TWI770024B - 決定粒子及從基板移除之粒子的組成物的方法 - Google Patents

決定粒子及從基板移除之粒子的組成物的方法 Download PDF

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Publication number
TWI770024B
TWI770024B TW106115392A TW106115392A TWI770024B TW I770024 B TWI770024 B TW I770024B TW 106115392 A TW106115392 A TW 106115392A TW 106115392 A TW106115392 A TW 106115392A TW I770024 B TWI770024 B TW I770024B
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TW
Taiwan
Prior art keywords
tip
illumination
detector
spm
sample
Prior art date
Application number
TW106115392A
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English (en)
Chinese (zh)
Other versions
TW201808478A (zh
Inventor
陶德伊凡 羅賓森
博內比Ｊ 阿盧札
基尼斯吉伯特 羅斯勒
大衛 布林克里
傑弗瑞Ｅ 勒克萊兒
Original Assignee
美商瑞弗股份有限公司
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=58772396&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI770024(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US15/160,302 external-priority patent/US10330581B2/en
Application filed by 美商瑞弗股份有限公司 filed Critical 美商瑞弗股份有限公司
Publication of TW201808478A publication Critical patent/TW201808478A/zh
Application granted granted Critical
Publication of TWI770024B publication Critical patent/TWI770024B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/10—Investigating individual particles
    • G01N15/14—Optical investigation techniques, e.g. flow cytometry
    • G01N15/1456—Optical investigation techniques, e.g. flow cytometry without spatial resolution of the texture or inner structure of the particle, e.g. processing of pulse signals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/02—Devices for withdrawing samples
    • G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/02—Monitoring the movement or position of the probe by optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/42—Functionalisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Dispersion Chemistry (AREA)
  • Biochemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Filtering Materials (AREA)
  • Cleaning In General (AREA)
TW106115392A 2016-05-20 2017-05-10 決定粒子及從基板移除之粒子的組成物的方法 TWI770024B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/160,302 2016-05-20
US15/160,302 US10330581B2 (en) 2007-09-17 2016-05-20 Debris removal from high aspect structures

Publications (2)

Publication Number Publication Date
TW201808478A TW201808478A (zh) 2018-03-16
TWI770024B true TWI770024B (zh) 2022-07-11

Family

ID=58772396

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106115392A TWI770024B (zh) 2016-05-20 2017-05-10 決定粒子及從基板移除之粒子的組成物的方法
TW111122279A TWI829197B (zh) 2016-05-20 2017-05-10 奈米尺度計量系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111122279A TWI829197B (zh) 2016-05-20 2017-05-10 奈米尺度計量系統

Country Status (6)

Country Link
EP (2) EP4254065A3 (enExample)
JP (3) JP7244986B2 (enExample)
KR (1) KR102448873B1 (enExample)
DE (1) DE202017007361U1 (enExample)
PL (1) PL3272432T3 (enExample)
TW (2) TWI770024B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107765038B (zh) * 2017-09-13 2020-04-17 上海海洋大学 原子力显微镜基底功能化修饰的固定装置
NL2021345A (en) 2018-04-12 2018-08-22 Asml Netherlands Bv Lithographic apparatus
TW202212829A (zh) * 2020-06-18 2022-04-01 美商布魯克奈米公司 用於從樣品表面機械性清除奈米尺度碎屑的裝置和製造方法
DE102021201669B4 (de) 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer probe

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314578C (zh) * 2000-05-26 2007-05-09 西北大学 利用扫描探针显微镜针尖的方法及其产品或产品的制作方法
JP2008209544A (ja) * 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
US20090032706A1 (en) * 2007-08-02 2009-02-05 Veeco Instruments Inc. Fast-Scanning SPM and Method of Operating Same
JP2009160689A (ja) * 2008-01-07 2009-07-23 Sii Nanotechnology Inc 走査型プローブ顕微鏡を用いた異物除去方法
CN103703415A (zh) * 2011-07-19 2014-04-02 卡尔蔡司Sms有限责任公司 用于分析和去除极紫外光掩模的缺陷的方法和装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW285721B (enExample) * 1994-12-27 1996-09-11 Siemens Ag
JP3417721B2 (ja) * 1995-04-04 2003-06-16 三菱電機株式会社 走査プローブ顕微鏡の使用方法
US5824470A (en) * 1995-05-30 1998-10-20 California Institute Of Technology Method of preparing probes for sensing and manipulating microscopic environments and structures
US6100051A (en) * 1997-06-27 2000-08-08 The United States Of America As Represented By The Department Of Health And Human Services Method utilizing convex geometry for laser capture microdissection
US6353221B1 (en) * 1999-01-29 2002-03-05 Veeco Instruments Inc. Method and apparatus for cleaning a tip of a probe of a probe-based measuring instrument
US6545492B1 (en) * 1999-09-20 2003-04-08 Europaisches Laboratorium Fur Molekularbiologie (Embl) Multiple local probe measuring device and method
JP2002243594A (ja) * 2001-02-14 2002-08-28 Mitsubishi Electric Corp サンプリング用治具及びそれを用いた赤外分光測定法
US6840374B2 (en) * 2002-01-18 2005-01-11 Igor Y. Khandros Apparatus and method for cleaning test probes
JP2006513048A (ja) * 2002-12-09 2006-04-20 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒル ナノ構造を含む材料を集めるおよび分類する方法および関連する物品
US20050208304A1 (en) * 2003-02-21 2005-09-22 California Institute Of Technology Coatings for carbon nanotubes
US7528947B2 (en) * 2003-07-10 2009-05-05 Yissum Research Development Company Of The Hebrew University Of Jerusalem Nanoparticles functionalized probes and methods for preparing such probes
US6840668B1 (en) * 2003-07-25 2005-01-11 Waters Investment Limited Thermogravimetrical analyzer autosampler sealed sample pan
WO2005068137A1 (en) * 2004-01-05 2005-07-28 Lewis & Clark College Self-cleaning adhesive structure and methods
JP2005326250A (ja) * 2004-05-14 2005-11-24 Sumitomo Electric Ind Ltd プローブ用クリーニングシート及びクリーニング方法
CN100484867C (zh) * 2004-10-22 2009-05-06 中国科学院上海应用物理研究所 分离并再放置纳米颗粒的方法
JP2006339472A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Ind Co Ltd プローブカード触針のクリーニング装置およびクリーニング方法
EP2017610B1 (en) * 2006-04-28 2014-10-01 University of Yamanashi Ionizing method and device by electrospray
JP2007298858A (ja) * 2006-05-02 2007-11-15 Hoya Corp マスクブランク用基板の製造方法、マスクブランクの製造方法、及び露光用マスクの製造方法、並びに、マスクブランク、及び露光用マスク
JP4820740B2 (ja) * 2006-12-08 2011-11-24 エスアイアイ・ナノテクノロジー株式会社 加工用ダイヤモンド探針の加工方法
JP2009006378A (ja) * 2007-06-29 2009-01-15 Sii Nanotechnology Inc 微細加工方法及び微細加工装置
US8287653B2 (en) * 2007-09-17 2012-10-16 Rave, Llc Debris removal in high aspect structures
US8003283B2 (en) * 2008-06-18 2011-08-23 Rave Llc System and a method for improved crosshatch nanomachining of small high aspect three dimensional structures by creating alternating superficial surface channels
JP2010170019A (ja) * 2009-01-26 2010-08-05 Toshiba Corp リソグラフィ原版の異物除去方法及びリソグラフィ原版の製造方法
DE102009015713A1 (de) * 2009-03-31 2010-10-14 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren und System zur Teilchenanalyse in Mikrostrukturbauelementen durch eine Isolierung von Teilchen
JP2013068786A (ja) * 2011-09-22 2013-04-18 Toppan Printing Co Ltd フォトマスクの洗浄方法
US8819859B1 (en) * 2013-02-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus of analyzing a sample and a method for the same
GB201402318D0 (en) 2014-02-11 2014-03-26 Oxford Instr Nanotechnology Tools Ltd Method for materials analysis

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314578C (zh) * 2000-05-26 2007-05-09 西北大学 利用扫描探针显微镜针尖的方法及其产品或产品的制作方法
JP2008209544A (ja) * 2007-02-26 2008-09-11 Sii Nanotechnology Inc フォトマスク上の異物の組成分析方法
US20090032706A1 (en) * 2007-08-02 2009-02-05 Veeco Instruments Inc. Fast-Scanning SPM and Method of Operating Same
JP2009160689A (ja) * 2008-01-07 2009-07-23 Sii Nanotechnology Inc 走査型プローブ顕微鏡を用いた異物除去方法
CN103703415A (zh) * 2011-07-19 2014-04-02 卡尔蔡司Sms有限责任公司 用于分析和去除极紫外光掩模的缺陷的方法和装置

Also Published As

Publication number Publication date
JP2017207492A (ja) 2017-11-24
JP7727155B2 (ja) 2025-08-21
PL3272432T3 (pl) 2024-02-19
TW201808478A (zh) 2018-03-16
JP7244986B2 (ja) 2023-03-23
JP2022050485A (ja) 2022-03-30
EP4254065A2 (en) 2023-10-04
TWI829197B (zh) 2024-01-11
KR102448873B1 (ko) 2022-09-30
KR20170131273A (ko) 2017-11-29
JP2023184753A (ja) 2023-12-28
EP3272432B1 (en) 2023-08-23
EP4254065A3 (en) 2023-12-27
EP3272432A3 (en) 2018-04-25
DE202017007361U1 (de) 2020-12-08
TW202241597A (zh) 2022-11-01
EP3272432A2 (en) 2018-01-24

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