JP2719618B2 - Substrate cleaning equipment - Google Patents
Substrate cleaning equipmentInfo
- Publication number
- JP2719618B2 JP2719618B2 JP1072641A JP7264189A JP2719618B2 JP 2719618 B2 JP2719618 B2 JP 2719618B2 JP 1072641 A JP1072641 A JP 1072641A JP 7264189 A JP7264189 A JP 7264189A JP 2719618 B2 JP2719618 B2 JP 2719618B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning liquid
- liquid tank
- constituent member
- substrate holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、基板の洗浄装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an apparatus for cleaning a substrate.
（従来の技術） 近年、半導体装置は16M、32M、64Mと高集積化される
傾向にあり、このためその回路パターン等も例えば線幅
１μｍ以下級と超微細化が要求されている。(Prior Art) In recent years, semiconductor devices have tended to be highly integrated at 16M, 32M, and 64M, and therefore, their circuit patterns and the like have also been required to be ultrafine, for example, with a line width of 1 μm or less.
このような半導体装置を製造する工程においては、微
小な塵埃の存在が大きな障害となるので、半導体の製造
を行うクリーンルームは、例えばクラス10級の超クリー
ン化が進められている。In the process of manufacturing such a semiconductor device, since the presence of minute dust is a major obstacle, a clean room for manufacturing semiconductors, for example, a class 10 class super clean is being promoted.
ところで、上述のような半導体製造工程においては、
基板に各種処理を施す前処理として、従来から基板例え
ば半導体ウエハの洗浄を行い、半導体ウエハ面に付着し
た塵埃の除去を行っている。このような基板の洗浄装置
としては、従来、ブラシにより基板表面を擦ることによ
り洗浄を行う装置、圧力例えば100Kg程度の高圧ジェッ
ト噴流を基板表面に当てることにより洗浄を行う装置、
超音波振動子を備えたノズルから高周波振動を与えた洗
浄液を基板表面に供給し洗浄を行う装置等が例えば特開
昭61−220434、特開昭60−249331、特開昭50−76986、
特開昭60−193577号公報等で知られている。By the way, in the semiconductor manufacturing process as described above,
2. Description of the Related Art As a pre-process for performing various processes on a substrate, a substrate, for example, a semiconductor wafer has been conventionally washed to remove dust adhering to the semiconductor wafer surface. As such a substrate cleaning device, conventionally, a device that performs cleaning by rubbing the substrate surface with a brush, a device that performs cleaning by applying a high-pressure jet jet having a pressure of, for example, about 100 kg to the substrate surface,
Apparatus and the like for performing cleaning by supplying a cleaning liquid given high frequency vibration from a nozzle equipped with an ultrasonic vibrator to the substrate surface, for example, JP-A-61-220434, JP-A-60-249331, JP-A-50-76986,
This is known from JP-A-60-193577 and the like.
（発明が解決しようとする課題） しかしながら、上記説明の従来の基板の洗浄装置で
は、次のような問題がある。(Problems to be solved by the invention) However, the conventional substrate cleaning apparatus described above has the following problems.
すなわち、一般に半導体ウエハ等の基板表面には例え
ば１μｍ程度の微小な凹凸が有り、このような凹凸りコ
ーナ部に入り込んだ微小な塵埃は、ブラシにより基板表
面を擦る装置では除去することが困難である。That is, generally, the surface of a substrate such as a semiconductor wafer has minute irregularities of, for example, about 1 μm, and such minute dust entering the irregular corners is difficult to be removed by an apparatus that rubs the substrate surface with a brush. is there.
また、高圧ジェット噴流を用いた装置、超音波振動子
を備えたノズルを用いる装置では、上述したような微小
な塵埃でも除去することができるが、高圧ジェット噴流
を用いた装置では基板に損傷を与えるという問題があ
り、超音波振動子を備えたノズルを用いる装置では、ノ
ズルを基板全面にスキャンニングする必要があり、洗浄
に時間を要するという問題がある。In addition, a device using a high-pressure jet jet or a device using a nozzle equipped with an ultrasonic vibrator can remove the fine dust as described above, but a device using a high-pressure jet jet may damage the substrate. In an apparatus using a nozzle having an ultrasonic vibrator, it is necessary to scan the nozzle over the entire surface of the substrate, and there is a problem that it takes time for cleaning.
本発明は、かかる従来の事情に対処してなされたもの
で、従来に較べて基板面に付着した微小な塵埃を効率良
く短時間で除去することができ、かつ、基板に損傷を与
えることのない基板の洗浄装置を提供しようとするもの
である。The present invention has been made in view of such a conventional situation, and it is possible to efficiently remove minute dust adhering to a substrate surface in a short time as compared with the related art, and to provide a method of damaging a substrate. It is intended to provide an apparatus for cleaning a substrate.
［発明の構成］ （課題を解決するための手段） すなわち本発明の基板の洗浄装置は、基板下面の中央
部分をその上面に吸着保持する基板保持部と、 前記基板保持部の下側に延在する如く設けられた回転
軸と、 前記回転軸の下端部に設けられ、当該回転軸を介して
前記基板保持部に吸着保持された基板を回転させるため
の回転駆動機構と、 前記基板保持部と相対的に上下動自在とされ、中央部
に前記回転軸が貫通して設けられる如く構成された貫通
孔を有し、この貫通孔の周辺部に前記基板保持部の下面
と当接されて前記透孔部分を液密に閉塞する当接部を有
するとともに、周辺部上面にテーパ部を有する第１の洗
浄液槽構成部材と、 前記第１の洗浄液槽構成部材の上方に、当該第１の洗
浄液槽構成部材と相対的に上下動自在に設けられ、前記
テーパ部と液密に当接されて前記第１の洗浄液槽構成部
材の周縁部に堰を形成する如く環状に形成された第２の
洗浄液槽構成部材と、 前記当接部に前記基板保持部の下面を当接させるとと
もに、前記テーパ部に前記第２の洗浄液槽構成部材を当
接させて、前記第１の洗浄液槽構成部材の上側に前記基
板を侵漬する如く洗浄液槽を形成した状態で、当該洗浄
液槽内の洗浄液に超音波振動を与える超音波振動子と を備えたことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, a substrate cleaning apparatus of the present invention includes a substrate holding unit that suction-holds a central portion of a lower surface of a substrate on an upper surface thereof, and extends below the substrate holding unit. A rotation shaft provided at a lower end of the rotation shaft, and a rotation drive mechanism for rotating a substrate suction-held by the substrate holding unit via the rotation shaft; and the substrate holding unit. Has a through-hole configured so that the rotation shaft is provided through the center portion thereof, and a peripheral portion of the through-hole is brought into contact with the lower surface of the substrate holding portion. A first cleaning liquid tank component having a contact portion that closes the through-hole portion in a liquid-tight manner, and a first cleaning liquid tank component having a tapered portion on an upper surface of a peripheral portion; It is provided to be movable up and down relatively to the cleaning liquid tank component, A second cleaning liquid tank component formed in an annular shape so as to form a weir at a peripheral portion of the first cleaning liquid tank component in liquid-tight contact with the tapered portion; and holding the substrate in the contact portion. The lower surface of the part was abutted, and the second cleaning liquid tank constituent member was brought into contact with the tapered portion to form a cleaning liquid tank above the first cleaning liquid tank constituent member so as to immerse the substrate. And an ultrasonic vibrator for applying ultrasonic vibration to the cleaning liquid in the cleaning liquid tank in the state.
（作用） 本発明の基板の洗浄装置では、基板保持機構上に基板
を設け、洗浄液槽形成機構によりこの基板を浸漬する如
く洗浄液槽を形成し、この洗浄液槽形成機構に設けられ
た超音波振動子により洗浄液に超音波振動を与え基板の
洗浄を行う。(Operation) In the substrate cleaning apparatus of the present invention, the substrate is provided on the substrate holding mechanism, the cleaning liquid tank is formed by the cleaning liquid tank forming mechanism so that the substrate is immersed, and the ultrasonic vibration provided in the cleaning liquid tank forming mechanism is provided. The substrate is cleaned by applying ultrasonic vibrations to the cleaning liquid with a probe.
したがって、基板に損傷を与えることがなく、かつ、
基板全面を同時に超音波振動を用いて洗浄することがで
き、従来に較べて基板面に付着した微小な塵埃を効率良
く短時間で除去することができる。Therefore, without damaging the substrate, and
The entire surface of the substrate can be simultaneously cleaned using ultrasonic vibration, and fine dust adhering to the substrate surface can be efficiently removed in a short time as compared with the related art.
（実施例） 以下、本発明を半導体ウエハの洗浄を行う基板の洗浄
装置に適用した実施例を図面を参照して説明する。Hereinafter, an embodiment in which the present invention is applied to a substrate cleaning apparatus for cleaning a semiconductor wafer will be described with reference to the drawings.
基板の洗浄装置１には、例えば円板状に構成され、そ
の上面に例えば真空チャック等により半導体ウエハ２を
吸着保持する基板保持部３が設けられている。また、こ
の基板保持部３の下側には、シャフト４を介して回転駆
動機構５および基板昇降機構６が接続されており、半導
体ウエハ２を上下動および高速回転可能とする基板保持
機構が構成されている。The substrate cleaning apparatus 1 is formed, for example, in a disk shape, and is provided with a substrate holding section 3 on the upper surface thereof for holding the semiconductor wafer 2 by suction using, for example, a vacuum chuck. A rotation driving mechanism 5 and a substrate elevating mechanism 6 are connected to the lower side of the substrate holding unit 3 via a shaft 4 to constitute a substrate holding mechanism that can vertically move and rotate the semiconductor wafer 2 at high speed. Have been.
上記基板保持部３の周囲には、例えば樹脂等から円筒
容器状に形成され、その中央部にシャフト４が貫通して
設けられる如く構成された下カップ７が設けられてい
る。この下カップ７の底部は、周辺に環状の低部7aが形
成され、中央に円形の高部7bが形成される如く段差状に
構成されており、低部7aには後述する洗浄液を排出する
ための液体排出配管８、高部7bには下カップ７内から排
気を行うための排気配管９が接続されている。また、こ
の下カップ７には、下カップ昇降機構10が接続されてい
る。Around the substrate holding portion 3, there is provided a lower cup 7, which is formed in a cylindrical container shape from, for example, resin or the like, and has a central portion through which the shaft 4 is provided. The bottom of the lower cup 7 is formed in a step shape so that an annular low portion 7a is formed in the periphery and a circular high portion 7b is formed in the center, and a cleaning liquid described later is discharged to the low portion 7a. Exhaust pipe 9 for exhausting from the inside of the lower cup 7 is connected to the liquid discharge pipe 8 and the high portion 7b. The lower cup 7 is connected to a lower cup lifting mechanism 10.
また、上記下カップ７内の底部には、上述した高部7b
上に載置される如く、内カップ11が設けられている。こ
の内カップ11は、例えば樹脂等から円板状に構成されて
おり、その中央部にはシャフト４が貫通して設けられる
円孔11aが穿設され、上面周縁部には、下方に傾斜する
傾斜部11bが形成されている。The bottom of the lower cup 7 is provided with the above-described high portion 7b.
An inner cup 11 is provided so as to be placed thereon. The inner cup 11 is formed in a disk shape from, for example, resin or the like, and a circular hole 11a through which the shaft 4 is provided is formed in a central portion thereof, and is inclined downward at a peripheral portion of the upper surface. An inclined portion 11b is formed.
さらに、上記内カップ11の上方には、例えば樹脂等か
ら環状に構成され、外カップ昇降機構12により、上下動
自在とされた外カップ13が設けられている。また、この
外カップ内には、超音波振動子14が一または複数設けら
れており、外カップ13の下面には、上述した内カップ11
上面の傾斜部11bと同様な傾斜面13aが形成されている。Above the inner cup 11, there is provided an outer cup 13 which is formed in a ring shape from, for example, resin or the like and which can be moved up and down by an outer cup elevating mechanism 12. One or more ultrasonic vibrators 14 are provided in the outer cup, and the inner cup 11
An inclined surface 13a similar to the inclined portion 11b on the upper surface is formed.
すなわち、第２図に示すように、基板保持部３の下側
に設けられたＯリング15と内カップ11上面を当接すると
ともに、内カップ11上面の傾斜部11bと、外カップ13下
面の傾斜面13aとを当接させ、これらの当接部位を水密
的に保持することにより、半導体ウエハ２を浸漬可能と
する洗浄液槽16を形成可能に構成されている。That is, as shown in FIG. 2, the O-ring 15 provided on the lower side of the substrate holding portion 3 is brought into contact with the upper surface of the inner cup 11, and the inclined portion 11 b of the upper surface of the inner cup 11 and the inclined surface 11 The cleaning liquid tank 16 that allows the semiconductor wafer 2 to be immersed therein can be formed by contacting the surface 13a and holding these contact portions in a watertight manner.
上記構成のこの実施例の基板の洗浄装置１では、次の
ようにして半導体ウエハ２の洗浄を行う。In the substrate cleaning apparatus 1 of this embodiment having the above configuration, the semiconductor wafer 2 is cleaned as follows.
すなわち、まず第１図に示すように、基板保持部３が
下カップ７および外カップ13の上部に突出するよう予め
基板昇降機構６によって基板保持部３を上昇させてお
き、この状態で例えば図示しない搬送装置等により半導
体ウエハ２を基板保持部３上に設け、吸着保持する。That is, first, as shown in FIG. 1, the substrate holding unit 3 is previously raised by the substrate lifting / lowering mechanism 6 so that the substrate holding unit 3 projects above the lower cup 7 and the outer cup 13. The semiconductor wafer 2 is provided on the substrate holding unit 3 by a transfer device or the like, and is held by suction.
この後、第２図に示すように、基板昇降機構６によっ
て基板保持部３を下降させるとともに、下カップ昇降機
構10により下カップ７を上昇させ、基板保持部３の下側
に設けられたＯリング15と内カップ11上面、内カップ11
上面の傾斜部11bと、外カップ13下面の傾斜面13aとをそ
れぞれ当接させ、これらの当接部位を水密的に保持す
る。しかる後、例えば図示しない洗浄液供給ノズルによ
り、半導体ウエハ２の上部から洗浄液例えば純水を供給
し、半導体ウエハ２が浸漬される如く、内カップ11と外
カップ13との間に洗浄液槽16を形成する。そして、外カ
ップ13に設けられた超音波振動子14によってこの洗浄液
槽16に超音波振動を与え、半導体ウエハ２の洗浄を行
う。Thereafter, as shown in FIG. 2, the substrate holding unit 3 is lowered by the substrate lifting / lowering mechanism 6, and the lower cup 7 is raised by the lower cup lifting / lowering mechanism 10, so that the O provided on the lower side of the substrate holding unit 3 Ring 15 and inner cup 11 upper surface, inner cup 11
The inclined portion 11b on the upper surface and the inclined surface 13a on the lower surface of the outer cup 13 are brought into contact with each other, and these contact portions are kept watertight. Thereafter, a cleaning liquid supply nozzle (not shown) supplies a cleaning liquid, for example, pure water from above the semiconductor wafer 2 to form a cleaning liquid tank 16 between the inner cup 11 and the outer cup 13 so that the semiconductor wafer 2 is immersed. I do. Then, ultrasonic vibration is applied to the cleaning liquid tank 16 by the ultrasonic vibrator 14 provided on the outer cup 13 to clean the semiconductor wafer 2.
上記洗浄が終了すると、第３図に示すように、外カッ
プ昇降機構12により外カップ13を上昇させるとともに、
下カップ昇降機構10により下カップ７を下降させ、洗浄
液槽16を破壊して貯留された洗浄液を下カップ７内に落
下させ液体排出配管８から排出する。この後、回転駆動
機構５により半導体ウエハ２を低速で回転させながら、
例えば内カップ11に設けたリンス液供給ノズルおよび半
導体ウエハ２の上部に設けたリンス液供給ノズル（とも
に図示せず）から半導体ウエハ２の上面および下面にリ
ンス液例えば純水を供給してリンスを行う。そして、こ
の後、リンス液の供給を停止し、半導体ウエハ２を高速
回転させて半導体ウエハ２の乾燥を行う。なお、この時
半導体ウエハ２から飛散したリンス液は、外カップ13の
傾斜面13aに衝突して下カップ７内に落下し、液体排出
配管８から排出される。また、この時排気配管９により
排気を行い、ミスト状になったリンス液を、排気配管９
から排気する。When the above washing is completed, as shown in FIG. 3, the outer cup 13 is raised by the outer cup lifting mechanism 12,
The lower cup 7 is lowered by the lower cup elevating mechanism 10 to destroy the cleaning liquid tank 16 and the stored cleaning liquid is dropped into the lower cup 7 and discharged from the liquid discharge pipe 8. Thereafter, while rotating the semiconductor wafer 2 at a low speed by the rotation drive mechanism 5,
For example, a rinsing liquid, such as pure water, is supplied to the upper and lower surfaces of the semiconductor wafer 2 from a rinsing liquid supply nozzle provided on the inner cup 11 and a rinsing liquid supply nozzle (both not shown) provided above the semiconductor wafer 2. Do. Thereafter, the supply of the rinsing liquid is stopped, and the semiconductor wafer 2 is rotated at a high speed to dry the semiconductor wafer 2. At this time, the rinse liquid scattered from the semiconductor wafer 2 collides with the inclined surface 13 a of the outer cup 13, falls into the lower cup 7, and is discharged from the liquid discharge pipe 8. At this time, the exhaust gas is exhausted through the exhaust pipe 9, and the mist-like rinsing liquid is removed from the exhaust pipe 9.
Exhaust from
すなわち、この実施例の基板の洗浄装置１では、高圧
ジェット噴流を用いる従来の方法のように半導体ウエハ
２に損傷を与えることがなく、かつ、半導体ウエハ２全
面（裏面も）を同時に超音波振動を用いて洗浄すること
ができ、従来に較べて半導体ウエハ２にに付着した微小
な塵埃を効率良く短時間で除去することができる。ま
た、同一装置でリンスおよび乾燥を行うことができ、効
率良く洗浄処理を行うことができる。That is, the substrate cleaning apparatus 1 of this embodiment does not damage the semiconductor wafer 2 unlike the conventional method using a high-pressure jet jet, and simultaneously ultrasonically oscillates the entire surface of the semiconductor wafer 2 (including the back surface). And fine dust adhering to the semiconductor wafer 2 can be efficiently removed in a short time as compared with the related art. Further, rinsing and drying can be performed by the same apparatus, and the cleaning process can be performed efficiently.
なお、上記実施例では、超音波振動子14を外カップ13
に設けた例について説明したが、超音波振動子14は内カ
ップ11に設けてもよく、また外カップ13と内カップ11の
両方に設けてもよい。In the above embodiment, the ultrasonic vibrator 14 is connected to the outer cup 13.
Although the example in which the ultrasonic vibrator 14 is provided has been described, the ultrasonic vibrator 14 may be provided in the inner cup 11, or may be provided in both the outer cup 13 and the inner cup 11.
［発明の効果］ 上述のように、本発明の基板の洗浄装置によれば、従
来に較べて基板面に付着した微小な塵埃を効率良く短時
間で除去することができ、かつ、基板に損傷を与えるこ
とがない。したがって、半導体製造工程における生産性
の向上を図ることができる。[Effects of the Invention] As described above, according to the apparatus for cleaning a substrate of the present invention, fine dust adhering to the substrate surface can be efficiently removed in a short time as compared with the related art, and the substrate is damaged. Never give. Therefore, the productivity in the semiconductor manufacturing process can be improved.
第１図ないし第３図は本発明の一実施例の基板の洗浄装
置の構成を示す図である。 １……基板の洗浄装置、２……半導体ウエハ、３……基
板保持部、４……シャフト、５……回転駆動機構、６…
…基板昇降機構、７……下カップ、８……液体排出配
管、９……排気配管、10……下カップ昇降機構、11……
内カップ、12……外カップ昇降機構、13……外カップ、
14……超音波振動子、15……Ｏリング、16……洗浄液
槽。FIGS. 1 to 3 are views showing the configuration of a substrate cleaning apparatus according to one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Cleaning device of board | substrate, 2 ... Semiconductor wafer, 3 ... Substrate holding part, 4 ... Shaft, 5 ... Rotation drive mechanism, 6 ...
... Substrate lifting mechanism, 7 ... Lower cup, 8 ... Liquid discharge pipe, 9 ... Exhaust pipe, 10 ... Lower cup lifting mechanism, 11 ...
Inner cup, 12 …… Outer cup elevating mechanism, 13 …… Outer cup,
14 ... Ultrasonic vibrator, 15 ... O-ring, 16 ... Cleaning liquid tank.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 穴井 徳行 熊本県菊池郡菊陽町津久礼2655番地 テ ル九州株式会社内 (72)発明者 牛島 満 東京都新宿区西新宿１丁目26番２号 東 京エレクトロン株式会社内 (56)参考文献 特開 昭61−181134（ＪＰ，Ａ) 特開 昭57−178327（ＪＰ，Ａ) 特開 昭63−152123（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Noriyuki Anai 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Inside Tel Kyushu Co., Ltd. (56) References JP-A-61-181134 (JP, A) JP-A-57-178327 (JP, A) JP-A-63-152123 (JP, A)
Claims (1)
する基板保持部と、 前記基板保持部の下側に延在する如く設けられた回転軸
と、 前記回転軸の下端部に設けられ、当該回転軸を介して前
記基板保持部に吸着保持された基板を回転させるための
回転駆動機構と、 前記基板保持部と相対的に上下動自在とされ、中央部に
前記回転軸が貫通して設けられる如く構成された貫通孔
を有し、この貫通孔の周辺部に前記基板保持部の下面と
当接されて前記透孔部分を液密に閉塞する当接部を有す
るとともに、周辺部上面にテーパ部を有する第１の洗浄
液槽構成部材と、 前記第１の洗浄液槽構成部材の上方に、当該第１の洗浄
液槽構成部材と相対的に上下動自在に設けられ、前記テ
ーパ部と液密に当接されて前記第１の洗浄液槽構成部材
の周縁部に堰を形成する如く環状に形成された第２の洗
浄液槽構成部材と、 前記当接部に前記基板保持部の下面を当接させるととも
に、前記テーパ部に前記第２の洗浄液槽構成部材を当接
させて、前記第１の洗浄液槽構成部材の上側に前記基板
を侵漬する如く洗浄液槽を形成した状態で、当該洗浄液
槽内の洗浄液に超音波振動を与える超音波振動子と を備えたことを特徴とする基板の洗浄装置。A substrate holding portion for adsorbing and holding a central portion of a lower surface of the substrate on an upper surface thereof; a rotating shaft provided to extend below the substrate holding portion; and a lower end of the rotating shaft. A rotation drive mechanism for rotating the substrate sucked and held by the substrate holding unit via the rotation shaft; and a vertically movable relative to the substrate holding unit, and the rotation shaft penetrates a central portion. A through-hole configured so as to be provided in the peripheral portion, and a peripheral portion of the through-hole having a contact portion that is in contact with the lower surface of the substrate holding portion to close the through-hole portion in a liquid-tight manner. A first cleaning liquid tank constituent member having a tapered portion on an upper surface; and a first cleaning liquid tank constituent member provided above the first cleaning liquid tank constituent member so as to be vertically movable relative to the first cleaning liquid tank constituent member. Liquid-tightly contacting the periphery of the first cleaning liquid tank component A second cleaning liquid tank constituent member formed in an annular shape so as to form a weir, and a lower surface of the substrate holding part is brought into contact with the contact part, and the second cleaning liquid tank constituent member is brought into contact with the tapered part. And an ultrasonic vibrator for applying ultrasonic vibration to the cleaning liquid in the cleaning liquid tank in a state in which the cleaning liquid tank is formed so as to immerse the substrate above the first cleaning liquid tank constituent member. An apparatus for cleaning a substrate, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072641A JP2719618B2 (en) | 1989-03-25 | 1989-03-25 | Substrate cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072641A JP2719618B2 (en) | 1989-03-25 | 1989-03-25 | Substrate cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02252238A JPH02252238A (en) | 1990-10-11 |
| JP2719618B2 true JP2719618B2 (en) | 1998-02-25 |
Family
ID=13495213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1072641A Expired - Fee Related JP2719618B2 (en) | 1989-03-25 | 1989-03-25 | Substrate cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2719618B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101801337B1 (en) * | 2010-11-30 | 2017-11-24 | 닛산 가가쿠 고교 가부시키 가이샤 | Method of treating wafers and dies |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5802098B2 (en) * | 2011-09-29 | 2015-10-28 | 島田化成株式会社 | Work cleaning method and system, and cleaning apparatus |
| JP5588418B2 (en) | 2011-10-24 | 2014-09-10 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP5662918B2 (en) * | 2011-10-24 | 2015-02-04 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP5901419B2 (en) * | 2012-05-11 | 2016-04-13 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
| JP5864355B2 (en) * | 2012-05-11 | 2016-02-17 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178327A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Washer |
| JPS61181134A (en) * | 1985-02-07 | 1986-08-13 | Hitachi Ltd | Cleansing apparatus |
| JPS63152123A (en) * | 1986-12-17 | 1988-06-24 | Tokyo Electron Ltd | Semiconductor manufacturing device |
-
1989
- 1989-03-25 JP JP1072641A patent/JP2719618B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101801337B1 (en) * | 2010-11-30 | 2017-11-24 | 닛산 가가쿠 고교 가부시키 가이샤 | Method of treating wafers and dies |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02252238A (en) | 1990-10-11 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |