TW202129700A - Semiconductor chip cleaning method and semiconductor chip cleaning device - Google Patents

Abstract

This semiconductor chip cleaning method for cleaning the surface of a semiconductor chip attached to the upper surface of a support material comprises: a gas-dissolved water cleaning step for cleaning the surface of a semiconductor chip with gas-dissolved water in which a specific gas is dissolved in water; and a wiping cleaning process for wiping the surface of the semiconductor chip, wherein foreign matter on the surface of the semiconductor chip is removed by performing the wiping cleaning step after the gas-dissolved water cleaning step.

Description

Semiconductor wafer cleaning method and semiconductor wafer cleaning device

The present disclosure relates to a semiconductor wafer cleaning method and a semiconductor wafer cleaning device for cleaning semiconductor wafers.

Semiconductor wafers are manufactured by cutting 8-inch or 12-inch wafers into predetermined sizes. During cutting, in order not to disperse the cut semiconductor wafer, a dicing film is attached to the back surface, and the wafer is cut from the surface side with a dicing saw or a laser beam. At this time, the dicing film attached to the back surface is slightly cut in, but it is in a state where each semiconductor wafer is held without being cut. Then, the cut semiconductor wafers are picked up one by one from the dicing film and transported to the next process such as flip chip bonding.

During dicing, foreign matter such as chips from the semiconductor wafer or chips from the dicing film adheres to the surface of the semiconductor wafer. Therefore, the surface of the semiconductor wafer or the surface of the cut wafer is cleaned during or after dicing. . For cleaning of semiconductor wafers, as described in, for example, Japanese Patent Application Laid-Open No. 2003-257912, a method of blowing a cleaning fluid to the semiconductor wafer may be used.

In addition, after performing the finish machining of mirror-polishing the surface of the wafer, washing for cleaning the surface of the wafer is performed. For example, in Japanese Patent No. 4675448, it is proposed to use an alkali-based cleaning solution, an acid-based cleaning solution, or ozone water for cleaning.

In recent years, direct bonding in which other semiconductor wafers are directly bonded to semiconductor wafers has been frequently used. In the case of direct bonding, even if fine foreign matter of a few micrometers to sub-micrometer size adheres to the surface, the bonding quality may be degraded.

On the other hand, in the prior art cleaning methods described in Patent Document 1 and Patent Document 2, foreign matter can be removed with a size of about several tens of microns, but it is difficult to perform a few microns as a problem in direct bonding. ~ Removal of sub-micron fine foreign matter.

Therefore, the purpose of the present disclosure is to remove the fine foreign matter attached to the surface of the semiconductor wafer. [Means to solve the problem]

The semiconductor wafer cleaning method of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support material, and the semiconductor wafer cleaning method includes: a gas-dissolved water cleaning process, using a specific gas to be dissolved in The gas formed in the water dissolves the water to clean the surface of the semiconductor wafer; and the wiping cleaning process wipes the surface of the semiconductor wafer.

The semiconductor wafer cleaning method of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support material, and the semiconductor wafer cleaning method includes: a gas-dissolved water cleaning process, using a specific gas to be dissolved in The surface of the semiconductor wafer is cleaned by the gas-dissolved water made in water; and the wiping cleaning process is to wipe the surface of the semiconductor wafer, and the wiping cleaning process is performed after the gas-dissolved water cleaning process to remove the surface of the semiconductor wafer Foreign body.

The gas-dissolved water cleaning process performs the removal of inorganic fine foreign matter such as wafer chips, and the wiping cleaning process performs the removal of organic fine foreign matter. Therefore, the surface of the semiconductor wafer can be effectively removed. Wash.

In the semiconductor wafer cleaning method of the present disclosure, the wiping cleaning process may be performed after the gas-dissolved water cleaning process, and the gas-dissolving water cleaning process may be performed again after the wiping cleaning process.

In addition, the semiconductor wafer cleaning method of the present disclosure may further include an ozone water cleaning step that uses ozone water obtained by dissolving ozone in water to clean the surface of the semiconductor wafer After the gas-dissolved water cleaning process, the wiping cleaning process is performed, after the wiping cleaning process, the gas-dissolving water cleaning process is performed again, and then the ozone water cleaning process is performed.

In addition, in the semiconductor wafer cleaning method of the present disclosure, the drying process of drying the surface of the semiconductor wafer may be performed after the last cleaning process.

In addition, in the semiconductor wafer cleaning method of the present disclosure, the gas-dissolved water cleaning step can also bring the ultrasonically vibrated gas-dissolved water into contact with the surface of the semiconductor wafer to remove foreign matter on the surface of the semiconductor wafer.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, the specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, and the gas-dissolved water may be a total saturation of the specific gas under atmospheric pressure to 60%~ 100% way to dissolve specific gas into water. Here, the gas-dissolved water may be one obtained by adding an alkali to the water obtained by dissolving a specific gas.

In addition, in the method for cleaning a semiconductor wafer of the present disclosure, the wiping cleaning step can also wipe the surface of the semiconductor wafer while continuously flowing the cleaning solution on the surface of the semiconductor wafer.

In addition, in the semiconductor wafer cleaning method of the present disclosure, the cleaning liquid may be carbonated water obtained by dissolving carbon dioxide gas in water, and the cleaning liquid may be hydrogen water obtained by dissolving hydrogen in water. Ammonia-added hydrogen water made from alkali. Here, the resistivity of the cleaning solution can be 0.05 MΩ･cm～1 MΩ･cm.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, the support material attached with the semiconductor wafer may be a thin film, and the upper surface of the attached semiconductor wafer may be covered by an adhesive layer. In addition, the film to which the semiconductor wafer is attached may be a dicing film.

In addition, in the cleaning method of the semiconductor wafer of the present disclosure, the support material can be a silicon wafer, a glass plate or a substrate.

In addition, in the semiconductor wafer cleaning method of the present disclosure, the wiping cleaning step may also use a porous sponge to wipe the surface of the semiconductor wafer, or use a cloth containing microfibers to wipe the surface of the semiconductor wafer.

The semiconductor wafer cleaning device of the present disclosure cleans the surface of the semiconductor wafer attached to the upper surface of the support material, and the semiconductor wafer cleaning device includes: a rotating table mounted on the upper surface The state of the support material with the semiconductor wafer rotates the support material; the gas-dissolved water nozzle sprays the gas-dissolved water formed by dissolving a specific gas in water onto the surface of the semiconductor wafer; and the wiping arm, which moves the wiping member installed at the tip along The surface of the semiconductor wafer is moved to wipe the surface of the semiconductor wafer, and the wiping arm includes a cleaning liquid nozzle that makes the cleaning liquid flow on the surface of the semiconductor wafer.

In this way, the gas-dissolved water is sprayed onto the surface of the semiconductor wafer from the gas-dissolved water nozzle to remove inorganic fine foreign matter such as chips of the wafer. The wiping member attached to the tip of the wiping arm is attached to it The removal of organic fine foreign matter on the surface of the semiconductor wafer makes it possible to efficiently clean the surface of the semiconductor wafer.

In the semiconductor wafer cleaning device of the present disclosure, the wiping member may be composed of a porous sponge, or may be composed of a woven or knitted fabric using microfibers.

In the semiconductor wafer cleaning device of the present disclosure, the wiping arm may also include a pressing mechanism for pressing the wiping member onto the surface of the semiconductor wafer. The pressing mechanism includes a pressing force adjusting mechanism for adjusting the pressing pressure and pressing Either or both of the pressing amount adjustment mechanisms for the adjustment of the amount. in addition. The wiping arm may also include a rotation drive mechanism that rotates the wiping member either or both of its rotation or revolution. While the wiping member is rotated, the cleaning solution flows continuously to wipe and clean the surface of the semiconductor wafer. , And can wash away foreign matter adhering to the wiping member.

In the semiconductor wafer cleaning device of the present disclosure, it can be arranged integrally with a bonding device for bonding a semiconductor wafer to another semiconductor wafer or a substrate, and the cleaned semiconductor wafer can be supplied to the bonding device. In addition, it can also be integrated with a dicing device that cuts a semiconductor wafer attached to a dicing film into a semiconductor wafer, and can be removed from the surface of the semiconductor wafer and attached to the surface of the semiconductor wafer when the wafer is cut. Inorganic and organic foreign matter on the [Effects of the invention]

The present disclosure can perform the removal of fine foreign matter adhering to the surface of the semiconductor wafer.

Hereinafter, the structure of the semiconductor wafer cleaning apparatus 100 of the embodiment will be described with reference to the drawings. As shown in FIG. 1, the semiconductor wafer cleaning device 100 includes a rotating table 50, a gas-dissolved water nozzle 61, a wiping arm 70, and a water reservoir 55. In addition, an ultrasonic oscillator 62 is attached to the gas-dissolved water nozzle 61.

The rotating table 50 includes a rotating plate 51, a rotating shaft 52, and a rotating drive unit 53. The rotating shaft 52 penetrates the water reservoir 55 arranged on the lower side of the rotating plate 51, the rotating plate 51 is attached to the upper end, and the rotating drive part 53 is attached to the lower end. The rotating plate 51 is a circular flat plate, and the diced wafer 10 is placed on the upper surface.

As shown in FIG. 2, the wafer 10 is made of a disc-shaped silicon, and is attached to the upper surface of the dicing film 30 as a support material. The upper side of the outer peripheral edge of the dicing film 30 is attached to the ring 20. The wafer 10 is cut into a plurality of semiconductor wafers 11 with a dicing saw from the upper side in a grid pattern.

As shown in FIG. 1, on the upper surface of the rotating plate 51, a plurality of semiconductor wafers 11 after the dicing of the wafer 10 is placed with the dicing film 30 interposed therebetween. The rotating table 50 rotates the rotating plate 51 by the rotating drive unit 53. Thereby, the rotating table 50 rotates the semiconductor wafer 11 placed on the upper surface of the rotating plate 51.

The gas-dissolved water nozzle 61 is arranged on the upper side of the turntable 50 and sprays gaseous solution water onto the surface of the semiconductor wafer 11 placed on the upper surface of the turntable 50. The root side of the gas-dissolved water nozzle 61 is connected to a gas-dissolved water production device not shown. In addition, an ultrasonic oscillator 62 that ultrasonically vibrates the gas-dissolved water is mounted on the outer peripheral surface near the lower end of the gas-dissolved water nozzle 61. In addition, the gas-dissolved water nozzle 61 can be moved in the XY direction along the surface of the semiconductor wafer 11 by an XY driving device not shown.

The wiping arm 70 includes an arm body 71, a wiping member holding portion 73, a cleaning liquid nozzle 72, a rotation driving portion 75, a pressing mechanism 76, and an XY driving portion 77.

The arm body 71 can be moved in the XY direction along the surface of the semiconductor wafer 11 by the XY driving unit 77. On the lower side of the front end of the arm body 71, a wiping member holding portion 73 for attaching the wiping member 74 is attached to the lower end. In addition, on the upper side of the front end of the arm body 71, a rotation drive portion 75 including a rotation drive mechanism for rotationally driving the wiping member 74 and a pressing mechanism 76 are installed, and the pressing mechanism 76 extends in the vertical direction. The wiping member holding portion 73 is driven to push the wiping member 74 onto the surface of the semiconductor wafer 11. In addition, a cleaning liquid nozzle 72 is attached to the front end of the arm body 71. The root side of the cleaning liquid nozzle 72 is connected to a cleaning liquid tank (not shown) so that the cleaning liquid is applied to the surface of the semiconductor wafer 11 from the lower end. flow.

The wiping member 74 wipes and removes fine foreign matter of organic matter attached to the surface of the semiconductor wafer 11, and may include, for example, a porous sponge, a cloth containing microfibers, or a fabric or knit fabric using microfibers.

The pressing mechanism 76 includes either or both of a pressing force adjustment mechanism that adjusts the pressing pressure of the wiping member 74 to the surface of the semiconductor wafer 11 and a pressing amount adjustment mechanism that adjusts the pressing amount.

Gas-dissolved water is water obtained by dissolving a specific gas in water. Here, the so-called specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen. The gas-dissolved water is obtained by dissolving the specific gas so that the total saturation of the specific gas under atmospheric pressure becomes 60% to 100%. Of water. Specifically, the gas-dissolved water may be hydrogen water obtained by dissolving hydrogen in water. In addition, the gas-dissolved water may be an alkali component added, and for example, it may be ammonia-added hydrogen water obtained by adding ammonia to hydrogen water.

The cleaning liquid may be carbonated water obtained by dissolving carbon dioxide gas in water, or may be hydrogen water obtained by adding alkali to hydrogen water obtained by dissolving hydrogen gas in water and ammonia-added hydrogen water. Here, the cleaning liquid may have a resistivity of 0.05 MΩ･cm to 1 MΩ･cm.

Next, referring to FIGS. 3 to 7, the cleaning process of the surface of the semiconductor wafer 11 and the semiconductor wafer cleaning method will be described using the semiconductor wafer cleaning apparatus 100 configured as described above.

As shown in step S101 of FIG. 3, the wafer 10 manufactured in the wafer manufacturing process is attached to the upper surface of the dicing film 30 as shown in FIG. 4. The dicing film 30 includes a substrate 31 and an adhesive layer 32 covering the upper surface of the substrate 31, and a wafer 10 is attached to the upper surface of the adhesive layer 32.

The cutting process shown in step S102 of FIG. 3 is executed by the cutting device. The dicing device is a device that cuts the semiconductor wafer 10 attached to the dicing film 30 to form a semiconductor wafer 11. As shown in FIG. 5, the dicing device scribes a notch 14 on the wafer 10 to cut the wafer 10 into a plurality of semiconductor wafers 11. At this time, the adhesive layer 32 of the dicing film 30 is also cut together with the wafer 10. In the dicing process, when the notch 14 is carved on the wafer 10, inorganic foreign materials 15 such as silicon chips and organic foreign materials 16 such as chips of the adhesive layer 32 are generated. The larger of these foreign substances 15 and 16 is removed in the post-cutting cleaning process shown in step S103 of FIG. 3. However, the fine foreign matter 15 and foreign matter 16 of a few micrometers to submicron order are not removed. As shown in FIG. 5, the inorganic fine foreign matter 15 is attached to the surface of the semiconductor wafer 11 or facing the cutout 14 State on the side of 11. In addition, the organic fine foreign matter 16 is in a state of being attached to the upper surface of the semiconductor wafer 11.

Next, as shown in step S201 of FIG. 3, a gas-dissolved water washing process is performed. The gas-dissolved water cleaning step is a step in which gas-dissolved water is sprayed onto the surface of the semiconductor wafer 11 from the gas-dissolved water nozzle 61 to clean the surface of the semiconductor wafer 11. When the gas-dissolved water passes through the gas-dissolved water nozzle 61, it is ultrasonically vibrated by the ultrasonic oscillator 62, and becomes one containing fine bubbles. This fine bubble foams in the surface of the semiconductor wafer 11 or the cutout 14, and the impact removes the fine inorganic foreign matter 15 on the surface of the semiconductor wafer 11. In the case of using hydrogen water as the gas-dissolved water, the hydrogen water does not corrode organic matter, and therefore, the inorganic foreign matter 15 can be removed without damaging the substrate 31 of the dicing film 30 which is the organic matter. In addition, since oxidation of the surface is suppressed by the hydrogen water, the surface of the semiconductor wafer 11 can be finished to an unoxidized surface. Furthermore, when alkali-added hydrogen water is used, the removed foreign matter 15 can be prevented from adhering to the surface of the semiconductor wafer 11 again, so the cleanliness of the surface of the semiconductor wafer 11 after washing can be further improved.

On the other hand, because hydrogen water does not corrode organic matter, it is impossible to remove organic fine foreign matter 16 such as chips attached to the adhesive layer 32 on the upper surface of the semiconductor wafer 11. Even if the gas-dissolved water cleaning process is completed, such as As shown in FIG. 6, on the upper surface of the semiconductor wafer 11, organic fine foreign matter is also attached. Therefore, it progresses to step S202 of FIG. 3, and a wiping cleaning process is performed.

The wiping cleaning process is a process in which the cleaning liquid is continuously flowed from the cleaning liquid nozzle 72 on the surface of the semiconductor wafer 11, and the wiping member holding portion 73 attached to the tip of the wiping arm 70 is driven by the rotation drive unit 75 By rotating, the wiping member 74 mounted on the wiping member holding portion 73 is pressed against the surface of the semiconductor wafer 11 by the pressing mechanism 76 to wipe the organic foreign matter 16 adhering to the surface of the semiconductor wafer 11.

In the wiping and washing process, the wiping member holding portion 73 may be rotated. Furthermore, by the rotation of the rotating table 50, the wiping member holding portion 73 revolves around the rotating shaft 52. In addition, the arm main body 71 may be moved in the XY direction by the XY drive unit 77. In addition, the wiping member holding portion 73 may revolve around the rotation shaft 52 by the rotation driving portion 75. In addition, in the wiping and cleaning process, the pressing force adjustment mechanism of the pressing mechanism 76 can be used to adjust the pressing pressure of the wiping member 74 to the surface of the semiconductor wafer 11, or the pressing mechanism 76 The pressing amount adjustment mechanism adjusts the pressing amount of the wiping member 74 to the semiconductor wafer 11.

The wiping cleaning process can effectively remove organic foreign matter 16 from the surface of the semiconductor wafer 11. Here, as the cleaning liquid, pure water, hydrogen water, alkali-added hydrogen water, carbonated water, or the like can be used. In the case of using hydrogen water, alkali-added hydrogen water, or carbonated water, the generation of static electricity can be suppressed.

Then, after the wiping cleaning step is completed, the organic fine foreign matter 16 is removed from the surface of the semiconductor wafer 11, and the surface of the semiconductor wafer 11 becomes a clean surface as shown in FIG. 8. Then, as shown in step S301 of FIG. 3, the semiconductor wafer 11 with a clean surface is bonded to another semiconductor wafer 11 or a substrate in a bonding device. Furthermore, the drying process may be performed after the wiping cleaning process shown in step S202 of FIG. 3, and the semiconductor wafer 11 may be dried and then bonded. In addition, the bonding apparatus is, for example, a flip-chip bonding apparatus, but it can be used as long as it is a device for bonding the semiconductor wafer 11 to an object to be bonded, such as a die bonding apparatus.

As described above, the semiconductor wafer cleaning apparatus 100 of the embodiment can remove the fine foreign matter 15 and the foreign matter 16 adhering to the surface of the semiconductor wafer 11.

On the other hand, as shown in FIG. 8, in the conventional cleaning method, even after cleaning, there are still a few micrometers to submicron level inorganic or organic foreign matter 15 on the surface of the semiconductor wafer 11.的外物16。 The foreign body 16. Therefore, when the semiconductor wafer 11 is peeled from the dicing film 30, the foreign matter 15 attached to the surface of the semiconductor wafer 11 falls onto the surface of the adjacent semiconductor wafer 11 as indicated by the arrow 91. When the semiconductor wafer 11 is directly bonded to the foreign material 15 dropped on the surface of the semiconductor wafer 11, the foreign material 15 may not be able to perform good bonding.

However, according to the semiconductor wafer cleaning apparatus 100 of the embodiment, since the fine foreign matter 15 and the foreign matter 16 adhering to the surface of the semiconductor wafer 11 can be removed, the bonding quality at the time of direct bonding can be improved.

In the semiconductor wafer cleaning apparatus 100 of the above-described embodiment, the cleaning of the surface of the semiconductor wafer 11 attached to the dicing film 30 has been described, but it is not limited to this, for example, it can also be applied to the following cases : After the dicing and cleaning process, only the good semiconductor wafers 11 are picked up from the diced semiconductor wafers 11 and attached to the glass plate via an adhesive, the multiple semiconductor wafers 11 are attached and the glass plate is placed The surface of the semiconductor wafer 11 is cleaned on the rotating table 50. In this case, the glass plate constitutes the support material. In addition, instead of a glass plate, the semiconductor wafer 11 may be attached to a silicon wafer or substrate, and the silicon wafer or substrate may be placed on the turntable 50 to clean the semiconductor wafer 11. In this case, the silicon wafer and the substrate constitute the support material.

Next, another cleaning process of the semiconductor wafer cleaning apparatus 100 of the embodiment will be described with reference to FIGS. 9 to 11. The steps that are the same as the cleaning steps described above with reference to FIG. 3 are denoted by the same reference numerals, and descriptions thereof will be omitted.

The cleaning process shown in FIG. 9 is shown in step S201 of FIG. 9. After the cutting process, a gas-dissolved water cleaning process is performed. Then, the wiping cleaning process is performed in step S202, and then again in step S203 of FIG. Perform gas-dissolved water cleaning process. Thereby, the inorganic fine foreign matter 15 can be removed more effectively.

The cleaning process shown in FIG. 10 is similar to the cleaning process of FIG. 9. After the wiping cleaning process is performed in step S202, the gas-dissolved water cleaning process is performed again in S203, and then ozone water is performed in step S204. Washing process.

In the ozone water cleaning step, ozone water obtained by dissolving ozone in water is sprayed from the gas-dissolved water nozzle 61 to clean the surface of the semiconductor wafer 11. By adding the ozone water washing process, organic fine foreign matter 16 can be removed more effectively.

The cleaning process shown in FIG. 11 does not perform the post-cut cleaning process shown in step S103 of FIG. 3, and only performs the gas-dissolved water cleaning process and the wiping cleaning process. Thereby, the washing process can be shortened.

Furthermore, in the cleaning process described with reference to FIGS. 9 to 11, the drying process may be performed after the gas-dissolved water cleaning process, the ozone water cleaning process, and the wiping cleaning process as the final cleaning process. , The surface of the semiconductor wafer 11 is dried.

It may be configured such that the semiconductor wafer cleaning device 100 of the embodiment is integrated with the bonding device, and the cleaned semiconductor wafer 11 is supplied to the bonding device. Thereby, the semiconductor wafer 11 with higher cleanliness can be supplied to the bonding device.

In addition, the semiconductor wafer cleaning device 100 of the embodiment and the dicing device may be integrally arranged. For example, instead of the dicing and cleaning device of the dicing device, the semiconductor wafer cleaning device 100 is integrated into the dicing device, which can be removed from the surface of the semiconductor wafer 11 and attached to the surface of the semiconductor wafer 11 when the wafer 10 is cut. Inorganic and organic fine foreign matter 15, foreign matter 16.

10: Wafer 11: Semiconductor wafer 14: incision 15: Inorganic foreign matter 16: Organic foreign matter 20: ring 30: cutting film 31: Substrate 32: Adhesive layer 50: Rotating table 51: Rotating plate 52: Rotation axis 53, 75: Rotation drive part 55: water reservoir 61: Gas Dissolved Water Nozzle 62: Ultrasonic Oscillator 70: Wipe arm 71: Arm body 72: Detergent nozzle 73: Wiping member holding part 74: Wipe member 76: Pushing mechanism 77: XY drive 91: Arrow 100: Semiconductor wafer cleaning device S101, S102, S103, S201, S202, S203, S204, S301: steps

FIG. 1 is a side view showing the structure of a semiconductor wafer cleaning apparatus according to an embodiment. Fig. 2 is a plan view showing a wafer and a semiconductor wafer after dicing. 3 is a flowchart showing a cleaning process of a semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1. Fig. 4 is a cross-sectional view of the wafer before dicing. Fig. 5 is a cross-sectional view showing a wafer and a semiconductor wafer after dicing. Fig. 6 is a cross-sectional view of the semiconductor wafer showing a state where the gas-dissolved water washing step is completed. Fig. 7 is a cross-sectional view of the semiconductor wafer in a state where the wiping cleaning step is completed. 8 is a cross-sectional view showing a state of picking up a semiconductor wafer after cleaning by a conventional cleaning method. FIG. 9 is a flowchart showing another cleaning process of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1. FIG. 10 is a flowchart showing another cleaning process of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1. FIG. 11 is a flowchart showing another cleaning process of the semiconductor wafer in the semiconductor wafer cleaning apparatus shown in FIG. 1.

S101, S102, S103, S201, S202, S301: steps

Claims (25)

A method for cleaning a semiconductor wafer, which is characterized in that cleaning the surface of the semiconductor wafer attached to the upper surface of a support material includes: The gas-dissolved water cleaning process uses gas-dissolved water obtained by dissolving a specific gas in water to clean the surface of the semiconductor wafer; and a wiping cleaning process to clean the surface of the semiconductor wafer wipe. The semiconductor wafer cleaning method according to claim 1, wherein The wiping cleaning step is performed after the gas-dissolved water cleaning step to remove foreign matter on the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to claim 2, wherein The wiping and washing step is performed after the gas-dissolved water washing step, and the gas-dissolving water washing step is performed again after the wiping and washing step. The semiconductor wafer cleaning method described in claim 3 further includes an ozone water cleaning process, The ozone water cleaning step uses ozone water obtained by dissolving ozone in water to clean the surface of the semiconductor wafer. The wiping and washing step is performed after the gas-dissolved water washing step, the gas-dissolving water washing step is performed again after the wiping and washing step, and then the ozone water washing step is performed. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein A drying process of drying the surface of the semiconductor wafer is performed after the last cleaning process. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein In the gas-dissolved water cleaning step, the ultrasonically vibrated gas-dissolved water is brought into contact with the surface of the semiconductor wafer to remove foreign matter on the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein The specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, The gas-dissolved water is water obtained by dissolving the specific gas so that the total saturation of the specific gas under atmospheric pressure becomes 60% to 100%. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein The specific gas is a gas containing at least one of hydrogen, oxygen, and nitrogen, The gas-dissolved water is obtained by adding an alkali to the water obtained by dissolving the specific gas so that the total saturation of the specific gas under atmospheric pressure becomes 60% to 100%. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein In the wiping cleaning step, while continuously flowing a cleaning solution on the surface of the semiconductor wafer, the surface of the semiconductor wafer is wiped. The semiconductor wafer cleaning method according to claim 9, wherein The cleaning liquid is carbonated water obtained by dissolving carbon dioxide gas in water. The semiconductor wafer cleaning method according to claim 9, wherein The cleaning liquid is hydrogen water with ammonia added to hydrogen water obtained by dissolving hydrogen in water and adding alkali. The semiconductor wafer cleaning method according to claim 11, wherein The resistivity of the washing liquid is 0.05 MΩ･cm-1 MΩ･cm. The semiconductor wafer cleaning method according to claim 1, wherein The support material to which the semiconductor wafer is attached is a thin film. The semiconductor wafer cleaning method according to claim 13, wherein The upper surface of the film to which the semiconductor wafer is attached is covered by an adhesive layer. The semiconductor wafer cleaning method according to claim 14, wherein The film to which the semiconductor wafer is attached is a dicing film. The semiconductor wafer cleaning method according to claim 1 or claim 13, wherein The supporting material is a silicon wafer, a glass plate or a substrate. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein In the wiping cleaning step, a porous sponge is used to wipe the surface of the semiconductor wafer. The semiconductor wafer cleaning method according to any one of claim 1 to claim 4, wherein In the wiping cleaning step, a cloth containing microfibers is used to wipe the surface of the semiconductor wafer. A semiconductor wafer cleaning device, which is characterized in that cleaning the surface of the semiconductor wafer attached to the upper surface of a support material includes: A rotating table that rotates the support material in a state where the support material with the semiconductor wafer attached to the upper surface is placed; A gas-dissolved water nozzle for spraying gas-dissolved water obtained by dissolving a specific gas in water onto the surface of the semiconductor wafer; and The wiping arm moves the wiping member installed at the front end along the surface of the semiconductor wafer to wipe the surface of the semiconductor wafer, The wiping arm includes a cleaning liquid nozzle for flowing a cleaning liquid on the surface of the semiconductor wafer. The semiconductor wafer cleaning device according to claim 19, wherein The wiping member includes a porous sponge. The semiconductor wafer cleaning device according to claim 19, wherein The wiping member includes a fabric or woven fabric using microfibers. The semiconductor wafer cleaning device according to any one of claim 19 to claim 21, wherein The wiping arm includes a pressing mechanism for pressing the wiping member onto the surface of the semiconductor wafer, The pressing mechanism includes either or both of a pressing force adjustment mechanism that adjusts the pressing pressure and a pressing amount adjustment mechanism that adjusts the pressing amount. The semiconductor wafer cleaning device according to claim 22, wherein The wiping arm includes a rotation drive mechanism that causes the wiping member to rotate either or both of rotation and revolution, and While the wiping member is rotated, the cleaning liquid is continuously flowed, Wiping cleaning is performed on the surface of the semiconductor wafer, and foreign matter adhering to the wiping member can be washed away. The semiconductor wafer cleaning device according to any one of claim 19 to claim 21, wherein Is arranged integrally with a bonding device for bonding the semiconductor wafer to another semiconductor wafer or substrate, The cleaned semiconductor wafer can be supplied to the bonding device. The semiconductor wafer cleaning device according to any one of claim 19 to claim 21, wherein It is arranged integrally with a dicing device that cuts the semiconductor wafer attached to the dicing film to make the semiconductor wafer, It is possible to remove from the surface of the semiconductor wafer inorganic and organic foreign matter adhering to the surface of the semiconductor wafer when the wafer is cut.

Images