JP6736720B1 - Semiconductor processing chamber Multi-stage mixing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a uniform etchant on a wafer or a substrate. A semiconductor processing system includes a processing chamber and a remote plasma unit coupled to the processing chamber. It also includes a mixing manifold 235 coupled between the remote plasma unit and the processing chamber. The mixing manifold is characterized by a first end 236 and a second end 237 opposite the first end and is coupled to the processing chamber at the second end. The mixing manifold defines a central channel 238 through the mixing manifold and a port 239 along the exterior of the mixing manifold. The port is fluidly coupled to a first trench 240 defined within the first end of the mixing manifold. The first trench is characterized by an inner radius and an outer radius at the first inner sidewall and provides fluid access through the first inner sidewall to the central channel. [Selection diagram] Figure 2

Description

The present technology relates to semiconductor systems, processes, and equipment. More specifically, the present technology relates to systems and methods for delivering precursors into systems and chambers.

Integrated circuits are enabled by the process of fabricating intricately patterned layers of material on the surface of a substrate. Fabrication of patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern with photoresist to an underlying layer, thinning the layer, or thinning the lateral dimensions of features already on the surface. In many cases, it is desirable to have one material etch faster than another, for example having a pattern transfer process or an etching process that facilitates removal of individual materials. Such an etching process is said to be selective for the first material. Due to the variety of materials, circuits, and processes, etching processes have been developed that have selectivity for various materials.

The etching process may be referred to as wet or dry, depending on the materials used in the process. The wet HF etch removes silicon oxide preferentially over other dielectrics and materials. However, wet processes are difficult to penetrate into some constrained trenches and can sometimes deform the remaining material. Dry etching processes can penetrate complex features and trenches, but may not provide an acceptable top-to-bottom profile. As device sizes continue to shrink in next generation devices, the way the system delivers precursors into and through the chamber can have an increasing impact. Chamber design and system settings can play an important role in the quality of manufactured devices, as uniformity of processing conditions is becoming increasingly important.

Therefore, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. The present technology addresses these and other needs.

An exemplary semiconductor processing system includes a processing chamber and may include a remote plasma unit coupled with the processing chamber. The exemplary system may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold is characterized by a first end and a second end opposite the first end and may be coupled to the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold and define ports along the exterior of the mixing manifold. The port may be fluidly coupled to a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius and an outer radius at the first inner sidewall and provide fluid access through the first inner sidewall to the central channel.

In some embodiments, the mixing manifold can also include a second trench defined within the first end of the mixing manifold. The second trench is located radially outward from the first trench and the port can be fluidly coupled to the second trench. The second trench may be characterized by an inner radius at the second inner sidewall. The second inner sidewall may also define the outer radius of the first trench. The second inner sidewall may define a plurality of apertures defined therethrough that provide fluid access to the first trench. The first inner sidewall may define a plurality of apertures defined therethrough to provide fluid access to the central channel. Each aperture in the plurality of apertures defined through the second inner sidewall is radially offset from each aperture in the plurality of apertures defined through the first inner sidewall. sell.

The system may also include an isolator coupled between the mixing manifold and the remote plasma unit. The isolator may be or may include a ceramic. The system may also include an adapter coupled between the mixing manifold and the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel that extends partially through the adapter. The adapter may define a port through the exterior of the adapter. The port can be fluidly coupled to a mixing channel defined within the adapter. The mixing channel can be fluidly coupled to the central channel. The adapter may include oxide on the interior surface of the adapter. The system can also include a spacer positioned between the adapter and the mixing manifold.

The present technology may also include semiconductor processing systems. The system may include a remote plasma unit. The system can include a processing chamber that can include a gas box that defines a central channel. The system may include a blocker plate associated with the gas box. The blocker plate may define a plurality of apertures through the blocker plate. The system can include a face plate coupled with the blocker plate at a first surface of the face plate. The system may also include a mixing manifold associated with the gas box. The mixing manifold may be characterized by a first end and a second end opposite the first end. The mixing manifold can be coupled to the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold that is fluidly coupled with a central channel defined through the gas box. The mixing manifold may define ports along the exterior of the mixing manifold. The port may be fluidly coupled to a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius and an outer radius at the first inner sidewall. The first trench may provide fluid access to the central channel through the first inner sidewall.

In some embodiments, the system may also include a heater coupled to the exterior of the gas box around a mixing manifold coupled to the gas box. The mixing manifold may be nickel or may include nickel. The system may include an adapter coupled with the remote plasma unit. The adapter may be characterized by a first end and a second end opposite the first end. The adapter may define a central channel that extends partially through the adapter from the first end to the midpoint of the adapter. The adapter may define a plurality of access channels extending from the midpoint of the adapter toward the second end of the adapter. The plurality of access channels are distributed radially around the central axis through the adapter. The adapter may define a port through the exterior of the adapter. The port can be fluidly coupled to a mixing channel defined within the adapter. The mixing channel may extend through the central portion of the adapter and toward the second end of the adapter. The adapter may define a port through the exterior of the adapter. The port can be fluidly coupled to a mixing channel defined within the adapter. The mixing channel may extend through the central portion of the adapter towards the midpoint of the adapter and fluidly access the central channel defined by the adapter.

The technology may also include a method of delivering a precursor through a semiconductor processing system. The method can include forming a plasma of a fluorine-containing precursor in a remote plasma unit. The method can include flowing a plasma emission of a fluorine-containing precursor into the adapter. The method can include flowing a hydrogen-containing precursor into the adapter. The method can include mixing a hydrogen-containing precursor with a plasma emission to produce a first mixture. The method can include flowing the first mixture through a mixing manifold. The method may include flowing a third precursor into the mixing manifold. The method can include mixing a third precursor with a first mixture to produce a second mixture. The method can also include flowing the second mixture into the processing chamber.

Such techniques may provide numerous advantages over conventional systems and techniques. For example, the technology may utilize a limited number of components compared to conventional designs. In addition, by utilizing components that generate etchant species outside the chamber, mixing and delivery to the substrate can be provided more uniformly than conventional systems. These and other embodiments, along with numerous advantages and features, are described in further detail in conjunction with the following description and accompanying drawings.

A further understanding of the nature and advantages of the disclosed technology may be realized by reference of the remaining portions of the specification and the drawings.

FIG. 3b shows a top view of an exemplary processing system according to some embodiments of the present technology. FIG. 3b shows a schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology. FIG. 6b shows a schematic partial bottom view of an isolator according to some embodiments of the present technology. FIG. 3b shows a schematic partial top view of an adapter according to some embodiments of the present technology. FIG. 3B shows a schematic cross-sectional view of an adapter through line AA of FIG. 2 according to some embodiments of the present technology. FIG. 3b shows a schematic perspective view of a mixing manifold according to some embodiments of the present technology. 7 illustrates a schematic cross-sectional view of a mixing manifold through line BB of FIG. 6 according to some embodiments of the present technology. 7 shows a schematic cross-sectional view of a mixing manifold through line C-C of FIG. 6 according to some embodiments of the present technology. 6 illustrates steps in a method of providing a precursor through a processing system, according to some embodiments of the present technology.

Some of the figures are included as schematic diagrams. It should be understood that the drawings are for illustration purposes and should not be considered to be scaled unless specifically stated to be scaled. Furthermore, the figures are provided as schematic diagrams for ease of understanding and may not include all aspects or information as compared to realistic representations and include exaggerated materials for illustrative purposes. There is.

In the accompanying drawings, similar components and/or features may have the same reference numerals. Further, various components of the same type can be distinguished by adding a letter after the reference sign that distinguishes between similar components. Where only the first reference sign is used in the description, the description is applicable to any similar component having the same first reference sign, regardless of the letter.

The present technology includes a semiconductor manufacturing system, a chamber, and components for performing a semiconductor manufacturing process. Many dry etching processes performed during semiconductor manufacturing may include multiple precursors. When energized and combined in various ways, these etchants may be applied to the substrate, removing or modifying the sides of the substrate. Conventional processing systems can provide precursors for deposition or etching and the like in multiple ways. One method of providing the enhanced precursor is to provide all of the precursor through a remote plasma unit prior to providing the precursor, such as a wafer, through the processing chamber for processing. However, a problem with this process is that different precursors are reactive with different materials, which can cause damage to the remote plasma units or components that supply the precursors. For example, the strengthened fluorine-containing precursor reacts with the aluminum surface but not with the oxide surface. The enhanced hydrogen-containing precursor does not react with the aluminum surface in the remote plasma unit, but can react with and remove the oxide coating. Therefore, if the two precursors are fed together through a remote plasma unit, they can damage the coating or liner within the unit. In addition, the power with which the plasma is ignited can affect the process being performed due to the amount of dissociation produced. For example, some processes benefit from large amounts of dissociation for hydrogen-containing precursors, but lesser amounts of dissociation for fluorine-containing precursors may allow for more controlled etching.

Conventional processing may also supply one precursor through a remote plasma device for plasma processing, or may supply a second precursor directly to the chamber. However, a problem with this process is that the precursors are difficult to mix, do not provide adequate control over etchant generation, and may not provide a uniform etchant on the wafer or substrate. This may result in the process not performing uniformly across the surface of the substrate, which may cause device problems as patterning and formation continue.

The present technique mixes the precursors prior to delivery into the chamber, while having only one etchant precursor delivered through the remote plasma unit, but multiple precursors, such as carrier gas or other etchant precursors. These problems may be overcome by utilizing components and systems configured to allow the precursor to also flow through the remote plasma unit. Certain bypass schemes may thoroughly mix the precursors before feeding them into the processing chamber and provide intermediate mixing as each precursor is added to the system. As a result, uniform processing can be executed while protecting the remote plasma unit. Chambers of the present technology may also include component structures that maximize thermal conductivity through the chamber and facilitate maintenance by coupling the components in a particular manner.

While the rest of the disclosure will routinely identify a particular etching process utilizing the disclosed technology, the systems and methods are equally applicable to deposition and cleaning processes such as may occur in the chambers described. Will be easily understood. Therefore, this technique should not be considered so limited for use in etching processes only. The present disclosure describes one possible system and chamber that can be used with the present technology to perform certain removal steps before describing aspects and variations of components to this system according to embodiments of the present technology. Will be done.

FIG. 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment. In the drawing, a pair of front opening unified pods (FOUPs) 102 are received by a robot arm 104, placed in one of the substrate processing chambers 108a-108f, and positioned in tandem compartments 109a-109c. Substrates of various sizes placed in the low pressure holding area 106 are provided. The second robot arm 110 may be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-108f. Each of the substrate processing chambers 108a-108f includes cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, precleaning, degassing and orientation. , And other substrate processing, can be equipped to perform a number of substrate processing steps, including the dry etching processes described herein.

Substrate processing chambers 108a-108f may include one or more system components for depositing, annealing, curing and/or etching a dielectric film on a substrate wafer. In one configuration, two pairs of processing chambers, such as 108c-108d and 108e-108f, are used to deposit the dielectric material on the substrate, and a third pair of processing chambers, such as 108a-108b, is used. It can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, eg, 108a-108f, can be configured to etch the dielectric film on the substrate. Any one or more of the described processes may be carried out in chamber(s) separate from the manufacturing system shown in various embodiments. It will be appreciated that further configurations of deposition, etching, annealing, and curing chambers for the dielectric film are contemplated by system 100.

FIG. 2 shows a schematic cross-sectional view of an exemplary processing system 200 according to embodiments of the present technology. The system 200 can include a processing chamber 205 and a remote plasma unit 210. The remote plasma unit 210 can be coupled to the processing chamber 205 using one or more components. The remote plasma unit 210 may be coupled with one or more of an isolator 215, an adapter 220, a spacer 230, and a mixing manifold 235. The mixing manifold 235 may be coupled to the top of the processing chamber 205 or the inlet to the processing chamber 205.

The isolator 215 may be coupled to the remote plasma unit 210 at a first end 211 and the adapter 220 at a second end 212 opposite the first end 211. Through the isolator 215, one or more channels may be defined. At the first end 211, an opening or port to the channel 213 can be defined. Channel 213 may be defined centrally within isolator 215 and may be characterized by a first cross-sectional area in a direction perpendicular to a central axis through isolator 215, which may be in the direction of flow from remote plasma unit 210. Good. The diameter of the channel 213 can be equal or common to the exit port from the remote plasma unit 210. Channel 213 may be characterized by a length from first end 211 to second end 212. The channel 213 may extend the entire length of the isolator 215, or a length less than the length from the first end 211 to the second end 212. For example, the channel 213 extends to less than half the length from the first end 211 to the second end 212, and the channel 213 extends to the middle of the length from the first end 211 to the second end 212. , The channel 213 extends to more than half the length of the first end 211 to the second end 212, or the channel 213 extends the length of the isolator 215 from the first end 211 to the second end 212. Can extend up to about half of

The channel 213 may transition from a bottom of the channel 213 defined in the isolator 215 to a smaller aperture 214 extending through the second end 212. For example, although one such smaller aperture 214 is shown in FIG. 2, it should be understood that any number of apertures 214 may be defined from channel 213 through isolator 215 to second end 212. is there. The smaller apertures may be distributed around the central axis of the isolator 215, as discussed further below. The smaller apertures 214 are characterized by a diameter of less than or equal to about 50% of the diameter of the channel 213, less than or equal to about 40%, less than or equal to about 30%, less than or equal to about 20%, less than or equal to about 10%, or less than or equal to about 5% of the diameter of the channel 213. % Or less than the diameter of the channel 213. Isolator 215 may also define one or more trenches defined under isolator 215. The trench may be or include one or more annular recesses defined in the isolator 215 to allow seating of O-rings or elastomeric elements and coupling with the adapter 220.

The isolator 215 can be a low thermal conductivity material, while other components of the processing system can be metals or thermally conductive materials. In some embodiments, the isolator 215 can be or include a ceramic, plastic, or other thermal insulation component configured to provide a thermal isolation between the remote plasma unit 210 and the chamber 205. .. In operation, remote plasma unit 210 may cool or operate at a lower temperature for chamber 205, while chamber 205 may heat or operate at a higher temperature for remote plasma unit 210. Providing a ceramic or adiabatic isolator 215 may prevent or limit thermal, electrical, or other interference between components.

The adapter 220 may be coupled to the second end 212 of the isolator 215 in embodiments. Adapter 220 may be characterized by a first end 217 and a second end 218 opposite the first end. Adapter 220 may define one or more central channels through a portion of adapter 220. For example, from the first end 217, the central channel 219, or the first central channel, extends at least partially through the adapter 220 toward the second end 218 and through any length of the adapter 220. Can be extended. Like the central channel 213 of the isolator 215, the central channel 219 extends less than half the length through the adapter 220, approximately half the length of the adapter 220, or more than half the length of the adapter 220. sell. The central channel 219 can be characterized by a diameter that is related to, equal to, or substantially equal to the diameter of the channel 213. Further, the central channel 219 is characterized by a diameter that is shaped to surround the apertures 214 of the isolator 215, and in embodiments, is defined by a radius from the central axis through the isolator 215 to an outer edge of the diameter of each aperture 214. Can be characterized by the diameter of the shape that exactly surrounds the aperture 214, such as by being characterized by a radius that is substantially similar or equivalent to. For example, the central channel 219 can be characterized by a circular or oval shape characterized by one or more diameters that can extend tangentially to the outer portion of each aperture 214.

The adapter 220 may define a bottom of the central channel 219 within the adapter 220, thereby defining a transition from the central channel 219 to a plurality of apertures 225 extending at least partially through the adapter 220. The transition can occur at a midpoint through the adapter, at any location along the length of the adapter. For example, the aperture 225 may extend from the base of the central channel 219 toward the second end 218 of the adapter 220 or may extend completely through the second end 218. In another embodiment, the aperture 225 extends through the middle portion of the adapter 220 from a first end accessing the central channel 219 to a second end accessing the second central channel 221 to provide the adapter 220. May extend through the second end 218 of the. The central channel 221 is characterized by a similar diameter to the central channel 219, and in other embodiments the diameter of the central channel 221 may be above or below the diameter of the central channel 219. The aperture 225 is characterized by a diameter that is less than or equal to about 50% of the diameter of the central channel 219 and that is less than or equal to about 40%, less than about 30%, less than about 20%, less than about 10%, or less than about 5% of the diameter of the central channel 219. % Or less than the diameter of the central channel 219.

Adapter 220 may define a port 222 through the exterior of adapter 220, such as along a sidewall or side portion of adapter 220. Port 222 may provide access for supplying a first mixed precursor to be mixed with the precursor provided from remote plasma unit 210. The port 222 may provide fluid access to the mixing channel 223 that extends at least partially through the adapter 220 toward the central axis of the adapter 220. The mixing channel 223 extends at any angle within the adapter 220, and in some embodiments, the first portion 224 of the mixing channel 223 extends through the adapter 220 in the direction of flow and perpendicular to the central axis. However, the first portion 224 can advance through the adapter 220 toward the central axis at a tilt or descent angle. The first portion 224 may intersect beyond the apertures 225 distributed around the central axis of the adapter 220, similar to the apertures 214 of the isolator 215 described above. This distribution allows the first portion 224 to extend beyond the aperture 225 toward the central axis of the adapter 220 without crossing or intersecting the aperture 225.

The first portion 224 of the mixing channel 223 may transition to the second portion 226 of the mixing channel 223 which travels vertically through the adapter 220. In some embodiments, the second portion 226 can extend along and be axially aligned with the central axis through the adapter 220. The second portion 226 may also extend through an intermediate portion of circular or other geometric shape that extends through the central axis of each aperture 225. The second portion 226 may extend with the aperture 225 to the second central channel 221 and be fluidly coupled thereto. Thus, the precursor delivered through port 222 may be mixed with the precursor delivered through remote plasma unit 210 in the lower portion of adapter 220, in some embodiments. This may constitute the first stage of mixing within the components between the remote plasma unit 210 and the processing chamber 205.

An alternative embodiment in which the second portion 226 of the mixing channel 223 extends vertically in the opposite direction is further shown in FIG. For example, as described above, the second portion 226a may extend vertically toward the second central channel 221 for mixing within this region. Alternatively, the second portion 226b may extend vertically toward the first central channel 219. Although shown hidden in view, the second portion 226b is shown as a separate embodiment, and an adapter in accordance with the present technique may be used at the first end 217 or the second end 218 of the adapter 220. It may include any version of the second portion 226 extending toward. The mixture of second precursors delivered through port 222, when delivered in a direction toward first central channel 219, occurs within the first portion of adapter 220 and is delivered through port 222. May be flowed through the plurality of apertures 225 with the precursor supplied from the remote plasma unit 210 to provide improved uniformity. When fed towards the second central channel 221, incomplete mixing may occur due to the flow of precursors, increasing the central concentration of precursor delivered through the central channel 221. When supplied towards the first central channel 219, the precursor through the port 222 is forced by the downward flow from the remote plasma unit 210 and/or the pressure through the chamber so that the precursor within the first central channel 219 is May be distributed in the radial direction at, and may progress more uniformly through the apertures 225.

Adapter 220 may be made of a material similar to isolator 215 or may be made of a different material than isolator 215. In some embodiments, the isolator may include a ceramic or insulating material, while the adapter 220 is aluminum, including oxides of aluminum, treated aluminum on one or more surfaces, or some other material. May be made. For example, the inner surface of adapter 220 may be coated with one or more materials to protect adapter 220 from damage caused by plasma emissions from remote plasma unit 210. The inner surface of the adapter 220 is inert to plasma emissions of fluorine and can be anodized in a range of materials including, for example, yttrium oxide or barium titanate. Adapter 220 can also be configured to define trenches 227 and 228, which are annular trenches, to seat O-rings or other sealing elements.

The spacer 230 may be combined with the adapter 220. The spacer 230 is or includes ceramic and may be a material similar to either the isolator 215 or the adapter 220 in embodiments. The spacer 230 may define a central aperture 232 through the spacer 230. The central aperture 232 may be characterized by a taper through the spacer 230 from the portion of the adapter 220 proximate the second central channel 221 to the opposite side of the spacer 230. The portion of the central aperture 232 proximate to the second central channel 221 may be characterized by a diameter equal to or similar to the diameter of the second central channel 221. The central aperture 232 is characterized by a taper ratio of about 10% or more along the length of the spacer 230, and in embodiments, about 20% or more, about 30% or more, about 40% or more, about 50% or more, Characterized by a taper rate of about 60% or more, about 70% or more, about 80% or more, about 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or more. sell.

The mixing manifold 235 may be coupled to the spacer 230 at a first end 236 or first surface and may be coupled to the chamber 205 at a second end 237 opposite the first end 236. The mixing manifold 235 may define a central channel 238 that extends from the first end 236 to the second end 237 and is configured to supply the precursor into the processing chamber 205. The mixing manifold 235 can also be configured to incorporate additional precursor into the mixed precursor supplied from the adapter 220. The mixing manifold may provide the second stage of mixing within the system. The mixing manifold 235 may define a port 239 along the exterior of the mixing manifold 235, eg, along a side or sidewall of the mixing manifold 235. In some embodiments, the mixing manifold 235 may define multiple ports 239 on either side of the mixing manifold 235 to provide additional access for precursor delivery to the system. The mixing manifold 235 may also define one or more trenches in the first surface 236 of the mixing manifold 235. For example, the mixing manifold 235 may define a first trench 240 and a second trench 241 that may provide fluid access from the port 239 to the central channel 238. For example, port 239 may provide access to channel 243, which may provide fluid access to one or both trenches, such as from below the trench as shown. The trenches 240, 241 will be described in more detail below.

The central channel 238 may be characterized by a first portion 242 extending from the first end 236 to the flared portion 246. The first portion 242 is characterized by a cylindrical profile and may be characterized by a diameter similar or equal to the outlet of the central aperture 232 of the spacer 230. The flare portion 246, in embodiments, is about 10% or more, about 20% or more, about 30% or more, about 40% or more, about 50% or more, about 60% or more, about 70% or more, about 80% or more, about. It may be characterized by a flare rate of 90% or more, about 100% or more, about 150% or more, about 200% or more, about 300% or more, or more. In embodiments, the mixing manifold 235 may be made of a similar material to the adapter 220 or a different material. For example, the mixing manifold 235 may include nickel, which may provide adequate protection against precursors that may contact all parts of the mixing manifold. Unlike the prior art, the fluorine plasma emissions may already be mixed upstream of the mixing manifold, so the problems associated with recombination may not occur. For example, without wishing to be bound by any particular theory, nickel catalyzes the recombination of fluorine radicals into diatomic fluorine, which may contribute to polysilicon loss in the prior art. When the fluorine wastewater is mixed before it is fed to nickel, nickel-plated, or coated components, the concentration of the fluorine wastewater is reduced, further protecting the polysilicon features at the substrate level, limiting this process. sell.

Flare portion 246 may provide an outlet for precursors that are fed through mixing manifold 235 through outlet 247 and through second end 237. The section of the central channel 238 through the mixing manifold 235 may be configured to provide proper or thorough mixing of the precursors to be supplied to the mixing manifold prior to providing the mixed precursors into the chamber 205. .. Unlike prior art, by mixing the etchants or precursors prior to delivery to the chamber, the system can provide etchants with uniform properties before being distributed around the chamber and substrate. Further, by providing multi-stage mixing, more uniform mixing can be provided for each of the precursors. In this way, the process performed using the present technique may achieve more uniform results across the substrate surface. The illustrated stack of components also limits particle buildup by reducing the number of elastomeric seals contained in the stack, producing particles that can degrade over time and affect the process being performed. You can.

Chamber 205 may include a number of components in a stacked arrangement. The chamber stack may include a gas box 250, a blocker plate 260, a face plate 270, an optional ion suppression element 280, and a lid spacer 290. These components can be utilized to distribute the precursor or set of precursors through the chamber and evenly deliver the etchant or other precursor to the substrate for processing. In embodiments, these components may be laminates, each of which at least partially defines the exterior of chamber 205.

The gas box 250 may define a chamber inlet 252. A central channel 254 can be defined through the gas box 250 to deliver the precursor into the chamber 205. The inlet 252 may be aligned with the outlet 247 of the mixing manifold 235. In embodiments, the inlet 252 and/or the central channel 254 can be characterized by similar diameters. The central channel 254 may be configured to extend through the gas box 250 and supply one or more precursors within a volume 257 defined by the gas box 250 from above. The gas box 250 may include a first surface 253, such as a top surface, and a second surface 255, such as the bottom surface of the gas box 250, opposite the first surface 253. In embodiments, the top surface 253 can be a flat or substantially flat surface. The heater 248 may be coupled to the top surface 253.

In embodiments, the heater 248 may be configured to heat the chamber 205 and may conductively heat each lid stack component. The heater 248 can be any type of heater including a fluid heater, an electric heater, a microwave heater, or other device configured to conductively supply heat to the chamber 205. In some embodiments, the heater 248 may be, or may include, an electric heater formed in an annular pattern around the first surface 253 of the gas box 250. The heater may be defined over the gas box 250 and around the mixing manifold 235. The heater is a plate heater or a resistance element heater configured to supply heat of about 2000 W or more at the maximum, and is about 2500 W or more, about 3000 W or more, about 3500 W or more, about 4000 W or more, about 4500 W or more, about 5000 W or more. , Or more.

The heater 248 is configured to generate a variable chamber component temperature of up to about 50° C. or more, about 75° C. or more, about 100° C. or more, about 150° C. or more, about 200° C. or more, about 250° C. or more, about 250° C. or more. It may be configured to generate chamber component temperatures of 300° C. or higher, or higher. The heater 248 may be configured to raise individual components such as the ion suppression element 280 to any of these temperatures to facilitate processing steps such as annealing. In some processing steps, the substrate is raised toward the ion suppression element 280 for the annealing step and the heater 248 causes the temperature of the heater to reach any of the above specified temperatures or any of the temperatures listed. It may be adjusted so as to increase conductively within the range of or within any temperature range therebetween.

The second surface 255 of the gas box 250 may be combined with the blocker plate 260. Blocker plate 260 may be characterized by a diameter equal to or similar to the diameter of gas box 250. The blocker plate 260 defines a plurality of apertures 263 through the blocker plate 260, only a sample of which is illustrated, allowing the distribution of precursors, such as etchants, from the space 257 and of uniform distribution to the substrate. In order to initiate precursor distribution through the chamber 205. Although only a few openings 263 are shown, it should be understood that blocker plate 260 may have any number of openings 263 defined throughout the structure. Blocker plate 260 may be characterized by a rising annulus 265 at the outer diameter of blocker plate 260 and a descending annulus 266 at the outer diameter of blocker plate 260. The rising annulus 265 may provide structural rigidity to the blocker plate 260 and in embodiments may define the sides or outer diameter of the space 257. Blocker plate 260 may also define the bottom of space 257 from below. The space 257 may allow the precursor to be dispensed from the central channel 254 of the gas box 250 prior to passing through the apertures 263 of the blocker plate 260. The lower annulus 266 may also provide structural rigidity to the blocker plate 260 and, in embodiments, may define the side or outer diameter of the second space 258. Blocker plate 260 may also define the top of space 258 from above, while the bottom of space 258 may be defined from below by face plate 270.

Face plate 270 can include a first surface 272 and a second surface 274 opposite the first surface 272. The face plate 270 may be coupled to the blocker plate 260 at the first surface 272 and engage the descending annular portion 266 of the blocker plate 260. The face plate 270 may define a ledge 273 within the second surface 274 that extends to within the face plate 270 or to a third space 275 at least partially defined by the face plate 270. For example, face plate 270 may define the side or outer diameter of third space 275 as well as the top of space 275 from above, while ion suppression element 280 may define third space 275 from below. Although not shown in FIG. 2, face plate 270 may define multiple channels through the face plate.

The ion suppression element 280 can be positioned proximate to the second surface 274 of the face plate 270 and can be coupled to the face plate 270 at the second surface 274. The ion suppression element 280 can be configured to reduce ion migration into the processing region of the chamber 205 containing the substrate. Although not shown in FIG. 2, the ion suppression element 280 may define a plurality of apertures through the structure. In embodiments, gas box 250, blocker plate 260, face plate 270, and ion suppression element 280 may be bonded together, and in embodiments may be directly bonded together. By directly coupling the components, the heat generated by the heater 248 can be conducted through the components to maintain a particular chamber temperature that is maintained with less variation between components. The ion suppression element 280 may also contact the lid spacer 290 and together define at least partially a plasma processing region in which the substrate is maintained during processing.

FIG. 3 illustrates a schematic partial bottom view of an isolator 215 according to some embodiments of the present technology. As mentioned above, the isolator 215 may define a plurality of apertures 214 extending from the central channel 213 to the second end 212 of the isolator 215. The apertures 214 may be distributed around a central axis passing through the isolator 215 and equidistant from the central axis passing through the isolator 215. The isolator 215 may define any number of apertures 214 that increase migration, distribution, and/or turbulence of precursor flowing through the isolator 215.

FIG. 4 shows a schematic partial top view of an adapter 220 according to an embodiment of the present technology. As mentioned above, the first central channel 219 extends from the first end 217 of the adapter 220 and may extend partially through the adapter. The adapter defines a floor of the central channel having a cylindrical profile and may transition into a plurality of apertures 225 extending through the adapter toward the second end as described above. Similar to apertures 214, apertures 225 can be distributed through adapter 220 about a central axis and positioned equidistantly about the central axis. Adapter 220 defines any number of apertures through the adapter, and in some embodiments may define more apertures than isolator 215. The additional openings can increase mixing with the added precursor. As mentioned above, the mixing channel may supply additional precursor into the first central channel 219 towards the first end of the adapter. In this embodiment, the views of FIGS. 4 and 5 would be reversed.

5 illustrates a schematic cross-sectional view of the adapter 220 through line AA of FIG. 2 according to some embodiments of the present technology. FIG. 5 may show a view through the second central channel 221 showing the exit to the mixing channel through the aforementioned second portion 226. As shown, the second portion 226 can extend between the apertures 225 and extend along the central axis of the adapter 220 toward the second end of the adapter. In addition, as described above, in the embodiment in which the second portion 226 extends toward the first central channel 219, the views of FIGS. 4 and 5 are reversed and the mixing precursor and adapter from the remote plasma unit are reversed. Precursor introduced through port 220 will exit premixed aperture 225.

FIG. 6 shows a schematic perspective view of a mixing manifold 235 according to some embodiments of the present technology. As previously mentioned, the mixing manifold 235 defines a central channel 238 through the mixing manifold and is capable of transporting mixed precursors from the adapter to the processing chamber. The mixing manifold 235 may also include some features that allow the introduction of additional precursor that is mixed with the previously mixed precursor. As mentioned above, one or more ports 239 may provide access for introduction of precursors to the mixing manifold 235. The ports 239 access the channels as shown in FIG. 2 and may extend to one or more of the trenches defined in the first surface 236 of the mixing manifold 235.

The trench may be defined in the first surface 236 of the mixing manifold 235 to form a channel that is at least partially isolated when the mixing manifold is combined with the spacer 230 described above. The first trench 240 may be formed around the central channel 238. The first trench 240 is annular in shape and may be characterized by an inner radius and an outer radius from a central axis passing through the mixing manifold 235. The inner radius may be defined by a first inner sidewall 605 that defines the top of a central channel 238 that extends through the mixing manifold 235. The outer radius of the first trench 240 may be defined by a first outer sidewall 610 located radially outward from the first inner sidewall 605. The first trench 240 may provide fluid access through the first inner sidewall 605 to the central channel 238. For example, the first inner sidewall 605 may define a number of apertures 606 through the first inner sidewall 605. Apertures 606 may be distributed around the first inner sidewall 605 to provide multiple access locations for additional precursor to be delivered into the central channel 238.

The first inner sidewall 605 may be characterized by a beveled or chamfered surface from the first surface 236 toward the first trench 240. In embodiments, a chamfered profile may be formed to keep at least a portion of the first inner sidewall 605 along the first surface 236 available for coupling with the spacer 230 described above. sell. The chamfer may also provide additional lateral spacing to prevent leakage across the first surface between the first trench 240 and the central channel 238. The aperture 606 may be defined through the chamfer, at an angle, such as a right angle to the plane of the chamfer, or at some other angle through the first inner sidewall 605.

The mixing manifold 235 may define a second trench 241 formed radially outward from the first trench 240. The second trench 241 is also annular in shape, and the central channel 238, the first trench 240, and the second trench 241 are, in some embodiments, concentric about a central axis through the mixing manifold 235. Can be aligned. The second trench 241 may be fluidly coupled to the port 239 via the channel 243 described above. The channel 243 may extend to one or more locations within the second trench 241 to access the second trench 241 from the bottom of the trench, although in other embodiments the channel 243 extends through the sidewalls of the trench. The trench 241 can be accessed. Accessing from below the second trench 241 minimizes the depth of the second trench 241, thereby reducing the space of the formed channel and limiting the diffusion of the supplied precursor. This can increase the uniformity of supply.

The second trench 241 may alternatively be defined between the first outer sidewall 610, which is the second inner sidewall, and the outer radius defined by the body of the mixing manifold 235. In embodiments, the first outer sidewall 610 may define each of the first trench 240 and the second trench 241 along the first surface 236 of the mixing manifold 235. The first outer sidewall 610 is also sloped or chamfered along the first surface 236 of the side of the first outer sidewall proximate the second trench 241, similar to the contour of the first inner sidewall 605. Can be characterized by a contour. First outer sidewall 610 may also define a plurality of apertures 608 defined through the wall to provide fluid access between second trench 241 and first trench 240. Apertures 608 are defined anywhere along or through the first outer sidewall 610 and may be defined through chamfers as well as apertures through the first inner sidewall 605. .. Thus, the precursor supplied through port 239 enters the second trench 241, enters the first trench 240 through the aperture 608, enters the central channel 238 through the aperture 606, where the precursor is present. Can be mixed with the precursor supplied through the adapter 220.

Openings 608 include any number of openings defined through first outer sidewall 610, and openings 606 include any number of openings defined through first inner sidewall 605. May be included. In some embodiments, the number of apertures through each wall may not be equal. For example, in some embodiments, the number of apertures 606 through the first inner sidewall 605 may be greater than the number of apertures 608 through the first outer sidewall, and in some embodiments, The number of openings 606 may be twice or more than the number of openings 608. Further, aperture 608 may be radially offset from aperture 606 so that it is not aligned with any aperture 606 through a radius extending from the central axis of mixing manifold 235. This aperture and channel design may provide retrograde flow through the mixing manifold, improving the delivery of additional precursor into the central channel 238 and providing a more uniform delivery through each aperture 606. The mixing manifold 235 may also be configured to define an additional trench 615 radially outward of the second trench 241 to receive an elastomeric element or O-ring.

7 shows a schematic cross-sectional view of the mixing manifold 235 through line BB of FIG. 6 according to some embodiments of the present technology. The cross-sectional view shows the aperture 608 as defined through the first outer sidewall 610 to provide fluid access from the second trench 241 to the first trench 240. In addition, FIG. 7 illustrates some embodiments in which apertures 608 are spaced from each other through the first outer sidewall and facing each other by a total diameter. The apertures 608 are also loosely spaced so that the ports 239 are equidistantly spaced between the two apertures 608. The aforementioned channels 243 may enter the second trenches 241 at similar locations, at equal or substantially equal distances from each aperture 608.

FIG. 8 shows a schematic cross-sectional view of the mixing manifold 235 through line CC of FIG. 6 according to some embodiments of the present technology. The cross-sectional view shows the aperture 606 as defined through the first inner sidewall 605 to provide fluid access from the first trench 240 to the central channel 238. Both aperture 606 and aperture 608 extend through the chamfered portions of the first inner side wall and the first outer side wall, respectively, and may extend at an angle perpendicular to the chamfer angle, or some other tilt angle. .. Inclusion of a tilt angle through a feature such as the first outer sidewall 610 may provide a flow that further distributes the precursor before it rises up to flow through the next set of apertures. This may also limit the effects of machining to create apertures or otherwise damage the first surface 236. The mixing manifold 235 may provide a design that allows for more uniform mixing of the precursor with one or more precursors extending through the central channel 238.

FIG. 9 illustrates steps of a method 900 of delivering a precursor through a processing chamber, according to some embodiments of the present technology. The method 900 may be performed within the system 200 to enable improved precursor mixing outside the chamber while protecting the components from etchant damage. Although chamber components may be exposed to etchants that cause wear over time, the present technique may limit these components to those that can be more easily replaced and repaired. For example, the present technology may limit exposure of internal components of the remote plasma unit, thereby allowing specific protection to be added to the remote plasma unit.

The method 900 may include forming a remote plasma of a fluorine-containing precursor at step 905. The precursor can be supplied to a remote plasma unit to dissociate to produce plasma emissions. In embodiments, the remote plasma unit may be coated or lined with an oxide or other material that is resistant to contact with fluorine-containing wastewater. In embodiments, other than the carrier gas, no other etchant precursors are supplied through the remote plasma unit, thus protecting the unit from damage and the specific precursors being used to benefit the particular process being performed. Adjustment of plasma power may be possible to effect dissociation. Other embodiments configured to produce different etchant plasma emissions may be lined with different materials that are inert to their precursors or combinations of precursors.

At step 910, the plasma emission of the fluorine-containing precursor can be flowed into an adapter associated with the remote plasma unit. At step 915, a hydrogen-containing precursor can be flowed into the adapter. The adapter may be configured to mix the fluorine-containing precursor and the hydrogen-containing precursor within the adapter to produce a first mixture at step 920. At step 925, the first mixture may flow from the adapter into the mixing manifold. At step 930, a third precursor can be flowed into the mixing manifold. The third precursor may include an additional hydrogen-containing precursor, an additional halogen-containing precursor, or a combination of other precursors. The mixing manifold may be configured to perform a second stage of mixing the third precursor and the first mixture to produce a second mixture 935.

Subsequently, a second mixture containing all three precursors can be fed into the semiconductor processing chamber from the mixing manifold. Additional components described elsewhere may be used to control the supply and distribution of etchant as described above. It should be understood that the identified precursors are only examples of suitable precursors for use in the described chambers. The chambers and materials discussed throughout this disclosure may be used in any number of other processing steps that would benefit from separating the precursors and mixing them before feeding them into the processing chamber.

In the preceding description, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that particular embodiments may be practiced without some of these details or with further details.

Although several embodiments have been disclosed, those of skill in the art will understand that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology.

Where a range of values is presented, each intervening value between the upper and lower limits of the range is also specifically disclosed down to the smallest unit of the lower limit, unless the context clearly indicates otherwise. To be understood. Also included are any narrow ranges between any stated or unlisted intervening values in the stated range, and any other recited or intervening value in that stated range. The upper and lower limits of these smaller ranges may individually be included in, or excluded from, the smaller ranges, may include any of the limits, may not include either, or may include both. Each range given is also encompassed within this technical range, subject to any specifically excluded limit in the stated range. Where the stated range includes one or more of the limits, ranges excluding either or both of these included limits are also included.

As used in this specification and the appended claims, the singular forms "a," and "the" include plural referents unless the context clearly dictates otherwise. .. Thus, for example, a reference to “a layer” includes a plurality of such layers, and a reference to “the precursor” includes one or more precursors and the corresponding precursor. Including reference to equivalents known to those of skill in the art, and so on.

Also, “comprise/include (comprise(s))”, “include/comprise”, “contain(s)”, “contain”, “include” The terms (include(s)” and “including” when used in the present specification and claims refer to the presence of stated features, integers, components, or steps. It is intended to be specified, but does not exclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims (15)

A semiconductor processing system,
A processing chamber and a remote plasma unit coupled to the processing chamber;
A mixing manifold coupled between the remote plasma unit and the processing chamber, the mixing manifold being characterized by a first end and a second end opposite the first end. Wherein the mixing manifold is coupled to the processing chamber at the second end, the mixing manifold defining a central channel through the mixing manifold, the mixing manifold defining a port along an exterior of the mixing manifold, The port is fluidly coupled to a first trench defined within the first end of the mixing manifold, the first trench being characterized by an inner radius and an outer radius at a first inner sidewall. A semiconductor processing system wherein the first trench provides fluid access to the central channel through the first inner sidewall. The mixing manifold further comprises a second trench defined within the first end of the mixing manifold, the second trench being radially outward from the first trench and the port being The semiconductor processing system of claim 1, wherein the semiconductor processing system is fluidly coupled to the second trench. The semiconductor process of claim 2, wherein the second trench is characterized by an inner radius at a second inner sidewall, the second inner sidewall further defining the outer radius of the first trench. system. The semiconductor processing of claim 3, wherein the second inner sidewall defines a plurality of apertures defined through the second inner sidewall to provide fluid access to the first trench. system. 5. The semiconductor processing system of claim 4, wherein the first inner sidewall defines a plurality of apertures defined through the first inner sidewall to provide fluid access to the central channel. Each aperture of the plurality of apertures defined through the second inner sidewall is radiused from each of the plurality of apertures defined through the first inner sidewall. The semiconductor processing system of claim 5, wherein the semiconductor processing system is offset in direction. The semiconductor processing system of claim 1, further comprising an isolator coupled between the mixing manifold and the remote plasma unit, the isolator comprising ceramic. An adapter coupled between the mixing manifold and the remote plasma unit,
The semiconductor processing system of claim 1, further comprising a spacer positioned between the adapter and the mixing manifold. The adapter is characterized by a first end and a second end opposite the first end, the adapter defining a central channel extending partially through the adapter; Includes an oxide on an inner surface of the adapter, the adapter defining a port extending through the exterior of the adapter, the port fluidly coupled to a mixing channel defined within the adapter, the mixing The semiconductor processing system of claim 8, wherein a channel is fluidly coupled with the central channel. A semiconductor processing system,
A remote plasma unit,
A processing chamber,
A gas box defining a central channel,
A blocker plate coupled to the gas box, the blocker plate defining a plurality of apertures therethrough;
A processing chamber including a face plate coupled to the blocker plate at a first surface of the face plate;
A mixing manifold coupled to the gas box, the mixing manifold being characterized by a first end and a second end opposite the first end, wherein the mixing manifold is the second end. At the end of the mixing chamber, the mixing manifold defining a central channel through the mixing manifold that is fluidly coupled to the central channel defined through the gas box, the mixing manifold comprising: A port is defined along the exterior of the mixing manifold, the port being fluidly coupled to a first trench defined within the first end of the mixing manifold, the first trench defining a first trench. A semiconductor processing system, characterized by an inner radius and an outer radius at an inner sidewall, wherein the first trench provides fluid access to the central channel through the first inner sidewall. The semiconductor processing system according to claim 10, further comprising a heater connected to the outside of the gas box around a mixing manifold connected to the gas box. The semiconductor processing system of claim 10, wherein the mixing manifold comprises nickel. Further comprising an adapter coupled to the remote plasma unit, the adapter being characterized by a first end and a second end opposite the first end, the adapter having the first end A plurality of access channels defining a central channel extending partially through the adapter from an end to a midpoint of the adapter, the adapter extending from the midpoint of the adapter toward the second end of the adapter. 11. The semiconductor processing system of claim 10, defining a plurality of access channels, the plurality of access channels being radially distributed through the adapter about a central axis. The adapter defines a port extending through the exterior of the adapter, the port being fluidly coupled to a mixing channel defined within the adapter, the mixing channel passing through a central portion of the adapter, the adapter 14. The semiconductor processing system of claim 13, extending toward the second end of the. The adapter defines a port extending through the exterior of the adapter, the port being fluidly coupled to a mixing channel defined within the adapter, the mixing channel passing through a central portion of the adapter, the adapter 14. The semiconductor processing system of claim 13, extending toward the midpoint of and fluidically accessing the central channel defined by the adapter.

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