TWI773688B - 複合基板,其製造方法以及電子裝置 - Google Patents
複合基板,其製造方法以及電子裝置 Download PDFInfo
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- TWI773688B TWI773688B TW106132086A TW106132086A TWI773688B TW I773688 B TWI773688 B TW I773688B TW 106132086 A TW106132086 A TW 106132086A TW 106132086 A TW106132086 A TW 106132086A TW I773688 B TWI773688 B TW I773688B
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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JP (1) | JP6681461B2 (fr) |
KR (1) | KR102257664B1 (fr) |
CN (1) | CN109690943B (fr) |
DE (1) | DE112017004718T5 (fr) |
TW (1) | TWI773688B (fr) |
WO (1) | WO2018056210A1 (fr) |
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JP6650551B1 (ja) | 2018-05-22 | 2020-02-19 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
CN110138356B (zh) * | 2019-06-28 | 2020-11-06 | 中国科学院上海微系统与信息技术研究所 | 一种高频声表面波谐振器及其制备方法 |
JP7331208B2 (ja) * | 2020-01-20 | 2023-08-22 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
JP7098666B2 (ja) * | 2020-01-20 | 2022-07-11 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140327116A1 (en) * | 2011-12-22 | 2014-11-06 | Shin-Etsu Chemical Co., Ltd. | Composite substrate |
WO2014188842A1 (fr) * | 2013-05-21 | 2014-11-27 | 日本碍子株式会社 | Procédé de fabrication de dispositif piézoélectrique, dispositif piézoélectrique et substrat autoporteur piézoélectrique |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02187177A (ja) * | 1989-01-17 | 1990-07-23 | Natl Res Inst For Metals | セラミックホーンを用いた超音波発振装置 |
JPH05124867A (ja) * | 1991-11-01 | 1993-05-21 | Sumitomo Electric Ind Ltd | 窒化ケイ素系焼結体 |
JPH08130439A (ja) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | 高速表面弾性波素子 |
JP2004241670A (ja) * | 2003-02-07 | 2004-08-26 | Nikon Corp | 組立構造体、ステージ装置および露光装置 |
JP3929983B2 (ja) * | 2004-03-03 | 2007-06-13 | 富士通メディアデバイス株式会社 | 接合基板、弾性表面波素子および弾性表面波デバイス並びにその製造方法 |
JP2007214902A (ja) * | 2006-02-09 | 2007-08-23 | Shin Etsu Chem Co Ltd | 弾性表面波素子 |
WO2008078481A1 (fr) * | 2006-12-25 | 2008-07-03 | Murata Manufacturing Co., Ltd. | Dispositif à onde limite élastique |
JP4316632B2 (ja) * | 2007-04-16 | 2009-08-19 | 富士通メディアデバイス株式会社 | 弾性表面波装置及び分波器 |
JP5117911B2 (ja) * | 2008-04-03 | 2013-01-16 | 新日鉄住金マテリアルズ株式会社 | セラミックスおよび炭素繊維強化プラスチックを含む構造体 |
US10912917B2 (en) | 2009-12-23 | 2021-02-09 | C. R. Bard, Inc. | Catheter assembly/package utilizing a hydrating/hydrogel sleeve and method of making and using the same |
KR101661361B1 (ko) * | 2010-01-14 | 2016-09-29 | 엔지케이 인슐레이터 엘티디 | 복합 기판, 및 그것을 이용한 탄성 표면파 필터와 탄성 표면파 공진기 |
CN102624352B (zh) | 2010-10-06 | 2015-12-09 | 日本碍子株式会社 | 复合基板的制造方法以及复合基板 |
JP5874738B2 (ja) * | 2011-12-01 | 2016-03-02 | 株式会社村田製作所 | 弾性表面波装置 |
EP2736169B1 (fr) * | 2012-08-17 | 2016-09-14 | NGK Insulators, Ltd. | Substrat composite, dispositif à ondes élastiques de surface, et procédé de production de substrat composite |
JP6155498B2 (ja) * | 2013-07-19 | 2017-07-05 | ヤマハ株式会社 | 圧電素子 |
JP6208646B2 (ja) * | 2014-09-30 | 2017-10-04 | 信越化学工業株式会社 | 貼り合わせ基板とその製造方法、および貼り合わせ用支持基板 |
WO2016077628A1 (fr) | 2014-11-12 | 2016-05-19 | Munchkin, Inc. | Cassette de distribution de tube plissé |
JP2016144827A (ja) * | 2015-01-29 | 2016-08-12 | 京セラ株式会社 | 溶接用エンドタブ |
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2017
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140327116A1 (en) * | 2011-12-22 | 2014-11-06 | Shin-Etsu Chemical Co., Ltd. | Composite substrate |
WO2014188842A1 (fr) * | 2013-05-21 | 2014-11-27 | 日本碍子株式会社 | Procédé de fabrication de dispositif piézoélectrique, dispositif piézoélectrique et substrat autoporteur piézoélectrique |
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US20190207585A1 (en) | 2019-07-04 |
JPWO2018056210A1 (ja) | 2018-09-20 |
KR20190039557A (ko) | 2019-04-12 |
CN109690943B (zh) | 2023-10-13 |
TW201826578A (zh) | 2018-07-16 |
US10998881B2 (en) | 2021-05-04 |
JP6681461B2 (ja) | 2020-04-15 |
WO2018056210A1 (fr) | 2018-03-29 |
KR102257664B1 (ko) | 2021-05-31 |
CN109690943A (zh) | 2019-04-26 |
DE112017004718T5 (de) | 2019-06-13 |
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