TWI771804B - Gas distribution device and plasma processing device - Google Patents

Abstract

The invention discloses a gas distribution device and a plasma processing device. The gas distribution device includes a gas baffle and a mounting substrate, the gas baffle includes a central gas inlet, an edge gas inlet, a central gas diffusion area and an edge gas diffusion area, and the area between the central gas diffusion area and the edge gas diffusion area is set There are annular gas channels and annular accommodating channels, and the annular gas channels and annular accommodating channels are staggered; the mounting substrate is provided with a hole penetrating the surface of the mounting substrate, and the hole communicates with the central gas diffusion area, the edge gas diffusion area and the annular gas channel; From the central gas inlet and/or the edge gas inlet, it flows into the corresponding gas diffusion area and diffuses into the annular gas channel and the annular receiving channel. An annular sealing ring is arranged in any annular receiving channel to limit the diffusion of the gas, so as to disperse the gas. The gas is confined to the gas diffusion regions and channels of the desired region, and further the gas is released into the pores of the corresponding region.

Description

Gas distribution device and plasma processing device

The present invention relates to the technical field of plasma etching, in particular to a gas distribution device capable of freely adjusting the gas distribution area and a plasma processing device having the gas distribution device.

During the etching process performed by the plasma processing apparatus, different etching gases need to be introduced, and these gases need to be distributed in corresponding required etching areas of the wafer to be etched.

In the prior art, in the gas distribution device installed in the plasma processing device, the gas transmission path and the area of the gas distribution area are fixed, and the gas introduced from the gas inlet will be distributed to the fixed flow channel area to form a gas distribution device. The fixed gas distribution area is then released to a fixed area in the etched area. If the wafers are processed in different processes, different gases need to be introduced, and the distribution area of the gas in the gas distribution device in different processes needs to be different. Therefore, the corresponding gas distribution device needs to be replaced to meet different process processing. The replacement process Complex and requires high replacement costs.

Therefore, there is a great need for a gas distribution device and a plasma processing device that can freely adjust the gas distribution area, so as to introduce the etching gas into the desired etching area.

In view of this, the present invention provides a gas distribution device and a plasma processing device, which effectively solve the problems existing in the prior art, so that the introduced gas can be filled into the area required by the corresponding etching process.

In order to achieve the above object, the present invention provides a gas distribution device, comprising a gas baffle and a mounting substrate fixedly connected with the gas baffle, The gas baffle includes a central gas inlet, an edge gas inlet, a central gas diffusion region communicated with the central gas inlet, and an edge gas diffusion region communicated with the edge gas inlet, and the gap between the central gas diffusion region and the edge gas diffusion region is The area is provided with a plurality of annular gas channels and a plurality of annular accommodating channels, and the annular gas channels and the annular accommodating channels are staggered; The mounting substrate is provided with a channel penetrating the surface of the mounting substrate, and the channel is communicated with the central gas diffusion area, the edge gas diffusion area and the annular gas channel; The gas flows into the corresponding gas diffusion area from the central gas inlet and/or the edge gas inlet and diffuses into the annular gas channel and the annular receiving channel around the gas diffusion area, and an annular sealing ring is arranged in any annular receiving channel to restrict the gas Therefore, the gas is confined in the gas diffusion region and channel of the desired region, and the gas is further released into the pores of the corresponding region.

Preferably, the gas baffle further comprises an intermediate gas inlet and an intermediate gas diffusion area communicated with the intermediate gas inlet, the intermediate gas inlet is located between the central gas inlet and the edge gas inlet, and the intermediate gas diffusion area is located in the middle gas inlet. Between the central gas diffusion region and the edge gas diffusion region.

Preferably, the area between the central gas diffusion area and the intermediate gas diffusion area is provided with a plurality of annular gas channels and a plurality of annular accommodation channels, and the area between the intermediate gas diffusion area and the edge gas diffusion area is provided with a plurality of annular gas channels. A plurality of annular gas passages and a plurality of annular accommodating passages are arranged alternately between the plurality of annular gas passages and the plurality of annular accommodating passages between the gas diffusion regions.

Preferably, the gas flows into the corresponding gas diffusion region from at least one of the central gas inlet, the middle gas inlet and the edge gas inlet and diffuses into the annular gas channel and the annular receiving channel around the gas diffusion region, and in any ring An annular sealing ring is arranged in the shaped accommodating channel to limit the diffusion of the gas, so as to confine the gas to the gas diffusion area and the channel in the desired area, and further release the gas into the pores of the corresponding area.

Preferably, openings are provided on the sides of the annular gas channel and the annular accommodating channel, so that gas flows between the annular gas channel and the annular accommodating channel without the annular sealing ring.

Preferably, the holes provided on the mounting substrate communicate with each gas diffusion area and each annular gas channel, but are not in communication with the annular accommodating channel.

Preferably, an annular groove is arranged on the outer side of the edge gas diffusion area, and an annular sealing ring is arranged in the annular groove to prevent the gas from flowing out to the outside of the gas distribution device.

Preferably, a gas shower head is connected below the gas distribution device, and after the gas is partitioned in the gas distribution device, the gas is sprayed into the plasma reaction zone of a plasma device by the gas shower head.

Preferably, at least 2 groups of annular gas passages and at least 3 groups of annular accommodating passages are arranged between each diffusion area.

Preferably, the diameter of the annular sealing ring disposed in the annular accommodating channel is between 30mm and 120mm.

Preferably, the gas baffle and the mounting substrate are fixedly connected by bolts.

The present invention also provides a plasma processing device, comprising: A reaction chamber enclosed by a plurality of walls; a base arranged in the reaction chamber for fixing the substrate; a gas shower head arranged in the reaction chamber for introducing gas into the reaction chamber, and a plasma reaction area is formed between the gas shower head and the base; The gas distribution device arranged above the gas shower head is used for partitioning the incoming gas and then releasing it to the gas shower head, and the gas distribution device has the features as described in the above-mentioned gas distribution device.

Compared with the prior art, the technical solution provided by the present invention has at least the following advantages: the gas distribution device provided by the present invention includes a gas baffle and a mounting substrate, and the gas baffle is provided with a plurality of gas inlets and a plurality of gas inlets communicated with the corresponding gas inlets. A plurality of gas diffusion regions, a plurality of annular gas channels and a plurality of annular accommodating channels arranged in a staggered manner are arranged between the gas diffusion regions, and the mounting substrate is provided with a channel that communicates with each gas diffusion region and the annular accommodating channel, and the gas flows from the gas The inlet flows into the corresponding gas diffusion area and diffuses into the annular gas channel and the annular receiving channel around the gas diffusion area. By setting an annular sealing ring in a certain annular receiving channel to prevent the diffusion of the gas, the filled gas can be Different gases are restricted in the corresponding area by the barrier of the annular sealing ring, and when performing different plasma etching processes and the area of the gas distribution area in the previous process needs to be changed, it is only necessary to change the setting of the annular sealing ring The position of the gas distribution area can be changed, and a variety of gases are blocked by the sealing ring, and the phenomenon of mixing will not occur.

In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the technical field without making progressive efforts shall fall within the protection scope of the present invention.

Figure 1 depicts a plasma processing apparatus for plasma processing. The plasma processing apparatus includes a reaction chamber 100 surrounded by a plurality of walls. The reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 100a and a top wall 100b made of metal material. The upper part of the reaction chamber 100 is provided with a gas shower head 110 and a base 120 located at the lower part of the reaction chamber 100 opposite to the gas shower head 110 . A plasma reaction area is formed between the gas shower head 110 and the base 120 . A gas distribution device 130 is connected above the gas shower head 110 , and after the gas is partitioned in the gas distribution device 130 , the gas is sprayed into the plasma reaction zone by the gas shower head 110 . The base 120 is used to carry the substrate w to be processed.

The reaction chamber 100 further includes an isolation ring 140 surrounding the gas distribution device 130 for confining the plasma in the walls provided by the isolation ring 140 to prevent the plasma from diffusing and corroding the walls of the reaction chamber 100 . A plasma confinement ring 150 is arranged around the base 120, and an exhaust channel is arranged on the plasma confinement ring 150. By reasonably setting the depth-to-width ratio of the exhaust channel, the reaction gas can be discharged while the plasma is confined in the plasma. In the bulk reaction area, the leakage of plasma to the non-reaction area can be avoided, causing damage to the components in the non-reaction area. An insulating ring 160 is disposed between the base 120 and the plasma confinement ring 150 to provide an electric field shield to avoid plasma leakage.

FIG. 2 depicts a schematic cross-sectional view of a first embodiment of a gas distribution apparatus 130 for gas distribution within a plasma processing apparatus. The gas distribution device 130 includes a gas baffle 170 located above and a mounting substrate 180 fixedly connected below the gas baffle 170 . The gas baffle 170 and the mounting substrate 180 are in the shape of a disk, and are fixedly connected by bolts s in the up-down direction.

Please also refer to the side view of the gas baffle 170 of the first embodiment shown in FIG. 3 . The gas baffle 170 is provided with a central gas inlet 171 located at the center, an edge gas inlet 172 located outside the central gas inlet 171 , a central gas diffusion area 173 communicated with the central gas inlet 171 , and a peripheral gas inlet 172 communicated. Edge gas diffusion region 174 . The center gas inlet 171 and the edge gas inlet 172 are located at the top of the gas baffle 170 , and the center gas diffusion area 173 and the edge gas diffusion area 174 are located at the bottom of the gas baffle 170 . The area between the central gas diffusion area 173 and the edge gas diffusion area 174 is provided with a plurality of annular gas passages 175 and a plurality of annular accommodation passages 176 , and the plurality of annular gas passages 175 and the plurality of annular accommodation passages 176 are arranged alternately. Openings 177 are formed on the sides of each annular gas channel 175 and the annular accommodating channel 176 .

The mounting substrate 180 is provided with a plurality of holes 181 penetrating the surface of the mounting substrate 180 , and the holes 181 are arranged around most areas of the mounting substrate 180 .

The gas baffle 170 and the mounting base plate 180 are fixedly connected with bolts s in the up-down direction to form a gas distribution device 130 . The holes 181 on the mounting substrate 180 communicate with the central gas diffusion area 173 , the edge gas diffusion area 174 and the annular gas channel 175 on the gas baffle 170 in the up-down direction, while the annular receiving channels 176 on the gas baffle 170 are connected to each other. It is not communicated with the holes 181 on the mounting substrate 180 but is blocked by the wall surface of the mounting substrate 180 .

4 and 5 depict schematic cross-sectional views of a second embodiment of a gas distribution device 230 for gas distribution in a plasma processing apparatus.

Compared with the first embodiment, the gas baffle 270 of the gas distribution device 230 of the second embodiment is further provided with an intermediate gas inlet 278 between the central gas inlet 271 and the edge gas inlet 272 , and at the same time in the central gas diffusion area 273 An intermediate gas diffusion region 279 is further disposed between the edge gas diffusion region 274 , and the intermediate gas diffusion region 279 communicates with the intermediate gas inlet 278 . The center gas inlet 271 , the middle gas inlet 278 and the edge gas inlet 272 are located at the top of the gas baffle 270 , and the center gas diffusion area 273 , the middle gas diffusion area 279 and the edge gas diffusion area 274 are located at the bottom of the gas baffle 270 . The area between the central gas diffusion region 273 and the intermediate gas diffusion region 279 is provided with a plurality of annular gas passages 275 and a plurality of annular accommodation passages 276 , and the plurality of annular gas passages 275 and the plurality of annular accommodation passages 276 are arranged alternately. A plurality of annular gas channels 275 and a plurality of annular accommodating channels 276 are arranged in the region between the intermediate gas diffusion region 279 and the edge gas diffusion region 274 , and the plurality of annular gas channels 275 and the plurality of annular accommodating channels 276 are arranged alternately. Openings 277 are formed on the sides of the annular gas passages 275 and the annular accommodating passages 276 in each region.

The installation method of the gas baffle 270 and the mounting substrate 280 in the second embodiment is the same as that of the first embodiment. The middle gas diffusion area 279 , the edge gas diffusion area 274 and the annular gas channel 275 communicate with each other, while the annular receiving channels 276 on the gas baffle 270 are not communicated with the holes 281 on the mounting substrate 280 but are mounted on the substrate 280 . wall barrier.

During the etching process of the plasma processing device, different etching gases need to be introduced, and these gases need to be distributed in the required etching area of the wafer to be etched. The structure of the gas distribution device, the gas transmission path and the area of the gas distribution area are fixed, and the gas introduced from the gas inlet will be distributed into the fixed flow channel area and then introduced into the fixed etching area. During the process, when different gases need to flow into the flow channel area required by the process and be introduced into the required etching area, the corresponding gas distribution device needs to be replaced, the replacement process is complicated, and high replacement costs are required.

In the gas distribution device 130 according to the first embodiment of the present application, the gas flows from the central gas inlet 171 and/or the edge gas inlet 172 to the corresponding central gas diffusion area 173 and/or the edge gas diffusion area 174, and flows to the corresponding central gas diffusion area 173 and/or the peripheral gas diffusion area 174. The annular gas channel 175 and the annular accommodating channel 176 around the gas diffusion area are diffused, and the openings 177 on the sides of each annular gas channel 175 and the annular accommodating channel 176 contribute to smoother gas flow, and at the same time, each gas will be introduced into the mounting substrate 180 in the channel 181 to be released into the corresponding plasma reaction area of the wafer. When the etching process needs to be performed, an annular sealing ring 190 can be arranged in any annular receiving channel 176 according to the etching area on the wafer required by the etching process to limit the further diffusion of the gas, so that the gas The gas diffusion area limited to the desired area and the annular gas channel 175 and the annular receiving channel 176 that are not blocked by the annular sealing ring 190, further release the gas into the holes 181 in the corresponding areas, and through these holes 181 The partitioned gas is released to the gas shower head 110 located below the gas distribution device 130 , and sprayed by the gas shower head 110 to the plasma processing area of the corresponding area.

Similarly, in the gas distribution device 230 of the second embodiment, gas flows from at least one of the central gas inlet 271 , the intermediate gas inlet 278 and the edge gas inlet 272 to the corresponding central gas diffusion area 273 and the intermediate gas diffusion area 279 and/or the edge gas diffusion area 274, and diffuse to the annular gas channel 275 and the annular receiving channel 276 around the gas diffusion area, and the openings 277 opened on the sides of each annular gas channel 275 and the annular receiving channel 276 are helpful for more The gas flows smoothly, and at the same time, each gas is introduced into the channel 281 of the mounting substrate 280 to be released into the corresponding plasma reaction area of the wafer. When the etching process needs to be performed, an annular sealing ring 290 can be arranged in any annular receiving channel 276 according to the etching area on the wafer required by the etching process to limit the further diffusion of the gas, so that the gas The gas diffusion area limited to the desired area and the annular gas channel 275 and the annular receiving channel 276 that are not blocked by the annular sealing ring 290, and the partitioned gas is released to the gas distribution device 230 below the gas distribution device 230 through these holes 281. The gas shower head 110 is sprayed to the plasma processing area of the corresponding area by the gas shower head 110 .

Preferably, at least two sets of annular gas passages 175 and at least three sets of annular accommodating passages 176 are disposed between the central diffusion region 173 and the edge diffusion region 174 of the first embodiment. At least two sets of annular gas passages 275 and at least three sets of annular accommodating passages 276 are disposed between each region of the central gas diffusion region 273 , the intermediate gas diffusion region 279 and the peripheral gas diffusion region 274 in the second embodiment. At the same time, in both embodiments, an annular sealing ring corresponding to the diameter of each annular accommodating channel is provided to block the annular accommodating channel. Specifically, the diameter of the annular sealing ring is between 30mm and 120mm. When the etching process of different regions is to be performed, it is only necessary to replace the corresponding annular sealing ring. In addition, the annular sealing ring has good sealing performance and low price, and can bring very good practical effects. During the etching process, it is often necessary to flow different etching gases in different areas, and the annular sealing ring can limit the diffusion area of the gas. The area can also better isolate different gases.

In addition, in the first embodiment and the second embodiment, an annular groove 210 is arranged on the outer side of the gas diffusion area of the gas baffle plate, and an annular sealing ring 220 is arranged in the annular groove 210 to prevent the gas from flowing into the gas distribution device. External outflow.

In the present application, openings are provided on the sides of the annular gas channel and the annular receiving channel in the first and second embodiments to facilitate smoother gas flow. Of course, in other embodiments, no openings may be provided. Alternatively, openings can be selectively opened, and at the same time, the gas can flow through the gap between the surface where the gas baffle is combined with the mounting substrate. When the annular sealing ring is sealed in a certain annular accommodating channel, the annular sealing ring can fit to each wall of the annular accommodating channel and the top wall of the mounting base plate and has better sealing performance.

In the present application, two gas diffusion regions are arranged on the gas baffle 170 in the first embodiment, and three gas diffusion regions are arranged on the gas baffle 270 in the second embodiment, and in adjacent gas diffusion regions A plurality of annular gas passages and a plurality of annular accommodation passages are arranged, and the purpose of partitioning the gas is achieved by setting an annular sealing ring in a certain annular accommodation passage. In other embodiments, it is not limited to this, and more than three A diffusion area of a gas diffusion area, and a plurality of annular gas channels and a plurality of annular accommodating channels are arranged in the adjacent diffusion areas. covered by this application.

Although the content of the present invention has been described in detail by way of the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. Various modifications and substitutions to the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

100: reaction chamber 100a: Sidewall 100b: top wall 110: Gas sprinkler head 120: Pedestal 130, 230: Gas distribution devices 140: Isolation Ring 150: Plasma Confinement Ring 160: Insulation ring 170, 270: Gas baffle 171, 271: Center gas inlet 172, 272: Edge Gas Inlet 173, 273: Central Gas Diffusion Region 174, 274: Edge Gas Diffusion Region 175, 275: annular gas channel 176, 276: Annular containment channel 177, 277: Opening 180, 280: Mounting the base plate 181, 281: Orifices 190, 220, 290: Ring seal 210: Annular groove 278: Intermediate gas inlet 279: Intermediate Gas Diffusion Region w: substrate s: bolt

In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those with ordinary knowledge in the technical field, other drawings can also be obtained based on these drawings on the premise of no progressive labor. 1 is a plasma processing device provided with a gas distribution device; 2 is a schematic cross-sectional view of the gas distribution device of the first embodiment; 3 is a side view of a gas baffle in the gas distribution device of the first embodiment; 4 is a schematic cross-sectional view of the gas distribution device of the second embodiment; and FIG. 5 is a side view of the gas baffle in the gas distribution device of the second embodiment.

130: Gas distribution device

170: Gas baffle

171: Center gas inlet

172: Edge Gas Inlet

173: Central Gas Diffusion Region

174: Edge Gas Diffusion Region

175: annular gas channel

176: Annular containment channel

180: Mounting the substrate

181: Hole

190,220: Annular seal

210: Annular groove

s: bolt

Claims (12)

A gas distribution device, comprising a gas baffle and a mounting substrate fixedly connected with the gas baffle, wherein: the gas baffle includes a central gas inlet, an edge gas inlet, and a central gas in communication with the central gas inlet Diffusion region and an edge gas diffusion region communicating with the edge gas inlet, the region between the central gas diffusion region and the edge gas diffusion region is provided with a plurality of annular gas channels and a plurality of annular accommodating channels, the annular gas channels Arranged alternately with the annular accommodating channels; the mounting substrate is provided with a plurality of holes penetrating the surface of the mounting substrate, and the holes are respectively connected with the central gas diffusion area, the edge gas diffusion area and the annular gas channels wherein, the gas flows into the corresponding gas diffusion area from the central gas inlet and/or the edge gas inlet and diffuses into the annular gas channels and the annular containing channels around the corresponding gas diffusion area, and then diffuses in the annular gas channels and the annular receiving channels around the corresponding gas diffusion area. An annular sealing ring is arranged in any one of the plurality of annular accommodating channels to limit the diffusion of the gas, so as to limit the gas to the gas diffusion area and the channels in the desired area, and further release the gas to the corresponding area in these pores. The gas distribution device of claim 1, wherein: the gas baffle further comprises an intermediate gas inlet and an intermediate gas diffusion area communicated with the intermediate gas inlet, the intermediate gas inlet is located between the central gas inlet and the edge Between the gas inlets, the middle gas diffusion area is located between the central gas diffusion area and the edge gas diffusion area; the annular gas passages and the annular receiving passages are arranged between the central gas diffusion area and the intermediate gas diffusion area the region between the gas diffusion region or the region between the intermediate gas diffusion region and the edge gas diffusion region. The gas distribution device of claim 2, wherein: each of the gas diffusion regions The annular gas passages and the annular accommodating passages are arranged in a staggered manner. The gas distribution device of claim 3, wherein: gas flows from at least one of the central gas inlet, the intermediate gas inlet, and the edge gas inlet to the corresponding gas diffusion region and toward the corresponding gas diffusion region The surrounding annular gas passages and the annular containing passages are diffused, and the annular sealing ring is arranged in any one of the annular containing passages to limit the diffusion of the gas, thereby restricting the gas to the gas diffusion in the desired area the area and the channels, and further release the gas into the channels of the corresponding area. The gas distribution device according to any one of claims 1 to 4, wherein: the annular gas passages and the side surfaces of the annular accommodating passages are provided with openings, so as to allow gas to pass through the annular gas passages and those not provided with the annular gas passages. There is communication between the annular receiving channels of the annular sealing ring. The gas distribution device according to any one of claims 1 to 4, wherein: the holes provided on the mounting substrate are respectively communicated with the gas diffusion regions and the annular gas channels, and communicate with the gas diffusion regions and the annular gas channels respectively. The annular containment channel is not communicated. The gas distribution device according to any one of claims 1 to 4, wherein: an annular groove is arranged on the outer side of the edge gas diffusion area, and an annular sealing ring is arranged in the annular groove to prevent the gas from flowing to the outside of the gas distribution device outflow. The gas distribution device according to any one of claims 1 to 4, wherein: a gas shower head is connected below the gas distribution device, and after the gas is partitioned in the gas distribution device, the gas is sprayed by the gas shower head to a The plasma reaction zone of the plasma device. The gas distribution device according to any one of claims 1 to 4, wherein: at least 2 groups of the annular gas passages and at least 3 groups of the annular accommodating passages are arranged between the gas diffusion regions. The gas distribution device according to any one of claims 1 to 4, wherein: the diameter of the annular sealing ring disposed in the annular accommodating channel is between 30 mm and 120 mm. The gas distribution device according to any one of claims 1 to 4, wherein: the gas baffle is fixedly connected with the mounting base plate by bolts. A plasma processing device, comprising: a reaction chamber surrounded by a plurality of walls; a base arranged in the reaction chamber for fixing a substrate; a gas shower head arranged in the reaction chamber, For introducing gas into the reaction chamber, a plasma reaction area is formed between the gas shower head and the pedestal; a gas distribution device arranged above the gas shower head is used for the incoming gas. Zoned and released to the gas shower head, the gas distribution device having the features of any one of claims 1 to 4.

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