TWM594798U - Semiconductor processing system - Google Patents

Abstract

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Description

Semiconductor processing system

This technology involves semiconductor systems, processes and equipment. More specifically, the present technology relates to systems and methods for delivering precursors within systems and chambers.

Integrated circuits are made possible by the process of producing complex patterned material layers on the substrate surface. The production of patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for various purposes, including transferring the pattern in the photoresist to the underlying layer, thinning the layer, or thinning the lateral dimensions of features already present on the surface. It is generally desirable to have an etching process that etches one material faster than another to facilitate, for example, a pattern transfer process or separate material removal. It is said that this etching process is selective to the first material. Due to the diversity of materials, circuits and processes, etch processes with selective selectivity to various materials have been developed.

The etching process may be referred to as wet or dry based on the materials used in the process. Wet HF etching preferentially removes silicon oxide over other dielectrics and materials. However, the wet process may have difficulty penetrating some constrained trenches, and may sometimes deform the remaining material. The dry etching process can penetrate complex features and trenches, but may not provide an acceptable top-to-bottom profile. As the size of components continues to shrink in next-generation components, the way the system transports precursors into and through the chamber may have an increasing impact. As the importance of uniformity of processing conditions continues to increase, chamber design and system settings may play an important role in the quality of the components produced.

Therefore, there is a need for improved systems and methods that can be used to produce high-quality components and structures. This technology addresses these and other needs.

An exemplary semiconductor processing system may include a processing chamber, and may include a remote plasma unit coupled to the processing chamber. The exemplary system may also include a mixing manifold coupled between the distal plasma unit and the processing chamber. The mixing manifold is characterized by a first end and a second end opposite the first end, and may be coupled to the processing chamber at the second end. The mixing manifold may define a central passage through the mixing manifold, and may define ports along the exterior of the mixing manifold. The port may be fluidly coupled with the first groove defined in the first end of the mixing manifold. The first groove may be characterized by an inner radius and an outer radius at the first inner side wall, and the first groove may provide a fluid path through the first inner side wall to the central channel.

In some embodiments, the mixing manifold may further include a second groove defined within the first end of the mixing manifold. The second groove may be positioned radially outside the first groove, and the port may be fluidly coupled with the second groove. The second trench may be characterized by an inner radius at the second inner sidewall. The second inner sidewall may also define the outer radius of the first trench. The second inner sidewall may define a plurality of holes that are defined through the second inner sidewall and provide a fluid pathway to the first trench. The first inner sidewall may define a plurality of holes that are defined through the first inner sidewall and provide a fluid passage to the central channel. Each hole in the plurality of holes defined through the second inner side wall may deviate from each hole diameter in the plurality of holes defined through the first inner side wall.

The system may also include an isolator coupled between the mixing manifold and the distal plasma unit. The isolator may be ceramic or contain ceramic. The system may also include an adapter coupled between the mixing manifold and the distal plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel that extends partially through the adapter. The adapter may define an external port that passes through the adapter. The port may be fluidly coupled with the mixing channel defined in the adapter. The mixing channel may be fluidly coupled with the central channel. The adapter may contain oxide on the inner surface of the adapter. The system may also include a spacer between the adapter and the mixing manifold.

The technology can also cover semiconductor processing systems. The system may include a remote plasma unit. The system may include a processing chamber, and the processing chamber may include a gas box defining a central passage. The system may include a zone partition coupled to the gas tank. The zone partition may define a plurality of holes through the zone partition. The system may include a panel that is coupled to the zone partition at the first surface of the panel. The system may also include a mixing manifold coupled to the gas tank. The mixing manifold may be characterized by a first end and a second end opposite the first end. The mixing manifold may be coupled to the processing chamber at the second end. The mixing manifold may define a central passage through the mixing manifold that is fluidly coupled with the central passage defined through the gas tank. The mixing manifold may define a port along the exterior of the mixing manifold. The port may be fluidly coupled with the first groove defined in the first end of the mixing manifold. The first trench may be characterized by an inner radius at the first inner sidewall and an outer radius. The first groove may provide a fluid path through the first inner sidewall to the central channel.

In some embodiments, the system may further include a heater externally coupled to the gas tank around the mixing manifold coupled to the gas tank. The mixing manifold may be nickel or contain nickel. The system may include an adapter coupled to the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel that extends partially from the first end of the adapter through the adapter to the midpoint of the adapter. The adapter may define a plurality of access channels extending from the midpoint of the adapter to the second end of the adapter. The plurality of access channels may be distributed radially around a central axis passing through the adapter. The adapter may define an external port that passes through the adapter. The port may be fluidly coupled with the mixing channel defined in the adapter. The mixing channel may extend through the center portion of the adapter toward the second end of the adapter. The adapter may define an external port that passes through the adapter. The port may be fluidly coupled with the mixing channel defined in the adapter. The mixing channel may extend through the central portion of the adapter toward the midpoint of the adapter to fluidly enter the central channel defined by the adapter.

The technology may also cover the method of transferring precursors through a semiconductor processing system. The method may include forming a plasma of a fluorine-containing precursor in a remote plasma unit. The method may include flowing the plasma effluent of the fluorine-containing precursor into the adapter. The method may include flowing a hydrogen-containing precursor into the adapter. The method may include mixing the hydrogen-containing precursor with the plasma effluent to produce a first mixture. The method may include flowing the first mixture into the mixing manifold. The method may include flowing a third precursor into the mixing manifold. The method may include mixing the third precursor with the first mixture to produce a second mixture. The method may further include flowing the second mixture into the processing chamber.

Such technologies can provide many benefits over conventional systems and technologies. For example, this technology can utilize a limited number of components compared to traditional designs. In addition, by using components that generate an etchant substance outside the chamber, mixing and transport to the substrate can be provided more uniformly on conventional systems. These and other embodiments and many of their advantages and features are described in more detail in conjunction with the following description and drawings.

The technology includes semiconductor processing systems, chambers, and components for performing semiconductor manufacturing operations. Many dry etching operations performed during semiconductor manufacturing may involve multiple precursors. When excited and combined in various ways, these etchants can be delivered to the substrate to remove or modify various aspects of the substrate. Conventional processing systems can provide precursors in various ways, such as for deposition or etching. One method of providing enhanced precursors is to provide all precursors through the remote plasma unit before transporting the precursors through the processing chamber and to the substrate (eg, wafer) for processing. However, the problem with the process is that different precursors may react with different materials, which may cause damage to the remote plasma unit or the components that deliver the precursor. For example, the enhanced fluorine-containing precursor may react with the aluminum surface, but may not react with the oxide surface. The enhanced hydrogen-containing precursor may not react with the aluminum surface in the remote plasma unit, but may react with the oxide coating and remove the oxide coating. Therefore, if two precursors are delivered together through a remote plasma unit, they may damage the coating or lining within the unit. In addition, the electricity/power that ignites the plasma may affect the process being performed by the amount of dissociation generated. For example, in some processes, large amounts of dissociation of hydrogen-containing precursors may be beneficial, but lower amounts of dissociation of fluorine-containing precursors may allow for more controlled etching.

Conventional processing can also deliver a precursor through a remote plasma device for plasma processing, and can deliver the second precursor directly into the chamber. However, the problem with this process is that the mixing of precursors may be difficult, may not provide sufficient control of the etchant production, and may not provide a uniform etchant on the wafer or substrate. This may result in failure to perform the process uniformly on the substrate surface, which may cause component problems as patterning and formation continue.

The present technology can overcome these problems by using components and systems that are configured to mix the precursors before delivering the precursors into the chamber, while only one etchant precursor is delivered through A remote plasma unit, but multiple precursors (such as carrier gas or other etchant precursors) can also flow through the remote plasma unit. A specific bypass scheme can completely mix the precursors before delivering the precursors to the processing chamber, and can provide intermediate mixing as each precursor is added to the system. This can allow a uniform process to be performed while protecting the remote plasma unit. The chamber of the present technology may also include a component configuration that maximizes the thermal conductivity through the chamber and increases the convenience of maintenance by coupling the components in a specific manner.

Although the remaining disclosure will routinely identify specific etching processes that utilize the disclosed technology, it will be readily understood that the system and method are equally applicable to deposition and cleaning processes that may occur in the chamber. Therefore, the technique should not be considered limited to the etching process. Before describing the aspects and variations of the components of the system according to embodiments of the technology, the present disclosure will discuss a possible system and chamber that can be used with the technology to perform certain removal operations.

FIG. 1 shows a top plan view of one embodiment of a processing system 100 having a deposition chamber, an etching chamber, a baking chamber, and a curing chamber according to an embodiment. In this figure, a pair of front opening unified pods (FOUP) 102 supply substrates of various sizes, which are received by a robot arm 104 and placed in a low-pressure holding area 106, and then placed Into one of the substrate processing chambers 108a-f positioned in the series sections 109a-c. The second robotic arm 110 may be used to transfer and return substrate wafers from the holding area 106 to the substrate processing chambers 108a-f. In addition to loop layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation and other substrate processes, each substrate The processing chambers 108a-f may also be equipped to perform a variety of substrate processing operations, including the dry etching process described herein.

The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and/or etching the dielectric film on the substrate wafer. In one configuration, two pairs of processing chambers (eg 108c-d and 108e-f) can be used to deposit dielectric materials on the substrate, and a third pair of processing chambers (eg 108a-b) can be used to etch the deposited dielectric quality. In another configuration, all three pairs of chambers (eg, 108a-f) can be configured to etch the dielectric film on the substrate. Any one or more of the described processes may be performed in a chamber(s) separate from the manufacturing system shown in different embodiments. It should be understood that additional configurations for the deposition, etching, annealing, and curing chambers of the dielectric film are considered by the system 100.

FIG 2 shows a schematic sectional view processing 200 according to an exemplary embodiment of the system according to the present technology. The system 200 may include a processing chamber 205 and a remote plasma unit 210. The distal plasma unit 210 may be coupled with the processing chamber 205 having one or more components. The distal plasma unit 210 may be coupled to one or more of the isolator 215, the adapter 220, the spacer 230, and the mixing manifold 235. The mixing manifold 235 may be coupled to the top of the processing chamber 205 and may be coupled to the inlet of the processing chamber 205.

The isolator 215 may be coupled to the distal plasma unit 210 at the first end 211 and may be coupled to the adapter 220 at the second end 212 opposite to the first end 211. One or more channels can be defined by the isolator 215. An opening or port to the channel 213 may be defined at the first end 211. The channel 213 may be centrally defined within the isolator 215, and may be characterized by a first cross-sectional surface area in a direction perpendicular to the central axis passing through the isolator 215, which may be from the distal plasma The direction of the flow of the unit 210. The diameter of the channel 213 may be equal to or the same as the outlet from the distal plasma unit 210. The channel 213 may be characterized by the length from the first end 211 to the second end 212. The channel 213 may extend through the entire length of the isolator 215 or through a length less than the length from the first end 211 to the second end 212. For example, the channel 213 may extend less than half the length from the first end 211 to the second end 212, the channel 213 may extend halfway the length from the first end 211 to the second end 212, and the channel 213 may extend beyond The length from the first end 211 to the second end 212, or the channel 213 may extend from the first end 211 of the isolator 215 to about half the length of the second end 212.

The channel 213 may transition to a smaller hole 214 that extends from the base of the channel 213 defined within the isolator 215 through the second end 212. For example, one such smaller hole 214 is shown in FIG. 2, but it should be understood that any number of holes 214 may be defined from the channel 213 through the isolator 215 to the second end 212. Smaller holes may be distributed around the central axis of the isolator 215, as will be discussed further below. The smaller hole 214 may be characterized by a diameter less than or about 50% of the diameter of the channel 213, and may be characterized by a diameter less than or about 40% of the diameter of the channel 213, less than or about 30% of the diameter of the channel 213, less than or about 20% of the diameter of the channel 213, less than or about 10% of the diameter of the channel 213, less than or about 5% of the diameter of the channel 213, or less. The isolator 215 may also define one or more trenches defined below the isolator 215. The groove may be or include one or more annular grooves defined in the isolator 215 to allow seating of o-rings or elastomeric elements, which may allow coupling with the adapter 220.

Although the other components of the processing system may be metal or a thermally conductive material, the isolator 215 may be a material with a lower thermal conductivity. In some embodiments, the isolator 215 may be or include ceramic, plastic, or other thermally insulated components configured to provide thermal isolation between the distal plasma unit 210 and the chamber 205. During operation, the remote plasma unit 210 may be cooled relative to the chamber 205 or operated at a lower temperature, while the chamber 205 may be heated relative to the remote plasma unit 210 or operated at a higher temperature. The provision of ceramic or adiabatic isolators 215 can prevent or limit thermal, electrical or other interference between components.

In an embodiment, the adapter 220 may be coupled with the second end 212 of the isolator 215. The adapter 220 may be characterized by a first end 217 and a second end 218 opposite the first end 217. The adapter 220 may define one or more central passages through portions of the adapter 220. For example, the central channel 219 or the first central channel may extend from the first end 217 at least partially through the adapter 220 toward the second end 218, and may extend through the adapter 220 of any length. Similar to the central channel 213 of the isolator 215, the central channel 219 may extend through the adapter 220 less than half the length of the adapter 220, may extend about half the length of the adapter 220, or may extend beyond the adapter 220 Half the length. The central channel 219 may be characterized by a diameter, which may be related to the diameter of the channel 213, equal to or substantially equal to the diameter of the channel 213. In addition, the central channel 219 may be characterized by the diameter of the hole 214 surrounding the isolator 215 and in an embodiment precisely the shape of the hole 214, such as by being substantially similar or equivalent to being defined as passing through the isolator from the central axis The radius of 215 extends to the radius of the outer edge of the diameter of each hole 214. For example, the central channel 219 may be characterized by a circle or oval, which is characterized by one or more diameters that may extend tangentially to the outer portion of each hole 214.

The adapter 220 may define a base of the central channel 219 within the adapter 220, which may define a transition from the central channel 219 to a plurality of holes 225, which may extend at least partially through the adapter 220 . The transition can occur at a midpoint through the adapter, which can be anywhere along the length of the adapter. For example, the hole 225 may extend from the base of the central channel 219 toward the second end 218 of the adapter 220 and may extend completely through the second end 218. In other embodiments, the hole 225 may extend from the first end into the central channel 219 through the middle portion of the adapter 220 to the second end into the second central channel 221, which may be It extends through the second end 218 of the adapter 220. The central channel 221 may be characterized by a diameter similar to that of the central channel 219, and in other embodiments, the diameter of the central channel 221 may be larger or smaller than the diameter of the central channel 219. The hole 225 may be characterized as having a diameter less than or about 50% of the diameter of the central channel 219, and may be characterized as having a diameter less than or about 40% of the diameter of the central channel 219, less than or about 30% of the diameter of the central channel 219, less than Or about 20% of the diameter of the central channel 219, less than or about 10% of the diameter of the central channel 219, less than or about 5% of the diameter of the central channel 219, or less.

The adapter 220 may define the port 222 through the outside of the adapter 220, such as along a side wall or side of the adapter 220. The port 222 may provide a passage for conveying the first mixed precursor to be mixed with the precursor provided from the remote plasma unit 210. The port 222 may provide a fluid path to the mixing channel 223 that may extend at least partially through the adapter 220 toward the central axis of the adapter 220. The mixing channel 223 may extend into the adapter 220 at any angle, and in some embodiments, the first portion 224 of the mixing channel 223 may extend perpendicular to the central axis passing through the adapter 220 in the flow direction, but the first A portion 224 may also extend toward the center axis passing through the adapter 220 at an inclined or skewed angle. The first portion 224 may span the hole 225, which may be distributed around the central axis of the adapter 220, similar to the hole 214 of the isolator 215 described above. With this distribution, the first portion 224 may extend toward the central axis of the adapter 220 through the hole 225 without crossing or intersecting the hole 225.

The first portion 224 of the mixing channel 223 may transition to the second portion 226 of the mixing channel 223, which may pass vertically through the adapter 220. In some embodiments, the second portion 226 may extend along the central axis through the adapter 220 and be axially aligned therewith. The second portion 226 may also extend through the middle portion of a circle or other geometric shape that extends through the central axis of each hole 225. The second portion 226 may extend to the second central channel 221 together with the hole 225 and be fluidly coupled with the second central channel 221. Therefore, in some embodiments, the precursor delivered through port 222 may be mixed with the precursor delivered through the remote plasma unit 210 in the lower portion of the adapter 220. This may constitute a first mixing stage within the component between the remote plasma unit 210 and the processing chamber 205.

Also shown in FIG. 2 is an alternative embodiment in which the second part 226 of the mixing channel 223 extends vertically in the opposite direction. For example, as described above, the second portion 226a may extend vertically toward the second central channel 221 to mix in the area. Alternatively, the second portion 226b may extend vertically toward the first central channel 219. Although shown in a hidden view, the second portion 226b is shown as a separate embodiment, and it should be understood that the adapter according to the present technology may include the first end 217 or the second end toward the adapter 220 The second part 226 of any version of the section 218 extends. When transported in the direction toward the first central channel 219, the mixing of the second precursor transported through the port 222 can occur in the first portion of the adapter 220, and can be achieved by making the precursor transported through the port 222 and from The precursor delivered by the remote plasma unit 210 flows through the plurality of holes 225 together to provide improved uniformity. When transported toward the second central channel 221, there may be less complete mixing due to the flow of the precursor, which may increase the central concentration of the precursor transported through the central channel 221. When transported toward the first central channel 219, the precursor passing through the port 222 can be distributed radially within the first central channel and advance more uniformly through the hole 225 because the precursor is subjected to the direction from the remote plasma unit 210 Downstream and/or forced by the pressure of the chamber.

The adapter 220 may be made of a material similar to or different from the isolator 215. In some embodiments, although the isolator may include ceramic or insulating material, the adapter 220 may be made of aluminum or include aluminum, an oxide of aluminum on one or more surfaces, treated aluminum, or some other material. For example, the inner surface of the adapter 220 may be coated with one or more materials to protect the adapter 220 from damage that may be caused by plasma effluent from the remote plasma unit 210. The inner surface of the adapter 220 may be anodized with a series of materials, which may be inert to the plasma effluent of fluorine, and may include, for example, yttrium oxide or barium titanate. The adapter 220 may also define grooves 227 and 228, which may be annular grooves and may be configured to seat o-rings or other sealing elements.

The spacer 230 may be coupled with the adapter 220. The spacer 230 may be or include ceramic, and may be a material similar to the isolator 215 or the adapter 220 in the embodiment. The spacer 230 may define a central hole 232 passing through the spacer 230. The central hole 232 may be characterized as a tapered shape passing through the spacer 230 from a portion close to the second central passage 221 of the adapter 220 to the opposite side of the spacer 230. The portion of the central hole 232 near the second central channel 221 may be characterized by a diameter equal to or similar to the diameter of the second central channel 221. In an embodiment, the central hole 232 may be characterized as a tapered percentage along the length of the spacer 230 of greater than or about 10%, and may be characterized as a tapered percentage of greater than or about 20%, greater than or about 30%, Greater than or approximately 40%, greater than or approximately 50%, greater than or approximately 60%, greater than or approximately 70%, greater than or approximately 80%, greater than or approximately 90%, greater than or approximately 100%, greater than Or about 150%, more than or about 200%, more than or about 300%, or more.

The mixing manifold 235 may be coupled to the spacer 230 at the first end 236 or the first surface, and may be coupled to the chamber 205 at the second end 237 opposite to the first end 236. The mixing manifold 235 may define a central channel 238 that may extend from the first end 236 to the second end 237 and may be configured for delivering precursors into the processing chamber 205. The mixing manifold 235 may also be configured to blend additional precursors with the mixed precursor delivered from the adapter 220. The mixing manifold may provide a second mixing stage within the system. The mixing manifold 235 may define the port 239 along the outside of the mixing manifold 235, such as along the side or side wall of the mixing manifold 235. In some embodiments, the mixing manifold 235 may define a plurality of ports 239 on opposite sides of the mixing manifold 235 to provide additional pathways for delivering precursors to the system. The mixing manifold 235 may also define one or more grooves in the first surface 236 of the mixing manifold 235. For example, the mixing manifold 235 may define a first groove 240 and a second groove 241 that may provide a fluid path from the port 239 to the central channel 238. For example, port 239 may provide access to channel 243, which may provide fluid access to one or two grooves, such as from below the grooves shown. The trenches 240, 241 will be described in more detail below.

The central channel 238 may be characterized by the first portion 242 extending from the first end 236 to the flared section 246. The first portion 242 may be characterized by a cylindrical profile, and may be characterized by a diameter similar to or equal to the outlet of the central hole 232 of the spacer 230. In an embodiment, the flare section 246 may be characterized as a flare percentage greater than or about 10%, greater than or about 20%, greater than or about 30%, greater than or about 40%, greater than or about 50% , Greater than or approximately 60%, greater than or approximately 70%, greater than or approximately 80%, greater than or approximately 90%, greater than or approximately 100%, greater than or approximately 150%, greater than or approximately 200%, Greater than or about 300%, or greater. In an embodiment, the mixing manifold 235 may be made of a material similar to or different from the adapter 220. For example, the mixing manifold 235 may contain nickel, which may provide sufficient protection for precursors that may all contact various parts of the mixing manifold. Unlike traditional technologies, because the fluorocarbon plasma effluent can already be mixed upstream of the mixing manifold, the problems associated with reorganization may not occur. For example, without wishing to be bound by any particular theory, nickel can catalyze the reformation of fluorine radicals to diatomic fluorine, which may cause the loss of polysilicon in conventional technology. When the fluorine effluent is mixed before being delivered to the nickel component, nickel-plated or nickel-coated component, the process can be limited because the concentration of the fluorine effluent can be reduced, thereby further protecting the polysilicon features at the substrate level.

The flared portion 246 may provide an outlet for the precursor delivered through the second end 237 through the mixing manifold 235 via the outlet 247. The section of the central channel 238 that passes through the mixing manifold 235 may be configured to provide sufficient or thorough mixing of the precursor delivered to the mixing manifold before providing the mixing precursor into the chamber 205. Unlike conventional techniques, by performing etchant or precursor mixing before delivery to the chamber, the present system can provide an etchant with uniform properties before the etchant is distributed around the chamber and the substrate. In addition, by providing multi-stage mixing, more uniform mixing can be provided for each precursor. In this way, the process performed using this technology can have a more uniform result on the substrate surface. The illustrated component stack can also limit particle accumulation by reducing the number of elastomer seals included in the stack, which can deteriorate over time and produce particles that can affect the process being performed.

The chamber 205 may include a plurality of components arranged in a stack. The chamber stack may include a gas box 250, a zone partition 260, a panel 270, an optional ion suppression element 280, and a lid spacer 290. These components can be used to distribute a precursor or group of precursors through the chamber to provide uniform transport of etchant or other precursors to the substrate for processing. In embodiments, these components may be stacked plates, each plate at least partially defining the exterior of the chamber 205.

The gas box 250 may define the chamber inlet 252. The central channel 254 may be defined through the gas box 250 to deliver the precursor into the chamber 205. The inlet 252 may be aligned with the outlet 247 of the mixing manifold 235. In embodiments, the inlet 252 and/or the central channel 254 may be characterized by similar diameters. The central channel 254 may extend through the gas tank 250 and be configured to deliver one or more precursors into the volume 257 defined by the gas tank 250 from above. The gas box 250 may include a first surface 253, such as a top surface; and a second surface 255 opposite to the first surface 253, such as a bottom surface of the gas box 250. In an embodiment, the top surface 253 may be a flat or substantially flat surface. The heater 248 may be coupled with the top surface 253.

In an embodiment, the heater 248 may be configured to heat the chamber 205, and may conductively heat each cover stack member. Heater 248 may be any type of heater, including fluid heaters, electric heaters, microwave heaters, or other devices configured to transfer heat to chamber 205 in a conductive manner. In some embodiments, the heater 248 may be or include an electric heater formed in a circular pattern around the first surface 253 of the gas tank 250. The heater may be defined across the gas tank 250 and surround the mixing manifold 235. The heater may be a plate heater or a resistive element heater, the heater may be configured to provide heat up to, about or greater than about 2,000 W, and may be configured to provide greater than or about 2,500 W, Heat greater than or approximately 3,000 W, greater than or approximately 3,500 W, greater than or approximately 4,000 W, greater than or approximately 4,500 W, greater than or approximately 5,000 W, or greater.

In an embodiment, the heater 248 may be configured to produce a variable chamber component temperature of up to, about, or greater than about 50°C, and may be configured to produce a greater than or about 75°C, greater than or about Chamber temperature of 100°C, greater than or about 150°C, greater than or about 200°C, greater than or about 250°C, greater than or about 300°C, or higher. The heater 248 may be configured to warm individual components (such as the ion suppression element 280) to any of these temperatures in order to facilitate processing operations, such as annealing. In some processing operations, the substrate may be raised toward the ion suppression element 280 to perform the annealing operation, and the heater 248 may be adjusted to conductively raise the temperature of the heater to any of the above specific temperatures, or within any temperature range, Or between any said temperature.

The second surface 255 of the gas box 250 may be coupled to the partition plate 260. The zone partition 260 may be characterized as having a diameter equal to or similar to the diameter of the gas box 250. The zone separator 260 may define a plurality of holes 263 through the zone separator 260, only a sample of the holes 263 is shown, which may allow the distribution of precursors (such as etchant) from the volume 257 and may begin to distribute through The precursor of the chamber 205 is used for uniform delivery to the substrate. Although only a few holes 263 are shown, it should be understood that the zone separator 260 may have any number of holes 263 defined through the structure. The zone partition 260 may be characterized as a rising annular section 265 at the outer diameter of the zone partition 260, and a descending annular section 266 at the outer diameter of the zone partition 260. In an embodiment, the rising annular section 265 may provide structural rigidity to the partition plate 260 and may define the side or outer diameter of the volume 257. The zone partition 260 may also define the bottom of the volume 257 from below. The volume 257 may allow the precursor to be distributed from the central passage 254 of the gas box 250 before the precursor passes through the hole 263 of the zone partition 260. In an embodiment, the lowered annular section 266 may also provide structural rigidity to the partition plate 260 and may define the lateral or outer diameter of the second volume 258. Zone partition 260 may also define the top of volume 258 from above, while the bottom of volume 258 may be defined by panel 270 from below.

The panel 270 may include a first surface 272 and a second surface 274 opposite to the first surface 272. The panel 270 may be coupled with the zone partition 260 at the first surface 272, which may engage the descending annular section 266 of the zone partition 260. The panel 270 may define a flange 273 at the interior of the second surface 274 that extends to a third volume 275 at least partially defined within or defined by the panel 270. For example, the panel 270 may define the side or outer diameter of the third volume 275 and the top of the volume 275 from above, while the ion suppression element 280 may define the third volume 275 from below. The panel 270 may define multiple channels through the panel, although not shown in FIG. 2.

The ion suppression element 280 may be positioned close to the second surface 274 of the panel 270 and may be coupled with the panel 270 at the second surface 274. The ion suppression element 280 may be configured to reduce ion migration into the processing area of the chamber 205 that houses the substrate. The ion suppression element 280 may define multiple holes through the structure, although not shown in FIG. 2. In an embodiment, the gas box 250, zone partition 260, panel 270, and ion suppression element 280 may be coupled together, and in embodiments may be directly coupled together. By directly coupling the components, the heat generated by the heater 248 can be conducted through the components to maintain a specific chamber temperature, which can be maintained with small variations between the components. The ion suppression element 280 may also contact the cover spacer 290, and the ion suppression element 280 together with the cover spacer 290 may at least partially define a plasma processing area in which the substrate is maintained during processing.

FIG. 3 shows a schematic partial bottom plan view of the isolator 215 according to some embodiments of the present technology. As previously mentioned, the isolator 215 may define a plurality of holes 214 that extend from the central channel 213 to the second end 212 of the isolator 215. The holes 214 may be distributed around the central axis passing through the isolator 215 and may be distributed equidistantly from the central axis passing through the isolator 215. The isolator 215 may define any number of holes 214, which may increase the movement, distribution, and/or turbulence of precursors flowing through the isolator 215.

FIG. 4 shows a schematic partial top plan view of the adapter 220 according to an embodiment of the present technology. As previously mentioned, the first central channel 219 may extend from the first end 217 of the adapter 220 and may extend partially through the adapter. The adapter may define a bottom plate of the central channel, the bottom plate may have a cylindrical profile, and may transition to a plurality of holes 225 extending through the adapter toward the second end, as described above. Similar to the holes 214, the holes 225 may be distributed around a central axis passing through the adapter 220, and may be positioned equidistantly around the central axis. The adapter 220 may define any number of holes through the adapter, and in some embodiments may define more holes than in the isolator 215. The additional holes can increase the mixing with the added precursor. As previously mentioned, the mixing channel can transport additional precursors towards the first end of the adapter and into the first central channel 219. In this embodiment, the views of FIGS. 4 and 5 will be reversed.

FIG. 5 shows a schematic cross-sectional view through an adapter according to the line AA in FIG some embodiments of the present technique 220 of FIG. FIG. 5 may show a view through the second central channel 221, which may show the exit through the second portion 226 described previously to the mixing channel. As shown, the second portion 226 may extend between the holes 225 and may extend along the central axis of the adapter 220 toward the second end of the adapter. In addition, as described above, in the embodiment where the second portion 226 extends toward the first central channel 219, the views of FIGS. 4 and 5 should be reversed, and the mixed precursor from the remote plasma unit and the pass adapter 220 The precursor introduced at the port in will leave hole 225 after premixing.

Figure 6 shows a schematic perspective view of a mixing manifold 235 according to some embodiments of the present technology. As previously mentioned, the mixing manifold 235 may define a central passage 238 through the mixing manifold, which may convey the mixing precursor from the adapter to the processing chamber. The mixing manifold 235 may also include many features that allow the introduction of additional precursors that can be mixed with previously mixed precursors. As previously mentioned, one or more ports 239 may provide a pathway for introducing precursors into the mixing manifold 235. The port 239 may open to a channel as shown in FIG. 2, which may extend into one or more grooves defined in the first surface 236 of the mixing manifold 235.

A groove may be defined in the first surface 236 of the mixing manifold 235, which may form an at least partially isolated channel when the mixing manifold is coupled with the spacer 230 previously discussed. The first trench 240 may be formed around the central channel 238. The first groove 240 may be ring-shaped, and may be characterized by an inner radius and an outer radius passing through the mixing manifold 235 from the central axis. The inner radius may be defined by the first inner side wall 605, which may define the top portion of the central channel 238 that extends through the mixing manifold 235. The outer radius of the first trench 240 may be defined by the first outer side wall 610, which may be located radially outside of the first inner side wall 605. The first groove 240 may provide a fluid path through the first inner sidewall 605 to the central channel 238. For example, the first inner side wall 605 may define a plurality of holes 606 through the first inner side wall 605. The holes 606 may be distributed around the first inner side wall 605 to provide multiple access locations for the delivery of additional precursors into the central channel 238.

The first inner side wall 605 may be characterized by a beveled or chamfered surface from the first surface 236 toward the first trench 240. In an embodiment, a chamfered profile may be formed, which may retain at least a portion of the first inner sidewall 605 along the first surface 236, which may be used to couple with the spacer 230 previously discussed. The chamfer can also provide further lateral spacing to prevent leakage on the first surface between the first trench 240 and the central channel 238. The hole 606 may be defined through the chamfered portion, and may be defined at an angle, such as at right angles to the plane of the chamfered portion, or through the first inner side wall 605 at some other angle.

The mixing manifold 235 may define a second groove 241 that is formed radially outward from the first groove 240. In some embodiments, the second groove 241 may also be annular, and the central channel 238, the first groove 240, and the second groove 241 may be concentrically aligned around a central axis passing through the mixing manifold 235. The second groove 241 may be fluidly coupled to the port 239 via the channel 243 previously described. The channel 243 may extend to one or more positions within the second trench 241, and may pass into the second trench 241 from the base of the trench, but in other embodiments, the channel 243 may also pass through the sidewall of the trench入槽241. By accessing from below the second trench 241, the depth of the second trench 241 can be minimized, which can reduce the volume of the formed channel, and can limit the diffusion of the delivered precursor to increase the uniformity of the delivery .

The second groove 241 may be defined between the first outer side wall 610 and the outer radius, which may alternatively be the second inner side wall, the outer radius being defined by the body of the mixing manifold 235. In an embodiment, the first outer sidewall 610 may define each of the first groove 240 and the second groove 241 along the first surface 236 of the mixing manifold 235. The first outer sidewall 610 may be characterized by an inclined or chamfered profile along the first surface 236 on the side of the first outer sidewall close to the second trench 241, the profile being similar to the profile of the first inner sidewall 605. The first outer sidewall 610 may also define a plurality of holes 608 defined through the wall to provide a fluid passage between the second groove 241 and the first groove 240. The hole 608 may be defined anywhere along the first outer side wall 610 or through the first outer side wall 610, and may be defined through the chamfered portion, similar to the hole through the first inner side wall 605. Therefore, the precursor transported through the port 239 can flow into the second groove 241, can enter the first groove 240 through the hole 608, and can enter the central channel 238 through the hole 606, and the precursor can be transported through the adapter 220 The precursors are mixed in the central channel 238.

The hole 608 may include any number of holes defined through the first outer side wall 610, and the hole 606 may include any number of holes defined through the first inner side wall 605. In some embodiments, the number of holes through each wall may not be equal. For example, in some embodiments, the number of holes 606 through the first inner sidewall 605 may be greater than the number of holes 608 through the first outer sidewall, and in some embodiments, the number of holes 606 may be the number of holes 608 The number is twice or more. In addition, the holes 608 may be radially offset from the holes 606 so that no holes 608 are in line with any holes 606 by a radius extending from the central axis of the mixing manifold 235. This hole and channel design can provide recurrent flow through the mixing manifold, thereby improving the delivery of additional precursors into the central channel 238, and can provide a more uniform delivery through each hole 606. The mixing manifold 235 may also define additional grooves 615, which may be radially outside of the second groove 241, and may be configured to receive elastomeric elements or o-rings.

FIG. 7 shows a schematic cross-sectional view of the mixing manifold 235 through line BB of FIG. 6 according to some embodiments of the present technology. The cross section shows holes 608 as they are defined to pass through the first outer sidewall 610 to provide a fluid path from the second groove 241 to the first groove 240. In addition, FIG. 7 shows some embodiments in which the holes 608 are spaced apart from each other by a full diameter through the first outer side wall. The holes 608 are also substantially spaced apart so that the ports 239 are equally spaced between the two holes 608. The previously described channel 243 may enter the second groove 241 at a similar position to have an equal or substantially equal distance from each hole 608.

Figure 8 shows a schematic cross-sectional view in accordance with some embodiments of the present technology mixing manifold through the line CC in FIG. 6 of the tube 235. The cross section shows the holes 606 as they are defined through the first inner side wall 605 to provide a fluid passage from the first groove 240 to the central channel 238. The holes 606 and 608 may extend through the chamfered portions of the first inner side wall and the first outer side wall, respectively, and may extend at an angle perpendicular to the chamfer angle, or at some other oblique angle. By including the angle of inclination through the features, such as the first outer sidewall 610, the delivery can provide a further distribution of the flow of the precursor before the precursor rises to flow through the next set of holes. This may also limit the processing effect of forming the hole, or otherwise damage the first surface 236. The mixing manifold 235 may provide a design that provides more uniform mixing of the precursor with one or more precursors that extend through the central channel 238.

9 illustrates a method of operation according to the delivery of the precursor through the processing chamber to some embodiments of the present technology 900. Method 900 may be performed in system 200 and may allow improved precursor mixing outside the chamber while protecting the components from the etchant. Although the components of the chamber can be exposed to an etchant that can cause wear over time, the technology can limit these components to components that can be replaced and repaired more easily. For example, the present technology may limit the exposure of internal components of the remote plasma unit, which may allow specific protection to be applied to the remote plasma unit.

The method 900 may include forming a remote plasma of a fluorine-containing precursor in operation 905. The precursor can be delivered to the remote plasma unit to be dissociated to produce a plasma effluent. In embodiments, the distal plasma unit may be coated or lined with oxides or other materials that can withstand contact with fluorine-containing effluents. In an embodiment, no other etchant precursors can be delivered through the remote plasma unit except the carrier gas, which can protect the unit from damage and allow the plasma power/power to be adjusted to provide specific dissociation of the precursor , Because this can benefit the specific processing being performed. Other embodiments of plasma effluents configured to produce different etchants may be lined with different materials, which may be inert to the precursor or combination of precursors.

At operation 910, the plasma effluent of the fluorine-containing precursor may be flowed into the adapter coupled to the remote plasma unit. At operation 915, the hydrogen-containing precursor may be flowed into the adapter. The adapter may be configured to provide a mixture of the fluorine-containing precursor and the hydrogen-containing precursor within the adapter to produce a first mixture at operation 920. At operation 925, the first mixture may flow from the adapter into the mixing manifold. At operation 930, a third precursor may be flowed into the mixing manifold. The third precursor may include additional hydrogen-containing precursors, additional halogen-containing precursors, or other combinations of precursors. The mixing manifold may be configured to perform a second mixing stage of the third precursor and the first mixture, which may produce the second mixture 935.

Subsequently, a second mixture including all three precursors may be transferred from the mixing manifold into the semiconductor processing chamber. As mentioned previously, additional components described elsewhere can be used to control the delivery and distribution of the etchant. It should be understood that the identified precursors are only examples of suitable precursors for use in the chamber. The chambers and materials discussed throughout this disclosure can be used in any number of other processing operations that can benefit from separating the precursors and mixing them before delivering the precursors into the processing chamber.

In the foregoing description, for the purposes of explanation, many details have been set forth to provide an understanding of various embodiments of the technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

Several embodiments have been disclosed, but those skilled in the art will recognize that various modifications, alternative configurations, and equivalents can be used without departing from the spirit of the embodiments. In addition, many well-known processes and components are not described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be considered as limiting the scope of the present technology.

Where a range of values is provided, it should be understood that unless the context clearly dictates otherwise, each median value between the upper and lower limits of the range, the minimum score to the lower limit unit, is also specifically disclosed. Any narrower range between any specified value or unspecified intermediate value contained within the specified range and any other specified value or intermediate value within the specified range. The upper and lower limits of these smaller ranges can be independently included or excluded in the range, and wherein the smaller range includes one of the upper and lower limits, does not include the upper and lower limits, and each range in which both the upper and lower limits are included It is also included in the technology, subject to any specifically excluded limit in the stated range. In the case where the range includes one or two of the limit values, a range excluding either or both of those included limit values is also included.

As used herein and in the scope of the accompanying patent applications, the singular forms "a", "an", and "said" include multiple referents unless the context clearly dictates otherwise. Thus, for example, reference to "a layer" includes a plurality of such layers, and reference to "the precursor" includes reference to one or more precursors and their equivalents known to those skilled in the art, and so on.

In addition, when used in this specification and the scope of the following patent applications, the words "include", "contain", "contain" and "include" are intended to indicate the existence of the recited features, integers, parts or operations, but they do not exclude One or more other features, integers, components, operations, actions, or groups exist or are added.

100: processing system

102: Front opening wafer transfer box

104: Robotic arm

106: holding area

110: Second robot arm

200: Exemplary processing system

205: processing chamber

210: remote plasma unit

211: First end

212: Second end

213: Channel

214: Hole

215: Isolator

217: First end

218: second end

219: Central passage

220: adapter

221: Second Central Passage

222: Port

223: Mixed channel

224: Part One

225: hole

226: Part Two

226a: Part Two

226b: Part Two

227: Groove

228: Groove

230: spacer

232: Central hole

235: Mixing manifold

236: First end

237: Second end

238: Central passage

239: Port

240: first groove

241: Second groove

242: Part One

243: Channel

246: Flaring section

247: Export

248: Heater

250: gas box

252: chamber entrance

253: First surface

254: Central passage

255: Second surface

257: Volume

258: Volume

260: Zone partition

263: Hole

265: Ascending circular section

266: descending circular section

270: Panel

272: The first surface

273: flange

274: Second surface

275: third volume

280: ion suppression element

290: cover spacer

605: First inner side wall

606: hole

608: hole

610: first outer side wall

615: Groove

900: Method

905-935: Operation

108a-f: substrate processing chamber

109a-c: tandem section

226a-b: part two

A further understanding of the nature and advantages of the disclosed technology can be achieved by reference to the rest of the specification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system according to some embodiments of the present technology.

2 shows a schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology.

3 shows a schematic partial bottom plan view of an isolator according to some embodiments of the present technology.

4 shows a schematic partial top plan view of an adapter according to some embodiments of the present technology.

5 shows a schematic cross-sectional view of the adapter through line A-A of FIG. 2 according to some embodiments of the present technology.

6 shows a schematic perspective view of a mixing manifold according to some embodiments of the present technology.

7 shows a schematic cross-sectional view of the mixing manifold through line B-B of FIG. 6 according to some embodiments of the present technology.

8 shows a schematic cross-sectional view of the mixing manifold through line C-C of FIG. 6 according to some embodiments of the present technology.

9 illustrates the operation of a method of delivering precursors through a processing system according to some embodiments of the present technology.

Several of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes only and should not be considered to scale unless specifically stated to be to scale. In addition, as a schematic diagram, the drawings are provided to help understanding, and the drawings may not include all aspects or information compared with the true representation, and may include exaggerated materials for illustrative purposes.

In the drawings, similar components and/or features may have the same reference signs. In addition, various components of the same type can be distinguished by following the reference signs with letters that distinguish similar components. If only the first reference number is used in the specification, the description applies to any one similar component having the same first reference number regardless of the letter.

200: Exemplary processing system

205: processing chamber

210: remote plasma unit

211: First end

212: Second end

213: Channel

214: Hole

215: Isolator

217: First end

218: second end

219: Central passage

220: adapter

221: Second Central Passage

222: Port

223: Mixed channel

224: Part One

225: hole

226a: Part Two

226b: Part Two

227: Groove

228: Groove

230: spacer

232: Central hole

235: Mixing manifold

236: First end

237: Second end

238: Central passage

239: Port

240: first groove

241: Second groove

242: Part One

243: Channel

246: Flaring section

247: Export

248: Heater

250: gas box

252: chamber entrance

253: First surface

254: Central passage

255: Second surface

257: Volume

258: Volume

260: Zone partition

263: Hole

265: Ascending circular section

266: descending circular section

270: Panel

272: The first surface

273: flange

274: Second surface

275: third volume

280: ion suppression element

290: cover spacer

Claims (18)

A semiconductor processing system includes: a processing chamber; a remote plasma unit, the remote plasma unit is coupled to the processing chamber; and a mixing manifold, the mixing manifold is coupled to Between the distal plasma unit and the processing chamber, wherein the mixing manifold is characterized by a first end and a second end opposite to the first end, wherein the mixing manifold is at the second Is coupled to the processing chamber at an end, wherein the mixing manifold defines a central passage through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is defined at A first groove in the first end of the mixing manifold is fluidly coupled, wherein the first groove is characterized by an inner radius and an outer radius at a first inner sidewall, and wherein the first groove The groove provides a fluid path through the first inner sidewall to the central channel. The semiconductor processing system of claim 1, wherein the hybrid manifold further includes a second trench defined in the first end of the hybrid manifold, wherein the second trench is positioned in the first trench Radially outside of the groove, and wherein the port is fluidly coupled with the second groove. The semiconductor processing system of claim 2, wherein the second trench is characterized by an inner radius at a second inner sidewall, and The second inner side wall further defines the outer radius of the first groove. The semiconductor processing system of claim 3, wherein the second inner sidewall defines a plurality of holes that are defined to pass through the second inner sidewall and provide a fluid path to the first trench. The semiconductor processing system of claim 4, wherein the first inner sidewall defines a plurality of holes that are defined to pass through the first inner sidewall and provide a fluid passage to the central channel. The semiconductor processing system according to claim 5, wherein each hole in the plurality of holes defined to pass through the second inner sidewall from each of the plurality of holes defined to pass through the first inner sidewall The aperture deviates to the ground. The semiconductor processing system of claim 1, further comprising an isolator coupled between the hybrid manifold and the remote plasma unit. The semiconductor processing system of claim 7, wherein the isolator includes a ceramic. The semiconductor processing system of claim 1, further comprising an adapter coupled between the hybrid manifold and the remote plasma unit. The semiconductor processing system of claim 9, wherein the adapter is characterized by a first end and a second end opposite the first end, wherein the adapter defines a portion extending through the adapter Pick up A central channel of the adapter, wherein the adapter defines an external port through the adapter, wherein the port is fluidly coupled to a mixing channel defined in the adapter, and wherein the mixing channel and the The central channel is fluidly coupled. The semiconductor processing system of claim 10, wherein the adapter includes an oxide on an inner surface of the adapter. The semiconductor processing system of claim 9, further comprising a spacer positioned between the adapter and the hybrid manifold. A semiconductor processing system, the semiconductor processing system includes: a processing chamber, the processing chamber includes: a gas box, the gas box defines a central channel, a partition plate, the partition plate is coupled to the gas box, The zone partition defines a plurality of holes passing through the zone partition, and a panel, the panel is coupled to the zone partition at a first surface of the panel; a remote plasma unit, the remote electrical The slurry unit is coupled to the processing chamber; and a mixing manifold coupled to the gas tank, wherein the mixing manifold includes a first end and a second end opposite the first end End characterization, where the mixing manifold is treated with the process at the second end A chamber is coupled, wherein the mixing manifold defines a central channel through the mixing manifold, the central channel is fluidly coupled with the central channel defined through the gas tank, wherein the mixing manifold is along the mixing manifold An exterior of the port defines a port, wherein the port is fluidly coupled to a first groove defined in the first end of the mixing manifold, wherein the first groove is formed by a An inner radius and an outer radius are characterized, and wherein the first groove provides a fluid path through the first inner sidewall to the central channel. The semiconductor processing system of claim 13, further comprising a heater that is externally coupled to the gas tank around a mixing manifold coupled to the gas tank. The semiconductor processing system of claim 13, wherein the hybrid manifold contains nickel. The semiconductor processing system of claim 13, further comprising a adapter coupled to the remote plasma unit, wherein the adapter is composed of a first end and the first end An opposite second end is characterized, wherein the adapter defines a central passage that extends partially from the first end through the adapter to a midpoint of the adapter, wherein the adapter defines a A plurality of inlet channels extending from the midpoint of the adapter toward the second end of the adapter, and wherein the plurality of inlet channels are radially distributed around a central axis passing through the adapter. The semiconductor processing system of claim 16, wherein the adapter defines an external port through the adapter, wherein the port is fluidly coupled to a mixing channel defined in the adapter, and wherein The mixing channel extends toward the second end of the adapter through a central portion of the adapter. The semiconductor processing system of claim 16, wherein the adapter defines an external port through the adapter, wherein the port is fluidly coupled to a mixing channel defined in the adapter, and wherein The mixing channel extends toward the midpoint of the adapter through a central portion of the adapter to fluidly enter the central channel defined by the adapter.

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