TWI775973B - Workpiece processing method - Google Patents

Workpiece processing method Download PDF

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TWI775973B
TWI775973B TW107137932A TW107137932A TWI775973B TW I775973 B TWI775973 B TW I775973B TW 107137932 A TW107137932 A TW 107137932A TW 107137932 A TW107137932 A TW 107137932A TW I775973 B TWI775973 B TW I775973B
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laser
workpiece
laser processing
forming step
groove forming
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TW107137932A
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Chinese (zh)
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TW201919122A (en
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熊澤哲
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02076—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

[課題]本發明提供一種工件加工方法，能夠降低在後續步驟中產生問題的風險。[解決手段]一種工件加工方法，具備：第1雷射加工槽形成步驟ST2，沿著第1切割道照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽；第2雷射加工槽形成步驟ST3，沿著第2切割道照射雷射光束以形成第2雷射加工槽；以及清潔步驟ST4，沿著第1切割道照射雷射光束，以除去在第1雷射加工槽形成步驟ST2中產生於第1雷射加工槽的槽緣且因實施第2雷射加工槽形成步驟ST3而在第1切割道與第2切割道的交叉部延伸於第2方向上的加工屑。[Problem] The present invention provides a workpiece processing method capable of reducing the risk of problems occurring in subsequent steps. [Solution] A workpiece machining method, comprising: a first laser machining groove forming step ST2 of irradiating a laser beam having an absorbing wavelength to a workpiece along a first scribe line to form a first laser machining groove; a second laser machining groove In step ST3 of forming a laser processing groove, a laser beam is irradiated along the second scribe line to form a second laser processing groove; and a cleaning step ST4, a laser beam is irradiated along the first dicing road to remove the first laser processing groove. Processing that is generated in the groove edge of the first laser-machined groove in the groove forming step ST2 and extends in the second direction at the intersection of the first scribe line and the second scribe line by performing the second laser-machined groove forming step ST3 crumbs.

Description

工件加工方法Workpiece processing method

本發明是關於一種工件加工方法，該工件具有多條切割道，所述多條切割道由在第1方向延伸的第1切割道，及在與第1方向交叉的第2方向上延伸的第2切割道所組成。The present invention relates to a method for processing a workpiece having a plurality of dicing lanes, the plurality of dicing lanes consisting of a first dicing lane extending in a first direction, and a first dicing lane extending in a second direction intersecting with the first direction 2 cutting tracks.

在延伸於工件的第1方向上的第1切割道照射雷射光束以形成第1雷射加工槽，且在延伸於與第1方向交叉的第2方向上的第2切割道照射雷射光束以形成第2雷射加工槽之雷射加工裝置（例如參閱專利文獻1）已被使用。 [習知技術文獻] [專利文獻]The first scribe line extending in the first direction of the workpiece is irradiated with a laser beam to form a first laser processing groove, and the second scribe line extending in the second direction intersecting with the first direction is irradiated with the laser beam A laser processing apparatus for forming the second laser processing groove (for example, refer to Patent Document 1) has been used. [Prior Art Documents] [Patent Documents]

[專利文獻1]日本特開2003-320466號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-320466

[發明所欲解決的課題] 然而，使用專利文獻1所示雷射加工裝置的工件加工方法，當沿著第1切割道照射雷射光束以形成第1雷射加工槽時，雷射加工所生成的加工屑會堆積在所形成的第1雷射加工槽的邊緣。而且，工件加工方法在沿著第2切割道照射雷射光束以形成第2雷射加工槽時，於第1切割道與第2切割道的交叉部，堆積在第1雷射加工槽的邊緣的加工屑會沿著第2切割道延伸，而造成加工屑堆積在交叉部。堆積在交叉部的加工屑，會在例如切割加工或電漿蝕刻（Plasma etching）等的雷射加工的後續步驟中產生問題。THE PROBLEM TO BE SOLVED BY THE INVENTION However, in the workpiece machining method using the laser machining apparatus disclosed in Patent Document 1, when the laser beam is irradiated along the first scribe line to form the first laser machining groove, the laser machining The generated machining chips accumulate on the edge of the first laser-machined groove formed. Furthermore, in the workpiece machining method, when the laser beam is irradiated along the second scribe line to form the second laser machined groove, the intersecting portion of the first scribe line and the second scribe line is deposited on the edge of the first laser machined groove The cutting chips from the 2nd pass will extend along the second kerf, causing the chips to accumulate at the intersection. Machining chips accumulated at the intersections cause problems in subsequent steps of laser processing such as dicing and plasma etching.

亦即，例如專利文獻1所揭示般，藉由雷射光束的照射形成雷射加工槽以斷開積層膜之後，以切割刀片分割工件的情況下，由於加工屑使得切割刀片蛇行，會產生突發的崩裂或裂痕，也有切割刀片損壞的風險。此外，在雷射加工後施予電漿蝕刻的情況下，由於加工屑阻礙了電漿蝕刻，會有產生局部地無法加工之區域的風險。That is, for example, as disclosed in Patent Document 1, when a workpiece is divided by a dicing blade after forming a laser-processed groove by irradiation of a laser beam to break the laminated film, the dicing blade zigzags due to machining chips, and protrusions occur. There is also a risk of damage to the cutting blade. In addition, when plasma etching is applied after laser processing, there is a risk that a region that cannot be processed locally is generated because machining debris hinders the plasma etching.

本發明係有鑑於此種問題點而提出，其目的在於提供一種能夠降低在後續步驟產生問題的風險之工件加工方法。The present invention has been made in view of such a problem, and an object thereof is to provide a workpiece processing method capable of reducing the risk of causing problems in subsequent steps.

[解決課題的技術手段] 為解決上述課題並達成目的，本發明之工件加工方法，係一種具有多條切割道之工件的加工方法，該多條切割道是由在第1方向延伸的第1切割道，及在與該第1方向交叉的第2方向上延伸的第2切割道所組成的；其特徵在於，具備：第1雷射加工槽形成步驟，沿著該第1切割道照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽；第2雷射加工槽形成步驟，在實施該第1雷射加工槽形成步驟之後，沿著該第2切割道照射該雷射光束以形成第2雷射加工槽；以及清潔步驟，在實施該第2雷射加工槽形成步驟之後，沿著該第1切割道照射該雷射光束，以除去在該第1雷射加工槽形成步驟中產生於該第1雷射加工槽的槽緣且因實施該第2雷射加工槽形成步驟而在該第1切割道與該第2切割道的交叉部延伸於該第2方向上的加工屑。[Technical Means for Solving the Problem] In order to solve the above-mentioned problems and achieve the object, a method for machining a workpiece of the present invention is a method for machining a workpiece having a plurality of scribe lines formed by a first line extending in a first direction. A dicing line and a second dicing line extending in a second direction intersecting with the first direction, comprising: a first laser processing groove forming step of irradiating a pair of laser beams along the first dicing line The workpiece has a laser beam of an absorbing wavelength to form a first laser processing groove; in the second laser processing groove forming step, after the first laser processing groove forming step is performed, the laser is irradiated along the second scribe line irradiating a beam to form a second laser processing groove; and a cleaning step, after performing the second laser processing groove forming step, irradiating the laser beam along the first scribe line to remove the first laser processing In the groove forming step, the groove edge is generated in the groove edge of the first laser processing groove and extends in the second direction at the intersection of the first scribe line and the second scribe line due to the second laser processing groove forming step. swarf on.

在前述工件加工方法中，在實施該第1雷射加工槽形成步驟前，具備將電漿蝕刻用保護膜覆蓋至工件的保護膜覆蓋步驟，藉由實施該第1雷射加工槽形成步驟、該第2雷射加工槽形成步驟及該清潔步驟使該第1切割道及該第2切割道露出，在實施該清潔步驟之後，也可以具備透過該電漿蝕刻用保護膜在工件上施予電漿蝕刻的電漿蝕刻步驟。In the above-mentioned workpiece machining method, before performing the first laser processing tank forming step, there is provided a protective film covering step of covering the workpiece with a protective film for plasma etching, and by performing the first laser processing tank forming step, The second laser processing groove forming step and the cleaning step expose the first scribe line and the second scribe line, and after the cleaning step is performed, a protective film for plasma etching may be applied to the workpiece through the Plasma etching step for plasma etching.

在前述工件加工方法中，於該清潔步驟中，與該第1雷射加工槽形成步驟及該第2雷射加工槽形成步驟相比，加工進給速度也可以較快。In the aforementioned workpiece machining method, in the cleaning step, the machining feed rate may be higher than that in the first laser-machined groove forming step and the second laser-machined groove forming step.

[發明功效] 本發明係發揮在後續步驟中能夠降低產生問題的風險之功效。[Effect of the Invention] The present invention exerts an effect of reducing the risk of causing problems in the subsequent steps.

參閱圖式並詳細說明為了實施本發明的實施例（實施方式）。本發明不為以下實施方式所記載之內容所限定。此外，對於以下所記載的構成要素，包含本領域的技術人員能輕易思及或實質相同者。再來，以下所記載的構成可以作適當的組合。又，在不超出本發明技術思想的範圍，可進行構成的各種省略、置換或變更。Embodiments (embodiments) for carrying out the present invention are described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the constituent elements described below include those that those skilled in the art can easily conceive or are substantially the same. Furthermore, the configurations described below can be appropriately combined. In addition, various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the technical idea of the present invention.

（實施方式1）。 根據圖式說明本發明實施方式1的工件加工方法。圖1係表示實施方式1之工件加工方法的加工對象之工件之一例的立體圖。圖2係表示實施方式1之工件加工方法的流程之流程圖。(Embodiment 1). The workpiece machining method according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing an example of a workpiece to be machined by the workpiece machining method according to Embodiment 1. FIG. FIG. 2 is a flowchart showing the flow of the workpiece machining method according to the first embodiment.

實施方式1之工件加工方法係圖1所示工件1的加工方法。在實施方式1中，工件1係以矽、藍寶石或砷化鎵等作為基板2的圓板狀半導體晶圓或光學元件晶圓。工件1是如圖1所示，具有由延伸在直線狀第1方向101的第1切割道3，以及延伸在與第1方向101交叉（在實施方式1中為正交）之直線狀第2方向102的第2切割道4所組成的多條切割道5，且具有在以多條切割道5所劃分的各區域中分別形成有元件6的正面7。The workpiece machining method of the first embodiment is a machining method of the workpiece 1 shown in FIG. 1 . In Embodiment 1, the workpiece 1 is a disk-shaped semiconductor wafer or an optical element wafer using silicon, sapphire, gallium arsenide, or the like as the substrate 2 . As shown in FIG. 1 , the workpiece 1 has a first scribe line 3 extending in a linear first direction 101 , and a linear second scribe line extending across (orthogonal in Embodiment 1) with the first direction 101 . A plurality of scribe lines 5 formed by the second scribe lines 4 in the direction 102 has a front surface 7 on which components 6 are formed in each region divided by the plurality of scribe lines 5 .

構成元件6的電路是由未圖示的低介電係數絕緣膜（以下稱作Low-k膜）所支撐。Low-k膜構成元件6，用作為層間絕緣膜，並且是對電漿蝕刻具有耐受性的膜。另外，在實施方式1中，工件1在切割道5的表面上也層積有Low-k膜，但本發明中，工件1也可以在切割道5的表面上不層積Low-k膜，而在切割道5露出基板2的正面。The circuit constituting the element 6 is supported by a not-shown low-k insulating film (hereinafter referred to as a Low-k film). The Low-k film constitutes the element 6, serves as an interlayer insulating film, and is a film resistant to plasma etching. In addition, in Embodiment 1, the workpiece 1 also has the Low-k film laminated on the surface of the dicing lane 5, but in the present invention, the workpiece 1 may not have the Low-k film laminated on the surface of the dicing lane 5, On the other hand, the front surface of the substrate 2 is exposed at the dicing lanes 5 .

此外，在實施方式1中，工件1在切割道5上部分地形成有未圖示的TEG（Test Elements Group，測試元件群）等的金屬膜。TEG是用於找出在元件6中產生的設計上或製造上的問題之評估用元件，在表面上具有作為電極墊的金屬膜。TEG根據工件1的種類等被任意配置。在實施方式1中，工件1在切割道5上形成有TEG等的金屬膜，但本發明也可以不在切割道5上形成TEG等金屬膜。。此外，在實施方式1中，工件1雖為半導體晶圓或光學元件晶圓等的晶圓，但在本發明中不限定為晶圓。In addition, in Embodiment 1, the workpiece 1 has a metal film such as a TEG (Test Elements Group), which is not shown, partially formed on the scribe line 5 . The TEG is an evaluation element for finding a design or manufacturing problem that occurs in the element 6, and has a metal film as an electrode pad on the surface. The TEG is arbitrarily arranged according to the type of the workpiece 1 and the like. In Embodiment 1, the workpiece 1 has a metal film such as TEG formed on the scribe line 5 , but the present invention may not have a metal film such as TEG formed on the scribe line 5 . . In addition, in Embodiment 1, although the workpiece|work 1 is a wafer, such as a semiconductor wafer or an optical element wafer, it is not limited to a wafer in this invention.

實施方式1之工件加工方法係圖1所示工件1的加工方法，在實施方式1中是將工件1分割為個個元件6的方法。工件加工方法是如圖2所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2，第2雷射加工槽形成步驟ST3，清潔步驟ST4，以及電漿蝕刻步驟ST5。The workpiece machining method of the first embodiment is a machining method of the workpiece 1 shown in FIG. 1 , and in the first embodiment, the workpiece 1 is divided into the individual elements 6 . As shown in FIG. 2 , the workpiece processing method includes a protective film covering step ST1, a first laser processing groove forming step ST2, a second laser processing groove forming step ST3, a cleaning step ST4, and a plasma etching step ST5.

（保護膜覆蓋步驟） 圖3係表示圖2所示工件加工方法之保護膜覆蓋步驟的側剖面圖。圖4係圖2所示工件加工方法之保護膜覆蓋步驟後的工件之剖面圖。(Protective Film Covering Step) FIG. 3 is a side sectional view showing a protective film covering step of the workpiece processing method shown in FIG. 2 . FIG. 4 is a cross-sectional view of the workpiece after the protective film covering step of the workpiece processing method shown in FIG. 2 .

保護膜覆蓋步驟ST1是在實施第1雷射加工槽形成步驟ST2之前，將對電漿蝕刻具有耐受性的電漿蝕刻用保護膜10覆蓋至工件1的正面7之步驟。在實施方式1中，於保護膜覆蓋步驟ST1，將外周緣被黏貼在環狀框架12上的黏著膠帶13黏貼在工件1的背面8上。如圖3所示，在實施方式1中，於保護膜覆蓋步驟ST1，使保護膜覆蓋裝置20的殼體21內之離心旋轉台22吸附保持工件1的正面7之背側的背面8，一邊使離心旋轉台22繞軸心旋轉，一邊在工件1的正面7上從噴嘴23塗佈水溶性的保護膜溶液11。水溶性的保護膜溶液11包含聚乙烯醇（polyvinyl alcohol：PVA）或聚乙烯吡咯烷酮（polyvinyl pyrrolidone：PVP）等對電漿蝕刻具有耐受性且水溶性的液狀樹脂等。The protective film covering step ST1 is a step of covering the front surface 7 of the workpiece 1 with the protective film 10 for plasma etching, which is resistant to plasma etching, before the first laser processing groove forming step ST2 is performed. In Embodiment 1, in the protective film covering step ST1 , the adhesive tape 13 whose outer peripheral edge is attached to the annular frame 12 is attached to the back surface 8 of the workpiece 1 . As shown in FIG. 3 , in Embodiment 1, in the protective film covering step ST1 , the centrifugal turntable 22 in the casing 21 of the protective film covering device 20 is sucked and held by the back surface 8 of the back side of the front surface 7 of the workpiece 1 . The water-soluble protective film solution 11 is applied from the nozzle 23 on the front surface 7 of the workpiece 1 while the centrifugal turntable 22 is rotated around the axis. The water-soluble protective film solution 11 contains a water-soluble liquid resin or the like having resistance to plasma etching, such as polyvinyl alcohol (PVA) or polyvinyl pyrrolidone (PVP).

在保護膜覆蓋步驟ST1中，將水溶性的保護膜溶液11塗佈在工件1的正面7上之後，使保護膜溶液11硬化，如圖4所示，將保護膜溶液11硬化所構成的電漿蝕刻用保護膜10覆蓋在工件1的整個正面7。在實施方式1中，電漿蝕刻用保護膜10因為是保護膜溶液11硬化所構成，所以是水溶性的。當將電漿蝕刻用保護膜10覆蓋在工件1的整個正面7時，工件加工方法進入第1雷射加工槽形成步驟ST2。In the protective film covering step ST1, after the water-soluble protective film solution 11 is coated on the front surface 7 of the workpiece 1, the protective film solution 11 is cured. As shown in FIG. The protective film 10 for slurry etching covers the entire front surface 7 of the workpiece 1 . In Embodiment 1, the protective film 10 for plasma etching is water-soluble because the protective film solution 11 is hardened. When the entire front surface 7 of the workpiece 1 is covered with the protective film 10 for plasma etching, the workpiece machining method proceeds to the first laser machining groove forming step ST2.

（第1雷射加工槽形成步驟） 圖5係表示在圖2所示工件加工方法之第1雷射加工槽形成步驟等所用的雷射加工裝置之立體圖。圖6係表示圖2所示工件加工方法之第1雷射加工槽形成步驟的側剖面圖。圖7係表示圖2所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。(First laser processing groove forming step) FIG. 5 is a perspective view showing a laser processing apparatus used in the first laser processing groove forming step and the like of the workpiece processing method shown in FIG. 2 . FIG. 6 is a side sectional view showing a first step of forming a laser processing groove in the method for machining the workpiece shown in FIG. 2 . 7 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece machining method shown in FIG. 2 .

第1雷射加工槽形成步驟ST2，是沿第1切割道3照射對工件1具有吸收性波長的雷射光束200以形成第1雷射加工槽14的步驟。在第1雷射加工槽形成步驟ST2中，圖5所示雷射加工裝置30的控制單元38將正面7被電漿蝕刻用保護膜10覆蓋的工件1之背面8側吸引保持在卡盤台31上，並且以夾具32夾持環狀框架12。在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38以攝像單元33拍攝保持在卡盤台31上的工件1之正面7，在完成進行工件1與雷射光束照射單元34對位之對準後，使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。The first laser processing groove forming step ST2 is a step of forming the first laser processing groove 14 by irradiating the laser beam 200 having a wavelength absorbing to the workpiece 1 along the first scribe line 3 . In the first laser processing tank forming step ST2, the control unit 38 of the laser processing apparatus 30 shown in FIG. 5 sucks and holds the back surface 8 side of the workpiece 1 whose front surface 7 is covered with the plasma etching protective film 10 on the chuck table. 31 , and clamp the ring frame 12 with the clamp 32 . In the first laser processing groove forming step ST2, the control unit 38 of the laser processing apparatus 30 uses the imaging unit 33 to photograph the front surface 7 of the workpiece 1 held on the chuck table 31, and after the completion of the irradiation of the workpiece 1 and the laser beam After the unit 34 is aligned, the rotating unit 35 rotates the chuck table 31 around the axis parallel to the vertical direction (Z-axis direction) so that the first scribe line 3 is parallel to the machining feed direction, that is, the X-axis direction.

在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38使X軸移動單元36在X軸方向上移動卡盤台31，使Y軸移動單元37在Y軸方向上移動卡盤台31，且一邊使第1切割道3與雷射光束照射單元34沿著第1切割道3相對地移動，一邊如圖6所示從雷射光束照射單元34向第1切割道3寬度方向之中央照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38在第1切割道3寬度方向之中央施予燒蝕加工，以除去第1切割道3寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖7以緊密的平行斜線所示，沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1雷射加工槽14。In the first laser processing groove forming step ST2, the control unit 38 of the laser processing apparatus 30 moves the X-axis moving unit 36 to the X-axis direction of the chuck table 31 and moves the Y-axis moving unit 37 to the Y-axis direction The chuck table 31 moves from the laser beam irradiation unit 34 to the first scribe lane 3 as shown in FIG. The center in the width direction is irradiated with the laser beam 200 having an absorbing wavelength (355 nm in Embodiment 1) to the workpiece 1 . In the first laser processing groove forming step ST2 , the control unit 38 of the laser processing apparatus 30 performs ablation processing on the center of the width direction of the first scribe line 3 to remove electricity in the center of the width direction of the first scribe line 3 . The protective film 10 for paste etching, metal films such as Low-k film and TEG, as shown by the close parallel oblique lines in FIG. The groove 14 is machined.

此外，在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38在第1切割道3的第1雷射加工槽14之寬度方向兩邊的槽緣上沿著第1切割道3的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑301。再者，加工屑301係形成為從工件1的正面凸起，因為由前述碎片所構成，具有對電漿蝕刻的耐受性。另外，在實施方式1中，於第1雷射加工槽形成步驟ST2，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以500mm/秒之固定速度沿著X軸方向移動卡盤台31。當在工件1的所有第1切割道3上形成第1雷射加工槽14時，工件加工方法進入第2雷射加工槽形成步驟ST3。In addition, in the first laser processing groove forming step ST2 , the control unit 38 of the laser processing apparatus 30 makes a first cut along the groove edges on both sides in the width direction of the first laser processing groove 14 of the first scribe line 3 . In the longitudinal direction of the track 3, machining chips 301 composed of chips generated during ablation machining are formed. In addition, the machining chips 301 are formed so as to protrude from the front surface of the workpiece 1, and since they are composed of the aforementioned fragments, they have resistance to plasma etching. In addition, in the first embodiment, in the first laser processing groove forming step ST2 , the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and moves the X-axis moving unit 36 to 3 W (watts). The chuck table 31 was moved along the X-axis direction at a fixed speed of 500 mm/sec. When the first laser processing grooves 14 are formed on all the first scribe lines 3 of the workpiece 1, the workpiece processing method proceeds to the second laser processing groove forming step ST3.

（第2雷射加工槽形成步驟） 圖8係表示圖2所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。(Second laser processing groove forming step) FIG. 8 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece processing method shown in FIG. 2 .

第2雷射加工槽形成步驟ST3，是在實施第1雷射加工槽形成步驟ST2之後，沿第2切割道4照射雷射光束200以形成第2雷射加工槽15的步驟。在實施方式1中，於第2雷射加工槽形成步驟ST3，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第2切割道4與加工進給方向即X軸方向平行。The second laser processing groove forming step ST3 is a step of forming the second laser processing groove 15 by irradiating the laser beam 200 along the second scribe line 4 after the first laser processing groove forming step ST2 is performed. In Embodiment 1, in the second laser processing tank forming step ST3, the control unit 38 of the laser processing apparatus 30 rotates the chuck table 31 by the rotation unit 35 around the axis parallel to the vertical direction (Z-axis direction), and The second scribe line 4 is made parallel to the X-axis direction, which is the machining feed direction.

在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第2切割道4相對地移動第2切割道4與雷射光束照射單元34，一邊從雷射光束照射單元34向第2切割道4寬度方向之中央照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在第2切割道4寬度方向之中央施予燒蝕加工，以除去第2切割道4寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖8以緊密的平行斜線所示，沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2雷射加工槽15。In the second laser processing groove forming step ST3 , the control unit 38 of the laser processing apparatus 30 relatively moves the second scribe lane 4 and the Y-axis movement unit 37 along the second scribe lane 4 while causing the X-axis moving unit 36 and the Y-axis moving unit 37 The laser beam irradiation unit 34 irradiates the laser beam 200 having an absorbing wavelength (355 nm in Embodiment 1) to the workpiece 1 from the laser beam irradiation unit 34 toward the center in the width direction of the second scribe line 4 . In the second laser processing groove forming step ST3 , the control unit 38 of the laser processing apparatus 30 performs ablation processing on the center in the width direction of the second scribe line 4 to remove electricity in the center in the width direction of the second scribe line 4 . The protective film 10 for paste etching, the metal film such as the Low-k film and the TEG film, as shown by the close parallel oblique lines in FIG. The groove 15 is machined.

此外，在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在第2切割道4的第2雷射加工槽15之寬度方向兩邊的槽緣上沿著第2切割道4的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑401。此外，在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在形成第2雷射加工槽15時，將在第1雷射加工槽形成步驟ST2形成的加工屑301之中位於切割道3、4彼此的交叉部9之部分303，如圖8所示在第2切割道4上從第1雷射加工槽14寬度方向的端部向中央部延伸。In addition, in the second laser processing groove forming step ST3 , the control unit 38 of the laser processing apparatus 30 makes a second cut along the groove edges on both sides of the second laser processing groove 15 in the width direction of the second scribe line 4 . In the longitudinal direction of the track 4, machining chips 401 composed of chips generated during ablation machining are formed. In addition, in the second laser processing groove forming step ST3, the control unit 38 of the laser processing apparatus 30 disposes the processing waste 301 formed in the first laser processing groove forming step ST2 when the second laser processing groove 15 is formed. Among them, the portion 303 located at the intersection 9 of the scribe lines 3 and 4 extends from the end portion in the width direction of the first laser processing groove 14 to the center portion on the second scribe line 4 as shown in FIG. 8 .

另外，加工屑301的部分303係相當於，在第1雷射加工槽形成步驟ST2中產生於第1雷射加工槽14的槽緣，且通過實施第2雷射加工槽形成步驟ST3而在第1切割道3與第2切割道4的交叉部9向第2方向102延伸的加工屑。此外，加工屑401是形成為從工件1的正面7凸起。再者，在實施方式1中，於第2雷射加工槽形成步驟ST3，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以500mm/秒之固定速度沿著X軸方向移動卡盤台31。當在工件1的所有第2切割道4上形成第2雷射加工槽15時，工件加工方法進入清潔步驟ST4。In addition, the portion 303 of the machining debris 301 corresponds to the groove edge generated in the first laser-machined groove 14 in the first laser-machined groove forming step ST2, and is formed in the second laser-machined groove forming step ST3 by performing the second laser-machined groove forming step ST3. Machining chips extending in the second direction 102 at the intersection 9 of the first scribe line 3 and the second scribe line 4 . Further, the machining chips 401 are formed to protrude from the front surface 7 of the workpiece 1 . Furthermore, in the first embodiment, in the second laser processing groove forming step ST3 , the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and moves the X-axis moving unit 36 The chuck table 31 was moved in the X-axis direction at a fixed speed of 500 mm/sec. When the second laser processing grooves 15 are formed in all the second scribe lines 4 of the workpiece 1, the workpiece processing method proceeds to the cleaning step ST4.

（清潔步驟） 圖9係表示圖2所示工件加工方法之清潔步驟後的工件之正面的一部分之俯視圖。(Cleaning Step) FIG. 9 is a plan view showing a part of the front surface of the workpiece after the cleaning step of the workpiece processing method shown in FIG. 2 .

清潔步驟ST4，是在實施第2雷射加工槽形成步驟ST3之後，沿第1切割道3照射雷射光束200以除去前述加工屑301之部分303的步驟。在實施方式1中，於清潔步驟ST4，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。The cleaning step ST4 is a step of irradiating the laser beam 200 along the first scribe line 3 to remove the portion 303 of the machining chips 301 after the second laser processing groove forming step ST3 is performed. In the first embodiment, in the cleaning step ST4 , the control unit 38 of the laser processing apparatus 30 rotates the chuck table 31 by the rotation unit 35 around the axis parallel to the vertical direction (Z-axis direction), and causes the first scribe line 3 to rotate. It is parallel to the machining feed direction, that is, the X-axis direction.

在清潔步驟ST4中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第1切割道3相對地移動第1切割道3與雷射光束照射單元34，一邊從雷射光束照射單元34向形成在第1切割道3寬度方向之中央的第1雷射加工槽14照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。清潔步驟ST4中，雷射加工裝置30的控制單元38在形成於第1切割道3寬度方向之中央的第1雷射加工槽14內施予燒蝕加工，如圖9所示，除去加工屑301的前述部分303。In the cleaning step ST4 , the control unit 38 of the laser processing apparatus 30 relatively moves the first scribe line 3 and the laser beam irradiation unit 34 along the first scribe line 3 while causing the X-axis moving unit 36 and the Y-axis moving unit 37 , while irradiating the first laser processing groove 14 formed in the center of the width direction of the first scribe line 3 from the laser beam irradiation unit 34 with a laser beam having an absorbing wavelength (355 nm in the first embodiment) to the workpiece 1 200. In the cleaning step ST4, the control unit 38 of the laser processing apparatus 30 performs ablation processing in the first laser processing groove 14 formed in the center of the first scribe line 3 in the width direction, as shown in FIG. 9, to remove processing debris The aforementioned portion 303 of 301 .

如此一來，實施方式1的工件加工方法，藉由形成第1雷射加工槽14及第2雷射加工槽15，並除去加工屑301的部分303，以實施第1雷射加工槽形成步驟ST2、第2雷射加工槽形成步驟ST3及清潔步驟ST4的方式來使位在第1切割道3及第2切割道4兩者的基板2露出。In this way, in the workpiece machining method according to the first embodiment, the first laser-machined groove forming step is performed by forming the first laser-machined groove 14 and the second laser-machined groove 15 and removing the portion 303 of the machining chips 301 . The substrate 2 positioned on both the first scribe line 3 and the second scribe line 4 is exposed in the manner of ST2 , the second laser processing groove forming step ST3 and the cleaning step ST4 .

再者，在實施方式1中，於清潔步驟ST4，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以較第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3高速的600mm/秒之固定速度，沿著X軸方向移動卡盤台31。如此一來，在實施方式1的工件加工方法之清潔步驟ST4中，加工進給速度即卡盤台31的X軸方向的移動速度，與第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3相比較為快速。另外，在實施方式1中，於雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4，雖使用圖5所示雷射加工裝置30，但在雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4中所使用的雷射加工裝置，並不限定為圖5所示者。當雷射光束200照射到工件的所有第1切割道3之第1雷射加工槽14時，工件加工方法進入電漿蝕刻步驟ST5。Furthermore, in the first embodiment, in the cleaning step ST4 , the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (Watts), and makes the X-axis moving unit 36 higher than that of the first laser In the machining groove forming step ST2 and the second laser machining groove forming step ST3, the chuck table 31 is moved along the X-axis direction at a fixed speed of 600 mm/sec. In this way, in the cleaning step ST4 of the workpiece machining method according to the first embodiment, the machining feed speed, that is, the moving speed of the chuck table 31 in the X-axis direction, and the first laser machining groove forming step ST2 and the second laser The machining groove forming step ST3 is relatively quick. In addition, in Embodiment 1, the laser processing apparatus 30 shown in FIG. 5 is used in the laser processing tank forming steps ST2 and ST3 and the cleaning step ST4, but in the laser processing tank forming steps ST2 and ST3 and the cleaning step ST4 The laser processing apparatus used in this is not limited to the one shown in FIG. 5 . When the laser beam 200 is irradiated to the first laser processing grooves 14 of all the first scribe lines 3 of the workpiece, the workpiece processing method proceeds to the plasma etching step ST5.

又，在實施方式1的雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4所用的前述雷射加工裝置30，具備：卡盤台31，夾具部32，攝像單元33，雷射光束照射單元34，旋轉單元35，X軸移動單元36，Y軸移動單元37，以及控制單元38。控制單元38是分別控制雷射加工裝置30的各個構成要素，以使雷射加工裝置30對工件1實施加工動作者。另外，控制單元38為電子計算機，具有：運算處理裝置，其具有如CPU（central processing unit，中央處理器）的微處理器；記憶裝置，其具有如ROM（read only memory，唯讀記憶體）或RAM（random access memory，隨機存取記憶體）的記憶體；以及輸入輸出介面裝置。控制單元38的運算處理裝置，根據儲存在記憶裝置的電腦程式實施運算處理，將用於控制雷射加工裝置30的控制訊號，透過輸入輸出介面裝置輸出至雷射加工裝置30的上述構成要素。控制單元38係連接至：未圖示的顯示單元，其由顯示加工動作的狀態或圖像的液晶顯示裝置等所構成；未圖示的輸入單元，其用於操作員將加工內容資訊等登錄時；以及未圖示的通知單元。輸入單元係由設於顯示單元的觸控面板及鍵盤等外部輸入裝置的至少其中之一所構成。In addition, the laser processing apparatus 30 used in the laser processing groove forming steps ST2 and ST3 and the cleaning step ST4 in the first embodiment includes a chuck table 31 , a jig unit 32 , an imaging unit 33 , and a laser beam irradiation unit 34 . , the rotation unit 35 , the X-axis moving unit 36 , the Y-axis moving unit 37 , and the control unit 38 . The control unit 38 controls the respective components of the laser processing apparatus 30 so that the laser processing apparatus 30 performs processing operations on the workpiece 1 . In addition, the control unit 38 is an electronic computer, and has: an arithmetic processing device, which has a microprocessor such as a CPU (central processing unit, central processing unit); a memory device, which has a ROM (read only memory, read only memory) Or RAM (random access memory, random access memory) memory; and input and output interface devices. The arithmetic processing device of the control unit 38 performs arithmetic processing according to the computer program stored in the memory device, and outputs the control signal for controlling the laser processing device 30 to the above-mentioned constituent elements of the laser processing device 30 through the input/output interface device. The control unit 38 is connected to: a display unit (not shown), which is constituted by a liquid crystal display device or the like that displays the state or image of the machining operation, and an input unit (not shown) that is used by an operator to log in the information of the machining content and the like. time; and a notification unit not shown. The input unit is composed of at least one of external input devices such as a touch panel and a keyboard provided in the display unit.

（電漿蝕刻步驟） 圖10係表示在圖2所示工件加工方法之電漿蝕刻步驟所用的蝕刻裝置的構成之剖面圖。(Plasma Etching Step) FIG. 10 is a cross-sectional view showing the configuration of an etching apparatus used in the plasma etching step of the workpiece processing method shown in FIG. 2 .

電漿蝕刻步驟ST5，係在實施清潔步驟ST4之後，透過電漿蝕刻用保護膜10在工件1上施予電漿蝕刻之步驟。在電漿蝕刻步驟ST5中，圖10所示蝕刻裝置40打開閘閥41，將工件1從搬入搬出口42搬入至腔室43內，透過黏著膠帶13將工件1的背面8側靜電保持在靜電卡盤（ESC：Electrostatic chuck）44上。另外，在將工件1靜電保持在靜電卡盤44之時，透過整合器45將高頻電源46的電力供給至靜電卡盤44的電極47。The plasma etching step ST5 is a step of performing plasma etching on the workpiece 1 through the protective film 10 for plasma etching after the cleaning step ST4 is performed. In the plasma etching step ST5 , the etching apparatus 40 shown in FIG. 10 opens the gate valve 41 , the workpiece 1 is loaded into the chamber 43 from the loading and unloading port 42 , and the back surface 8 side of the workpiece 1 is electrostatically held on the electrostatic card through the adhesive tape 13 plate (ESC: Electrostatic chuck) 44. In addition, when the workpiece 1 is electrostatically held on the electrostatic chuck 44 , the electric power of the high-frequency power supply 46 is supplied to the electrode 47 of the electrostatic chuck 44 through the integrator 45 .

接著，在電漿蝕刻步驟ST5中，蝕刻裝置40通過排氣管48藉由排氣裝置49將腔室43減壓，並使腔室43內的壓力成為例如0.10~0.15Pa，同時使靜電卡盤44的溫度成為不會從黏著膠帶13產生氣體的溫度，例如設為70℃以下，蝕刻露出在切割道5的基板2，並交替反覆進行使雷射加工槽14、15向背面8深入的蝕刻步驟以及接在蝕刻步驟之後使薄膜堆積在雷射加工槽14、15之內表面的薄膜堆積步驟。再者，薄膜堆積步驟後的蝕刻步驟，除去雷射加工槽14、15槽底的薄膜以蝕刻雷射加工槽14、15的槽底。如此一來，電漿蝕刻步驟ST5是以所謂的博世法（Bosch法）電漿蝕刻工件1。Next, in the plasma etching step ST5, the etching device 40 depressurizes the chamber 43 through the exhaust pipe 48 and the exhaust device 49, and the pressure in the chamber 43 is, for example, 0.10 to 0.15 Pa, and the electrostatic The temperature of the disc 44 is a temperature at which no gas is generated from the adhesive tape 13 , for example, 70° C. or lower, and the substrate 2 exposed on the scribe line 5 is etched, and the laser processing grooves 14 and 15 are alternately and repeatedly performed to penetrate the back surface 8 . An etching step and a thin film deposition step of depositing a thin film on the inner surfaces of the laser processing grooves 14 and 15 after the etching step. Furthermore, in the etching step after the thin film deposition step, the thin films at the bottoms of the laser processing grooves 14 and 15 are removed to etch the groove bottoms of the laser processing grooves 14 and 15 . In this way, the plasma etching step ST5 is plasma etching the workpiece 1 by the so-called Bosch method.

另外，在蝕刻步驟中，蝕刻裝置40使來自氣體供給部50的蝕刻氣體即SF6 氣體透過氣體配管51及氣體導入口52從氣體噴出頭53的氣體吐出部54噴射。接著，蝕刻裝置40在已供給產生電漿用的SF６氣體之狀態下，透過整合器55從高頻電源56對氣體噴出頭53施加維持製造電漿的高頻電力，並從高頻電源56對靜電卡盤44施加用於吸引離子的高頻電力。藉此，在靜電卡盤44與氣體噴出頭53之間的空間中，產生由SF6 氣體所組成具有各同向性的電漿，該電漿被吸引至工件1的基板2，蝕刻雷射加工槽14、15的槽底，並使雷射加工槽14、15向工件1的背面8深入。In addition, in the etching step, the etching apparatus 40 injects SF 6 gas, which is an etching gas from the gas supply unit 50 , through the gas piping 51 and the gas inlet 52 from the gas discharge unit 54 of the gas discharge head 53 . Next, in the state in which the SF6 gas for plasma generation has been supplied to the etching apparatus 40, the high-frequency power for maintaining the plasma produced is applied to the gas ejection head 53 from the high-frequency power supply 56 through the integrator 55, and the high-frequency power supply 56 The electrostatic chuck 44 applies high-frequency power for attracting ions. Thereby, isotropic plasma composed of SF 6 gas is generated in the space between the electrostatic chuck 44 and the gas ejection head 53 , the plasma is attracted to the substrate 2 of the workpiece 1 , and the etching laser The groove bottoms of the grooves 14 and 15 are machined, and the laser-machined grooves 14 and 15 are made to penetrate into the back surface 8 of the workpiece 1 .

此外，在薄膜堆積步驟中，蝕刻裝置40從氣體供給部50將堆積性氣體即C4 F8 氣體，從氣體噴出頭53的多個氣體吐出部54向保持在靜電卡盤44上的工件1噴出。接著，蝕刻裝置40在已供給產生電漿用的C4 F8 氣體之狀態下，從高頻電源56對氣體噴出頭53施加維持製造電漿的高頻電力，並從高頻電源56對靜電卡盤44施加用於吸引離子的高頻電力。藉此，在靜電卡盤44與氣體噴出頭53之的空間中，產生由C4 F8 氣體組成的電漿，該電漿被吸引至工件1的基板2，並使薄膜堆積在雷射加工槽14、15的內表面。In addition, in the thin film deposition step, the etching apparatus 40 supplies C 4 F 8 gas, which is a deposition gas, from the gas supply unit 50 to the workpiece 1 held on the electrostatic chuck 44 from the plurality of gas discharge units 54 of the gas discharge head 53 . squirting. Next, the etching apparatus 40 applies the high-frequency power to the gas ejection head 53 from the high-frequency power source 56 to maintain the production of the plasma in a state in which the C 4 F 8 gas for plasma generation has been supplied, and the high-frequency power source 56 applies static electricity to the gas ejection head 53 . The chuck 44 applies high-frequency power for attracting ions. As a result, plasma composed of C 4 F 8 gas is generated in the space between the electrostatic chuck 44 and the gas ejection head 53 , the plasma is attracted to the substrate 2 of the workpiece 1 , and the thin film is deposited on the laser processing The inner surfaces of the grooves 14, 15.

於電漿蝕刻步驟ST5，蝕刻裝置40根據雷射加工槽14、15的深度及工件1的厚度，預先設定蝕刻步驟及薄膜堆積步驟重複的次數。在電漿蝕刻步驟ST5中，經反覆進行了預先設定次數的蝕刻步驟及薄膜堆積步驟的工件1，雷射加工槽14、15到達背面80側，並被分割為個個元件6。再者，在實施方式1中，於電漿蝕刻步驟ST5，雖使用圖10所示蝕刻裝置40，但在本發明中，用於電漿蝕刻步驟ST5的蝕刻裝置並不限定為圖10所示者。工件加工方法在將工件1分割為個個元件6時結束。另外之後，工件1在進行例如清洗水被供給至正面7等，電漿蝕刻用保護膜10被除去之後，個個元件6被從黏著膠帶13上拾取。In the plasma etching step ST5 , the etching device 40 presets the number of repetitions of the etching step and the thin film deposition step according to the depths of the laser processing grooves 14 and 15 and the thickness of the workpiece 1 . In the plasma etching step ST5 , the workpiece 1 having repeatedly performed the etching step and the thin film deposition step for a predetermined number of times, the laser processing grooves 14 and 15 reach the back surface 80 side and are divided into the individual elements 6 . Furthermore, in the first embodiment, the etching apparatus 40 shown in FIG. 10 is used in the plasma etching step ST5, but in the present invention, the etching apparatus used in the plasma etching step ST5 is not limited to that shown in FIG. 10 . By. The workpiece machining method ends when the workpiece 1 is divided into individual components 6 . In addition, after the workpiece 1 is, for example, supplied with cleaning water to the front surface 7 and the protective film 10 for plasma etching is removed, the individual components 6 are picked up from the adhesive tape 13 .

實施方式1的工件加工方法，是在實施第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3之後，藉由實施清潔步驟ST4，除去加工屑301的部分303。因此，實施方式1的工件加工方法，在清潔步驟ST4的後續步驟之電漿蝕刻步驟ST5中，能夠抑制加工屑301的部分303對電漿蝕刻的阻礙。其結果，工件加工方法能夠降低在清潔步驟ST4的後續步驟中產生問題的風險。In the workpiece machining method according to the first embodiment, after the first laser machining groove forming step ST2 and the second laser machining groove forming step ST3 are carried out, the cleaning step ST4 is carried out to remove the portion 303 of the machining chips 301 . Therefore, in the workpiece machining method of the first embodiment, in the plasma etching step ST5 , which is the subsequent step of the cleaning step ST4 , the portion 303 of the machining debris 301 can suppress the inhibition of the plasma etching. As a result, the workpiece processing method can reduce the risk of causing problems in the steps subsequent to the cleaning step ST4.

此外，實施方式1的工件加工方法，是在保護膜覆蓋步驟ST1中在工件1的正面7上覆蓋電漿蝕刻用保護膜10，在雷射加工槽形成步驟ST2、ST3及清潔步驟ST4中使切割道5的基板2露出，並在電漿蝕刻步驟ST5中對工件1施予電漿蝕刻。因此，工件加工方法能夠將工件1分割為個個元件6。In addition, in the workpiece processing method according to the first embodiment, the protective film 10 for plasma etching is covered on the front surface 7 of the workpiece 1 in the protective film covering step ST1, and the laser processing groove forming steps ST2 and ST3 and the cleaning step ST4 are used The substrate 2 of the scribe line 5 is exposed, and the workpiece 1 is subjected to plasma etching in the plasma etching step ST5. Therefore, the workpiece processing method can divide the workpiece 1 into individual elements 6 .

又，實施方式1的工件加工方法，因為在清潔步驟ST4中卡盤台31的移動速度比雷射加工槽形成步驟ST2、ST3要快，即使實施清潔步驟ST4，也能夠抑制工件1加工所需時間的長時間化。In addition, in the workpiece machining method of the first embodiment, since the moving speed of the chuck table 31 in the cleaning step ST4 is faster than that in the laser machining groove forming steps ST2 and ST3, even if the cleaning step ST4 is performed, it is possible to suppress the need for machining the workpiece 1. prolongation of time.

（實施方式2） 根據圖式說明本發明實施方式2的工件加工方法。圖11係表示實施方式2之工件加工方法的流程之流程圖。圖12係表示圖11所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。圖13係表示圖11所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。圖14係表示圖11所示工件加工方法之第1寬幅槽形成步驟後的工件之正面的一部分之俯視圖。圖15係表示圖11所示工件加工方法之第2寬幅槽形成步驟後的工件之正面的一部分之俯視圖。另外，圖11到圖15中，與實施方式1相同部分標記相同符號並省略說明。(Embodiment 2) A workpiece machining method according to Embodiment 2 of the present invention will be described with reference to the drawings. 11 is a flowchart showing the flow of the workpiece machining method according to the second embodiment. FIG. 12 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece machining method shown in FIG. 11 . 13 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece machining method shown in FIG. 11 . FIG. 14 is a plan view showing a part of the front surface of the workpiece after the first wide-width groove forming step of the workpiece machining method shown in FIG. 11 . FIG. 15 is a plan view showing a part of the front surface of the workpiece after the second wide-width groove forming step of the workpiece machining method shown in FIG. 11 . In addition, in FIGS. 11 to 15 , the same parts as those in the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

實施方式2的工件加工方法是如圖11所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2-2，第2雷射加工槽形成步驟ST3-2，作為清潔步驟的第1寬幅槽形成步驟ST6及第2寬幅槽形成步驟ST7，以及電漿蝕刻步驟ST5。As shown in FIG. 11 , the workpiece machining method according to the second embodiment includes: a protective film covering step ST1, a first laser processing groove forming step ST2-2, a second laser processing groove forming step ST3-2, and as a cleaning step The first wide-width groove forming step ST6, the second wide-width groove forming step ST7, and the plasma etching step ST5.

實施方式2的工件加工方法之第1雷射加工槽形成步驟ST2-2，是與實施方式1相同，沿第1切割道3照射對工件1具有吸收性波長的雷射光束200以形成第1雷射加工槽14-2的步驟。在實施方式2中，於第1雷射加工槽形成步驟ST2-2，雷射加工裝置30的控制單元38在第1切割道3寬度方向之兩側部施予燒蝕加工，以除去第1切割道3寬度方向之兩側部各別的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖12以緊密的平行斜線所示，沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1雷射加工槽14-2。在實施方式2的工件加工方法之第1雷射加工槽形成步驟ST2-2中，在第1切割道3寬度方向的兩側部各別形成較實施方式1的第1雷射加工槽14寬度窄的第1雷射加工槽14-2。The first laser processing groove forming step ST2-2 of the workpiece machining method of the second embodiment is the same as that of the first embodiment, in which the laser beam 200 having an absorbing wavelength to the workpiece 1 is irradiated along the first scribe line 3 to form the first laser beam 200. Step of laser machining groove 14-2. In the second embodiment, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing apparatus 30 performs ablation processing on both sides of the first scribe line 3 in the width direction to remove the first The protective film 10 for plasma etching, the metal film such as the Low-k film and the TEG film on both sides in the width direction of the scribe line 3 are shown as close parallel oblique lines in FIG. 12 along the length of the first scribe line 3 A first laser processing groove 14 - 2 recessed from the front surface of the substrate 2 is formed in the direction. In the first laser processing groove forming step ST2 - 2 of the workpiece processing method of the second embodiment, the width of the first laser processing groove 14 in the first embodiment is formed on both sides of the first scribe line 3 in the width direction, respectively. Narrow first laser processing groove 14-2.

此外，在第1雷射加工槽形成步驟ST2-2中，雷射加工裝置30的控制單元38，與實施方式1相同，在第1切割道3的第1雷射加工槽14-2之寬度方向兩邊的槽緣上沿著第1切割道3的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑301。再者，在實施方式2中，於第1雷射加工槽形成步驟ST2-2，雷射加工裝置30的控制單元38將雷射光束200的波長設為355nm，將雷射光束200的輸出設為2.5W（瓦特），並使X軸移動單元36以300mm/秒之固定速度沿著X軸方向移動卡盤台31。In addition, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing apparatus 30 is the same as the first embodiment, and the width of the first laser processing groove 14-2 of the first scribe line 3 is On the groove edges on both sides in the direction along the longitudinal direction of the first scribe line 3, machining chips 301 composed of chips generated during ablation machining are formed. Furthermore, in the second embodiment, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing apparatus 30 sets the wavelength of the laser beam 200 to 355 nm, and sets the output of the laser beam 200 to 355 nm. is 2.5 W (watts), and the X-axis moving unit 36 is made to move the chuck table 31 in the X-axis direction at a fixed speed of 300 mm/sec.

實施方式2的工件加工方法之第2雷射加工槽形成步驟ST3-2，與實施方式1相同，是在實施第1雷射加工槽形成步驟ST2-2之後，沿第2切割道4照射雷射光束200以形成第2雷射加工槽15-2的步驟。在實施方式2中，於第2雷射加工槽形成步驟ST3-2，雷射加工裝置30的控制單元38在第2切割道4寬度方向之兩側部施予燒蝕加工，以除去第2切割道4寬度方向之兩側部各別的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖13以緊密的平行斜線所示，沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2雷射加工槽15-2。在實施方式2的工件加工方法之第2雷射加工槽形成步驟ST3-2中，在第2切割道4寬度方向的兩側部各別形成較實施方式1的第2雷射加工槽15寬度窄的第2雷射加工槽15-2。In the second laser processing groove forming step ST3-2 of the workpiece processing method of the second embodiment, as in the first embodiment, after the first laser processing groove forming step ST2-2 is carried out, the laser beam is irradiated along the second scribe line 4. The step of emitting the beam 200 to form the second laser processing groove 15-2. In the second embodiment, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30 performs ablation processing on both sides in the width direction of the second scribe line 4 to remove the second laser processing groove. The protective film 10 for plasma etching, the metal film such as the Low-k film and the TEG film on both sides of the scribe line 4 in the width direction, as shown by the close parallel oblique lines in FIG. 13 , are along the length of the second scribe line 4 A second laser processing groove 15 - 2 recessed from the front surface of the substrate 2 is formed in the direction. In the second laser processing groove forming step ST3 - 2 of the workpiece processing method of the second embodiment, the width of the second laser processing groove 15 in the first embodiment is respectively formed on both sides of the second scribe line 4 in the width direction. Narrow second laser processing groove 15-2.

此外，在第2雷射加工槽形成步驟ST3-2中，雷射加工裝置30的控制單元38，與實施方式1相同，在第2切割道4的第2雷射加工槽15-2之寬度方向兩邊的槽緣上沿著第2切割道4的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑401。此外，在第2雷射加工槽形成步驟ST3-2中，雷射加工裝置30的控制單元38在形成第2雷射加工槽15-2時，將在第1雷射加工槽形成步驟ST2-2形成的加工屑301之中位於切割道14-2、15-2彼此的交叉部9之部分303，如圖13所示在第2切割道4上從第1雷射加工槽14-2寬度方向的端部向中央部延伸。In addition, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30 is the same as the first embodiment, and the width of the second laser processing groove 15-2 of the second scribe line 4 is On the groove edges on both sides in the direction along the longitudinal direction of the second scribe line 4, machining chips 401 composed of chips generated during ablation machining are formed. In addition, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30, when forming the second laser processing groove 15-2, will perform the first laser processing groove forming step ST2- The portion 303 of the formed machining chips 301 located at the intersection 9 of the scribe lines 14-2 and 15-2 is as wide as the width of the first laser processing groove 14-2 on the second scribe line 4 as shown in FIG. 13. The ends of the directions extend toward the center.

另外，加工屑301的部分303係相當於，在第1雷射加工槽形成步驟ST2-2中產生於第1雷射加工槽14-2的槽緣，且通過實施第2雷射加工槽形成步驟ST3-2而在第1切割道3與第2切割道4的交叉部9向第2方向102延伸的加工屑。再者，在實施方式2中，於第2雷射加工槽形成步驟ST3-2，雷射加工裝置30的控制單元38將雷射光束200的波長設為355nm，將雷射光束200的輸出設為2.5W（瓦特），並使X軸移動單元36以300mm/秒之固定速度沿著X軸方向移動卡盤台31。In addition, the portion 303 of the machining chips 301 corresponds to the groove edge generated in the first laser-machined groove 14-2 in the first laser-machined groove forming step ST2-2, and the second laser-machined groove is formed by performing the second laser-machined groove formation. Machining chips extending in the second direction 102 at the intersection 9 of the first scribe line 3 and the second scribe line 4 in step ST3-2. Furthermore, in the second embodiment, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30 sets the wavelength of the laser beam 200 to 355 nm, and sets the output of the laser beam 200 to 355 nm. is 2.5 W (watts), and the X-axis moving unit 36 is made to move the chuck table 31 in the X-axis direction at a fixed speed of 300 mm/sec.

在實施方式2中的工件加工方法之第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第1切割道3相對地移動第1切割道3與雷射光束照射單元34，一邊從雷射光束照射單元34向第1切割道3寬度方向之中央照射對工件1具有吸收性波長（在實施方式2中為355nm）的雷射光束200。在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38在第1切割道3寬度方向之中央施予燒蝕加工，以除去第1切割道3寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖14以粗的平行斜線所示，在第1雷射加工槽14-2之間且沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1寬幅槽16。第1寬幅槽形成步驟ST6中形成的第1寬幅槽16是與第1雷射加工槽14-2連通。In the first wide groove forming step ST6 of the workpiece machining method according to the second embodiment, the control unit 38 of the laser machining apparatus 30 rotates the chuck table about the axis parallel to the vertical direction (Z-axis direction) by the rotation unit 35 31, and make the first scribe line 3 parallel to the machining feed direction, that is, the X-axis direction. In the first wide groove forming step ST6 , the control unit 38 of the laser processing apparatus 30 relatively moves the first scribe line 3 and the laser beam along the first scribe line 3 while causing the X-axis moving unit 36 and the Y-axis moving unit 37 The laser beam irradiating unit 34 irradiates the laser beam 200 having an absorbing wavelength (355 nm in Embodiment 2) to the workpiece 1 from the laser beam irradiating unit 34 toward the center in the width direction of the first scribe line 3 . In the first wide-width groove forming step ST6, the control unit 38 of the laser processing apparatus 30 performs ablation processing on the center of the width direction of the first scribe line 3 to remove the plasma in the center of the width direction of the first scribe line 3 The etching protective film 10 , the Low-k film, and metal films such as TEG, as shown by the thick parallel slanted lines in FIG. A first wide groove 16 recessed from the front surface of the substrate 2 is formed. The first wide groove 16 formed in the first wide groove forming step ST6 communicates with the first laser processing groove 14-2.

此外，在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38在除去形成在第1雷射加工槽14-2寬度方向之槽緣的加工屑301之中靠近第1切割道3的加工屑301的同時，除去靠第1切割道3外側的加工屑301之部分303之中位在第1寬幅槽16內的部分。在實施方式2中，於第1寬幅槽形成步驟ST6，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以600mm/秒之固定速度沿著X軸方向移動卡盤台31。如此，第1寬幅槽形成步驟ST6在實施第2雷射加工槽形成步驟ST3-2之後，沿第1切割道3照射雷射光束200以除去前述加工屑301之部分303的清潔步驟。此外，在第1寬幅槽形成步驟ST6中，加工進給速度即卡盤台31的X軸方向的移動速度，與第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2相比較為快速。In addition, in the first wide-width groove forming step ST6, the control unit 38 of the laser processing apparatus 30 approaches the first cut while removing the processing chips 301 formed on the groove edges in the width direction of the first laser-processing groove 14-2. At the same time as the machining chips 301 of the lane 3 are removed, the portion located in the first wide groove 16 among the portions 303 of the machining chips 301 outside the first cutting lane 3 is removed. In the second embodiment, in the first wide-width groove forming step ST6, the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and makes the X-axis moving unit 36 run at 600 mm/sec. The chuck table 31 is moved along the X-axis direction at a constant speed. In this way, in the first wide groove forming step ST6 , after the second laser processing groove forming step ST3 - 2 is performed, a cleaning step of irradiating the laser beam 200 along the first scribe line 3 to remove the portion 303 of the processing chips 301 . In addition, in the first wide-width groove forming step ST6, the machining feed speed, that is, the moving speed of the chuck table 31 in the X-axis direction, is combined with the first laser-cut groove forming step ST2-2 and the second laser-cut groove forming step ST2-2. Step ST3-2 is relatively fast.

在實施方式2中的工件加工方法之第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第2切割道4與加工進給方向即X軸方向平行。在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第2切割道4相對地移動第2切割道4與雷射光束照射單元34，一邊從雷射光束照射單元34向第2切割道4寬度方向之中央照射對工件1具有吸收性波長（在實施方式2中為355nm）的雷射光束200。在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38在第2切割道4寬度方向之中央施予燒蝕加工，以除去第2切割道4寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖15以粗的平行斜線所示，在第2雷射加工槽15-2之間且沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2寬幅槽17。第2寬幅槽形成步驟ST7中形成的第2寬幅槽17是與第2雷射加工槽15-2連通。In the second wide groove forming step ST7 of the workpiece machining method in Embodiment 2, the control unit 38 of the laser processing apparatus 30 rotates the chuck table about the axis parallel to the vertical direction (Z-axis direction) by the rotation unit 35 31, and make the second scribe line 4 parallel to the machining feed direction, that is, the X-axis direction. In the second wide-width groove forming step ST7 , the control unit 38 of the laser processing apparatus 30 relatively moves the second scribe line 4 and the laser beam along the second scribe line 4 while the X-axis moving unit 36 and the Y-axis moving unit 37 are moved along the second scribe line 4 . The laser beam irradiating unit 34 irradiates the laser beam 200 having an absorbing wavelength (355 nm in Embodiment 2) to the workpiece 1 from the laser beam irradiating unit 34 toward the center in the width direction of the second scribe line 4 . In the second wide-width groove forming step ST7, the control unit 38 of the laser processing apparatus 30 performs ablation processing on the center of the width direction of the second scribe line 4 to remove the plasma in the center of the width direction of the second scribe line 4 The etching protective film 10 , the Low-k film, and metal films such as TEG, as shown by the thick parallel oblique lines in FIG. A second wide groove 17 recessed from the front surface of the substrate 2 is formed. The second wide groove 17 formed in the second wide groove forming step ST7 communicates with the second laser processing groove 15-2.

此外，在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38除去形成在第2雷射加工槽15寬度方向之槽緣的加工屑401之中靠近第2切割道4的加工屑401。在實施方式2中，於第2寬幅槽形成步驟ST7，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以600mm/秒之固定速度沿著X軸方向移動卡盤台31。In addition, in the second wide-width groove forming step ST7, the control unit 38 of the laser processing apparatus 30 removes the processing chips 401 formed on the groove edges in the width direction of the second laser-processing groove 15 near the second scribe line 4. Machining chips 401. In the second embodiment, in the second wide-width groove forming step ST7 , the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and makes the X-axis moving unit 36 operate at 600 mm/sec. The chuck table 31 is moved along the X-axis direction at a constant speed.

實施方式2的工件加工方法，是在實施第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2之後，藉由實施清潔步驟即第1寬幅槽形成步驟ST6，除去加工屑301的部分303。因此，實施方式2的工件加工方法，在第1寬幅槽形成步驟ST6的後續步驟之電漿蝕刻步驟ST5中，能夠抑制加工屑301的部分303對電漿蝕刻的阻礙。其結果，工件加工方法與實施方式1相同，能夠降低在第1寬幅槽形成步驟ST6的後續步驟中產生問題的風險。In the workpiece machining method according to the second embodiment, after the first laser-machined groove forming step ST2-2 and the second laser-machined groove forming step ST3-2 are carried out, the cleaning step, that is, the first wide groove forming step ST6 is carried out. , the portion 303 of the machining chips 301 is removed. Therefore, in the workpiece machining method of the second embodiment, in the plasma etching step ST5, which is a subsequent step to the first wide-width groove forming step ST6, the portion 303 of the machining chips 301 can suppress the inhibition of the plasma etching. As a result, the workpiece processing method is the same as that of the first embodiment, and it is possible to reduce the risk of causing problems in the steps subsequent to the first wide-width groove forming step ST6.

此外，實施方式2的工件加工方法在雷射加工槽形成步驟ST2-2、ST3-2中，因為在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2，所以能夠抑制Low-k膜從基板2剝離。In addition, in the workpiece machining method according to the second embodiment, in the laser processing groove forming steps ST2-2 and ST3-2, lasers with a width narrower than that of the first embodiment are formed on both sides of the scribe lines 3 and 4 in the width direction, respectively. Since the grooves 14-2 and 15-2 are processed, peeling of the Low-k film from the substrate 2 can be suppressed.

（變形例） 以下說明實施方式1及實施方式2的變形例之工件1的加工方法。實施方式1及實施方式2的工件加工方法在保護膜覆蓋步驟ST1中，雖以水溶性的保護膜溶液11塗佈，但在本發明中，也可以用硬化後具有電漿耐受性的液體即光阻劑（Resist）塗佈在工件1之整個正面7，進行曝光、顯影，以除去切割道5上的光阻劑。另外，在塗佈光阻劑時，例如將工件1保持在繞軸心旋轉的旋轉台之後，一邊使旋轉台繞軸心旋一邊供給光阻劑至正面7。此外，變形例之工件1的加工方法在雷射加工槽形成步驟ST2、ST2-2、ST3及ST3-2中，與實施方式1及實施方式2相同，施予燒蝕以除去Low-k膜，形成雷射加工槽14、14-2，15及15-2。此外，變形例之工件1的加工方法，在除去光阻劑時，進行習知的灰化（Ashing）。(Modification) The processing method of the workpiece|work 1 which concerns on the modification of Embodiment 1 and Embodiment 2 is demonstrated below. In the protective film covering step ST1 in the workpiece processing methods of the first and second embodiments, the water-soluble protective film solution 11 is applied, but in the present invention, a liquid having plasma resistance after curing may be used. That is, the photoresist (Resist) is coated on the entire front surface 7 of the workpiece 1 , and is exposed and developed to remove the photoresist on the scribe line 5 . In addition, when applying the photoresist, for example, after the workpiece 1 is held on a turntable that rotates around the axis, the photoresist is supplied to the front surface 7 while the turntable is rotated around the axis. In addition, in the processing method of the workpiece 1 of the modified example, in the laser processing groove forming steps ST2, ST2-2, ST3 and ST3-2, as in the first and second embodiments, ablation is applied to remove the Low-k film , forming laser processing grooves 14, 14-2, 15 and 15-2. In addition, in the processing method of the workpiece|work 1 of a modification, when removing a photoresist, a conventional ashing (Ashing) is performed.

（實施方式3） 根據圖式說明本發明實施方式3的工件加工方法。圖16係表示實施方式3之工件加工方法的流程之流程圖。圖17係表示圖16所示工件加工方法之第1雷射加工槽形成步驟及第2雷射加工槽形成步驟的側剖面圖。圖18係表示圖16所示工件加工方法之切割步驟的側剖面圖。另外，圖16到圖18中，與實施方式1及實施方式2相同部分標記相同符號並省略說明。(Embodiment 3) A workpiece machining method according to Embodiment 3 of the present invention will be described with reference to the drawings. 16 is a flowchart showing the flow of the workpiece machining method according to the third embodiment. FIG. 17 is a side cross-sectional view showing a first laser-cut groove forming step and a second laser-cut groove forming step in the workpiece processing method shown in FIG. 16 . FIG. 18 is a side sectional view showing a cutting step of the method for machining the workpiece shown in FIG. 16 . In addition, in FIGS. 16 to 18 , the same parts as those in Embodiment 1 and Embodiment 2 are denoted by the same reference numerals, and descriptions thereof are omitted.

實施方式3的工件加工方法是如圖16所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2-2，第2雷射加工槽形成步驟ST3-2，清潔步驟ST4-3，以及切割步驟ST8。As shown in FIG. 16 , the workpiece machining method according to the third embodiment includes: a protective film covering step ST1, a first laser processing groove forming step ST2-2, a second laser processing groove forming step ST3-2, and a cleaning step ST4- 3, and cutting step ST8.

實施方式3的工件加工方法之雷射加工槽形成步驟ST2-2、ST3-2是如圖17所示，一邊使切割道5與雷射光束照射單元34沿著切割道5相對地移動，一邊從雷射光束照射單元34對工件1照射雷射光束200。實施方式3的工件加工方法之雷射加工槽形成步驟ST2-2、ST3-2是與實施方式2相同，在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2。The laser processing groove forming steps ST2-2 and ST3-2 of the workpiece processing method according to the third embodiment are performed by moving the scribe lane 5 and the laser beam irradiation unit 34 relatively along the scribe lane 5 as shown in FIG. 17 . The workpiece 1 is irradiated with the laser beam 200 from the laser beam irradiating unit 34 . The laser processing groove forming steps ST2-2 and ST3-2 of the workpiece machining method according to the third embodiment are the same as those of the second embodiment, and the widths of the scribe lines 3 and 4 are respectively formed on both sides in the width direction narrower than those of the first embodiment. Laser processing grooves 14-2 and 15-2.

實施方式3的工件加工方法之清潔步驟ST4-3，是在實施第2雷射加工槽形成步驟ST3-2之後，沿第1切割道3照射雷射光束200以除去加工屑301之部分303的步驟。在實施方式3中，於清潔步驟ST4-3，雖然在遍及第1雷射加工槽14-2全長的第1雷射加工槽14-2內照射雷射光束200，但在本發明中，也可以僅在第1雷射加工槽14-2內之交叉部9附近照射。當雷射光束200照射到工件1的所有第1切割道3之第1雷射加工槽14-2時，實施方式3的工件加工方法進入切割步驟ST8。In the cleaning step ST4-3 of the workpiece machining method according to the third embodiment, the portion 303 of the machining chips 301 is removed by irradiating the laser beam 200 along the first scribe line 3 after the second laser machining groove forming step ST3-2 is performed. step. In the third embodiment, in the cleaning step ST4-3, the laser beam 200 is irradiated in the first laser processing groove 14-2 over the entire length of the first laser processing groove 14-2, but in the present invention, the It is possible to irradiate only in the vicinity of the intersection 9 in the first laser processing groove 14-2. When the laser beam 200 is irradiated on the first laser processing grooves 14 - 2 of all the first scribe lines 3 of the workpiece 1 , the workpiece processing method of the third embodiment proceeds to the cutting step ST8 .

切割步驟ST8是使用切割裝置60將工件1分割為個個元件6的步驟。在切割步驟ST8中，切割裝置60將透過黏著膠帶13將工件1之背面8側吸引保持在卡盤台61的保持面62上，並且以夾具63夾持環狀框架12。在切割步驟ST8中，如圖18所示，切割裝置60一邊使切割刀片64及工件1沿著切割道5相對地移動，一邊使切割刀片64切入切割道5直到切入黏著膠帶13為止，以將工件1分割為個個元件6。工件加工方法在將工件1分割為個個元件6時結束。另外之後，工件1在例如清洗水被供給至正面7之後，個個元件6被從黏著膠帶13上拾取。The cutting step ST8 is a step of dividing the workpiece 1 into the individual components 6 using the cutting device 60 . In the dicing step ST8 , the dicing device 60 sucks and holds the back surface 8 of the workpiece 1 on the holding surface 62 of the chuck table 61 through the adhesive tape 13 , and clamps the ring frame 12 with the jig 63 . In the cutting step ST8 , as shown in FIG. 18 , the cutting device 60 moves the cutting blade 64 and the workpiece 1 relatively along the cutting lane 5 , and cuts the cutting blade 64 into the cutting lane 5 until the adhesive tape 13 is cut, so as to cut the cutting blade 64 into the cutting lane 5 . The workpiece 1 is divided into individual elements 6 . The workpiece machining method ends when the workpiece 1 is divided into individual components 6 . In addition, after the workpiece 1 is supplied, for example, with washing water to the front surface 7 , the individual components 6 are picked up from the adhesive tape 13 .

實施方式3的工件加工方法，是在實施第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2之後，藉由實施清潔步驟ST4-3，除去加工屑301的部分303。因此，實施方式3的工件加工方法，在清潔步驟ST4-3的後續步驟之切割步驟ST8中，能夠抑制因加工屑301的部分303造成切割刀片64蛇行、崩裂的產生、裂痕的產生以及切割刀片64損壞。其結果，實施方式3的工件加工方法與實施方式1相同，能夠降低在清潔步驟ST4-3的後續步驟中產生問題的風險。The workpiece machining method according to the third embodiment is a method of removing the machining chips 301 by executing the cleaning step ST4-3 after the first laser machining groove forming step ST2-2 and the second laser machining groove forming step ST3-2 are executed. Section 303. Therefore, in the workpiece machining method of the third embodiment, in the cutting step ST8, which is the subsequent step of the cleaning step ST4-3, the cutting blade 64 can be prevented from meandering, chipping, cracking, and the cutting blade caused by the portion 303 of the machining chips 301. 64 damaged. As a result, the workpiece processing method of the third embodiment is the same as that of the first embodiment, and it is possible to reduce the risk of causing problems in the subsequent steps of the cleaning step ST4-3.

此外，實施方式3的工件加工方法在雷射加工槽形成步驟ST2-2、ST3-2中，因為在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2，所以能夠抑制Low-k膜從基板2剝離。In addition, in the workpiece machining method according to the third embodiment, in the laser processing groove forming steps ST2-2 and ST3-2, lasers with a width narrower than that of the first embodiment are formed on both sides in the width direction of the scribe lines 3 and 4, respectively. Since the grooves 14-2 and 15-2 are processed, peeling of the Low-k film from the substrate 2 can be suppressed.

另外，本發明非限定於上述實施方式及變形例。亦即，在未超出本發明精神的範圍內可以實施各種變形。在前述實施方式等之中，工件加工方法於保護膜覆蓋步驟ST1中，塗佈水溶性的保護膜溶液11以形成電漿蝕刻用保護膜10。然而，在本發明中，工件加工方法在由感光性聚醯亞胺（Polyimide）等所構成的鈍化（Passivation）膜層積於工件1的正面7上的情況下，也可以將鈍化膜用作電漿蝕刻用保護膜。鈍化膜是被層積在基板2的正面，從外部環境中保護元件6的電路，並物理性及化學性地保護元件6的東西，是具有電漿蝕刻耐受性的膜。在本發明中，鈍化膜可以層積在包含切割道5的工件1的整個正面7上，也可以只層積在元件6的表面上而在切割道5中露出基板2。In addition, this invention is not limited to the said embodiment and modification. That is, various modifications can be implemented without departing from the spirit of the present invention. In the aforementioned embodiments and the like, in the work processing method, in the protective film covering step ST1 , the water-soluble protective film solution 11 is applied to form the protective film 10 for plasma etching. However, in the present invention, in the workpiece processing method, when a passivation film composed of photosensitive polyimide or the like is laminated on the front surface 7 of the workpiece 1 , the passivation film may be used as the passivation film. Protective film for plasma etching. The passivation film is laminated on the front surface of the substrate 2, protects the circuit of the element 6 from the external environment, and protects the element 6 physically and chemically, and is a film having plasma etching resistance. In the present invention, the passivation film may be laminated on the entire front surface 7 of the workpiece 1 including the dicing lanes 5 , or may be laminated only on the surface of the element 6 to expose the substrate 2 in the dicing lanes 5 .

1‧‧‧工件3‧‧‧第1切割道4‧‧‧第2切割道5‧‧‧切割道9‧‧‧交叉部10‧‧‧電漿蝕刻用保護膜14、14-2‧‧‧第1雷射加工槽15、15-2‧‧‧第2雷射加工槽101‧‧‧第1方向102‧‧‧第2方向200‧‧‧雷射光束303‧‧‧部分（延伸在第2方向的加工屑）ST1‧‧‧保護膜覆蓋步驟ST2、ST2-2‧‧‧第1雷射加工槽形成步驟ST3、ST3-2‧‧‧第2雷射加工槽形成步驟ST4、ST4-3‧‧‧清潔步驟ST5‧‧‧電漿蝕刻步驟ST6‧‧‧第1寬幅槽形成步驟（清潔步驟）1‧‧‧Workpiece 3‧‧‧First dicing lane 4‧‧‧Second dicing lane 5‧‧‧Cutting lane 9‧‧‧Intersection 10‧‧‧Protective film for plasma etching 14, 14-2‧‧ ‧First laser processing groove 15, 15-2‧‧‧Second laser processing groove 101‧‧‧First direction 102‧‧‧Second direction 200‧‧‧Part of laser beam 303‧‧‧ (extends in Machining chips in the second direction) ST1‧‧‧Protective film covering step ST2, ST2-2‧‧‧First laser processing groove forming step ST3, ST3-2‧‧‧Second laser processing groove forming step ST4, ST4 -3‧‧‧Cleaning Step ST5‧‧‧Plasma Etching Step ST6‧‧‧First Wide Groove Forming Step (Cleaning Step)

圖1係表示實施方式1之工件加工方法的加工對象之工件之一例的立體圖。 圖2係表示實施方式1之工件加工方法的流程之流程圖。 圖3係表示圖2所示工件加工方法之保護膜覆蓋步驟的側剖面圖。 圖4係圖2所示工件加工方法之保護膜覆蓋步驟後的工件之剖面圖。 圖5係表示在圖2所示工件加工方法之第1雷射加工槽形成步驟等所用的雷射加工裝置之立體圖。 圖6係表示圖2所示工件加工方法之第1雷射加工槽形成步驟的側剖面圖。 圖7係表示圖2所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖8係表示圖2所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖9係表示圖2所示工件加工方法之清潔步驟後的工件之正面的一部分之俯視圖。 圖10係表示在圖2所示工件加工方法之電漿蝕刻步驟所用的蝕刻裝置的構成之剖面圖。 圖11係表示實施方式2之工件加工方法的流程之流程圖。 圖12係表示圖11所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖13係表示圖11所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖14係表示圖11所示工件加工方法之第1寬幅槽形成步驟後的工件之正面的一部分之俯視圖。 圖15係表示圖11所示工件加工方法之第2寬幅槽形成步驟後的工件之正面的一部分之俯視圖。 圖16係表示實施方式3之工件加工方法的流程之流程圖。 圖17係表示圖16所示工件加工方法之第1雷射加工槽形成步驟及第2雷射加工槽形成步驟的側剖面圖。 圖18係表示圖16所示工件加工方法之切割步驟的側剖面圖。FIG. 1 is a perspective view showing an example of a workpiece to be machined by the workpiece machining method according to Embodiment 1. FIG. FIG. 2 is a flowchart showing the flow of the workpiece machining method according to the first embodiment. FIG. 3 is a side sectional view showing a protective film covering step of the workpiece processing method shown in FIG. 2 . FIG. 4 is a cross-sectional view of the workpiece after the protective film covering step of the workpiece processing method shown in FIG. 2 . FIG. 5 is a perspective view showing a laser processing apparatus used in a first laser processing groove forming step and the like of the workpiece processing method shown in FIG. 2 . FIG. 6 is a side sectional view showing a first step of forming a laser processing groove in the method for machining the workpiece shown in FIG. 2 . 7 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece machining method shown in FIG. 2 . 8 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece machining method shown in FIG. 2 . FIG. 9 is a plan view showing a part of the front surface of the workpiece after the cleaning step of the workpiece processing method shown in FIG. 2 . FIG. 10 is a cross-sectional view showing the configuration of an etching apparatus used in the plasma etching step of the workpiece processing method shown in FIG. 2 . 11 is a flowchart showing the flow of the workpiece machining method according to the second embodiment. FIG. 12 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece machining method shown in FIG. 11 . 13 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece machining method shown in FIG. 11 . FIG. 14 is a plan view showing a part of the front surface of the workpiece after the first wide-width groove forming step of the workpiece machining method shown in FIG. 11 . FIG. 15 is a plan view showing a part of the front surface of the workpiece after the second wide-width groove forming step of the workpiece machining method shown in FIG. 11 . 16 is a flowchart showing the flow of the workpiece machining method according to the third embodiment. FIG. 17 is a side cross-sectional view showing a first laser-cut groove forming step and a second laser-cut groove forming step in the workpiece processing method shown in FIG. 16 . FIG. 18 is a side sectional view showing a cutting step of the method for machining the workpiece shown in FIG. 16 .

ST1‧‧‧保護膜覆蓋步驟 ST1‧‧‧Protective film covering steps

ST2‧‧‧第1雷射加工槽形成步驟 ST2‧‧‧First laser processing groove forming step

ST3‧‧‧第2雷射加工槽形成步驟 ST3‧‧‧Second laser processing groove forming step

ST4‧‧‧清潔步驟 ST4‧‧‧Cleaning steps

ST5‧‧‧電漿蝕刻步驟 ST5‧‧‧Plasma Etching Step

Claims (4)

一種工件加工方法，該工件具有多條切割道，所述多條切割道由在第1方向延伸的第1切割道，及在與該第1方向交叉的第2方向上延伸的第2切割道所組成，該工件加工方法之特徵在於，具備：第1雷射加工槽形成步驟，沿該第1切割道照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽；第2雷射加工槽形成步驟，在實施該第1雷射加工槽形成步驟後，沿該第2切割道照射該雷射光束以形成第2雷射加工槽；以及清潔步驟，在實施該第2雷射加工槽形成步驟後，不沿著該第2切割道照射而是僅沿該第1切割道照射該雷射光束，以除去加工屑，該加工屑在該第1雷射加工槽形成步驟中產生於該第1雷射加工槽的槽緣，且因實施該第2雷射加工槽形成步驟而在該第1切割道與該第2切割道之交叉部延伸於該第2方向上；在該第1雷射加工槽形成步驟、該第2雷射加工槽形成步驟及該清潔步驟中照射相同波長的雷射光束。 A method for processing a workpiece, the workpiece has a plurality of cutting tracks, the plurality of cutting tracks are composed of a first cutting track extending in a first direction, and a second cutting track extending in a second direction intersecting with the first direction The workpiece processing method is characterized by comprising: a first laser processing groove forming step of irradiating a laser beam having an absorbing wavelength to the workpiece along the first scribe line to form a first laser processing groove; a second laser processing groove; a laser processing groove forming step, after the first laser processing groove forming step is carried out, the laser beam is irradiated along the second scribe line to form a second laser processing groove; and a cleaning step is carried out after the second laser processing groove is carried out After the laser processing groove forming step, the laser beam is not irradiated along the second scribe line but only along the first dicing road to remove the processing chips, which were in the first laser processing groove forming step generated from the groove edge of the first laser-processed groove, and extending in the second direction at the intersection of the first scribe line and the second scribe line due to the second laser-processed groove forming step; in The laser beams of the same wavelength are irradiated in the first laser processing groove forming step, the second laser processing groove forming step, and the cleaning step. 如申請專利範圍第1項所述之工件加工方法，其中，具備保護膜覆蓋步驟，在實施該第1雷射加工槽形成步驟之前，將電漿蝕刻用保護膜覆蓋至工件上；藉由實施該第1雷射加工槽形成步驟、該第2雷射加工槽形成步驟以及該清潔步驟，使該第1切割道及該第2切割道露出；以及具備電漿蝕刻步驟，在實施該清潔步驟之後，透過該電漿蝕刻用保護膜在工件上施予電漿蝕刻。 The workpiece processing method according to claim 1, further comprising a step of covering a protective film, and prior to performing the first step of forming a laser processing groove, covering the workpiece with a protective film for plasma etching; The first laser processing groove forming step, the second laser processing groove forming step, and the cleaning step expose the first scribe line and the second scribe line; and a plasma etching step is provided, and the cleaning step is performed Then, plasma etching is performed on the workpiece through the protective film for plasma etching. 如申請專利範圍第1項所述之工件加工方法，其中，在該清潔步驟中，與該第1雷射加工槽形成步驟及該第2雷射加工槽形成步驟相比，加工進給速度較快。 The workpiece machining method according to claim 1, wherein, in the cleaning step, the machining feed rate is higher than that in the first laser machining groove forming step and the second laser machining groove forming step. quick. 一種工件加工方法，該工件具有多條切割道，所述多條切割道由在第1方向延伸的第1切割道，及在與該第1方向交叉的第2方向上延伸的第2切割道所組成，該工件加工方法之特徵在於，具備： 第1雷射加工槽形成步驟，以不照射該第1切割道的寬度方向的中央部之方式，沿該第1切割道的寬度方向的兩側部各別照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽；第2雷射加工槽形成步驟，在實施該第1雷射加工槽形成步驟後，以不照射該第2切割道的寬度方向的中央部之方式，沿該第2切割道的寬度方向的兩側部各別照射該雷射光束以形成第2雷射加工槽；以及清潔步驟，在實施該第2雷射加工槽形成步驟後，沿該第1切割道及該第2切割道照射該雷射光束，以除去加工屑，該加工屑在該第1雷射加工槽形成步驟中產生於該第1雷射加工槽的槽緣，且因實施該第2雷射加工槽形成步驟而在該第1切割道與該第2切割道之交叉部延伸於該第2方向上。 A method for processing a workpiece, the workpiece has a plurality of cutting tracks, the plurality of cutting tracks are composed of a first cutting track extending in a first direction, and a second cutting track extending in a second direction intersecting with the first direction The workpiece processing method is characterized in that it has: In the first laser processing groove forming step, laser beams having wavelengths absorbing to the workpiece are respectively irradiated along both sides of the first scribe line in the width direction so as not to irradiate the center portion in the width direction of the first scribe line. A beam is radiated to form a first laser-processed groove; in the second laser-processed groove forming step, after the first laser-processed groove forming step is performed, the central portion in the width direction of the second scribe line is not irradiated, The two sides along the width direction of the second scribe line are respectively irradiated with the laser beam to form second laser processing grooves; and in the cleaning step, after the second laser processing groove forming step is performed, the first laser processing grooves are formed along the first The scribe line and the second scribe line are irradiated with the laser beam to remove machining debris, which is generated on the groove edge of the first laser machined groove in the first laser machined groove forming step, and due to the implementation of the The second laser processing groove forming step extends in the second direction at the intersection of the first scribe line and the second scribe line.
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