TWI769082B - Light emitting apparatus and manufacturing method thereof - Google Patents

Abstract

A light emitting apparatus includes a substrate, a driving circuit, a first insulation layer, a conductive pattern layer, a plating layer, a projection layer and a light emitting element. The driving circuit is disposed on the substrate. The first insulation layer is disposed on the driving circuit and has an opening overlapped with the driving circuit. The conductive pattern layer has a first portion, wherein the first portion of the conductive pattern is disposed on a solid portion of the first insulation layer and located outside the opening of the first insulation layer. The plating layer has at least one raised structure, wherein the at least one raised structure is disposed on and electrically connected to the first portion of the conductive pattern layer. The protection layer is disposed on the first insulation layer and covers the at least one raised structure and the first portion of the conductive pattern layer. The light emitting element is electrically connected to the driving circuit.

Description

Light-emitting device and method of manufacturing the same

The present invention relates to a light-emitting device and a manufacturing method thereof.

Compared with organic light emitting diode backlight modules (or display devices), small light emitting diode backlight modules (or display devices) have the advantages of power saving, high efficiency, and high brightness. The backlight module (or display device) of small light-emitting diodes includes a driving backplane and small light-emitting diodes that are transferred to the pads of the driving backplane.

Generally speaking, in order to increase the light extraction efficiency, a plurality of protrusions are arranged around the pads of the driving backplane; then, a conformal reflective layer is arranged on the plurality of protrusions to form a reflective structure with surface relief . Part of the light beam emitted by the small light-emitting diode will be transmitted to the driving backplane and not easy to emit light, but the reflection structure of the driving backplane can reflect part of the light beam transmitted to the driving backplane to the outside, thereby increasing the light extraction efficiency.

In the process of the above-mentioned driving backplane with a reflective structure, after the reflective layer is formed, an insulating material layer is formed on the reflective layer; then, the insulating material layer is patterned to expose the small light-emitting diodes for bonding the pads; finally, the pads are plated. However, when the insulating material layer is patterned to expose the pads, since part of the insulating material layer is disposed on the undulating reflective structure, part of the insulating material layer above the protrusions is also exposed during the patterning of the insulating material layer. will be removed, leaving part of the reflective layer on the bumps exposed. Therefore, when the pads are plated, part of the reflective layer on the exposed protrusions will also be plated abnormally, which affects the yield of the small light-emitting diode backlight module (or display device).

The present invention provides a light-emitting device with improved yield.

The present invention provides a method for manufacturing a light-emitting device, which can improve the yield of the light-emitting device.

The present invention provides another method for manufacturing a light-emitting device, which can also improve the yield of the light-emitting device.

The light-emitting device of the present invention includes a substrate, a driving circuit, a first insulating layer, a conductive pattern layer, an electroplating layer, a protective layer and a light-emitting element. The driving circuit is arranged on the substrate. The first insulating layer is disposed on the driving circuit and has an opening overlapping the driving circuit. The conductive pattern layer has a first portion, wherein the first portion of the conductive pattern layer is disposed on the body of the first insulating layer and is located outside the opening of the first insulating layer. The electroplating layer has at least one protruding structure, wherein the at least one protruding structure is disposed on the first part of the conductive pattern layer and is electrically connected with the first part of the conductive pattern layer. The protective layer is disposed on the first insulating layer and covers at least one protruding structure and the first part of the conductive pattern layer. The light-emitting element is electrically connected to the driving circuit.

In an embodiment of the present invention, the at least one protruding structure is separated from the first portion of the conductive pattern layer by a distance.

In an embodiment of the present invention, the at least one protruding structure includes a first portion and a second portion, the first portion of the at least one protruding structure is directly connected to the first portion of the conductive pattern layer, and the at least one protruding structure is The second part of the at least one protruding structure is directly connected to the first part of the The distance between the first portion and the first portion of the conductive pattern layer is as described above.

In an embodiment of the present invention, the at least one protruding structure has a convex surface that protrudes away from the substrate.

In an embodiment of the present invention, the at least one protruding structure includes a first portion and a second portion, the first portion of the at least one protruding structure is directly connected to the first portion of the conductive pattern layer, and the at least one protruding structure is The second part of the at least one protruding structure is directly connected to the first part of the The portion has the above-mentioned convex surface.

In an embodiment of the present invention, the above-mentioned conductive pattern layer further has a second portion, the first portion of the conductive pattern layer is separated from the second portion of the conductive pattern layer, and the second portion of the conductive pattern layer passes through the first insulating layer. The opening is electrically connected to the driving circuit, and the light-emitting element is electrically connected to the second portion of the conductive pattern layer.

In an embodiment of the present invention, the above-mentioned light-emitting device further includes a second insulating layer disposed on the first portion of the conductive pattern layer, wherein the second insulating layer has at least one first opening, and at least one protrusion of the electroplating layer The starting structure is filled into at least one first opening of the second insulating layer to be electrically connected to the first portion of the conductive pattern layer.

In an embodiment of the present invention, the above-mentioned electroplating layer further has a connecting portion, the connecting portion of the electroplating layer is separated from at least one protruding structure of the electroplating layer, and the connecting portion of the electroplating layer is electrically connected to the second portion of the conductive pattern layer. , and the light-emitting element is electrically connected to the connection portion of the electroplating layer.

In an embodiment of the present invention, a gap exists between the at least one protruding structure and the first portion of the conductive pattern layer, and the protective layer fills the gap.

In an embodiment of the present invention, the distance between the top surface of the protective layer and the substrate is greater than the distance between the vertex of the at least one protruding structure and the substrate.

A method for manufacturing a light-emitting device according to an embodiment of the present invention includes the following steps: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is disposed on the substrate, and the first insulating layer is disposed on the driving circuit and has a structure overlapping the driving circuit. A conductive material layer is formed on the first insulating layer, wherein the conductive material layer is electrically connected to the driving circuit through the opening of the first insulating layer; a second insulating layer is formed on the conductive material layer, wherein the second insulating layer has exposed At least one first opening of the conductive material layer, and at least one first opening of the second insulating layer is located outside the opening of the first insulating layer; a definition layer is formed on the conductive material layer and the second insulating layer, wherein the definition layer has at least one a first opening and a second opening, and the at least one first opening of the definition layer overlaps the at least one first opening of the second insulating layer; the electroplating process is performed so that the at least one first opening of the defining layer and the second insulating layer At least one protruding structure of the electroplating layer is formed in at least one first opening of the plated layer, and a connecting portion of the electroplating layer is formed in the second opening of the definition layer; after the at least one protruding structure and the connecting portion of the electroplating layer are formed, remove the A definition layer; using at least one protruding structure of the electroplating layer, the second insulating layer and the connecting part of the electroplating layer as a mask, patterning the conductive material layer to form a conductive pattern layer, wherein the conductive pattern layer has a first part and a second part part, the first part of the conductive pattern layer is disposed on the body of the first insulating layer and outside the opening of the first insulating layer, and at least one raised structure of the electroplating layer is disposed on the first part of the conductive pattern layer and is connected with the conductive pattern The first part of the layer is electrically connected, and the connection part of the electroplating layer is arranged on the second part of the conductive pattern layer and is electrically connected with the second part of the conductive pattern layer, and the second part of the conductive pattern layer passes through the first insulating layer. The opening is electrically connected to the driving circuit, and the first part and the second part of the conductive pattern layer are separated from each other; a protective layer is formed to cover at least one raised structure, the second insulating layer and the first part of the conductive pattern layer, wherein the protective layer is formed The layer has an opening to expose the connection part of the electroplating layer; and the light-emitting element is transposed on the substrate, and the light-emitting element is electrically connected to the connection part of the electroplating layer.

A method for manufacturing a light-emitting device according to another embodiment of the present invention includes the following steps: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is disposed on the substrate, and the first insulating layer is disposed on the driving circuit and has a structure overlapping the driving circuit. The opening of the circuit; the conductive pattern layer is formed on the substrate, wherein the first part of the conductive pattern layer is arranged on the body of the first insulating layer, and is located outside the opening of the first insulating layer; on the conductive pattern layer and the first insulating layer forming a definition layer, wherein the definition layer has a plurality of first openings exposing the first portion of the conductive pattern layer; performing an electroplating process to form a plurality of protrusion structures of the electroplating layer in the plurality of first openings of the definition layer, wherein The plurality of raised structures are electrically connected to the first portion of the conductive pattern layer; after forming the plurality of raised structures of the electroplating layer, the definition layer is removed; a protective layer is formed to cover the plurality of raised structures and the conductive pattern layers The first part, wherein the protective layer has an opening overlapping the opening of the first insulating layer; a soldering material is formed in the opening of the protective layer, wherein the soldering material is electrically connected to the driving circuit through the opening of the first insulating layer; The light-emitting element is placed on the substrate, and the light-emitting element and the soldering material are electrically connected.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.

It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable deviation from the particular value as determined by one of ordinary skill in the art, given the measurement in question and the A specific amount of measurement-related error (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately" or "substantially" may be used to select a more acceptable range of deviation or standard deviation depending on optical properties, etching properties or other properties, and not one standard deviation may apply to all properties. .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.

1A to 1H are schematic cross-sectional views illustrating a manufacturing process of a light-emitting device 10 according to an embodiment of the present invention. The manufacturing process of the light-emitting device 10 according to an embodiment of the present invention is described below with reference to FIGS. 1A to 1H .

Referring to FIG. 1A , firstly, a driving circuit DC and a first insulating layer 150 are formed on the substrate 110 , wherein the driving circuit DC is disposed on the substrate 110 , and the first insulating layer 150 is disposed on the driving circuit DC and has an overlap with the driving circuit DC the opening 150a. For example, in this embodiment, the driving circuit DC includes a first metal layer 120, an insulating layer 130 and a second metal layer 140, wherein the first metal layer 120 is disposed on the substrate 110, and the insulating layer 130 is disposed on the first metal layer The layer 120 has an opening 130 a on it. The second metal layer 140 is disposed on the insulating layer 130 and is electrically connected to the first metal layer 120 through the opening 130 a of the insulating layer 130 . In this embodiment, the drive line DC is, for example, a passive drive line. However, the present invention is not limited thereto, and in other embodiments, the driving line DC may also be an active driving line.

1A , then, a conductive material layer 160 is formed on the first insulating layer 150 , wherein the conductive material layer 160 is electrically connected to the driving circuit DC through the opening 150 a of the first insulating layer 150 . In this embodiment, an electroplating process may be performed to form a conductive material layer 160 on the first insulating layer 150 , and the conductive material layer 160 may also be called an electroplating conductive layer. For example, in this embodiment, the material of the conductive material layer 160 may be tin, silver, gold, nickel, copper, other materials, or a combination of at least two of the above, but the invention is not limited thereto.

Referring to FIG. 1B , then, a second insulating layer 170 is formed on the conductive material layer 160 , wherein the second insulating layer 170 has at least one first opening 170 a exposing the conductive material layer 160 , and at least one first opening 170 a of the second insulating layer 170 is formed. An opening 170 a is located outside the opening 150 a of the first insulating layer 150 . For example, in this embodiment, the material of the second insulating layer 170 can be an inorganic material (eg, silicon oxide, silicon nitride, silicon oxynitride, or a stack of at least two of the above materials), an organic material or the above combination, but the present invention is not limited to this.

1C, then, a definition layer 180 is formed on the conductive material layer 160 and the second insulating layer 170, wherein the definition layer 180 has at least a first opening 180a and a second opening 180b, and at least one of the definition layer 180 is defined The first opening 180a overlaps at least one first opening 170a of the second insulating layer 170 . For example, in this embodiment, the material of the definition layer 180 may be photoresist, but the invention is not limited thereto.

Referring to FIG. 1D , then, an electroplating process is performed to form at least one protruding structure 191 of the electroplating layer 190 in at least one first opening 180 a of the definition layer 180 and at least one first opening 170 a of the second insulating layer 170 , and a connecting portion 192 of the electroplating layer 190 is formed in the second opening 180 b of the defining layer 180 . At least one protruding structure 191 of the electroplating layer 190 is separated from the connecting portion 192 of the electroplating layer 190 . At least one protruding structure 191 and the connecting portion 192 of the electroplating layer 190 are electrically connected to the conductive material layer 160 . In this embodiment, the material of the electroplating layer 190 is preferably a conductive material with high reflectivity, such as tin, silver, gold, nickel, copper, other materials or a combination of at least two of the above, but this is not the case in the present invention limited.

1D and FIG. 1E , then, the defining layer 180 is removed to expose part of the second insulating layer 170 and part of the conductive material layer 160 between the raised structures 191 of the electroplating layer 190 and the connecting portion 192 .

1E and FIG. 1F , then, using at least one protruding structure 191 of the electroplating layer 190 , the second insulating layer 170 and the connecting portion 192 of the electroplating layer 190 as a mask, the conductive material layer 160 is patterned to form a conductive pattern Layer 162. Referring to FIG. 1F, the conductive pattern layer 162 has a first portion 162a and a second portion 162b separated from each other. The first portion 162 a of the conductive pattern layer 162 is disposed on the body 152 of the first insulating layer 150 and located outside the opening 150 a of the first insulating layer 150 . At least one protruding structure 191 of the electroplating layer 190 is disposed on the first portion 162 a of the conductive pattern layer 162 and is electrically connected to the first portion 162 a of the conductive pattern layer 162 . The connection portion 192 of the electroplating layer 190 is disposed on the second portion 162b of the conductive pattern layer 162 and is electrically connected to the second portion 162b of the conductive pattern layer 162 . The second portion 162b of the conductive pattern layer 162 is electrically connected to the driving circuit DC through the opening 150a of the first insulating layer 150 . In this embodiment, the second insulating layer 170 is disposed on the first portion 162a of the conductive pattern layer 162, and the protruding structures 191 of the electroplating layer 190 are filled into the first openings 170a of the second insulating layer 170 for electrical connection to the first portion 162 a of the conductive pattern layer 162 .

Referring to FIG. 1F , in this embodiment, the protruding structure 191 is separated from the first portion 162 a of the conductive pattern layer 162 by a distance D. Specifically, in this embodiment, the raised structure 191 includes a first portion 191a and a second portion 191b, the first portion 191a of the raised structure 191 is directly connected to the first portion 162a of the conductive pattern layer 162, and the raised structure The second portion 191b of the raised structure 191 is directly connected to the first portion 191a of the raised structure 191, the width W2 of the second portion 191b of the raised structure 191 is greater than the width W1 of the first portion 191a of the raised structure 191, and the raised structure 191 The second portion 191b of the conductive pattern layer 162 is separated by a distance D from the first portion 162a of the conductive pattern layer 162 . In addition, the protruding structure 191 has a convex surface 191s protruding in the direction z away from the base 110 . Specifically, the second portion 191b of the protruding structure 191 has a convex surface 191s.

Referring to FIG. 1G , then, a protective layer 194 is formed to cover the raised structures 191 , the second insulating layer 170 and the first portion 162 a of the conductive pattern layer 162 . The protective layer 194 has openings 194a. The opening 194 a of the protective layer 194 overlaps the opening 150 a of the first insulating layer 150 . The opening 194 a of the protective layer 194 exposes the connection portion 192 of the plating layer 190 . In this embodiment, the distance D194 between the top surface 194s of the protective layer 194 and the substrate 110 is greater than the distance D191 between the vertex 191p of the protruding structure 191 and the substrate 110 .

Referring to FIG. 1H , then, the light-emitting element 196 is transposed on the substrate 110 , and the light-emitting element 196 is electrically connected to the connection portion 192 of the electroplating layer 190 . In this embodiment, the light emitting element 196 can be electrically connected to the driving line DC through the connecting portion 192 of the electroplating layer 190 and the second portion 162b of the conductive pattern layer 162 . Here, the light emitting device 10 of this embodiment is completed. In this embodiment, at least a part of the light emitting element 196 may overlap the opening 194a of the protective layer 194, but the invention is not limited to this. In this embodiment, the light emitting device 10 can be used as a backlight source. However, the present invention is not limited thereto, and in other embodiments, the light-emitting device 10 can also be used as a self-luminous display device.

It is worth mentioning that the protruding structure 191 of the electroplating layer 190 can reflect the light beam L emitted by the light emitting element 196 to the outside of the light emitting device 10 , so as to improve the light extraction efficiency of the light emitting device 10 . In particular, the protruding structures 191 for reflecting the light beam L are formed by the electroplating process, and are not composed of the protuberances and the reflective layer covering the protuberances. The problem that the reflective layer is exposed and abnormally plated occurs, thereby improving the yield of the light emitting device 10 .

It must be noted here that the following embodiments use the element numbers and part of the contents of the previous embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

2A to 2G are schematic cross-sectional views illustrating a manufacturing process of a light-emitting device 10A according to another embodiment of the present invention. The light emitting device 10A and its manufacturing process shown in FIGS. 2A to 2G are similar to the light emitting device 10 and its manufacturing process shown in FIGS. 1A to 1H . The main difference between the two is that in the embodiment of FIGS. The second insulating layer 170 of the embodiment of FIGS. 1A to 1H . The manufacturing process of the light-emitting device 10A according to the second embodiment of the present invention will be described below with reference to FIGS. 2A to 2G .

Referring to FIG. 2A , first, a driving circuit DC and a first insulating layer 150 are formed on the substrate 110 , wherein the driving circuit DC is disposed on the substrate 110 , and the first insulating layer 150 is disposed on the driving circuit DC and has an overlap with the driving circuit DC the opening 150a. Next, a conductive pattern layer 162 is formed on the substrate 110 , wherein the first portion 162 a of the conductive pattern layer 162 is disposed on the body 152 of the first insulating layer 150 and located outside the opening 150 a of the first insulating layer 150 .

Referring to FIG. 2B , then, a definition layer 180 is formed on the conductive pattern layer 162 and the first insulating layer 150 , wherein the definition layer 180 has a plurality of first openings 180 a exposing the first portion 162 a of the conductive pattern layer 162 .

Referring to FIG. 2C , a plating process is performed to form a plurality of protruding structures 191 of the electroplating layer 190 in the plurality of first openings 180 a of the defining layer 180 , wherein the plurality of protruding structures 191 are electrically connected to the conductive The first portion 162a of the pattern layer 162 . The protruding structure 191 is separated from the first portion 162 a of the conductive pattern layer 162 by a distance D. Specifically, in this embodiment, the raised structure 191 includes a first portion 191a and a second portion 191b, the first portion 191a of the raised structure 191 is directly connected to the first portion 162a of the conductive pattern layer 162, and the raised structure The second portion 191b of the raised structure 191 is directly connected to the first portion 191a of the raised structure 191, the width W2 of the second portion 191b of the raised structure 191 is greater than the width W1 of the first portion 191a of the raised structure 191, and the raised structure 191 The second portion 191b of the conductive pattern layer 162 is separated by a distance D from the first portion 162a of the conductive pattern layer 162 .

2C and FIG. 2D , then, the defining layer 180 is removed to expose the first portion 162 a of the conductive pattern layer 162 and a portion of the driving circuit DC overlapping the opening 150 a of the first insulating layer 150 . In this embodiment, after the definition layer 180 is removed, a gap g exists between the protruding structure 191 and the first portion 162 a of the conductive pattern layer 162 . Specifically, in this embodiment, the gap g exists between the second portion 191b of the protruding structure 191 and the first portion 162a of the conductive pattern layer 162 .

2E, then, a protective layer 194 is formed to cover the plurality of protruding structures 191 and the first portion 162a of the conductive pattern layer 162, wherein the protective layer 194 has an opening 194a overlapping the opening 150a of the first insulating layer 150 . In this embodiment, the protective layer 194 further fills the gap g.

2F , then, a solder material 195 is formed in the opening 194 a of the protective layer 194 , wherein the solder material 195 is electrically connected to the driving circuit DC through the opening 150 a of the first insulating layer 150 . For example, in this embodiment, the solder material 195 may include a nickel-gold film (including nickel/or nickel alloy and gold/or gold alloy), a nickel-palladium-gold film (including nickel/or nickel alloy, palladium/or palladium alloy) and gold/or gold alloy), nickel-palladium-silver-gold film (including nickel/or nickel alloy, palladium/or palladium alloy, silver/or silver alloy and gold/or gold alloy), but the present invention is not limited to this.

Referring to FIG. 2G , next, the light-emitting element 196 is transposed on the substrate 110 , and the light-emitting element 196 and the soldering material 195 are electrically connected. In this embodiment, the light-emitting element 196 is electrically connected to the driving circuit DC through the soldering material 195 . Thus, the light-emitting device 10A of the present embodiment is completed.

10, 10A: Lighting device 110: Base 120: first metal layer 130: Insulation layer 130a, 150a, 194a: openings 140: Second metal layer 150: first insulating layer 152: Entity 160: Conductive material layer 162: Conductive pattern layer 162a: Part 1 162b: Part II 170: Second insulating layer 170a, 180a: first opening 180: Define Layers 180b: Second opening 190: Electroplating layer 191: Raised Structure 191a: Part 1 191b: Part II 191s: Convex 191p: Vertex 192: Connector 194: Protective Layer 194s: Top Surface 195: Welding Materials 196: Light-emitting element D, D191, D194: distance DC: drive line g: gap L: Beam W1, W2: width

1A to 1H are schematic cross-sectional views illustrating a manufacturing process of a light-emitting device 10 according to an embodiment of the present invention. 2A to 2G are schematic cross-sectional views illustrating a manufacturing process of a light-emitting device 10A according to another embodiment of the present invention.

10: Lighting device

110: Base

120: first metal layer

130: Insulation layer

130a, 150a, 194a: openings

140: Second metal layer

150: first insulating layer

152: Entity

162: Conductive pattern layer

162a: Part 1

162b: Part II

170: Second insulating layer

170a: First Opening

190: Electroplating layer

191: Raised Structure

191a: Part 1

191b: Part II

191s: Convex

191p: Vertex

192: Connector

194: Protective Layer

194s: Top Surface

196: Light-emitting element

D, D191, D194: distance

DC: drive line

L: Beam

W1, W2: width

z: direction

Claims (12)

A light-emitting device, comprising: a base; a driving circuit, arranged on the substrate; a first insulating layer disposed on the driving circuit and having an opening overlapping the driving circuit; a conductive pattern layer having a first portion, wherein the first portion of the conductive pattern layer is disposed on a body of the first insulating layer and located outside the opening of the first insulating layer; an electroplating layer having at least one protruding structure, wherein the at least one protruding structure is disposed on the first part of the conductive pattern layer and is electrically connected to the first part of the conductive pattern layer; a protective layer disposed on the first insulating layer and covering the at least one protruding structure and the first portion of the conductive pattern layer; and A light-emitting element is electrically connected to the driving circuit. The light-emitting device of claim 1, wherein the at least one protruding structure is separated from the first portion of the conductive pattern layer by a distance. The light-emitting device of claim 2, wherein the at least one protruding structure includes a first portion and a second portion, and the first portion of the at least one protruding structure is directly connected to the first portion of the conductive pattern layer part, the second part of the at least one protruding structure is directly connected to the first part of the at least one protruding structure, and a width of the second part of the at least one protruding structure is larger than that of the at least one protruding structure A width of the first portion, and the distance is separated between the second portion of the at least one protruding structure and the first portion of the conductive pattern layer. The light-emitting device of claim 1, wherein the at least one protruding structure has a convex surface that protrudes in a direction away from the substrate. The light-emitting device of claim 4, wherein the at least one protruding structure includes a first portion and a second portion, and the first portion of the at least one protruding structure is directly connected to the first portion of the conductive pattern layer part, the second part of the at least one protruding structure is directly connected to the first part of the at least one protruding structure, and a width of the second part of the at least one protruding structure is larger than that of the at least one protruding structure A width of the first portion, and the second portion of the at least one protruding structure has the convex surface. The light-emitting device of claim 1, wherein the conductive pattern layer further has a second portion, the first portion of the conductive pattern layer is separated from the second portion of the conductive pattern layer, and the first portion of the conductive pattern layer is separated from the second portion of the conductive pattern layer. The two parts are electrically connected to the driving circuit through the opening of the first insulating layer, and the light-emitting element is electrically connected to the second part of the conductive pattern layer. The light-emitting device according to claim 6, further comprising: A second insulating layer disposed on the first portion of the conductive pattern layer, wherein the second insulating layer has at least one first opening, and the at least one protruding structure of the electroplating layer fills the second insulating layer The at least one first opening is electrically connected to the first portion of the conductive pattern layer. The light-emitting device of claim 6, wherein the electroplating layer further has a connecting portion, the connecting portion of the electroplating layer is separated from the at least one protruding structure of the electroplating layer, and the connecting portion of the electroplating layer is electrically connected to the second portion of the conductive pattern layer, and the light-emitting element is electrically connected to the connection portion of the electroplating layer. The light-emitting device of claim 1, wherein a gap exists between the at least one protruding structure and the first portion of the conductive pattern layer, and the protective layer fills the gap. The light-emitting device of claim 1, wherein a distance between a top surface of the protective layer and the substrate is greater than a distance between a vertex of the at least one protruding structure and the substrate. A method of manufacturing a light-emitting device, comprising: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is arranged on the substrate, and the first insulating layer is arranged on the driving circuit and has an opening overlapping the driving circuit; forming a conductive material layer on the first insulating layer, wherein the conductive material layer is electrically connected to the driving circuit through the opening of the first insulating layer; A second insulating layer is formed on the conductive material layer, wherein the second insulating layer has at least one first opening exposing the conductive material layer, and the at least one first opening of the second insulating layer is located in the first insulating layer outside the opening of the layer; A defining layer is formed on the conductive material layer and the second insulating layer, wherein the defining layer has at least a first opening and a second opening, and at least one first opening of the defining layer overlaps the second insulating layer of the at least one first opening; A plating process is performed to form at least one raised structure of a plating layer in the at least one first opening of the defining layer and the at least one first opening of the second insulating layer, and the A connecting portion of the electroplating layer is formed in the second opening; After forming the at least one raised structure of the electroplating layer and the connecting portion, removing the defining layer; Using the at least one protruding structure of the electroplating layer, the second insulating layer and the connecting portion of the electroplating layer as a mask, pattern the conductive material layer to form a conductive pattern layer, wherein the conductive pattern layer has a A first part and a second part, the first part of the conductive pattern layer is disposed on a body of the first insulating layer and located outside the opening of the first insulating layer, the at least one protrusion of the electroplating layer The structure is arranged on the first portion of the conductive pattern layer and is electrically connected to the first portion of the conductive pattern layer, and the connection portion of the electroplating layer is arranged on the second portion of the conductive pattern layer and is electrically connected to the first portion of the conductive pattern layer. The second portion of the conductive pattern layer is electrically connected, the second portion of the conductive pattern layer is electrically connected to the driving circuit through the opening of the first insulating layer, and the first portion of the conductive pattern layer and the The second part is separated from each other; forming a protective layer to cover the at least one protruding structure, the second insulating layer and the first portion of the conductive pattern layer, wherein the protective layer has an opening exposing the connection portion of the electroplating layer; and A light-emitting element is transposed on the substrate, and the light-emitting element is electrically connected to the connection portion of the electroplating layer. A method of manufacturing a light-emitting device, comprising: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is arranged on the substrate, and the first insulating layer is arranged on the driving circuit and has an opening overlapping the driving circuit; forming a conductive pattern layer on the substrate, wherein a first portion of the conductive pattern layer is disposed on a body of the first insulating layer and located outside the opening of the first insulating layer; forming a definition layer on the conductive pattern layer and the first insulating layer, wherein the definition layer has a plurality of first openings exposing the first portion of the conductive pattern layer; performing an electroplating process to form a plurality of protruding structures of an electroplating layer in the first openings of the defining layer, wherein the protruding structures are electrically connected to the first portion of the conductive pattern layer; After forming the raised structures of the electroplating layer, removing the defining layer; forming a protective layer to cover the protruding structures and the first portion of the conductive pattern layer, wherein the protective layer has an opening overlapping the opening of the first insulating layer; forming a solder material in the opening of the protective layer, wherein the solder material is electrically connected to the driving circuit through the opening of the first insulating layer; and A light-emitting element is transposed on the substrate, and the light-emitting element and the soldering material are electrically connected.

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