TWI768613B - Semiconductor wafer cleaning method and semiconductor wafer cleaning device - Google Patents

Abstract

A semiconductor wafer cleaning method for cleaning the surface of a semiconductor wafer (11) attached to the upper surface of a dicing film (30), wherein the semiconductor wafer cleaning method comprises: a gas-dissolved water cleaning step (S201 ). ), the surface of the semiconductor wafer (11) is cleaned using gas-dissolved water obtained by dissolving a specific gas in water; and a wiping cleaning step (S202) is performed to wipe the surface of the semiconductor wafer (11), and the gas After the dissolved water cleaning step ( S201 ), a wiping cleaning step ( S202 ) is performed to remove foreign matter on the surface of the semiconductor wafer ( 11 ).

Description

Semiconductor wafer cleaning method and semiconductor wafer cleaning device

The present disclosure relates to a semiconductor wafer cleaning method and a semiconductor wafer cleaning apparatus for cleaning a semiconductor wafer.

Semiconductor wafers are produced by cutting 8-inch or 12-inch wafers into predetermined sizes. At the time of cutting, in order not to disperse the cut semiconductor wafer, a dicing film is attached to the back surface, and the wafer is cut from the front side by a dicing saw, a laser beam, or the like. At this time, the dicing film attached to the back surface is slightly cut, but the semiconductor wafers are held without being cut. And each cut|disconnected semiconductor wafer is picked up from a dicing film one by one, and is conveyed to the next process, such as flip-chip bonding.

During dicing, foreign matter such as chips from semiconductor wafers or chips from dicing films adhere to the surface of the semiconductor wafer. Therefore, the surface of the semiconductor wafer or the surface of the cut wafer is cleaned during or after dicing. . For the cleaning of the semiconductor wafer, as described in, for example, Japanese Patent Laid-Open No. 2003-257912, a method of blowing a cleaning fluid onto the semiconductor wafer may be used.

Moreover, after performing the finishing process which mirror-polished the surface of a wafer, the washing|cleaning for cleaning the surface of a wafer is performed. For example, in Japanese Patent No. 4675448, it is proposed to use an alkali-based cleaning solution, an acid-based cleaning solution, or ozone water for cleaning.

In recent years, direct bonding in which another semiconductor wafer is directly bonded to a semiconductor wafer has been frequently used. In the case of direct bonding, even if fine foreign matter with a size of several micrometers to submicrometers adheres to the surface, the bonding quality may be deteriorated.

On the other hand, in the conventional cleaning methods described in Patent Document 1 and Patent Document 2, foreign matter can be removed with a size of about several tens of microns, but it is difficult to perform several microns, which is a problem in direct bonding. ~Removal of sub-micron fine foreign matter.

Therefore, an object of the present disclosure is to remove the fine foreign matter adhering to the surface of the semiconductor wafer. [Means of Solving Problems]

The semiconductor wafer cleaning method of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support, and the semiconductor wafer cleaning method includes a gas-dissolved water cleaning step by dissolving a specific gas in The gas formed in water dissolves water to clean the surface of the semiconductor wafer, and the wiping cleaning step cleans the surface of the semiconductor wafer.

The semiconductor wafer cleaning method of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support, and the semiconductor wafer cleaning method includes a gas-dissolved water cleaning step by dissolving a specific gas in The surface of the semiconductor wafer is cleaned with gas-dissolved water obtained from water; and a wiping cleaning step is performed to wipe the surface of the semiconductor wafer, and a wiping cleaning step is performed to remove the surface of the semiconductor wafer after the gas-dissolved water cleaning step. of foreign bodies.

Inorganic fine foreign matters such as chippings of the wafer are removed by the gas-dissolved water cleaning step, and organic fine foreign matters are removed by the wiping cleaning step, so that the surface of the semiconductor wafer can be effectively cleaned. wash.

In the semiconductor wafer cleaning method of the present disclosure, the wiping cleaning step may be performed after the gas-dissolved water cleaning step, and the gas-dissolved water cleaning step may be performed again after the wiping and cleaning step.

In addition, the semiconductor wafer cleaning method of the present disclosure may further include an ozone water cleaning step for cleaning the surface of the semiconductor wafer using ozone water obtained by dissolving ozone in water The wiping cleaning process is performed after the gas-dissolved water cleaning process, the gas-dissolved water cleaning process is performed again after the wiping and cleaning process, and then the ozone water cleaning process is performed.

In addition, in the semiconductor wafer cleaning method of the present disclosure, a drying step of drying the surface of the semiconductor wafer may be performed after the last cleaning step.

In addition, in the semiconductor wafer cleaning method of the present disclosure, the gas-dissolved water cleaning step may also allow the ultrasonically vibrated gas-dissolved water to contact the surface of the semiconductor wafer to remove foreign matter on the surface of the semiconductor wafer.

In addition, in the cleaning method of a semiconductor wafer of the present disclosure, the specific gas may be a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water may be such that the total saturation of the specific gas under atmospheric pressure is 60% to 60%. 100% water made by dissolving specific gases. Here, the gas-dissolved water may be obtained by adding an alkali to water obtained by dissolving a specific gas.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, in the wiping cleaning step, the surface of the semiconductor wafer may be wiped while the cleaning liquid continuously flows on the surface of the semiconductor wafer.

In addition, in the cleaning method of a semiconductor wafer of the present disclosure, the cleaning solution may be carbonated water obtained by dissolving carbon dioxide gas in water, or the cleaning solution may be hydrogen water obtained by dissolving hydrogen gas in water. Ammonia-added hydrogen water made of alkali. Here, the resistivity of the cleaning solution may be 0.05 MΩ･cm to 1 MΩ･cm.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, the support material to which the semiconductor wafer is attached may be a film, and the upper surface of the semiconductor wafer to which the semiconductor wafer is attached may be covered with an adhesive layer. In addition, the film to which the semiconductor wafer is attached may be a dicing film.

In addition, in the cleaning method of a semiconductor wafer of the present disclosure, the support material may be a silicon wafer, a glass plate or a substrate.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, in the wiping cleaning step, the surface of the semiconductor wafer may be wiped with a porous sponge, or the surface of the semiconductor wafer may be wiped with a cloth containing microfibers.

The semiconductor wafer cleaning device of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support, and the semiconductor wafer cleaning device includes a turntable on which the surface of the semiconductor wafer attached to the upper surface is placed. The support material is rotated in the state where the support material of the semiconductor wafer is present; the gas-dissolved water nozzle sprays the gas-dissolved water obtained by dissolving a specific gas in water on the surface of the semiconductor wafer; The surface of the semiconductor wafer is moved to wipe the surface of the semiconductor wafer, and the wiping arm includes a cleaning liquid nozzle for flowing the cleaning liquid on the surface of the semiconductor wafer.

Thereby, the gas-dissolved water is sprayed onto the surface of the semiconductor wafer from the gas-dissolved water nozzle to remove inorganic fine foreign matter such as chips of the wafer, and adhere to the surface of the semiconductor wafer by the wiping member attached to the tip of the wiping arm. Since the organic-based fine foreign matter on the surface of the semiconductor wafer is removed, the surface of the semiconductor wafer can be cleaned efficiently.

In the semiconductor wafer cleaning apparatus of the present disclosure, the wiping member may be constituted by a porous sponge, or may be constituted by a fabric or knitted fabric using microfibers.

In the semiconductor wafer cleaning apparatus of the present disclosure, the wiping arm may further include a pressing mechanism for pressing the wiping member onto the surface of the semiconductor wafer, and the pressing mechanism includes a pressing force adjustment mechanism for adjusting the pressing pressure and a pressing force adjustment mechanism for pressing. Either or both of the pressing amount adjustment mechanisms for amount adjustment. in addition. The wiping arm may include a rotary drive mechanism that rotates the wiping member either or both of rotation and revolution, and continuously flows the cleaning liquid while rotating the wiping member to wipe and clean the surface of the semiconductor wafer. , and can wash off foreign matter adhering to the wiping member.

In the semiconductor wafer cleaning apparatus of the present disclosure, the bonding apparatus for bonding the semiconductor wafer to another semiconductor wafer or a substrate can be integrally arranged, and the cleaned semiconductor wafer after cleaning can be supplied to the bonding apparatus. In addition, it may be integrated with a dicing device that cuts a semiconductor wafer attached to a dicing film to form a semiconductor wafer, and can be removed from the surface of the semiconductor wafer and adhered to the surface of the semiconductor wafer at the time of cutting the wafer. Inorganic and organic foreign matter. [Effect of invention]

The present disclosure enables removal of fine foreign matter adhering to the surface of the semiconductor wafer.

Hereinafter, the configuration of the semiconductor wafer cleaning apparatus 100 according to the embodiment will be described with reference to the drawings. As shown in FIG. 1 , the semiconductor wafer cleaning apparatus 100 includes a turntable 50 , a gas-dissolved water nozzle 61 , a wiping arm 70 , and a water reservoir 55 . In addition, an ultrasonic oscillator 62 is attached to the gas-dissolved water nozzle 61 .

The rotary table 50 includes a rotary plate 51 , a rotary shaft 52 , and a rotary drive unit 53 . The rotating shaft 52 penetrates the water reservoir 55 arranged on the lower side of the rotating plate 51, the rotating plate 51 is attached to the upper end, and the rotation driving part 53 is attached to the lower end. The rotary plate 51 is a circular flat plate, and the diced wafer 10 is placed on the upper surface.

As shown in FIG. 2 , the wafer 10 is made of disk-shaped silicon, and is attached to the upper surface of the dicing film 30 as a support material. The upper side of the outer peripheral edge of the dicing film 30 is attached to the ring 20 . The wafer 10 is cut in a lattice shape with a dicing saw from the upper side, and divided into a plurality of semiconductor wafers 11 .

As shown in FIG. 1 , on the upper surface of the rotary plate 51 , a plurality of semiconductor wafers 11 after dicing the wafer 10 are placed with the dicing film 30 interposed therebetween. The rotary table 50 rotates the rotary plate 51 by the rotary drive unit 53 . Thereby, the rotary table 50 rotates the semiconductor wafer 11 placed on the upper surface of the rotary plate 51 .

The gas-dissolved water nozzle 61 is arranged on the upper side of the turntable 50 , and sprays the gas-solution water to the surface of the semiconductor wafer 11 placed on the upper surface of the turntable 50 . The root side of the gas-dissolved water nozzle 61 is connected to a gas-dissolved water production apparatus (not shown). In addition, an ultrasonic oscillator 62 for ultrasonically vibrating the gas-dissolved water is attached to the outer peripheral surface near the lower end of the gas-dissolved water nozzle 61 . In addition, the gas-dissolved water nozzle 61 can be moved in the XY directions along the surface of the semiconductor wafer 11 by an XY driving device not shown.

The wiping arm 70 includes an arm body 71 , a wiping member holding portion 73 , a cleaning liquid nozzle 72 , a rotational driving portion 75 , a pressing mechanism 76 , and an XY driving portion 77 .

The arm body 71 can be moved in the XY directions along the surface of the semiconductor wafer 11 by the XY drive unit 77 . On the lower side of the front end of the arm body 71, a wiping member holding portion 73 for attaching the wiping member 74 is attached to the lower end. In addition, on the upper side of the front end of the arm body 71, a rotation driving part 75 including a rotation driving mechanism for rotationally driving the wiper member 74 and a pressing mechanism 76 are attached, and the pressing mechanism 76 is in the vertical direction. The wiping member holding portion 73 is driven, and the wiping member 74 is pressed against the surface of the semiconductor wafer 11 . In addition, a cleaning liquid nozzle 72 is attached to the front end of the arm body 71, and the root side of the cleaning liquid nozzle 72 is connected to a cleaning liquid tank (not shown), and the cleaning liquid is applied to the surface of the semiconductor wafer 11 from the lower end. flow.

The wiping member 74 wipes and removes fine foreign matter of organic matter adhering to the surface of the semiconductor wafer 11 , and may include, for example, a porous sponge, a cloth containing microfibers, or a fabric or knitted fabric using microfibers.

The pressing mechanism 76 includes either or both of a pressing force adjustment mechanism that adjusts the pressing force of the wiping member 74 against the surface of the semiconductor wafer 11 and a pressing amount adjustment mechanism that adjusts the pressing amount.

Gas-dissolved water is water obtained by dissolving a specific gas in water. Here, the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water is obtained by dissolving the specific gas so that the total saturation of the specific gas under atmospheric pressure becomes 60% to 100%. of water. Specifically, the gas-dissolved water may be hydrogen water obtained by dissolving hydrogen in water. Further, the gas-dissolved water may be obtained by adding an alkali component, for example, ammonia-added hydrogen water obtained by adding ammonia to hydrogen water.

The cleaning solution may be carbonated water obtained by dissolving carbon dioxide gas in water, or ammonia-added hydrogen water obtained by adding alkali to hydrogen water obtained by dissolving hydrogen gas in water. Here, the cleaning solution may have a resistivity of 0.05 MΩ･cm to 1 MΩ･cm.

Next, referring to FIGS. 3 to 7 , a cleaning process and a semiconductor wafer cleaning method of the surface of the semiconductor wafer 11 will be described using the semiconductor wafer cleaning apparatus 100 configured as described above.

As shown in step S101 of FIG. 3 , the wafer 10 manufactured in the wafer manufacturing process is attached to the upper surface of the dicing film 30 as shown in FIG. 4 . The dicing film 30 includes a substrate 31 and an adhesive layer 32 covering the upper surface of the substrate 31 , and the wafer 10 is attached on the upper surface of the adhesive layer 32 .

The cutting process shown in step S102 of FIG. 3 is performed by a cutting device. The dicing device is a device that cuts the semiconductor wafer 10 attached to the dicing film 30 to form the semiconductor wafer 11 . As shown in FIG. 5 , the dicing device scribes a slit 14 on the wafer 10 to cut the wafer 10 into a plurality of semiconductor chips 11 . At this time, the adhesive layer 32 of the dicing film 30 is also cut off together with the wafer 10 . In the dicing process, when the notch 14 is formed on the wafer 10 , inorganic foreign matter 15 such as silicon chips and organic foreign matter 16 such as chips of the adhesive layer 32 are generated. The larger of the foreign objects 15 and 16 is removed in the post-cutting cleaning process shown in step S103 of FIG. 3 . However, the fine foreign matter 15 and the foreign matter 16 on the order of several micrometers to sub-micrometers are not removed, and as shown in FIG. 11 on the side of the state. In addition, the organic-based fine foreign matter 16 is in a state of adhering to the upper surface of the semiconductor wafer 11 .

Next, as shown in step S201 of FIG. 3 , the gas-dissolved water cleaning step is performed. The gas-dissolved water cleaning step is a step of cleaning the surface of the semiconductor wafer 11 by spraying gas-dissolved water onto the surface of the semiconductor wafer 11 from the gas-dissolved water nozzle 61 . When the gas-dissolved water passes through the gas-dissolved water nozzle 61, it is ultrasonically vibrated by the ultrasonic oscillator 62 and contains fine bubbles. The fine bubbles are foamed on the surface of the semiconductor wafer 11 or in the notch 14 , and the fine inorganic foreign matter 15 on the surface of the semiconductor wafer 11 is removed by the impact thereof. In the case of using hydrogen water as the gas-dissolved water, the hydrogen water does not corrode organic substances, so the inorganic foreign substances 15 can be removed without damaging the substrate 31 of the dicing film 30 which is an organic substance. In addition, since the oxidation of the surface is suppressed by the hydrogen water, the surface of the semiconductor wafer 11 can be finished to an unoxidized surface. Furthermore, when alkali-added hydrogen water is used, the removed foreign matter 15 can be prevented from adhering to the surface of the semiconductor wafer 11 again, so that the cleanliness of the surface of the semiconductor wafer 11 after cleaning can be further improved.

On the other hand, since hydrogen water does not corrode organic substances, organic-based fine foreign substances 16 such as chips adhering to the adhesive layer 32 on the upper surface of the semiconductor wafer 11 cannot be removed. As shown in FIG. 6 , organic-based fine foreign matter is also attached to the upper surface of the semiconductor wafer 11 . Therefore, it progresses to step S202 of FIG. 3, and the wiping cleaning process is performed.

The wiping cleaning step is a step of causing the wiping member holding portion 73 attached to the tip of the wiping arm 70 by the rotary drive portion 75 while continuously flowing the cleaning liquid on the surface of the semiconductor wafer 11 from the cleaning liquid nozzle 72 . The wiping member 74 attached to the wiping member holding portion 73 is pressed against the surface of the semiconductor wafer 11 by the pressing mechanism 76 , thereby wiping the organic foreign matter 16 adhering to the surface of the semiconductor wafer 11 .

In the wiping and washing step, the wiping member holding portion 73 may be rotated. Furthermore, the wiping member holding part 73 revolves around the rotating shaft 52 by the rotation of the turntable 50 . In addition, the arm main body 71 may be moved in the XY directions by the XY drive unit 77 . In addition, the wiping member holding portion 73 may be revolved around the rotating shaft 52 by the rotation driving portion 75 . In addition, during the wiping and cleaning process, the pressing force adjustment mechanism in the pressing mechanism 76 may be used to adjust the pressing force of the wiping member 74 against the surface of the semiconductor wafer 11 , or the pressing force of the pressing mechanism 76 may be adjusted. The pressing amount adjustment mechanism of the wiping member 74 adjusts the pressing amount of the wiping member 74 to the semiconductor wafer 11 .

The organic foreign matter 16 can be effectively removed from the surface of the semiconductor wafer 11 by the wiping cleaning step. Here, as the cleaning liquid, pure water, hydrogen water, alkali-added hydrogen water, carbonated water, or the like can be used. In the case of using hydrogen water, alkali-added hydrogen water, and carbonated water, the generation of static electricity can be suppressed.

Then, after the wiping and cleaning process is completed, the organic-based fine foreign matter 16 is removed from the surface of the semiconductor wafer 11 , and the surface of the semiconductor wafer 11 becomes a clean surface as shown in FIG. 8 . Then, as shown in step S301 of FIG. 3 , the semiconductor wafer 11 having the cleaned surface is bonded to another semiconductor wafer 11 or a substrate in a bonding apparatus. In addition, the drying process may be performed after the wiping and cleaning process shown in step S202 in FIG. 3 , and the semiconductor wafer 11 may be dried and then bonded. In addition, although the bonding apparatus is, for example, a flip chip bonding apparatus, any apparatus that bonds the semiconductor wafer 11 to an object to be bonded, such as a die bonding apparatus, can be used.

As described above, the semiconductor wafer cleaning apparatus 100 of the embodiment can remove the fine foreign matter 15 and the foreign matter 16 adhering to the surface of the semiconductor wafer 11 .

On the other hand, as shown in FIG. 8 , in the cleaning method of the prior art, even after cleaning, inorganic foreign matter 15 or organic foreign matter 15 of several micrometers to submicrometers remains on the surface of the semiconductor wafer 11 . of foreign bodies 16. Therefore, when the semiconductor wafer 11 is peeled off from the dicing film 30 , the foreign matter 15 adhering to the surface of the semiconductor wafer 11 falls on the surface of the adjacent semiconductor wafer 11 as indicated by the arrow 91 . When the semiconductor wafer 11 is directly bonded to the foreign matter 15 that has fallen on the surface of the semiconductor wafer 11 , good bonding may not be performed due to the foreign matter 15 .

However, according to the semiconductor wafer cleaning apparatus 100 of the embodiment, since the fine foreign matter 15 and the foreign matter 16 adhering to the surface of the semiconductor wafer 11 can be removed, the bonding quality at the time of direct bonding can be improved.

In the semiconductor wafer cleaning apparatus 100 of the above-described embodiment, the cleaning of the surface of the semiconductor wafer 11 attached to the dicing film 30 has been described, but the present invention is not limited to this. For example, it can be applied to the following cases. : After the dicing and cleaning process, only good semiconductor wafers 11 are picked up from the plurality of diced semiconductor wafers 11 and attached to a glass plate via an adhesive, and a plurality of semiconductor wafers 11 are attached and placed on the glass plate The surface of the semiconductor wafer 11 is cleaned on the turntable 50 . In this case, the glass plate constitutes the support material. In addition, instead of a glass plate, the semiconductor chip 11 may be attached to a silicon wafer or a substrate, and the silicon wafer or the substrate may be placed on the turntable 50 to perform cleaning of the semiconductor chip 11 . In this case, the silicon wafer and the substrate constitute the support material.

Next, another cleaning step of the semiconductor wafer cleaning apparatus 100 according to the embodiment will be described with reference to FIGS. 9 to 11 . Steps that are the same as those of the cleaning step described above with reference to FIG. 3 are assigned the same reference numerals and descriptions thereof are omitted.

In the cleaning process shown in FIG. 9 , as shown in step S201 in FIG. 9 , the gas-dissolved water cleaning process is performed after the cutting process, and then, the wiping cleaning process is performed in step S202 , and then again in step S203 in FIG. 9 . The gas-dissolved water cleaning process is performed. Thereby, the inorganic fine foreign matter 15 can be removed more effectively.

The cleaning process shown in FIG. 10 is similar to the cleaning process in FIG. 9. After the wiping cleaning process is performed in step S202, the gas-dissolved water cleaning process is performed again in S203, and then the ozone water is further performed in step S204. cleaning process.

The ozone water cleaning step cleans the surface of the semiconductor wafer 11 by spraying ozone water obtained by dissolving ozone in water from the gas-dissolving water nozzle 61 . By adding the ozone water washing step, the organic-based fine foreign matter 16 can be removed more effectively.

In the cleaning process shown in FIG. 11 , only the gas-dissolved water cleaning process and the wiping cleaning process are performed without performing the post-cutting cleaning process shown in step S103 in FIG. 3 . Thereby, the cleaning process can be shortened.

In addition, in the cleaning steps described with reference to FIGS. 9 to 11 , the drying step may be performed after the gas-dissolved water cleaning step, the ozone water cleaning step, and the wiping cleaning step, which are the final cleaning steps, respectively. , to dry the surface of the semiconductor wafer 11 .

The semiconductor wafer cleaning apparatus 100 of the embodiment may be arranged integrally with the bonding apparatus, and the cleaned and cleaned semiconductor wafer 11 may be supplied to the bonding apparatus. Thereby, the semiconductor wafer 11 with higher cleanliness can be supplied to the bonding apparatus.

In addition, the semiconductor wafer cleaning apparatus 100 of the embodiment may be arranged integrally with the dicing apparatus. For example, instead of the dicing and cleaning device of the dicing device, the semiconductor wafer cleaning device 100 can be integrated into the dicing device, and can be removed from the surface of the semiconductor wafer 11 and adhered to the surface of the semiconductor wafer 11 when the wafer 10 is cut. Inorganic and organic fine foreign matter 15, foreign matter 16.

10: Wafer 11: Semiconductor wafer 14: Cut 15: Inorganic foreign matter 16: Foreign matter in organic systems 20: Ring 30: Cut the film 31: Substrate 32: Adhesive layer 50: Rotary table 51: Rotary plate 52: Rotary axis 53, 75: Rotary drive part 55: Water Reservoir 61: Gas Dissolved Water Nozzle 62: Ultrasonic oscillator 70: Wipe Arm 71: Arm body 72: Cleaning fluid nozzle 73: Wiping member holding part 74: Wipe Components 76: Push Mechanism 77: XY drive part 91: Arrow 100: Semiconductor wafer cleaning device S101, S102, S103, S201, S202, S203, S204, S301: Steps

FIG. 1 is a side view showing a configuration of a semiconductor wafer cleaning apparatus according to an embodiment. FIG. 2 is a plan view showing a diced wafer and a semiconductor wafer. 3 is a flowchart showing a cleaning process of a semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1 . FIG. 4 is a cross-sectional view of the wafer before dicing. 5 is a cross-sectional view showing a diced wafer and a semiconductor wafer. 6 is a cross-sectional view of a semiconductor wafer showing a state in which a gas-dissolved water cleaning step has been completed. 7 is a cross-sectional view of a semiconductor wafer in a state in which the wiping and cleaning step has been completed. 8 is a cross-sectional view showing a state of picking up a semiconductor wafer after cleaning by a conventional cleaning method. FIG. 9 is a flowchart showing another cleaning step of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1 . 10 is a flowchart showing another cleaning process of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1 . FIG. 11 is a flowchart showing another cleaning step of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1 .

S101, S102, S103, S201, S202, S301: Steps

Claims (24)

A method for cleaning a semiconductor wafer, characterized in that cleaning the surface of a semiconductor wafer attached to an upper surface of a support material, comprising: a gas-dissolving water cleaning step using a gas obtained by dissolving a specific gas in water Dissolving water to clean the surface of the semiconductor wafer; and a wiping cleaning step of wiping the surface of the semiconductor wafer, wherein the specific gas contains at least one of hydrogen, oxygen, and nitrogen The gas dissolved in the gas is water obtained by dissolving the specific gas so that the total saturation of the specific gas under atmospheric pressure becomes 60% to 100%. The semiconductor wafer cleaning method according to claim 1, wherein the wiping cleaning step is performed after the gas-dissolved water cleaning step to remove foreign matter on the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to claim 2, wherein the wiping and cleaning step is performed after the gas-dissolved water cleaning step, and the gas-dissolved water cleaning step is performed again after the wiping and cleaning step . The semiconductor wafer cleaning method according to claim 3, further comprising an ozone water cleaning step of cleaning the surface of the semiconductor wafer using ozone water obtained by dissolving ozone in water. For cleaning, the wiping and cleaning process is performed after the gas-dissolved water cleaning process, the gas-dissolved water cleaning process is performed again after the wiping and cleaning process, and then the ozone water cleaning process is performed. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein a drying step of drying the surface of the semiconductor wafer is performed after the last cleaning step. The method for cleaning a semiconductor wafer according to any one of claim 1 to claim 4, wherein the gas-dissolved water cleaning step causes the ultrasonically vibrated gas-dissolved water and the surface of the semiconductor wafer contact to remove foreign matter from the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water is at atmospheric pressure An alkali is added to water obtained by dissolving the specific gas so that the total saturation of the specific gas is 60% to 100%. The semiconductor wafer cleaning method according to any one of Claims 1 to 4, wherein the wiping cleaning step is performed while continuously flowing a cleaning solution on the surface of the semiconductor wafer Wiping of the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to claim 8, wherein the cleaning solution is carbonated water obtained by dissolving carbon dioxide gas in water. The semiconductor wafer cleaning method according to claim 8, wherein The cleaning solution is ammonia-added hydrogen water obtained by adding alkali to hydrogen water obtained by dissolving hydrogen gas in water. The semiconductor wafer cleaning method according to claim 10, wherein the resistivity of the cleaning solution is 0.05MΩ. cm~1MΩ. cm. The semiconductor wafer cleaning method according to claim 1, wherein the support material to which the semiconductor wafer is attached is a thin film. The semiconductor wafer cleaning method according to claim 12, wherein the upper surface of the thin film to which the semiconductor wafer is attached is covered with an adhesive layer. The semiconductor wafer cleaning method according to claim 13, wherein the film to which the semiconductor wafer is attached is a dicing film. The semiconductor wafer cleaning method according to claim 1 or claim 12, wherein the support material is a silicon wafer, a glass plate or a substrate. The semiconductor wafer cleaning method according to any one of Claims 1 to 4, wherein the wiping and cleaning step uses a porous sponge to wipe the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to any one of Claims 1 to 4, wherein the wiping and cleaning step wipes the surface of the semiconductor wafer with a cloth containing microfibers. A semiconductor wafer cleaning apparatus, characterized in that cleaning the surface of a semiconductor wafer attached to an upper surface of a support material, comprising: a turntable for placing the surface of the semiconductor wafer attached to the upper surface on the upper surface. The state of the support member of the semiconductor wafer causes the support member to rotate; a gas-dissolving water nozzle for spraying gas-dissolved water obtained by dissolving a specific gas in water on the surface of the semiconductor wafer; and a wiper arm for mounting The wiping member at the front end moves along the surface of the semiconductor wafer to wipe the surface of the semiconductor wafer, and the wiping arm includes a cleaning liquid flowing on the surface of the semiconductor wafer. Cleaning fluid nozzle. The semiconductor wafer cleaning apparatus of claim 18, wherein the wiping member includes a porous sponge. The semiconductor wafer cleaning apparatus of claim 18, wherein the wiping member comprises a fabric or braid using microfibers. The semiconductor wafer cleaning apparatus according to any one of Claims 18 to 20, wherein the wiping arm includes a pressing mechanism that presses the wiping member onto the surface of the semiconductor wafer, so The pressing mechanism includes either or both of a pressing force adjustment mechanism for adjusting the pressing pressure and a pressing amount adjustment mechanism for adjusting the pressing amount. The semiconductor wafer cleaning apparatus according to claim 21, wherein the wiping arm includes any one of rotating and revolving the wiping member A rotary drive mechanism that rotates or both rotates the wiping member and continuously flows the cleaning liquid to wipe and clean the surface of the semiconductor wafer, and can wash off the surface adhered to the semiconductor wafer. Wipe off foreign objects on components. The semiconductor wafer cleaning apparatus according to any one of claim 18 to claim 20, which is integrally arranged with a bonding apparatus for bonding the semiconductor wafer to other semiconductor wafers or substrates, and can clean the semiconductor wafer after cleaning. The cleaned semiconductor wafer is supplied to the bonding apparatus. The semiconductor wafer cleaning apparatus according to any one of Claims 18 to 20, which is integrally arranged with a dicing device that cuts a semiconductor wafer attached to a dicing film to form the semiconductor wafer , inorganic and organic foreign matter adhering to the surface of the semiconductor wafer when the wafer is cut can be removed from the surface of the semiconductor wafer.

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