TW201919122A - Workpiece processing method to clean processing chips - Google Patents

Workpiece processing method to clean processing chips Download PDF

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Publication number
TW201919122A
TW201919122A TW107137932A TW107137932A TW201919122A TW 201919122 A TW201919122 A TW 201919122A TW 107137932 A TW107137932 A TW 107137932A TW 107137932 A TW107137932 A TW 107137932A TW 201919122 A TW201919122 A TW 201919122A
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workpiece
laser processing
forming step
groove forming
laser
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TW107137932A
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TWI775973B (en
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熊澤哲
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02076—Cleaning after the substrates have been singulated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

The present invention provides a workpiece processing method capable of reducing risks of causing problems in subsequent steps. A workpiece processing method comprising: a first laser processing groove forming step ST2 including irradiating a workpiece with a laser beam having an absorptive wavelength along a first cutting line to form a first laser processing groove; a second laser processing groove forming step ST3 including emitting the laser beam along a second cutting line to form a second laser processing groove; and a cleaning step ST4, including emitting the laser beam along the first cutting line to remove processing chips formed at an edge of the first laser processing groove in the first laser processing groove forming step ST2 and along a second direction extended from an intersection of the first cutting line and the second cutting line in the second laser processing groove forming step ST3.

Description

工件加工方法Workpiece processing method

本發明是關於一種工件加工方法，該工件具有多條切割道，所述多條切割道由在第1方向延伸的第1切割道，及在與第1方向交叉的第2方向上延伸的第2切割道所組成。The present invention relates to a workpiece processing method, the workpiece having a plurality of dicing streets, the plurality of dicing streets extending from a first scribe line extending in a first direction and a second direction extending in a second direction intersecting the first direction 2 cut roads are composed.

在延伸於工件的第1方向上的第1切割道照射雷射光束以形成第1雷射加工槽，且在延伸於與第1方向交叉的第2方向上的第2切割道照射雷射光束以形成第2雷射加工槽之雷射加工裝置（例如參閱專利文獻1）已被使用。 [習知技術文獻] [專利文獻]The first scribe line extending in the first direction of the workpiece illuminates the laser beam to form the first laser processing groove, and the second scribe line extending in the second direction intersecting the first direction illuminates the laser beam A laser processing apparatus for forming a second laser processing tank (see, for example, Patent Document 1) has been used. [Practical Technical Literature] [Patent Literature]

[專利文獻1]日本特開2003-320466號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-320466

[發明所欲解決的課題] 然而，使用專利文獻1所示雷射加工裝置的工件加工方法，當沿著第1切割道照射雷射光束以形成第1雷射加工槽時，雷射加工所生成的加工屑會堆積在所形成的第1雷射加工槽的邊緣。而且，工件加工方法在沿著第2切割道照射雷射光束以形成第2雷射加工槽時，於第1切割道與第2切割道的交叉部，堆積在第1雷射加工槽的邊緣的加工屑會沿著第2切割道延伸，而造成加工屑堆積在交叉部。堆積在交叉部的加工屑，會在例如切割加工或電漿蝕刻（Plasma etching）等的雷射加工的後續步驟中產生問題。[Problems to be Solved by the Invention] However, in the workpiece processing method of the laser processing apparatus disclosed in Patent Document 1, when a laser beam is irradiated along the first scribe line to form a first laser processing groove, the laser processing center The generated machining chips are deposited on the edge of the formed first laser machining groove. Further, when the workpiece processing method irradiates the laser beam along the second scribe line to form the second laser processing groove, the workpiece is deposited on the edge of the first laser processing groove at the intersection of the first scribe line and the second scribe line. The machining chips will extend along the second cutting path, causing machining debris to accumulate at the intersection. The machining debris deposited at the intersection may cause problems in subsequent steps of laser processing such as cutting processing or plasma etching.

亦即，例如專利文獻1所揭示般，藉由雷射光束的照射形成雷射加工槽以斷開積層膜之後，以切割刀片分割工件的情況下，由於加工屑使得切割刀片蛇行，會產生突發的崩裂或裂痕，也有切割刀片損壞的風險。此外，在雷射加工後施予電漿蝕刻的情況下，由於加工屑阻礙了電漿蝕刻，會有產生局部地無法加工之區域的風險。That is, for example, as disclosed in Patent Document 1, after the laser processing groove is formed by the irradiation of the laser beam to break the laminated film, and the workpiece is divided by the cutting blade, the cutting blade is snaked due to the machining debris, which causes a sudden break. Cracking or cracking of the hair, there is also a risk of damage to the cutting blade. Further, in the case where plasma etching is applied after the laser processing, since the machining debris hinders the plasma etching, there is a risk that a region which is partially unprocessable may occur.

本發明係有鑑於此種問題點而提出，其目的在於提供一種能夠降低在後續步驟產生問題的風險之工件加工方法。The present invention has been made in view of such a problem, and an object thereof is to provide a workpiece processing method capable of reducing the risk of causing a problem in a subsequent step.

[解決課題的技術手段] 為解決上述課題並達成目的，本發明之工件加工方法，係一種具有多條切割道之工件的加工方法，該多條切割道是由在第1方向延伸的第1切割道，及在與該第1方向交叉的第2方向上延伸的第2切割道所組成的；其特徵在於，具備：第1雷射加工槽形成步驟，沿著該第1切割道照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽；第2雷射加工槽形成步驟，在實施該第1雷射加工槽形成步驟之後，沿著該第2切割道照射該雷射光束以形成第2雷射加工槽；以及清潔步驟，在實施該第2雷射加工槽形成步驟之後，沿著該第1切割道照射該雷射光束，以除去在該第1雷射加工槽形成步驟中產生於該第1雷射加工槽的槽緣且因實施該第2雷射加工槽形成步驟而在該第1切割道與該第2切割道的交叉部延伸於該第2方向上的加工屑。[Means for Solving the Problem] In order to solve the above problems and achieve the object, the workpiece processing method of the present invention is a method for processing a workpiece having a plurality of dicing streets, the plurality of dicing streets being the first one extending in the first direction a dicing road and a second scribe line extending in a second direction intersecting the first direction; and comprising: a first laser processing groove forming step, and illuminating the first dicing channel along the first scribe line a workpiece having a laser beam having an absorptive wavelength to form a first laser processing groove; and a second laser processing groove forming step of irradiating the thunder along the second cutting channel after performing the first laser processing groove forming step And irradiating the light beam to form the second laser processing groove; and cleaning step, after performing the second laser processing groove forming step, irradiating the laser beam along the first cutting channel to remove the first laser processing The groove forming step is formed in the groove edge of the first laser processing groove, and the second laser processing groove forming step is performed to extend in the second direction at the intersection of the first scribe line and the second scribe line Processing chips on it.

在前述工件加工方法中，在實施該第1雷射加工槽形成步驟前，具備將電漿蝕刻用保護膜覆蓋至工件的保護膜覆蓋步驟，藉由實施該第1雷射加工槽形成步驟、該第2雷射加工槽形成步驟及該清潔步驟使該第1切割道及該第2切割道露出，在實施該清潔步驟之後，也可以具備透過該電漿蝕刻用保護膜在工件上施予電漿蝕刻的電漿蝕刻步驟。In the above-described workpiece processing method, before the step of forming the first laser processing groove, a protective film covering step of covering the workpiece with the plasma etching protective film is provided, and the first laser processing groove forming step is performed The second laser processing groove forming step and the cleaning step expose the first dicing street and the second dicing street, and after performing the cleaning step, the film may be applied to the workpiece through the plasma etching protective film. Plasma etching step of plasma etching.

在前述工件加工方法中，於該清潔步驟中，與該第1雷射加工槽形成步驟及該第2雷射加工槽形成步驟相比，加工進給速度也可以較快。In the above-described workpiece processing method, in the cleaning step, the processing feed speed can be faster than the first laser processing groove forming step and the second laser processing groove forming step.

[發明功效] 本發明係發揮在後續步驟中能夠降低產生問題的風險之功效。[Effect of the Invention] The present invention exerts an effect of being able to reduce the risk of causing a problem in a subsequent step.

參閱圖式並詳細說明為了實施本發明的實施例（實施方式）。本發明不為以下實施方式所記載之內容所限定。此外，對於以下所記載的構成要素，包含本領域的技術人員能輕易思及或實質相同者。再來，以下所記載的構成可以作適當的組合。又，在不超出本發明技術思想的範圍，可進行構成的各種省略、置換或變更。The embodiments (embodiments) for carrying out the invention are described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. Further, constituent elements described below can be easily considered or substantially identical to those skilled in the art. Further, the configurations described below can be combined as appropriate. Further, various omissions, substitutions, and changes may be made without departing from the scope of the invention.

（實施方式1）。 根據圖式說明本發明實施方式1的工件加工方法。圖1係表示實施方式1之工件加工方法的加工對象之工件之一例的立體圖。圖2係表示實施方式1之工件加工方法的流程之流程圖。(Embodiment 1). A workpiece processing method according to Embodiment 1 of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view showing an example of a workpiece to be processed in the workpiece machining method according to the first embodiment. Fig. 2 is a flow chart showing the flow of the workpiece processing method of the first embodiment.

實施方式1之工件加工方法係圖1所示工件1的加工方法。在實施方式1中，工件1係以矽、藍寶石或砷化鎵等作為基板2的圓板狀半導體晶圓或光學元件晶圓。工件1是如圖1所示，具有由延伸在直線狀第1方向101的第1切割道3，以及延伸在與第1方向101交叉（在實施方式1中為正交）之直線狀第2方向102的第2切割道4所組成的多條切割道5，且具有在以多條切割道5所劃分的各區域中分別形成有元件6的正面7。The workpiece processing method of the first embodiment is a processing method of the workpiece 1 shown in Fig. 1. In the first embodiment, the workpiece 1 is a disk-shaped semiconductor wafer or an optical element wafer in which ruthenium, sapphire, gallium arsenide or the like is used as the substrate 2. As shown in FIG. 1, the workpiece 1 has a first scribe line 3 extending in the linear first direction 101 and a linear second extending in the first direction 101 (orthogonal in the first embodiment). The plurality of cutting lanes 5 composed of the second cutting lanes 4 of the direction 102 have a front surface 7 in which the elements 6 are respectively formed in respective regions divided by the plurality of cutting lanes 5.

構成元件6的電路是由未圖示的低介電係數絕緣膜（以下稱作Low-k膜）所支撐。Low-k膜構成元件6，用作為層間絕緣膜，並且是對電漿蝕刻具有耐受性的膜。另外，在實施方式1中，工件1在切割道5的表面上也層積有Low-k膜，但本發明中，工件1也可以在切割道5的表面上不層積Low-k膜，而在切割道5露出基板2的正面。The circuit constituting the element 6 is supported by a low dielectric constant insulating film (hereinafter referred to as a Low-k film) (not shown). The Low-k film constituting element 6 serves as an interlayer insulating film and is a film resistant to plasma etching. Further, in the first embodiment, the workpiece 1 is also laminated with a Low-k film on the surface of the dicing street 5, but in the present invention, the workpiece 1 may not laminate the Low-k film on the surface of the dicing street 5, On the scribe line 5, the front side of the substrate 2 is exposed.

此外，在實施方式1中，工件1在切割道5上部分地形成有未圖示的TEG（Test Elements Group，測試元件群）等的金屬膜。TEG是用於找出在元件6中產生的設計上或製造上的問題之評估用元件，在表面上具有作為電極墊的金屬膜。TEG根據工件1的種類等被任意配置。在實施方式1中，工件1在切割道5上形成有TEG等的金屬膜，但本發明也可以不在切割道5上形成TEG等金屬膜。。此外，在實施方式1中，工件1雖為半導體晶圓或光學元件晶圓等的晶圓，但在本發明中不限定為晶圓。Further, in the first embodiment, the workpiece 1 is partially formed with a metal film such as a TEG (Test Elements Group) (not shown) on the scribe line 5. The TEG is an evaluation element for finding a design or manufacturing problem generated in the element 6, and has a metal film as an electrode pad on the surface. The TEG is arbitrarily arranged in accordance with the type of the workpiece 1 and the like. In the first embodiment, the workpiece 1 is formed with a metal film of TEG or the like on the dicing street 5. However, in the present invention, a metal film such as TEG may not be formed on the scribe line 5. . Further, in the first embodiment, the workpiece 1 is a wafer such as a semiconductor wafer or an optical element wafer, but is not limited to a wafer in the present invention.

實施方式1之工件加工方法係圖1所示工件1的加工方法，在實施方式1中是將工件1分割為個個元件6的方法。工件加工方法是如圖2所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2，第2雷射加工槽形成步驟ST3，清潔步驟ST4，以及電漿蝕刻步驟ST5。The workpiece processing method according to the first embodiment is a method of processing the workpiece 1 shown in Fig. 1. In the first embodiment, the workpiece 1 is divided into individual elements 6. As shown in FIG. 2, the workpiece processing method includes a protective film covering step ST1, a first laser processing groove forming step ST2, a second laser processing groove forming step ST3, a cleaning step ST4, and a plasma etching step ST5.

（保護膜覆蓋步驟） 圖3係表示圖2所示工件加工方法之保護膜覆蓋步驟的側剖面圖。圖4係圖2所示工件加工方法之保護膜覆蓋步驟後的工件之剖面圖。(Protective Film Covering Step) Fig. 3 is a side sectional view showing a protective film covering step of the workpiece processing method shown in Fig. 2. Fig. 4 is a cross-sectional view showing the workpiece after the protective film covering step of the workpiece processing method shown in Fig. 2.

保護膜覆蓋步驟ST1是在實施第1雷射加工槽形成步驟ST2之前，將對電漿蝕刻具有耐受性的電漿蝕刻用保護膜10覆蓋至工件1的正面7之步驟。在實施方式1中，於保護膜覆蓋步驟ST1，將外周緣被黏貼在環狀框架12上的黏著膠帶13黏貼在工件1的背面8上。如圖3所示，在實施方式1中，於保護膜覆蓋步驟ST1，使保護膜覆蓋裝置20的殼體21內之離心旋轉台22吸附保持工件1的正面7之背側的背面8，一邊使離心旋轉台22繞軸心旋轉，一邊在工件1的正面7上從噴嘴23塗佈水溶性的保護膜溶液11。水溶性的保護膜溶液11包含聚乙烯醇（polyvinyl alcohol：PVA）或聚乙烯吡咯烷酮（polyvinyl pyrrolidone：PVP）等對電漿蝕刻具有耐受性且水溶性的液狀樹脂等。The protective film covering step ST1 is a step of covering the front surface 7 of the workpiece 1 with the plasma etching protective film 10 which is resistant to plasma etching before the first laser processing groove forming step ST2 is performed. In the first embodiment, in the protective film covering step ST1, the adhesive tape 13 whose outer peripheral edge is adhered to the annular frame 12 is adhered to the back surface 8 of the workpiece 1. As shown in FIG. 3, in the protective film covering step ST1, the centrifugal rotating table 22 in the casing 21 of the protective film covering device 20 is sucked and held by the back surface 8 on the back side of the front surface 7 of the workpiece 1. The water-soluble protective film solution 11 is applied from the nozzle 23 on the front surface 7 of the workpiece 1 while rotating the centrifugal rotating table 22 around the axis. The water-soluble protective film solution 11 contains a liquid resin which is resistant to plasma etching such as polyvinyl alcohol (PVA) or polyvinyl pyrrolidone (PVP) and which is water-soluble.

在保護膜覆蓋步驟ST1中，將水溶性的保護膜溶液11塗佈在工件1的正面7上之後，使保護膜溶液11硬化，如圖4所示，將保護膜溶液11硬化所構成的電漿蝕刻用保護膜10覆蓋在工件1的整個正面7。在實施方式1中，電漿蝕刻用保護膜10因為是保護膜溶液11硬化所構成，所以是水溶性的。當將電漿蝕刻用保護膜10覆蓋在工件1的整個正面7時，工件加工方法進入第1雷射加工槽形成步驟ST2。In the protective film covering step ST1, after the water-soluble protective film solution 11 is applied onto the front surface 7 of the workpiece 1, the protective film solution 11 is cured, and as shown in FIG. 4, the protective film solution 11 is cured. The slurry etching protective film 10 covers the entire front surface 7 of the workpiece 1. In the first embodiment, the plasma etching protective film 10 is water-soluble because it is formed by curing the protective film solution 11. When the plasma etching protective film 10 is applied over the entire front surface 7 of the workpiece 1, the workpiece processing method proceeds to the first laser processing groove forming step ST2.

（第1雷射加工槽形成步驟） 圖5係表示在圖2所示工件加工方法之第1雷射加工槽形成步驟等所用的雷射加工裝置之立體圖。圖6係表示圖2所示工件加工方法之第1雷射加工槽形成步驟的側剖面圖。圖7係表示圖2所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。(First Laser Processing Groove Forming Step) FIG. 5 is a perspective view showing a laser processing apparatus used in the first laser processing tank forming step and the like of the workpiece processing method shown in FIG. 2 . Fig. 6 is a side cross-sectional view showing a first laser processing groove forming step of the workpiece processing method shown in Fig. 2; Fig. 7 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece processing method shown in Fig. 2;

第1雷射加工槽形成步驟ST2，是沿第1切割道3照射對工件1具有吸收性波長的雷射光束200以形成第1雷射加工槽14的步驟。在第1雷射加工槽形成步驟ST2中，圖5所示雷射加工裝置30的控制單元38將正面7被電漿蝕刻用保護膜10覆蓋的工件1之背面8側吸引保持在卡盤台31上，並且以夾具32夾持環狀框架12。在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38以攝像單元33拍攝保持在卡盤台31上的工件1之正面7，在完成進行工件1與雷射光束照射單元34對位之對準後，使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。In the first laser processing groove forming step ST2, the laser beam 200 having an absorptive wavelength to the workpiece 1 is irradiated along the first scribe line 3 to form the first laser processing groove 14. In the first laser processing groove forming step ST2, the control unit 38 of the laser processing apparatus 30 shown in FIG. 5 sucks and holds the front surface 7 of the workpiece 1 covered by the plasma etching protective film 10 on the chuck side. 31, and the annular frame 12 is clamped by the clamp 32. In the first laser processing groove forming step ST2, the control unit 38 of the laser processing apparatus 30 photographs the front surface 7 of the workpiece 1 held on the chuck table 31 by the image pickup unit 33, and completes the irradiation of the workpiece 1 and the laser beam. After the alignment of the unit 34 is aligned, the rotary unit 35 rotates the chuck table 31 about the axis parallel to the vertical direction (Z-axis direction), and the first cutting lane 3 is parallel to the machining feed direction, that is, the X-axis direction.

在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38使X軸移動單元36在X軸方向上移動卡盤台31，使Y軸移動單元37在Y軸方向上移動卡盤台31，且一邊使第1切割道3與雷射光束照射單元34沿著第1切割道3相對地移動，一邊如圖6所示從雷射光束照射單元34向第1切割道3寬度方向之中央照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38在第1切割道3寬度方向之中央施予燒蝕加工，以除去第1切割道3寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖7以緊密的平行斜線所示，沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1雷射加工槽14。In the first laser machining groove forming step ST2, the control unit 38 of the laser processing device 30 causes the X-axis moving unit 36 to move the chuck table 31 in the X-axis direction, and causes the Y-axis moving unit 37 to move in the Y-axis direction. The chuck table 31 moves the laser beam irradiation unit 34 from the laser beam irradiation unit 34 to the first cutting lane 3 as shown in FIG. 6 while moving the first cutting lane 3 and the laser beam irradiation unit 34 relatively along the first cutting lane 3. The laser beam 200 having an absorptive wavelength (355 nm in the first embodiment) to the workpiece 1 is irradiated at the center in the width direction. In the first laser processing tank forming step ST2, the control unit 38 of the laser processing apparatus 30 applies ablation processing in the center of the width direction of the first cutting lane 3 to remove the electricity in the center of the width direction of the first cutting lane 3. A metal film such as a protective film 10, a Low-k film, and a TEG for slurry etching, as shown by a close parallel oblique line in FIG. 7, forms a first laser beam recessed from the front surface of the substrate 2 along the longitudinal direction of the first scribe line 3. Processing slot 14.

此外，在第1雷射加工槽形成步驟ST2中，雷射加工裝置30的控制單元38在第1切割道3的第1雷射加工槽14之寬度方向兩邊的槽緣上沿著第1切割道3的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑301。再者，加工屑301係形成為從工件1的正面凸起，因為由前述碎片所構成，具有對電漿蝕刻的耐受性。另外，在實施方式1中，於第1雷射加工槽形成步驟ST2，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以500mm/秒之固定速度沿著X軸方向移動卡盤台31。當在工件1的所有第1切割道3上形成第1雷射加工槽14時，工件加工方法進入第2雷射加工槽形成步驟ST3。Further, in the first laser processing groove forming step ST2, the control unit 38 of the laser processing apparatus 30 follows the first cutting on the groove edges on both sides in the width direction of the first laser processing groove 14 of the first cutting path 3. In the longitudinal direction of the track 3, machining chips 301 composed of pieces generated during ablation processing are formed. Further, the machining chips 301 are formed to protrude from the front surface of the workpiece 1, and are formed of the aforementioned chips to have resistance to plasma etching. Further, in the first embodiment, in the first laser machining groove forming step ST2, the control unit 38 of the laser processing device 30 sets the output of the laser beam 200 to 3 W (watt), and causes the X-axis moving unit 36 to The fixed speed of 500 mm/sec moves the chuck table 31 in the X-axis direction. When the first laser machining groove 14 is formed on all of the first cutting passes 3 of the workpiece 1, the workpiece machining method proceeds to the second laser machining groove forming step ST3.

（第2雷射加工槽形成步驟） 圖8係表示圖2所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。(Second laser processing groove forming step) Fig. 8 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece processing method shown in Fig. 2 .

第2雷射加工槽形成步驟ST3，是在實施第1雷射加工槽形成步驟ST2之後，沿第2切割道4照射雷射光束200以形成第2雷射加工槽15的步驟。在實施方式1中，於第2雷射加工槽形成步驟ST3，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第2切割道4與加工進給方向即X軸方向平行。In the second laser processing groove forming step ST3, after the first laser processing groove forming step ST2 is performed, the laser beam 200 is irradiated along the second cutting path 4 to form the second laser processing groove 15. In the first embodiment, in the second laser machining groove forming step ST3, the control unit 38 of the laser processing device 30 rotates the rotary unit 35 around the axis parallel to the vertical direction (Z-axis direction), and The second cutting path 4 is made parallel to the machining feed direction, that is, the X-axis direction.

在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第2切割道4相對地移動第2切割道4與雷射光束照射單元34，一邊從雷射光束照射單元34向第2切割道4寬度方向之中央照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在第2切割道4寬度方向之中央施予燒蝕加工，以除去第2切割道4寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖8以緊密的平行斜線所示，沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2雷射加工槽15。In the second laser machining groove forming step ST3, the control unit 38 of the laser processing device 30 relatively moves the X-axis moving unit 36 and the Y-axis moving unit 37 along the second cutting path 4 to the second cutting path 4 and The laser beam irradiation unit 34 irradiates the laser beam 200 having an absorptive wavelength (355 nm in the first embodiment) to the workpiece 1 from the center of the second scribe line 4 in the width direction from the laser beam irradiation unit 34. In the second laser processing tank forming step ST3, the control unit 38 of the laser processing apparatus 30 applies ablation processing in the center of the width direction of the second cutting lane 4 to remove the electricity in the center of the width direction of the second cutting lane 4. A metal film such as a protective film 10, a Low-k film, and a TEG for slurry etching, as shown by a close parallel oblique line in FIG. 8, forms a second laser beam recessed from the front surface of the substrate 2 along the longitudinal direction of the second scribe line 4. Processing tank 15.

此外，在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在第2切割道4的第2雷射加工槽15之寬度方向兩邊的槽緣上沿著第2切割道4的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑401。此外，在第2雷射加工槽形成步驟ST3中，雷射加工裝置30的控制單元38在形成第2雷射加工槽15時，將在第1雷射加工槽形成步驟ST2形成的加工屑301之中位於切割道3、4彼此的交叉部9之部分303，如圖8所示在第2切割道4上從第1雷射加工槽14寬度方向的端部向中央部延伸。Further, in the second laser processing groove forming step ST3, the control unit 38 of the laser processing apparatus 30 follows the second cutting on the groove edges on both sides in the width direction of the second laser processing groove 15 of the second cutting path 4. In the longitudinal direction of the track 4, machining chips 401 composed of pieces generated during ablation processing are formed. Further, in the second laser processing groove forming step ST3, when the control unit 38 of the laser processing apparatus 30 forms the second laser processing groove 15, the machining chips 301 formed in the first laser machining groove forming step ST2 are formed. The portion 303 located at the intersection portion 9 of the dicing streets 3 and 4 extends from the end portion in the width direction of the first laser processing groove 14 toward the center portion on the second scribe line 4 as shown in Fig. 8 .

另外，加工屑301的部分303係相當於，在第1雷射加工槽形成步驟ST2中產生於第1雷射加工槽14的槽緣，且通過實施第2雷射加工槽形成步驟ST3而在第1切割道3與第2切割道4的交叉部9向第2方向102延伸的加工屑。此外，加工屑401是形成為從工件1的正面7凸起。再者，在實施方式1中，於第2雷射加工槽形成步驟ST3，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以500mm/秒之固定速度沿著X軸方向移動卡盤台31。當在工件1的所有第2切割道4上形成第2雷射加工槽15時，工件加工方法進入清潔步驟ST4。In addition, the portion 303 of the machining chip 301 corresponds to the groove edge generated in the first laser machining groove 14 in the first laser machining groove forming step ST2, and the second laser machining groove forming step ST3 is performed. The machining chips extending in the second direction 102 between the intersection portion 9 of the first cutting lane 3 and the second cutting lane 4 are formed. Further, the machining chips 401 are formed to protrude from the front surface 7 of the workpiece 1. Furthermore, in the first embodiment, in the second laser processing groove forming step ST3, the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watt), and causes the X-axis moving unit 36. The chuck table 31 is moved in the X-axis direction at a fixed speed of 500 mm/sec. When the second laser processing groove 15 is formed on all of the second cutting passes 4 of the workpiece 1, the workpiece processing method proceeds to the cleaning step ST4.

（清潔步驟） 圖9係表示圖2所示工件加工方法之清潔步驟後的工件之正面的一部分之俯視圖。(Cleaning Step) Fig. 9 is a plan view showing a part of the front surface of the workpiece after the cleaning step of the workpiece processing method shown in Fig. 2.

清潔步驟ST4，是在實施第2雷射加工槽形成步驟ST3之後，沿第1切割道3照射雷射光束200以除去前述加工屑301之部分303的步驟。在實施方式1中，於清潔步驟ST4，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。The cleaning step ST4 is a step of irradiating the laser beam 200 along the first scribe line 3 to remove the portion 303 of the machining chip 301 after the second laser machining groove forming step ST3 is performed. In the first embodiment, in the cleaning step ST4, the control unit 38 of the laser processing apparatus 30 rotates the rotary unit 35 around the axis parallel to the vertical direction (Z-axis direction), and causes the first cutting path 3 to be rotated. It is parallel to the machining feed direction, that is, the X-axis direction.

在清潔步驟ST4中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第1切割道3相對地移動第1切割道3與雷射光束照射單元34，一邊從雷射光束照射單元34向形成在第1切割道3寬度方向之中央的第1雷射加工槽14照射對工件1具有吸收性波長（在實施方式1中為355nm）的雷射光束200。清潔步驟ST4中，雷射加工裝置30的控制單元38在形成於第1切割道3寬度方向之中央的第1雷射加工槽14內施予燒蝕加工，如圖9所示，除去加工屑301的前述部分303。In the cleaning step ST4, the control unit 38 of the laser processing apparatus 30 relatively moves the X-axis moving unit 36 and the Y-axis moving unit 37 along the first cutting lane 3 to the first cutting lane 3 and the laser beam irradiation unit 34. The laser beam irradiation unit 34 is irradiated to the first laser processing groove 14 formed at the center in the width direction of the first scribe line 3 by a laser beam having an absorptive wavelength (355 nm in the first embodiment) for the workpiece 1. 200. In the cleaning step ST4, the control unit 38 of the laser processing apparatus 30 applies ablation processing in the first laser processing tank 14 formed at the center in the width direction of the first cutting lane 3, and removes the machining waste as shown in FIG. The aforementioned portion 303 of 301.

如此一來，實施方式1的工件加工方法，藉由形成第1雷射加工槽14及第2雷射加工槽15，並除去加工屑301的部分303，以實施第1雷射加工槽形成步驟ST2、第2雷射加工槽形成步驟ST3及清潔步驟ST4的方式來使位在第1切割道3及第2切割道4兩者的基板2露出。In the workpiece processing method according to the first embodiment, the first laser processing groove 14 and the second laser processing groove 15 are formed, and the portion 303 of the machining chip 301 is removed to perform the first laser processing groove forming step. In the ST2 and the second laser processing groove forming step ST3 and the cleaning step ST4, the substrate 2 positioned in both the first scribe line 3 and the second scribe line 4 is exposed.

再者，在實施方式1中，於清潔步驟ST4，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以較第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3高速的600mm/秒之固定速度，沿著X軸方向移動卡盤台31。如此一來，在實施方式1的工件加工方法之清潔步驟ST4中，加工進給速度即卡盤台31的X軸方向的移動速度，與第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3相比較為快速。另外，在實施方式1中，於雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4，雖使用圖5所示雷射加工裝置30，但在雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4中所使用的雷射加工裝置，並不限定為圖5所示者。當雷射光束200照射到工件的所有第1切割道3之第1雷射加工槽14時，工件加工方法進入電漿蝕刻步驟ST5。Further, in the first embodiment, in the cleaning step ST4, the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and causes the X-axis moving unit 36 to be the first laser. In the machining groove forming step ST2 and the second laser machining groove forming step ST3, the fixed speed of 600 mm/sec at a high speed is performed, and the chuck table 31 is moved in the X-axis direction. In the cleaning step ST4 of the workpiece processing method according to the first embodiment, the machining feed speed, that is, the moving speed of the chuck table 31 in the X-axis direction, and the first laser machining groove forming step ST2 and the second laser are performed. The processing tank forming step ST3 is relatively fast. Further, in the first embodiment, in the laser processing groove forming steps ST2, ST3 and the cleaning step ST4, the laser processing apparatus 30 shown in Fig. 5 is used, but in the laser processing tank forming steps ST2, ST3 and the cleaning step ST4. The laser processing apparatus used in the invention is not limited to that shown in FIG. When the laser beam 200 is irradiated to the first laser processing grooves 14 of all the first dicing streets 3 of the workpiece, the workpiece processing method enters the plasma etching step ST5.

又，在實施方式1的雷射加工槽形成步驟ST2、ST3以及清潔步驟ST4所用的前述雷射加工裝置30，具備：卡盤台31，夾具部32，攝像單元33，雷射光束照射單元34，旋轉單元35，X軸移動單元36，Y軸移動單元37，以及控制單元38。控制單元38是分別控制雷射加工裝置30的各個構成要素，以使雷射加工裝置30對工件1實施加工動作者。另外，控制單元38為電子計算機，具有：運算處理裝置，其具有如CPU（central processing unit，中央處理器）的微處理器；記憶裝置，其具有如ROM（read only memory，唯讀記憶體）或RAM（random access memory，隨機存取記憶體）的記憶體；以及輸入輸出介面裝置。控制單元38的運算處理裝置，根據儲存在記憶裝置的電腦程式實施運算處理，將用於控制雷射加工裝置30的控制訊號，透過輸入輸出介面裝置輸出至雷射加工裝置30的上述構成要素。控制單元38係連接至：未圖示的顯示單元，其由顯示加工動作的狀態或圖像的液晶顯示裝置等所構成；未圖示的輸入單元，其用於操作員將加工內容資訊等登錄時；以及未圖示的通知單元。輸入單元係由設於顯示單元的觸控面板及鍵盤等外部輸入裝置的至少其中之一所構成。Further, the laser processing apparatus 30 used in the laser processing tank forming steps ST2 and ST3 and the cleaning step ST4 of the first embodiment includes a chuck table 31, a clamp unit 32, an imaging unit 33, and a laser beam irradiation unit 34. The rotation unit 35, the X-axis moving unit 36, the Y-axis moving unit 37, and the control unit 38. The control unit 38 controls the respective constituent elements of the laser processing apparatus 30 so that the laser processing apparatus 30 performs processing on the workpiece 1. In addition, the control unit 38 is an electronic computer having: an arithmetic processing device having a microprocessor such as a CPU (central processing unit); and a memory device having a ROM (read only memory) Or RAM (random access memory) memory; and input and output interface devices. The arithmetic processing unit of the control unit 38 performs arithmetic processing based on the computer program stored in the memory device, and outputs the control signal for controlling the laser processing device 30 to the above-described constituent elements of the laser processing device 30 through the input/output interface device. The control unit 38 is connected to a display unit (not shown), which is constituted by a liquid crystal display device or the like that displays a state or an image of a machining operation, and an input unit (not shown) for the operator to log in the processed content information or the like. Time; and a notification unit not shown. The input unit is composed of at least one of an external input device such as a touch panel and a keyboard provided on the display unit.

（電漿蝕刻步驟） 圖10係表示在圖2所示工件加工方法之電漿蝕刻步驟所用的蝕刻裝置的構成之剖面圖。(plasma etching step) Fig. 10 is a cross-sectional view showing the configuration of an etching apparatus used in the plasma etching step of the workpiece processing method shown in Fig. 2.

電漿蝕刻步驟ST5，係在實施清潔步驟ST4之後，透過電漿蝕刻用保護膜10在工件1上施予電漿蝕刻之步驟。在電漿蝕刻步驟ST5中，圖10所示蝕刻裝置40打開閘閥41，將工件1從搬入搬出口42搬入至腔室43內，透過黏著膠帶13將工件1的背面8側靜電保持在靜電卡盤（ESC：Electrostatic chuck）44上。另外，在將工件1靜電保持在靜電卡盤44之時，透過整合器45將高頻電源46的電力供給至靜電卡盤44的電極47。The plasma etching step ST5 is a step of applying plasma etching to the workpiece 1 through the plasma etching protective film 10 after the cleaning step ST4 is performed. In the plasma etching step ST5, the etching apparatus 40 shown in FIG. 10 opens the gate valve 41, carries the workpiece 1 from the loading/unloading port 42 into the chamber 43, and electrostatically holds the back surface 8 side of the workpiece 1 on the electrostatic card through the adhesive tape 13. On the disc (ESC: Electrostatic chuck) 44. Further, when the workpiece 1 is electrostatically held by the electrostatic chuck 44, the power of the high-frequency power source 46 is supplied to the electrode 47 of the electrostatic chuck 44 through the integrator 45.

接著，在電漿蝕刻步驟ST5中，蝕刻裝置40通過排氣管48藉由排氣裝置49將腔室43減壓，並使腔室43內的壓力成為例如0.10~0.15Pa，同時使靜電卡盤44的溫度成為不會從黏著膠帶13產生氣體的溫度，例如設為70℃以下，蝕刻露出在切割道5的基板2，並交替反覆進行使雷射加工槽14、15向背面8深入的蝕刻步驟以及接在蝕刻步驟之後使薄膜堆積在雷射加工槽14、15之內表面的薄膜堆積步驟。再者，薄膜堆積步驟後的蝕刻步驟，除去雷射加工槽14、15槽底的薄膜以蝕刻雷射加工槽14、15的槽底。如此一來，電漿蝕刻步驟ST5是以所謂的博世法（Bosch法）電漿蝕刻工件1。Next, in the plasma etching step ST5, the etching device 40 decompresses the chamber 43 through the exhaust unit 48 through the exhaust unit 49, and causes the pressure in the chamber 43 to become, for example, 0.10 to 0.15 Pa, while making the electrostatic card The temperature of the disk 44 is a temperature at which no gas is generated from the adhesive tape 13, and is, for example, 70 ° C or less, and the substrate 2 exposed to the scribe line 5 is etched, and the laser processing grooves 14 and 15 are alternately repeated to the back surface 8 . The etching step and the film stacking step of depositing the film on the inner surface of the laser processing grooves 14, 15 after the etching step. Further, in the etching step after the film stacking step, the film of the bottom of the laser processing grooves 14 and 15 is removed to etch the groove bottoms of the laser processing grooves 14, 15. As a result, the plasma etching step ST5 etches the workpiece 1 by a so-called Bosch method.

另外，在蝕刻步驟中，蝕刻裝置40使來自氣體供給部50的蝕刻氣體即SF6 氣體透過氣體配管51及氣體導入口52從氣體噴出頭53的氣體吐出部54噴射。接著，蝕刻裝置40在已供給產生電漿用的SF６氣體之狀態下，透過整合器55從高頻電源56對氣體噴出頭53施加維持製造電漿的高頻電力，並從高頻電源56對靜電卡盤44施加用於吸引離子的高頻電力。藉此，在靜電卡盤44與氣體噴出頭53之間的空間中，產生由SF6 氣體所組成具有各同向性的電漿，該電漿被吸引至工件1的基板2，蝕刻雷射加工槽14、15的槽底，並使雷射加工槽14、15向工件1的背面8深入。In the etching step, the etching device 40 causes the SF 6 gas, which is an etching gas from the gas supply unit 50 , to be ejected from the gas discharge portion 54 of the gas ejection head 53 through the gas pipe 51 and the gas introduction port 52 . Then, in the state where the SF6 gas for plasma generation is supplied, the etching device 40 applies the high-frequency electric power for maintaining the plasma to the gas ejection head 53 from the high-frequency power source 56 through the integrator 55, and the pair of high-frequency power sources 56 are paired. The electrostatic chuck 44 applies high frequency power for attracting ions. Thereby, in the space between the electrostatic chuck 44 and the gas ejection head 53, a plasma having an isotropic property composed of SF 6 gas is generated, the plasma is attracted to the substrate 2 of the workpiece 1, and the laser is etched. The groove bottoms of the grooves 14, 15 are machined, and the laser processing grooves 14, 15 are penetrated toward the back surface 8 of the workpiece 1.

此外，在薄膜堆積步驟中，蝕刻裝置40從氣體供給部50將堆積性氣體即C4 F8 氣體，從氣體噴出頭53的多個氣體吐出部54向保持在靜電卡盤44上的工件1噴出。接著，蝕刻裝置40在已供給產生電漿用的C4 F8 氣體之狀態下，從高頻電源56對氣體噴出頭53施加維持製造電漿的高頻電力，並從高頻電源56對靜電卡盤44施加用於吸引離子的高頻電力。藉此，在靜電卡盤44與氣體噴出頭53之的空間中，產生由C4 F8 氣體組成的電漿，該電漿被吸引至工件1的基板2，並使薄膜堆積在雷射加工槽14、15的內表面。Further, in the film stacking step, the etching apparatus 40 transfers the C 4 F 8 gas, which is a build-up gas, from the gas supply unit 50 to the workpiece 1 held by the electrostatic chuck 44 from the plurality of gas discharge portions 54 of the gas discharge head 53. ejection. Next, the etching apparatus 40 applies high-frequency power for maintaining the plasma to the gas ejection head 53 from the high-frequency power source 56 in a state where the C 4 F 8 gas for plasma generation is supplied, and the static electricity is supplied from the high-frequency power source 56. The chuck 44 applies high frequency power for attracting ions. Thereby, in the space between the electrostatic chuck 44 and the gas ejection head 53, a plasma composed of C 4 F 8 gas is generated, the plasma is attracted to the substrate 2 of the workpiece 1, and the film is deposited in the laser processing. The inner surfaces of the grooves 14, 15.

於電漿蝕刻步驟ST5，蝕刻裝置40根據雷射加工槽14、15的深度及工件1的厚度，預先設定蝕刻步驟及薄膜堆積步驟重複的次數。在電漿蝕刻步驟ST5中，經反覆進行了預先設定次數的蝕刻步驟及薄膜堆積步驟的工件1，雷射加工槽14、15到達背面80側，並被分割為個個元件6。再者，在實施方式1中，於電漿蝕刻步驟ST5，雖使用圖10所示蝕刻裝置40，但在本發明中，用於電漿蝕刻步驟ST5的蝕刻裝置並不限定為圖10所示者。工件加工方法在將工件1分割為個個元件6時結束。另外之後，工件1在進行例如清洗水被供給至正面7等，電漿蝕刻用保護膜10被除去之後，個個元件6被從黏著膠帶13上拾取。In the plasma etching step ST5, the etching apparatus 40 sets the number of times the etching step and the film stacking step are repeated in advance based on the depths of the laser processing grooves 14, 15 and the thickness of the workpiece 1. In the plasma etching step ST5, the workpiece 1 in which the etching step and the film stacking step are repeated a predetermined number of times is performed, and the laser processing grooves 14, 15 reach the back surface 80 side, and are divided into individual elements 6. Further, in the first embodiment, the etching apparatus 40 shown in FIG. 10 is used in the plasma etching step ST5. However, in the present invention, the etching apparatus used in the plasma etching step ST5 is not limited to that shown in FIG. By. The workpiece machining method ends when the workpiece 1 is divided into individual elements 6. After that, the workpiece 1 is supplied with, for example, washing water to the front surface 7 or the like, and after the plasma etching protective film 10 is removed, the individual elements 6 are picked up from the adhesive tape 13.

實施方式1的工件加工方法，是在實施第1雷射加工槽形成步驟ST2及第2雷射加工槽形成步驟ST3之後，藉由實施清潔步驟ST4，除去加工屑301的部分303。因此，實施方式1的工件加工方法，在清潔步驟ST4的後續步驟之電漿蝕刻步驟ST5中，能夠抑制加工屑301的部分303對電漿蝕刻的阻礙。其結果，工件加工方法能夠降低在清潔步驟ST4的後續步驟中產生問題的風險。In the workpiece processing method according to the first embodiment, after the first laser processing groove forming step ST2 and the second laser processing groove forming step ST3 are performed, the portion 303 of the machining chips 301 is removed by performing the cleaning step ST4. Therefore, in the workpiece processing method of the first embodiment, in the plasma etching step ST5 of the subsequent step of the cleaning step ST4, it is possible to suppress the blockage of the portion 303 of the machining chips 301 from the plasma etching. As a result, the workpiece processing method can reduce the risk of causing problems in the subsequent steps of the cleaning step ST4.

此外，實施方式1的工件加工方法，是在保護膜覆蓋步驟ST1中在工件1的正面7上覆蓋電漿蝕刻用保護膜10，在雷射加工槽形成步驟ST2、ST3及清潔步驟ST4中使切割道5的基板2露出，並在電漿蝕刻步驟ST5中對工件1施予電漿蝕刻。因此，工件加工方法能夠將工件1分割為個個元件6。Further, in the workpiece processing method according to the first embodiment, the plasma etching protective film 10 is covered on the front surface 7 of the workpiece 1 in the protective film covering step ST1, and is formed in the laser processing groove forming steps ST2 and ST3 and the cleaning step ST4. The substrate 2 of the dicing street 5 is exposed, and the workpiece 1 is subjected to plasma etching in the plasma etching step ST5. Therefore, the workpiece processing method can divide the workpiece 1 into individual elements 6.

又，實施方式1的工件加工方法，因為在清潔步驟ST4中卡盤台31的移動速度比雷射加工槽形成步驟ST2、ST3要快，即使實施清潔步驟ST4，也能夠抑制工件1加工所需時間的長時間化。Further, in the workpiece processing method according to the first embodiment, since the moving speed of the chuck table 31 in the cleaning step ST4 is faster than the laser processing groove forming steps ST2 and ST3, even if the cleaning step ST4 is performed, the processing of the workpiece 1 can be suppressed. The long time of time.

（實施方式2） 根據圖式說明本發明實施方式2的工件加工方法。圖11係表示實施方式2之工件加工方法的流程之流程圖。圖12係表示圖11所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。圖13係表示圖11所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。圖14係表示圖11所示工件加工方法之第1寬幅槽形成步驟後的工件之正面的一部分之俯視圖。圖15係表示圖11所示工件加工方法之第2寬幅槽形成步驟後的工件之正面的一部分之俯視圖。另外，圖11到圖15中，與實施方式1相同部分標記相同符號並省略說明。(Embodiment 2) A workpiece processing method according to Embodiment 2 of the present invention will be described with reference to the drawings. Fig. 11 is a flow chart showing the flow of the workpiece processing method of the second embodiment. Fig. 12 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece processing method shown in Fig. 11; Fig. 13 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece processing method shown in Fig. 11; Fig. 14 is a plan view showing a part of the front surface of the workpiece after the first wide groove forming step of the workpiece processing method shown in Fig. 11; Fig. 15 is a plan view showing a part of the front surface of the workpiece after the second wide groove forming step of the workpiece processing method shown in Fig. 11; In the same manner as in the first embodiment, the same portions as those in the first embodiment are denoted by the same reference numerals, and their description will be omitted.

實施方式2的工件加工方法是如圖11所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2-2，第2雷射加工槽形成步驟ST3-2，作為清潔步驟的第1寬幅槽形成步驟ST6及第2寬幅槽形成步驟ST7，以及電漿蝕刻步驟ST5。As shown in FIG. 11, the workpiece processing method according to the second embodiment includes a protective film covering step ST1, a first laser processing groove forming step ST2-2, and a second laser processing groove forming step ST3-2 as a cleaning step. The first wide groove forming step ST6 and the second wide groove forming step ST7, and the plasma etching step ST5.

實施方式2的工件加工方法之第1雷射加工槽形成步驟ST2-2，是與實施方式1相同，沿第1切割道3照射對工件1具有吸收性波長的雷射光束200以形成第1雷射加工槽14-2的步驟。在實施方式2中，於第1雷射加工槽形成步驟ST2-2，雷射加工裝置30的控制單元38在第1切割道3寬度方向之兩側部施予燒蝕加工，以除去第1切割道3寬度方向之兩側部各別的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖12以緊密的平行斜線所示，沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1雷射加工槽14-2。在實施方式2的工件加工方法之第1雷射加工槽形成步驟ST2-2中，在第1切割道3寬度方向的兩側部各別形成較實施方式1的第1雷射加工槽14寬度窄的第1雷射加工槽14-2。In the first laser processing groove forming step ST2-2 of the workpiece processing method according to the second embodiment, as in the first embodiment, the laser beam 200 having an absorptive wavelength to the workpiece 1 is irradiated along the first scribe line 3 to form the first step. The step of laser processing the slot 14-2. In the second embodiment, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing apparatus 30 applies ablation processing on both sides in the width direction of the first cutting lane 3 to remove the first step. A metal film such as a protective film 10 for plasma etching, a Low-k film, and a TEG on both sides in the width direction of the dicing street 3, as shown by a close parallel oblique line in FIG. 12, along the length of the first scribe line 3. The first laser processing groove 14-2 recessed from the front surface of the substrate 2 is formed in the direction. In the first laser processing groove forming step ST2-2 of the workpiece processing method according to the second embodiment, the width of the first laser processing groove 14 of the first embodiment is formed on both sides in the width direction of the first cutting path 3. The narrow first laser processing slot 14-2.

此外，在第1雷射加工槽形成步驟ST2-2中，雷射加工裝置30的控制單元38，與實施方式1相同，在第1切割道3的第1雷射加工槽14-2之寬度方向兩邊的槽緣上沿著第1切割道3的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑301。再者，在實施方式2中，於第1雷射加工槽形成步驟ST2-2，雷射加工裝置30的控制單元38將雷射光束200的波長設為355nm，將雷射光束200的輸出設為2.5W（瓦特），並使X軸移動單元36以300mm/秒之固定速度沿著X軸方向移動卡盤台31。Further, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing apparatus 30 is the same as the first embodiment, and the width of the first laser processing groove 14-2 of the first cutting path 3 is the same. Machining chips 301 composed of chips generated during ablation processing are formed along the longitudinal direction of the first cutting lane 3 on the groove edges on both sides of the direction. Further, in the second embodiment, in the first laser processing groove forming step ST2-2, the control unit 38 of the laser processing device 30 sets the wavelength of the laser beam 200 to 355 nm, and sets the output of the laser beam 200. It is 2.5 W (watt), and the X-axis moving unit 36 is moved to the chuck table 31 in the X-axis direction at a fixed speed of 300 mm/sec.

實施方式2的工件加工方法之第2雷射加工槽形成步驟ST3-2，與實施方式1相同，是在實施第1雷射加工槽形成步驟ST2-2之後，沿第2切割道4照射雷射光束200以形成第2雷射加工槽15-2的步驟。在實施方式2中，於第2雷射加工槽形成步驟ST3-2，雷射加工裝置30的控制單元38在第2切割道4寬度方向之兩側部施予燒蝕加工，以除去第2切割道4寬度方向之兩側部各別的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖13以緊密的平行斜線所示，沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2雷射加工槽15-2。在實施方式2的工件加工方法之第2雷射加工槽形成步驟ST3-2中，在第2切割道4寬度方向的兩側部各別形成較實施方式1的第2雷射加工槽15寬度窄的第2雷射加工槽15-2。In the second laser processing groove forming step ST3-2 of the workpiece processing method according to the second embodiment, in the same manner as in the first embodiment, after the first laser processing groove forming step ST2-2 is performed, the second cutting channel 4 is irradiated with the thunder. The light beam 200 is irradiated to form the second laser processing groove 15-2. In the second embodiment, in the second laser machining groove forming step ST3-2, the control unit 38 of the laser processing device 30 applies ablation processing on both sides in the width direction of the second cutting path 4 to remove the second portion. Each of the plasma etching protective film 10, Low-k film, and metal film such as TEG on both sides in the width direction of the dicing street 4 is shown by a parallel parallel oblique line along the length of the second scribe line 4 as shown in FIG. The second laser processing groove 15-2 recessed from the front surface of the substrate 2 is formed in the direction. In the second laser processing groove forming step ST3-2 of the workpiece processing method according to the second embodiment, the width of the second laser processing groove 15 of the first embodiment is formed on both sides in the width direction of the second cutting path 4. The narrow second laser processing slot 15-2.

此外，在第2雷射加工槽形成步驟ST3-2中，雷射加工裝置30的控制單元38，與實施方式1相同，在第2切割道4的第2雷射加工槽15-2之寬度方向兩邊的槽緣上沿著第2切割道4的長度方向，形成燒蝕加工時產生的碎片所構成的加工屑401。此外，在第2雷射加工槽形成步驟ST3-2中，雷射加工裝置30的控制單元38在形成第2雷射加工槽15-2時，將在第1雷射加工槽形成步驟ST2-2形成的加工屑301之中位於切割道14-2、15-2彼此的交叉部9之部分303，如圖13所示在第2切割道4上從第1雷射加工槽14-2寬度方向的端部向中央部延伸。Further, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30 is the same as the first embodiment, and the width of the second laser processing groove 15-2 of the second cutting path 4 is obtained. On the groove edges on both sides of the direction, along the longitudinal direction of the second cutting path 4, machining chips 401 composed of pieces generated during ablation processing are formed. Further, in the second laser processing groove forming step ST3-2, when the control unit 38 of the laser processing apparatus 30 forms the second laser processing groove 15-2, the first laser processing groove forming step ST2- Among the machining chips 301 formed, the portion 303 of the intersection portion 9 between the cutting passages 14-2 and 15-2 is widened from the first laser machining groove 14-2 on the second cutting passage 4 as shown in FIG. The end of the direction extends toward the central portion.

另外，加工屑301的部分303係相當於，在第1雷射加工槽形成步驟ST2-2中產生於第1雷射加工槽14-2的槽緣，且通過實施第2雷射加工槽形成步驟ST3-2而在第1切割道3與第2切割道4的交叉部9向第2方向102延伸的加工屑。再者，在實施方式2中，於第2雷射加工槽形成步驟ST3-2，雷射加工裝置30的控制單元38將雷射光束200的波長設為355nm，將雷射光束200的輸出設為2.5W（瓦特），並使X軸移動單元36以300mm/秒之固定速度沿著X軸方向移動卡盤台31。Further, the portion 303 of the machining chip 301 corresponds to the groove edge generated in the first laser machining groove 14-2 in the first laser machining groove forming step ST2-2, and is formed by performing the second laser machining groove. In step ST3-2, the machining chips extending in the second direction 102 at the intersection portion 9 of the first cutting lane 3 and the second cutting lane 4 are formed. Further, in the second embodiment, in the second laser processing groove forming step ST3-2, the control unit 38 of the laser processing apparatus 30 sets the wavelength of the laser beam 200 to 355 nm, and sets the output of the laser beam 200. It is 2.5 W (watt), and the X-axis moving unit 36 is moved to the chuck table 31 in the X-axis direction at a fixed speed of 300 mm/sec.

在實施方式2中的工件加工方法之第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第1切割道3與加工進給方向即X軸方向平行。在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第1切割道3相對地移動第1切割道3與雷射光束照射單元34，一邊從雷射光束照射單元34向第1切割道3寬度方向之中央照射對工件1具有吸收性波長（在實施方式2中為355nm）的雷射光束200。在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38在第1切割道3寬度方向之中央施予燒蝕加工，以除去第1切割道3寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖14以粗的平行斜線所示，在第1雷射加工槽14-2之間且沿著第1切割道3的長度方向形成從基板2的正面凹陷的第1寬幅槽16。第1寬幅槽形成步驟ST6中形成的第1寬幅槽16是與第1雷射加工槽14-2連通。In the first wide groove forming step ST6 of the workpiece processing method in the second embodiment, the control unit 38 of the laser processing apparatus 30 rotates the rotary unit 35 around the axis parallel to the vertical direction (Z-axis direction). 31, and the first cutting lane 3 is parallel to the machining feed direction, that is, the X-axis direction. In the first wide groove forming step ST6, the control unit 38 of the laser processing apparatus 30 relatively moves the X-axis moving unit 36 and the Y-axis moving unit 37 along the first cutting path 3 to the first cutting path 3 and the thunder. The laser beam irradiation unit 34 illuminates the laser beam 200 having an absorptive wavelength (355 nm in the second embodiment) to the workpiece 1 from the center of the first scribe line 3 in the width direction from the laser beam irradiation unit 34. In the first wide groove forming step ST6, the control unit 38 of the laser processing apparatus 30 applies ablation processing in the center of the width direction of the first cutting pass 3 to remove the plasma in the center of the width direction of the first cutting pass 3. A metal film such as a protective film 10, a Low-k film, and a TEG for etching is shown as a thick parallel oblique line between the first laser processing grooves 14-2 and along the length of the first cutting track 3 as shown in FIG. A first wide groove 16 recessed from the front surface of the substrate 2 is formed. The first wide groove 16 formed in the first wide groove forming step ST6 is in communication with the first laser processing groove 14-2.

此外，在第1寬幅槽形成步驟ST6中，雷射加工裝置30的控制單元38在除去形成在第1雷射加工槽14-2寬度方向之槽緣的加工屑301之中靠近第1切割道3的加工屑301的同時，除去靠第1切割道3外側的加工屑301之部分303之中位在第1寬幅槽16內的部分。在實施方式2中，於第1寬幅槽形成步驟ST6，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以600mm/秒之固定速度沿著X軸方向移動卡盤台31。如此，第1寬幅槽形成步驟ST6在實施第2雷射加工槽形成步驟ST3-2之後，沿第1切割道3照射雷射光束200以除去前述加工屑301之部分303的清潔步驟。此外，在第1寬幅槽形成步驟ST6中，加工進給速度即卡盤台31的X軸方向的移動速度，與第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2相比較為快速。Further, in the first wide groove forming step ST6, the control unit 38 of the laser processing apparatus 30 approaches the first cutting among the machining chips 301 which are formed in the groove edge formed in the width direction of the first laser machining groove 14-2. At the same time as the machining chips 301 of the lane 3, the portion of the portion 303 of the machining chips 301 outside the first cutting lane 3 which is located in the first wide groove 16 is removed. In the second embodiment, in the first wide groove forming step ST6, the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and causes the X-axis moving unit 36 to have 600 mm/second. The fixed speed moves the chuck table 31 in the X-axis direction. In the first wide groove forming step ST6, after the second laser processing groove forming step ST3-2 is performed, the laser beam 200 is irradiated along the first cutting path 3 to remove the portion 303 of the machining chip 301. Further, in the first wide groove forming step ST6, the machining feed speed, that is, the moving speed of the chuck table 31 in the X-axis direction, is formed in the first laser machining groove forming step ST2-2 and the second laser machining groove. Step ST3-2 is relatively fast.

在實施方式2中的工件加工方法之第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38使旋轉單元35繞與垂直方向（Z軸方向）平行的軸心旋轉卡盤台31，並使第2切割道4與加工進給方向即X軸方向平行。在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38一邊使X軸移動單元36及Y軸移動單元37沿著第2切割道4相對地移動第2切割道4與雷射光束照射單元34，一邊從雷射光束照射單元34向第2切割道4寬度方向之中央照射對工件1具有吸收性波長（在實施方式2中為355nm）的雷射光束200。在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38在第2切割道4寬度方向之中央施予燒蝕加工，以除去第2切割道4寬度方向之中央的電漿蝕刻用保護膜10、Low-k膜及TEG等金屬膜，如圖15以粗的平行斜線所示，在第2雷射加工槽15-2之間且沿著第2切割道4的長度方向形成從基板2的正面凹陷的第2寬幅槽17。第2寬幅槽形成步驟ST7中形成的第2寬幅槽17是與第2雷射加工槽15-2連通。In the second wide groove forming step ST7 of the workpiece processing method in the second embodiment, the control unit 38 of the laser processing apparatus 30 rotates the rotary unit 35 around the axis parallel to the vertical direction (Z-axis direction). 31, and the second cutting path 4 is made parallel to the machining feed direction, that is, the X-axis direction. In the second wide groove forming step ST7, the control unit 38 of the laser processing apparatus 30 relatively moves the X-axis moving unit 36 and the Y-axis moving unit 37 along the second cutting path 4 to the second cutting path 4 and the thunder. The laser beam irradiation unit 34 irradiates the laser beam 200 having the absorptive wavelength (355 nm in the second embodiment) to the workpiece 1 from the laser beam irradiation unit 34 toward the center in the width direction of the second scribe line 4. In the second wide groove forming step ST7, the control unit 38 of the laser processing apparatus 30 applies ablation processing in the center of the width direction of the second cutting path 4 to remove the plasma in the center in the width direction of the second cutting path 4. The metal film such as the protective film 10 for the etching, the Low-k film, and the TEG is as shown by the thick parallel oblique lines in the longitudinal direction of the second laser cutting groove 15-2 and along the second cutting path 4. A second wide groove 17 recessed from the front surface of the substrate 2 is formed. The second wide groove 17 formed in the second wide groove forming step ST7 is in communication with the second laser processing groove 15-2.

此外，在第2寬幅槽形成步驟ST7中，雷射加工裝置30的控制單元38除去形成在第2雷射加工槽15寬度方向之槽緣的加工屑401之中靠近第2切割道4的加工屑401。在實施方式2中，於第2寬幅槽形成步驟ST7，雷射加工裝置30的控制單元38將雷射光束200的輸出設為3W（瓦特），並使X軸移動單元36以600mm/秒之固定速度沿著X軸方向移動卡盤台31。Further, in the second wide groove forming step ST7, the control unit 38 of the laser processing apparatus 30 removes the machining chips 401 formed in the groove edge in the width direction of the second laser machining groove 15 from the second cutting path 4. Processing chips 401. In the second embodiment, in the second wide groove forming step ST7, the control unit 38 of the laser processing apparatus 30 sets the output of the laser beam 200 to 3 W (watts), and causes the X-axis moving unit 36 to have 600 mm/sec. The fixed speed moves the chuck table 31 in the X-axis direction.

實施方式2的工件加工方法，是在實施第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2之後，藉由實施清潔步驟即第1寬幅槽形成步驟ST6，除去加工屑301的部分303。因此，實施方式2的工件加工方法，在第1寬幅槽形成步驟ST6的後續步驟之電漿蝕刻步驟ST5中，能夠抑制加工屑301的部分303對電漿蝕刻的阻礙。其結果，工件加工方法與實施方式1相同，能夠降低在第1寬幅槽形成步驟ST6的後續步驟中產生問題的風險。In the workpiece processing method according to the second embodiment, after the first laser processing groove forming step ST2-2 and the second laser processing groove forming step ST3-2 are performed, the first wide groove forming step ST6 is performed by performing the cleaning step. The portion 303 of the machining chips 301 is removed. Therefore, in the workpiece processing method of the second embodiment, in the plasma etching step ST5 of the subsequent step of the first wide groove forming step ST6, it is possible to suppress the etching of the portion 303 of the machining chips 301 against the plasma etching. As a result, the workpiece processing method is the same as that of the first embodiment, and the risk of causing a problem in the subsequent step of the first wide groove forming step ST6 can be reduced.

此外，實施方式2的工件加工方法在雷射加工槽形成步驟ST2-2、ST3-2中，因為在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2，所以能夠抑制Low-k膜從基板2剝離。Further, in the workpiece machining method according to the second embodiment, in the laser processing groove forming steps ST2-2 and ST3-2, the laser beam having a narrower width than that of the first embodiment is formed on both sides in the width direction of the dicing streets 3 and 4. Since the grooves 14-2 and 15-2 are processed, it is possible to suppress peeling of the Low-k film from the substrate 2.

（變形例） 以下說明實施方式1及實施方式2的變形例之工件1的加工方法。實施方式1及實施方式2的工件加工方法在保護膜覆蓋步驟ST1中，雖以水溶性的保護膜溶液11塗佈，但在本發明中，也可以用硬化後具有電漿耐受性的液體即光阻劑（Resist）塗佈在工件1之整個正面7，進行曝光、顯影，以除去切割道5上的光阻劑。另外，在塗佈光阻劑時，例如將工件1保持在繞軸心旋轉的旋轉台之後，一邊使旋轉台繞軸心旋一邊供給光阻劑至正面7。此外，變形例之工件1的加工方法在雷射加工槽形成步驟ST2、ST2-2、ST3及ST3-2中，與實施方式1及實施方式2相同，施予燒蝕以除去Low-k膜，形成雷射加工槽14、14-2，15及15-2。此外，變形例之工件1的加工方法，在除去光阻劑時，進行習知的灰化（Ashing）。(Modification) A method of processing the workpiece 1 according to the modification of the first embodiment and the second embodiment will be described below. In the protective film covering step ST1, the workpiece processing method according to the first embodiment and the second embodiment is applied with the water-soluble protective film solution 11. However, in the present invention, the liquid having plasma resistance after curing may be used. That is, a photoresist (Resist) is applied to the entire front surface 7 of the workpiece 1, and exposure and development are performed to remove the photoresist on the dicing street 5. Further, when the photoresist is applied, for example, after the workpiece 1 is held on a rotary table that rotates around the axis, the photoresist is supplied to the front surface 7 while rotating the rotary table around the axis. Further, in the processing method of the workpiece 1 according to the modification, in the laser processing groove forming steps ST2, ST2-2, ST3, and ST3-2, ablation is performed to remove the Low-k film in the same manner as in the first embodiment and the second embodiment. The laser processing grooves 14, 14-2, 15 and 15-2 are formed. Further, in the method of processing the workpiece 1 according to the modification, conventional ashing is performed when the photoresist is removed.

（實施方式3） 根據圖式說明本發明實施方式3的工件加工方法。圖16係表示實施方式3之工件加工方法的流程之流程圖。圖17係表示圖16所示工件加工方法之第1雷射加工槽形成步驟及第2雷射加工槽形成步驟的側剖面圖。圖18係表示圖16所示工件加工方法之切割步驟的側剖面圖。另外，圖16到圖18中，與實施方式1及實施方式2相同部分標記相同符號並省略說明。(Embodiment 3) A workpiece processing method according to Embodiment 3 of the present invention will be described with reference to the drawings. Fig. 16 is a flow chart showing the flow of the workpiece processing method of the third embodiment. Fig. 17 is a side cross-sectional view showing a first laser processing groove forming step and a second laser processing groove forming step in the workpiece processing method shown in Fig. 16. Figure 18 is a side cross-sectional view showing a cutting step of the workpiece processing method shown in Figure 16. In addition, in FIGS. 16 to 18, the same portions as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and their description is omitted.

實施方式3的工件加工方法是如圖16所示，具備：保護膜覆蓋步驟ST1，第1雷射加工槽形成步驟ST2-2，第2雷射加工槽形成步驟ST3-2，清潔步驟ST4-3，以及切割步驟ST8。As shown in FIG. 16, the workpiece processing method according to the third embodiment includes a protective film covering step ST1, a first laser processing groove forming step ST2-2, a second laser processing groove forming step ST3-2, and a cleaning step ST4- 3, and a cutting step ST8.

實施方式3的工件加工方法之雷射加工槽形成步驟ST2-2、ST3-2是如圖17所示，一邊使切割道5與雷射光束照射單元34沿著切割道5相對地移動，一邊從雷射光束照射單元34對工件1照射雷射光束200。實施方式3的工件加工方法之雷射加工槽形成步驟ST2-2、ST3-2是與實施方式2相同，在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2。In the laser processing groove forming steps ST2-2 and ST3-2 of the workpiece processing method according to the third embodiment, as shown in FIG. 17, the cutting path 5 and the laser beam irradiation unit 34 are relatively moved along the cutting path 5, The workpiece 1 is irradiated with the laser beam 200 from the laser beam irradiation unit 34. In the laser processing groove forming steps ST2-2 and ST3-2 of the workpiece processing method according to the third embodiment, in the same manner as in the second embodiment, the both sides of the dicing streets 3 and 4 in the width direction are formed to have a narrower width than that of the first embodiment. Laser processing slots 14-2, 15-2.

實施方式3的工件加工方法之清潔步驟ST4-3，是在實施第2雷射加工槽形成步驟ST3-2之後，沿第1切割道3照射雷射光束200以除去加工屑301之部分303的步驟。在實施方式3中，於清潔步驟ST4-3，雖然在遍及第1雷射加工槽14-2全長的第1雷射加工槽14-2內照射雷射光束200，但在本發明中，也可以僅在第1雷射加工槽14-2內之交叉部9附近照射。當雷射光束200照射到工件1的所有第1切割道3之第1雷射加工槽14-2時，實施方式3的工件加工方法進入切割步驟ST8。In the cleaning step ST4-3 of the workpiece processing method according to the third embodiment, after the second laser processing groove forming step ST3-2 is performed, the laser beam 200 is irradiated along the first scribe line 3 to remove the portion 303 of the machining chip 301. step. In the third embodiment, in the cleaning step ST4-3, the laser beam 200 is irradiated into the first laser processing groove 14-2 over the entire length of the first laser processing groove 14-2, but in the present invention, It is possible to illuminate only in the vicinity of the intersection portion 9 in the first laser processing groove 14-2. When the laser beam 200 is irradiated onto the first laser processing grooves 14-2 of all the first dicing streets 3 of the workpiece 1, the workpiece machining method of the third embodiment proceeds to the cutting step ST8.

切割步驟ST8是使用切割裝置60將工件1分割為個個元件6的步驟。在切割步驟ST8中，切割裝置60將透過黏著膠帶13將工件1之背面8側吸引保持在卡盤台61的保持面62上，並且以夾具63夾持環狀框架12。在切割步驟ST8中，如圖18所示，切割裝置60一邊使切割刀片64及工件1沿著切割道5相對地移動，一邊使切割刀片64切入切割道5直到切入黏著膠帶13為止，以將工件1分割為個個元件6。工件加工方法在將工件1分割為個個元件6時結束。另外之後，工件1在例如清洗水被供給至正面7之後，個個元件6被從黏著膠帶13上拾取。The cutting step ST8 is a step of dividing the workpiece 1 into individual elements 6 using the cutting device 60. In the cutting step ST8, the cutting device 60 sucks and holds the back surface 8 side of the workpiece 1 on the holding surface 62 of the chuck table 61 through the adhesive tape 13, and clamps the annular frame 12 with the jig 63. In the cutting step ST8, as shown in Fig. 18, the cutting device 60 moves the cutting blade 64 and the workpiece 1 relatively along the cutting path 5 while cutting the cutting blade 64 into the cutting path 5 until the adhesive tape 13 is cut. The workpiece 1 is divided into individual elements 6. The workpiece machining method ends when the workpiece 1 is divided into individual elements 6. Further, after the workpiece 1 is supplied to the front surface 7, for example, washing water, the individual elements 6 are picked up from the adhesive tape 13.

實施方式3的工件加工方法，是在實施第1雷射加工槽形成步驟ST2-2及第2雷射加工槽形成步驟ST3-2之後，藉由實施清潔步驟ST4-3，除去加工屑301的部分303。因此，實施方式3的工件加工方法，在清潔步驟ST4-3的後續步驟之切割步驟ST8中，能夠抑制因加工屑301的部分303造成切割刀片64蛇行、崩裂的產生、裂痕的產生以及切割刀片64損壞。其結果，實施方式3的工件加工方法與實施方式1相同，能夠降低在清潔步驟ST4-3的後續步驟中產生問題的風險。In the workpiece processing method according to the third embodiment, after the first laser processing groove forming step ST2-2 and the second laser processing groove forming step ST3-2 are performed, the cleaning chip ST3 is removed by performing the cleaning step ST4-3. Section 303. Therefore, in the workpiece processing method of the third embodiment, in the cutting step ST8 of the subsequent step of the cleaning step ST4-3, it is possible to suppress the occurrence of cracking, cracking, cracking, and cutting of the cutting blade 64 due to the portion 303 of the machining chip 301. 64 damage. As a result, the workpiece processing method according to the third embodiment is the same as that of the first embodiment, and the risk of causing a problem in the subsequent step of the cleaning step ST4-3 can be reduced.

此外，實施方式3的工件加工方法在雷射加工槽形成步驟ST2-2、ST3-2中，因為在切割道3、4寬度方向的兩側部各別形成較實施方式1寬度窄的雷射加工槽14-2、15-2，所以能夠抑制Low-k膜從基板2剝離。Further, in the workpiece machining method according to the third embodiment, in the laser processing groove forming steps ST2-2 and ST3-2, the laser beam having a narrower width than that of the first embodiment is formed on both sides in the width direction of the dicing streets 3 and 4. Since the grooves 14-2 and 15-2 are processed, it is possible to suppress peeling of the Low-k film from the substrate 2.

另外，本發明非限定於上述實施方式及變形例。亦即，在未超出本發明精神的範圍內可以實施各種變形。在前述實施方式等之中，工件加工方法於保護膜覆蓋步驟ST1中，塗佈水溶性的保護膜溶液11以形成電漿蝕刻用保護膜10。然而，在本發明中，工件加工方法在由感光性聚醯亞胺（Polyimide）等所構成的鈍化（Passivation）膜層積於工件1的正面7上的情況下，也可以將鈍化膜用作電漿蝕刻用保護膜。鈍化膜是被層積在基板2的正面，從外部環境中保護元件6的電路，並物理性及化學性地保護元件6的東西，是具有電漿蝕刻耐受性的膜。在本發明中，鈍化膜可以層積在包含切割道5的工件1的整個正面7上，也可以只層積在元件6的表面上而在切割道5中露出基板2。Further, the present invention is not limited to the above embodiments and modifications. That is, various modifications can be made without departing from the spirit of the invention. In the above-described embodiment and the like, in the protective film covering step ST1, the water-soluble protective film solution 11 is applied to form the plasma etching protective film 10. However, in the present invention, in the case where the workpiece processing method is laminated on the front surface 7 of the workpiece 1 by a passivation film composed of a photosensitive polyimine or the like, a passivation film can also be used. Protective film for plasma etching. The passivation film is a film which is laminated on the front surface of the substrate 2, protects the element 6 from the external environment, and physically and chemically protects the element 6, and is a film having plasma etching resistance. In the present invention, the passivation film may be laminated on the entire front surface 7 of the workpiece 1 including the dicing streets 5, or may be laminated only on the surface of the element 6 to expose the substrate 2 in the dicing street 5.

1‧‧‧工件1‧‧‧Workpiece

3‧‧‧第1切割道3‧‧‧1st cutting lane

4‧‧‧第2切割道4‧‧‧2nd cutting

5‧‧‧切割道5‧‧‧Cut Road

9‧‧‧交叉部9‧‧‧Intersection

10‧‧‧電漿蝕刻用保護膜10‧‧‧Protective film for plasma etching

14、14-2‧‧‧第1雷射加工槽14, 14-2‧‧‧1st laser processing slot

15、15-2‧‧‧第2雷射加工槽15, 15-2‧‧‧2nd laser processing slot

101‧‧‧第1方向101‧‧‧1st direction

102‧‧‧第2方向102‧‧‧2nd direction

200‧‧‧雷射光束200‧‧‧Laser beam

303‧‧‧部分（延伸在第2方向的加工屑）Section 303‧‧‧ (Working chips extending in the 2nd direction)

ST1‧‧‧保護膜覆蓋步驟ST1‧‧‧ Protective film covering step

ST2、ST2-2‧‧‧第1雷射加工槽形成步驟ST2, ST2-2‧‧‧1st laser processing groove forming step

ST3、ST3-2‧‧‧第2雷射加工槽形成步驟ST3, ST3-2‧‧‧2nd laser processing groove forming step

ST4、ST4-3‧‧‧清潔步驟ST4, ST4-3‧‧‧ cleaning steps

ST5‧‧‧電漿蝕刻步驟ST5‧‧‧ Plasma etching step

ST6‧‧‧第1寬幅槽形成步驟（清潔步驟）ST6‧‧‧1st wide groove forming step (cleaning step)

圖1係表示實施方式1之工件加工方法的加工對象之工件之一例的立體圖。 圖2係表示實施方式1之工件加工方法的流程之流程圖。 圖3係表示圖2所示工件加工方法之保護膜覆蓋步驟的側剖面圖。 圖4係圖2所示工件加工方法之保護膜覆蓋步驟後的工件之剖面圖。 圖5係表示在圖2所示工件加工方法之第1雷射加工槽形成步驟等所用的雷射加工裝置之立體圖。 圖6係表示圖2所示工件加工方法之第1雷射加工槽形成步驟的側剖面圖。 圖7係表示圖2所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖8係表示圖2所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖9係表示圖2所示工件加工方法之清潔步驟後的工件之正面的一部分之俯視圖。 圖10係表示在圖2所示工件加工方法之電漿蝕刻步驟所用的蝕刻裝置的構成之剖面圖。 圖11係表示實施方式2之工件加工方法的流程之流程圖。 圖12係表示圖11所示工件加工方法之第1雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖13係表示圖11所示工件加工方法之第2雷射加工槽形成步驟後的工件之正面的一部分之俯視圖。 圖14係表示圖11所示工件加工方法之第1寬幅槽形成步驟後的工件之正面的一部分之俯視圖。 圖15係表示圖11所示工件加工方法之第2寬幅槽形成步驟後的工件之正面的一部分之俯視圖。 圖16係表示實施方式3之工件加工方法的流程之流程圖。 圖17係表示圖16所示工件加工方法之第1雷射加工槽形成步驟及第2雷射加工槽形成步驟的側剖面圖。 圖18係表示圖16所示工件加工方法之切割步驟的側剖面圖。Fig. 1 is a perspective view showing an example of a workpiece to be processed in the workpiece machining method according to the first embodiment. Fig. 2 is a flow chart showing the flow of the workpiece processing method of the first embodiment. Fig. 3 is a side sectional view showing a step of covering a protective film of the workpiece processing method shown in Fig. 2. Fig. 4 is a cross-sectional view showing the workpiece after the protective film covering step of the workpiece processing method shown in Fig. 2. Fig. 5 is a perspective view showing a laser processing apparatus used in the first laser processing groove forming step and the like of the workpiece processing method shown in Fig. 2; Fig. 6 is a side cross-sectional view showing a first laser processing groove forming step of the workpiece processing method shown in Fig. 2; Fig. 7 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece processing method shown in Fig. 2; Fig. 8 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece processing method shown in Fig. 2; Fig. 9 is a plan view showing a part of the front surface of the workpiece after the cleaning step of the workpiece processing method shown in Fig. 2. Fig. 10 is a cross-sectional view showing the configuration of an etching apparatus used in the plasma etching step of the workpiece processing method shown in Fig. 2. Fig. 11 is a flow chart showing the flow of the workpiece processing method of the second embodiment. Fig. 12 is a plan view showing a part of the front surface of the workpiece after the first laser processing groove forming step of the workpiece processing method shown in Fig. 11; Fig. 13 is a plan view showing a part of the front surface of the workpiece after the second laser processing groove forming step of the workpiece processing method shown in Fig. 11; Fig. 14 is a plan view showing a part of the front surface of the workpiece after the first wide groove forming step of the workpiece processing method shown in Fig. 11; Fig. 15 is a plan view showing a part of the front surface of the workpiece after the second wide groove forming step of the workpiece processing method shown in Fig. 11; Fig. 16 is a flow chart showing the flow of the workpiece processing method of the third embodiment. Fig. 17 is a side cross-sectional view showing a first laser processing groove forming step and a second laser processing groove forming step in the workpiece processing method shown in Fig. 16. Figure 18 is a side cross-sectional view showing a cutting step of the workpiece processing method shown in Figure 16.

Claims (3)

一種工件加工方法，該工件具有多條切割道，所述多條切割道由在第1方向延伸的第1切割道，及在與該第1方向交叉的第2方向上延伸的第2切割道所組成，該工件加工方法之特徵在於，具備： 第1雷射加工槽形成步驟，沿該第1切割道照射對工件具有吸收性波長的雷射光束以形成第1雷射加工槽； 第2雷射加工槽形成步驟，在實施該第1雷射加工槽形成步驟後，沿該第2切割道照射該雷射光束以形成第2雷射加工槽；以及 清潔步驟，在實施該第2雷射加工槽形成步驟後，沿該第1切割道照射該雷射光束，以除去加工屑，該加工屑在該第1雷射加工槽形成步驟中產生於該第1雷射加工槽的槽緣，且因實施該第2雷射加工槽形成步驟而在該第1切割道與該第2切割道之交叉部延伸於該第2方向上。A workpiece processing method, the workpiece having a plurality of cutting lanes, the plurality of cutting lanes being a first cutting lane extending in a first direction, and a second cutting lane extending in a second direction crossing the first direction The workpiece processing method is characterized by comprising: a first laser processing groove forming step of irradiating a laser beam having an absorptive wavelength to a workpiece along the first scribe line to form a first laser processing groove; a laser processing groove forming step of irradiating the laser beam along the second scribe line to form a second laser processing groove after performing the first laser processing groove forming step; and a cleaning step of implementing the second ray After the processing groove forming step, the laser beam is irradiated along the first cutting path to remove machining chips generated in the groove of the first laser processing groove in the first laser processing groove forming step. And performing the second laser processing groove forming step to extend in the second direction at an intersection of the first scribe line and the second scribe line. 如申請專利範圍第1項所述之工件加工方法，其中， 具備保護膜覆蓋步驟，在實施該第1雷射加工槽形成步驟之前，將電漿蝕刻用保護膜覆蓋至工件上； 藉由實施該第1雷射加工槽形成步驟、該第2雷射加工槽形成步驟以及該清潔步驟，使該第1切割道及該第2切割道露出；以及 具備電漿蝕刻步驟，在實施該清潔步驟之後，透過該電漿蝕刻用保護膜在工件上施予電漿蝕刻。The workpiece processing method according to claim 1, further comprising: a protective film covering step of covering the workpiece with a plasma etching protective film before performing the first laser processing groove forming step; The first laser processing groove forming step, the second laser processing groove forming step, and the cleaning step, exposing the first scribe line and the second scribe line; and providing a plasma etching step to perform the cleaning step Thereafter, plasma etching is applied to the workpiece through the plasma etching protective film. 如申請專利範圍第1項所述之工件加工方法，其中，在該清潔步驟中，與該第1雷射加工槽形成步驟及該第2雷射加工槽形成步驟相比，加工進給速度較快。The workpiece processing method according to claim 1, wherein in the cleaning step, the processing feed speed is higher than the first laser processing groove forming step and the second laser processing groove forming step fast.
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