TWI780296B - Wafer cleaning apparatus and wafer cleaning method - Google Patents

Wafer cleaning apparatus and wafer cleaning method Download PDF

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TWI780296B
TWI780296B TW108102833A TW108102833A TWI780296B TW I780296 B TWI780296 B TW I780296B TW 108102833 A TW108102833 A TW 108102833A TW 108102833 A TW108102833 A TW 108102833A TW I780296 B TWI780296 B TW I780296B
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cup
wafer
shielding plate
wafer cleaning
pedestal
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TW108102833A
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Chinese (zh)
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TW201935547A (en
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五十嵐健作
阿部達夫
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日商信越半導體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

本發明係為一種晶圓洗淨處理裝置，係將晶圓支承於台座上且該台座為得以旋轉，在使晶圓旋轉的同時藉由藥液而進行洗淨處理，艙室包含於艙室內將氣體予以供氣的供氣部及將氣體予以排氣的排氣部，晶圓洗淨處理裝置包括杯部，係以將支承晶圓的台座予以圍繞的方式配置，且得以上下移動而捕捉自經旋轉的晶圓甩飛的洗淨後的藥液；以及遮蔽板，配置於杯部的外側，遮蔽板具有中央孔形狀，且遮蔽板為自該艙室的內壁往內側延伸，藉此提供不會因杯部升降而使氣體的流路大幅變化且將艙室內的壓力維持於固定的晶圓洗淨處理裝置及晶圓洗淨方法。The present invention relates to a wafer cleaning treatment device, which supports the wafer on a pedestal and the pedestal can be rotated, while the wafer is rotated, the cleaning process is performed by the chemical solution, and the cabin is included in the cabin. The gas supply part for supplying gas and the exhaust part for exhausting gas, the wafer cleaning processing device includes a cup part, which is arranged so as to surround the pedestal supporting the wafer, and can move up and down to capture The cleaned medicinal liquid thrown off by the rotating wafer; and the shielding plate, which is arranged on the outside of the cup, has a central hole shape, and the shielding plate extends from the inner wall of the cabin to the inside, thereby providing A wafer cleaning processing apparatus and a wafer cleaning method that maintain a constant pressure in a chamber without greatly changing the gas flow path due to the lifting and lowering of the cup.

Description

晶圓洗淨處理裝置及晶圓洗淨方法Wafer cleaning processing device and wafer cleaning method

本發明係關於一種晶圓洗淨處理裝置及晶圓洗淨方法。The invention relates to a wafer cleaning processing device and a wafer cleaning method.

作為晶圓洗淨處理裝置，如圖2所示者係為人所知。圖2的洗淨處理裝置20係由艙室23、支承晶圓24並使其旋轉的台座25及用來回收飛散的藥液或進行排液的杯部26所構成，其中該艙室23具備有將氣體予以供氣的供氣部21及將氣體予以排氣的排氣部22。As a wafer cleaning processing apparatus, one shown in FIG. 2 is known. The cleaning treatment device 20 of FIG. 2 is composed of a chamber 23, a base 25 for supporting and rotating a wafer 24, and a cup 26 for recovering scattered chemical liquid or discharging liquid, wherein the chamber 23 is equipped with a A gas supply unit 21 for supplying gas and an exhaust unit 22 for exhausting gas.

為了進行晶圓的搬運，用來回收飛散的藥液或進行排液的杯部26必須低過晶圓24位置，而附有升降機構。In order to transfer the wafer, the cup part 26 for recovering the scattered chemical solution or draining the liquid must be lower than the position of the wafer 24, and an elevating mechanism is attached.

圖2的洗淨處理裝置20之中，自氣體的供氣部21往排氣部22的氣體的流路僅有通過杯部26的內側的單一方向。In the cleaning treatment device 20 of FIG. 2 , the flow path of the gas from the gas supply part 21 to the exhaust part 22 has only one direction passing through the inside of the cup part 26 .

雖然此時為了搬送晶圓，杯部26必須低過晶圓24的位置，但過去的晶圓洗淨處理裝置中，在杯部26下降時台座25及杯部26的間隔會變得狹窄而造成氣體的流路被限制。受此影響，艙室23內台座25的上部的壓力會上升，來自供氣部21的氣體的流動會發生紊亂，氣體會變得捲揚。Although at this time, in order to transfer the wafer, the cup portion 26 must be lower than the position of the wafer 24, but in the past wafer cleaning processing apparatus, when the cup portion 26 descends, the distance between the pedestal 25 and the cup portion 26 becomes narrow and the The gas flow path is restricted. Affected by this, the pressure above the pedestal 25 in the chamber 23 rises, the flow of the gas from the gas supply part 21 is disturbed, and the gas becomes entrained.

其結果，藉由氣體的流動的變化，會變得洗淨中產生的霧氣於艙室23內擴散，而有造成汙染晶圓的問題。As a result, the mist generated during cleaning diffuses in the chamber 23 due to the change in the gas flow, and there is a problem of contaminating the wafer.

為了解決這個問題，已有建議藉由電子控制來調整供氣量（參考專利文獻1）。然而，藉由電子控制調整供氣量的場合，無論如何也無法即時地對應而引起壓力變動。 ［先前技術文獻］ ［專利文獻］In order to solve this problem, it has been proposed to adjust the air supply volume by electronic control (refer to Patent Document 1). However, when the air supply volume is adjusted by electronic control, it cannot respond in real time anyway, causing pressure fluctuations. [Prior Technical Literature] [Patent Document]

［專利文獻1］日本特開2008-060107號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-060107

［發明所欲解決之問題］ 有鑑於上述問題點，本發明之目的係提供一種晶圓洗淨處理裝置及晶圓洗淨方法，在杯部上升時及杯部下降時使氣體的流路不會大幅變化且將艙室內的壓力維持於固定。 ［解決問題之技術手段］[Problem to be solved by the invention] In view of the above problems, the purpose of the present invention is to provide a wafer cleaning processing device and a wafer cleaning method, so that the flow path of the gas will not change significantly when the cup portion is raised and the cup portion is lowered, and the air in the cabin The pressure is kept constant. [Technical means to solve the problem]

為達成上述目的，本發明提供一種晶圓洗淨處理裝置，係將一晶圓支承於一台座之上，該台座係為配置於一艙室內且為得以旋轉，在使該晶圓旋轉的同時藉由一藥液而將該晶圓予以洗淨處理，其中該艙室包含於艙室內將氣體予以供氣的一供氣部及將氣體予以排氣的一排氣部，該晶圓洗淨處理裝置包括一杯部，係以將支承該晶圓的台座予以圍繞的方式配置，且得以上下移動而捕捉自經旋轉的晶圓甩飛的洗淨後的藥液，以及一遮蔽板，係配置於該杯部的外側，該遮蔽板具有中央孔形狀，且該遮蔽板為自該艙室的內壁往內側延伸。In order to achieve the above object, the present invention provides a wafer cleaning processing device, which supports a wafer on a base, and the base is arranged in a cabin and rotated, while the wafer is rotated. The wafer is cleaned by a chemical solution, wherein the chamber includes a gas supply part for supplying gas in the chamber and an exhaust part for exhausting gas. The wafer cleaning process The device includes a cup part arranged in such a manner as to surround a pedestal supporting the wafer, and capable of moving up and down to catch the cleaned chemical liquid thrown off from the rotating wafer, and a shielding plate arranged on the Outside the cup portion, the shielding plate has a central hole shape, and the shielding plate extends from the inner wall of the cabin to the inner side.

若為這樣的晶圓洗淨處理裝置，能夠在杯部上升時及杯部下降時不會使氣體的流路大幅變化且將艙室內的壓力維持於固定，因此變得能夠比過去的洗淨裝置更高品質地洗淨晶圓。此外，若為這樣的晶圓洗淨處理裝置，變得能夠在不必在進行供氣側的流量控制的情形下洗淨晶圓。According to such a wafer cleaning processing apparatus, the pressure in the chamber can be kept constant without greatly changing the flow path of the gas when the cup is raised and when the cup is lowered. The device cleans the wafer with higher quality. In addition, with such a wafer cleaning processing apparatus, it becomes possible to clean the wafer without performing flow control on the gas supply side.

這個時候該遮蔽板設置於較該台座所支承的晶圓的高度位置為低的位置為佳。At this time, it is preferable that the shielding plate is set at a position lower than the height of the wafer supported by the pedestal.

若為這樣的晶圓洗淨處理裝置，則變得能夠沒有問題地搬運晶圓。According to such a wafer cleaning processing apparatus, wafers can be transported without problems.

此外，這個時候該遮蔽板具有該杯部的內徑以上外徑以下的內徑的孔為佳。In addition, at this time, it is preferable that the shielding plate has a hole with an inner diameter greater than or equal to the inner diameter of the cup than the outer diameter.

若為這樣的晶圓洗淨處理裝置，則變得能夠在杯部上升時拉高排氣效率並使晶圓的品質提升。According to such a wafer cleaning processing apparatus, it becomes possible to increase the exhaust efficiency and improve the quality of the wafer when the cup portion is raised.

此外，這個時候該遮蔽板將在該杯部上升時藉由該遮蔽板及該杯部所形成的間隙予以完全地塞住為佳。In addition, at this time, it is preferable that the shielding plate completely plugs the gap formed by the shielding plate and the cup when the cup portion rises.

若為這樣的晶圓洗淨處理裝置，則變得能夠在杯部上升時拉高排氣效率並使晶圓的品質進一步提升。According to such a wafer cleaning processing apparatus, it becomes possible to increase the exhaust efficiency when the cup portion is raised, and to further improve the quality of the wafer.

此外，這個時候將在該杯部上升時藉由該台座及該杯部所形成的間隙的面積定為排氣截面積1，將在該杯部下降時藉由該台座及該杯部所形成的間隙的面積定為排氣截面積2，將在該杯部下降時藉由該遮蔽板及該杯部所形成的間隙的面積定為排氣截面積3的時候，該遮蔽板讓排氣截面積2及排氣截面積3的合計為排氣截面積1以上為佳。In addition, at this time, the area of the gap formed by the pedestal and the cup when the cup is raised is defined as the exhaust cross-sectional area 1, and the area of the gap formed by the pedestal and the cup when the cup is lowered is The area of the gap is defined as the exhaust cross-sectional area 2, and when the area of the gap formed by the shielding plate and the cup is defined as the exhaust cross-sectional area 3 when the cup descends, the shielding plate allows the exhaust The total of the cross-sectional area 2 and the exhaust cross-sectional area 3 is preferably equal to or greater than the exhaust cross-sectional area 1.

若為這樣的晶圓洗淨處理裝置，則能夠在杯部上升時為了維持台座端的風速而縮小間隙且在杯部下降時藉由擴大間隙來減慢台座端的風速，則變得能夠防止殘留霧氣藉由亂流而往晶圓附著。According to such a wafer cleaning processing apparatus, the gap can be narrowed to maintain the wind speed at the pedestal end when the cup portion is raised, and the wind speed at the pedestal end can be slowed down by expanding the gap when the cup portion is lowered, thereby preventing residual mist Attaches to the wafer by turbulent flow.

此外，這個時候該杯部係在該杯部下降時，於該台座及該杯部的上端之間具有間隙為佳。In addition, at this time, when the cup is lowered, it is better to have a gap between the base and the upper end of the cup.

若為這樣的晶圓洗淨處理裝置，則變得能夠防止在杯部下降時殘留霧氣的捲揚。According to such a wafer cleaning processing apparatus, it becomes possible to prevent the remaining mist from being lifted up when the cup portion is lowered.

此外，這個時候該杯部係於上部具有朝向內側的傾斜或R形狀為佳。In addition, at this time, it is preferable that the upper part of the cup has an inward slope or an R shape.

若為這樣的晶圓洗淨處理裝置，則能夠在有效捕捉洗淨後的藥液的同時不會改變在杯部升降時自艙室上部的供氣流往台座下的排氣流路。According to such a wafer cleaning processing apparatus, the cleaned chemical solution can be effectively captured without changing the exhaust flow path from the supply air flow from the upper part of the chamber to the lower seat when the cup is raised and lowered.

此外，本發明提供一種晶圓洗淨方法，使用該晶圓洗淨處理裝置，在藉由該遮蔽板調整該艙室內的氣體的流動的同時洗淨晶圓。In addition, the present invention provides a wafer cleaning method, using the wafer cleaning processing device to clean the wafer while adjusting the gas flow in the chamber through the shielding plate.

若為這樣的晶圓洗淨方法，能夠在杯部上升時及杯部下降時不會使氣體的流路大幅變化且將艙室內的壓力維持於固定，因此變得能夠比過去的洗淨裝置更高品質地洗淨晶圓。此外，若為這樣的晶圓洗淨方法，變得能夠沒有必要在進行供氣側的流量控制的情形下洗淨晶圓。 ［對照先前技術之功效］According to such a wafer cleaning method, the pressure in the chamber can be kept constant without greatly changing the flow path of the gas when the cup is raised and when the cup is lowered. Clean wafers with higher quality. In addition, according to such a wafer cleaning method, it becomes possible to clean the wafer without performing flow control on the gas supply side. [Compared with the effect of previous technology]

若為本發明的晶圓洗淨處理裝置及晶圓洗淨方法，能夠在幾乎沒有改變杯部上升時及下降時自供氣部往排氣部的氣體的流路的情形下，藉由抑制艙室內的壓力變動而將洗淨後的殘留霧氣的捲揚的可能性消滅。因此，變得能夠得到比過去的洗淨裝置更高品質的晶圓。此外，若為本發明的晶圓洗淨處理裝置及晶圓洗淨方法，也變得能夠提供不必有供氣側的流量控制的晶圓洗淨裝置及晶圓洗淨方法。According to the wafer cleaning processing apparatus and the wafer cleaning method of the present invention, the flow path of the gas from the gas supply part to the exhaust part when the cup part is raised and lowered can be suppressed. The pressure fluctuation in the cabin eliminates the possibility of hoisting the residual mist after cleaning. Therefore, it becomes possible to obtain higher quality wafers than conventional cleaning apparatuses. Furthermore, according to the wafer cleaning processing apparatus and wafer cleaning method of the present invention, it becomes possible to provide a wafer cleaning apparatus and a wafer cleaning method that do not require flow control on the gas supply side.

如上述，在自供氣部取入氣體的量的電子控制中，無法充分抑制壓力變動，而有造成了產生的霧氣汙染晶圓的問題。As described above, in the electronic control of the amount of gas taken in from the gas supply unit, the pressure fluctuation cannot be sufficiently suppressed, and there is a problem that the generated mist contaminates the wafer.

接著，本發明人等為了解決上述問題而反覆積極討論的結果，找出了若為在用以捕捉藥液的杯部的外側將含中央孔形狀的遮蔽板予以配置的晶圓洗淨處理裝置，則變得能夠比過去的晶圓洗淨處理裝置更高品質地洗淨晶圓，進而完成本發明。Next, as a result of intensive discussions by the present inventors in order to solve the above-mentioned problems, they found out a wafer cleaning processing apparatus in which a shielding plate having a central hole shape is arranged outside the cup portion for catching the chemical solution. , it becomes possible to clean the wafer with higher quality than the conventional wafer cleaning processing apparatus, and the present invention has been completed.

換言之，本發明的裝置係為將一晶圓支承於一台座之上，該台座係唯配置於一艙室內且為得以旋轉的，在使該晶圓旋轉的同時藉由一藥液而將該晶圓予以洗淨處理的晶圓洗淨處理裝置，其中該艙室包含於艙室內將氣體予以供氣的一供氣部及將氣體予以排氣的一排氣部，該晶圓洗淨處理裝置包括一杯部，係以將支承該晶圓的台座予以圍繞的方式配置，且得以上下移動而捕捉自經旋轉的晶圓甩飛的洗淨後的藥液，以及一遮蔽板，係配置於該杯部的外側，該遮蔽板具有中央孔形狀，且該遮蔽板為自該艙室的內壁往內側延伸。In other words, the apparatus of the present invention supports a wafer on a pedestal which is only arranged in a chamber and is rotatable. A wafer cleaning treatment device for cleaning wafers, wherein the cabin includes a gas supply part for supplying gas in the cabin and an exhaust part for exhausting gas, the wafer cleaning treatment device It includes a cup part arranged in such a way as to surround a pedestal supporting the wafer, and can move up and down to catch the cleaned chemical solution thrown off from the rotating wafer, and a shielding plate arranged on the Outside the cup portion, the shielding plate has a central hole shape, and the shielding plate extends from the inner wall of the compartment to the inner side.

以下針對本發明進行具體說明，然而本發明不限於此類。The present invention will be specifically described below, but the present invention is not limited thereto.

首先，針對本發明的晶圓洗淨處理裝置進行說明。圖1係表示本發明中晶圓洗淨處理裝置的一範例的示意圖。First, the wafer cleaning processing apparatus of the present invention will be described. FIG. 1 is a schematic diagram showing an example of a wafer cleaning processing apparatus in the present invention.

晶圓洗淨處理裝置10中，晶圓14係支承於旋轉驅動的台座15上。在使該晶圓14旋轉的同時藉由藥液而將晶圓14予以洗淨處理。於洗淨中的艙室13中，自供氣部11導入氣體且自排氣部12排氣。In the wafer cleaning processing apparatus 10, a wafer 14 is supported on a pedestal 15 which is driven to rotate. The wafer 14 is cleaned with a chemical solution while rotating the wafer 14 . In the chamber 13 being cleaned, gas is introduced from the gas supply unit 11 and exhausted from the exhaust unit 12 .

此外，能夠上下移動的杯部16係以將台座15予以圍繞的方式配置，藉由杯部16捕捉自經旋轉的晶圓14甩飛的洗淨後的藥液。Moreover, the cup part 16 movable up and down is arranged so as to surround the pedestal 15, and the cleaned chemical solution thrown off from the rotating wafer 14 is captured by the cup part 16.

這個時候，杯部16的外側配置有遮蔽板17，該遮蔽板17具有中央孔形狀，且該遮蔽板17為自該艙室13的內壁往內側延伸。藉由設置這樣的遮蔽板17，能夠非常簡單地消滅艙室內的壓力變動，因此變得能夠更高品質地洗淨晶圓。At this time, a shielding plate 17 is disposed on the outer side of the cup portion 16 , the shielding plate 17 has a central hole shape, and the shielding plate 17 extends from the inner wall of the compartment 13 to the inner side. By providing such a shielding plate 17 , pressure fluctuations in the chamber can be eliminated very simply, and thus wafers can be cleaned with higher quality.

換言之，過去的晶圓洗淨處理裝置20中，杯部26上升時，在藉由圖2的（a）及圖3的（c）的排氣流路D排氣的同時回收飛散的藥液或進行排液，然而，杯部26下降時，台座25及杯部26所形成的圖2的（b）及圖3的（d）的排氣流路E會變小而造成氣體的流路被限制。因此，在杯部26升降時會發生艙室23內的壓力變動，洗淨中產生的殘留霧氣會捲揚而造成了晶圓汙染。In other words, in the conventional wafer cleaning processing apparatus 20, when the cup portion 26 rises, the scattered chemical solution is recovered while being exhausted through the exhaust flow path D of FIG. 2(a) and FIG. 3(c). Or discharge liquid, however, when the cup part 26 descends, the exhaust flow path E of Fig. 2 (b) and Fig. 3 (d) formed by the pedestal 25 and the cup part 26 will become smaller, resulting in a gas flow path Is limited. Therefore, when the cup portion 26 is raised and lowered, the pressure in the chamber 23 fluctuates, and the residual mist generated during cleaning is swept up to cause contamination of the wafer.

若為本發明的晶圓洗淨處理裝置10，杯部16上升時藉由縮小排氣流路A來維持台座15端的風速，此外，杯部下降時藉由擴大排氣流路B及排氣流路C所成的杯部16外周的間隙來減弱台座15端的風速，而能夠在杯部16上升時及杯部16下降時不使氣體的流路大幅變化且將艙室內的壓力維持於固定，因此變得能夠控制產生的霧氣所致的晶圓的汙染。In the case of the wafer cleaning processing device 10 of the present invention, the wind speed at the end of the pedestal 15 is maintained by narrowing the exhaust flow path A when the cup portion 16 rises; The gap on the outer periphery of the cup portion 16 formed by the flow path C weakens the wind speed at the end of the pedestal 15, and the pressure in the cabin can be maintained at a constant level without greatly changing the flow path of the gas when the cup portion 16 rises and when the cup portion 16 descends. , and thus it becomes possible to control the contamination of the wafer by the generated fog.

進一步，若為本發明的晶圓洗淨處理裝置，艙室內的壓力幾乎不會變動，因此變得沒有必要進行供氣量調整，變得能夠更簡便地洗淨晶圓。Furthermore, according to the wafer cleaning processing apparatus of the present invention, since the pressure in the chamber hardly fluctuates, it becomes unnecessary to adjust the air supply amount, and the wafers can be cleaned more easily.

設置遮蔽板17的高度位置雖然沒有特別限制，設置於較台座15所支承的晶圓14的高度位置為低的位置為佳。若為這樣的遮蔽板的高度位置，因為不會在晶圓的取放時造成干涉，變得能夠沒有問題地搬運晶圓。The height position where the shielding plate 17 is installed is not particularly limited, but it is preferably installed at a position lower than the height position of the wafer 14 supported by the pedestal 15 . With such a height position of the shielding plate, the wafer can be transported without any problem because there is no interference when the wafer is taken in and out.

遮蔽板17的形狀雖然沒有特別限制，具有杯部16的內徑以上外徑以下的內徑的孔為佳。若為這樣的遮蔽板的形狀，變得能夠在杯部上升時拉高排氣效率並使晶圓的品質提升。The shape of the shielding plate 17 is not particularly limited, but preferably has a hole with an inner diameter equal to or greater than the inner diameter of the cup portion 16 and less than the outer diameter. With such a shape of the shielding plate, it is possible to increase the exhaust efficiency and improve the quality of the wafer when the cup portion is raised.

此外，遮蔽板17將在杯部16上升時藉由遮蔽板17及杯部16所形成的間隙予以完全地塞住為佳。若為這樣的遮蔽板的形狀，變得能夠在杯部上升時拉高排氣效率並使晶圓的品質提升。In addition, it is preferable that the shielding plate 17 completely closes the gap formed by the shielding plate 17 and the cup portion 16 when the cup portion 16 is raised. With such a shape of the shielding plate, it is possible to increase the exhaust efficiency and improve the quality of the wafer when the cup portion is raised.

將在杯部16上升時藉由台座15及杯部16所形成的圖1的（a）及圖3的（a）的排氣流路A的面積定為排氣截面積1，將在杯部16下降時藉由台座15及杯部16所形成的圖1的（b）及圖3的（b）的排氣流路B的面積定為排氣截面積2，將在杯部16下降時藉由遮蔽板17及杯部16所形成的圖1的（b）及圖3的（b）的排氣流路C的面積定為排氣截面積3的時候，遮蔽板17讓排氣截面積2及排氣截面積3的合計為排氣截面積1以上為佳。若為具備這樣的遮蔽板17的本發明的晶圓洗淨處理裝置，能夠在杯部上升時為了維持台座端的風速而縮小間隙且在杯部下降時藉由擴大間隙來減慢台座端的風速，則變得能夠防止亂流所致的殘留霧氣往晶圓附著。此時，排氣截面積2及排氣截面積3的合計為大於排氣截面積1的3.0倍即足夠。The area of the exhaust flow path A in Fig. 1(a) and Fig. 3(a) formed by the pedestal 15 and the cup part 16 when the cup part 16 rises is defined as the exhaust cross-sectional area 1, and the When the part 16 descends, the area of the exhaust flow path B in Fig. 1(b) and Fig. 3(b) formed by the pedestal 15 and the cup part 16 is defined as the exhaust cross-sectional area 2, and the exhaust flow path B in the cup part 16 will be lowered When the area of the exhaust flow path C in Fig. 1 (b) and Fig. 3 (b) formed by the shielding plate 17 and the cup portion 16 is set as the exhaust cross-sectional area 3, the shielding plate 17 allows the exhaust The total of the cross-sectional area 2 and the exhaust cross-sectional area 3 is preferably equal to or greater than the exhaust cross-sectional area 1. If it is the wafer cleaning processing apparatus of the present invention equipped with such a shielding plate 17, the gap can be narrowed in order to maintain the wind speed at the pedestal end when the cup portion is raised, and the wind speed at the pedestal end can be slowed down by enlarging the gap when the cup portion is lowered. Then, it becomes possible to prevent the remaining mist due to the turbulent flow from adhering to the wafer. In this case, it is sufficient that the sum of the exhaust cross-sectional area 2 and the exhaust cross-sectional area 3 is greater than 3.0 times the exhaust cross-sectional area 1 .

杯部16係在杯部16下降時，於台座15及杯部16的上端之間具有間隙為佳。若為這樣的杯部，則變得能夠防止杯部16下降時的殘留霧氣的捲揚。The cup part 16 is preferably provided with a gap between the base 15 and the upper end of the cup part 16 when the cup part 16 descends. With such a cup portion, it becomes possible to prevent the remaining mist from being lifted up when the cup portion 16 descends.

此場合下，杯部16係於上部具有朝向內側的傾斜或R形狀為佳。若為這樣的杯部，不會改變在杯部16升降時自艙室13上部的供氣部11流往台座15下的排氣流路。換言之，杯部16下降時，氣體會變成流往杯部16內周部的排氣流路B加上杯部16外周部的排氣流路C，相較於杯部上升時的排氣流路A，排氣流路不會大幅變化。In this case, it is preferable that the cup portion 16 has an inward slope or an R shape at the upper portion. With such a cup part, the exhaust gas flow path from the air supply part 11 at the upper part of the cabin 13 to the bottom of the pedestal 15 is not changed when the cup part 16 is raised and lowered. In other words, when the cup portion 16 descends, the gas will flow to the exhaust flow path B at the inner peripheral portion of the cup portion 16 plus the exhaust flow path C at the outer peripheral portion of the cup portion 16, compared with the exhaust flow when the cup portion ascends. In road A, the exhaust flow path will not change significantly.

其次，說明本發明的晶圓洗淨方法。本發明的晶圓洗淨方法中，使用晶圓洗淨裝置10，藉由遮蔽板17調整該艙室13內的氣體的流動的同時洗淨晶圓14。Next, the wafer cleaning method of the present invention will be described. In the wafer cleaning method of the present invention, the wafer 14 is cleaned while adjusting the gas flow in the chamber 13 by the shielding plate 17 using the wafer cleaning device 10 .

過去的晶圓洗淨方法中，在杯部26升降時會發生艙室內的壓力變動，洗淨中產生的殘留霧氣會捲揚而造成了晶圓的汙染，然而本發明的晶圓的洗淨方法中，能夠非常簡單地消滅壓力變動，變得能夠更高品質地洗淨晶圓。In the past wafer cleaning method, when the cup part 26 is raised and lowered, the pressure in the cabin will fluctuate, and the residual mist generated in the cleaning will be rolled up to cause contamination of the wafer. However, the wafer cleaning method of the present invention In this method, the pressure fluctuation can be eliminated very simply, and the wafer can be cleaned with higher quality.

此外，過去的晶圓洗淨方法中供氣量調整係為必要，然而本發明的洗淨方法中，艙室13內的壓力幾乎不會變動，因此變得不一定要供氣量調整，變得能夠更簡便地洗淨晶圓。In addition, in the conventional wafer cleaning method, it was necessary to adjust the air supply amount, but in the cleaning method of the present invention, the pressure in the chamber 13 hardly fluctuates, so it becomes unnecessary to adjust the air supply amount, and it becomes possible to more Clean wafers easily.

進一步，若為本發明的晶圓洗淨方法，在杯部16上升時及杯部16下降時自艙室13上部的供氣部流往台座15下的排氣流路不會改變，因此變得能夠將艙室13內的壓力維持於固定。Further, if it is the wafer cleaning method of the present invention, when the cup portion 16 rises and when the cup portion 16 descends, the exhaust flow path flowing from the air supply portion on the upper part of the cabin 13 to the bottom of the pedestal 15 will not change, so it becomes The pressure in the chamber 13 can be kept constant.

以下舉出本發明的實施例而進一步具體地說明，然而本發明並不限定於此類。Hereinafter, examples of the present invention will be given and described in more detail, but the present invention is not limited thereto.

（實施例） 使用如圖1所示的本發明的晶圓洗淨處理裝置進行晶圓的洗淨。(example) Wafers are cleaned using the wafer cleaning processing apparatus of the present invention as shown in FIG. 1 .

使用已完成最終研磨及洗淨的5片晶圓預先進行表面的缺陷測量。進一步洗淨晶圓後，再次進行表面的缺陷測量，僅就相對於預先測量所增加的缺陷進行評估。測量係使用KLA-Tencor公司製的Surfscan SP5進行粒徑19nm以上的缺陷的測量。Surface defect measurement was performed in advance using 5 wafers that had been finished with final grinding and cleaning. After further cleaning of the wafer, defect measurements on the surface are performed again and only the defects that have increased compared to the pre-measurement are evaluated. As a measurement system, Surfscan SP5 manufactured by KLA-Tencor Corporation was used to measure defects having a particle diameter of 19 nm or more.

（比較例） 除了使用如圖2所示的過去的晶圓洗淨處理裝置進行晶圓的洗淨之外，與實施例同樣地使用5片晶圓進行測量。(comparative example) Measurements were performed using five wafers in the same manner as in the examples except that the wafers were cleaned using the conventional wafer cleaning processing apparatus shown in FIG. 2 .

實施例及比較例的洗淨後增加缺陷數的結果示於圖4。The results of increasing the number of defects after cleaning in Examples and Comparative Examples are shown in FIG. 4 .

如圖4所示，實施例係相對於比較例在洗淨後增加缺陷數為減少，乾燥時的顆粒增加係變得不會發生。As shown in FIG. 4 , compared to the comparative examples, the number of increased defects after cleaning was reduced, and the increase of particles during drying did not occur.

此外，將實施例及比較例的洗淨處理中杯部升降時的艙室內壓力變動的結果示於圖5。In addition, the results of pressure fluctuations in the chamber when the cup portion is raised and lowered in the washing process of the examples and the comparative examples are shown in FIG. 5 .

如圖5所示，比較例中杯部下降時艙室內的壓力會上升並維持在該狀態，然而實施例中，幾乎沒有艙室內的壓力變動。同樣地，杯部上升時，比較例中艙室內的壓力會下降且有大幅度的壓力變動，然而實施例中幾乎沒有發生壓力變動。As shown in FIG. 5 , in the comparative example, the pressure in the chamber rose and was maintained when the cup was lowered, but in the example, there was almost no change in the pressure in the chamber. Similarly, when the cup portion rises, the pressure in the chamber in the comparative example drops and there is a large pressure fluctuation, but there is almost no pressure fluctuation in the example.

另外，本發明並不限於上述的實施型態。上述實施型態為舉例說明，凡具有及本發明的申請專利範圍所記載之技術思想及實質上同一構成而產生相同的功效者，不論為何物皆包含在本發明的技術範圍內。In addition, the present invention is not limited to the above-mentioned implementation forms. The above-mentioned implementation forms are for illustration, and those who have the technical idea and substantially the same structure as recorded in the patent application scope of the present invention and produce the same effect, no matter what they are, are included in the technical scope of the present invention.

10‧‧‧晶圓洗淨處理裝置 11‧‧‧供氣部 12‧‧‧排氣部 13‧‧‧艙室 14‧‧‧晶圓 15‧‧‧台座 16‧‧‧杯部 17‧‧‧遮蔽板 20‧‧‧洗淨處理裝置 21‧‧‧供氣部 22‧‧‧排氣部 23‧‧‧艙室 24‧‧‧晶圓 25‧‧‧台座 26‧‧‧杯部 A‧‧‧排氣流路 B‧‧‧排氣流路 C‧‧‧排氣流路 D‧‧‧排氣流路 E‧‧‧排氣流路 10‧‧‧Wafer cleaning treatment device 11‧‧‧Air supply department 12‧‧‧Exhaust 13‧‧‧cabin 14‧‧‧Wafer 15‧‧‧pedestal 16‧‧‧Cup Department 17‧‧‧Shading board 20‧‧‧Cleaning treatment device 21‧‧‧Air supply department 22‧‧‧Exhaust 23‧‧‧cabin 24‧‧‧Wafer 25‧‧‧pedestal 26‧‧‧Cup Department A‧‧‧Exhaust flow path B‧‧‧Exhaust flow path C‧‧‧Exhaust flow path D‧‧‧Exhaust flow path E‧‧‧Exhaust flow path

圖1係表示本發明的晶圓洗淨處理裝置的範例的圖，其中（a）係為杯部上升時，（b）係為杯部下降時。 圖2係表示過去的晶圓洗淨處理裝置的範例的圖，其中（a）係為杯部上升時，（b）係為杯部下降時。 圖3係表示本發明的晶圓洗淨處理裝置中杯部上升時（a）及杯部下降時（b）的排氣流路（實施例）還有過去的晶圓洗淨處理裝置中杯部上升時（c）及杯部下降時（d）的排氣流路（比較例）的圖。 圖4係表示實施例及比較例中洗淨後增加缺陷數的圖。 圖5係表示實施例及比較例中艙室內壓力變動的圖。FIG. 1 is a diagram showing an example of the wafer cleaning processing apparatus of the present invention, wherein (a) is when the cup portion is raised, and (b) is when the cup portion is lowered. FIG. 2 is a view showing an example of a conventional wafer cleaning processing apparatus, wherein (a) is when the cup portion is raised, and (b) is when the cup portion is lowered. Fig. 3 shows the exhaust flow path (example) when the cup is raised (a) and when the cup is lowered (b) in the wafer cleaning processing device of the present invention, and the cup in the conventional wafer cleaning processing device Diagram of the exhaust flow path (comparative example) when the cup part is raised (c) and when the cup part is lowered (d). FIG. 4 is a graph showing an increase in the number of defects after cleaning in Examples and Comparative Examples. Fig. 5 is a graph showing pressure fluctuations in chambers in Examples and Comparative Examples.

10‧‧‧晶圓洗淨處理裝置 10‧‧‧Wafer cleaning treatment device

11‧‧‧供氣部 11‧‧‧Air supply department

12‧‧‧排氣部 12‧‧‧Exhaust

13‧‧‧艙室 13‧‧‧cabin

14‧‧‧晶圓 14‧‧‧Wafer

15‧‧‧台座 15‧‧‧pedestal

16‧‧‧杯部 16‧‧‧Cup Department

17‧‧‧遮蔽板 17‧‧‧Shading board

A‧‧‧排氣流路 A‧‧‧Exhaust flow path

B‧‧‧排氣流路 B‧‧‧Exhaust flow path

C‧‧‧排氣流路 C‧‧‧Exhaust flow path

Claims (7)

一種晶圓洗淨處理裝置，係將一晶圓支承於一台座之上，該台座係為配置於一艙室內且為得以旋轉，在使該晶圓旋轉的同時藉由一藥液而將該晶圓予以洗淨處理，其中，該艙室包含於艙室內將氣體予以供氣的一供氣部及將氣體予以排氣的一排氣部；該晶圓洗淨處理裝置包括：一杯部，係以將支承該晶圓的台座予以圍繞的方式配置，且得以上下移動而捕捉自經旋轉的晶圓甩飛的洗淨後的藥液；以及一遮蔽板，係配置於該杯部的外側，該遮蔽板具有中央孔形狀，且該遮蔽板為自該艙室的內壁往內側延伸，其中將在該杯部上升時藉由該台座及該杯部所形成的間隙的面積定為排氣截面積1；將在該杯部下降時藉由該台座及該杯部所形成的間隙的面積定為排氣截面積2；將在該杯部下降時藉由該遮蔽板及該杯部所形成的間隙的面積定為排氣截面積3的時候；該遮蔽板讓排氣截面積2及排氣截面積3的合計為排氣截面積1以上。 A wafer cleaning and processing device supports a wafer on a pedestal. The pedestal is arranged in a chamber and is rotated. The wafer is cleaned, wherein, the cabin includes a gas supply part for supplying gas in the cabin and an exhaust part for exhausting gas; the wafer cleaning treatment device includes: a cup part, which is disposed so as to surround the pedestal supporting the wafer, and to be able to move up and down to catch the cleaned chemical solution thrown off from the rotating wafer; and a shielding plate disposed outside the cup, The shielding plate has the shape of a central hole, and the shielding plate is extended from the inner wall of the cabin to the inside, where the area of the gap formed by the pedestal and the cup when the cup rises is defined as the exhaust section. Area 1; the area of the gap formed by the pedestal and the cup when the cup is lowered is defined as the exhaust cross-sectional area 2; the area formed by the shielding plate and the cup when the cup is lowered When the area of the gap is set as the exhaust cross-sectional area 3; the shielding plate allows the sum of the exhaust cross-sectional area 2 and the exhaust cross-sectional area 3 to be more than the exhaust cross-sectional area 1. 如請求項1所述之晶圓洗淨處理裝置，其中該遮蔽板設置於較該台座所支承的晶圓的高度位置為低的位置。 The wafer cleaning and processing apparatus according to claim 1, wherein the shielding plate is disposed at a position lower than the height of the wafer supported by the pedestal. 如請求項1所述之晶圓洗淨處理裝置，其中該遮蔽板具有該杯部的內徑以上外徑以下的內徑的孔。 The wafer cleaning processing apparatus according to claim 1, wherein the shielding plate has a hole with an inner diameter above the inner diameter of the cup portion and below the outer diameter. 如請求項1所述之晶圓洗淨處理裝置，其中該遮蔽板將在該杯部上升時藉由該遮蔽板及該杯部所形成的間隙予以完全地塞住。 The wafer cleaning processing apparatus as described in Claim 1, wherein the shielding plate is completely blocked by a gap formed by the shielding plate and the cup when the cup is raised. 如請求項1所述之晶圓洗淨處理裝置，其中該杯部係在該杯部下降時，於該台座及該杯部的上端之間具有間隙。 The wafer cleaning and processing apparatus according to claim 1, wherein when the cup is lowered, there is a gap between the pedestal and the upper end of the cup. 如請求項1所述之晶圓洗淨處理裝置，其中該杯部係於上部具有朝向內側的傾斜或R形狀。 The wafer cleaning processing device according to claim 1, wherein the upper part of the cup has an inward slope or an R shape. 一種晶圓洗淨方法，使用請求項1至6中任一項所述之晶圓洗淨處理裝置，在藉由該遮蔽板調整該艙室內的氣體的流動的同時洗淨晶圓。A wafer cleaning method, using the wafer cleaning processing device described in any one of Claims 1 to 6, cleaning the wafer while adjusting the flow of gas in the chamber through the shielding plate.
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