CN210129482U

CN210129482U - Semiconductor processing chamber multi-stage mixing apparatus

Info

Publication number: CN210129482U
Application number: CN201920469830.7U
Authority: CN
Inventors: M·T·萨米尔; D·杨
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2019-04-09
Filing date: 2019-04-09
Publication date: 2020-03-06
Anticipated expiration: 2029-04-09
Also published as: CN212277152U

Abstract

A semiconductor processing chamber multi-stage mixing apparatus is disclosed. An exemplary semiconductor processing system can include a process chamber and can include a remote plasma unit coupled to the process chamber. An exemplary system may also include a mixing manifold coupled between the remote plasma unit and the process chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the process chamber at the second end. The mixing manifold may define a central passage therethrough and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first groove defined within the first end of the mixing manifold. The first groove may be characterized by an inner radius and an outer radius at a first inner sidewall, and the first groove may provide a fluid passageway through the first inner sidewall to the central passage.

Description

Semiconductor processing chamber multi-stage mixing apparatus

Technical Field

The present technology relates to semiconductor systems, processes, and devices. More particularly, the present technology relates to systems and methods for delivering precursors within systems and chambers.

Background

Integrated circuits are made possible by processes that produce intricately patterned layers of materials on the surface of a substrate. The production of patterned materials on a substrate requires a controlled method for removing the exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern in the photoresist into an underlying layer, thinning a layer, or thinning the lateral dimensions of features already present on the surface. It is often desirable to have an etch process that etches one material faster than another material to facilitate, for example, a pattern transfer process or separate material removal. This etching process is said to be selective to the first material. Due to the variety of materials, circuits, and processes, etching processes having selectivity to various materials have been developed.

The etching process may be referred to as a wet or dry process based on the materials used in the process. The wet HF etch preferentially removes silicon oxide over other dielectrics and materials. However, wet processes may have difficulty penetrating some of the confined trenches and may also sometimes deform the remaining material. The dry etch process may penetrate into complex features and trenches, but may not provide an acceptable top-to-bottom profile. As device sizes continue to shrink in next generation devices, the manner in which the system delivers precursors into and through the chamber may have an increasing impact. As the importance of uniformity of processing conditions continues to increase, chamber design and system setup may play an important role in the quality of the devices produced.

Accordingly, there is a need for improved systems and methods that can be used to produce high quality devices and structures. The present technology addresses these and other needs.

SUMMERY OF THE UTILITY MODEL

An exemplary semiconductor processing system can include a process chamber and can include a remote plasma unit coupled to the process chamber. The exemplary system may also include a mixing manifold coupled between the remote plasma unit and the process chamber. The mixing manifold is characterized by a first end and a second end opposite the first end, and may be coupled with the process chamber at the second end. The mixing manifold may define a central passage therethrough and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first groove defined within a first end of the mixing manifold. The first groove may be characterized by an inner radius at the first inner sidewall and an outer radius, and the first groove may provide a fluid passageway through the first inner sidewall to the central channel.

In some embodiments, the mixing manifold may further include a second groove defined within the first end of the mixing manifold. The second groove may be positioned radially outward of the first groove, and the port may be fluidly coupled with the second groove. The second groove may be characterized by an inner radius at the second inner sidewall. The second inner sidewall may also define an outer radius of the first groove. The second inner side wall may define a plurality of apertures defined through the second inner side wall and providing fluid access to the first groove. The first inner side wall may define a plurality of apertures defined through the first inner side wall and providing fluid access to the central channel. Each of the plurality of apertures defined through the second inner side wall may be radially offset from each of the plurality of apertures defined through the first inner side wall.

The system may also include an isolator coupled between the mixing manifold and the remote plasma unit. The separator may be ceramic or comprise ceramic. The system may also include an adapter coupled between the mixing manifold and the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central passage extending partially through the adapter. The adapter may define a port through an exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel may be fluidly coupled to the central channel. The adapter may include an oxide on an inner surface of the adapter. The system may also include a spacer located between the adapter and the mixing manifold.

The present techniques may also encompass semiconductor processing systems. The system may include a remote plasma unit. The system may include a process chamber that may include a gas box defining a central passage. The system may include a zone baffle coupled to the gas box. The zone partitions may define a plurality of apertures therethrough. The system may include a panel coupled with a divider at a first surface of the panel. The system may also include a mixing manifold coupled to the gas box. The mixing manifold may be characterized by a first end and a second end opposite the first end. The mixing manifold may be coupled with the process chamber at the second end. The mixing manifold may define a central passage through the mixing manifold that is fluidly coupled with a central passage defined through the gas box. The mixing manifold may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first groove defined within a first end of the mixing manifold. The first groove may be characterized by an inner radius at the first inner sidewall and an outer radius. The first groove may provide a fluid passageway through the first inner side wall to the central channel.

In some embodiments, the system may further include a heater coupled to the gas box externally around a mixing manifold coupled to the gas box. The mixing manifold may be nickel or comprise nickel. The system may include an adapter coupled to the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central passage extending from the first end of the adapter partially through the adapter to a midpoint of the adapter. The adapter may define a plurality of access channels extending from a midpoint of the adapter to the second end of the adapter. The plurality of access passages may be radially distributed about a central axis through the adapter. The adapter may define a port through an exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel may extend through a central portion of the adapter toward the second end of the adapter. The adapter may define a port through an exterior of the adapter. The port may be fluidly coupled with a mixing channel defined within the adapter. The mixing channel may extend through a central portion of the adapter toward a midpoint of the adapter to fluidly enter a central channel defined by the adapter.

The present techniques may also encompass methods of delivering precursors through a semiconductor processing system. The method may include forming a plasma of a fluorine-containing precursor in a remote plasma unit. The method may include flowing plasma effluents of a fluorine-containing precursor into an adapter. The method may include flowing a hydrogen-containing precursor into the adapter. The method may include mixing a hydrogen-containing precursor with the plasma effluents to produce a first mixture. The method may include flowing a first mixture into a mixing manifold. The method may include flowing a third precursor into a mixing manifold. The method may include mixing a third precursor with the first mixture to produce a second mixture. The method may also include flowing a second mixture into the processing chamber.

Such techniques may provide many benefits over conventional systems and techniques. For example, the present techniques may utilize a limited number of components compared to conventional designs. In addition, by utilizing components that generate etchant species outside of the chamber, mixing and delivery to the substrate may be provided more uniformly over conventional systems. These and other embodiments and many of their advantages and features are described in more detail in conjunction with the following description and the accompanying drawings.

Drawings

A further understanding of the nature and advantages of the disclosed techniques may be realized by reference to the remaining portions of the specification and the attached drawings.

Fig. 1 illustrates a top plan view of an exemplary processing system, in accordance with some embodiments of the present technique.

Fig. 2 illustrates a schematic cross-sectional view of an exemplary process chamber, in accordance with some embodiments of the present technique.

Fig. 3 illustrates a schematic partial bottom plan view of an isolator in accordance with some embodiments of the present technique.

Fig. 4 illustrates a schematic partial top plan view of an adapter in accordance with some embodiments of the present technique.

Fig. 5 illustrates a schematic cross-sectional view of an adapter through line a-a of fig. 2, in accordance with some embodiments of the present technique.

Fig. 6 illustrates a schematic perspective view of a mixing manifold, in accordance with some embodiments of the present technique.

Fig. 7 illustrates a schematic cross-sectional view of a mixing manifold through line B-B of fig. 6, in accordance with some embodiments of the present technique.

Fig. 8 illustrates a schematic cross-sectional view of a mixing manifold through line C-C of fig. 6, in accordance with some embodiments of the present technique.

Fig. 9 illustrates operations of a method of delivering precursors through a processing system, in accordance with some embodiments of the present technique.

Several of which are included as schematic illustrations. It should be understood that the drawings are for illustrative purposes only and are not to be taken as being to scale unless specifically indicated to be to scale. In addition, the drawings are provided as schematic diagrams to aid understanding, and may not include all aspects or information compared to actual representations and may include exaggerated materials for illustrative purposes.

In the drawings, similar components and/or features may have the same reference numerals. Further, various components of the same type may be distinguished by following the reference label by a letter that joins a similar component. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the letter.

Detailed Description

The present techniques include semiconductor processing systems, chambers, and components for performing semiconductor manufacturing operations. Many dry etch operations performed during semiconductor fabrication may involve multiple precursors. When energized and combined in various ways, these etchants can be delivered to the substrate to remove or modify aspects of the substrate. Conventional processing systems may provide precursors in a variety of ways, such as for deposition or etching. One method of providing an enhanced precursor is to provide all of the precursor by a remote plasma unit prior to delivery of the precursor through a processing chamber and to a substrate (e.g., wafer) for processing. However, a problem with the process is that different precursors may react with different materials, which may result in damage to the remote plasma unit or the components delivering the precursors. For example, the enhanced fluorine-containing precursor may react with an aluminum surface, but may not react with an oxide surface. The enhanced hydrogen-containing precursor may not react with the aluminum surface within the remote plasma unit, but may react with and remove the oxide coating. Thus, if two precursors are delivered together by a remote plasma unit, they may damage the coating or liner within the unit. In addition, the power at which the plasma is ignited may affect the process being performed by the amount of dissociation generated. For example, in some processes, a large amount of dissociation of a hydrogen-containing precursor may be beneficial, but a lower amount of dissociation of a fluorine-containing precursor may allow for more controllable etching.

Conventional processes may also deliver one precursor through a remote plasma device for plasma processing and a second precursor directly into the chamber. However, a problem with this process is that the mixing of precursors may be difficult, may not provide sufficient control of etchant generation, and may not provide uniform etchant across the wafer or substrate. This may result in the process not being performed uniformly over the substrate surface, which may lead to device problems as patterning and formation continues.

The present technology can overcome these problems by: components and systems configured to mix precursors prior to delivery into a chamber while only one etchant precursor is delivered through a remote plasma unit are utilized, although multiple precursors (such as carrier gases or other etchant precursors) may also be flowed through a remote plasma unit. Certain bypass schemes may thoroughly mix the precursors prior to delivery to the processing chamber, and may provide intermediate mixing as each precursor is added to the system. This may allow a uniform process to be performed while protecting the remote plasma unit. The chamber of the present technology may also include a component configuration that maximizes thermal conductivity through the chamber and increases ease of maintenance by coupling the components in a particular manner.

While the remaining disclosure will routinely identify the particular etching process utilizing the disclosed techniques, it will be readily appreciated that the system and method are equally applicable to deposition and cleaning processes that may occur in the chamber. Thus, the techniques should not be considered limited to use with etching processes. Before describing aspects and variations of components of the system in accordance with embodiments of the present technique, the present disclosure will discuss one possible system and chamber that may be used with the present technique to perform certain removal operations.

Fig. 1 illustrates a top plan view of one embodiment of a processing system 100 having a deposition chamber, an etch chamber, a bake chamber, and a cure chamber, according to embodiments. In this figure, a pair of Front Opening Unified Pods (FOUPs) 102 supply substrates of various sizes that are received by a robot 104 and placed in a low pressure holding area 106 and then placed into one of the substrate processing chambers 108a-f positioned in the tandem sections 109 a-c. The second robot 110 may be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and back. In addition to Cyclical Layer Deposition (CLD), Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, pre-cleaning, degasing, orientation, and other substrate processes, each substrate processing chamber 108a-f may be equipped to perform a variety of substrate processing operations, including the dry etch processes described herein.

The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and/or etching dielectric films on substrate wafers. In one configuration, two pairs of process chambers (e.g., 108c-d and 108e-f) may be used to deposit dielectric material on the substrate, and a third pair of process chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) may be configured to etch a dielectric film on a substrate. Any one or more of the processes described may be performed in a chamber(s) separate from the manufacturing system shown in the various embodiments. It should be understood that additional configurations of chambers for deposition, etching, annealing, and curing of dielectric films are contemplated by the system 100.

Fig. 2 shows a schematic cross-sectional view of an exemplary processing system 200 in accordance with embodiments of the present technique. The system 200 may include a processing chamber 205 and a remote plasma unit 210. The remote plasma unit 210 may be coupled to a process chamber 205 having one or more components. Remote plasma unit 210 may be coupled with one or more of isolator 215, adapter 220, spacer 230, and mixing manifold 235. The mixing manifold 235 may be coupled to the top of the process chamber 205 and may be coupled to an inlet of the process chamber 205.

Isolator 215 may be coupled to remote plasma unit 210 at a first end 211 and may be coupled to adapter 220 at a second end 212 opposite first end 211. One or more channels may be defined through the separator 215. An opening or port to the channel 213 may be defined at the first end 211. The channel 213 may be centrally defined within the isolator 215 and may be characterized by a first cross-sectional surface area in a direction perpendicular to a central axis through the isolator 215, which may be in the direction of flow from the remote plasma unit 210. The diameter of the channel 213 may be equal to or the same as the outlet from the remote plasma unit 210. The channel 213 may be characterized by a length from the first end 211 to the second end 212. The channel 213 may extend through the entire length of the separator 215, or through a length less than the length from the first end 211 to the second end 212. For example, the channel 213 may extend less than half the length from the first end 211 to the second end 212, the channel 213 may extend partway the length from the first end 211 to the second end 212, the channel 213 may extend more than half the length from the first end 211 to the second end 212, or the channel 213 may extend about half the length from the first end 211 to the second end 212 of the separator 215.

The channel 213 may transition to a smaller aperture 214, the smaller aperture 214 extending from the base of the channel 213 defined within the isolator 215 through the second end 212. For example, one such smaller aperture 214 is shown in fig. 2, but it is understood that any number of apertures 214 may be defined through the separator 215 from the channel 213 to the second end 212. The smaller holes may be distributed about the central axis of the isolator 215, as will be discussed further below. The smaller apertures 214 may be characterized by a diameter that is less than or about 50% of the diameter of the channel 213, and may be characterized by a diameter that is less than or about 40% of the diameter of the channel 213, less than or about 30% of the diameter of the channel 213, less than or about 20% of the diameter of the channel 213, less than or about 10% of the diameter of the channel 213, less than or about 5% of the diameter of the channel 213, or less. The isolator 215 may also define one or more trenches defined below the isolator 215. The groove may be or include one or more annular grooves defined within the isolator 215 to allow seating of an o-ring or elastomeric element, which may allow coupling with the adapter 220.

The isolator 215 may be a lower thermal conductivity material, although other components of the processing system may be metallic or thermally conductive. In some embodiments, the isolator 215 may be or include a ceramic, plastic, or other thermally insulating component configured to provide a thermal barrier between the remote plasma unit 210 and the chamber 205. During operation, the remote plasma unit 210 may be cooled or operated at a lower temperature relative to the chamber 205, while the chamber 205 may be heated or operated at a higher temperature relative to the remote plasma unit 210. Providing a ceramic or thermally insulating isolator 215 may prevent or limit thermal, electrical, or other interference between components.

In an embodiment, the adapter 220 may be coupled with the second end 212 of the isolator 215. The adapter 220 may be characterized by a first end 217 and a second end 218 opposite the first end 217. Adapter 220 may define one or more central passages through portions of adapter 220. For example, the central passage 219 or first central passage may extend from the first end 217 at least partially through the adapter 220 toward the second end 218, and may extend through any length of the adapter 220. Similar to central passage 213 of spacer 215, central passage 219 may extend through adapter 220 less than half the length of adapter 220, may extend about half the length of adapter 220, or may extend more than half the length of adapter 220. The central passage 219 may be characterized by a diameter, which may be related to the diameter of the passage 213, equal to or substantially equal to the diameter of the passage 213. Additionally, the central passage 219 may be characterized by a diameter that surrounds the apertures 214 of the isolator 215 and, in embodiments, precisely surrounds the shape of the apertures 214, such as by being characterized by a radius that is substantially similar or identical to a radius defined as an outer edge that passes through the isolator 215 from a central axis and extends to the diameter of each aperture 214. For example, the central passage 219 may be characterized by a circular or oval shape characterized by one or more diameters that may extend tangentially to an outer portion of each aperture 214.

The adapter 220 may define a base of the central passage 219 within the adapter 220, which may define a transition from the central passage 219 to a plurality of holes 225, which holes 225 may extend at least partially through the adapter 220. The transition may occur at a midpoint through the adapter, which may be at any location along the length of the adapter. For example, the aperture 225 may extend from the base of the central passage 219 toward the second end 218 of the adapter 220, and may extend completely through the second end 218. In other embodiments, the aperture 225 may extend through an intermediate portion of the adapter 220 from a first end into the central passage 219 to a second end into a second central passage 221, which second central passage 221 may extend through the second end 218 of the adapter 220. The central passage 221 may be characterized by a diameter similar to the diameter of the central passage 219, and in other embodiments, the diameter of the central passage 221 may be greater than or less than the diameter of the central passage 219. The aperture 225 may be characterized as having a diameter that is less than or about 50% of the diameter of the central passage 219, and may be characterized as having a diameter that is less than or about 40% of the diameter of the central passage 219, less than or about 30% of the diameter of the central passage 219, less than or about 20% of the diameter of the central passage 219, less than or about 10% of the diameter of the central passage 219, less than or about 5% of the diameter of the central passage 219, or less.

Adapter 220 may define port 222 through the exterior of adapter 220, such as along a sidewall or side of adapter 220. Port 222 may provide a passage for delivering a first mixed precursor to be mixed with the precursor provided from remote plasma unit 210. The port 222 may provide a fluid pathway to a mixing channel 223, which mixing channel 223 may extend at least partially through the adapter 220 toward a central axis of the adapter 220. The mixing channel 223 may extend into the adapter 220 at any angle, and in some embodiments, the first portion 224 of the mixing channel 223 may extend perpendicular to a central axis through the adapter 220 in the direction of flow, but the first portion 224 may also extend at an oblique or skewed angle toward the central axis through the adapter 220. The first portion 224 may span an aperture 225, which aperture 225 may be distributed about a central axis of the adapter 220, similar to the aperture 214 of the spacer 215 described above. With this distribution, the first portion 224 may extend through the aperture 225 toward the central axis of the adapter 220 without intersecting or intersecting the aperture 225.

The first portion 224 of the mixing channel 223 may transition to a second portion 226 of the mixing channel 223, which second portion 226 may pass perpendicularly through the adapter 220. In some embodiments, the second portion 226 may extend along and be axially aligned with a central axis through the adapter 220. The second portion 226 may also extend through a middle portion of a circle or other geometric shape that extends through the central axis of each aperture 225. The second portion 226 may extend with the aperture 225 to the second central channel 221 and fluidly couple with said second central channel 221. Thus, in some embodiments, the precursor delivered through port 222 may mix with the precursor delivered through remote plasma unit 210 within the lower portion of adapter 220. This may constitute a first mixing stage within the components between the remote plasma unit 210 and the process chamber 205.

Also shown in fig. 2 is an alternative embodiment in which the second portion 226 of the mixing channel 223 extends vertically in the opposite direction. For example, as described above, the second portion 226a may extend perpendicularly toward the second central channel 221 to mix within the region. Alternatively, the second portion 226b may extend perpendicularly toward the first central passage 219. Although shown in a hidden view, the second portion 226b is shown as a separate embodiment, and it should be understood that an adapter in accordance with the present technology may include any version of the second portion 226 extending toward the first end 217 or the second end 218 of the adapter 220. Mixing of the second precursor delivered through the port 222 may occur within the first portion of the adapter 220 when delivered in a direction toward the first central passage 219, and improved uniformity may be provided by flowing the precursor delivered through the port 222 through the plurality of holes 225 along with the precursor delivered from the remote plasma unit 210. When delivered towards the second central channel 221, less complete mixing may occur due to the flow of the precursors, which may increase the central concentration of the precursors delivered through the central channel 221. When delivered toward the first central passage 219, the precursor passing through the port 222 may be distributed radially within the first central passage and proceed more uniformly through the aperture 225 as it is forced by the downward flow from the remote plasma unit 210 and/or the pressure through the chamber.

Adapter 220 may be made of a similar or different material than isolator 215. In some embodiments, while the isolator may comprise a ceramic or insulating material, the adapter 220 may be made of aluminum or comprise aluminum, an oxide comprising aluminum on one or more surfaces, treated aluminum, or some other material. For example, the inner surface of adapter 220 may be coated with one or more materials to protect adapter 220 from damage that may be caused by plasma effluents from remote plasma unit 210. The inner surface of adapter 220 may be anodized with a range of materials that may be inert to the fluorine plasma effluents and may include, for example, yttrium oxide or barium titanate. Adapter 220 may also define

grooves

227 and 228, which

grooves

227 and 228 may be annular grooves and may be configured for seating o-rings or other sealing elements.

The spacer 230 may be coupled with the adapter 220. The spacer 230 may be or include a ceramic, and in embodiments may be a similar material as the isolator 215 or the adapter 220. The spacer 230 may define a central aperture 232 through the spacer 230. The central aperture 232 may be characterized as a tapered shape through the spacer 230 from a portion proximate the second central channel 221 of the adapter 220 to an opposite side of the spacer 230. The portion of the central bore 232 proximate to the second central channel 221 may be characterized by a diameter equal or similar to the diameter of the second central channel 221. In embodiments, the central aperture 232 may be characterized as having a taper percentage along the length of the spacer 230 of greater than or about 10%, and may be characterized as having a taper percentage of greater than or about 20%, greater than or about 30%, greater than or about 40%, greater than or about 50%, greater than or about 60%, greater than or about 70%, greater than or about 80%, greater than or about 90%, greater than or about 100%, greater than or about 150%, greater than or about 200%, greater than or about 300%, or greater.

The mixing manifold 235 may be coupled with the spacer 230 at a first end 236 or surface, and may be coupled with the chamber 205 at a second end 237 opposite the first end 236. The mixing manifold 235 may define a central passage 238, which central passage 238 may extend from the first end 236 to the second end 237 and may be configured for delivering precursors into the process chamber 205. Mixing manifold 235 may also be configured for blending additional precursors with the mixed precursor delivered from adapter 220. The mixing manifold may provide a second mixing stage within the system. Mixing manifold 235 may define port 239 along an exterior of mixing manifold 235, such as along a side or sidewall of mixing manifold 235. In some embodiments, mixing manifold 235 may define a plurality of ports 239 on opposing sides of mixing manifold 235 to provide additional passageways for delivery of precursors to the system. The mixing manifold 235 may also define one or more grooves within the first surface 236 of the mixing manifold 235. For example, mixing manifold 235 may define a first groove 240 and a second groove 241, which first groove 240 and second groove 241 may provide a fluid pathway from port 239 to central channel 238. For example, the port 239 may provide access to a channel 243, and the channel 243 may provide fluid access to one or both grooves, such as from below the groove as shown. The

trenches

240, 241 will be described in more detail below.

The central passage 238 may be characterized by a first portion 242 extending from the first end 236 to a flared section 246. The first portion 242 may be characterized by a cylindrical profile and may be characterized by a diameter similar to or equal to the outlet of the central bore 232 of the spacer 230. In embodiments, the flared section 246 may be characterized by a flare percentage of greater than or about 10%, greater than or about 20%, greater than or about 30%, greater than or about 40%, greater than or about 50%, greater than or about 60%, greater than or about 70%, greater than or about 80%, greater than or about 90%, greater than or about 100%, greater than or about 150%, greater than or about 200%, greater than or about 300%, or greater. In embodiments, mixing manifold 235 may be made of a similar or different material than adapter 220. For example, mixing manifold 235 may comprise nickel, which may provide sufficient protection for precursors that may all contact portions of the mixing manifold. Unlike conventional techniques, because the fluorine plasma effluents may already be mixed upstream of the mixing manifold, problems associated with recombination may not occur. For example, without wishing to be bound by any particular theory, nickel may catalyze fluorine radicals to recombine into diatomic fluorine, which may lead to polysilicon loss in conventional techniques. When the fluorine outflow is mixed prior to delivery to the nickel, nickel-plated, or nickel-coated components, the process may be limited because the concentration of the fluorine outflow may be reduced, thereby further protecting the polysilicon features at the substrate level.

Flared portion 246 may provide an outlet via outlet 247 for precursor delivered through second end 237 by mixing manifold 235. The section of the central passage 238 passing through the mixing manifold 235 may be configured to provide sufficient or thorough mixing of the precursors delivered to the mixing manifold prior to providing the mixed precursors into the chamber 205. Unlike conventional techniques, by performing etchant or precursor mixing prior to delivery to the chamber, the present system may provide an etchant with uniform properties before the etchant is distributed around the chamber and substrate. In addition, by providing multiple stages of mixing, more uniform mixing may be provided for each precursor. In this manner, processes performed using the present techniques may have more uniform results across the surface of the substrate. The illustrated component stack may also limit particle accumulation by reducing the number of elastomeric seals included in the stack, which may degrade over time and produce particles that may affect the process being performed.

The chamber 205 may include multiple components arranged in a stack. The chamber stack may include a gas box 250, a divider plate 260, a face plate 270, an optional ion suppression element 280, and a lid spacer 290. These components may be used to distribute a precursor or a set of precursors through the chamber to provide uniform delivery of etchant or other precursors to the substrate for processing. In an embodiment, these components may be stacked plates, each plate at least partially defining the exterior of the chamber 205.

The gas box 250 may define a chamber inlet 252. A central passage 254 may be defined through the gas box 250 to deliver precursors into the chamber 205. The inlet 252 may be aligned with the outlet 247 of the mixing manifold 235. In embodiments, the inlet 252 and/or the central passage 254 may be characterized by similar diameters. The central passage 254 may extend through the gas box 250 and be configured for delivering one or more precursors into a volume 257 defined by the gas box 250 from above. The gas box 250 may include a first surface 253, such as a top surface; and a second surface 255, such as a bottom surface of the gas box 250, opposite the first surface 253. In an embodiment, top surface 253 can be a flat or substantially flat surface. Heater 248 may be coupled with top surface 253.

In an embodiment, heater 248 may be configured to heat chamber 205 and may conductively heat each lid stack component. Heater 248 may be any type of heater including a fluid heater, an electric heater, a microwave heater, or other device configured to conductively deliver heat to chamber 205. In some embodiments, the heater 248 may be or include an electric heater formed in an annular pattern around the first surface 253 of the gas box 250. A heater may be defined across the gas box 250 and around the mixing manifold 235. The heater may be a plate heater or a resistive element heater, which may be configured to provide heat up to, about, or greater than about 2,000 watts, and may be configured to provide heat greater than or about 2,500 watts, greater than or about 3,000 watts, greater than or about 3,500 watts, greater than or about 4,000 watts, greater than or about 4,500 watts, greater than or about 5,000 watts, or greater.

In embodiments, heater 248 may be configured to produce variable chamber component temperatures up to, about, or greater than about 50 ℃, and may be configured to produce chamber component temperatures greater than or about 75 ℃, greater than or about 100 ℃, greater than or about 150 ℃, greater than or about 200 ℃, greater than or about 250 ℃, greater than or about 300 ℃, or higher. The heater 248 may be configured to warm the individual components (such as the ion suppression element 280) to any of these temperatures in order to facilitate processing operations, such as annealing. In some processing operations, the substrate may be raised toward the ion suppression element 280 for an annealing operation, and the heater 248 may be adjusted to conductively raise the temperature of the heater to any of the particular temperatures described above, or within any temperature range, or between any of the temperatures described.

The second surface 255 of the gas box 250 may be coupled with a divider plate 260. The divider plate 260 may be characterized by a diameter equal to or similar to the diameter of the gas box 250. The blocker plate 260 may define a plurality of apertures 263 through the blocker plate 260, only the sample of the apertures 263 being shown, which apertures 263 may allow for the distribution of precursors (such as etchants) from the volume 257 and may begin to distribute the precursors through the chamber 205 for uniform delivery to the substrate. Although only a few apertures 263 are shown, it should be understood that the sectional partition 260 may have any number of apertures 263 defined through the structure. The divider plate 260 may be characterized as a rising annular section 265 at the outer diameter of the divider plate 260 and a falling annular section 266 at the outer diameter of the divider plate 260. In an embodiment, the raised annular section 265 may provide structural rigidity to the divider plate 260 and may define a side or outer diameter of the volume 257. The divider plate 260 may also define the bottom of the volume 257 from below. The volume 257 may allow distribution of the precursor from the central passage 254 of the gas box 250 before the precursor passes through the holes 263 of the zone partition 260. In an embodiment, the lowered annular section 266 may also provide structural rigidity to the divider plate 260 and may define a side or outer diameter of the second volume 258. The divider plate 260 may also define the top of the volume 258 from above, while the bottom of the volume 258 may be defined from below by the panel 270.

The panel 270 may include a first surface 272 and a second surface 274 opposite the first surface 272. The face plate 270 may be coupled to the divider plate 260 at a first surface 272, which first surface 272 may engage the descending annular section 266 of the divider plate 260. The panel 270 may define a flange 273 at an interior of the second surface 274, the flange 273 extending to a third volume 275 at least partially defined within or by the panel 270. For example, the panel 270 may define a side or outer diameter of the third volume 275 and a top of the volume 275 from above, while the ion suppression element 280 may define the third volume 275 from below. The panel 270 may define a plurality of channels through the panel, although not shown in fig. 2.

The ion suppression element 280 may be positioned proximate to the second surface 274 of the panel 270 and may be coupled to the panel 270 at the second surface 274. The ion suppression element 280 may be configured to reduce ion migration into the processing region of the chamber 205 housing the substrate. The ion suppression element 280 may define a plurality of apertures through the structure, although not shown in fig. 2. In embodiments, the gas box 250, the separator 260, the faceplate 270, and the ion suppression element 280 may be coupled together, and in embodiments may be directly coupled together. By directly coupling the components, the heat generated by the heater 248 may be conducted through the components to maintain a particular chamber temperature that may be maintained with little variation between the components. The ion suppression element 280 may also contact the cap spacer 290, and the ion suppression element 280 together with the cap spacer 290 may at least partially define a plasma processing region in which the substrate is held during processing.

Fig. 3 illustrates a schematic partial bottom plan view of the isolator 215 in accordance with some embodiments of the present technique. As previously described, the separator 215 may define a plurality of apertures 214, the plurality of apertures 214 extending from the central passage 213 to the second end 212 of the separator 215. The holes 214 may be distributed about a central axis through the separator 215 and may be distributed equidistantly from the central axis through the separator 215. The separator 215 may define any number of apertures 214, which may increase the movement, distribution, and/or turbulence of the precursor flowing through the separator 215.

Fig. 4 shows a schematic partial top plan view of an adapter 220 in accordance with embodiments of the present technique. As previously described, the first central passage 219 may extend from the first end 217 of the adapter 220 and may extend partially through the adapter. The adapter may define a floor of the central passage, which may have a cylindrical profile, and may transition to a plurality of holes 225, which plurality of holes 225 extend through the adapter toward the second end, as described above. Similar to the holes 214, the holes 225 may be distributed about a central axis through the adapter 220 and may be positioned equidistantly about the central axis. Adapter 220 may define any number of holes through the adapter, and in some embodiments may define more holes than in isolator 215. Additional holes may increase mixing with added precursor. As previously described, the mixing channel may deliver additional precursor toward the first end of the adapter and into the first central channel 219. In this embodiment, the views of fig. 4 and 5 would be reversed.

Fig. 5 illustrates a schematic cross-sectional view of adapter 220 through line a-a of fig. 2, in accordance with some embodiments of the present technique. Fig. 5 may show a view through the second central channel 221, which may show an outlet to the mixing channel through the second portion 226 as previously described. As shown, the second portion 226 may extend between the apertures 225 and may extend along a central axis of the adapter 220 toward the second end of the adapter. Additionally, as described above, in embodiments where the second portion 226 extends toward the first central passage 219, the views of fig. 4 and 5 should be reversed, and the mixed precursor from the remote plasma unit and the precursor introduced through the port in the adapter 220 will exit the bore 225 after premixing.

Fig. 6 illustrates a schematic perspective view of a mixing manifold 235, in accordance with some embodiments of the present technique. As previously described, the mixing manifold 235 may define a central passage 238 through the mixing manifold, which central passage 238 may deliver the mixed precursor from the adapter to the process chamber. Mixing manifold 235 may also include a number of features that allow for the introduction of additional precursors that may be mixed with previously mixed precursors. As previously described, one or more ports 239 may provide a passage for introducing precursors into mixing manifold 235. The port 239 may lead to a channel as shown in fig. 2, which may extend into one or more grooves defined in the first surface 236 of the mixing manifold 235.

Grooves may be defined in the first surface 236 of the mixing manifold 235 that may form at least partially isolated channels when the mixing manifold is coupled with the spacer 230 discussed previously. A first groove 240 may be formed around the central channel 238. The first groove 240 may be annular in shape and may be characterized by an inner radius and an outer radius passing through the mixing manifold 235 from a central axis. The inner radius may be defined by a first inner sidewall 605, which first inner sidewall 605 may define a top portion of the central passage 238 extending through the mixing manifold 235. The outer radius of the first groove 240 may be defined by a first outer sidewall 610, which first outer sidewall 610 may be located radially outward of the first inner sidewall 605. The first groove 240 may provide a fluid pathway through the first inner sidewall 605 to the central channel 238. For example, the first inner side wall 605 may define a plurality of apertures 606 through the first inner side wall 605. The apertures 606 may be distributed around the first inner sidewall 605 to provide multiple access locations for delivering additional precursors into the central passage 238.

The first inner side wall 605 may be characterized by a surface that is beveled or chamfered from the first surface 236 toward the first groove 240. In an embodiment, a chamfered profile may be formed that may retain at least a portion of the first inner sidewall 605 along the first surface 236, the first surface 236 being available for coupling with the spacer 230 previously discussed. The chamfer may also provide further lateral spacing to prevent leakage at the first surface between the first groove 240 and the central passage 238. The hole 606 may be defined through the chamfered portion and may be defined at an angle, such as at a right angle to the plane of the chamfered portion, or at some other angle through the first inner side wall 605.

The mixing manifold 235 may define a second groove 241, the second groove 241 formed radially outward from the first groove 240. In some embodiments, the second groove 241 may also be annular, and the central passage 238, the first groove 240, and the second groove 241 may be concentrically aligned about a central axis through the mixing manifold 235. The second groove 241 may be fluidly coupled with the port 239 via the channel 243 previously described. The channel 243 may extend to one or more locations within the second groove 241 and may open into the second groove 241 from the base of the groove, although in other embodiments the channel 243 may open into the groove 241 through the side walls of the groove. By passing under the second grooves 241, the depth of the second grooves 241 may be minimized, which may reduce the volume of the formed channels and may limit the diffusion of the delivered precursor to increase the uniformity of delivery.

The second groove 241 may be defined between a first outer sidewall 610, which may alternatively be a second inner sidewall, and an outer radius, which may alternatively be defined by the body of the mixing manifold 235. In an embodiment, the first exterior sidewall 610 may define each of a first groove 240 and a second groove 241 along the first surface 236 of the mixing manifold 235. The first outer sidewall 610 may be characterized by a sloped or chamfered profile along the first surface 236 on a side of the first outer sidewall proximate to the second groove 241, which profile is similar to the profile of the first inner sidewall 605. The first exterior side wall 610 may also define a plurality of apertures 608 defined through the wall to provide a fluid pathway between the second groove 241 and the first groove 240. The hole 608 may be defined anywhere along the first outer side wall 610 or through the first outer side wall 610 and may be defined through a chamfered portion, similar to a hole through the first inner side wall 605. Thus, precursor delivered through the port 239 may flow into the second groove 241, may pass through the hole 608 into the first groove 240, and may pass through the hole 606 into the central passage 238, where it may mix with precursor delivered through the adapter 220.

The aperture 608 may include any number of apertures defined through the first outer side wall 610, and the aperture 606 may include any number of apertures defined through the first inner side wall 605. In some embodiments, the number of apertures through each wall may not be equal. For example, in some embodiments, the number of holes 606 through the first inner side wall 605 may be greater than the number of holes 608 through the first outer side wall, and in some embodiments, the number of holes 606 may be twice or more the number of holes 608. Additionally, the holes 608 may be radially offset from the holes 606 such that no hole 608 is in line with any hole 606 by a radius extending from the central axis of the mixing manifold 235. This hole and channel design may provide for recursive flow through the mixing manifold, thereby improving delivery of additional precursor into the central channel 238, and may provide for more uniform delivery through each hole 606. The mixing manifold 235 may also define an additional groove 615, which additional groove 615 may be radially outward of the second groove 241 and may be configured to receive an elastomeric element or an o-ring.

Fig. 7 illustrates a schematic cross-sectional view of mixing manifold 235 through line B-B of fig. 6, in accordance with some embodiments of the present technique. The cross-section shows the holes 608 as they are defined through the first outer sidewall 610 to provide a fluid pathway from the second groove 241 to the first groove 240. Additionally, fig. 7 illustrates embodiments in which the holes 608 are spaced apart from each other by a full diameter through the first outer sidewall. The holes 608 are also generally spaced apart such that the ports 239 are equally spaced between the two holes 608. The previously described channel 243 may enter the second groove 241 at a similar location to be an equal or substantially equal distance from each hole 608.

Fig. 8 illustrates a schematic cross-sectional view of mixing manifold 235 through line C-C of fig. 6, in accordance with some embodiments of the present technique. The cross-section shows the holes 606 as they are defined through the first inner side wall 605 to provide a fluid pathway from the first groove 240 to the central channel 238.

Holes

606 and 608 may extend through the chamfered portions of the first inner and outer side walls, respectively, and may extend at an angle perpendicular to the chamfer angle, or at some other oblique angle. By including a slope angle through a feature, such as first outer sidewall 610, delivery may provide for further distribution of precursor flow before it rises to flow through the next set of holes. This may also limit the effectiveness of the machining to form the hole or otherwise damage the first surface 236. Mixing manifold 235 may provide a design that provides for more uniform mixing of the precursors with one or more precursors extending through central passage 238.

Fig. 9 illustrates operations of a method 900 of delivering precursors through a processing chamber in accordance with some embodiments of the present technique. The method 900 may be performed in the system 200 and may allow for improved precursor mixing outside the chamber while protecting components from etchant. While components of the chamber may be exposed to etchants that may cause wear over time, the present techniques may limit these components to those that may be more easily replaced and repaired. For example, the present techniques may limit exposure of internal components of the remote plasma unit, which may allow for specific protection to be applied to the remote plasma unit.

The method 900 may include forming a remote plasma of a fluorine-containing precursor in operation 905. Precursors may be delivered to a remote plasma unit to be dissociated to generate plasma effluents. In embodiments, the remote plasma unit may be coated or lined with an oxide or other material that can withstand contact with the fluorine-containing effluent. In embodiments, no other etchant precursor may be delivered by the remote plasma unit, other than the carrier gas, which may protect the unit from damage and allow the plasma power to be adjusted to provide a particular dissociation of the precursor, as this may be beneficial for the particular process being performed. Other embodiments configured to generate plasma effluents of different etchants may be lined with different materials, which may be inert to the precursor or combination of precursors.

At operation 910, plasma effluents of a fluorine-containing precursor may be flowed into an adapter coupled to a remote plasma unit. At operation 915, a hydrogen containing precursor may be flowed into the adapter. The adapter may be configured to provide for mixing of the fluorine-containing precursor and the hydrogen-containing precursor within the adapter to produce a first mixture at operation 920. At operation 925, the first mixture may be flowed from the adapter into a mixing manifold. At operation 930, a third precursor may be flowed into the mixing manifold. The third precursor may include an additional hydrogen-containing precursor, an additional halogen-containing precursor, or other combinations of precursors. The mixing manifold may be configured to perform a second mixing stage of a third precursor with the first mixture, which may produce a second mixture 935.

Subsequently, a second mixture including all three precursors may be delivered from the mixing manifold into the semiconductor processing chamber. As previously mentioned, additional components described elsewhere may be used to control the delivery and distribution of the etchant. It should be understood that the identified precursors are merely examples of suitable precursors for use in the chamber. The chambers and materials discussed throughout this disclosure may be used for any number of other processing operations that may benefit from separating precursors and mixing them before delivering them into the processing chamber.

In the previous description, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. It will be apparent, however, to one skilled in the art that certain embodiments may be practiced without some or with additional details.

Several embodiments have been disclosed, but those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. In addition, many well known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the above description should not be taken as limiting the scope of the present technology.

Where a range of values is provided, it is understood that each intervening value, to the smallest fraction of the units of the lower limit, between the upper and lower limit of that range is also specifically disclosed unless the context clearly dictates otherwise. Any narrower range between any stated value or non-stated intermediate value that is within the stated range and any other stated value or intermediate value within the stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the technology, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a layer" includes a plurality of such layers and reference to "the precursor" includes reference to one or more precursors and equivalents thereof known to those skilled in the art, and so forth.

Furthermore, the words "comprise," "comprising," "include," and "including," when used in this specification and the following claims, are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups thereof.

Claims

1. A semiconductor processing system, comprising:

a processing chamber;

a remote plasma unit coupled with the processing chamber; and

a mixing manifold coupled between the remote plasma unit and the process chamber, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the process chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first groove defined within the first end of the mixing manifold, wherein the first groove is characterized by an inner radius at a first interior sidewall and an outer radius, and wherein the first groove provides a fluid passageway through the first interior sidewall to the central channel.

2. The semiconductor processing system of claim 1, wherein the mixing manifold further comprises a second trench defined within the first end of the mixing manifold, wherein the second trench is positioned radially outward of the first trench, and wherein the port is fluidly coupled with the second trench.

3. The semiconductor processing system of claim 2, wherein the second trench is characterized by an inner radius at a second inner sidewall, and wherein the second inner sidewall further defines an outer radius of the first trench.

4. The semiconductor processing system of claim 3, wherein the second inner sidewall defines a plurality of holes defined through the second inner sidewall and providing fluid access to the first trench.

5. The semiconductor processing system of claim 4, wherein the first inner sidewall defines a plurality of apertures defined through the first inner sidewall and providing fluid access to the central channel.

6. The semiconductor processing system of claim 5, wherein each of the plurality of apertures defined through the second inner sidewall is radially offset from each of the plurality of apertures defined through the first inner sidewall.

7. The semiconductor processing system of claim 1, further comprising an isolator coupled between the mixing manifold and the remote plasma unit.

8. The semiconductor processing system of claim 7, wherein the isolator comprises a ceramic.

9. The semiconductor processing system of claim 1, further comprising an adapter coupled between the mixing manifold and the remote plasma unit.

10. The semiconductor processing system of claim 9, wherein the adapter is characterized by a first end and a second end opposite the first end, wherein the adapter defines a central passage extending partially through the adapter, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing passage defined within the adapter, and wherein the mixing passage is fluidly coupled with the central passage.

11. The semiconductor processing system of claim 10, wherein the adapter comprises an oxide on an inner surface of the adapter.

12. The semiconductor processing system of claim 9, further comprising a spacer positioned between the adapter and the mixing manifold.

13. A semiconductor processing system, comprising:

a remote plasma unit;

a process chamber, the process chamber comprising:

a gas box defining a central passage,

a zone shield coupled to the gas box, wherein the zone shield defines a plurality of apertures therethrough, an

A panel coupled with the divider at a first surface of the panel; and

a mixing manifold coupled with the gas box, wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the process chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold that is fluidly coupled with the central channel defined through the gas box, wherein the mixing manifold defines a port along an exterior of the mixing manifold, wherein the port is fluidly coupled with a first groove defined within the first end of the mixing manifold, wherein the first groove is characterized by an inner radius at a first interior sidewall and an outer radius, and wherein the first groove provides a fluid passageway through the first interior sidewall to the central channel.

14. The semiconductor processing system of claim 13, further comprising a heater externally coupled to the gas box around a mixing manifold coupled to the gas box.

15. The semiconductor processing system of claim 13, wherein the hybrid manifold comprises nickel.

16. The semiconductor processing system of claim 13, further comprising an adapter coupled to the remote plasma unit, wherein the adapter is characterized by a first end and a second end opposite the first end, wherein the adapter defines a central passage extending partially through the adapter from the first end to a midpoint of the adapter, wherein the adapter defines a plurality of access passages extending from the midpoint of the adapter to the second end of the adapter, and wherein the plurality of access passages are radially distributed about a central axis through the adapter.

17. The semiconductor processing system of claim 16, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing channel defined within the adapter, and wherein the mixing channel extends through a central portion of the adapter toward the second end of the adapter.

18. The semiconductor processing system of claim 16, wherein the adapter defines a port through an exterior of the adapter, wherein the port is fluidly coupled with a mixing channel defined within the adapter, and wherein the mixing channel extends through a central portion of the adapter toward the midpoint of the adapter to fluidly enter the central channel defined by the adapter.