TWM599997U - Semiconductor processing system component - Google Patents

Abstract

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Description

Semiconductor processing system components

This technology involves semiconductor systems, processes, and equipment. More specifically, the present technology relates to systems and methods for delivering precursors in systems and chambers.

Integrated circuits are made possible by the process of producing complex patterned material layers on the surface of the substrate. The production of patterned material on the substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring patterns in the photoresist to the underlying layer, thinning layers, or thinning the lateral dimensions of features already present on the surface. It is generally desirable to have an etching process that etches one material faster than another, to facilitate, for example, a pattern transfer process or individual material removal. It is said that this etching process is selective to the first material. Due to the diversity of materials, circuits and manufacturing processes, etching processes with selectivity to various materials have been developed.

The etching process may be called wet or dry based on the materials used in the process. Wet HF etching removes silicon oxide in preference to other dielectrics and materials. However, the wet process may have difficulty penetrating some constrained grooves and sometimes may deform the remaining material. The dry etching process can penetrate into complex features and trenches, but may not provide an acceptable top-to-bottom profile. As component sizes continue to shrink in next-generation components, the way the system delivers precursors into and through the chamber may have an increasing impact. As the importance of uniformity of processing conditions continues to increase, chamber design and system settings may play an important role in the quality of the produced components.

Therefore, there is a need for improved systems and methods that can be used to produce high-quality components and structures. This technology addresses these and other needs.

An exemplary semiconductor processing system may include a processing chamber, and may include a remote plasma unit coupled to the processing chamber. The exemplary system may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold is characterized by a first end and a second end opposite the first end, and may be coupled to the processing chamber at the second end. The mixing manifold may define a central passage through the mixing manifold, and may define ports along the exterior of the mixing manifold. The port may be fluidly coupled with a first groove defined in the first end of the mixing manifold. The first groove may be characterized by an inner radius and an outer radius at the first inner side wall, and the first groove may provide a fluid passage through the first inner side wall to the central channel.

In some embodiments, the mixing manifold may further include a second groove defined in the first end of the mixing manifold. The second groove may be positioned radially outside of the first groove, and the port may be fluidly coupled with the second groove. The second groove may be characterized by the inner radius at the second inner side wall. The second inner sidewall may also define the outer radius of the first groove. The second inner side wall may define a plurality of holes that are defined through the second inner side wall and provide a fluid passage to the first groove. The first inner side wall may define a plurality of holes that are defined through the first inner side wall and provide a fluid passage to the central passage. Each of the plurality of holes defined through the second inner side wall may be offset from each of the plurality of holes defined through the first inner side wall.

The system may also include an isolator coupled between the mixing manifold and the remote plasma unit. The isolator may be ceramic or contain ceramic. The system may also include an adapter coupled between the mixing manifold and the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel extending partially through the adapter. The adapter may define a port that passes through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined in the adapter. The mixing channel may be fluidly coupled with the central channel. The adapter may contain oxide on the inner surface of the adapter. The system may also include a spacer between the adapter and the mixing manifold.

This technology can also cover semiconductor processing systems. The system may include a remote plasma unit. The system may include a processing chamber, which may include a gas box defining a central passage. The system may include a zone partition coupled to the gas box. The zone divider may define a plurality of holes through the zone divider. The system may include a panel that is coupled to the zone divider at the first surface of the panel. The system may also include a mixing manifold coupled to the gas tank. The mixing manifold may be characterized by a first end and a second end opposite the first end. The mixing manifold may be coupled with the processing chamber at the second end. The mixing manifold may define a central passage through the mixing manifold, the central passage being fluidly coupled with a central passage defined through the gas box. The mixing manifold may define ports along the exterior of the mixing manifold. The port may be fluidly coupled with a first groove defined in the first end of the mixing manifold. The first groove may be characterized by an inner radius and an outer radius at the first inner side wall. The first groove may provide a fluid passage through the first inner side wall to the central channel.

In some embodiments, the system may also include a heater that is externally coupled to the gas box around a mixing manifold coupled to the gas box. The mixing manifold can be nickel or contain nickel. The system may include an adapter coupled to the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel that extends from the first end of the adapter partially through the adapter to a midpoint of the adapter. The adapter may define a plurality of access channels extending from the midpoint of the adapter to the second end of the adapter. The plurality of access channels may be distributed radially around a central axis passing through the adapter. The adapter may define a port that passes through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined in the adapter. The mixing channel may extend through the central portion of the adapter toward the second end of the adapter. The adapter may define a port that passes through the exterior of the adapter. The port may be fluidly coupled with a mixing channel defined in the adapter. The mixing channel may extend through the central portion of the adapter toward the midpoint of the adapter to fluidly enter the central channel defined by the adapter.

The present technology can also cover methods of transferring precursors through semiconductor processing systems. The method may include forming a plasma of a fluorine-containing precursor in a remote plasma unit. The method may include flowing a plasma effluent of a fluorine-containing precursor into an adapter. The method may include flowing a hydrogen-containing precursor into the adapter. The method may include mixing a hydrogen-containing precursor with a plasma effluent to produce a first mixture. The method may include flowing the first mixture into a mixing manifold. The method may include flowing the third precursor into the mixing manifold. The method may include mixing the third precursor with the first mixture to produce a second mixture. The method may further include flowing the second mixture into the processing chamber.

Such technologies can provide many benefits over conventional systems and technologies. For example, compared to traditional designs, the present technology can utilize a limited number of components. In addition, by using components that generate etchant substances outside the chamber, mixing and delivery to the substrate can be provided more uniformly on conventional systems. These and other embodiments and their many advantages and features are described in more detail in conjunction with the following description and drawings.

The technology includes semiconductor processing systems, chambers, and components used to perform semiconductor manufacturing operations. Many dry etching operations performed during semiconductor manufacturing may involve multiple precursors. When energized and combined in various ways, these etchants can be delivered to the substrate to remove or modify various aspects of the substrate. Conventional processing systems can provide precursors in a variety of ways, such as for deposition or etching. One method of providing enhanced precursors is to provide all precursors through a remote plasma unit before transporting the precursors through the processing chamber and to the substrate (eg, wafer) for processing. However, the problem with the process is that different precursors may react with different materials, which may cause damage to the remote plasma unit or components that transport the precursor. For example, the enhanced fluorine-containing precursor may react with the aluminum surface, but may not react with the oxide surface. The enhanced hydrogen-containing precursor may not react with the aluminum surface in the remote plasma cell, but may react with and remove the oxide coating. Therefore, if two precursors are transported through the remote plasma cell together, they may damage the coating or lining in the cell. In addition, the electricity/power to ignite the plasma may affect the process being performed by the amount of dissociation generated. For example, in some processes, a large amount of dissociation of hydrogen-containing precursors may be beneficial, but a lower amount of dissociation of fluorine-containing precursors may allow for more controlled etching.

The traditional processing can also transport a precursor through the remote plasma device for plasma processing, and can transport the second precursor directly into the chamber. However, the problem with this process is that the mixing of precursors may be difficult, may not provide sufficient control over the generation of etchant, and may not provide uniform etchant on the wafer or substrate. This may result in the inability to perform the process uniformly on the substrate surface, which may cause component problems as the patterning and formation continue.

The present technology can overcome these problems by using components and systems that are configured to mix the precursors before delivering them into the chamber while only one etchant precursor is delivered through The remote plasma unit, but it is also possible to make a variety of precursors (such as carrier gas or other etchant precursors) flow through the remote plasma unit. Specific bypass schemes can completely mix the precursors before delivering them to the processing chamber, and can provide intermediate mixing when each precursor is added to the system. This can allow a uniform process to be performed while protecting the remote plasma cell. The chamber of the present technology may also include a component configuration that maximizes the thermal conductivity through the chamber and increases the convenience of maintenance by coupling the components in a specific manner.

Although the remaining disclosure will conventionally identify specific etching processes using the disclosed technology, it will be readily understood that the system and method are equally applicable to deposition and cleaning processes that may occur in the chamber. Therefore, it should not be considered that the technology is limited to etching processes. Before describing the various component aspects and variations of the system according to the embodiment of the present technology, the present disclosure will discuss a possible system and chamber that can be used with the present technology to perform certain removal operations.

FIG. 1 shows a top plan view of one embodiment of a processing system 100 having a deposition chamber, an etching chamber, a baking chamber, and a curing chamber according to an embodiment. In this figure, a pair of front opening unified pod (FOUP) 102 supplies various sizes of substrates, which are received by the robot arm 104 and placed in the low pressure holding area 106, and then placed Into one of the substrate processing chambers 108a-f positioned in the series section 109a-c. The second robot arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chamber 108a-f and back. In addition to loop layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation and other substrate processes, each substrate The processing chambers 108a-f can also be equipped to perform a variety of substrate processing operations, including the dry etching process described herein.

The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and/or etching the dielectric film on the substrate wafer. In one configuration, two pairs of processing chambers (such as 108c-d and 108e-f) can be used to deposit dielectric materials on the substrate, and a third pair of processing chambers (such as 108a-b) can be used to etch the deposited dielectric quality. In another configuration, all three pairs of chambers (e.g., 108a-f) can be configured to etch the dielectric film on the substrate. Any one or more of the processes described can be performed in a chamber(s) separate from the manufacturing system shown in the different embodiments. It should be understood that additional configurations of the deposition, etching, annealing, and curing chambers for the dielectric film are considered by the system 100.

Figure 2 shows a schematic cross-sectional view of an exemplary processing system 200 according to an embodiment of the technology. The system 200 may include a processing chamber 205 and a remote plasma unit 210. The remote plasma unit 210 may be coupled with a processing chamber 205 having one or more components. The remote plasma unit 210 may be coupled with one or more of the isolator 215, the adapter 220, the spacer 230, and the mixing manifold 235. The mixing manifold 235 may be coupled with the top of the processing chamber 205 and may be coupled with the inlet of the processing chamber 205.

The isolator 215 may be coupled with the remote plasma unit 210 at the first end 211 and may be coupled with the adapter 220 at the second end 212 opposite to the first end 211. One or more channels can be defined by the isolator 215. An opening or port leading to the channel 213 may be defined at the first end 211. The channel 213 may be centrally defined within the isolator 215, and may be characterized by a first cross-sectional surface area in a direction perpendicular to the central axis passing through the isolator 215, which first cross-sectional surface area may be The direction of the flow of the unit 210. The diameter of the channel 213 may be equal to or the same as the outlet from the remote plasma unit 210. The passage 213 may be characterized by the length from the first end 211 to the second end 212. The passage 213 may extend through the entire length of the separator 215 or through a length less than the length from the first end 211 to the second end 212. For example, the channel 213 may extend less than half of the length from the first end 211 to the second end 212, the channel 213 may extend halfway from the first end 211 to the second end 212, and the channel 213 may extend beyond Half of the length from the first end 211 to the second end 212, or the channel 213 may extend from the first end 211 to the second end 212 of the separator 215 about half of the length.

The channel 213 may transition to a smaller hole 214 that extends through the second end 212 from the base of the channel 213 defined in the separator 215. For example, one such smaller hole 214 is shown in FIG. 2, but it should be understood that any number of holes 214 may be defined as passing through the separator 215 from the channel 213 to the second end 212. The smaller holes may be distributed around the central axis of the separator 215, as will be discussed further below. The smaller hole 214 can be characterized by a diameter less than or about 50% of the diameter of the channel 213, and can be characterized by a diameter less than or about 40% of the diameter of the channel 213, less than or about 30% of the diameter of the channel 213, less than or about 20% of the diameter of the channel 213, less than or about 10% of the diameter of the channel 213, less than or about 5% of the diameter of the channel 213, or less. The isolator 215 may also define one or more trenches defined under the isolator 215. The groove may be or include one or more annular grooves defined in the isolator 215 to allow seating of an o-ring or elastomeric element, which may allow coupling with the adapter 220.

Although other components of the processing system may be metal or thermally conductive material, the isolator 215 may be a material with lower thermal conductivity. In some embodiments, the isolator 215 may be or include ceramic, plastic, or other thermally insulating components that are configured to provide thermal isolation between the remote plasma cell 210 and the chamber 205. During operation, the remote plasma unit 210 may be cooled or operated at a lower temperature relative to the chamber 205, and the chamber 205 may be heated or operated at a higher temperature relative to the remote plasma unit 210. Providing ceramic or insulating isolators 215 can prevent or limit thermal, electrical, or other interference between components.

In an embodiment, the adapter 220 may be coupled with the second end 212 of the isolator 215. The adapter 220 may be characterized by a first end 217 and a second end 218 opposite to the first end 217. The adapter 220 may define one or more central channels through a portion of the adapter 220. For example, the central channel 219 or the first central channel may extend from the first end 217 at least partially through the adapter 220 toward the second end 218, and may extend through the adapter 220 of any length. Similar to the central channel 213 of the isolator 215, the central channel 219 can extend through the adapter 220 for less than half the length of the adapter 220, can extend about half the length of the adapter 220, or can extend beyond the adapter 220 Half the length. The central passage 219 may be characterized by a diameter, which may be related to the diameter of the passage 213 and be equal to or substantially equal to the diameter of the passage 213. Additionally, the central channel 219 may be characterized by the diameter of the hole 214 surrounding the separator 215 and in an embodiment precisely surrounding the shape of the hole 214, such as by being substantially similar or equivalent to being defined as passing through the separator from the central axis. 215 and extend to the radius of the outer edge of the diameter of each hole 214 is characterized by a radius. For example, the central channel 219 may be characterized by a circular or oval shape characterized by one or more diameters that may extend tangentially to the outer portion of each hole 214.

The adapter 220 may define a base of a central channel 219 within the adapter 220, which may define a transition from the central channel 219 to a plurality of holes 225, which may extend at least partially through the adapter 220 . The transition can occur at a midpoint through the adapter, which can be anywhere along the length of the adapter. For example, the hole 225 may extend from the base of the central channel 219 toward the second end 218 of the adapter 220 and may extend completely through the second end 218. In other embodiments, the hole 225 may extend from the first end into the central passage 219 through the middle portion of the adapter 220 to the second end into the second central passage 221, which may Extends through the second end 218 of the adapter 220. The central passage 221 may be characterized by a diameter similar to the diameter of the central passage 219, and in other embodiments, the diameter of the central passage 221 may be larger or smaller than the diameter of the central passage 219. The hole 225 can be characterized as having a diameter less than or about 50% of the diameter of the central channel 219, and can be characterized as having a diameter less than or about 40% of the diameter of the central channel 219, less than or about 30% of the diameter of the central channel 219, or less than Or about 20% of the diameter of the central channel 219, less than or about 10% of the diameter of the central channel 219, less than or about 5% of the diameter of the central channel 219, or less.

The adapter 220 may define the port 222 to pass through the exterior of the adapter 220, such as along a sidewall or side of the adapter 220. The port 222 may provide a passage for transporting the first mixed precursor to be mixed with the precursor provided from the remote plasma unit 210. The port 222 may provide a fluid passage to the mixing channel 223, which may extend at least partially through the adapter 220 toward the central axis of the adapter 220. The mixing channel 223 may extend into the adapter 220 at any angle, and in some embodiments, the first portion 224 of the mixing channel 223 may extend perpendicular to the central axis passing through the adapter 220 in the flow direction, but the first The part 224 may also extend toward the central axis passing through the adapter 220 at a certain inclination or deflection angle. The first portion 224 may span the hole 225, which may be distributed around the central axis of the adapter 220, similar to the hole 214 of the isolator 215 described above. Through this distribution, the first portion 224 can extend through the hole 225 toward the center axis of the adapter 220 without crossing or intersecting with the hole 225.

The first part 224 of the mixing channel 223 may transition to the second part 226 of the mixing channel 223, and the second part 226 may pass through the adapter 220 vertically. In some embodiments, the second portion 226 may extend along a central axis passing through the adapter 220 and be axially aligned therewith. The second part 226 may also extend through the middle part of a circle or other geometric shape, which extends through the central axis of each hole 225. The second part 226 may extend to the second central channel 221 together with the hole 225 and be fluidly coupled with the second central channel 221. Therefore, in some embodiments, the precursor delivered through the port 222 may be mixed with the precursor delivered through the remote plasma unit 210 in the lower portion of the adapter 220. This can constitute the first mixing stage in the part between the remote plasma unit 210 and the processing chamber 205.

Also shown in Figure 2 is an alternative embodiment in which the second portion 226 of the mixing channel 223 extends vertically in the opposite direction. For example, as described above, the second portion 226a may extend vertically toward the second central channel 221 to mix in the area. Alternatively, the second portion 226b may extend vertically toward the first central passage 219. Although shown in a hidden view, the second portion 226b is shown as a separate embodiment, and it should be understood that the adapter according to the present technology may include a first end 217 or a second end facing the adapter 220 The portion 218 extends any version of the second portion 226. When transported in the direction toward the first central channel 219, the mixing of the second precursor transported through the port 222 can occur within the first part of the adapter 220, and the precursor transported through the port 222 can be mixed with the slave The precursors delivered by the remote plasma unit 210 flow together through the plurality of holes 225 to provide improved uniformity. When conveying toward the second central channel 221, it is possible that less complete mixing may occur due to the flow of the precursor, which may increase the center concentration of the precursor conveyed through the central channel 221. When conveyed toward the first central channel 219, the precursors passing through the ports 222 can be distributed radially in the first central channel and advance more evenly through the holes 225 because the precursors are directed by the remote plasma unit 210 Downflow and/or pressure through the chamber.

The adapter 220 may be made of a material similar to or different from the isolator 215. In some embodiments, although the isolator may include ceramic or insulating materials, the adapter 220 may be made of aluminum or include aluminum, including aluminum oxide, treated aluminum, or some other surface on one or more surfaces. material. For example, the inner surface of the adapter 220 may be coated with one or more materials to protect the adapter 220 from damage that may be caused by plasma effluent from the remote plasma unit 210. The inner surface of the adapter 220 may be anodized with a series of materials that may be inert to fluorine plasma effluent and may include, for example, yttrium oxide or barium titanate. The adapter 220 may also define grooves 227 and 228, which may be annular grooves and may be configured to accommodate o-rings or other sealing elements.

The spacer 230 may be coupled with the adapter 220. The spacer 230 may be or include ceramic, and may be a material similar to the isolator 215 or the adapter 220 in an embodiment. The spacer 230 may define a central hole 232 passing through the spacer 230. The central hole 232 may be characterized as a tapered shape passing through the spacer 230 from a portion close to the second central passage 221 of the adapter 220 to the opposite side of the spacer 230. The portion of the central hole 232 close to the second central channel 221 may be characterized by a diameter equal to or similar to the diameter of the second central channel 221. In an embodiment, the central hole 232 may be characterized as a tapered percentage greater than or about 10% along the length of the spacer 230, and may be characterized as a tapered percentage greater than or about 20%, greater than or about 30%, Greater than or about 40%, greater than or about 50%, greater than or about 60%, greater than or about 70%, greater than or about 80%, greater than or about 90%, greater than or about 100%, greater than Or about 150%, greater than or about 200%, greater than or about 300%, or greater.

The mixing manifold 235 may be coupled with the spacer 230 at a first end 236 or a first surface, and may be coupled with the chamber 205 at a second end 237 opposite to the first end 236. The mixing manifold 235 may define a central channel 238 that may extend from the first end 236 to the second end 237 and may be configured for delivery of precursors into the processing chamber 205. The mixing manifold 235 may also be configured to blend additional precursors with the mixed precursor delivered from the adapter 220. The mixing manifold can provide a second mixing stage in the system. The mixing manifold 235 may define the ports 239 along the exterior of the mixing manifold 235, such as along the sides or side walls of the mixing manifold 235. In some embodiments, the mixing manifold 235 may define a plurality of ports 239 on opposite sides of the mixing manifold 235 to provide additional pathways for delivery of precursors to the system. The mixing manifold 235 may also define one or more grooves in the first surface 236 of the mixing manifold 235. For example, the mixing manifold 235 may define a first groove 240 and a second groove 241, which may provide a fluid passage from the port 239 to the central channel 238. For example, port 239 may provide access to channel 243, which may provide fluid access to one or two grooves, such as from below the grooves shown. The grooves 240, 241 will be described in more detail below.

The central passage 238 may be characterized by a first portion 242 extending from the first end 236 to the flared section 246. The first portion 242 may be characterized by a cylindrical profile, and may be characterized by a diameter similar or equal to the outlet of the central hole 232 of the spacer 230. In an embodiment, the flaring section 246 can be characterized as a flaring percentage greater than or about 10%, greater than or about 20%, greater than or about 30%, greater than or about 40%, greater than or about 50% , Greater than or about 60%, greater than or about 70%, greater than or about 80%, greater than or about 90%, greater than or about 100%, greater than or about 150%, greater than or about 200%, Greater than or about 300%, or greater. In an embodiment, the mixing manifold 235 may be made of a material similar to or different from the adapter 220. For example, the mixing manifold 235 may contain nickel, which may provide adequate protection for precursors that may all contact various parts of the mixing manifold. Different from the traditional technology, because the fluorine plasma effluent can already be mixed upstream of the mixing manifold, the problems related to recombination may not occur. For example, without wishing to be bound by any particular theory, nickel can catalyze the reconstitution of fluorine radicals into diatomic fluorine, which may cause polysilicon loss in conventional technology. When the fluorine effluent is mixed before delivery to the nickel part, nickel-plated or nickel-coated part, the process can be limited because the concentration of the fluorine effluent can be reduced, thereby further protecting the polysilicon features at the substrate level.

The flared portion 246 may provide an outlet for the precursor delivered through the second end 237 through the mixing manifold 235 via the outlet 247. The section of the central passage 238 that passes through the mixing manifold 235 may be configured to provide sufficient or thorough mixing of the precursor delivered to the mixing manifold before the mixed precursor is provided into the chamber 205. Unlike traditional techniques, by performing etchant or precursor mixing before delivery to the chamber, the present system can provide an etchant with uniform properties before the etchant is distributed around the chamber and the substrate. In addition, by providing multi-stage mixing, more uniform mixing can be provided for each precursor. In this way, the process performed with the present technology can have more uniform results on the substrate surface. The illustrated component stack can also limit particle accumulation by reducing the number of elastomer seals included in the stack, which can degrade over time and produce particles that can affect the processing being performed.

The chamber 205 may include a plurality of components arranged in a stack. The chamber stack may include a gas box 250, a zone partition 260, a panel 270, an optional ion suppression element 280, and a cover spacer 290. These components can be used to distribute a precursor or a set of precursors through the chamber to provide uniform delivery of etchant or other precursors to the substrate for processing. In an embodiment, these components may be stacked plates, each plate at least partially defining the exterior of the chamber 205.

The gas box 250 may define a chamber inlet 252. The central passage 254 may be defined through the gas box 250 to transport the precursor into the chamber 205. The inlet 252 may be aligned with the outlet 247 of the mixing manifold 235. In embodiments, the inlet 252 and/or the central passage 254 may be characterized by similar diameters. The central passage 254 may extend through the gas tank 250 and be configured to transport one or more precursors into the volume 257 defined by the gas tank 250 from above. The gas box 250 may include a first surface 253, such as a top surface, and a second surface 255 opposite to the first surface 253, such as a bottom surface of the gas box 250. In an embodiment, the top surface 253 may be a flat or substantially flat surface. The heater 248 may be coupled with the top surface 253.

In an embodiment, the heater 248 may be configured to heat the chamber 205, and may conductively heat each cover stack component. The heater 248 may be any type of heater, including fluid heaters, electric heaters, microwave heaters, or other devices configured to conduct heat transfer to the chamber 205. In some embodiments, the heater 248 may be or include an electric heater formed in a circular pattern around the first surface 253 of the gas box 250. The heater may be defined as spanning the gas box 250 and surrounding the mixing manifold 235. The heater may be a plate heater or a resistive element heater, the heater may be configured to provide up to, about, or greater than about 2,000 W of heat, and may be configured to provide greater than or about 2,500 W, Heat greater than or about 3,000 W, greater than or about 3,500 W, greater than or about 4,000 W, greater than or about 4,500 W, greater than or about 5,000 W, or greater.

In an embodiment, the heater 248 may be configured to generate a variable chamber component temperature of up to, about, or greater than about 50°C, and may be configured to generate a temperature greater than or about 75°C, greater than or about The temperature of the chamber components is 100°C, greater than or about 150°C, greater than or about 200°C, greater than or about 250°C, greater than or about 300°C, or higher. The heater 248 may be configured to heat individual components (such as the ion suppression element 280) to any of these temperatures in order to facilitate processing operations, such as annealing. In some processing operations, the substrate may be raised toward the ion suppression element 280 for annealing operations, and the heater 248 may be adjusted to conductively increase the temperature of the heater to any specific temperature described above, or within any temperature range, Or between any of the stated temperatures.

The second surface 255 of the gas box 250 may be coupled with the zone partition 260. The partition 260 may be characterized as having a diameter equal to or similar to the diameter of the gas box 250. The partition 260 may define a plurality of holes 263 through the partition 260, only a sample of the holes 263 is shown, which may allow the distribution of precursors (such as etchant) from the volume 257 and may begin to distribute through The precursor of the chamber 205 is used for uniform delivery to the substrate. Although only a few holes 263 are shown, it should be understood that the partition 260 may have any number of holes 263 defined through the structure. The zone divider 260 may be characterized as a rising annular section 265 at the outer diameter of the zone divider 260 and a descending annular section 266 at the outer diameter of the zone divider 260. In an embodiment, the rising annular section 265 may provide structural rigidity to the zone partition 260, and may define the side or outer diameter of the volume 257. The partition 260 may also define the bottom of the volume 257 from below. The volume 257 may allow the precursor to be distributed from the central channel 254 of the gas box 250 before the precursor passes through the hole 263 of the partition 260. In an embodiment, the lowered annular section 266 may also provide structural rigidity to the zone divider 260 and may define the side or outer diameter of the second volume 258. The partition 260 may also define the top of the volume 258 from above, and the bottom of the volume 258 may be defined by the panel 270 from below.

The panel 270 may include a first surface 272 and a second surface 274 opposite to the first surface 272. The panel 270 may be coupled with the zone divider 260 at a first surface 272 that may engage the lowered annular section 266 of the zone divider 260. The panel 270 may define a flange 273 at the interior of the second surface 274 that extends to a third volume 275 at least partially defined within or by the panel 270. For example, the panel 270 may define the side or outer diameter of the third volume 275 from above and the top of the volume 275, and the ion suppression element 280 may define the third volume 275 from below. The panel 270 may define multiple channels through the panel, although not shown in FIG. 2.

The ion suppression element 280 may be positioned close to the second surface 274 of the panel 270 and may be coupled with the panel 270 at the second surface 274. The ion suppression element 280 may be configured to reduce ion migration into the processing area of the chamber 205 containing the substrate. The ion suppression element 280 may define a plurality of holes through the structure, although not shown in FIG. 2. In an embodiment, the gas box 250, the zone partition 260, the panel 270, and the ion suppression element 280 may be coupled together, and in the embodiment may be directly coupled together. By directly coupling the components, the heat generated by the heater 248 can be conducted through the components to maintain a specific chamber temperature, which can be maintained with small variations between the components. The ion suppression element 280 may also contact the cover spacer 290, and the ion suppression element 280 together with the cover spacer 290 may at least partially define a plasma processing area in which the substrate is maintained during processing.

Figure 3 shows a schematic partial bottom plan view of an isolator 215 according to some embodiments of the present technology. As previously mentioned, the separator 215 may define a plurality of holes 214 that extend from the central passage 213 to the second end 212 of the separator 215. The holes 214 may be distributed around the central axis passing through the separator 215 and may be distributed equidistantly from the central axis passing through the separator 215. The isolator 215 may define any number of holes 214, which may increase the movement, distribution, and/or turbulence of the precursor flowing through the isolator 215.

FIG. 4 shows a schematic partial top plan view of the adapter 220 according to an embodiment of the present technology. As previously mentioned, the first central channel 219 may extend from the first end 217 of the adapter 220 and may extend partially through the adapter. The adapter may define a floor of the central channel, which may have a cylindrical profile and may transition to a plurality of holes 225 extending through the adapter toward the second end, as described above. Similar to the holes 214, the holes 225 may be distributed around a central axis passing through the adapter 220, and may be located equidistantly around the central axis. The adapter 220 may define any number of holes through the adapter, and in some embodiments may define more holes than in the isolator 215. Additional holes can increase mixing with added precursors. As mentioned above, the mixing channel can deliver additional precursors toward the first end of the adapter and into the first central channel 219. In this embodiment, the views of Figures 4 and 5 will be reversed.

FIG. 5 shows a schematic cross-sectional view of the adapter 220 passing through the line AA of FIG. 2 according to some embodiments of the present technology. FIG. 5 may show a view through the second central channel 221, which may show the exit through the second portion 226 described previously to the mixing channel. As shown, the second portion 226 may extend between the holes 225 and may extend along the central axis of the adapter 220 toward the second end of the adapter. In addition, as described above, in the embodiment where the second portion 226 extends toward the first central channel 219, the views of FIGS. 4 and 5 should be reversed, and the mixed precursors from the remote plasma unit and the adapter 220 The precursor introduced in the port in the middle will leave the hole 225 after premixing.

Figure 6 shows a schematic perspective view of a mixing manifold 235 according to some embodiments of the present technology. As previously mentioned, the mixing manifold 235 can define a central channel 238 through the mixing manifold, which can transport the mixed precursor from the adapter to the processing chamber. The mixing manifold 235 may also include a number of features that allow the introduction of additional precursors that can be mixed with previously mixed precursors. As previously mentioned, one or more ports 239 may provide a passage for introducing precursors into the mixing manifold 235. The port 239 may lead to a channel as shown in FIG. 2, which may extend into one or more grooves defined in the first surface 236 of the mixing manifold 235.

A groove may be defined in the first surface 236 of the mixing manifold 235, which groove may form an at least partially isolated channel when the mixing manifold is coupled with the spacer 230 previously discussed. The first groove 240 may be formed around the central channel 238. The first groove 240 may be annular in shape and may be characterized by an inner radius and an outer radius passing through the mixing manifold 235 from the central axis. The inner radius may be defined by the first inner side wall 605 which may define the top portion of the central channel 238 extending through the mixing manifold 235. The outer radius of the first groove 240 may be defined by the first outer side wall 610, and the first outer side wall 610 may be located radially outside of the first inner side wall 605. The first groove 240 may provide a fluid passage through the first inner side wall 605 to the central channel 238. For example, the first inner side wall 605 may define a plurality of holes 606 through the first inner side wall 605. The holes 606 may be distributed around the first inner side wall 605 to provide multiple access locations to deliver additional precursors into the central channel 238.

The first inner sidewall 605 may be characterized by a surface inclined or chamfered from the first surface 236 toward the first groove 240. In an embodiment, a chamfered profile can be formed that can maintain at least a portion of the first inner sidewall 605 along the first surface 236 that can be used for coupling with the spacer 230 previously discussed. The chamfering can also provide further lateral spacing to prevent leakage on the first surface between the first groove 240 and the central channel 238. The hole 606 may be defined as passing through the chamfered portion, and may be defined as being at an angle, such as at a right angle to the plane of the chamfered portion, or passing through the first inner side wall 605 at some other angle.

The mixing manifold 235 may define a second groove 241 formed radially outward from the first groove 240. In some embodiments, the second groove 241 may also be annular, and the central channel 238, the first groove 240, and the second groove 241 may be concentrically aligned around a central axis passing through the mixing manifold 235. The second groove 241 may be fluidly coupled to the port 239 via the passage 243 described previously. The channel 243 can extend to one or more positions in the second groove 241, and can pass into the second groove 241 from the base of the groove, but in other embodiments, the channel 243 can also pass through the sidewall of the groove.入槽241。 Into the groove 241. By passing from below the second groove 241, the depth of the second groove 241 can be minimized, which can reduce the volume of the formed channel, and can limit the diffusion of the delivered precursor to increase the uniformity of delivery .

The second groove 241 may be defined between the first outer side wall 610 and an outer radius, and the first outer side wall 610 may instead be a second inner side wall, and the outer radius is defined by the main body of the mixing manifold 235. In an embodiment, the first outer sidewall 610 may define each of the first groove 240 and the second groove 241 along the first surface 236 of the mixing manifold 235. The first outer side wall 610 may be characterized by an inclined or chamfered profile along the first surface 236 on the side of the first outer side wall close to the second groove 241, which is similar to the profile of the first inner side wall 605. The first outer side wall 610 may also define a plurality of holes 608 defined through the wall to provide a fluid passage between the second groove 241 and the first groove 240. The hole 608 may be defined at any position along the first outer side wall 610 or through the first outer side wall 610, and may be defined through the chamfered portion, similar to the hole through the first inner side wall 605. Therefore, the precursor delivered through the port 239 can flow into the second groove 241, can enter the first groove 240 through the hole 608, and can enter the central channel 238 through the hole 606, and the precursor can be transported with the adapter 220 The precursors are mixed in the central channel 238.

The holes 608 may include any number of holes defined through the first outer side wall 610, and the holes 606 may include any number of holes defined through the first inner side wall 605. In some embodiments, the number of holes through each wall may not be equal. For example, in some embodiments, the number of holes 606 passing through the first inner side wall 605 may be greater than the number of holes 608 passing through the first outer side wall, and in some embodiments, the number of holes 606 may be less than the number of holes 608. Twice the number or more. In addition, the holes 608 may be radially offset from the holes 606 so that no holes 608 are aligned with any holes 606 through a radius extending from the central axis of the mixing manifold 235. This hole and channel design can provide recursive flow through the mixing manifold, thereby improving the delivery of additional precursors into the central channel 238, and can provide more uniform delivery through each hole 606. The mixing manifold 235 may also define an additional groove 615, which may be radially outside of the second groove 241, and may be configured to receive an elastomeric element or an o-ring.

Figure 7 shows a schematic cross-sectional view of the mixing manifold 235 through the line BB of Figure 6 according to some embodiments of the present technology. The cross section shows the holes 608 as they are defined through the first outer sidewall 610 to provide a fluid passage from the second groove 241 to the first groove 240. In addition, Figure 7 shows some embodiments in which the holes 608 are spaced apart from each other by a full diameter through the first outer sidewall. The holes 608 are also approximately spaced apart so that the ports 239 are equally spaced between the two holes 608. The previously described channel 243 can enter the second groove 241 at a similar location to have an equal or substantially equal distance from each hole 608.

FIG. 8 shows a schematic cross-sectional view of the mixing manifold 235 through the line CC of FIG. 6 according to some embodiments of the present technology. The cross-section shows the holes 606 as they define through the first inner side wall 605 to provide a fluid passage from the first groove 240 to the central channel 238. The hole 606 and the hole 608 may respectively extend through the chamfered portions of the first inner side wall and the first outer side wall, and may extend at an angle perpendicular to the chamfer angle, or at some other inclined angle. By including an angle of inclination through features (such as the first outer sidewall 610), the transport can provide for further distribution of the flow of the precursor before it rises to flow through the next set of holes. This may also limit the processing effect of forming holes, or otherwise damage the first surface 236. The mixing manifold 235 may provide a design that provides a more uniform mixing of the precursors with one or more precursors extending through the central passage 238.

Figure 9 illustrates the operation of a method 900 of delivering precursors through a processing chamber according to some embodiments of the present technology. The method 900 can be performed in the system 200 and can allow for improved mixing of precursors outside the chamber while protecting the components from etchant damage. Although the components of the chamber can be exposed to etchant that can cause wear over time, the present technology can limit these components to components that can be replaced and repaired more easily. For example, the present technology can limit the exposure of internal components of the remote plasma unit, which can allow specific protection to be applied to the remote plasma unit.

The method 900 may include forming a remote plasma of a fluorine-containing precursor in operation 905. The precursor can be delivered to the remote plasma unit to be dissociated to generate plasma effluent. In embodiments, the remote plasma cell may be coated or lined with oxide or other materials that can withstand contact with fluorine-containing effluents. In embodiments, apart from the carrier gas, no other etchant precursors can be transported through the remote plasma unit, which can protect the unit from damage and allow adjustment of plasma power/power to provide specific dissociation of the precursor , Because this can be beneficial to the specific processing being performed. Other embodiments configured to generate plasma effluents of different etchants may be lined with different materials, which may be inert to the precursor or combination of precursors.

At operation 910, the plasma effluent of the fluorine-containing precursor may be allowed to flow into the adapter coupled to the remote plasma unit. At operation 915, the hydrogen-containing precursor can be streamed into the adapter. The adapter may be configured to provide mixing of the fluorine-containing precursor and the hydrogen-containing precursor within the adapter to produce a first mixture at operation 920. At operation 925, the first mixture may flow from the adapter into the mixing manifold. At operation 930, the third precursor may be streamed into the mixing manifold. The third precursor may include additional hydrogen-containing precursors, additional halogen-containing precursors, or other combinations of precursors. The mixing manifold may be configured to perform a second mixing stage of the third precursor and the first mixture, which may produce a second mixture 935.

Subsequently, a second mixture including all three precursors can be delivered from the mixing manifold to the semiconductor processing chamber. As mentioned earlier, additional components described elsewhere can be used to control the delivery and distribution of etchant. It should be understood that the identified precursors are only examples of suitable precursors for use in the chamber. The chambers and materials discussed throughout this disclosure can be used for any number of other processing operations that can benefit from separating the precursors and mixing them before delivering them into the processing chamber.

In the foregoing description, for the purpose of explanation, many details have been set forth to provide an understanding of various embodiments of the present technology. However, it will be obvious to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

Several embodiments have been disclosed, but those skilled in the art will recognize that various modifications, alternative constructions and equivalents can be used without departing from the spirit of the embodiments. In addition, many well-known processes and components have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be regarded as limiting the scope of the present technology.

In the case of providing a range of values, it should be understood that unless the context clearly dictates otherwise, each intermediate value between the upper limit and the lower limit of the range, to the minimum score of the lower limit unit, is also specifically disclosed. Any specified value or unspecified intermediate value contained within the specified range and any other specified value or intermediate value within the specified range is any narrower range. The upper and lower limits of these smaller ranges can be independently included or excluded in the range, and wherein the smaller range includes one of the upper and lower limits, excluding the upper and lower limits, and each range in which both the upper and lower limits are included It is also included in the present technology, subject to any specifically excluded limit in the stated range. In the case where the range includes one or two of the limit values, it also includes a range excluding any one or two of the included limit values.

As used herein and in the scope of the appended application, the singular forms "a", "an" and "the" include multiple referents unless the context clearly dictates otherwise. Thus, for example, reference to "a layer" includes multiple such layers, and reference to "the precursor" includes reference to one or more precursors and their equivalents known to those skilled in the art, and so on.

In addition, when used in this specification and the scope of the following patent applications, the words "including", "containing", "containing" and "including" are intended to indicate the existence of the described features, integers, components or operations, but they do not exclude One or more other features, integers, components, operations, actions, or groups are present or added.

100: processing system 102: Front opening wafer transfer box 104: Robotic Arm 106: keep area 110: The second robotic arm 200: exemplary processing system 205: processing chamber 210: Remote Plasma Unit 211: first end 212: second end 213: Channel 214: Hole 215: Isolator 217: first end 218: second end 219: Central Passage 220: Adapter 221: Second Central Passage 222: Port 223: Mixed channel 224: Part One 225: hole 226: Part Two 226a: part two 226b: Part Two 227: groove 228: groove 230: spacer 232: central hole 235: Mixing Manifold 236: first end 237: second end 238: Central Passage 239: Port 240: first groove 241: second groove 242: Part One 243: Channel 246: Flaring Section 247: Exit 248: heater 250: gas tank 252: Chamber entrance 253: First Surface 254: Central Passage 255: second surface 257: Volume 258: Volume 260: District partition 263: Hole 265: ascending loop section 266: Descending Loop Section 270: Panel 272: First Surface 273: Flange 274: Second Surface 275: third volume 280: Ion suppression element 290: cover spacer 605: first inner wall 606: hole 608: hole 610: first outer wall 615: groove 900: method 905~935: Operation 108a~f: substrate processing chamber 109a~c: series section 226a~b: Part Two

A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the rest of the specification and the accompanying drawings.

Figure 1 shows a top plan view of an exemplary processing system according to some embodiments of the technology.

Figure 2 shows a schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology.

Figure 3 shows a schematic partial bottom plan view of an isolator according to some embodiments of the present technology.

Figure 4 shows a schematic partial top plan view of an adapter according to some embodiments of the present technology.

Figure 5 shows a schematic cross-sectional view of the adapter passing through the line A-A of Figure 2 according to some embodiments of the present technology.

Figure 6 shows a schematic perspective view of a mixing manifold according to some embodiments of the present technology.

Figure 7 shows a schematic cross-sectional view of the mixing manifold through the line B-B of Figure 6 according to some embodiments of the present technology.

Figure 8 shows a schematic cross-sectional view of the mixing manifold through the line C-C of Figure 6 according to some embodiments of the present technology.

Figure 9 illustrates the operation of a method of delivering precursors through a processing system according to some embodiments of the present technology.

Several of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes only and should not be considered to be proportional unless specifically stated to be proportional. In addition, as a schematic diagram, the drawings are provided to help understanding, and the drawings may not include all aspects or information compared with the real representation, and may include exaggerated materials for illustrative purposes.

In the drawings, similar components and/or features may have the same reference signs. In addition, various parts of the same type can be distinguished by making reference signs followed by letters distinguishing similar parts. If only the first reference number is used in the description, the description is applicable to any one similar component having the same first reference number, regardless of the letter.

200: exemplary processing system

205: processing chamber

210: Remote Plasma Unit

211: first end

212: second end

213: Channel

214: Hole

215: Isolator

217: first end

218: second end

219: Central Passage

220: Adapter

221: Second Central Passage

222: Port

223: Mixed channel

224: Part One

225: hole

226a: part two

226b: Part Two

227: groove

228: groove

230: spacer

232: central hole

235: Mixing Manifold

236: first end

237: second end

238: Central Passage

239: Port

240: first groove

241: second groove

242: Part One

243: Channel

246: Flaring Section

247: Exit

248: heater

250: gas tank

252: Chamber entrance

253: First Surface

254: Central Passage

255: second surface

257: Volume

258: Volume

260: District partition

263: Hole

265: ascending loop section

266: Descending Loop Section

270: Panel

272: First Surface

273: Flange

274: Second Surface

275: third volume

280: Ion suppression element

290: cover spacer

Claims (20)

A semiconductor processing system component including: A mixing manifold characterized by a first end and a second end opposite to the first end, wherein the mixing manifold defines a central passage through the mixing manifold, wherein the mixing The manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first groove defined in the first end of the mixing manifold, wherein the first groove is formed by a first groove An inner radius and an outer radius at an inner side wall are characterized, and wherein the first groove provides a fluid passage through the first inner side wall to the central channel. The semiconductor processing system component according to claim 1, wherein the mixing manifold further includes a second groove defined in the first end of the mixing manifold, wherein the second groove is positioned in the first The radially outer side of the groove, and wherein the port is fluidly coupled with the second groove. The semiconductor processing system component of claim 2, wherein the second trench is characterized by an inner radius at a second inner sidewall, and wherein the second inner sidewall further defines the outer radius of the first trench. The semiconductor processing system component of claim 3, wherein the second inner side wall defines a plurality of holes, the plurality of holes are defined to pass through the second inner side wall and provide a fluid path to the first trench. The semiconductor processing system component of claim 4, wherein the second inner sidewall defines two holes passing through the second inner sidewall. The semiconductor processing system component according to claim 5, wherein the first inner side wall defines a plurality of holes, the plurality of holes are defined to pass through the first inner side wall, and wherein the plurality of holes are defined to pass through the second inner side wall Each hole of the plurality of holes is offset radially from each hole of the plurality of holes defined to pass through the first inner side wall. The semiconductor processing system component according to claim 5, wherein the two holes are defined to pass through the second inner side wall at opposite ends of a diameter passing through the second inner side wall. The semiconductor processing system component according to claim 7, wherein the port is equidistantly defined between the two holes defined to pass through the second inner side wall. The semiconductor processing system component of claim 1, wherein the first inner side wall defines a plurality of holes, and the plurality of holes are defined as a fluid passage through the first inner side wall and provided to the central channel. The semiconductor processing system component according to claim 9, wherein at least three holes are defined to pass through the first inner side wall, and wherein the holes are equally spaced around the first inner side wall. The semiconductor processing system component according to claim 9, wherein the first inner side wall includes a chamfered edge from the first end of the mixing manifold. The semiconductor processing system component of claim 11, wherein the plurality of holes are defined as passing through the chamfered edge of the first inner side wall. The semiconductor processing system component of claim 12, wherein the plurality of holes are defined to pass at an angle through the first inner side wall extending in a direction from the first end of the mixing manifold to the central passage . The semiconductor processing system component according to claim 1, wherein the mixing manifold contains nickel. The semiconductor processing system component according to claim 14, wherein the nickel is nickel-plated. A semiconductor processing system component including: A mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central passage through the mixing manifold, wherein the mixing The manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled to a first groove defined in the first end of the mixing manifold, wherein the first groove is formed by a first groove An inner radius and an outer radius at an inner side wall are characterized, wherein the first groove provides a fluid passage through the first inner side wall to the central channel, and wherein the mixing manifold further includes a mixing manifold defined in the mixing manifold A second groove in the first end, wherein the second groove is positioned radially outside of the first groove, and wherein the port is fluidly coupled to the second groove. The semiconductor processing system component of claim 16, wherein the second trench is characterized by an inner radius at a second inner side wall, and wherein the second inner side wall further defines the outer radius of the first trench. The semiconductor processing system component of claim 17, wherein the second inner sidewall defines a plurality of holes, the plurality of holes are defined through the second inner sidewall and provide a fluid path to the first trench. The semiconductor processing system component of claim 18, wherein the second inner side wall defines two holes passing through the second inner side wall, and wherein the first inner side wall defines a plurality of holes defined through the first inner side wall A hole, and each hole of the plurality of holes defined through the second inner side wall is offset from each hole of the plurality of holes defined through the first inner side wall. A semiconductor processing system component including: A mixing manifold characterized by a first end and a second end opposite the first end, wherein the mixing manifold defines a central passage through the mixing manifold, wherein the mixing The manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled to a first groove defined in the first end of the mixing manifold, wherein the first groove is formed by a first groove An inner radius and an outer radius at an inner side wall are characterized, wherein the first groove provides a fluid passage through the first inner side wall to the central channel, and wherein the first inner side wall defines a passage defined through the first inner side wall And provide a fluid passage to the central channel, and at least three of the holes are defined to pass through the first inner side wall, and wherein the holes are equally spaced around the first inner side wall.

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