TWI767615B - Retractable substrate - Google Patents
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- TWI767615B TWI767615B TW110109692A TW110109692A TWI767615B TW I767615 B TWI767615 B TW I767615B TW 110109692 A TW110109692 A TW 110109692A TW 110109692 A TW110109692 A TW 110109692A TW I767615 B TWI767615 B TW I767615B
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Abstract
Description
本發明是有關於一種可伸縮式基板,且特別是有關於一種適用於顯示裝置的可伸縮式基板。 The present invention relates to a retractable substrate, and more particularly, to a retractable substrate suitable for a display device.
隨著電子技術的高度發展,電子產品不斷推陳出新。為使電子產品能應用於各種不同的領域,可拉伸、輕薄及外型不受限的特性逐漸受到重視。也就是說,電子產品逐漸被要求依據不同的應用方式以及應用環境而具有不同的外型,因此電子產品需具有可拉伸性。 With the high development of electronic technology, electronic products are constantly innovating. In order to enable electronic products to be applied in various fields, the characteristics of stretchability, thinness and unrestricted appearance have gradually been paid more and more attention. That is to say, electronic products are gradually required to have different shapes according to different application methods and application environments, so electronic products need to be stretchable.
然而,電子產品在被拉伸的狀態下,可能會因為承受應力造成結構上的斷裂,甚至進一步造成內部線路的斷路。因此,如何使可拉伸的電子產品具有良好的製造良率(yield)及產品可靠度(reliability),實為目前亟欲解決的課題。 However, when the electronic product is stretched, it may cause structural fracture due to stress, and even further cause the internal circuit to be disconnected. Therefore, how to make the stretchable electronic products have good manufacturing yield and product reliability is an urgent problem to be solved at present.
本發明提供一種可伸縮式基板,可以改善可伸縮式基板在拉伸後出現主動元件損壞的問題。 The invention provides a retractable base plate, which can improve the problem that the active element is damaged after the retractable base plate is stretched.
本發明的至少一實施例提供一種可伸縮式基板。可伸縮式基板包括圖案化基板、多個裝置部以及多個線路部。裝置部位於圖案化基板上。各裝置部包括主動區以及環繞主動區的周邊區。各裝置部包括設置於主動區中的第一主動元件以及第二主動元件。線路部位於圖案化基板上,且連接對應的裝置部。 At least one embodiment of the present invention provides a retractable substrate. The retractable substrate includes a patterned substrate, a plurality of device parts, and a plurality of circuit parts. The device portion is located on the patterned substrate. Each device portion includes an active area and a peripheral area surrounding the active area. Each device portion includes a first active element and a second active element disposed in the active region. The circuit part is located on the patterned substrate and is connected to the corresponding device part.
10、20、30、40:可伸縮式基板 10, 20, 30, 40: retractable base plate
100:圖案化基板 100: Patterned substrate
200:裝置部 200: Device Department
300:線路部 300: Line Department
310:訊號線 310: Signal line
400:連接部 400: Connection part
410:加強結構 410: Strengthen the structure
AR:主動區 AR: Active area
BL:緩衝層 BL: buffer layer
CHa、CHb、CHc、CHd、CHe、CHf:半導體層 CHa, CHb, CHc, CHd, CHe, CHf: semiconductor layer
CL1:第一導電層 CL1: first conductive layer
CL2:第二導電層 CL2: second conductive layer
CL3:第三導電層 CL3: the third conductive layer
Da、Db、Dc、Dd、De、Df:汲極 Da, Db, Dc, Dd, De, Df: drain
DL1:第一資料線 DL1: The first data line
DL2:第二資料線 DL2: Second data line
DL3:第三資料線 DL3: The third data line
Ga、Gb、Gc、Gd、Ge、Gf:閘極 Ga, Gb, Gc, Gd, Ge, Gf: Gate
GI、ILD:絕緣層 GI, ILD: insulating layer
L:長度 L: length
L1:第一發光二極體 L1: The first light-emitting diode
L2:第二發光二極體 L2: The second light-emitting diode
L3:第三發光二極體 L3: the third light-emitting diode
PD1、PD2、PD3、PD4、PD5、PD6:接墊 PD1, PD2, PD3, PD4, PD5, PD6: pads
PL:平坦層 PL: flat layer
PL1:第一電源線 PL1: first power line
PL2:第二電源線 PL2: Second power cord
PR:周邊區 PR: Surrounding area
Sa、Sb、Sc、Sd、Se、Sf:源極 Sa, Sb, Sc, Sd, Se, Sf: source
SE1:第一開關元件 SE1: first switching element
SE2:第二開關元件 SE2: Second switching element
SE3:第三開關元件 SE3: The third switching element
SP1:第一子畫素 SP1: First Subpixel
SP2:第二子畫素 SP2: Second Subpixel
SP3:第三子畫素 SP3: Third Subpixel
SGL:訊號線 SGL: signal line
SL:掃描線 SL: scan line
TH:貫孔 TH: through hole
T1:第一主動元件 T1: The first active element
T2:第二主動元件 T2: The second active element
T3:第三主動元件 T3: The third active element
V:導通孔 V: via hole
W、W1、W2:寬度 W, W1, W2: width
圖1A是依照本發明的一實施例的一種可伸縮式基板的上視示意圖。 FIG. 1A is a schematic top view of a retractable substrate according to an embodiment of the present invention.
圖1B是圖1A的可伸縮式基板在拉伸後的上視示意圖。 FIG. 1B is a schematic top view of the retractable substrate of FIG. 1A after being stretched.
圖2是圖1B的可伸縮式基板的應變量模擬示意圖。 FIG. 2 is a schematic diagram of strain amount simulation of the retractable substrate of FIG. 1B .
圖3A是依照本發明的一實施例的一種可伸縮式基板的上視示意圖。 3A is a schematic top view of a retractable substrate according to an embodiment of the present invention.
圖3B是圖3A的可伸縮式基板省略部分構件後的上視示意圖。 FIG. 3B is a schematic top view of the retractable base plate of FIG. 3A with some components omitted.
圖3C是圖3A的可伸縮式基板省略部分構件後的上視示意圖。 FIG. 3C is a schematic top view of the retractable base plate of FIG. 3A with some components omitted.
圖3D是圖3A的可伸縮式基板的剖面示意圖。 FIG. 3D is a schematic cross-sectional view of the retractable substrate of FIG. 3A .
圖3E是依照本發明的一實施例的一種子畫素的等效電路圖。 3E is an equivalent circuit diagram of a sub-pixel according to an embodiment of the present invention.
圖4是依照本發明的一實施例的一種可伸縮式基板的上視示意圖。 FIG. 4 is a schematic top view of a retractable base plate according to an embodiment of the present invention.
圖5是依照本發明的一實施例的一種可伸縮式基板的上視示意圖。 FIG. 5 is a schematic top view of a retractable base plate according to an embodiment of the present invention.
圖1A是依照本發明的一實施例的一種可伸縮式基板10的上視示意圖。
FIG. 1A is a schematic top view of a
請參考圖1A,可伸縮式基板10包括圖案化基板1 00、多個裝置部200以及多個線路部300。在本實施例中,可伸縮式基板10還包括連接部400。
Referring to FIG. 1A , the
圖案化基板100為軟性材質,舉例來說,圖案化基板100的材質可包括聚醯亞胺(polyimide;PI)、聚萘二甲酸乙醇酯(polyethylene naphthalate;PEN)、聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)、聚碳酸酯(polycarbonates;PC)、聚醚碸(polyether sulfone;PES)或聚芳基酸酯(polyarylate)、其它合適的材料或前述至少二種材料之組合,但本發明不以此為限。
The patterned
在本實施例中,圖案化基板100具有多個貫孔TH。在本實施例中,各貫孔TH為啞鈴狀。在本實施例中,部分貫孔TH沿著第一方向E1延伸,且另一部分貫孔TH沿著第二方向E2延伸。沿著第一方向E1延伸的部分貫孔TH以及沿著第二方向E2延伸的另一部分貫孔TH交替排列,藉此提升可伸縮式基板10的伸縮性。
In this embodiment, the patterned
裝置部200、線路部300以及連接部400位於圖案化基板100上。裝置部200、線路部300以及連接部400相連在一起,且貫孔TH中之一個至少被四個裝置部200實質上環繞。在本實施例中,一個貫孔TH被四個裝置部200、兩個線路部300以及兩個連接部400實質上環繞。舉例來說,在圖1A中,位於中央的貫孔TH被左右兩個線路部300、上下兩個連接部400以及四個角落的裝置部200所環繞。
The
各裝置部200包括主動區AR以及環繞主動區AR的周邊區PR。各裝置部200包括設置於主動區AR中的第一主動元件T1以及第二主動元件T2。在本實施例中,各裝置部200還包括第三主動元件T3。在一些實施例中,各裝置部200為長度為L且寬度為W的矩形,在各裝置部200的寬度W的方向上,周邊區PR的寬度W1為16%W至40%W,且在各裝置部200的長度L的方向上,周邊區PR的寬度W2為16%L至40%L。周邊區PR的寬度W1以及寬度W2為10至250微米。
Each
在本實施例中,各裝置部200包括第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3,其中第二子畫素SP2位於第一子畫素SP1以及第三子畫素SP3之間。第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3分別包括第一主動元件T1、第二主動元件T2以及第三主動元件T3,且第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3分別包括第一發光二極體(圖1A未繪出)、第二發光二極體(圖1A未繪出)以及第三發光二極體(圖1A未
繪出)。第一主動元件T1、第二主動元件T2以及第三主動元件T3分別適用於驅動前述第一發光二極體、第二發光二極體以及第三發光二極體。
In this embodiment, each
在本實施例中,可伸縮式基板10適用於顯示裝置,但本發明不以此為限。在其他實施例中,可伸縮式基板10並非顯示裝置,且裝置部200不包括子畫素。
In this embodiment, the
線路部300連接對應的裝置部200。在本實施例中,各線路部300連接對應的兩個裝置部200。各線路部300包括至少一訊號線310。訊號線310電性連接至對應的第一子畫素SP1、對應的第二子畫素SP2及/或對應的第三子畫素SP3。雖然在圖1A僅繪出訊號線310延伸至裝置部200邊緣,但實際上,裝置部200中還包括許多其他導線(圖1A未繪出),藉此使訊號線310與對應的第一子畫素SP1、對應的第二子畫素SP2及/或對應的第三子畫素SP3電性連接。
The
連接部400鄰近於對應的線路部300。在本實施例中,各連接部400連接對應的兩個裝置部200,且位於對應的一個線路部300的一側。各連接部400包括依序排列的多個加強結構410。加強結構410與訊號線310隔開。在一些實施例中,加強結構410可調整連接部400與線路部300的中性軸位置,並降低訊號線310因為拉伸而斷線的風險。此外,由於加強結構410與訊號線310隔開,因此,即便加強結構410出現裂痕,裂痕也不易延裂至訊號線310,造成訊號線310斷線。在一些實施例中,加強結構410
為備用導線。在一些實施例中,加強結構410為絕緣圖案。
The
圖1B是圖1A的可伸縮式基板10在拉伸後的上視示意圖。圖2是圖1B的可伸縮式基板的應變量模擬示意圖,其中在圖2中,位於左邊的數值代表的是應變量。
FIG. 1B is a schematic top view of the
請參考圖1B與圖2,拉伸可伸縮式基板10,並使其變形。在本實施例中,可伸縮式基板10受到不同方向的拉力F,拉力F使可伸縮式基板10的形狀改變。由圖2的模擬圖可以知道,在裝置部200中,靠近外圍的周邊區PR容易出現比中央的主動區AR還要大的應變,因此,使第一主動元件T1、第二主動元件T2以及第三主動元件T3設置於主動區AR中而非周邊區PR中,藉此避免可伸縮式基板10在拉伸後出現第一主動元件T1、第二主動元件T2以及第三主動元件T3的故障問題。
Referring to FIG. 1B and FIG. 2 , the
在一些實施例中,第一主動元件T1、第二主動元件T2以及第三主動元件T3是直接電性連接至發光二極體的驅動元件,即第一主動元件T1、第二主動元件T2以及第三主動元件T3與對應之發光二極體中間沒有其他薄膜電晶體,因此,第一主動元件T1、第二主動元件T2以及第三主動元件T3的品質對顯示畫面的影響較第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3中的其他薄膜電晶體(例如開關元件)大。因此,將第一主動元件T1、第二主動元件T2以及第三主動元件T3設置於主動區AR比將其他未直接電性連接至發光二極體的薄膜電晶體設置於主動區AR能更佳的改善可伸縮式基板10在拉伸後出現畫面Mura的問
題。
In some embodiments, the first active element T1 , the second active element T2 and the third active element T3 are directly electrically connected to the driving elements of the light emitting diodes, namely the first active element T1 , the second active element T2 and There is no other thin-film transistor between the third active element T3 and the corresponding light-emitting diode. Therefore, the quality of the first active element T1, the second active element T2 and the third active element T3 has a greater impact on the display screen than the first sub-picture. Other thin film transistors (eg, switching elements) in the pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 are large. Therefore, disposing the first active element T1 , the second active element T2 and the third active element T3 in the active region AR is better than disposing other thin film transistors that are not directly electrically connected to the light emitting diodes in the active region AR The improvement of the
圖3A是依照本發明的一實施例的一種可伸縮式基板20的上視示意圖,其中為了更清楚的說明圖3A的可伸縮式基板20,省略可伸縮式基板20的部分構件並繪示於圖3B與圖3C中,在圖3A至圖3D中,相同層別的導電層(即利用同一道圖案化製程形成的導電層)以相同的斜線或網點繪示,而不同層別的導電層透過貫穿絕緣層(例如絕緣層GI及/或絕緣層ILD)的導通孔V而電性連接。圖3D是圖3A的線A-A’的剖面示意圖。圖3E是依照本發明的一實施例的一種子畫素的等效電路圖,在本實施例中,第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3具有類似的等效電路,且圖3E以第一子畫素SP1的等效電路為例。
FIG. 3A is a schematic top view of a
在此必須說明的是,圖3A至圖3E的實施例沿用圖1A和圖1B的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 It must be noted here that the embodiments of FIGS. 3A to 3E use the element numbers and part of the content of the embodiment of FIGS. 1A and 1B , wherein the same or similar numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
請參考圖3A至圖3E,裝置部200與線路部300位於圖案化基板100上。在一些實施例中,圖案化基板100表面設置有緩衝層BL,且裝置部200與線路部300位於緩衝層BL上。
Referring to FIGS. 3A to 3E , the
各線路部300包括多條訊號線SGL。訊號線SGL為掃描線SL、第一資料線DL1、第二資料線DL2、第三資料線DL3、第一電源線PL1及/或第二電源線PL2。
Each
各裝置部200包括第一子畫素SP1、第二子畫素SP2以
及第三子畫素SP3。
Each
第一子畫素SP1包括第一開關元件SE1、第一主動元件T1以及第一發光二極體L1。第一開關元件SE1包括半導體層CHa、閘極Ga、源極Sa與汲極Da。閘極Ga電性連接至掃描線SL。閘極Ga重疊於通道層CHa,且閘極Ga與通道層CHa之間夾有絕緣層GI。絕緣層ILD覆蓋閘極Ga。源極Sa與汲極Da位於絕緣層ILD上,且電性連接至通道層CHa。源極Sa電性連接至第一資料線DL1。 The first sub-pixel SP1 includes a first switching element SE1, a first active element T1 and a first light emitting diode L1. The first switching element SE1 includes a semiconductor layer CHa, a gate electrode Ga, a source electrode Sa and a drain electrode Da. The gate electrode Ga is electrically connected to the scan line SL. The gate electrode Ga overlaps with the channel layer CHa, and the insulating layer GI is sandwiched between the gate electrode Ga and the channel layer CHa. The insulating layer ILD covers the gate electrode Ga. The source electrode Sa and the drain electrode Da are located on the insulating layer ILD and are electrically connected to the channel layer CHa. The source electrode Sa is electrically connected to the first data line DL1.
第一主動元件T1包括半導體層CHb、閘極Gb、源極Sb與汲極Db。閘極Gb電性連接至第一開關元件SE1的汲極Da。閘極Gb重疊於通道層CHb,且閘極Gb與通道層CHb之間夾有絕緣層GI。絕緣層ILD覆蓋閘極Gb。源極Sb與汲極Db位於絕緣層ILD上,且電性連接至通道層CHb。源極Sb電性連接至第一電源線PL1。 The first active element T1 includes a semiconductor layer CHb, a gate Gb, a source Sb and a drain Db. The gate Gb is electrically connected to the drain Da of the first switching element SE1. The gate electrode Gb overlaps the channel layer CHb, and an insulating layer GI is sandwiched between the gate electrode Gb and the channel layer CHb. The insulating layer ILD covers the gate Gb. The source electrode Sb and the drain electrode Db are located on the insulating layer ILD and are electrically connected to the channel layer CHb. The source electrode Sb is electrically connected to the first power line PL1.
平坦層PL位於源極Sa、汲極Da、源極Sb與汲極Db上,且第一發光二極體L1位於平坦層PL上。在一些實施例中,第一發光二極體L1透過接墊PD1以及接墊PD2而分別電性連接至源極Sb以及第二電源線PL2。 The flat layer PL is located on the source electrode Sa, the drain electrode Da, the source electrode Sb and the drain electrode Db, and the first light emitting diode L1 is located on the flat layer PL. In some embodiments, the first light emitting diode L1 is electrically connected to the source electrode Sb and the second power line PL2 through the pad PD1 and the pad PD2, respectively.
第二子畫素SP2包括第二開關元件SE2、第二主動元件T2以及第二發光二極體L2。第二開關元件SE2包括半導體層CHc、閘極Gc、源極Sc與汲極Dc。閘極Gc電性連接至掃描線SL。閘極Gc重疊於通道層CHc,且閘極Gc與通道層CHc之間夾 有絕緣層GI。絕緣層ILD覆蓋閘極Gc。源極Sc與汲極Dc位於絕緣層ILD上,且電性連接至通道層CHc。源極Sc電性連接至第二資料線DL2。 The second sub-pixel SP2 includes a second switching element SE2, a second active element T2 and a second light emitting diode L2. The second switching element SE2 includes a semiconductor layer CHc, a gate electrode Gc, a source electrode Sc and a drain electrode Dc. The gate electrode Gc is electrically connected to the scan line SL. The gate electrode Gc overlaps the channel layer CHc, and is sandwiched between the gate electrode Gc and the channel layer CHc There is an insulating layer GI. The insulating layer ILD covers the gate electrode Gc. The source electrode Sc and the drain electrode Dc are located on the insulating layer ILD and are electrically connected to the channel layer CHc. The source electrode Sc is electrically connected to the second data line DL2.
第二主動元件T2包括半導體層CHd、閘極Gd、源極Sd與汲極Dd。閘極Gd電性連接至第二開關元件SE2的汲極Dc。閘極Gd重疊於通道層CHd,且閘極Gd與通道層CHd之間夾有絕緣層GI。絕緣層ILD覆蓋閘極Gd。源極Sd與汲極Dd位於絕緣層ILD上,且電性連接至通道層CHd。源極Sd電性連接至第一電源線PL1。 The second active element T2 includes a semiconductor layer CHd, a gate electrode Gd, a source electrode Sd and a drain electrode Dd. The gate electrode Gd is electrically connected to the drain electrode Dc of the second switching element SE2. The gate electrode Gd overlaps the channel layer CHd, and an insulating layer GI is sandwiched between the gate electrode Gd and the channel layer CHd. The insulating layer ILD covers the gate electrode Gd. The source electrode Sd and the drain electrode Dd are located on the insulating layer ILD and are electrically connected to the channel layer CHd. The source electrode Sd is electrically connected to the first power line PL1.
第二發光二極體L2位於平坦層PL上。在一些實施例中,第二發光二極體L2透過接墊PD3以及接墊PD4而分別電性連接至源極Sd以及第二電源線PL2。 The second light emitting diode L2 is located on the flat layer PL. In some embodiments, the second light emitting diode L2 is electrically connected to the source electrode Sd and the second power line PL2 through the pad PD3 and the pad PD4, respectively.
第三子畫素SP3包括第三開關元件SE3、第三主動元件T3以及第三發光二極體L3。第三開關元件SE3包括半導體層CHe、閘極Ge、源極Se與汲極De。閘極Ge電性連接至掃描線SL。閘極Ge重疊於通道層CHe,且閘極Ge與通道層CHe之間夾有絕緣層GI。絕緣層ILD覆蓋閘極Ge。源極Se與汲極De位於絕緣層ILD上,且電性連接至通道層CHe。源極Se電性連接至第二資料線DL3。 The third sub-pixel SP3 includes a third switching element SE3, a third active element T3 and a third light emitting diode L3. The third switching element SE3 includes a semiconductor layer CHe, a gate electrode Ge, a source electrode Se and a drain electrode De. The gate electrode Ge is electrically connected to the scan line SL. The gate electrode Ge overlaps the channel layer CHe, and the insulating layer GI is sandwiched between the gate electrode Ge and the channel layer CHe. The insulating layer ILD covers the gate electrode Ge. The source electrode Se and the drain electrode De are located on the insulating layer ILD and are electrically connected to the channel layer CHe. The source electrode Se is electrically connected to the second data line DL3.
第三主動元件T3包括半導體層CHf、閘極Gf、源極S與汲極Df。閘極Gf電性連接至第三開關元件SE3的汲極De。閘極Gf重疊於通道層CHf,且閘極Gf與通道層CHF之間夾有絕緣 層GI。絕緣層ILD覆蓋閘極Gf。源極Sf與汲極Df位於絕緣層ILD上,且電性連接至通道層CHf。源極Sf電性連接至第一電源線PL1。 The third active element T3 includes a semiconductor layer CHf, a gate electrode Gf, a source electrode S and a drain electrode Df. The gate electrode Gf is electrically connected to the drain electrode De of the third switching element SE3. The gate electrode Gf overlaps the channel layer CHf, and an insulation is sandwiched between the gate electrode Gf and the channel layer CHF Layer GI. The insulating layer ILD covers the gate electrode Gf. The source electrode Sf and the drain electrode Df are located on the insulating layer ILD and are electrically connected to the channel layer CHf. The source electrode Sf is electrically connected to the first power line PL1.
第三發光二極體L3位於平坦層PL上。在一些實施例中,第三發光二極體L3透過接墊PD5以及接墊PD6而分別電性連接至源極Sf以及第二電源線PL2。在本實施例中,第一主動元件T1相對於第一發光二極體L1的位置、第二主動元件T2相對於第二發光二極體L2的位置以及第三主動元件T3相對於第三發光二極體L3的位置彼此不同,藉此使第一發光二極體L1、第二主動元件T2以及第三主動元件T3能更容易的設置於主動區AR中。 The third light emitting diode L3 is located on the flat layer PL. In some embodiments, the third light emitting diode L3 is electrically connected to the source electrode Sf and the second power line PL2 through the pad PD5 and the pad PD6, respectively. In this embodiment, the position of the first active element T1 relative to the first light emitting diode L1, the position of the second active element T2 relative to the second light emitting diode L2, and the position of the third active element T3 relative to the third light emitting diode The positions of the diodes L3 are different from each other, so that the first light emitting diode L1 , the second active element T2 and the third active element T3 can be more easily disposed in the active region AR.
在一些實施例中,接墊PD1~PD6為多層結構,舉例來說,接墊PD1~PD6各自包括第一導電層CL1、第二導電層CL2以及第三導電層CL3。在一些實施例中,第一導電層CL1為金屬氧化物(例如銦錫氧化物),第二導電層CL2為金屬(例如銦),第三導電層CL3為金屬(例如金),但本發明不以此為限。在本實施例中,第一發光二極體L1、第二發光二極體L2以及第三發光二極體L3為無機發光二極體(例如微型發光二極體(micro-LED)),但本發明不以此為限。在其他實施例中,第一發光二極體L1、第二發光二極體L2以及第三發光二極體L3為有機發光二極體、電致發光元件或其他自發光元件。 In some embodiments, the pads PD1 ˜ PD6 are multi-layered structures. For example, the pads PD1 ˜ PD6 each include a first conductive layer CL1 , a second conductive layer CL2 and a third conductive layer CL3 . In some embodiments, the first conductive layer CL1 is a metal oxide (eg, indium tin oxide), the second conductive layer CL2 is a metal (eg, indium), and the third conductive layer CL3 is a metal (eg, gold), but the present invention Not limited to this. In this embodiment, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are inorganic light-emitting diodes (eg, micro-LEDs), but The present invention is not limited to this. In other embodiments, the first light emitting diode L1 , the second light emitting diode L2 and the third light emitting diode L3 are organic light emitting diodes, electroluminescent elements or other self-luminous elements.
在本實施例中,為了使傳輸不同訊號的訊號線彼此不會短路,各訊號線選擇性地包括不同層別的導電層,且不同層別的導電層藉由導通孔V而彼此電性連接。 In this embodiment, in order to prevent the signal lines transmitting different signals from short-circuiting each other, each signal line selectively includes conductive layers of different layers, and the conductive layers of different layers are electrically connected to each other through the via holes V .
在本實施例中,第一主動元件T1的半導體層CHb、第二主動元件T2的半導體層CHd以及第三主動元件T3的半導體層CHf設置於主動區AR而非主動區AR外圍的周邊區PR,藉此能避免可伸縮式基板20在拉伸後故障並導致畫面Mura的問題。
In this embodiment, the semiconductor layer CHb of the first active element T1, the semiconductor layer CHd of the second active element T2 and the semiconductor layer CHf of the third active element T3 are disposed in the active region AR instead of the peripheral region PR around the active region AR , thereby avoiding the problem that the
在本實施例中,第一主動元件T1、第二主動元件T2以及第三主動元件T3分別直接電性連接至第一發光二極體L1、第二發光二極體L2以及第三發光二極體L3,因此,第一主動元件T1、第二主動元件T2以及第三主動元件T3的品質對顯示畫面的影響較第一開關元件SE1、第二開關元件SE2以及第三開關元件SE3大。在一些實施例中,基於佈線空間的限制,第一主動元件T1、第二主動元件T2以及第三主動元件T3、第一開關元件SE1、第二開關元件SE2以及第三開關元件SE3沒辦法全部都設置於主動區AR中,優先選擇將第一主動元件T1、第二主動元件T2以及第三主動元件T3設置於主動區AR能較佳的改善可伸縮式基板20在拉伸後出現畫面Mura的問題,但本發明不以此為限。在其他實施例中,若佈線空間足夠,第一主動元件T1、第二主動元件T2以及第三主動元件T3、第一開關元件SE1、第二開關元件SE2以及第三開關元件SE3皆設置於主動區AR。
In this embodiment, the first active element T1, the second active element T2 and the third active element T3 are directly electrically connected to the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode, respectively Therefore, the quality of the first active element T1, the second active element T2 and the third active element T3 has a greater impact on the display screen than the first switching element SE1, the second switching element SE2 and the third switching element SE3. In some embodiments, based on the limitation of wiring space, the first active element T1, the second active element T2 and the third active element T3, the first switching element SE1, the second switching element SE2 and the third switching element SE3 cannot be all All are arranged in the active area AR, and the first active element T1, the second active element T2 and the third active element T3 are preferably arranged in the active area AR, which can better improve the screen Mura of the
圖4是依照本發明的一實施例的一種可伸縮式基板的上視示意圖,其中圖4繪示了第一子畫素SP1中之第一主動元件T1的半導體層、第二子畫素SP2中之第二主動元件T2的半導體層以及第三子畫素SP3中之第三主動元件T3的半導體層,並省略繪出 了第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3中的其他構件。 4 is a schematic top view of a retractable substrate according to an embodiment of the present invention, wherein FIG. 4 illustrates the semiconductor layer of the first active element T1 and the second sub-pixel SP2 in the first sub-pixel SP1 The semiconductor layer of the second active element T2 and the semiconductor layer of the third active element T3 in the third sub-pixel SP3 are omitted from drawing. Other components in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 are stored.
在此必須說明的是,圖4的實施例沿用圖3A至圖3E的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 It must be noted here that the embodiment of FIG. 4 uses the element numbers and part of the content of the embodiment of FIG. 3A to FIG. 3E , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
請參考圖4,在本實施例中,可伸縮式基板30之第二主動元件T2的形狀不同於第一主動元件T1的形狀與第三主動元件T3的形狀。舉例來說,第二主動元件T2的半導體層形狀不同於第一主動元件T1的半導體層的形狀與第三主動元件T3的半導體層的形狀。在本實施例中,第二主動元件T2的半導體層實質上為直條形,第一主動元件T1的半導體層與第三主動元件T3的半導體層實質上為L形。半導體層為L形或彎曲形可以分散所受到的應力,減少半導體層因為應變或應力而導致電性出現不良影響。
Referring to FIG. 4 , in this embodiment, the shape of the second active element T2 of the
在一些實施例中,各裝置部200為長度為L且寬度為W的矩形,在各裝置部200的寬度W的方向上,周邊區PR的寬度W1為16%W至40%W,且在各裝置部200的長度L的方向上,周邊區PR的寬度W2為16%L至40%L。
In some embodiments, each
基於上述,第一主動元件T1的半導體層、第二主動元件T2的半導體層以及第三主動元件T3的半導體層設置於主動區AR而非主動區AR外圍的周邊區PR,藉此能避免可伸縮式基板30在拉伸後故障並導致畫面Mura的問題。
Based on the above, the semiconductor layer of the first active element T1, the semiconductor layer of the second active element T2, and the semiconductor layer of the third active element T3 are disposed in the active region AR instead of the peripheral region PR around the active region AR, thereby avoiding the possibility of The
圖5是依照本發明的一實施例的一種可伸縮式基板的上視示意圖,其中圖5繪示了第一子畫素SP1中之第一主動元件T1的半導體層、第二子畫素SP2中之第二主動元件T2的半導體層以及第三子畫素SP3中之第三主動元件T3的半導體層,並省略繪出了第一子畫素SP1、第二子畫素SP2以及第三子畫素SP3中的其他構件。 5 is a schematic top view of a retractable substrate according to an embodiment of the present invention, wherein FIG. 5 illustrates the semiconductor layer of the first active element T1 and the second sub-pixel SP2 in the first sub-pixel SP1 The semiconductor layer of the second active element T2 and the semiconductor layer of the third active element T3 in the third sub-pixel SP3 are omitted, and the first sub-pixel SP1, the second sub-pixel SP2 and the third sub-pixel are omitted. Other components in Pixel SP3.
在此必須說明的是,圖5的實施例沿用圖3A至圖3E的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 It must be noted here that the embodiment in FIG. 5 uses the element numbers and part of the content of the embodiment in FIGS. 3A to 3E , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
請參考圖5,在本實施例中,可伸縮式基板40之第二主動元件T2的形狀不同於第一主動元件T1的形狀與第三主動元件T3的形狀。舉例來說,第二主動元件T2的半導體層形狀不同於第一主動元件T1的半導體層的形狀與第三主動元件T3的半導體層的形狀。在本實施例中,第一主動元件T1的半導體層與第三主動元件T3的半導體層實質上為直條形,第二主動元件T2的半導體層實質上為S形。
Referring to FIG. 5 , in this embodiment, the shape of the second active element T2 of the
半導體層為S形或彎曲形可以分散所受到的應力,減少半導體層因為應變或應力而導致電性出現不良影響。 The S-shaped or curved shape of the semiconductor layer can disperse the stress and reduce the bad influence on the electrical properties of the semiconductor layer due to strain or stress.
在相同電壓差的情況下,長度較長的半導體層的電流較小。在本實施例中,第二主動元件T2的半導體層的長度較長,且可對應於藍色子畫素設置。第一主動元件T1的半導體層與第三主 動元件T3的半導體層的長度較短,且可分別對應於紅色子畫素與綠色子畫素設置。 In the case of the same voltage difference, the current of the semiconductor layer with a longer length is smaller. In this embodiment, the length of the semiconductor layer of the second active element T2 is relatively long, and can be arranged corresponding to the blue sub-pixels. The semiconductor layer of the first active element T1 and the third main The length of the semiconductor layer of the moving element T3 is short, and can be arranged corresponding to the red sub-pixel and the green sub-pixel respectively.
在一些實施例中,各裝置部200為長度為L且寬度為W的矩形,在各裝置部200的寬度W的方向上,周邊區PR的寬度W1為16%W至40%W,且在各裝置部200的長度L的方向上,周邊區PR的寬度W2為16%L至40%L。
In some embodiments, each
基於上述,第一主動元件T1的半導體層、第二主動元件T2的半導體層以及第三主動元件T3的半導體層設置於主動區AR而非主動區AR外圍的周邊區PR,藉此能避免可伸縮式基板40在拉伸後故障並導致畫面Mura的問題。
Based on the above, the semiconductor layer of the first active element T1, the semiconductor layer of the second active element T2, and the semiconductor layer of the third active element T3 are disposed in the active region AR instead of the peripheral region PR around the active region AR, thereby avoiding the possibility of The
10:可伸縮式基板 100:圖案化基板 200:裝置部 300:線路部 310:訊號線 400:連接部 410:加強結構 AR:主動區 L:長度 PR:周邊區 SP1:第一子畫素 SP2:第二子畫素 SP3:第三子畫素 TH:貫孔 T1:第一主動元件 T2:第二主動元件 T3:第三主動元件 W、W1、W2:寬度 10: Retractable base plate 100: Patterned substrate 200: Device Department 300: Line Department 310: Signal line 400: Connection part 410: Strengthen the structure AR: Active area L: length PR: Surrounding area SP1: First Subpixel SP2: Second Subpixel SP3: Third Subpixel TH: through hole T1: The first active element T2: The second active element T3: The third active element W, W1, W2: width
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Also Published As
Publication number | Publication date |
---|---|
TW202219607A (en) | 2022-05-16 |
TWI745229B (en) | 2021-11-01 |
TWI771051B (en) | 2022-07-11 |
TWI762324B (en) | 2022-04-21 |
TW202219923A (en) | 2022-05-16 |
TW202219599A (en) | 2022-05-16 |
TW202219473A (en) | 2022-05-16 |
TWI783493B (en) | 2022-11-11 |
TW202219919A (en) | 2022-05-16 |
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