 μm.

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