TW202315046A - Light emitting apparatus and manufacturing method thereof - Google Patents

Abstract

A light emitting apparatus includes a substrate, a driving circuit, a first insulation layer, a conductive pattern layer, a plating layer, a projection layer and a light emitting element. The driving circuit is disposed on the substrate. The first insulation layer is disposed on the driving circuit and has an opening overlapped with the driving circuit. The conductive pattern layer has a first portion, wherein the first portion of the conductive pattern is disposed on a solid portion of the first insulation layer and located outside the opening of the first insulation layer. The plating layer has at least one raised structure, wherein the at least one raised structure is disposed on and electrically connected to the first portion of the conductive pattern layer. The protection layer is disposed on the first insulation layer and covers the at least one raised structure and the first portion of the conductive pattern layer. The light emitting element is electrically connected to the driving circuit.

Description

Light emitting device and manufacturing method thereof

The invention relates to a light emitting device and a manufacturing method thereof.

Compared with organic light-emitting diode backlight modules (or display devices), small light-emitting diode backlight modules (or display devices) have the advantages of power saving, high efficiency, and high brightness. The backlight module (or display device) of small light-emitting diodes includes a driving backplane and small light-emitting diodes that are transposed on pads of the driving backplane.

Generally speaking, in order to increase the light extraction efficiency, a plurality of protrusions are arranged around the pads of the driving backplane; then, a conformal reflective layer is arranged on the plurality of protrusions to form a reflective structure with surface relief . Part of the light beam emitted by the small light-emitting diode will be transmitted to the driving backplane and is not easy to emit light, but through the reflective structure of the driving backplane, part of the light beam transmitted to the driving backplane can be reflected outward, thereby increasing the light extraction efficiency.

In the process of driving the backplane with a reflective structure, after the reflective layer is formed, an insulating material layer is formed on the reflective layer; then, the insulating material layer is patterned to expose the small light-emitting diodes for bonding. The pads; finally, the pads are plated. However, when the insulating material layer is patterned to expose the contact pads, since part of the insulating material layer is disposed on the up and down reflective structure, during the process of patterning the insulating material layer, the part of the insulating material layer above the protrusions is also exposed. will be removed, so that part of the reflective layer on the protrusion is exposed. Therefore, when the pads are plated, part of the reflective layer on the exposed bumps will also be plated abnormally, affecting the yield of the backlight module (or display device) of the small LED.

The invention provides a light-emitting device, and the yield rate can be improved.

The invention provides a method for manufacturing a light emitting device, which can improve the yield of the light emitting device.

The invention provides another manufacturing method of the light emitting device, which can also improve the yield of the light emitting device.

The light-emitting device of the present invention includes a substrate, a driving circuit, a first insulating layer, a conductive pattern layer, an electroplating layer, a protective layer and a light-emitting element. The driving circuit is arranged on the base. The first insulating layer is disposed on the driving circuit and has an opening overlapping the driving circuit. The conductive pattern layer has a first portion, wherein the first portion of the conductive pattern layer is disposed on the body of the first insulating layer and is located outside the opening of the first insulating layer. The electroplating layer has at least one protruding structure, wherein the at least one protruding structure is disposed on the first portion of the conductive pattern layer and is electrically connected to the first portion of the conductive pattern layer. The protective layer is disposed on the first insulating layer and covers at least one protruding structure and the first part of the conductive pattern layer. The light emitting element is electrically connected to the driving circuit.

In an embodiment of the present invention, the at least one protruding structure is separated from the first portion of the conductive pattern layer by a distance.

In an embodiment of the present invention, the above-mentioned at least one raised structure includes a first part and a second part, the first part of the at least one raised structure is directly connected to the first part of the conductive pattern layer, and the at least one raised structure The second portion of the at least one protruding structure is directly connected to the first portion of the at least one protruding structure, the width of the second portion of the at least one protruding structure is greater than the width of the first portion of the at least one protruding structure, and the second portion of the at least one protruding structure The portion is separated from the first portion of the conductive pattern layer by the above-mentioned distance.

In an embodiment of the present invention, the above-mentioned at least one protruding structure has a convex surface protruding away from the base.

In an embodiment of the present invention, the above-mentioned at least one raised structure includes a first part and a second part, the first part of the at least one raised structure is directly connected to the first part of the conductive pattern layer, and the at least one raised structure The second portion of the at least one protruding structure is directly connected to the first portion of the at least one protruding structure, the width of the second portion of the at least one protruding structure is greater than the width of the first portion of the at least one protruding structure, and the second portion of the at least one protruding structure The portion has the above-mentioned convex surface.

In an embodiment of the present invention, the above-mentioned conductive pattern layer further has a second portion, the first portion of the conductive pattern layer is separated from the second portion of the conductive pattern layer, and the second portion of the conductive pattern layer penetrates through the second portion of the first insulating layer. The opening is electrically connected to the driving circuit, and the light emitting element is electrically connected to the second portion of the conductive pattern layer.

In an embodiment of the present invention, the above-mentioned light-emitting device further includes a second insulating layer disposed on the first portion of the conductive pattern layer, wherein the second insulating layer has at least one first opening, and at least one protrusion of the electroplating layer The structure is filled into at least one first opening of the second insulating layer, so as to be electrically connected to the first portion of the conductive pattern layer.

In an embodiment of the present invention, the above-mentioned electroplating layer further has a connecting portion, the connecting portion of the electroplating layer is separated from at least one protrusion structure of the electroplating layer, and the connecting portion of the electroplating layer is electrically connected to the second portion of the conductive pattern layer , and the light-emitting element is electrically connected to the connecting portion of the electroplating layer.

In an embodiment of the present invention, there is a gap between the at least one protrusion structure and the first portion of the conductive pattern layer, and the protective layer fills the gap.

In an embodiment of the present invention, the distance between the top surface of the protective layer and the base is greater than the distance between the apex of the at least one protruding structure and the base.

A method for manufacturing a light-emitting device according to an embodiment of the present invention includes the following steps: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is disposed on the substrate, and the first insulating layer is disposed on the driving circuit and has a structure overlapping the driving circuit. an opening; a conductive material layer is formed on the first insulating layer, wherein the conductive material layer is electrically connected to the driving circuit through the opening of the first insulating layer; a second insulating layer is formed on the conductive material layer, wherein the second insulating layer has exposed At least one first opening of the conductive material layer, and at least one first opening of the second insulating layer is located outside the opening of the first insulating layer; a defining layer is formed on the conducting material layer and the second insulating layer, wherein the defining layer has at least one The first opening and the second opening, and the at least one first opening of the definition layer overlaps the at least one first opening of the second insulating layer; the electroplating process is performed to define the at least one first opening of the layer and the second insulating layer At least one raised structure of the electroplating layer is formed in at least one first opening of the defined layer, and a connection portion of the electroplating layer is formed in the second opening of the definition layer; after the at least one raised structure and the connecting portion of the electroplating layer are formed, the Definition layer; using at least one raised structure of the electroplating layer, the second insulating layer and the connection part of the electroplating layer as a mask, patterning the conductive material layer to form a conductive pattern layer, wherein the conductive pattern layer has a first part and a second part part, the first part of the conductive pattern layer is disposed on the entity of the first insulating layer and is located outside the opening of the first insulating layer, and at least one raised structure of the electroplating layer is disposed on the first part of the conductive pattern layer and is connected with the conductive pattern The first part of the layer is electrically connected, the connection part of the electroplating layer is arranged on the second part of the conductive pattern layer and is electrically connected with the second part of the conductive pattern layer, and the second part of the conductive pattern layer passes through the second part of the first insulating layer. The opening is electrically connected to the driving circuit, and the first part and the second part of the conductive pattern layer are separated from each other; a protective layer is formed to cover at least one protrusion structure, the second insulating layer and the first part of the conductive pattern layer, wherein the protection The layer has an opening, exposing the connection part of the electroplating layer; and transposing the light-emitting element on the base, and electrically connecting the light-emitting element and the connection part of the electroplating layer.

A method for manufacturing a light emitting device according to another embodiment of the present invention includes the following steps: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is disposed on the substrate, and the first insulating layer is disposed on the driving circuit and has a layer overlapping the driving circuit. The opening of the line; forming a conductive pattern layer on the base, wherein the first part of the conductive pattern layer is arranged on the entity of the first insulating layer, and is located outside the opening of the first insulating layer; on the conductive pattern layer and the first insulating layer forming a defined layer, wherein the defined layer has a plurality of first openings exposing the first portion of the conductive pattern layer; performing an electroplating process to form a plurality of raised structures of the electroplating layer in the plurality of first openings of the defined layer, wherein A plurality of raised structures are electrically connected to the first portion of the conductive pattern layer; after forming the plurality of raised structures of the electroplating layer, the definition layer is removed; a protective layer is formed to cover the plurality of raised structures and the conductive pattern layer The first part, wherein the protective layer has an opening overlapping the opening of the first insulating layer; forming a soldering material in the opening of the protective layer, wherein the soldering material is electrically connected to the driving circuit through the opening of the first insulating layer; and The light-emitting element is placed on the base, and the light-emitting element is electrically connected with the welding material.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, the limit of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

1A to 1H are schematic cross-sectional views of the manufacturing process of a light emitting device 10 according to an embodiment of the present invention. The manufacturing process of the light emitting device 10 according to an embodiment of the present invention will be illustrated below with reference to FIG. 1A to FIG. 1H .

Please refer to FIG. 1A, firstly, the driving circuit DC and the first insulating layer 150 are formed on the substrate 110, wherein the driving circuit DC is arranged on the substrate 110, and the first insulating layer 150 is arranged on the driving circuit DC and has a structure overlapping the driving circuit DC. The opening 150a. For example, in this embodiment, the driving circuit DC includes a first metal layer 120, an insulating layer 130, and a second metal layer 140, wherein the first metal layer 120 is disposed on the substrate 110, and the insulating layer 130 is disposed on the first metal layer 140. The layer 120 has an opening 130 a on it. The second metal layer 140 is disposed on the insulating layer 130 and is electrically connected to the first metal layer 120 through the opening 130 a of the insulating layer 130 . In this embodiment, the driving line DC is, for example, a passive driving line. However, the present invention is not limited thereto, and in other embodiments, the driving line DC may also be an active driving line.

Referring to FIG. 1A , next, a conductive material layer 160 is formed on the first insulating layer 150 , wherein the conductive material layer 160 is electrically connected to the driving circuit DC through the opening 150 a of the first insulating layer 150 . In this embodiment, an electroplating process can be performed to form the conductive material layer 160 on the first insulating layer 150, and the conductive material layer 160 can also be called an electroplating conductive layer. For example, in this embodiment, the material of the conductive material layer 160 can be tin, silver, gold, nickel, copper, other materials or a combination of at least two of the above, but the invention is not limited thereto.

Please refer to FIG. 1B, then, a second insulating layer 170 is formed on the conductive material layer 160, wherein the second insulating layer 170 has at least one first opening 170a exposing the conductive material layer 160, and at least one first opening 170a of the second insulating layer 170 An opening 170 a is located outside the opening 150 a of the first insulating layer 150 . For example, in this embodiment, the material of the second insulating layer 170 can be an inorganic material (for example: silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material or the above-mentioned combination, but the present invention is not limited thereto.

Please refer to FIG. 1C, then, a definition layer 180 is formed on the conductive material layer 160 and the second insulating layer 170, wherein the definition layer 180 has at least one first opening 180a and a second opening 180b, and at least one of the definition layer 180 The first opening 180 a overlaps at least one first opening 170 a of the second insulating layer 170 . For example, in this embodiment, the material of the definition layer 180 can be photoresist, but the invention is not limited thereto.

Please refer to FIG. 1D, then, an electroplating process is performed to form at least one raised structure 191 of the electroplating layer 190 in at least one first opening 180a of the definition layer 180 and at least one first opening 170a of the second insulating layer 170 , and a connection portion 192 of the plating layer 190 is formed in the second opening 180 b of the definition layer 180 . At least one protruding structure 191 of the electroplating layer 190 is separated from the connecting portion 192 of the electroplating layer 190 . At least one protruding structure 191 and the connecting portion 192 of the electroplating layer 190 are electrically connected to the conductive material layer 160 . In this embodiment, the material of the electroplating layer 190 is preferably a conductive material with high reflectivity, such as tin, silver, gold, nickel, copper, other materials or a combination of at least two of the above, but the present invention does not limit.

Referring to FIG. 1D and FIG. 1E , then, the definition layer 180 is removed to expose a portion of the second insulating layer 170 and a portion of the conductive material layer 160 between the protruding structure 191 and the connection portion 192 of the plating layer 190 .

Please refer to FIG. 1E and FIG. 1F, then, using at least one protrusion structure 191 of the electroplating layer 190, the second insulating layer 170, and the connecting portion 192 of the electroplating layer 190 as a mask, pattern the conductive material layer 160 to form a conductive pattern Layer 162. Referring to FIG. 1F , the conductive pattern layer 162 has a first portion 162 a and a second portion 162 b separated from each other. The first portion 162a of the conductive pattern layer 162 is disposed on the entity 152 of the first insulating layer 150 and located outside the opening 150a of the first insulating layer 150 . At least one protruding structure 191 of the electroplating layer 190 is disposed on the first portion 162 a of the conductive pattern layer 162 and is electrically connected to the first portion 162 a of the conductive pattern layer 162 . The connection portion 192 of the electroplating layer 190 is disposed on the second portion 162 b of the conductive pattern layer 162 and is electrically connected to the second portion 162 b of the conductive pattern layer 162 . The second portion 162b of the conductive pattern layer 162 is electrically connected to the driving circuit DC through the opening 150a of the first insulating layer 150 . In this embodiment, the second insulating layer 170 is disposed on the first portion 162a of the conductive pattern layer 162, and the raised structure 191 of the electroplating layer 190 fills the first opening 170a of the second insulating layer 170 for electrical connection. to the first portion 162a of the conductive pattern layer 162 .

Referring to FIG. 1F , in this embodiment, the protruding structure 191 is separated from the first portion 162 a of the conductive pattern layer 162 by a distance D. Specifically, in this embodiment, the protruding structure 191 includes a first portion 191a and a second portion 191b, the first portion 191a of the protruding structure 191 is directly connected to the first portion 162a of the conductive pattern layer 162, the protruding structure The second portion 191b of the protruding structure 191 is directly connected to the first portion 191a of the protruding structure 191, the width W2 of the second portion 191b of the protruding structure 191 is greater than the width W1 of the first portion 191a of the protruding structure 191, and the protruding structure 191 The second portion 191b of the conductive pattern layer 162 is separated by a distance D from the first portion 162a of the conductive pattern layer 162 . In addition, the protruding structure 191 has a convex surface 191s protruding toward the direction z away from the base 110 . In detail, the second portion 191b of the protruding structure 191 has a convex surface 191s.

Referring to FIG. 1G , next, a protective layer 194 is formed to cover the protruding structure 191 , the second insulating layer 170 and the first portion 162 a of the conductive pattern layer 162 . The protective layer 194 has an opening 194a. The opening 194 a of the passivation layer 194 overlaps the opening 150 a of the first insulating layer 150 . The opening 194 a of the protection layer 194 exposes the connection portion 192 of the plating layer 190 . In this embodiment, the distance D194 between the top surface 194s of the protection layer 194 and the base 110 is greater than the distance D191 between the apex 191p of the protruding structure 191 and the base 110 .

Referring to FIG. 1H , then, the light emitting element 196 is transposed on the substrate 110 , and the light emitting element 196 is electrically connected to the connection portion 192 of the electroplating layer 190 . In this embodiment, the light emitting element 196 can be electrically connected to the driving circuit DC through the connection portion 192 of the electroplating layer 190 and the second portion 162 b of the conductive pattern layer 162 . Here, the light emitting device 10 of this embodiment is completed. In this embodiment, at least a part of the light emitting element 196 may overlap the opening 194a of the protective layer 194, but the invention is not limited thereto. In this embodiment, the light emitting device 10 can be used as a backlight. However, the present invention is not limited thereto. In other embodiments, the light emitting device 10 can also be used as a self-luminous display device.

It is worth mentioning that the protruding structure 191 of the electroplating layer 190 can reflect the light beam L emitted by the light emitting element 196 to the outside of the light emitting device 10 to improve the light extraction efficiency of the light emitting device 10 . In particular, the protruding structure 191 used to reflect the light beam L itself is formed by an electroplating process instead of being composed of a protruding object and a reflective layer covering the protruding object. Therefore, in the manufacturing process of the light emitting device 10, there will be no The problem that the reflective layer is exposed and abnormally plated occurs, thereby improving the yield of the light emitting device 10 .

It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the aforementioned embodiments, and the following embodiments will not be repeated.

2A to 2G are schematic cross-sectional views of the manufacturing process of a light emitting device 10A according to another embodiment of the present invention. The light-emitting device 10A of FIGS. 2A to 2G and its manufacturing process are similar to the light-emitting device 10 of FIGS. 1A to 1H and its manufacturing process. The second insulating layer 170 of the embodiment shown in FIGS. 1A to 1H . The manufacturing process of the light emitting device 10A according to the second embodiment of the present invention will be described below with reference to FIGS. 2A to 2G .

Please refer to FIG. 2A , firstly, the driving circuit DC and the first insulating layer 150 are formed on the substrate 110, wherein the driving circuit DC is disposed on the substrate 110, and the first insulating layer 150 is disposed on the driving circuit DC and has a structure overlapping the driving circuit DC. The opening 150a. Next, a conductive pattern layer 162 is formed on the substrate 110 , wherein the first portion 162 a of the conductive pattern layer 162 is disposed on the entity 152 of the first insulating layer 150 and located outside the opening 150 a of the first insulating layer 150 .

Referring to FIG. 2B , next, a definition layer 180 is formed on the conductive pattern layer 162 and the first insulating layer 150 , wherein the definition layer 180 has a plurality of first openings 180a exposing the first portion 162a of the conductive pattern layer 162 .

Please refer to FIG. 2C, then, an electroplating process is performed to form a plurality of raised structures 191 of the electroplating layer 190 in a plurality of first openings 180a of the definition layer 180, wherein the plurality of raised structures 191 are electrically connected to the conductive The first part 162a of the pattern layer 162 . The protruding structure 191 is separated by a distance D from the first portion 162 a of the conductive pattern layer 162 . Specifically, in this embodiment, the protruding structure 191 includes a first portion 191a and a second portion 191b, the first portion 191a of the protruding structure 191 is directly connected to the first portion 162a of the conductive pattern layer 162, the protruding structure The second portion 191b of the protruding structure 191 is directly connected to the first portion 191a of the protruding structure 191, the width W2 of the second portion 191b of the protruding structure 191 is greater than the width W1 of the first portion 191a of the protruding structure 191, and the protruding structure 191 The second portion 191b of the conductive pattern layer 162 is separated by a distance D from the first portion 162a of the conductive pattern layer 162 .

Referring to FIG. 2C and FIG. 2D , then, the definition layer 180 is removed to expose the first portion 162 a of the conductive pattern layer 162 and a portion of the driving circuit DC overlapping the opening 150 a of the first insulating layer 150 . In this embodiment, after the definition layer 180 is removed, there is a gap g between the protruding structure 191 and the first portion 162 a of the conductive pattern layer 162 . In detail, in this embodiment, the gap g exists between the second portion 191 b of the protruding structure 191 and the first portion 162 a of the conductive pattern layer 162 .

Please refer to FIG. 2E, and then, a protective layer 194 is formed to cover the plurality of raised structures 191 and the first portion 162a of the conductive pattern layer 162, wherein the protective layer 194 has an opening 194a overlapping the opening 150a of the first insulating layer 150 . In this embodiment, the protection layer 194 further fills the gap g.

Referring to FIG. 2F , next, a soldering material 195 is formed in the opening 194 a of the protection layer 194 , wherein the soldering material 195 is electrically connected to the driving circuit DC through the opening 150 a of the first insulating layer 150 . For example, in this embodiment, the solder material 195 may include nickel-gold film (including nickel/or nickel alloy and gold/or gold alloy), nickel-palladium-gold film (including nickel/or nickel alloy, palladium/or palladium alloy and gold/or gold alloy), nickel-palladium-silver-gold film (including nickel/or nickel alloy, palladium/or palladium alloy, silver/or silver alloy and gold/or gold alloy), but the present invention is not limited thereto.

Referring to FIG. 2G , then, the light-emitting element 196 is transposed on the substrate 110 , and the light-emitting element 196 is electrically connected to the solder material 195 . In this embodiment, the light emitting element 196 is electrically connected to the driving circuit DC through the solder material 195 . Here, the light emitting device 10A of this embodiment is completed.

10, 10A: light emitting device 110: base 120: the first metal layer 130: insulating layer 130a, 150a, 194a: openings 140: second metal layer 150: the first insulating layer 152: entity 160: conductive material layer 162: conductive pattern layer 162a: Part 1 162b: Part Two 170: second insulating layer 170a, 180a: first opening 180: Define layers 180b: second opening 190: Plating layer 191: Raised structure 191a: Part 1 191b: Part Two 191s: Convex 191p: apex 192: connection part 194: protective layer 194s: top surface 195: welding material 196: Light emitting element D, D191, D194: distance DC: drive line g: gap L: light beam W1, W2: Width

1A to 1H are schematic cross-sectional views of the manufacturing process of a light emitting device 10 according to an embodiment of the present invention. 2A to 2G are schematic cross-sectional views of the manufacturing process of a light emitting device 10A according to another embodiment of the present invention.

10: Lighting device

110: base

120: the first metal layer

130: insulating layer

130a, 150a, 194a: openings

140: second metal layer

150: the first insulating layer

152: entity

162: conductive pattern layer

162a: Part 1

162b: Part Two

170: second insulating layer

170a: first opening

190: Plating layer

191: Raised structure

191a: Part 1

191b: Part Two

191s: Convex

191p: apex

192: connection part

194: protective layer

194s: top surface

196: Light emitting element

D, D191, D194: distance

DC: drive line

L: light beam

W1, W2: Width

z: direction

Claims (12)

A lighting device comprising: a base; a driving circuit arranged on the substrate; A first insulating layer is disposed on the driving circuit and has an opening overlapping the driving circuit; A conductive pattern layer having a first portion, wherein the first portion of the conductive pattern layer is disposed on a body of the first insulating layer and is located outside the opening of the first insulating layer; An electroplating layer having at least one raised structure, wherein the at least one raised structure is disposed on the first portion of the conductive pattern layer and is electrically connected to the first portion of the conductive pattern layer; a protective layer disposed on the first insulating layer and covering the at least one raised structure and the first portion of the conductive pattern layer; and A light emitting element is electrically connected to the driving circuit. The light-emitting device as claimed in claim 1, wherein the at least one protruding structure is separated from the first portion of the conductive pattern layer by a distance. The light-emitting device according to claim 2, wherein the at least one raised structure includes a first portion and a second portion, and the first portion of the at least one raised structure is directly connected to the first portion of the conductive pattern layer. portion, the second portion of the at least one protruding structure is directly connected to the first portion of the at least one protruding structure, a width of the second portion of the at least one protruding structure is greater than that of the at least one protruding structure A width of the first portion, and the distance between the second portion of the at least one protruding structure and the first portion of the conductive pattern layer. The light-emitting device as claimed in claim 1, wherein the at least one protruding structure has a convex surface protruding toward a direction away from the base. The light-emitting device according to claim 4, wherein the at least one raised structure includes a first portion and a second portion, and the first portion of the at least one raised structure is directly connected to the first portion of the conductive pattern layer. portion, the second portion of the at least one protruding structure is directly connected to the first portion of the at least one protruding structure, a width of the second portion of the at least one protruding structure is greater than that of the at least one protruding structure The first portion has a width, and the second portion of the at least one protruding structure has the convex surface. The light-emitting device according to claim 1, wherein the conductive pattern layer further has a second portion, the first portion of the conductive pattern layer is separated from the second portion of the conductive pattern layer, and the first portion of the conductive pattern layer The second part is electrically connected to the driving circuit through the opening of the first insulating layer, and the light emitting element is electrically connected to the second part of the conductive pattern layer. The lighting device as described in Claim 6, further comprising: A second insulating layer disposed on the first portion of the conductive pattern layer, wherein the second insulating layer has at least one first opening, and the at least one raised structure of the electroplating layer is filled into the second insulating layer The at least one first opening is electrically connected to the first portion of the conductive pattern layer. The light-emitting device as claimed in item 6, wherein the electroplating layer further has a connecting portion, the connecting portion of the electroplating layer is separated from the at least one protrusion structure of the electroplating layer, and the connecting portion of the electroplating layer is electrically connected to the second portion of the conductive pattern layer, and the light emitting element is electrically connected to the connection portion of the electroplating layer. The light emitting device as claimed in claim 1, wherein there is a gap between the at least one protruding structure and the first portion of the conductive pattern layer, and the protection layer fills the gap. The light-emitting device as claimed in claim 1, wherein a distance between a top surface of the protective layer and the base is greater than a distance between a vertex of the at least one protruding structure and the base. A method of manufacturing a light emitting device, comprising: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is arranged on the substrate, and the first insulating layer is arranged on the driving circuit and has an opening overlapping the driving circuit; forming a conductive material layer on the first insulating layer, wherein the conductive material layer is electrically connected to the driving circuit through the opening of the first insulating layer; A second insulating layer is formed on the conductive material layer, wherein the second insulating layer has at least one first opening exposing the conductive material layer, and the at least one first opening of the second insulating layer is located on the first insulating layer. outside the opening of the layer; A defined layer is formed on the conductive material layer and the second insulating layer, wherein the defined layer has at least one first opening and a second opening, and at least one first opening of the defined layer overlaps the second insulating layer the at least one first opening of; performing an electroplating process to form at least one raised structure of an electroplating layer in the at least one first opening of the definition layer and the at least one first opening of the second insulating layer, and in the at least one first opening of the definition layer forming a connection portion of the electroplating layer in the second opening; removing the definition layer after forming the at least one raised structure and the connecting portion of the electroplating layer; Using the at least one protrusion structure of the electroplating layer, the second insulating layer, and the connecting portion of the electroplating layer as a mask, patterning the conductive material layer to form a conductive pattern layer, wherein the conductive pattern layer has a A first part and a second part, the first part of the conductive pattern layer is disposed on a solid body of the first insulating layer and is located outside the opening of the first insulating layer, the at least one protrusion of the electroplating layer The structure is disposed on the first portion of the conductive pattern layer and is electrically connected to the first portion of the conductive pattern layer, and the connection portion of the electroplating layer is disposed on the second portion of the conductive pattern layer and is connected to the first portion of the conductive pattern layer. The second part of the conductive pattern layer is electrically connected, the second part of the conductive pattern layer is electrically connected to the driving circuit through the opening of the first insulating layer, and the first part of the conductive pattern layer and the The second part is separated from each other; forming a protection layer to cover the at least one protrusion structure, the second insulating layer and the first portion of the conductive pattern layer, wherein the protection layer has an opening exposing the connection portion of the electroplating layer; and A light emitting element is transposed on the base, and the light emitting element is electrically connected with the connection portion of the electroplating layer. A method of manufacturing a light emitting device, comprising: forming a driving circuit and a first insulating layer on a substrate, wherein the driving circuit is arranged on the substrate, and the first insulating layer is arranged on the driving circuit and has an opening overlapping the driving circuit; forming a conductive pattern layer on the base, wherein a first portion of the conductive pattern layer is disposed on a body of the first insulating layer and is located outside the opening of the first insulating layer; forming a definition layer on the conductive pattern layer and the first insulating layer, wherein the definition layer has a plurality of first openings exposing the first portion of the conductive pattern layer; performing an electroplating process to form a plurality of raised structures of an electroplating layer in the first openings of the definition layer, wherein the raised structures are electrically connected to the first portion of the conductive pattern layer; After forming the raised structures of the electroplating layer, removing the definition layer; forming a protective layer to cover the raised structures and the first portion of the conductive pattern layer, wherein the protective layer has an opening overlapping the opening of the first insulating layer; forming a soldering material in the opening of the protective layer, wherein the soldering material is electrically connected to the driving circuit through the opening of the first insulating layer; and A light-emitting element is transposed on the base, and the light-emitting element is electrically connected with the welding material.

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