TWI784485B - High accuracy die bonding system, alignment system and method thereof - Google Patents
High accuracy die bonding system, alignment system and method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
Description
一種高精度黏晶系統、對位系統及其方法,尤指一種能夠提升潔淨度與黏晶精度的系統與方法。 A high-precision die bonding system, alignment system and method thereof, especially a system and method capable of improving cleanliness and die bonding precision.
現有的黏晶技術係利用真空吸取裝置吸取至少一晶粒,再將所吸取的晶粒移動至一所欲黏合的位置處,如晶圓、晶粒、載板。真空吸取裝置再將晶粒黏合於所欲黏合的位置處。 The existing die bonding technology uses a vacuum suction device to suck at least one die, and then moves the sucked die to a desired bonding position, such as a wafer, a die, and a carrier. The vacuum suction device then bonds the die to the desired bonding position.
然真空吸取裝置係於吸取晶粒處至所欲黏合的位置處進行長距離的位移。對於要求潔淨度的黏晶製程而言,該長距離的位移會因裝置與裝置之間的摩擦而產生有微塵,該微塵恐會損及潔淨度。 However, the vacuum suction device performs a long-distance displacement from the position where the crystal grain is sucked to the position to be bonded. For the die-bonding process that requires cleanliness, the long-distance displacement will generate fine dust due to friction between devices, and the fine dust may damage the cleanliness.
如上所述,如何提升潔淨度,或者縮短真空吸取裝置的移動距離,或者改變真空吸取裝置的位置,其就有可改善的空間。 As mentioned above, how to improve the cleanliness, or shorten the moving distance of the vacuum suction device, or change the position of the vacuum suction device, there is room for improvement.
有鑑於此,本發明主要目的在於,提出一種本發明提出一種高精度黏晶系統、對位系統及其方法,其係避免系統的位移裝置於晶圓或晶粒上方動作,藉以提升潔淨度的目的。 In view of this, the main purpose of the present invention is to propose a high-precision die-bonding system, alignment system and method thereof, which prevent the displacement device of the system from moving above the wafer or die, thereby improving cleanliness Purpose.
本發明為達成上述目的提供一種高精度黏晶系統,包括:一供應單元,用來設置一晶粒;一承接單元,相鄰於該供應單元;一中繼單元,設於該供應單元與該承接單元之間;一吸取單元,設於該供應單元的上方,該吸取單元將該晶粒放置於該中繼單元;以及一黏 合總成,設於該承接單元的上方;其中,該黏合總成係將位於該中繼單元之該晶粒放置於該承接單元。 To achieve the above object, the present invention provides a high-precision die bonding system, including: a supply unit for setting a die; a receiving unit adjacent to the supply unit; a relay unit arranged between the supply unit and the supply unit Between the receiving units; a suction unit, arranged above the supply unit, the suction unit places the die on the relay unit; and an adhesive An assembly is arranged above the receiving unit; wherein, the bonding assembly places the die located in the relay unit on the receiving unit.
綜合上述,本發明之高精度黏晶系統及其方法,其係將系統的位移裝置設於供應單元或承接單元的非正上方或下方,故第一中繼台或第二中繼台移動時,其所可能產生的微塵係無法掉落於供應單元或承接單元,藉以提升潔淨度。至於真空模組,由於只有上下的運動,並無側向移位運動或僅微小的向移位,只要以隔離板做適當隔離,即可防止微塵由上方掉落至承接單元。 To sum up the above, the high-precision die bonding system and method of the present invention set the displacement device of the system not directly above or below the supply unit or the receiving unit, so when the first relay station or the second relay station moves , the dust that may be generated cannot fall on the supply unit or the receiving unit, so as to improve the cleanliness. As for the vacuum module, since it only moves up and down, there is no lateral displacement or only a slight displacement. As long as the isolation plate is properly isolated, dust can be prevented from falling from above to the receiving unit.
10、10A、10B:供應單元 10, 10A, 10B: supply unit
100、100A:供應台 100, 100A: supply table
101、101A:頂針 101, 101A: thimble
11、11A、11B:吸取單元 11, 11A, 11B: suction unit
110、110A、110B:真空模組 110, 110A, 110B: vacuum module
111、111A、111B:吸取位移模組 111, 111A, 111B: absorption displacement module
12、12A、12B:承接單元 12, 12A, 12B: receiving unit
120:承台 120: platform
13、13A、13B:中繼單元 13, 13A, 13B: relay unit
130、130A、130B:位移模組 130, 130A, 130B: displacement module
131、131A、131B:第一中繼台 131, 131A, 131B: the first relay station
132、132B:第二中繼台 132, 132B: the second relay station
14、14A、14B:第一黏合單元 14, 14A, 14B: the first bonding unit
140、140A:第一真空模組 140, 140A: the first vacuum module
141:第一透明模組 141: The first transparent module
15、15A、15B:第二黏合單元 15, 15A, 15B: the second bonding unit
150、150A:第二真空模組 150, 150A: Second vacuum module
151:第二透明模組 151:Second transparent module
154:隔離板 154: Isolation board
16、16A、16B:第一上視覺單元 16, 16A, 16B: the first upper visual unit
17、17A、17B:第二上視覺單元 17, 17A, 17B: the second upper visual unit
18、18A、18B:第三上視覺單元 18, 18A, 18B: the third upper visual unit
19、19A、19B:下視覺單元 19, 19A, 19B: lower visual unit
20、20A、20B、30:晶粒 20, 20A, 20B, 30: grain
200、300:晶粒記號 200, 300: Grain mark
301:透明區 301: transparent area
21、31:欲黏合件 21, 31: parts to be bonded
210、310:黏合記號 210, 310: Adhesive mark
S1~S7:步驟 S1~S7: steps
40:上視覺單元 40: Upper Vision Unit
41:黏合單元 41: Bonding unit
410:真空模組 410: Vacuum module
411:透明模組 411: Transparent module
42:承接單元 42: Undertaking unit
420:承台 420: platform
43:下視覺單元 43: Lower visual unit
第1圖為本發明第一實施例之一種高精度黏晶系統之示意圖。 Fig. 1 is a schematic diagram of a high-precision die-bonding system according to the first embodiment of the present invention.
第2圖為本發明第一實施例之一種高精度黏晶系統之局部示意圖。 Fig. 2 is a partial schematic diagram of a high-precision die-bonding system according to the first embodiment of the present invention.
第3圖為本發明第二實施例之一種高精度黏晶方法之流程示意圖。 FIG. 3 is a schematic flow chart of a high-precision die-bonding method according to the second embodiment of the present invention.
第4圖為一黏合記號與一晶粒記號之對位示意圖。 FIG. 4 is a schematic diagram of alignment between an adhesive mark and a die mark.
第5圖為本發明第三實施例之一種高精度黏晶系統之示意圖。 Fig. 5 is a schematic diagram of a high-precision die-bonding system according to the third embodiment of the present invention.
第6圖為本發明第三實施例之一種高精度黏晶系統之局部示意圖。 Fig. 6 is a partial schematic diagram of a high-precision die-bonding system according to the third embodiment of the present invention.
第7圖為本發明第四實施例之一種高精度黏晶系統之示意圖。 Fig. 7 is a schematic diagram of a high-precision die-bonding system according to the fourth embodiment of the present invention.
第8圖為本發明第四實施例之一種高精度黏晶系統之局部示意圖。 Fig. 8 is a partial schematic diagram of a high-precision die-bonding system according to the fourth embodiment of the present invention.
第9圖為本發明第五實施例之一種用於高精度黏晶之對位系統。 Fig. 9 is an alignment system for high-precision die bonding according to the fifth embodiment of the present invention.
本發明第一實施例係一種高精度黏晶系統,如第1圖與第2圖所示,高精度黏晶系統具有一供應單元10、一吸取單元11、一承接單元12、一中繼單元13、一黏合總成、一第一上視覺單元16、一第二上視覺單元17、一第三上視覺單元18與一下視覺單元19。
The first embodiment of the present invention is a high-precision die-bonding system. As shown in Figures 1 and 2, the high-precision die-bonding system has a
供應單元10具有一供應台100與至少一頂針101。供應台100用來設置至少一晶粒20。頂針101係設於供應台100的下方,頂針101可為單一或複數個。若為單一頂針101,頂針101係頂出設置於供應台100的單一晶粒20。若為複數個頂針101,頂針101係頂出設於供應台100的複數個晶粒20。該供應台100可進行一橫向移動、一前後移動或一橫向與前後移動。
The
吸取單元11具有至少一真空模組110與一吸取位移模組111。真空模組110係設於吸取位移模組111的一側,並且位於供應單元10的上方。吸取位移模組111可進行一橫向移動、一前後移動或一縱向移動。
The
承接單元12係相鄰於供應單元10。承接單元12具有一承台120,承台120可為透明或部份透明以利影像的穿透與擷取。承台120可進行一橫向移動、一前後移動或一橫向與前後移動。承台120係供一欲黏合件21設置,該欲黏合件21為透明,並具有黏合記號210。該欲黏合件21為晶圓、晶粒、載板。
The receiving
中繼單元13係位於供應單元10與承接單元12之間。中繼單元具有一位移模組130、一第一中繼台131與一第二中繼台132。第一中繼台131與第二中繼台132係設於位移模組130的兩相對端。於本實施例之中繼單元13為一雙翼設計。該位移模組130可進行一前後移動、一橫向移動或一旋轉移動。第一中繼台131與第二中繼台132係呈一平行排列。
The
黏合總成包含有一第一黏合單元14與第二黏合單元15。第一黏合單元14係位於承接單元12的上方。第一黏合單元14具有至少一第
一真空模組140。第一真空模組140具有一第一透明模組141。第一透明模組141可為一透明體或一穿孔。
The bonding assembly includes a
第二黏合單元15係位於承接單元12的上方,並且相鄰於第一黏合單元14。第二黏合單元15具有至少一第二真空模組150。第二真空模組150具有至少一第二透明模組151。第二透明模組151可為一透明體或一穿孔。本發明之黏合總成的第一黏合單元14與第二黏合單元是15不動或不做大行程移動,可裝置隔離板154,故可減少污染。
The
第一上視覺單元16係設於吸取單元11與供應台100的上方。若更進一步論述,第一上視覺單元16係位於真空模組110的上方。第一上視覺單元16可具有至少一視覺模組。
The first
第二上視覺單元17係設於中繼單元13的上方。若更進一步論述,第二上視覺單元17係位於第一中繼台131或第二中繼台132的上方,並且相鄰於供應單元10。第二上視覺單元17可具有至少一視覺模組。
The second
第三上視覺單元18係位於第一黏合單元14與第二黏合單元15的上方。第三上視覺單元18具有至少一視覺模組,各視覺模組係位於第二真空模組150或第一真空模組140的上方。
The third upper
下視覺單元19係位於承接單元12的下方。若更進一步論述,下視覺單元19具有至少一視覺模組。下視覺單元19係位於承台120的下方。若第一上視覺單元16、第二上視覺單元17、第三上視覺單元18與下視覺單元19使用紅外線感測相機,晶粒與欲黏合件不一定要有透明區,只要是矽材質或是紅外線可以穿透的材料,一樣可以取像與對位。
The
本發明第二實施例係一種高精度黏晶方法,如第3圖所示。 The second embodiment of the present invention is a high-precision die bonding method, as shown in FIG. 3 .
步驟S1,提供至少一晶粒。如第1圖與第2圖所示,頂針101頂出位於供應台100所欲頂出之晶粒20。第一上視覺單元16係擷取被頂出之晶粒20的影像資訊,並將該影像資訊傳送給吸取單元20。吸取單元11之真空模組110依據影像資訊,以吸取晶粒20。真空模組110係吸取至少一晶粒20或複數個晶粒20。
Step S1, providing at least one die. As shown in FIG. 1 and FIG. 2 , the
若更進一步論述,供應單元10之供應台100係進行一前後位移、一橫向位移或一橫向與前後移動,以將欲被吸取之晶粒20移動至真空模組110的下方。
To discuss further, the supply table 100 of the
待欲被吸取之晶粒20移動真空模組110的下方後,第一上視覺單元16係擷取所欲頂出之晶粒20的影像資訊,頂針101依據該影像資訊,以頂出晶粒20。
After the die 20 to be sucked moves below the
第一上視覺單元16係擷取被頂出之晶粒20的影像資訊,並將該影像資訊傳送給吸取單元20。吸取單元11之真空模組110依據影像資訊,以吸取晶粒20。
The first
步驟S2,將至少一晶粒轉移至一中繼單元。吸取位移模組111係將吸取有晶粒20之真空模組110移動至中繼單元13之第一中繼台131的上方。
Step S2, transferring at least one die to a relay unit. The
第二上視覺單元17係擷取晶粒20與中繼單元13之第一中繼台131的影像資訊,並將影像資訊傳送給吸取單元11,以使真空模組110將晶粒20放置於第一中繼台131。
The second
待真空模組110將晶粒20放置於第一中繼台131後,吸取位移模組111係將真空模組110移回至最初位置,以再次吸取晶粒20。
After the
位移模組130係進行一旋轉動作,以使第一中繼台131被轉動至承台120的上方,以及第二中繼台132被轉動至供應台100的上方。位移模組130再將第一中繼台131移動至第一黏合單元14的下方。
The
步驟S3,對位至少一晶粒與承接單元之位置。第三上視覺單元18係擷取晶粒20之影像資訊,並將該影像資訊提供給第一黏合單元14,以使第一真空模組140吸取位於第一中繼台131之晶粒20。
Step S3, aligning the position of at least one die and the receiving unit. The third
待第一真空模組140係吸取晶粒20後,承台120係對第一真空模組120進行一位置調整,以使承台120之欲黏合件21可移動至所欲放置晶粒20的位置。該位置調整為橫向位移、一前後位移或一橫向與前後位移。
After the
待承台120停止移動後,請配合參考第4圖所示,第三上視覺單元18係透過第一透明模組141,以擷取位於晶粒20之晶粒記號200與欲黏合件21之黏合記號210的上影像資訊。
After the
下視覺單元19係透過承台120,以擷取黏合記號210與晶粒記號200的下影像資訊。該承台為透明或部分透明,以利影像的穿透與擷取。
The
該上影像資訊與該下影像資訊係可判斷晶粒20是否位於承台120之所欲放置晶粒20的位置處。
The upper image information and the lower image information can determine whether the
若為是,則至步驟S5。 If yes, go to step S5.
若為否,第一真空模組140係進行一位置調整,以使晶粒記號200對位黏合記號210。該位置調整可為一角度轉動、一軸向移動或一橫向移動。第三上視覺單元18係再次擷取上影像資訊,以及下視覺單元19係再次擷取下影像資訊,藉以判斷晶粒20是否位於承台120之所欲放置晶粒20的位置處。
If not, the
若由再次擷取的上影像資訊的下影像資訊判讀出,晶粒記號200已對位黏合記號210,則至步驟S5。
If it is judged from the lower image information of the upper image information captured again that the
步驟S4,再次提供至少一晶粒。供應單元10之供應台100係進行一橫向移動、一前後移動或一橫向與前後移動,以將欲被吸取之晶粒20移動至真空模組110的下方。
Step S4, providing at least one die again. The
待欲被吸取之晶粒20移動真空模組110的下方後,第一上視覺單元16係擷取所欲頂出之晶粒20的影像資訊,頂針101依據該影像資訊,以再次頂出晶粒20。
After the die 20 to be sucked moves below the
第一上視覺單元16係擷取被頂出之晶粒20的影像資訊,並將該影像資訊傳送給吸取單元20。吸取單元11之真空模組110依據影像資訊,以吸取晶粒20。
The first
位移模組130將第二中繼台132動至吸取有晶粒20之真空模組110的下方。
The
步驟S5,將至少一晶粒放置於承接單元。如步驟S3所述。第一黏合單元14之第一真空模組140係將所吸取之晶粒20放置於承接單元12之承台120的欲黏合件21。
Step S5, placing at least one die on the receiving unit. As described in step S3. The
步驟S6,再次將至少一晶粒轉移至中繼單元。如步驟S4所述,吸取單元11係將所吸取之晶粒20放置於第二中繼台132。
Step S6, transferring at least one die to the relay unit again. As described in step S4 , the pick-up
步驟S7,再次對位至少一晶粒與承接單元之位置。第三上視覺單元18係擷取晶粒20之影像資訊,並將該影像資訊提供給第二黏合單元15,以使第二真空模組140吸取位於第二中繼台132之晶粒20。
Step S7, aligning the position of at least one die and the receiving unit again. The third
待第二真空模組150係吸取晶粒20後,承台120係對第二真空模組150進行一位置調整,以使承台120可移動至所欲放置晶粒20
的位置。該位置調整可為一橫向移動、一前後移動或一橫向與前後移動。
After the
待承台120移動至所欲放置晶粒20的位置後,第三上視覺單元18係透過第二黏合單元15之第二透明模組151,以擷取晶粒記號200與黏合記號210的上影像資訊。下視覺單元19係透過承台12,以擷取晶粒記號200與黏合記號210的下影像資訊。
After the
藉由上影像資訊與下影像資訊,以判斷晶粒記號200與黏合記號210是否對位,若已對位,則第二黏合單元15係將晶粒20放置於承台12。若未對位,則第二黏合單元15之第二真空模組150進行位置調整,以將晶粒記號200對位黏合記號210。該位置調整為一角度旋轉、一橫向移動或一前後移動,並再次擷取上影像資訊與下影像資訊,藉以判斷晶粒20是否位於承台120之所欲放置晶粒的位置處,即欲黏合件21。
Based on the upper image information and the lower image information, it is judged whether the
若由再次擷取的上影像資訊的下影像資訊判讀出,晶粒記號200已對位黏合記號210,第二黏合單元15之第二真空模組150係將晶粒20放置於承台120之所欲放置晶粒的位置處,即欲黏合件21。
If it is judged from the lower image information of the upper image information captured again, the
若第二黏合單元14已將晶粒20放置於承台12的欲黏合件21後,則回至步驟S1。
If the
本發明第三實施例係一種高精度黏晶系統,如第5圖與第6圖所示,高精度黏晶系統具有一供應單元10A、一吸取單元11A、一承接單元12A、一中繼單元13A、一第一黏合單元14A、第二黏合單元15A、一第一上視覺單元16A、一第二上視覺單元17A、一第三上視覺單元18A與一下視覺單元19A。
The third embodiment of the present invention is a high-precision die-bonding system, as shown in Figures 5 and 6, the high-precision die-bonding system has a
於第三實施例中,供應單元10A、吸取單元11A、承接單元12A、中繼單元13A、第一黏合單元14A、第二黏合單元15A、第上視覺單元16A、第二上視覺單元17A、第三上視覺單元18A與下視覺單元19A的設置方式係如同上述之本發明之高精度黏晶系統之第一實施例,故不於此多做贅述,特先陳明。
In the third embodiment, the
第三實施例與上述之第一實施例的差異在於,中繼單元13A僅具有一第一中繼台131A與一位移模組130A,第一中繼台131A係設於位移模組130A的一側,而使本實施例之中繼單元13A為一單翼設計。
The difference between the third embodiment and the above-mentioned first embodiment is that the
本發明第二實施例之一種高精度黏晶方法,如第3圖所示。 A high-precision die-bonding method according to the second embodiment of the present invention is shown in FIG. 3 .
步驟S1,提供至少一晶粒。如第5圖所示,頂針101A頂出位於供應台100A所欲頂出之晶粒20A。第一上視覺單元16A係擷取被頂出之晶粒20A的影像資訊,並將該影像資訊傳送給吸取單元20A。吸取單元11A之真空模組110A依據影像資訊,以吸取晶粒20A。真空模組110A係吸取至少一晶粒20A或複數個晶粒20A。
Step S1, providing at least one die. As shown in FIG. 5 , the
步驟S2,將至少一晶粒轉移至一中繼單元。吸取位移模組111A係將吸取有晶粒20A之真空模組110A移動至中繼單元13A之第一中繼台131A的上方。
Step S2, transferring at least one die to a relay unit. The
第二上視覺單元17A係擷取晶粒20A與中繼單元13A之第一中繼台131A的影像資訊,並將影像資訊傳送給吸取單元11A,以使真空模組110A將晶粒20A放置於第一中繼台131A。
The second
待真空模組110A將晶粒20A放置於第一中繼台131A後,吸取位移模組111A係將真空模組110A移回至最初位置,以再次吸取晶粒20A。
After the
步驟S3,對位至少一晶粒與一承接單元之位置。其係如上述之本發明之高精度黏晶方法所述之步驟S3,故不於此多做贅述,特先陳明。 Step S3, aligning the positions of at least one die and one receiving unit. It is the step S3 described in the above-mentioned high-precision die bonding method of the present invention, so it will not be repeated here, but will be stated first.
步驟S4,再次提供至少一晶粒。供應單元10A之供應台100A係進行一橫向移動、一前後移動或一橫向與前後移動,以將欲被吸取之晶粒20A移動至真空模組110A的下方。
Step S4, providing at least one die again. The
待欲被吸取之晶粒20A移動真空模組110A的下方後,第一上視覺單元16A係擷取所欲頂出之晶粒20A的影像資訊,頂針101A依據該影像資訊,以頂出晶粒20A。
After the
第一上視覺單元16A係擷取被頂出之晶粒20A的影像資訊,並將該影像資訊傳送給吸取單元20A。吸取單元11A之真空模組110A依據影像資訊,以吸取晶粒20A。
The first
位移模組130A將第一中繼台131A移動至吸取有晶粒20A之真空模組110A的下方。
The
步驟S5,將至少一晶粒放置於承接單元。其係如上述之本發明之高精度黏晶方法所述之步驟S5,故不於此多做贅述,特先陳明。 Step S5, placing at least one die on the receiving unit. It is the step S5 described in the above-mentioned high-precision die bonding method of the present invention, so it will not be repeated here, but will be stated first.
步驟S6,再次將至少一晶粒轉移至中繼單元。吸取單元11A真空模組110A將所吸取之晶粒20A置於第一中繼台131A。
Step S6, transferring at least one die to the relay unit again. The
步驟S7,再次對位至少一晶粒與一承接單元之位置。第三上視覺單元18A係擷取晶粒20A之影像資訊,並將該影像資訊提供給第二黏合單元15A,以使第二真空模組140A吸取位於第一中繼台131A之晶粒20A。
Step S7, aligning the positions of at least one die and one receiving unit again. The third
待第二真空模組150A係吸取晶粒20A後,承台120A係對第二真空模組150A進行位置調整,以使承台120A可移動至所欲放置晶粒20A的位置,即欲黏合件21A。
After the
如步驟S3所述,藉由該上影像資訊與該下影像資訊係可判斷晶粒20A是否位於承台120A之所欲放置晶粒的位置處。藉以將晶粒放置於承台120A之欲黏合件21A。
As described in step S3, it can be determined whether the
藉由上影像資訊與下影像資訊,以判斷晶粒記號與黏合記號是否對位,若已對位,則第二黏合單元15A係將晶粒20A放置於承台12A。若未對位,則第二黏合單元15A之第二真空模組150A進行一位置調整,以將晶粒記號對位黏合記號。該位置調整為角度旋轉、一橫向移動或一前後移動。並再次擷取上影像資訊與下影像資訊,藉以判斷晶粒20A是否位於承台120A之所欲放置晶粒的位置處。
Based on the upper image information and the lower image information, it is judged whether the die mark and the bonding mark are aligned. If they are aligned, the
若由再次擷取的上影像資訊的下影像資訊判讀出,晶粒記號已對位黏合記號,第二黏合單元15A之第二真空模組150A係將晶粒20A放置於承台120A之所欲放置晶粒的位置處。
If it is judged from the lower image information of the upper image information captured again, the die mark has been aligned with the bonding mark, and the
若第二黏合單元14A已將晶粒20A放置於承台12A後,則回至步驟S1。
If the
本發明第四實施例係一種高精度黏晶系統,如第7圖與第8圖所示,高精度黏晶系統具有一供應單元10B、一吸取單元11B、一承接單元12B、一中繼單元13B、一第一黏合單元14B、第二黏合單元15B、一第一上視覺單元16B、一第二上視覺單元17B、一第三上視覺單元18B與一下視覺單元19B。
The fourth embodiment of the present invention is a high-precision die-bonding system. As shown in Figures 7 and 8, the high-precision die-bonding system has a
於第四實施例中,供應單元10B、吸取單元11B、承接單元12B、中繼單元13B、第一黏合單元14B、第二黏合單元15B、第一上
視覺單元16B、第二上視覺單元17B、第三上視覺單元18B與下視覺單元19B的設置方式係如同上述之本發明之高精度黏晶系統之第第一實施例,故不於此多做贅述,特先陳明。
In the fourth embodiment,
第四實施例與上述之第一實施例的差異在於,中繼單元13B具有一第一中繼台131B、一第二中繼台132B與一位移模組130B,第一中繼台131B與第二中繼台132B係設於位移模組130B的兩相對側,第一中繼台131B與第二中繼台132B為一錯位排列,而使本實施例之中繼單元13B為一錯位設計。
The difference between the fourth embodiment and the above-mentioned first embodiment is that the
本發明第二實施例之一種高精度黏晶方法,如第3圖所示。 A high-precision die-bonding method according to the second embodiment of the present invention is shown in FIG. 3 .
步驟S1,提供至少一晶粒。其如上述之本發明之高精度黏晶方法所述之步驟S1,故不於此多做贅述,特先陳明。 Step S1, providing at least one die. It is like step S1 described in the above-mentioned high-precision die bonding method of the present invention, so it will not be repeated here, but will be stated first.
步驟S2,將至少一晶粒轉移至一中繼單元。吸取位移模組111B係將吸取有晶粒20B之真空模組110B移動至中繼單元13B之第一中繼台131B的上方。
Step S2, transferring at least one die to a relay unit. The
第二上視覺單元17B係擷取晶粒20B與中繼單元13B之第一中繼台131B的影像資訊,並將影像資訊傳送給吸取單元11B,以使真空模組110B將晶粒20B放置於第一中繼台131B。
The second
待真空模組110B將晶粒20B放置於第一中繼台131B後,吸取位移模組111B係將真空模組110B移回至最初位置,以再次吸取晶粒20B。
After the
位移模組130B係使第一中繼台131B移動至承台120B的上方,以及移動第二中繼台132B至供應台100B的上方。位移模組130B再將第一中繼台131B移動至第一黏合單元14B的下方。
The
於本實施例中,步驟S3至步驟S7係如上述之本發明之高精度黏晶方法所述之步驟S3至步驟S7,故不於此多做贅述,特先陳明。 In this embodiment, steps S3 to S7 are as described in the above-mentioned high-precision die bonding method of the present invention, so they will not be repeated here, but will be stated first.
第9圖為本發明第五實施例之一種用於高精度黏晶之對位系統,第9圖顯示黏合記號與一晶粒記號之對位。本發明之用於高精度黏晶之對位系統,適用一具有晶粒記號300之晶粒30,該對位系統包含有一上視覺單元40、一黏合單元41、一承接單元42與一下視覺單元43。
Fig. 9 is an alignment system for high-precision die bonding according to the fifth embodiment of the present invention. Fig. 9 shows the alignment of bonding marks and a die mark. The alignment system for high-precision die bonding of the present invention is suitable for a die 30 with a
黏合單元41具有一真空模組410,真空模組410具有一透明模組411。透明模組411為一透明體或一穿孔。
The
上視覺單元40設於黏合單元41的上方。
The upper
承接單元42具有一承台420。承台420為透明。承台420係供一欲黏合件31設置,欲黏合件31為透明,欲黏合件31具有至少一黏合記號310。
The receiving
上述之晶粒30具有至少一透明區301,晶粒記號300係位於該透明區301。
The above-mentioned
如上所述,真空模組410係吸取晶粒30。上視覺單元40透過透明模組411與透明區301,以擷取晶粒記號301與黏合記號310的上影像資訊。下視覺單元43透過承台420與欲黏合件31,以擷取黏合記號310與晶粒記號301的下影像資訊。藉由該上影像資訊與該下影像資訊,而得知晶粒30是否對位承台420之欲黏合件31。用於高精度黏晶之對位系統須精密對位時,將該黏合單元41側移或將該承台420側移來進行對位,達成該晶粒30與該欲黏合件31的精密對位。
As mentioned above, the
綜合上述,本發明之高精度黏晶系統及其方法,其係將系統的位移裝置設於供應單元或承接單元的非正上方或下方,故真空模 組、第一中繼台或第二中繼台移動時,其所可能產生的微塵係無法掉落於供應單元或承接單元,藉以提升潔淨度。 To sum up the above, the high-precision die bonding system and method of the present invention set the displacement device of the system not directly above or below the supply unit or the receiving unit, so the vacuum mold When the group, the first relay station or the second relay station is moving, the dust that may be generated cannot fall on the supply unit or the receiving unit, so as to improve the cleanliness.
另外,第一真空模組或第二真空模組的移動距離甚小,故可能產生的微塵甚微,故亦可保持潔淨度。 In addition, the moving distance of the first vacuum module or the second vacuum module is very small, so the dust that may be generated is very small, so the cleanliness can also be maintained.
再者,本發明之中繼單元、第一黏合單元與第二黏合單元的設計係可一次提供至少一晶粒給承接單元,藉以提升黏晶的速率。 Furthermore, the design of the relay unit, the first bonding unit and the second bonding unit in the present invention can provide at least one die to the receiving unit at a time, so as to increase the speed of die bonding.
再一,本發明所使用的對位方法係運用晶粒記號與黏合記號之間的對位,故可提升黏晶的精度。 Furthermore, the alignment method used in the present invention uses the alignment between the die mark and the bonding mark, so the precision of die bonding can be improved.
再二,本發明之黏合總成的第一黏合單元與第二黏合單元是不動或不做大行程移動,可裝置隔離板,故可減少污染。同時為了精度,黏合總成的第一黏合單元與第二黏合單元可微小的橫向移動。因此本發明具有低汙染與高精度的特性。 Second, the first bonding unit and the second bonding unit of the bonding assembly of the present invention do not move or move in large strokes, and can be equipped with a separation plate, so pollution can be reduced. At the same time, for precision, the first bonding unit and the second bonding unit of the bonding assembly can move slightly laterally. Therefore, the present invention has the characteristics of low pollution and high precision.
10:供應單元 100:供應台 101:頂針 11:吸取單元 110:真空模組 111:吸取位移模組 12:承接單元 120:承台 13:中繼單元 130:位移模組 131:第一中繼台 132:第二中繼台 14:第一黏合單元 140:第一真空模組 141:第一透明模組 15:第二黏合單元 150:第二真空模組 151:第二透明模組 154:隔離板 16:第一上視覺單元 17:第二上視覺單元 18:第三上視覺單元 19:下視覺單元 20:晶粒 21:欲黏合件 10: supply unit 100: Supply Desk 101: Thimble 11: suction unit 110: Vacuum Module 111: Suction Displacement Module 12: Undertaking unit 120: platform 13: Relay unit 130: Displacement Module 131: The first repeater 132: Second relay station 14: The first bonding unit 140: The first vacuum module 141: The first transparent module 15: Second bonding unit 150: Second Vacuum Module 151: Second transparent module 154: isolation board 16: The first visual unit 17: Second Upper Vision Unit 18: Third Upper Vision Unit 19: Lower Visual Unit 20: grain 21: To glue parts
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