JP2022543211A - Semiconductor processing chamber and method for cleaning same - Google Patents

Abstract

A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and substrate support may at least partially define a processing space. The pumping liner may define an interior space in fluid communication with the process space via a plurality of apertures in the pumping liner circumferentially disposed about the process space. The processing chamber has a flow control mechanism operable to direct fluid flow from the interior space of the pumping liner into the processing space through a subset of the plurality of apertures in the pumping liner during fluid distribution from the gas distribution member to the processing space. can further include [Selection drawing] Fig. 6B

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of U.S. Provisional Patent Application No. 62/879,720, filed July 29, 2019, the entire contents of which for all purposes is incorporated herein by reference as

[0002] The present technology relates to semiconductor processing and equipment. More specifically, the technology relates to semiconductor processing chambers and methods for cleaning the same.

[0003] Integrated circuits are enabled by processes that form intricately patterned layers of materials on substrate surfaces. As device sizes continue to shrink in next-generation devices, uniformity of processing conditions continues to increase in importance, and chamber design and system set-up can play an important role in the quality of manufactured devices. . Accordingly, systems and methods are needed that can be used to manufacture high quality devices and structures.

[0004] According to one aspect, a processing chamber can include a gas distribution member and a substrate support positioned below the gas distribution member. The gas distribution member and substrate support may at least partially define a processing space. A gas distribution member may provide fluid access into the processing space. The processing chamber may further include a pumping liner positioned radially outward from the substrate support. The pumping liner may define a plurality of apertures circumferentially arranged around the processing space and an interior space that may be in fluid communication with the processing space via the plurality of apertures. The pumping liner may further define a gas inlet positioned radially outwardly from the plurality of apertures. A gas inlet may provide fluid access into the interior space of the pumping liner. The processing chamber may further include a flow control mechanism. The flow control mechanism directs fluid flow through the gas inlet into the interior space and then through a subset of the plurality of apertures in the pumping liner into the processing space during fluid distribution from the gas distribution member to the processing space. may be operable as

[0005] In some implementations, the flow control mechanism may include a first choke plate and a second choke plate disposed within the pumping liner. The first choke plate and the second choke plate may divide the interior space of the pumping liner into a first space and a second space. The first space may be in fluid communication with the processing space via halves of the plurality of apertures. A second space may be in fluid communication with the processing chamber via the other half of the plurality of apertures. The flow control mechanism may be operable to direct fluid flow from the first space through the process space into the second space.

[0006] In some embodiments, the flow control mechanism may include a valve positioned downstream of the gas outlet and upstream of the exhaust. The valve may be operable to close to prevent fluid flow from the interior space of the process chamber or pumping liner through the gas outlet to the exhaust.

[0007] In some embodiments, the gas outlet may be a first gas outlet. The valve can be the first valve. The flow control mechanism may further include a second gas outlet and a second valve positioned downstream of the second gas outlet and upstream of the exhaust port. The gas inlet may be the first gas inlet. The pumping liner may further define a second gas inlet. A second valve directs fluid flow through a second gas inlet into the interior space and then through another subset of the plurality of apertures during fluid distribution from the gas distribution member to the processing space. It may be operable to close for inward pointing.

[0008] In some embodiments, the flow control mechanism controls the pressure within a first duct coupling the first gas outlet to the exhaust and the pressure within a second duct coupling the second gas outlet to the exhaust. may be operable to create a pressure differential between

[0009] In some implementations, the pumping liner may include a first internal baffle and a second internal baffle that are diametrically opposed to each other. In some implementations, a first baffle can be positioned between the gas inlet and the plurality of apertures.

[0010] In some implementations, the pumping liner may include a first portion defining a first laterally extending spatial portion of the interior space of the pumping liner. A gas inlet may be located on the top surface of the first portion. The pumping liner may further include a second portion defining a second laterally extending portion of the interior space of the pumping liner. The first laterally extending spatial portion and the second laterally extending spatial portion may be diametrically opposed to each other. The pumping liner may further include a third portion defining a first toroidally shaped spatial portion of the interior space of the pumping liner. The first toroidally shaped spatial portion may be disposed between the first laterally extending spatial portion and the second laterally extending spatial portion. The pumping liner may further include a fourth portion defining a second toroidally shaped spatial portion of the interior space of the pumping liner. The first toroidally shaped space portion and the second toroidally shaped space portion may be diametrically opposed to each other.

[0011] In some embodiments, the gas inlet may be a first gas inlet. The pumping liner may further define a second gas inlet located on the top surface of the second portion. The flow control mechanism directs fluid from the gas distribution member into the process space through a second gas inlet into the interior space of the pumping liner and then through another subset of the plurality of apertures in the pumping liner. may be further operable to direct the fluid flow into the processing space by

[0012] In some implementations, the processing chamber may further include an annular gap around the substrate support to provide fluid access from a lower portion of the processing chamber to the processing space and the interior space of the pumping liner. In some implementations, each aperture of the plurality of apertures can be positioned an equal distance from two adjacent apertures of the plurality of apertures.

[0013] In accordance with another aspect, a method for cleaning a processing chamber includes directing a first gas through a gas distribution member of the processing chamber, at least partially by a gas distribution member of the processing chamber and a substrate support. It can include flowing into a defined processing space. The method may further include flowing the second gas through a gas inlet of the pumping liner of the processing chamber and into the interior space of the pumping liner. A pumping liner may be positioned radially outward from the substrate support. The interior space may be in fluid communication with the process space via a plurality of apertures in the pumping liner circumferentially arranged around the process space. The method maintains a flow of the first gas within the process space while pumping a portion of the second gas from the interior space of the pumping liner through the apertures of the first subset of the plurality of apertures into the process space. It can further include flushing. The method may further include flowing a portion of the second gas from the process space through the apertures of the second subset of the plurality of apertures and into the interior space of the pumping liner.

[0014] In some implementations, the interior space of the pumping liner may include a first space and a second space separated by a pair of choke plates. Flowing the second gas through the gas inlet of the pumping liner and into the interior space of the pumping liner may include flowing the second gas through the gas inlet of the pumping liner and into the first space. Flowing a portion of the second gas from the interior space of the pumping liner into the processing space may include flowing a portion of the second gas from the first space into the processing space. A portion of the second gas may be distributed throughout the processing space. Flowing a portion of the second gas from the process space into the interior space of the pumping liner may include flowing a portion of the second gas from the process space into the second space.

[0015] In some implementations, the first gas may be distributed throughout the processing space at a substantially uniform concentration. In some implementations, the first gas may be flowed at a first flow rate. A second gas may be flowed at a second flow rate that is greater than the first flow rate.

[0016] In some embodiments, the gas inlet may be the first gas inlet, and the method discontinues flowing the second gas through the first gas inlet of the pumping liner and into the interior space of the pumping liner. may further include: The method may further include flowing a third gas through a second gas inlet of the pumping liner and into the interior space of the pumping liner. The method may further include flowing a portion of the third gas from the interior space of the pumping liner through the apertures of the second subset of the plurality of apertures and into the processing space. The method may further include flowing a portion of the third gas from the process space through the apertures of the first subset of the plurality of apertures and into the interior space of the pumping liner.

[0017] In some embodiments, the method may further include flowing a third gas in an upward direction toward the processing space through an annular gap surrounding the substrate support.

[0018] According to another aspect, a deposition method includes directing a first gas through a gas distribution member of a processing chamber, at least partially through a substrate support and a gas distribution member of a processing chamber supporting a semiconductor substrate thereon. into a processing space defined by .
The deposition method may further include flowing a second gas through a gas inlet of the pumping liner of the processing chamber and into the interior space of the pumping liner. A pumping liner may be positioned radially outward from the substrate support. The interior space of the pumping liner may be in fluid communication with the process space via a plurality of apertures in the pumping liner circumferentially arranged around the process space. A first gas may be flowed at a first flow rate. The second gas may be substantially prevented from flowing into the process space while the first gas is flowed from the process space through the plurality of apertures and into the interior space of the pumping liner. To obtain, it can be flowed at a second flow rate that is less than the first flow rate. The pressure difference between two peripheral locations within the processing space can be less than 0.1 Torr.

[0019] In some embodiments, the gas inlet may be a first gas inlet, and the deposition method includes flowing a third gas through a second gas inlet of the pumping liner and into the interior space of the pumping liner. It can contain more. The first gas inlet and the second gas inlet may be diametrically opposed to each other. The third gas may be flowed at a third flow rate less than the first flow rate such that flow of the third gas into the processing space may be substantially prevented. Collectively, the first gas flow, the second gas flow, and the third gas flow may produce an axially symmetrical pressure profile within the processing space about the central axis of the processing space.

[0020] In some embodiments, the deposition method may further include flowing a third gas in an upward direction toward the processing space through an annular gap surrounding the substrate support.

[0021] The techniques of the present invention may provide numerous advantages over conventional systems and techniques. For example, the techniques of the present invention can clean processing chambers significantly faster than conventional in-situ cleaning methods, thus improving manufacturing throughput. The techniques of the present invention can also substantially uniformly clean the processing chamber. These and other embodiments, along with their many advantages and features, can be described in greater detail in the following description and accompanying drawings.

[0022] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings.

[0023] FIG. 2 illustrates a schematic cross-sectional view of an exemplary processing chamber, in accordance with implementations of the present technique. [0024] Figure 2 schematically illustrates selected chamber components of the processing chamber of Figure 1; [0025] FIG. 2 schematically depicts a right perspective view of one or more flow spaces defined by selected chamber components of the processing chamber of FIG. [0026] FIG. 6 illustrates exemplary steps in a method for cleaning chamber components of a processing chamber, in accordance with embodiments of the present technique. [0027] FIG. 5 schematically depicts a flow space of a processing chamber during which one or more steps of the method of FIG. 4 may be performed. [0028] FIG. 4 schematically illustrates left perspective and partial plan views, respectively, of a flow space of a processing chamber incorporating a flow control mechanism according to an embodiment of the present technique; [0029] Fig. 4 schematically illustrates a pressure profile within the processing space of a processing chamber according to embodiments of the present technique; [0030] Fig. 4 schematically illustrates a flow space of a processing chamber according to embodiments of the present technique; [0031] Fig. 6 illustrates exemplary steps of a method for cleaning chamber components of a processing chamber, in accordance with an embodiment of the present technique; [0032] FIG. 9 schematically depicts a flow space of a processing chamber during which one or more steps of the method of FIG. 9 may be performed.

[0033] Some drawings are included as schematic representations. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless specified as such. Additionally, as schematic illustrations, the drawings are provided to aid understanding, may not include all aspects or information as compared to a realistic depiction, and may include material highlighted for purposes of illustration. be.

[0034] In the accompanying drawings, similar components and/or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to their reference numerals with letters distinguishing between similar components. Where only the first reference number is used herein, the description is applicable to any of the similar components having the same first reference number regardless of letter.

[0035] During the manufacture of semiconductor devices, wafers may be delivered into the processing space of a semiconductor processing chamber for performing one or more deposition processes, such as one or more chemical vapor deposition processes. During deposition, materials deposited on the wafer, eg, the deposition gas or gases, may also be deposited on the surfaces of various chamber components exposed to the deposition gas. Thus, the processing chamber can be cleaned from time to time. Conventional chamber designs may utilize in-situ cleaning methods. In that manner, cleaning gases can be delivered into the processing chamber in a manner similar to how deposition gases can be delivered into the processing space. Thus, the in-situ cleaning gas can clean various chamber components that define the processing space and chamber components upstream of the processing space. However, such in-situ cleaning may not adequately clean the various processing chambers downstream of the processing space, or it may take a significant amount of time for the downstream components to be adequately cleaned; This can reduce manufacturing throughput.

[0036] The technique of the present invention overcomes these problems by utilizing an ex-situ cleaning gas that can be delivered through the bypass gas inlet of the pumping liner of the processing chamber. The ex-situ cleaning gas may be delivered simultaneously with the in-situ cleaning gas. The techniques of the present invention further utilize one or more flow control mechanisms to regulate the flow of the ex-situ cleaning gas so that the ex-situ cleaning gas effectively flows through the process space and various chamber components downstream of the process space. can be washed. By performing ex-situ cleaning instead of or in addition to in-situ cleaning, the entire processing chamber can be efficiently cleaned and manufacturing throughput can be improved.

[0037] Although the remainder of the disclosure routinely identifies various fluid streams for cleaning a processing chamber utilizing the disclosed techniques, this technique should be considered limited to cleaning processes only. is not. The technology can be utilized for other processes, including but not limited to deposition, etching, etc., where regulated and/or uniform fluid flow may be beneficial. Additionally, although an exemplary semiconductor processing chamber is described to aid in understanding the present technique, the technique is limited to cleaning only parts of the semiconductor processing chamber or to the exemplary chamber described. should not be regarded as a thing. It should be appreciated that the techniques of the present invention can be utilized with any type of processing chamber.

[0038] FIG. 1 shows a schematic cross-sectional view of an exemplary processing chamber 100, in accordance with embodiments of the present technique. The processing chamber 100 may include a gas distribution member or showerhead 102 and a substrate support 104 positioned below the gas distribution member 102 . Gas distribution member 102 and substrate support 104 may at least partially define processing space 106 . Gas distribution member 102 may include a number of apertures configured to provide fluid access into processing space 106 . A top component of substrate support 104 may be or include a heater that may be configured to support and heat a substrate or wafer that may be placed on the top surface of substrate support 104 during processing. Processing chamber 100 may further include a pumping liner 110 positioned radially outward from substrate support 104 . Pumping liner 110 may define a number of apertures 112 circumferentially arranged around process space 106 . Pumping liner 110 may further define an interior space 114 that may be in fluid communication with process space 106 via apertures 112 .

[0039] In some implementations, the substrate support 104 may be housed inside the bottom bowl 120 . A gap 122 , which may be annular, is formed between the substrate support 104 and the bottom bowl 120 to allow the substrate support 104 to move up and down within the bottom bowl 120 . Process gases, such as deposition gases, that may be delivered into the processing space 106 from the gas distribution member 102 are restricted or restricted from flowing downward from below the top surface of the substrate support 104 and into the lower portion of the processing chamber 100 through the gap 122 . To prevent, a purge gas, which may include inert gases such as argon, nitrogen, etc., may be flowed into gap 122 in an upward direction toward processing space 106 .

[0040] In some embodiments, purge gas may be delivered into purge space 126 through purge inlet 128 at the bottom of processing chamber 100 . A purge baffle 130 may be positioned adjacent to the purge inlet 128 to deflect the flow of purge gas to facilitate distribution of the purge gas throughout the purge space 126 . In some implementations, processing chamber 100 may include a single purge inlet 128 and a single purge baffle 130 . In some implementations, the processing chamber 100 may include multiple purge inlets 128 and a corresponding number of purge baffles 130 . Purge gas may then enter gap 122 through a number of purge equalizer holes 124 defined in bottom bowl 120 and flow upward into processing space 106 . The purge gas and process gas can then be combined at the perimeter of process space 106 and removed by pumping liner 110 through apertures 112 . In some implementations, purge equalizer holes 124 may have a common size. In some implementations, the purge equalizer holes 124 can have various sizes. For example, depending on the position of purge equalizer holes 124 relative to purge inlets 128, purge equalizer holes 124 closer to purge inlets 128 may have a smaller diameter than purge equalizer holes 124 farther from purge inlets 128. . By distributing the purge gas throughout the purge space 126 and channeling the purge gas through appropriately sized purge equalizer holes 124, an azimuthally uniform purge gas flow can be achieved. This can further promote a uniform deposition profile on the wafer.

[0041] Figure 2 schematically illustrates a perspective cross-sectional view of selected component portions of the processing chamber 100 to better illustrate the configuration of selected components. As shown, the apertures 112 of the pumping liner 110 may be circumferentially disposed about the inner circumference of the pumping liner 110 and may be spaced from each other by equal distances. The purge gas may be flowed upward through gap 122 and mixed with the process gas near the edge or perimeter of substrate support 104 and pumped from process space 106 (not shown in FIG. 2) through apertures 112 into the pumping liner. It is flowed into the interior space 114 of 110 .

[0042] FIG. 3 schematically illustrates a right perspective view of one or more flow spaces defined by selected chamber components of the processing chamber 100 of FIG. It should be noted that the flow spaces shown in FIG. 3 and other subsequent flow space figures can only represent the internal spaces or internal shapes of the various chamber components that define the flow space or flow spaces. Thus, each chamber component described herein may have the same internal space or shape, but the external shape or configuration may vary depending on how the chamber component may be integrated into the processing chamber 100 and/or or may vary from implementation to implementation, depending on whether it can be combined with other chamber components and various other considerations. Further, for purposes of discussion, specific chamber components may be described by reference to flow space diagrams, even though the actual chamber components are not shown in the flow space diagrams.

[0043] With continued reference to FIG. 110 may be fluidly connected to processing space 106 via aperture 112 . The flow space may further include one or more foreline spaces 140 in fluid communication with and downstream of the interior space 114 of the pumping liner 110 . In some implementations, the first foreline space 140a may connect with the first laterally extending space portion 116a of the interior space 114 of the pumping liner 110, and the second foreline space 140b may be , may be connected to a second laterally extending space portion 116 b of the interior space 114 of the pumping liner 110 . The flow space may further include an exhaust space 142 in fluid communication with and downstream of the first and second foreline spaces 140a, 140b. Each of the foreline spaces 140 a , 140 b may be defined by a foreline connected to the gas outlet of the pumping liner 110 . Exhaust space 142 may be defined by an exhaust duct that may direct fluid flow toward the exhaust of processing chamber 100 .

[0044] The interior space 114 of the pumping liner 110 may include a first laterally extending space portion 116a and a second laterally extending space portion 116b. The interior space 114 of the pumping liner 110 may further include two toroidally shaped space portions 118a, 118b, or a first toroidally shaped space portion 118a and a second toroidally shaped space portion 118b. Each of the two toroidally shaped void portions 118a, 118b may be positioned between two laterally extending void portions 116a, 116b. The two laterally extending space portions 116a, 116b may be diametrically opposed to each other. Also, the toroidally shaped void portions 118a, 118b may be diametrically opposed to each other.

[0045] In some embodiments, the laterally extending void portions 116a, 116b may be defined by two liner portions of the laterally extending pumping liner 110, and the toroidally shaped void portions 118a, 118b may be toroidal. It may be defined by two liner portions of the pumping liner 110, each of which may have a shape. However, as already mentioned above, the individual liner portions defining the toroidally-shaped or laterally-extending void portions 116a, 116b, 118a, 118b may, in some embodiments, have corresponding or similar external shapes. or may have no form.

[0046] As shown in FIG. 3, the interior space 114 of the pumping liner 110 is defined by an axis of symmetry passing through the respective centers of two toroidally shaped space portions 118a, 118b, two laterally extending space portions 116a, and another axis of symmetry passing through the center of each of 116b. Corresponding liner portions may allow the pumping liner 110 to be supported by other chamber components and/or for upstream and/or downstream fluid communication with other flow spaces of the processing chamber 100 . Or if the laterally extending void portions 116a, 116b are larger than the toroidally shaped void portions 118a, 118b, as they may be sized and shaped to allow multiple gas inlets and gas outlets to be defined. There is

[0047] To promote a uniform fluid flow profile within the process space 106 and gas inlets in the liner portions defining the non-axisymmetrically shaped interior space 114 of the pumping liner 110 or laterally extending space portions 116a, 116b and to minimize any impact that the outlets may have on the fluid flow profile within the process space 106, in some embodiments the pumping liner 110 defines laterally extending space portions 116a, 116b. and a pair of curved baffles disposed within the liner portion. The two baffles are shown as two gaps 117a, 117b in FIG. 3 because there may be no fluid flow through the baffles.

[0048] During deposition, a process gas, such as a single gas or a mixture of gases, may be flowed from the gas distribution member 102 into the process space 106 . Excess process gas is then channeled through apertures 112 in pumping liner 110 into interior space 114 of pumping liner 110 and then toward the exhaust of processing chamber 100 through foreline spaces 140a, 140b and various other gasses. It can flow downstream through the downstream flow space. Deposition can occur on the surfaces of various chamber components exposed to the process gas flow.

[0049] Upon completion of one or more deposition processes, the processing chamber 100 is cleaned by flowing cleaning gases into the various flow spaces to remove any material deposited on the various chamber component surfaces. obtain. The cleaning gas may contain a single gas or a mixture of gases. In some implementations, the cleaning gas may include plasma effluents that may be generated within a remote plasma source or unit coupled to the processing chamber 100 and then flowed into the processing chamber 100 . In some implementations, plasma emissions may be generated locally within processing chamber 100 , such as a capacitively coupled plasma generated within processing chamber 100 . During cleaning of the processing chamber 100, purge gas is continuously flowed into the processing chamber 100 from the bottom of the processing chamber 100 through the annular gap 122 described above with reference to FIG. Flowing down the body 104 may be restricted or prevented.

[0050] In some embodiments, the cleaning gas may be flowed into the processing chamber 100 in a manner similar to the way processing gases may be flowed into the processing chamber 100 during a deposition process. Specifically, the cleaning gas may be flowed through the gas distribution member 102 into the processing space 106 , which is then into the interior space 114 of the pumping liner 110 through various downstream flow spaces towards the exhaust of the processing chamber 100 . can be washed away. Thus, the same components and/or surfaces exposed to the process gas may also be exposed to the cleaning gas and thus cleaned by the cleaning gas. Cleaning the processing chamber 100 by flowing a cleaning gas through the gas distribution member 102 and into the processing space 106 as described above may also be referred to as in-situ cleaning. The in-situ cleaning gas can effectively clean various chamber components upstream of the processing space 106 . However, the time associated with an in-situ cleaning cycle to adequately clean chamber components downstream of processing space 106 can be long and can impact manufacturing throughput.

[0051] In some embodiments, ex-situ cleaning may be utilized to shorten the cleaning time or cleaning cycle. As shown in FIG. 3, in some implementations the flow space may further include a bypass space 144 in fluid communication with the interior space 114 of the pumping liner 110 . The bypass space 144 may be defined by a bypass duct connected to the bypass gas inlet of the pumping liner 110, or simply the gas inlet. A gas inlet may be located on the top surface of the liner portion that defines one of the laterally extending space portions 116a, 116b. The bypass space 144 and the gas inlet or bypass inlet of the pumping liner 110 allow cleaning gas to bypass the gas distribution member 102 and into the interior space 114 of the pumping liner 110 or various other flow spaces (described in more detail below). can be delivered to allow the processing chamber 100 to be cleaned. The cleaning gas delivered through the bypass space 144 may contain a single gas or a mixture of gases and may contain plasma emissions. Plasma emissions may be generated using a remote plasma source or remote plasma unit and then provided into the processing chamber 100 through the bypass space 144 and the gas inlet of the pumping liner 110 to clean the processing chamber 100 . Cleaning the processing chamber 100 by flowing cleaning gas through the bypass gas inlet of the pumping liner 110 and into the processing chamber 100 is sometimes referred to as ex-situ cleaning.

[0052] FIG. 4 illustrates exemplary steps of a method 400 that utilizes ex-situ cleaning to clean chamber components downstream of the processing space 106. As shown in FIG. 5A and 5B schematically illustrate method 400. FIG. Specifically, like FIG. 3, FIGS. 5A and 5B schematically illustrate flow spaces defined by various chamber components. Figure 5A schematically shows a front view of the flow space shown in Figure 3 while one or more steps of the downstream cleaning method 400 may be performed. FIG. 5B schematically shows the same front view as FIG. 5A while one or more other steps of the downstream cleaning method 400 may be performed. A portion of the purge gas flow space or annular gap 122 shown in FIG. 1 is also shown in FIGS. 5A and 5B. Various steps of method 400 may be performed in any order and may be removed or modified.

[0053] The method 400 flows a first or in-situ cleaning gas 150 into the processing space 106 through the gas distribution member 102 at step 405 and a second gas 152 upwardly into the processing space 106 at step 410. flowing through the gap 122 surrounding the substrate support 104 in a direction, and at step 415 flowing a third or ex-situ cleaning gas 154 from the bypass space 144 into the interior space 114 of the pumping liner 110 through the bypass gas inlet of the pumping liner 110; can be started by

[0054] The first gas stream 150 may be or include a cleaning gas stream or, more specifically, an in-situ cleaning gas stream for performing in-situ cleaning of various chamber components. The first gas stream 150 may continue to be delivered into the processing space 106 through the gas distribution member 102 . Thus, ex-situ cleaning and in-situ cleaning can be performed simultaneously in method 400 . In some embodiments, even if no in-situ cleaning is performed, the first gas stream 150 does not pass any third gas stream 154 delivered through the bypass space 144 into the chamber space upstream of the gas distribution member 102 . It can still be maintained by flowing an inert gas through the gas distribution member 102 into the processing space 106 so as to prevent entry.

[0055] A second gas stream 152, which may be or include a purge gas stream and may be similar to or the same as the purge gas stream delivered during deposition, also includes the first gas stream 150 and the second gas stream. It can be maintained to prevent any of the three gas streams 154 from entering the lower portion of the processing chamber 100 . The third gas stream 154 may be or include a cleaning gas stream or more specifically an ex-situ cleaning gas stream for performing ex-situ cleaning of various chamber components. The third gas stream 154 may continue to be delivered from the bypass space 144 into the interior space 114 of the pumping liner 110 via the bypass gas inlet of the pumping liner 110 .

[0056] With reference to FIG. It may simply pass through laterally extending space portion 116 a of space 114 and enter first foreline space 140 a below first laterally extending space portion 116 of interior space 114 of pumping liner 110 . The third gas stream 154 may then enter the exhaust space 142 and flow toward the exhaust of the processing chamber 100 . Thus, third gas stream 154 may clean various ducts defining first foreline space 140a and exhaust space 142, as well as other downstream chamber components. However, because the third gas stream 154 may substantially bypass the entire interior space 114 of the pumping liner 110 and the second foreline space 140b, the pumping liner 110 and the duct defining the second foreline space 140b may and may not be washed.

[0057] To clean the pumping liner 110, in some embodiments, the processing chamber 100 includes a flow control mechanism, such as a valve 160, positioned along the foreline act to direct the third gas flow 154 can regulate the flow of Valve 160 may be configured to open and close to allow or prevent third gas flow 154 through first foreline space 140a. This in turn may force the third gas stream 154 to flow through the interior space 114 of the pumping liner 110 and the second foreline space 140b. Thus, at step 420, valve 160 may be closed. As shown in FIG. 5B, the third gas flow 154 into the first foreline space 140a may then be prevented and the third gas flow 154 into the interior space 114 of the pumping liner 110. may be forced to enter and flow through the second foreline space 140b towards the exhaust, through the pumping liner 110, the foreline duct defining the second foreline space 140b, and other downstream chamber components. wash.

[0058] In some embodiments, other devices or mechanisms are implemented instead of or in addition to valve 160 to direct third gas flow 154 toward interior space 114 and second foreline space 140b. You can turn to For example, a pressure differential between the two foreline spaces 140a, 140b can be created to direct the third gas flow 154 through the interior space 114 of the pumping liner 110 to the second foreline space 140b. Specifically, the mechanism increases the pressure inside the first foreline space 140a such that the pressure inside the first foreline space 140a can be greater than the pressure inside the second foreline space 140b. can be implemented for For example, another gas flow may be created along the duct defining the first foreline space 140a, directing the gas flow into the second foreline space 140b, thereby increasing the pressure therein. The pressure differential causes the third gas flow 154 to flow through the interior space 114 of the pumping liner 110 and the second foreline space 140b to force the pumping liner 110, the ducts defining the second foreline space 140b, and various others. can be forced to clean any downstream chamber components. In some embodiments, at least about 0.5 torr, at least about 1 torr, at least about 1.5 torr, at least about 2 torr, at least about 2.5 torr, at least about 3 torr, at least about 3.5 torr, at least about 4 torr, or more of pressure differential can be created and/or maintained.

[0059] By performing the steps of method 400, various chamber components downstream of process space 106, such as pumping liner 110, downstream ducts, etc., may be cleaned by ex-situ cleaning gas stream 154. FIG. During ex-situ cleaning, a portion of the third gas stream 154 is removed from the interior space 114 of the pumping liner 110 depending on the mechanism implemented to direct the flow of the third gas 154 into the interior space 114 of the pumping liner 110 . can enter into the processing space 106 through the opening 112 of the . Accordingly, portions of the chamber components defining processing space 106 may also be cleaned by third gas stream 154 . However, the concentration of the third gas stream 154 inside the process space 106 may be low, and the third gas stream 154 may not be distributed throughout the process space 106 .

[0060] For example, when the valve 160 may be closed, the flow of the first gas stream 150 and the second gas stream 152 from the process space 106 to the interior space 114 of the pumping liner 110 causes a very small amount of A third gas 154 may flow into the process space 106 through a small number of apertures 112 in the pumping liner 110 . Further, the third gas stream 154 may only reach peripheral regions of the processing space 106 near the bypass space 144, and may reach central regions of the processing space 106 or peripheral regions of the processing volume 106 further away from the bypass space 144. cannot reach.

[0061] When a pressure difference between the first foreline space 140a and the second foreline space 140b can be created by increasing the pressure inside the first foreline space 140a, the third gas 154 can be flowed into the process space 106 through a plurality of apertures 112 in the pumping liner 110 and distributed within the process space 106 at higher concentrations. However, the distribution of the third gas 154 within the processing space 106 may not be uniform. For example, the concentration of the third gas 154 in regions of the processing space 106 near baffles of the pumping liner 110 may be lower than other regions of the processing space 106 . Thus, the various chamber parts that define the processing space 106 may not be uniformly cleaned by the ex-situ cleaning gas 154, requiring a very long time to reliably remove all material deposited on the various chamber parts. Washing times may be required, which can reduce manufacturing throughput.

[0062] FIG. 6A schematically illustrates a left perspective view of the flow space of the processing chamber 100 incorporating a flow control mechanism that can increase the third gas flow 154 into the processing space 106. FIG. FIG. 6B shows a partial plan view of the flow space of processing chamber 100 incorporating a flow control mechanism. As shown, the flow control mechanism may include a pair of choke plates 170a, 170b or a first choke plate 170a and a second choke plate 170b. Each of the choke plates 170 a , 170 b may be centrally located in one of the toroidal shaped space portions 118 a , 118 b of the interior space 114 of the pumping liner 110 . Thus, the interior space 114 can be divided into two smaller spaces or two sub-spaces, eg, a first substrate space 115a and a second sub-space 115b. The first subspace 115a may include a first laterally extending space portion 116 and a portion, eg, half, of each of the first and second toroidally shaped space portions 118a, 118b. The second sub-space 115b may include a second laterally extending space portion 116b and a remaining portion, such as a remaining half, of each of the first and second toroidal-shaped space portions 118a, 118b. Choke plates 170 a , 170 b may be oriented perpendicular to the baffles of pumping liner 110 . Specifically, the baffles may extend circumferentially, as shown by the extension of the flow gaps 117a, 177b created by the baffles in FIGS. 6A and 6B, whereas the choke plates 170a, 170b Since it can extend radially, it can be perpendicular to the baffle.

[0063] The choke plates 170a, 170b may directly block or prevent fluid flow from the first sub-space 115a to the second sub-space 115b or vice versa. Fluid access from the first sub-space 115 a to the second sub-space 115 b or vice versa may be established through the apertures 112 in the pumping liner 110 and the processing space 106 . Specifically, half of the apertures 112 may provide fluid access between the first sub-space 115a and the processing space 106, and the other half of the apertures 112 may provide fluid access between the second sub-space 115b and the processing space. Fluid access to and from space 106 may be provided. By preventing direct fluid flow from the first sub-space 115a to the second sub-space 115b, or vice versa, the ex-situ cleaning gas 154 is kept within the first sub-space 115a, as shown in FIG. 6B. After entering the processing space 106, it may be forced from the processing space 106 into the second sub-space 115b.

[0064] Thus, the various steps of method 400, namely, flowing first gas stream 150, second gas stream 152, and third gas stream 154, and closing valve 160 are performed. third gas 154 enters each half of the first laterally extending space portion 116a and the toroidally shaped space portions 118a, 118b to wash half of the pumping liner 110 before opening. It may enter the processing space 106 through one half of the holes 112 to clean chamber components, such as the gas distribution member 102 and the substrate support 104 that define the processing space 106 . The third gas stream 154 may then enter the remaining half of each of the toroidally shaped void portions 118 a , 118 b and the second laterally extending void portion 116 b to clean the remaining half of the pumping liner 110 . .

[0065] As shown in FIGS. 6A and 6B, the choke plates 170a, 170b may be centered in the toroidal shaped space portions 118a, 118b so that the apertures 112 of the pumping liner 110 are aligned with the first sub-space 115a. It may be divided into an equal number of apertures 112 for establishing fluid access between the processing space 106 and for establishing fluid access between the second sub-space 115b and the processing space 106. FIG. Thus, apertures 112 may be symmetrically distributed on either side of each choke plate 170a, 170b to facilitate uniform flow distribution. The choke plates 170a, 170b may also bisect each of the toroidal-shaped space portions 118a, 118b. Such halving may facilitate creating and/or maintaining a uniform flow profile within processing space 106 during deposition and/or cleaning processes. By centering the choke plates 170a, 170b in the toroidally shaped space portions 118a, 118b, the third gas flow 154 is directed through the apertures establishing fluid access between the first subspace 115a and the processing space 106. 112 and through all of the apertures 112 that establish fluid access between the processing space 106 and the second sub-space 115b. The third gas 154 may then be distributed throughout the processing space 106 .

[0066] Further, compared to the concentration of the third gas stream 154 inside the process space 106 when the choke plates 170a, 170b are not utilized, the concentration of the third gas 154 inside the process space 106 is choked. By incorporating the plates 170 a , 170 b into the pumping liner 110 , the concentration of the third gas 154 can be significantly higher and substantially uniform throughout the processing space 106 . In some implementations, the concentration of the third gas 154 within the pumping liner 110 and/or the process space 106 may be greater than or equal to about 104 ppm, greater than or equal to about 105 ppm, greater than or equal to about 106 ppm, or greater. Thus, effective cleaning of the pumping liner 110 and various chamber components that define the processing space 106 can be efficiently achieved.

[0067] Due to the presence of the choke plates 170a, 170b, in some embodiments, when the first gas 150 is allowed to flow, there is a first gas flow within the first sub-space 115a of the pumping liner 110. 150 or second gas stream 152 may not be present. Thus, the mass fraction of third gas 154 within first subspace 115a of pumping liner 110 is at least about 90%, at least about 95%, or up to 100% when various steps of method 400 may be performed. %. The mass fraction of the third gas 154 within the second subspace 115b is at least about 60%, at least about 65%, at least about 70%, at least about 75%, at least about 80%, at least about 85%, at least It may be about 90%, at least about 95%, or higher. Due to the presence of the first gas flow 150 and/or the second gas flow 152 within the second sub-space 115b, the mass fraction of the third gas 154 within the second sub-space 115b is reduced to the first , the concentration of the third gas 154 in the second sub-space 115b of the pumping liner 110 is nevertheless very high. It can be high and may be about 104 ppm or more, about 105 ppm or more, about 106 ppm or more, or even more for effective cleaning. Thus, by incorporating the choke plates 170a, 170b into the pumping liner 110, the various chamber components defining the process space 106 and, for example, the pumping liner 110, the ducts defining the foreline spaces 140a, 140b, the exhaust space 142. Effective and efficient cleaning of other downstream chamber components, such as, can be achieved.

[0068] In some embodiments, the choke plates 170a, 170b may be separate components that can be placed within the interior space 114 of the pumping liner 110. As shown in FIG. In some implementations, the pumping liner 110 may be made by assembling an upper portion with a downward opening and a lower portion with an upward opening that matches the downward opening of the upper portion. The choke plates 170a, 170b may be placed within or incorporated within one of the top or bottom prior to assembly. In some embodiments, pumping liner 110 may be made by assembling together a left portion or half and a right portion or half. The left-hand portion may define a first laterally-extending spatial portion 116a and half of each of the toroidally-shaped spatial portions 118a, 118b, and the right-hand portion may define a second laterally-extending spatial portion 116b, and each half of the toroidal-shaped space portions 118a, 118b. At least one of the left portion or the right portion may include closed ends that define halves of the toroidal shaped void portions 118a, 118b. Thus, when the left and right portions can be assembled, the toroidal shaped space portions 118a, 118b can be divided by the closed ends, which effectively act as the choke plates 170a, 170b described above. can. Various other ways of incorporating the choke plates 170a, 170b within the pumping liner 110 may be implemented.

[0069] The choke plates 170a, 170b are between about 0.2 mm and about 4 mm, between about 0.5 mm and about 3.5 mm, between about 1 mm and about 3 mm, between about 1.5 mm and about 2.5 mm. It can have a thickness ranging between Each of the choke plates 170a, 170b may have a thickness of about 0.5 mm, about 1 mm, about 1.5 mm, about 2 mm, about 2.5 mm, about 3 mm, about 3.5 mm, or about 4 mm. Choke plates 170a, 170b may be made of the same material as pumping liner 110, which may include aluminum, alumina, and any other suitable chamber component material, depending on the particular application. Although two choke plates 170a, 170b are described as an example, more than two choke plates 170 may be utilized based on various other considerations. Additionally, depending on the application and various other considerations, two or more choke plates may optionally be added to or instead of the center of the toroidally-shaped space portions 118a, 118b to regulate gas flow. Other positions may be used.

[0070] The first gas 150, or in-situ cleaning gas, may be a single gas or a mixture of gases, and/or may include plasma emissions having radicals of the in-situ cleaning gas. In some implementations, a plasma may be generated within a remote plasma source or unit coupled to the processing chamber 100 and then flowed into the processing space 106 of the processing chamber 100 . In some implementations, plasma emissions may be generated locally within processing chamber 100 , such as a capacitively coupled plasma generated within processing space 106 . As discussed above, in some embodiments, the processing space 106 may be cleaned by a third gas 154, or an ex-situ cleaning gas, so that the first gas 150 is used to remove material deposited on the chamber components. may not be a cleaning gas that can actively react with The first gas 150 may include one or more inert gases, such as nitrogen or noble gases, to prevent the ex-situ cleaning gas 154 from flowing back into the upstream components of the processing chamber 100 .

[0071] The second gas 152 comprises a single gas or gas mixture that can be inert and non-reactive to materials deposited on chamber components or other gases delivered into the processing chamber 100. obtain. Second gas 152 may be or include nitrogen, one or more noble gases such as helium, neon, argon, krypton, xenon, and radon. The third gas 154, or the ex-situ cleaning gas, may be a single gas or a mixture of gases and/or may include plasma emissions having radicals of the ex-situ cleaning gas. Plasma may be generated within a remote plasma source or unit and then flowed into processing chamber 100 via bypass space 144 . In some implementations, third gas 154 may include oxygen or oxygen radicals, although any other suitable cleaning gas may be utilized depending on the material deposition to be removed from various chamber components. .

[0072] During various processes described herein, including deposition, in-situ cleaning, and/or ex-situ cleaning, the operating pressure of processing chamber 100 may be maintained between about 1 torr and about 10 torr, or , about 2 torr, about 4 torr, about 6 torr, about 8 torr, or about 10 torr. In some embodiments, the operating pressure may be maintained at generally the same or similar levels during different processes. In some implementations, the operating pressure may vary from process to process.

[0073] Depending on the process, the flow rates of the various gas streams, eg, first gas stream 150, second gas stream 152, and/or third gas stream 154, may vary from process to process. During ex-situ cleaning, second gas flow 152 may be maintained at a higher level than first gas flow 150 and third gas flow 154 may be maintained at a higher level than second gas flow 152 .

[0074] In some embodiments, during ex-situ cleaning, the first gas stream 150 is at least about 200 sccm, at least about 300 sccm, at least about 400 sccm, at least about 500 sccm, at least about 600 sccm, at least about 700 sccm, at least about 800 sccm, It can be maintained at a level of about 900 sccm or higher, about 1000 sccm or higher, about 1100 sccm or higher, about 1200 sccm or higher, about 1300 sccm or higher, about 1400 sccm or higher, about 1500 sccm or higher, or higher.

[0075] In some embodiments, during ex-situ cleaning, the second gas stream 152 is at level can be maintained. The third gas flow 154 is at a level of about 4000 sccm or greater, about 4500 sccm or greater, about 5000 sccm or greater, about 5500 sccm or greater, about 6000 sccm or greater, about 6500 sccm or greater, about 7000 sccm or greater, about 7500 sccm or greater, about 8000 sccm or greater, or higher. can be maintained.

[0076] In some embodiments, during ex-situ cleaning, the ratio of the flow rate of the first gas 150 to the flow rate of the third gas 154 can range between 1:5 and 1:15, or about 1:5, about 1:6, about 1:7, about 1:8, about 1:9, about 1:10, about 1:11, about 1:12, about 1:13, about 1:14, It can be about 1:15 or less. The ratio of the flow rate of the second gas 152 to the flow rate of the third gas 154 can range between 1:2 and 1:5, or about 1:2, about 1:3, about 1:4. , about 1:5, or less.

[0077] During deposition, the flow of the third gas 154 may be maintained continuously to prevent the deposition gas from flowing into the bypass space 144 and other chamber spaces upstream of the bypass space 144. Valve 160 may be opened during deposition so that substantially all of third gas flow 154 is directed from bypass space 144 to a small region of first laterally extending space portion 116 a of interior space 114 of pumping liner 110 . through and then into the first foreline space 140a. Substantially zero or a very limited amount of the third gas stream 154 may flow over the baffle or enter the space in the pumping liner 110 behind the baffle or the process space 106 . However, the third gas flow 154 is effective with respect to the pressure and flow profile of the deposition gas within the processing space 106 so as to limit any amount of the third gas 154 that may be present within the processing space 106 . It can be maintained at a relatively low level compared to during ex situ cleaning so as to limit any possible effects.

[0078] In some embodiments, during deposition, the third gas flow 154 effectively restricts or prevents deposition gases from entering the bypass space 144 and other chamber spaces upstream of the bypass space 144. , about 600 sccm or less, about 500 sccm or less, about 400 sccm or less, about 300 sccm or less, about 200 sccm or less, about 100 sccm or less, about 75 sccm or less, about 50 sccm or less, or less. The ratio of the flow rate of the third gas 154 to the flow rate of the first gas 150 can range between 1:5 and 1:100, or about 1:5, about 1:8, about 1:10 , about 1:20, about 1:30, about 1:40, about 1:50, about 1:60, about 1:80, about 1:100, or less. The ratio of the flow rate of the third gas 154 to the flow rate of the second gas 152 can range between 1:2 and 1:50, or about 1:2, about 1:4, about 1:8. , about 1:10, about 1:15, about 1:20, about 1:30, about 1:40, about 1:50, or less. By maintaining the third gas stream 154 at a relatively low level, the concentration, if any, of the third gas 154 within the processing space 106 is less than 4 ppm, less than 3 ppm, less than 2 ppm, less than 1 ppm, less than 0.5 ppm. less than, less than 0.1 ppm, or less.

[0079] In some embodiments, depending on the flow rate of the first gas 150, the second gas 152, and/or the third gas 154, along a direction perpendicular to the orientation of the choke plates 170a, 170b, , a small or minimal pressure skew within the processing space 106 can be observed. In other words, the pressure profile may not be perfectly concentric or axisymmetric within the processing space 106 about the central axis of the processing space 106 .

[0080] FIG. 7 schematically illustrates the pressure profile inside the processing space 106 for different flow rates of the third gas 154. As shown in FIG. For example, when the third gas 154 may be flowed at 500 sccm, a pressure skew or pressure of about 0.001 torr or less at two peripheral locations in the processing space 106 along the direction perpendicular to the orientation of the choke plates 170a, 170b. A difference can be observed. When the third gas 154 is allowed to flow at 100 seem, a pressure skew or pressure difference of about 0.0002 torr or less may be observed at the same two peripheral locations along the direction perpendicular to the orientation of the choke plates 170a, 170b. . Depending on the particular application, such pressure differential may be ignored.

[0081] To eliminate any pressure skew that may be created by the third gas stream 154, two bypass streams may be created as shown in FIG. As discussed above, the pumping liner 110 is designed to provide fluid access from the bypass space 144 or the first bypass space 144a shown in FIG. or a first bypass gas inlet. In the embodiment shown in FIG. 8, pumping liner 110 may further include a second bypass gas inlet for providing fluid access into second laterally extending space portion 116b from second bypass space 144b. The third gas 154 is flowed into the first laterally extending space portion 116a through the first bypass space 144a at a common flow rate, such as any of the flow ranges or levels of the third gas flow 154 discussed above. simultaneously into the second laterally extending space portion 116b through the second bypass space 144b. The co-flow 154a, 154b of the third gas 154 may facilitate creating and/or maintaining a concentric or axially symmetrical pressure profile in the processing space 106 during deposition.

[0082] FIG. 9 illustrates exemplary steps of a method 900 that utilizes ex-situ cleaning to clean the processing space 100. As shown in FIG. 10A and 10B schematically illustrate method 900. FIG. Specifically, Figures 10A and 10B schematically illustrate flow spaces defined by various chamber components. FIG. 10A schematically shows a right perspective view of a flow space during which one or more steps of method 900 may be performed. FIG. 10B schematically shows the same perspective view of FIG. 10B while one or more other steps of method 900 may be performed. Various steps of method 900 may be performed in any order and may be removed or modified.

[0083] The method 900 flows a first or in-situ cleaning gas through the gas distribution member 102 into the processing space 106 at step 905 and flows a second gas 152 in an upward direction toward the processing space 106 at step 910. , through the gap 122 surrounding the substrate support 104, and in step 915 a third or ex situ cleaning gas from the first and second bypass spaces 144a, 144b through the first and second bypass inlets, respectively, into the interior of the pumping liner 110. It may begin by flowing into space 114 . The first gas, second gas, and third gas flows during method 900 are respectively the first gas 150, second gas 152, and third gas 154 flowed during method 400 above. can be the same. The flow rate of the first gas 150, the flow rate of the second gas 152, and the flow rate of the third gas 154 may be maintained at any of the flow rates discussed above. Additionally, the operating pressure of processing chamber 100 may be maintained at any of the pressure levels or ranges discussed above.

[0084] At step 920, the valves 160b disposed along the foreline defining the second foreline space 140b are closed so as to prevent flow through the second foreline space 140b. be able to. Valve 160b may be equivalent, the same, or similar to valve 160a disposed along the foreline that defines first foreline space 140a. For purposes of explanation, valve 160a and valve 160b may be referred to as first foreline valve 160a and second foreline valve 160b, respectively.

[0085] At step 925, a third gas or The flow of the ex-situ cleaning gas is stopped, for example, by closing a valve that may be positioned upstream of the first bypass gas inlet and configured to control the flow of the ex-situ cleaning gas into the first bypass space 144a. can be At step 925, the flow of ex-situ cleaning gas from the second bypass space 144b through the second bypass gas inlet of the pumping liner 110 and into the second sub-space 115b may be maintained.

[0086] Upon completion of step 925, gas or fluid flow as shown in FIG. 10A may be achieved. Specifically, ex-situ cleaning gas may be flowed from the second bypass space 144b into the second sub-space 115b. Due to the closure of valve 160b and the presence of choke plates 170a, 170b, the ex-situ cleaning gas then enters the processing space 106 through half of the apertures 112 in the pumping liner 110 and then into the pumping liner 110. can enter into the first sub-space 115a through the other half of the aperture 112 of . The ex situ cleaning gas may then flow through the first foreline space 140a and the exhaust space 142 toward the exhaust. Flow of the ex situ cleaning gas through various flow spaces, such as shown in FIG. Various other downstream ducts and chamber components exposed to the flow may be cleaned. The flow of ex-situ cleaning gas as shown in FIG. 10A can be maintained until the various chamber components can be sufficiently cleaned.

[0087] At step 930, flow of ex-situ cleaning gas from the first bypass space 144a through the first bypass gas inlet of the pumping liner 110 into the interior space 114, or more specifically, the first sub-space 115a. can be restarted. At step 935, the second foreline valve 160b may be opened, and at step 940, the first foreline valve 160a is closed to prevent fluid flow through the first foreline space 140a. good too.

[0088] At step 945, flow of ex-situ cleaning gas from the second bypass space 144b through the second bypass gas inlet of the pumping liner 110 into the interior space 114, and more specifically, the second sub-space 115b. may be stopped, for example, by closing a valve that may be positioned upstream of the second bypass gas inlet and configured to control the flow of ex situ cleaning gas into the second bypass space 144b. At step 945, flow of ex-situ cleaning gas from the first bypass space 144a through the first bypass gas inlet of the pumping liner 110 and into the first sub-space 115a may be maintained.

[0089] Upon completion of step 945, gas or fluid flow as shown in FIG. 10B may be achieved. Specifically, an ex-situ cleaning gas may be flowed from the first bypass space 144a into the first sub-space 115a. Due to the closure of valve 160a and the presence of choke plates 170a, 170b, the ex-situ cleaning gas then enters the processing space 106 through half of the apertures 112 in the pumping liner 110 and then into the pumping liner 110. can enter into the second subspace 115b through the other half of the aperture 112 of the second subspace 115b. The ex situ cleaning gas may then flow through the second foreline space 140b and the exhaust space 142 toward the exhaust. The flow of the ex situ cleaning gas through the various flow spaces as shown in FIG. Various other downstream duct and chamber components exposed to the flow may also be cleaned. The ex-situ cleaning gas flow as shown in FIG. 10B can be maintained until the various chamber components can be sufficiently cleaned.

[0090] Once the processing chamber 100 has been cleaned by performing some or all of steps 905 through 945, step 950 cleans the second bypass gas inlet of the pumping liner 110 from the first bypass space 144b. The flow of ex-situ cleaning gas through the interior space 114, or more specifically into the first sub-space 115a, can be resumed. At step 955, the first foreline valve 160a may be opened. The flow rate of the ex-situ cleaning gas and the flow rates of the first and second gases are adjusted to the appropriate levels discussed above for performing the deposition process, or other suitable levels for various other processes. can be

[0091] By performing one or more steps of method 900, chamber components downstream of processing space 106 and chamber components defining processing space 106, such as gas distribution member 102 and substrate support 104, are: It may be cleaned using an ex situ cleaning gas delivered through the bypass inlet of the pumping liner 110 . An ex-situ wash can be delivered at the same time as an in-situ wash. Thus, chamber components defining processing space 106, chamber components upstream of processing space 106, and chamber components downstream of processing space 106 may be cleaned simultaneously. The entire processing chamber 100 can be cleaned more efficiently compared to using in-situ cleaning alone, thus improving manufacturing throughput.

[0092] In the above description, for purposes of explanation, numerous details are set forth in order to facilitate an understanding of various implementations of the technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

[0093] Having disclosed several embodiments, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be taken as limiting the scope of the technology. Additionally, although the method or process may be described in a sequential or step-by-step manner, it should be understood that the operations may be performed simultaneously or in a different order than described.

[0094] Where a range of values is provided, it should be understood that each intervening value between the upper and lower values of the range represents the smallest unit of the lower value, unless the context clearly indicates otherwise. are specifically disclosed. Any narrower range between any stated value or any intervening value in a stated range, as well as any other stated or intervening value in that stated range, is also included. The upper and lower limits of these smaller ranges may individually be included in or excluded from the range, and the smaller range may include either, neither, or both of the limits. Each range is also encompassed within this technical range, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both limits, ranges excluding either or both of those included limits are also included.

[0095] As used in this specification and claims, the singular forms "a," "an," and "the" include plural references unless the context clearly indicates otherwise. . Thus, for example, reference to "a precursor" includes a plurality of such precursors, and reference to "the layer" is well known to those skilled in the art. includes reference to one or more layers of and equivalents, as well as other forms.

[0096] Also, "comprise(s)", "comprising", "contain(s)", "containing", "include ( s))" and the terms "including" when used in the specification and claims specify the presence of a stated feature, integer, component or step. , but does not exclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims (15)

a processing chamber,
a gas distribution member;
a substrate support positioned below the gas distribution member, the gas distribution member and the substrate support at least partially defining a processing space, the gas distribution member directing fluid into the processing space; a substrate support providing access;
a pumping liner positioned radially outwardly from the substrate support, comprising:
the pumping liner defines a plurality of apertures circumferentially arranged around the processing space and an interior space in fluid communication with the processing space through the plurality of apertures;
the pumping liner further defines a gas inlet positioned radially outwardly from the plurality of apertures, the gas inlet providing fluid access into the interior space of the pumping liner;
a pumping liner;
a flow control mechanism for directing fluid flow through said gas inlet into said interior space and then through said plurality of apertures in said pumping liner during fluid distribution from said gas distribution member into said process space; a flow control mechanism operable to direct into said processing space through a subset of a processing chamber. The flow control mechanism includes a first choke plate and a second choke plate disposed within the pumping liner, wherein the first choke plate and the second choke plate extend from the pumping liner. dividing the interior space into a first space and a second space, the first space being in fluid communication with the processing space through half of the plurality of apertures, and the second space; is in fluid communication with the processing chamber through the other half of the plurality of apertures, and the flow control mechanism directs fluid flow from the first space through the processing space to the second space. 3. The processing chamber of claim 1, operable to point inwards. The flow control mechanism includes a valve positioned downstream of the gas outlet and upstream of the exhaust, the valve directing fluid flow from the interior space of the process chamber or the pumping liner through the gas outlet to the exhaust. 3. The processing chamber of claim 1, wherein the processing chamber is operable to close to prevent the gas outlet is a first gas outlet, the valve is a first valve, and the flow control mechanism is located at a second gas outlet, downstream from the second gas outlet and upstream from the exhaust. a second valve, wherein the gas inlet is the first gas inlet, the pumping liner further defines a second gas inlet, the second valve directing the flow from the gas distribution member to the gas distribution member; during fluid distribution to the processing space, for directing fluid flow into the interior space through the second gas inlet and then into the processing space through another subset of the plurality of apertures; 4. The processing chamber of claim 3, operable to close. The pumping liner includes a first internal baffle and a second internal baffle diametrically opposed to each other, the first baffle being positioned between the gas inlet and the plurality of apertures. , the processing chamber of claim 1. The pumping liner is
a first portion defining a first laterally extending spatial portion of the interior space of the pumping liner, wherein the gas inlet is located on an upper surface of the first portion; ;
a second portion defining a second laterally extending spatial portion of the interior space of the pumping liner, the first laterally extending spatial portion and the second laterally extending spatial portion; a second portion diametrically opposed to each other;
a third portion defining a first toroidally shaped spatial portion of said interior space of said pumping liner, wherein said first toroidally shaped spatial portion comprises said first laterally extending spatial portion and said a third portion disposed between the second laterally extending spatial portion;
a fourth portion defining a second toroidally-shaped spatial portion of the interior space of the pumping liner, wherein the first toroidally-shaped spatial portion and the second toroidally-shaped spatial portion are aligned with each other; 3. The processing chamber of claim 1, comprising a fourth portion that is diametrically opposed. The gas inlet is a first gas inlet, the pumping liner further defines a second gas inlet located on the upper surface of the second portion, and the flow control mechanism is adapted to direct flow from the gas distribution member to the gas inlet. during fluid distribution into the process space, directing fluid flow through the second gas inlet into the interior space of the pumping liner and then through another subset of the plurality of apertures of the pumping liner; 7. The processing chamber of claim 6, further operable to direct into said processing space. 2. The processing chamber of claim 1, further comprising an annular gap around said substrate support to provide fluid access from a lower portion of said processing chamber to said processing space and said interior space of said pumping liner. A method for cleaning a processing chamber comprising:
flowing a first gas through a gas distribution member of a processing chamber into a processing space defined at least partially by the gas distribution member of the processing chamber and a substrate support;
flowing a second gas through a gas inlet of a pumping liner of the processing chamber and into an interior space of the pumping liner, the pumping liner being positioned radially outward from the substrate support; and flowing a second gas, said interior space being in fluid communication with said process space through a plurality of apertures in said pumping liner circumferentially disposed about said process space;
directing a portion of the second gas from the interior space of the pumping liner through apertures of a first subset of the plurality of apertures while maintaining the flow of the first gas within the process space; flowing into the treatment space;
and flowing said portion of said second gas from said process space through apertures of a second subset of said plurality of apertures and into said interior space of said pumping liner. said interval volume of said pumping liner comprising a first space and a second space separated by a pair of choke plates;
Flowing the second gas through the gas inlet of the pumping liner into the interior space of the pumping liner causes the second gas to flow into the first space through the gas inlet of the pumping liner. including;
flowing said portion of said second gas from said interior space of said pumping liner into said processing space; flowing said portion of said second gas from said first space into said processing space; wherein said portion of said second gas is distributed throughout said processing space;
flowing said portion of said second gas from said process space into said interior space of said pumping liner flowing said portion of said second gas from said process space into said second space; including,
10. The method of claim 9. The first gas is distributed throughout the processing space at a substantially uniform concentration, the first gas is flowed at a first flow rate, and the second gas is flowed at a rate greater than the first flow rate. 10. The method of claim 9, wherein the second flow rate is greater. the gas inlet is a first gas inlet;
ceasing flow of the second gas into the interior space of the pumping liner through the first gas inlet of the pumping liner;
flowing a third gas into the interior space of the pumping liner through a second gas inlet of the pumping liner;
flowing a portion of the third gas from the interior space of the pumping liner through apertures of the second subset of the plurality of apertures and into the processing space;
flowing said portion of said third gas from said process space through said first subset of apertures of said plurality of apertures and into said interior space of said pumping liner;
10. The method of claim 9, further comprising: 10. The method of Claim 9, further comprising flowing a third gas in an upward direction toward the processing space through an annular gap surrounding the substrate support. A deposition method comprising:
flowing a first gas through a gas distribution member of a processing chamber into a processing space at least partially defined by a substrate support of the processing chamber supporting a semiconductor substrate thereon and the gas distribution member;
flowing a second gas through a gas inlet of a pumping liner of the processing chamber and into an interior space of the pumping liner, the pumping liner being positioned radially outward from the substrate support; wherein said interior space of said pumping liner is in fluid communication with said process space via a plurality of apertures circumferentially disposed about said process space, said first gas having a first flow rate; wherein the second gas is substantially prevented from flowing into the processing space while the first gas is flowing from the processing space through the plurality of apertures. flowed into the interior space of the pumping liner at a second flow rate less than the first flow rate and a pressure difference between two peripheral locations within the process space of less than 0.1 torr; , and flowing a second gas. the gas inlet is a first gas inlet, and the deposition method further comprises:
flowing a third gas into the interior space of the pumping liner through a second gas inlet of the pumping liner, wherein the first gas inlet and the second gas inlet are diametrically spaced from each other; and the third gas is flowed at a third flow rate less than the first flow rate such that the flow of the third gas into the processing space is substantially prevented. wherein said flow of said first gas, said flow of said second gas, and said flow of said third gas collectively flow through said processing space about a central axis of said processing space; flowing a third gas that creates an axially symmetrical pressure profile therein;
15. The method of claim 14, comprising flowing the third gas in an upward direction toward the processing space through an annular gap surrounding the substrate support.

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